Electrically driven photon antibunching from a single molecule at room temperature

Room-Temperature Single-Photon Sources Based on Colloidal Quantum Dots: A Review

Single-photon sources (SPSs) play a crucial role in quantum photonics, and colloidal quantum dots (CQDs) have emerged as promising and cost-effective candidates for such applications due to their high-purity single-photon emission at room temperature. This review focuses on various aspects of CQDs as SPSs. Firstly, a brief overview of the fundamental optical properties of CQDs is provided, including emission wavelength engineering and fluorescence intermittency, and their single-photon emission properties. Subsequently, this review delves into research concerning CQDs as SPSs, covering topics such as the coupling of single CQDs to microcavities, both in weak and strong coupling regimes. Additionally, methods for localizing and positioning CQDs are explored, which are critical for on-chip SPSs devices.

Light-Emitting Electrochemical Cells Based on Nanogap Electrodes

In a light-emitting electrochemical cell (LEC), electrochemical doping caused by mobile ions facilitates bipolar charge injection and recombination emissions for a high electroluminescence (EL) intensity at low driving voltages. We present the development of a nanogap LEC (i.e., nano-LEC) comprising a light-emitting polymer (F8BT) and an ionic liquid deposited on a gold nanogap electrode. The device demonstrated a high EL intensity at a wavelength of 540 nm corresponding to the emission peak of F8BT and a threshold voltage of ∼2 V at 300 K. Upon application of a constant voltage, the device demonstrated a gradual increase in current intensity followed by light emission. Notably, the delayed components of the current and EL were strongly suppressed at low temperatures (<285 K). The results clearly indicate that the device functions as an LEC and that the nano-LEC is a promising approach to realizing molecular-scale current-induced light sources.

Electrically Driven Site-Controlled Single Photon Source

Single photon sources are fundamental building blocks for quantum communication and computing technologies. In this work, we present a device geometry consisting of gold pillars embedded in a van der Waals heterostructure of graphene, hexagonal boron nitride, and tungsten diselenide. The gold pillars serve to both generate strain and inject charge carriers, allowing us to simultaneously demonstrate the positional control and electrical pumping of a single photon emitter. Moreover, increasing the thickness of the hexagonal boron nitride tunnel barriers restricts electroluminescence but enables electrical control of the emission energy of the site-controlled single photon emitters, with measured energy shifts reaching 40 meV.

Trigonal Copper(I) Complexes with Cyclic (Alkyl)(amino)carbene Ligands for Single-Photon Near-IR Triplet Emission

Molecular near-IR (NIR) triplet-state emitters are of importance for the development of new, organic-electronics-based telecommunication technologies as optical fibers operating in the corresponding spectral bands allow for data transfer over much longer distances due to the significantly lower attenuation. However, achieving such low-energy triplet excited states with good radiative rate constants is very challenging, and studies regarding the single-photon emission of organometallics in this energy range are scarce. We have prepared a series of trigonal Cu^I CAAC complexes bearing chelating ligands with O, N, S, and Se donor atoms and studied their photophysical properties in this context. The compounds show weak low-energy absorption in solution between 400 and 500 nm due to mixed Cu → CAAC ¹MLCT/LLCT states, resulting in yellow-green to orange appearance, which we have also correlated to the ¹⁵N NMR resonances of the π-accepting carbene ligand. In the solid state, phosphorescence from dominant ³(Cu → CAAC) CT states is observed at room temperature. The emission of the complexes is bathochromically shifted in comparison to structurally related linearly coordinated copper(I) CAAC complexes due to structural reorganization in the excited state to a T-shape. For [Cu(dbm)(CAAC^Me)], the broad phosphorescence with outstanding λ_max = 760 nm tailors out to ca. 1100 nm and leads to its proof-of-concept application as a nonclassical single-photon light source, constituting key functional units for the implementation of tap-proof data transfer.

Room-Temperature, Highly Pure Single-Photon Sources from All-Inorganic Lead Halide Perovskite Quantum Dots

Attaining pure single-photon emission is key for many quantum technologies, from optical quantum computing to quantum key distribution and quantum imaging. The past 20 years have seen the development of several solid-state quantum emitters, but most of them require highly sophisticated techniques (e.g., ultrahigh vacuum growth methods and cryostats for low-temperature operation). The system complexity may be significantly reduced by employing quantum emitters capable of working at room temperature. Here, we present a systematic study across ∼170 photostable single CsPbX3 (X: Br and I) colloidal quantum dots (QDs) of different sizes and compositions, unveiling that increasing quantum confinement is an effective strategy for maximizing single-photon purity due to the suppressed biexciton quantum yield. Leveraging the latter, we achieve 98% single-photon purity (g(2)(0) as low as 2%) from a cavity-free, nonresonantly excited single 6.6 nm CsPbI3 QDs, showcasing the great potential of CsPbX3 QDs as room-temperature highly pure single-photon sources for quantum technologies.

Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage

As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.

Effective Control of Photon Statistics from Electroluminescence by Fano-like Interference Effect

The photon blockade induced by optical nonlinearity has been widely used to generate single-photon emission under optical driving in quantum optics. However, the same approach is difficult to achieve in electrically driven molecular junctions. Here we propose a scheme for tuning photon statistics via Fano-like interference effect in a system consisting of two molecules within one optical cavity. Under electrical pumping, a transition from photon bunching to antibunching takes place as a manifestation of the Fano-like interference. This effect persists even in the presence of the dipole-dipole interaction between molecules based on the parameters extracted from the experiments. Our proposal can be realized in current-carrying scanning tunneling microscope junctions.

Single-photon emission from isolated monolayer islands of InGaN

We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of ~400 nm.

Cyclic (Amino)(aryl)carbenes Enter the Field of Chromophore Ligands: Expanded π System Leads to Unusually Deep Red Emitting CuI Compounds

A series of copper(I) complexes bearing a cyclic (amino)(aryl)carbene (CAArC) ligand with various complex geometries have been investigated in great detail with regard to their structural, electronic, and photophysical properties. Comparison of [CuX(CAArC)] (X = Br (1), Cbz (2), acac (3), Ph₂acac (4), Cp (5), and Cp* (6)) with known Cu^I complexes bearing cyclic (amino)(alkyl), monoamido, or diamido carbenes (CAAC, MAC, or DAC, respectively) as chromophore ligands reveals that the expanded π-system of the CAArC leads to relatively low energy absorption maxima between 350 and 550 nm in THF with high absorption coefficients of 5-15 × 10³ M^-1 cm^-1 for 1-6. Furthermore, 1-5 show intense deep red to near-IR emission involving their triplet excited states in the solid state and in PMMA films with λ^em_max = 621-784 nm. Linear [Cu(Cbz)(^DippCAArC)] (2) has been found to be an exceptional deep red (λ_max = 621 nm, ϕ = 0.32, τ_av = 366 ns) thermally activated delayed fluorescence (TADF) emitter with a radiative rate constant k_r of ca. 9 × 10⁵ s^-1, exceeding those of commercially employed Ir^III- or Pt^II-based emitters. Time-resolved transient absorption and fluorescence upconversion experiments complemented by quantum chemical calculations employing Kohn-Sham density functional theory and multireference configuration interaction methods as well as temperature-dependent steady-state and time-resolved luminescence studies provide a detailed picture of the excited-state dynamics of 2. To demonstrate the potential applicability of this new class of low-energy emitters in future photonic applications, such as nonclassical light sources for quantum communication or quantum cryptography, we have successfully conducted single-molecule photon-correlation experiments of 2, showing distinct antibunching as required for single-photon emitters.

Quantum Nature of Light in Nonstoichiometric Bulk Perovskites

Sources of single photons are a fundamental brick in the development of quantum information technologies. Great efforts have been made so far in the realization of reliable, highly efficient, and on demand quantum sources that could show an easy integration with quantum devices. This has recently culminated in the use of solid state quantum dots as promising candidates for future sources of quantum technologies. However, some challenges, like their complex fabrication, random distribution, and difficult integrability with silicon technology, could hinder their broad application, making necessary the study of alternative systems. In this work, we clearly demonstrate single photon emission from quantum dots formed in nonstoichiometric bulk perovskites. Their simple growing procedures, exceptional stability under constant illumination, easy control of their optical properties, as well as ease of integrability make these materials very interesting candidates for the development of quantum light sources in the near-infrared.

High-contrast switching and high-efficiency extracting for spontaneous emission based on tunable gap surface plasmon

Controlling spontaneous emission at optical scale lies in the heart of ultracompact quantum photonic devices, such as on-chip single photon sources, nanolasers and nanophotonic detectors. However, achiving a large modulation of fluorescence intensity and guiding the emitted photons into low-loss nanophotonic structures remain rather challenging issue. Here, using the liquid crystal-tuned gap surface plasmon, we theoretically demonstrate both a high-contrast switching of the spontaneous emission and high-efficiency extraction of the photons with a specially-designed tunable surface plasmon nanostructures. Through varying the refractive index of liquid crystal, the local electromagnetic field of the gap surface plasmon can be greatly modulated, thereby leading to the swithching of the spontaneous emission of the emitter placed at the nanoscale gap. By optimizing the material and geometrical parameters, the total decay rate can be changed from 103γ0 to 8750γ0, [γ0 is the spontaneous emission rate in vacuum] with the contrast ratio of 85. Further more, in the design also enables propagation of the emitted photons along the low-loss phase-matched nanofibers with a collection efficiency of more than 40%. The proposal provides a novel mechanism for simultaneously switching and extracting the spontaneous emitted photons in hybrid photonic nanostructures, propelling the implementation in on-chip tunable quantum devices.

Genesis, challenges and opportunities for colloidal lead halide perovskite nanocrystals

Lead halide perovskites (LHPs) in the form of nanometre-sized colloidal crystals, or nanocrystals (NCs), have attracted the attention of diverse materials scientists due to their unique optical versatility, high photoluminescence quantum yields and facile synthesis. LHP NCs have a 'soft' and predominantly ionic lattice, and their optical and electronic properties are highly tolerant to structural defects and surface states. Therefore, they cannot be approached with the same experimental mindset and theoretical framework as conventional semiconductor NCs. In this Review, we discuss LHP NCs historical and current research pursuits, challenges in applications, and the related present and future mitigation strategies explored.

Bimodal exciton-plasmon light sources controlled by local charge carrier injection

Electrical charges can generate photon emission in nanoscale quantum systems by two independent mechanisms. First, radiative recombination of pairs of oppositely charged carriers generates sharp excitonic lines. Second, coupling between currents and collective charge oscillations results in broad plasmonic bands. Both luminescence modes can be simultaneously generated upon charge carrier injection into thin C₆₀ crystallites placed in the plasmonic nanocavity of a scanning tunneling microscope (STM). Using the sharp tip of the STM as a subnanometer-precise local electrode, we show that the two types of electroluminescence are induced by two separate charge transport channels. Holes injected into the valence band promote exciton generation, whereas electrons extracted from the conduction band cause plasmonic luminescence. The different dynamics of the two mechanisms permit controlling their relative contribution in the combined bimodal emission. Exciton recombination prevails for low charge injection rates, whereas plasmon decay outshines for high tunneling currents. The continuous transition between both regimes is described by a rate model characterizing emission dynamics on the nanoscale. Our work provides the basis for developing blended exciton-plasmon light sources with advanced functionalities.

Signatures of Plexitonic States in Molecular Electroluminescence

We develop a quantum master equation (QME) approach to investigate the electroluminesence (EL) of molecules confined between metallic electrodes and coupled to quantum plasmonic modes. Within our general state-based framework, we describe electronic tunneling, vibrational damping, environmental dephasing, and the quantum coherent dynamics of coupled quantum electromagnetic field modes. As an example, we calculate the STM-induced spontaneous emission of a tetraphenylporphyrin (TPP) molecule coupled to a nanocavity plasmon. In the weak molecular exciton-plasmon coupling regime we find excellent agreement with experiments, including above-threshold hot luminescence, an effect not described by previous semiclassical calculations. In the strong coupling regime, we analyze the spectral features indicative of the formation of plexcitonic states.

Electrically-driven single-photon sources based on colloidal quantum dots with near-optimal antibunching at room temperature

Photonic quantum information requires high-purity, easily accessible, and scalable single-photon sources. Here, we report an electrically driven single-photon source based on colloidal quantum dots. Our solution-processed devices consist of isolated CdSe/CdS core/shell quantum dots sparsely buried in an insulating layer that is sandwiched between electron-transport and hole-transport layers. The devices generate single photons with near-optimal antibunching at room temperature, i.e., with a second-order temporal correlation function at zero delay (g⁽²⁾(0)) being <0.05 for the best devices without any spectral filtering or background correction. The optimal g⁽²⁾(0) from single-dot electroluminescence breaks the lower g⁽²⁾(0) limit of the corresponding single-dot photoluminescence. Such highly suppressed multi-photon-emission probability is attributed to both novel device design and carrier injection/recombination dynamics. The device structure prevents background electroluminescence while offering efficient single-dot electroluminescence. A quantitative model is developed to illustrate the carrier injection/recombination dynamics of single-dot electroluminescence.

Single-photon sources are one of the most basic devices for quantum optical experiments and applications. Here, Lin et al. present an electrically driven single-photon source based on solution-processed colloidal quantum dots with near-optimal antibunching at room temperature.

Electrically driven single-photon emission from an isolated single molecule

Electrically driven molecular light emitters are considered to be one of the promising candidates as single-photon sources. However, it is yet to be demonstrated that electrically driven single-photon emission can indeed be generated from an isolated single molecule notwithstanding fluorescence quenching and technical challenges. Here, we report such electrically driven single-photon emission from a well-defined single molecule located inside a precisely controlled nanocavity in a scanning tunneling microscope. The effective quenching suppression and nanocavity plasmonic enhancement allow us to achieve intense and stable single-molecule electroluminescence. Second-order photon correlation measurements reveal an evident photon antibunching dip with the single-photon purity down to g⁽²⁾(0) = 0.09, unambiguously confirming the single-photon emission nature of the single-molecule electroluminescence. Furthermore, we demonstrate an ultrahigh-density array of identical single-photon emitters.

Molecular emitters offer a promising solution for single-photon generation. Here, by exploiting electronic decoupling by an ultrathin dielectric spacer and emission enhancement by a resonant plasmonic nanocavity, the authors demonstrate electrically driven single-photon emission from a single molecule.

A review on single photon sources in silicon carbide

This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

Estimation of nonclassical independent Gaussian processes by classical interferometry

We propose classical interferometry with low-intensity thermal radiation for the estimation of nonclassical independent Gaussian processes in material samples. We generally determine the mean square error of the phase-independent parameters of an unknown Gaussian process, considering a noisy source of radiation the phase of which is not locked to the pump of the process. We verify the sufficiency of passive optical elements in the interferometer, active optical elements do not improve the quality of the estimation. We also prove the robustness of the method against the noise and loss in both interferometric channels and the sample. The proposed method is suitable even for the case when a source of radiation sufficient for homodyne detection is not available.

Molecular Water Lilies: Orienting Single Molecules in a Polymer Film by Solvent Vapor Annealing

The microscopic orientation and position of photoactive molecules is crucial to the operation of optoelectronic devices such as OLEDs and solar cells. Here, we introduce a shape-persistent macrocyclic molecule as an excellent fluorescent probe to simply measure (i) its orientation by rotating the excitation polarization and recording the strength of modulation in photoluminescence (PL) and (ii) its position in a film by analyzing the overall PL brightness at the molecular level. The unique shape, the absorption and the fluorescence properties of this probe yield information on molecular orientation and position. We control orientation and positioning of the probe in a polymer film by solvent vapor annealing (SVA). During the SVA process the molecules accumulate at the polymer/air interface, where they adopt a flat orientation, much like water lilies on the surface of a pond. The results are potentially significant for OLED fabrication and single-molecule spectroscopy (SMS) in general.

Atomically thin quantum light-emitting diodes

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

Exciton dynamics of C60-based single-photon emitters explored by Hanbury Brown-Twiss scanning tunnelling microscopy

Exciton creation and annihilation by charges are crucial processes for technologies relying on charge-exciton-photon conversion. Improvement of organic light sources or dye-sensitized solar cells requires methods to address exciton dynamics at the molecular scale. Near-field techniques have been instrumental for this purpose; however, characterizing exciton recombination with molecular resolution remained a challenge. Here, we study exciton dynamics by using scanning tunnelling microscopy to inject current with sub-molecular precision and Hanbury Brown–Twiss interferometry to measure photon correlations in the far-field electroluminescence. Controlled injection allows us to generate excitons in solid C₆₀ and let them interact with charges during their lifetime. We demonstrate electrically driven single-photon emission from localized structural defects and determine exciton lifetimes in the picosecond range. Monitoring lifetime shortening and luminescence saturation for increasing carrier injection rates provides access to charge-exciton annihilation dynamics. Our approach introduces a unique way to study single quasi-particle dynamics on the ultimate molecular scale.

Electrons and holes trapped in a molecular crystal couple to form excitons. Here, the authors use scanning tunnelling microscopy to inject current with submolecular precision into structural defects in solid C₆₀ and demonstrate single photon emission from the excitons trapped there.

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

Spontaneous Fluctuations of Transition Dipole Moment Orientation in OLED Triplet Emitters

The efficiency of an organic light-emitting diode (OLED) depends on the microscopic orientation of transition dipole moments of the molecular emitters. The most effective materials used for light generation have 3-fold symmetry, which prohibits a priori determination of dipole orientation due to the degeneracy of the fundamental transition. Single-molecule spectroscopy reveals that the model triplet emitter tris(1-phenylisoquinoline)iridium(III) (Ir(piq)3) does not behave as a linear dipole, radiating with lower polarization anisotropy than expected. Spontaneous symmetry breaking occurs in the excited state, leading to a random selection of one of the three ligands to form a charge-transfer state with the metal. This nondeterministic localization is revealed in switching of the degree of linear polarization of phosphorescence. Polarization scrambling likely raises out-coupling efficiency and should be taken into account when deriving molecular orientation of the guest emitter within the OLED host from ensemble angular emission profiles.

Electroluminescence from localized defects in zinc oxide: toward electrically driven single photon sources at room temperature

Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography, and quantum communications. However, the majority of room temperature emitters to date are only excited optically, which limits their proper integration into scalable devices. In this work, we overcome this limitation and present room temperature electrically driven light emission from localized defects in zinc oxide (ZnO) nanoparticles and thin films. The devices emit in the red spectral range and show excellent rectifying behavior. The emission is stable over an extensive period of time, providing an important prerequisite for practical devices. Our results open possibilities for building new ZnO-based quantum integrated devices that incorporate solid-state single photon sources for quantum information technologies.

All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current

The ability to control and exploit quantum coherence and entanglement drives research across many fields ranging from ultra-cold quantum gases to spin systems in condensed matter. Transcending different physical systems, optical approaches have proven themselves to be particularly powerful, since they profit from the established toolbox of quantum optical techniques, are state-selective, contact-less and can be extremely fast. Here, we demonstrate how a precisely timed sequence of monochromatic ultrafast (~ 2–5 ps) optical pulses, with a well defined polarisation can be used to prepare arbitrary superpositions of exciton spin states in a semiconductor quantum dot, achieve ultrafast control of the spin-wavefunction without an applied magnetic field and make high fidelity read-out the quantum state in an arbitrary basis simply by detecting a strong (~ 2–10 pA) electric current flowing in an external circuit. The results obtained show that the combined quantum state preparation, control and read-out can be performed with a near-unity (≥97%) fidelity.

Silicon carbide light-emitting diode as a prospective room temperature source for single photons

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.

Recovery of nanomolecular electronic states from tunneling spectroscopy: LDOS of low-dimensional phthalocyanine molecular structures on Cu(111)

Organic nanomolecules have become one of the most attractive materials for new nanoelectronics devices. Understanding of the electronic density of states around the Fermi energy of low-dimensional molecules is crucial in designing the electronic properties of molecular devices. The low dimensionality of nanomolecules results in new electronic properties owing to their unique symmetry. Scanning tunneling spectroscopy is one of the most effective techniques for studying the electronic states of nanomolecules, particularly near the Fermi energy (±1.5 eV), whereas these molecular electronic states are frequently buried by the tunneling probability background in tunneling spectroscopy, resulting in incorrect determination of the molecular electronic states. Here, we demonstrate how to recover nanomolecular electronic states from dI/dV curves obtained by tunneling spectroscopy. Precise local density of states (LDOS) peaks for low-dimensional nanostructures (monolayer ultrathin films, one-dimensional chains, and single molecules) of phthalocyanine (H2Pc) molecules grown on noble fcc-Cu(111) were obtained.

Optoelectronic processes in squaraine dye-doped OLEDs for emission in the near-infrared

A novel all-organic host-guest system for emission in the NIR is introduced and investigated with respect to its opto-electronic processes. The good agreement between theoretical and experimental results highlights the model character of this system and its potential for electroluminescent application. Comparative measurements provide access to the recombination mechanisms on molecular length scale and show that the emission behavior of the device under operation is controlled by charge carrier dynamics.