Broadband high photoresponse from pure monolayer graphene photodetector

Van Hove Singularity-Enhanced Raman Scattering and Photocurrent Generation in Twisted Monolayer-Bilayer Graphene

Twisted monolayer-bilayer graphene (TMBG) has recently emerged as an exciting platform for exploring correlated physics and topological states with rich tunability. Strong light-matter interaction was realized in twisted bilayer graphene, boosting the development of broadband graphene photodetectors from the visible to infrared spectrum with high responsivity. Extending this approach to the case of TMBG will help design advanced quantum nano-optoelectronic devices because of the reduced symmetry of the system. Here, we observe the formation of van Hove singularities (VHSs) in TMBG by monitoring the significant enhancement of the Raman intensity of the G peak and the intensity ratio of G and 2D peaks. The strong interlayer coupling also leads to the appearance of twist-angle-dependent Raman R and R' peaks in TMBG. Furthermore, the constructed graphene photodetectors from 13.5°-TMBG show significantly enhanced photoresponsivity (∼31 folds of monolayer graphene and ∼15 folds of trilayer graphene) when the energy of incident photons matches the interval energy between the two VHSs in the conduction and valence bands. Our findings establish TMBG as a tunable platform for investigating the light-matter interaction and designing high-performance graphene photodetectors with combined high responsivity and high selectivity.

Controlling photothermoelectric directional photocurrents in graphene with over 400 GHz bandwidth

Photodetection in the near- and mid-infrared spectrum requires a suitable absorbing material able to meet the respective targets while ideally being cost-effective. Graphene, with its extraordinary optoelectronic properties, could provide a material basis simultaneously serving both regimes. The zero-band gap offers almost wavelength independent absorption which lead to photodetectors operating in the infrared spectrum. However, to keep noise low, a detection mechanism with fast and zero bias operation would be needed. Here, we show a self-powered graphene photodetector with a > 400 GHz frequency response. The device combines a metamaterial perfect absorber architecture with graphene, where asymmetric resonators induce photothermoelectric directional photocurrents within the graphene channel. A quasi-instantaneous response linked to the photothermoelectric effect is found. Typical drift/diffusion times optimization are not needed for a high-speed response. Our results demonstrate that these photothermoelectric directional photocurrents have the potential to outperform the bandwidth of many other graphene photodetectors and most conventional technologies.

Multimodal Artificial Synapses for Neuromorphic Application

The rapid development of neuromorphic computing has led to widespread investigation of artificial synapses. These synapses can perform parallel in-memory computing functions while transmitting signals, enabling low-energy and fast artificial intelligence. Robots are the most ideal endpoint for the application of artificial intelligence. In the human nervous system, there are different types of synapses for sensory input, allowing for signal preprocessing at the receiving end. Therefore, the development of anthropomorphic intelligent robots requires not only an artificial intelligence system as the brain but also the combination of multimodal artificial synapses for multisensory sensing, including visual, tactile, olfactory, auditory, and taste. This article reviews the working mechanisms of artificial synapses with different stimulation and response modalities, and presents their use in various neuromorphic tasks. We aim to provide researchers in this frontier field with a comprehensive understanding of multimodal artificial synapses.

Type-printable photodetector arrays for multichannel meta-infrared imaging

Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers considerable advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to far-infrared spectrum. Currently typical multichannel infrared imaging systems consist of separating optical gratings or merging multi-cameras, which require complex circuit design and heavy power consumption, hindering the implementation of advanced human-eye-like imagers. Here, we present printable graphene plasmonic photodetector arrays driven by a ferroelectric superdomain for multichannel meta-infrared imaging with enhanced edge discrimination. The fabricated photodetectors exhibited multiple spectral responses with zero-bias operation by directly rescaling the ferroelectric superdomain instead of reconstructing the separated gratings. We also demonstrated enhanced and faster shape classification (98.1%) and edge detection (98.2%) using our multichannel infrared images compared with single-channel detectors. Our proof-of-concept photodetector arrays simplify multichannel infrared imaging systems and offer potential solutions in efficient edge detection in human-brain-type machine vision.

Broadband Photodetection of Centimeter-Scale T-Phase Gallium Telluride Grown by Molecular Beam Epitaxy

Two-dimensional (2D) semiconductors have recently attracted considerable attention due to their promising applications in future integrated electronic and optoelectronic devices. Large-scale synthesis of high-quality 2D semiconductors is an increasingly essential requirement for practical applications, such as sensing, imaging, and communications. In this work, homogeneous 2D GaTe films on a centimeter scale are epitaxially grown on fluorphlogopite mica substrates by molecular beam epitaxy (MBE). The epitaxial GaTe thin films showed an atomically 2D layered lattice structure with a T phase, which has not been discovered in the GaTe geometric isomer. Furthermore, semiconducting behavior and high mobility above room temperature were found in T-GaTe epitaxial films, which are essential for application in semiconducting devices. The T-GaTe-based photodetectors demonstrated respectable photodetection performance with a responsivity of 13 mA/W and a fast response speed. By introducing monolayer graphene as the substrate, we successfully realized high-quality GaTe/graphene heterostructures. The performance has been significantly improved, such as the responsivity was enhanced more than 20 times. These results highlight a feasible scheme for exploring the crystal phase of 2D GaTe and realizing the controlled growth of GaTe films on large substrates, which could promote the development of broadband, high-performance, and large-scale photodetection applications.

Efficient Carrier Transport in 2D Bi2O2Se/CsBi3I10 Perovskite Heterojunction Enables Highly-Sensitive Broadband Photodetection

2D Bi2O2Se has recently garnered significant attention in the electronics and optoelectronics fields due to its remarkable photosensitivity, broad spectral absorption, and excellent long-term environmental stability. However, the development of integrated Bi2O2Se photodetector with high performance and low-power consumption is limited by material synthesis method and the inherent high carrier concentration of Bi2O2Se. Here, a type-I heterojunction is presented, comprising 2D Bi2O2Se and lead-free bismuth perovskite CsBi3I10, for fast response and broadband detection. Through effective charge transfer and strong coupling effect at the interfaces of Bi2O2Se and CsBi3I10, the response time is accelerated to 4.1 µs, and the detection range is expanded from ultraviolet to near-infrared spectral regions (365-1500 nm). The as-fabricated photodetector exhibits a responsivity of 48.63 AW-1 and a detectivity of 1.22×1012 Jones at 808 nm. Moreover, efficient modulation of the dominant photocurrent generation mechanism from photoconductive to photogating effect leads to sensitive response exceeding 103 AW-1 for heterojunction-based photo field effect transistor (photo-FETs). Utilizing the large-scale growth of both Bi2O2Se and CsBi3I10, the as-fabricated integrated photodetector array demonstrates outstanding homogeneity and stability of photo-response performance. The proposed 2D Bi2O2Se/CsBi3I10 perovskite heterojunction holds promising prospects for the future-generation photodetector arrays and integrated optoelectronic systems.

Multidimensional detection enabled by twisted black arsenic-phosphorus homojunctions

A light field carrying multidimensional optical information, including but not limited to polarization, intensity and wavelength, is essential for numerous applications such as environmental monitoring, thermal imaging, medical diagnosis and free-space communications. Simultaneous acquisition of this multidimensional information could provide comprehensive insights for understanding complex environments but remains a challenge. Here we demonstrate a multidimensional optical information detection device based on zero-bias double twisted black arsenic-phosphorus homojunctions, where the photoresponse is dominated by the photothermoelectric effect. By using a bipolar and phase-offset polarization photoresponse, the device operated in the mid-infrared range can simultaneously detect both the polarization angle and incident intensity information through direct measurement of the photocurrents in the double twisted black arsenic-phosphorus homojunctions. The device's responsivity makes it possible to retrieve wavelength information, typically perceived as difficult to obtain. Moreover, the device exhibits an electrically tunable polarization photoresponse, enabling precise distinction of polarization angles under low-intensity light exposure. These demonstrations offer a promising approach for simultaneous detection of multidimensional optical information, indicating potential for diverse photonic applications.

Synergistic-potential engineering enables high-efficiency graphene photodetectors for near- to mid-infrared light

High quantum efficiency and wide-band detection capability are the major thrusts of infrared sensing technology. However, bulk materials with high efficiency have consistently encountered challenges in integration and operational complexity. Meanwhile, two-dimensional (2D) semimetal materials with unique zero-bandgap structures are constrained by the bottleneck of intrinsic quantum efficiency. Here, we report a near-mid infrared ultra-miniaturized graphene photodetector with configurable 2D potential well. The 2D potential well constructed by dielectric structures can spatially (laterally and vertically) produce a strong trapping force on the photogenerated carriers in graphene and inhibit their recombination, thereby improving the external quantum efficiency (EQE) and photogain of the device with wavelength-immunity, which enable a high responsivity of 0.2 A/W-38 A/W across a broad infrared detection band from 1.55 to 11 µm. Thereafter, a room-temperature detectivity approaching 1 × 109 cm Hz1/2 W-1 is obtained under blackbody radiation. Furthermore, a synergistic effect of electric and light field in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. Our strategy opens up alternative possibilities for easy fabrication, high-performance and multifunctional infrared photodetectors.

Ultrabroadband High Photoresponsivity at Room Temperature Based on Quasi-1D Pseudogap System (TaSe4 )2 I

Narrow bandgap materials have garnered significant attention within the field of broadband photodetection. However, the performance is impeded by diminished absorption near the bandgap, resulting in a rapid decline in photoresponsivity within the mid-wave infrared (MWIR) and long-wave infrared (LWIR) regions. Furthermore, they mostly worked in cryogenic temperature. Here, without the assistance of any complex structure and special environment, it is realized high responsivity covering ultra-broadband wavelength range (Ultraviolet (UV) to LWIR) in a single quasi-1D pseudogap (PG) system (TaSe4 )2 I nanoribbon, especially high responsivity (From 23.9 to 8.31 A W-1 ) within MWIR and LWIR region at room temperature (RT). Through direct probing the carrier relaxation process with broadband time-resolved transient absorption spectrum measurement, the underlying mechanism of majorly photoconductive effect is revealed, which causes an increased spectral weight extended to PG region. This work paves the way for realizing high-performance uncooled MWIR and LWIR detection by using quasi-1D PG materials.

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties. Highly effective PDs can be obtained by making use of the exceptional properties of 2D materials, such as their high transparency, large charge carrier mobility, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is thoroughly discussed in this article, with special attention paid to the key characteristics that set them apart from PDs based on other integrated materials. This review examines how single TMDs, TMD-TMD heterostructures, TMD-graphene (Gr) hybrids, TMD-MXene composites, TMD-perovskite heterostructures, and TMD-quantum dot (QD) configurations show advanced photodetection. Additionally, a thorough analysis of the recent developments in 2D TMD-based PDs, highlighting their exceptional performance capabilities, including ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity, attained through cutting-edge methods is provided. The article conclusion highlights the potential for ground-breaking discoveries in this fast developing field of research by outlining the challenges faced in the field of PDs today and providing an outlook on the prospects of 2D TMD-based PDs in the future.

Recent Advances in Low-Dimensional Nanomaterials for Photodetectors

New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.

Dual-coupling effect enables a high-performance self-powered UV photodetector

Self-powered ultraviolet photodetectors generally operate by utilizing the built-in electric field within heterojunctions or Schottky junctions. However, the effectiveness of self-powered detection is severely limited by the weak built-in electric field. Hence, advances in modulating the built-in electric field within heterojunctions are crucial for performance breakthroughs. Here, we suggest a method to enhance the built-in electric field by taking advantage of the dual-coupling effect between heterojunction and the self-polarization field of ferroelectrics. Under zero bias, the fabricated AgNWs/TiO2/PZT/GaN device achieves a responsivity of 184.31 mA/W and a specific detectivity of 1.7 × 1013 Jones, with an on/off ratio of 8.2 × 106 and rise/decay times reaching 0.16 ms/0.98 ms, respectively. The outstanding properties are primarily attributed to the substantial self-polarization of PZT induced by the p-GaN and the subsequent enhancement of the built-in electric field of the TiO2/PZT heterojunction. Under UV illumination, the dual coupling of the enhanced heterojunction and the self-polarizing field synergistically boost the photo-generated carrier separation and transport, leading to breakthroughs in ferroelectric-based self-powered photodetectors.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

High-Performance Photodetectors Based on Semiconducting Graphene Nanoribbons

The inherent zero-band gap nature of graphene and its fast photocarrier recombination rate result in poor optical gain and responsivity when graphene is used as the light absorption medium in photodetectors. Here, semiconducting graphene nanoribbons with a direct bandgap of 1.8 eV are synthesized and employed to construct a vertical heterojunction photodetector. At a bias voltage of -5 V, the photodetector exhibits a responsivity of 1052 A/W, outperforming previous graphene-based heterojunction photodetectors by several orders of magnitude. The achieved detectivity of 3.13 × 1013 Jones and response time of 310 μs are also among the best values for graphene-based heterojunction photodetectors reported until date. Furthermore, even under zero bias, the photodetector demonstrates a high responsivity and detectivity of 1.04 A/W and 2.45 × 1012 Jones, respectively. The work shows a great potential of graphene nanoribbon-based photodetection technology.

Prediction and simulation of a potential barrier block in Van der Waals heterojunction photodetectors

The pBp structure can effectively suppress the dark current of a photodetector by blocking the majority of carriers. However, it is a big challenge to carry out large-scale simulation optimization for two-dimensional (2D) pBp heterojunction photodetectors due to a lack of the device models. Here, a numerical simulation model of the 2D pBp heterojunction was established based on the finite element method to solve this problem. Using this model, the spatial distribution of the energy band is clarified for each layer. The concentration of nonuniformly distributed electrons, induced by the incident light and bias voltage, is obtained by solving the diffusion and drift equations. The characteristics of the photocurrent and the dark current could be presented and the quantum efficiency could be calculated by counting the ratio of the number of carriers collected at the terminals and the carriers photogenerated. The material parameters could be modified for the optimization of the simulation and prediction. In using our model, a B P/M o S 2/graphene photodetector was constructed, and the simulation results show that it works effectively under a reverse bias ranging from -0.3 to 0 V. The external quantum efficiency is 18%, while the internal efficiency approaches 85%. The doping in the barrier region definitely does not affect the dark current and the photocurrent. These results are similar to experimental results published earlier. In addition, with the BP bandgap width of 0.8 eV and incident wavelength of 1.7 µm, the dark current density predicted by the model could reach 3.3×10-8 A/c m 2, which is two orders lower than the reported 2D photodetectors at room temperature. This proposed model provides a way to design 2D pBp heterojunction photodetectors.

Ultrafast and Broad-Band Graphene Heterojunction Photodetectors with High Gain

Graphene possesses an exotic band structure that spans a wide range of important technological wavelength regimes for photodetection, all within a single material. Conventional methods aimed at enhancing detection efficiency often suffer from an extended response time when the light is switched off. The task of achieving ultrafast broad-band photodetection with a high gain remains challenging. Here, we propose a devised architecture that combines graphene with a photosensitizer composed of an alternating strip superstructure of WS2-WSe2. Upon illumination, n+-WS2 and p+-WSe2 strips create alternating electron- and hole-conduction channels in graphene, effectively overcoming the tradeoff between the responsivity and switch time. This configuration allows for achieving a responsivity of 1.7 × 107 mA/W, with an extrinsic response time of 3-4 μs. The inclusion of the superstructure booster enables photodetection across a wide range from the near-ultraviolet to mid-infrared regime and offers a distinctive photogating route for high responsivity and fast temporal response in the pursuit of broad-band detection.

Plasma Treatment for Achieving Oxygen Substitution in Layered MoS2 and the Room-Temperature Mid-Infrared (10 μm) Photoresponse

Highly sensitive photodetectors in the mid-infrared (MIR, 3-15 μm) are highly desired in a growing number of applications. However, only a handful of narrow-band-gap semiconductors are suitable for this purpose, most of which require cryogenic cooling to increase the signal-to-noise ratio. The realization of high-performance MIR photodetectors operating at room temperature remains a challenge. Herein, we report on plasma-treated few-layer MoS2 for room-temperature MIR (10 μm) photodetection. Oxygen plasma treatment, which is a mature microfabrication process, is employed. The ion kinetic energy of oxygen plasma is adjusted to 70-130 eV. A photoresponsivity of 0.042 mA/W and a detectivity of 1.57 × 107 Jones are obtained under MIR light (10 μm) illumination with an average power density of 114.6 mW/cm2. The photoresponse is attributed to the introduction of electronic states in the band gap of MoS2 through oxygen substitution. A graphene/plasma-treated MoS2/graphene device is further demonstrated to shorten the active channel while maintaining the illumination area. The photoresponsivity and detectivity are largely boosted to 1.8 A/W and 2.64 × 109 Jones, respectively. The excellent detective performance of the graphene/plasma-treated MoS2/graphene device is further demonstrated in single-detector MIR (10 μm) scanning imaging. This work offers a facile approach to constructing integrated MoS2-based MIR photodetectors.

Tunable ultra-wideband graphene-based filter with a staggered structure

We present a tunable ultra-wideband band-stop filter utilizing graphene with a straightforward staggered structure. The transmission spectrum has been meticulously analyzed using the effective-index-based transfer matrix method (EIB-TMM). The results demonstrate that the filtering properties can be precisely tailored by manipulating the Fermi energy level of graphene. Importantly, we have successfully achieved a remarkable ultra-wideband stopband by optimizing the staggered parameters. Our exploration of redefining the staggered structure through adjustments to three critical parameters has revealed a crucial role in expanding bandwidth. This investigation deepens our understanding of how nonperiodic structures can effectively broaden bandwidth and holds great promise for the prospective design of ultra-wideband band-stop devices.

Janus-Type Mixed-Valent Copper-Cyanido Honeycomb Layers

The synthesis of Janus-type layers, which possess front and back sides that consist of different structures, remains a major challenge in the field of two-dimensional materials. In this study, two Janus-type layered coordination polymers, namely, CuII(NEtH2)(NMe2H·H2O)CuI(CN)3 (1) and CuII(NMe2H)(NMe2H·H2O)CuI(CN)3 (2), were synthesized via a simple one-pot procedure using copper(II) nitrate and sodium cyanido in mixed solutions of dimethylamine and ethylamine. Uniquely, 1 and 2 were composed of cyanido-bridged neutral layers and exhibited a CuICuII mixed-valent state. Meanwhile, using a solution of pure dimethylamine for the synthesis yielded the monovalent three-dimensional framework (NMe2H2)[CuI2(CN)3] (3). Results indicated that the simultaneous use of two mixed amines gave rise to the controlled reduction of CuII ions during the reaction. In addition, each face of the layers was coordinated by different amines on the axial positions of the CuII sites, resulting in anisotropic Janus layers. Furthermore, the thermal expansion behavior of 2 was investigated, demonstrating that the neutral [CuICuII(CN)3] layer was relatively rigid compared with the analogous anionic [CuI2(CN)3]- layer.

Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation

The gallium monochalcogenides family, comprising gallium sulfide (GaS), gallium selenide (GaSe), and gallium telluride (GaTe), is capturing attention for its applications in energy storage and production, catalysis, photonics, and optoelectronics. This interest originates from their properties, which include an optical bandgap larger than those of most common transition metal dichalcogenides, efficient light absorption, and significant carrier mobility. For any application, stability to air exposure is a fundamental requirement. Here, we perform a comparative study of the stability of layered GaS, GaSe, and GaTe nanometer-thick films down to a few layers with the goal of identifying the most suitable Ga chalcogenide for future integration in photonic and optoelectronic devices. Our study unveils a trend of decreasing air stability from sulfide to selenide and finally to telluride. Furthermore, we demonstrate a hydrogen passivation process to prevent the oxidation of GaSe with a higher feasibility and durability than other state-of-the-art passivation methods proposed in the literature.

Perfect Absorption and Reflection Modulation Based on Asymmetric Slot-Assisted Gratings without Mirrors

As a perfect graphene absorber without any external mirrors, we proposed asymmetric slot-assisted grating structures supporting two degenerate resonant modes of the guided-mode resonances (GMR) and the quasi-bound states in the continuum (quasi-BIC). The GMR mode functions as an internal mirror in conjunction with the background scattering, while the quasi-BIC, which is responsible for perfect graphene absorption, stems from the horizontal symmetry breaking by an asymmetric slot. By properly shifting the slot center from the grating center, the leakage rate of quasi-BIC can be controlled in such a way as to satisfy the critical coupling condition. We provide a comprehensive study on the coupling mechanism of two degenerate resonant modes for a one-port system mimicking the resonance. We also numerically demonstrated that our proposed grating structures show an excellent reflection-type modulation performance at optical wavelength ranges when doped double-layer graphene is applied. Due to the perfect absorption at the OFF state, a high modulation depth of ~50 dB can be achieved via a small Fermi level variation of ~0.05 eV. To obtain the lower insertion loss at the ON state, the higher Fermi level is required to decrease the graphene absorption coefficient.

Toroidal Dipole BIC-Driven Highly Robust Perfect Absorption with a Graphene-Loaded Metasurface

Achieving perfect absorption in few-layer two-dimensional (2D) materials plays a crucial role in applications such as optoelectronics and sensing. However, the underlying mechanisms of all reported works imply a strongly inherent dependence of the central wavelength on the structural parameters. Here, we propose a structure-parameter-deviation immune method for achieving perfect absorption at any desired wavelength by harnessing the toroidal dipole-bound state in the continuum (TD BIC). We experimentally demonstrate the versatile design with a monolayer-graphene-loaded compound grating structure. Such a TD BIC built upon the TE31 mode allows for the transition from BIC to quasi-BIC without breaking the structural symmetry, enabling the stable resonance wavelength while tailoring the quality factors via variation of the gap distance. Comparison with traditional literature further reveals the superiority of our method in realizing highly robust perfect absorption, with a wavelength stability ratio of >15. Remarkably, this approach can be straightforwardly applied to other 2D materials.

Two-dimensional Janus pentagonal MSeTe (M = Ni, Pd, Pt): promising water-splitting photocatalysts and optoelectronic materials

Inspired by the interesting and novel properties exhibited by Janus transition metal dichalcogenides (TMDs) and two-dimensional pentagonal structures, we here investigated the structural stability, mechanical, electronic, photocatalytic, and optical properties for a class of two-dimensional (2D) pentagonal Janus TMDs, namely penta-MSeTe (M = Ni, Pd, Pt) monolayers, by using density functional theory (DFT) combined with Hubbard's correction (U). Our results showed that these monolayers exhibit good structural stability, appropriate band structures for photocatalysts, high visible light absorption, and good photocatalytic applicability. The calculated electronic properties reveal that the penta-MSeTe are semiconductors with a bandgap range of 2.06-2.39 eV, and their band edge positions meet the requirements for water-splitting photocatalysts in various environments (pH = 0-13). We used stress engineering to seek higher solar-to-hydrogen (STH) efficiency in acidic (pH = 0), neutral (pH = 7) and alkaline (pH = 13) environments for penta-MSeTe from 0% to +8% biaxial and uniaxial strains. Our results showed that penta-PdSeTe stretched 8% along the y direction and demonstrates an STH efficiency of up to 29.71% when pH = 0, which breaks the theoretical limit of the conventional photocatalytic model. We also calculated the optical properties and found that they exhibit high absorption (13.11%) in the visible light range and possess a diverse range of hyperbolic regions. Hence, it is anticipated that penta-MSeTe materials hold great promise for applications in photocatalytic water splitting and optoelectronic devices.

Bottom-Up Photosynthesis of an Air-Stable Radical Semiconductor Showing Photoconductivity to Full Solar Spectrum and X-Ray

Single-component semiconductors with photoresponse to full solar spectrum are highly desirable to simplify the device structure of commercial photodetectors and to improve solar conversion or photocatalytic efficiency but remain scarce. This work reports bottom-up photosynthesis of an air-stable radical semiconductor using BiI3 and a photochromism-active benzidine derivative as a photosensitive functional motif. This semiconductor shows photoconductivity to full solar spectrum contributed by radical and non-radical forms of the benzidine derivative. It has also the potential to detect X-rays because of strong X-ray absorption coefficient. This finding opens up a new synthetic method for radical semiconductors and may find applications on extending photoresponsive ranges of perovskites, transition metal sulfides, and other materials.

Near-Field Photodetection in Direction Tunable Surface Plasmon Polaritons Waveguides Embedded with Graphene

2D materials have manifested themselves as key components toward compact integrated circuits. Because of their capability to circumvent the diffraction limit, light manipulation using surface plasmon polaritons (SPPs) is highly-valued. In this study, plasmonic photodetection using graphene as a 2D material is investigated. Non-scattering near-field detection of SPPs is implemented via monolayer graphene stacked under an SPP waveguide with a symmetric antenna. Energy conversion between radiation power and electrical signals is utilized for the photovoltaic and photoconductive processes of the gold-graphene interface and biased electrodes, measuring a maximum photoresponsivity of 29.2 mA W-1 . The generated photocurrent is altered under the polarization state of the input light, producing a 400% contrast between the maximum and minimum signals. This result is universally applicable to all on-chip optoelectronic circuits.

Functionalizing nanophotonic structures with 2D van der Waals materials

The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.

Highly Efficient Van Der Waals Heterojunction on Graphdiyne toward the High-Performance Photodetector

Graphdiyne (GDY), a new 2D material, has recently proven excellent performance in photodetector applications due to its direct bandgap and high mobility. Different from the zero-gap of graphene, these preeminent properties made GDY emerge as a rising star for solving the bottleneck of graphene-based inefficient heterojunction. Herein, a highly effective graphdiyne/molybdenum (GDY/MoS2 ) type-II heterojunction in a charge separation is reported toward a high-performance photodetector. Characterized by robust electron repulsion of alkyne-rich skeleton, the GDY based junction facilitates the effective electron-hole pairs separation and transfer. This results in significant suppression of Auger recombination up to six times at the GDY/MoS2 interface compared with the pristine materials owing to an ultrafast hot hole transfer from MoS2 to GDY. GDY/MoS2 device demonstrates notable photovoltaic behavior with a short-circuit current of -1.3 × 10-5 A and a large open-circuit voltage of 0.23 V under visible irradiation. As a positive-charge-attracting magnet, under illumination, alkyne-rich framework induces positive photogating effect on the neighboring MoS2 , further enhancing photocurrent. Consequently, the device exhibits broadband detection (453-1064 nm) with a maximum responsivity of 78.5 A W-1 and a high speed of 50 µs. Results open up a new promising strategy using GDY toward effective junction for future optoelectronic applications.

Room Temperature Bias-Selectable, Dual-Band Infrared Detectors Based on Lead Sulfide Colloidal Quantum Dots and Black Phosphorus

A single photodetector capable of switching its peak spectral photoresponse between two wavelength bands is highly useful, particularly for the infrared (IR) bands in applications such as remote sensing, object identification, and chemical sensing. Technologies exist for achieving dual-band IR detection with bulk III-V and II-VI materials, but the high cost and complexity as well as the necessity for active cooling associated with some of these technologies preclude their widespread adoption. In this study, we leverage the advantages of low-dimensional materials to demonstrate a bias-selectable dual-band IR detector that operates at room temperature by using lead sulfide colloidal quantum dots and black phosphorus nanosheets. By switching between zero and forward bias, these detectors switch peak photosensitive ranges between the mid- and short-wave IR bands with room temperature detectivities of 5 × 10⁹ and 1.6 × 10¹¹ cm Hz^1/2 W^-1, respectively. To the best of our knowledge, these are the highest reported room temperature values for low-dimensional material dual-band IR detectors to date. Unlike conventional bias-selectable detectors, which utilize a set of back-to-back photodiodes, we demonstrate that under zero/forward bias conditions the device's operation mode instead changes between a photodiode and a phototransistor, allowing additional functionalities that the conventional structure cannot provide.

Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity

Filter-free miniaturized polarization-sensitive photodetectors have important applications in the next-generation on-chip polarimeters. However, their polarization sensitivity is thus far limited by the intrinsic low diattenuation and inefficient photon-to-electron conversion. Here, we implement experimentally a miniaturized detector based on one-dimensional tellurium nanoribbon, which can significantly improve the photothermoelectric responses by translating the polarization-sensitive absorption into a large temperature gradient together with the finite-size effect of a perfect plasmonic absorber. Our devices exhibit a zero-bias responsivity of 410 V/W and an ultrahigh polarization ratio (2.5 × 10⁴), as well as a peak polarization angle sensitivity of 7.10 V/W•degree, which is one order of magnitude higher than those reported in the literature. Full linear polarimetry detection is also achieved with the proposed device in a simple geometrical configuration. Polarization-coded communication and optical strain measurement are demonstrated showing the great potential of the proposed devices. Our work presents a feasible solution for miniaturized room-temperature infrared photodetectors with ultrahigh polarization sensitivity.

Giant Superlinear Power Dependence of Photocurrent Based on Layered Ta2 NiS5 Photodetector

Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power-dependent photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. This work reports the giant superlinear power dependence of photocurrent based on multilayer Ta₂ NiS₅ . While the fabricated photodetector exhibits good sensitivity (3.1 mS W^-1 per □) and fast photoresponse (31 µs), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from 1.5 to 200 µW µm^-2 , the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, prominent superlinearity is observed with a giant power exponent of γ = 1.5. The unusual photoresponse can be explained by a two-recombination-center model where density of states of the recombination centers (RC) effectively closes all recombination channels. The photodetector is integrated into camera for taking photos with enhanced contrast due to superlinearity. This work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

Large-Area Black Phosphorus/PtSe2 Schottky Junction for High Operating Temperature Broadband Photodetectors

High operating temperature (HOT) broadband photodetectors are urgently necessary for extreme condition applications in infrared-guided missiles, infrared night vision, fire safety imaging, and space exploration sensing. However, conventional photodetectors show dramatic carrier mobility decreases and carrier losses with low photoresponsivity at HOT due to the increased carrier scattering in channels at high temperatures. Herein, the HOT broadband photodetectors from room temperature to 470 K are developed for the first time by large-area black phosphorus (BP)/PtSe₂ films device arrays via a depletion-enhanced photocarrier dynamics strategy. Attributed to the 2D Schottky junction at BP/PtSe₂ interface and resulting in full depleted working channels, the BP/PtSe₂ photodetector arrays exhibit high tolerance to carrier mobility decrease during the increasing operating temperature in a wide wavelength range from 532 to 2200 nm. Thus, the photodetector shows a state-of-the-art operating temperature at 470 K with the photo-responsivity (R) and specific detectivity (D*) of 25 A W^-1 and 6.4 × 10¹¹ Jones under 1850 nm illumination, respectively. Moreover, BP/PtSe₂ photodetector arrays show high-uniformity photo-response in a large area. This work provides new strategies for high-performance broadband photodetector arrays with HOT by Schottky junction of large-area BP/PtSe₂ films.

2D Material Infrared Photonics and Plasmonics

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

Monolayer Graphene-MoSSe van der Waals Heterostructure for Highly Responsive Gate-Tunable Near-Infrared-Sensitive Broadband Fast Photodetector

Transition metal dichalcogenides (TMDCs) are potential two-dimentional materials as natural partners of graphene for highly responsive van der Waals (vdW) heterostructure photodetectors. However, the spectral detection range of the detectors is limited by the optical bandgap of the TMDC, which acts as a light-absorbing medium. Bandgap engineering by making alloy TMDC has evolved as a suitable approach for the development of wide-band photodetectors. Here, broadband (visible to near-infrared) photodetection with high sensitivity in the near-infrared region is demonstrated in a MoSSe/graphene heterostructure. In the ambient environment, the photodetector exhibits high responsivity of 0.6 × 102 A/W and detectivity of 7.9 × 1011 Jones at 800 nm excitation with a power density of 17 fW/μm2 and 10 mV source-drain bias. The photodetector shows appreciable responsivity in self-bias mode due to nonuniform distribution of MoSSe flakes on the graphene layer between the source and drain end and the asymmetry between the two electrodes. Time-dependent photocurrent measurements show fast rise/decay times of ∼38 ms/∼48 ms. A significant gate tunability on the efficiency of the detector has been demonstrated. The device is capable of low power detection and exhibits high operational frequency, gain, and bandwidth. Thus, the MoSSe/graphene heterostructure can be a promising candidate as a high-speed and highly sensitive near-infrared photodetector capable of operating at ambient conditions with low energy consumption.

CO2 Capture Membrane for Long-Cycle Lithium-Air Battery

Lithium-air batteries (LABs) have attracted extensive attention due to their ultra-high energy density. At present, most LABs are operated in pure oxygen (O₂) since carbon dioxide (CO₂) under ambient air will participate in the battery reaction and generate an irreversible by-product of lithium carbonate (Li₂CO₃), which will seriously affect the performance of the battery. Here, to solve this problem, we propose to prepare a CO₂ capture membrane (CCM) by loading activated carbon encapsulated with lithium hydroxide (LiOH@AC) onto activated carbon fiber felt (ACFF). The effect of the LiOH@AC loading amount on ACFF has been carefully investigated, and CCM has an ultra-high CO₂ adsorption performance (137 cm³ g^-1) and excellent O₂ transmission performance by loading 80 wt% LiOH@AC onto ACFF. The optimized CCM is further applied as a paster on the outside of the LAB. As a result, the specific capacity performance of LAB displays a sharp increase from 27,948 to 36,252 mAh g^-1, and the cycle time is extended from 220 h to 310 h operating in a 4% CO₂ concentration environment. The concept of carbon capture paster opens a simple and direct way for LABs operating in the atmosphere.

Self-Powered and Broadband Bismuth Oxyselenide/p-Silicon Heterojunction Photodetectors with Low Dark Current and Fast Response

Inorganic nanomaterials such as graphene, black phosphorus, and transition metal dichalcogenides have attracted great interest in developing optoelectronic devices due to their efficient conversion between light and electric signals. However, the zero band gap nature, the unstable chemical properties, and the low electron mobility constrained their wide applications. Bismuth oxyselenide (Bi₂O₂Se) is gradually showing great research significance in the optoelectronic field. Here, we develop a bismuth oxyselenide/p-silicon (Bi₂O₂Se/p-Si) heterojunction and design a self-powered and broadband Bi₂O₂Se/p-Si heterojunction photodetector with an ultrafast response (2.6 μs) and low dark current (10^-10 A without gate voltage regulation). It possesses a remarkable detectivity of 4.43 × 10¹² cm Hz^1/2 W^-1 and a self-powered photoresponse characteristic at 365-1550 nm (ultraviolet-near-infrared). Meanwhile, the Bi₂O₂Se/p-Si heterojunction photodetector also shows high stability and repeatability. It is expected that the proposed Bi₂O₂Se/p-Si heterojunction photodetector will expand the applications of Bi₂O₂Se in practical integrated circuits in the field of material science, energy development, optical imaging, biomedicine, and other applications.

Plasmonic Silver-Nanoparticle-Catalysed Hydrogen Abstraction from the C(sp3 )-H Bond of the Benzylic Cα atom for Cleavage of Alkyl Aryl Ether Bonds

Selective activation of the C(sp³ )-H bond is an important process in organic synthesis, where efficiently activating a specific C(sp³ )-H bond without causing side reactions remains one of chemistry's great challenges. Here we report that illuminated plasmonic silver metal nanoparticles (NPs) can abstract hydrogen from the C(sp³ )-H bond of the C_α atom of an alkyl aryl ether β-O-4 linkage. The intense electromagnetic near-field generated at the illuminated plasmonic NPs promotes chemisorption of the β-O-4 compound and the transfer of photo-generated hot electrons from the NPs to the adsorbed molecules leads to hydrogen abstraction and direct cleavage of the unreactive ether C_β -O bond under moderate reaction conditions (≈90 °C). The plasmon-driven process has certain exceptional features: enabling hydrogen abstraction from a specific C(sp³ )-H bond, along with precise scission of the targeted C-O bond to form aromatic compounds containing unsaturated, substituted groups in excellent yields.

Emerging evidence on the effects of plant-derived microRNAs in colorectal cancer: a review

Food nutrition and human health are still interesting international issues. Early detection, risk assessment and diet are vital to mitigate the load of intestinal diseases and enhance the quality of life. Plant-derived microRNAs could be transferred to mammalian organisms by cross-kingdom regulation which adjusts relevant target genes for their participation in the process of carcinogenesis. But the mechanism of plant-derived microRNAs in colorectal cancer is still unclear. This review aims to summarize the current pathways of plant-derived microRNAs in colorectal cancer including intestinal bacteria, the tumor microenvironment, plant active substances and protein, discuss the direct or indirect effects of plant-derived microRNAs on the occurrence and/or progression of colorectal cancer and explain why plant-derived microRNAs can be used as a potential anti-cancer agent. Moreover, the drawbacks of plant-derived microRNAs are also discussed in terms of both edible plants and synthetic delivery vectors for RNAi interference technology for human disease treatment. This review will provide a potential way for plant-derived microRNAs to target colorectal cancer.

Two-Dimensional Transition Metal Dichalcogenide Based Biosensors: From Fundamentals to Healthcare Applications

There has been an exponential surge in reports on two-dimensional (2D) materials ever since the discovery of graphene in 2004. Transition metal dichalcogenides (TMDs) are a class of 2D materials where weak van der Waals force binds individual covalently bonded X-M-X layers (where M is the transition metal and X is the chalcogen), making layer-controlled synthesis possible. These individual building blocks (single-layer TMDs) transition from indirect to direct band gaps and have fascinating optical and electronic properties. Layer-dependent opto-electrical properties, along with the existence of finite band gaps, make single-layer TMDs superior to the well-known graphene that paves the way for their applications in many areas. Ultra-fast response, high on/off ratio, planar structure, low operational voltage, wafer scale synthesis capabilities, high surface-to-volume ratio, and compatibility with standard fabrication processes makes TMDs ideal candidates to replace conventional semiconductors, such as silicon, etc., in the new-age electrical, electronic, and opto-electronic devices. Besides, TMDs can be potentially utilized in single molecular sensing for early detection of different biomarkers, gas sensors, photodetector, and catalytic applications. The impact of COVID-19 has given rise to an upsurge in demand for biosensors with real-time detection capabilities. TMDs as active or supporting biosensing elements exhibit potential for real-time detection of single biomarkers and, hence, show promise in the development of point-of-care healthcare devices. In this review, we provide a historical survey of 2D TMD-based biosensors for the detection of bio analytes ranging from bacteria, viruses, and whole cells to molecular biomarkers via optical, electronic, and electrochemical sensing mechanisms. Current approaches and the latest developments in the study of healthcare devices using 2D TMDs are discussed. Additionally, this review presents an overview of the challenges in the area and discusses the future perspective of 2D TMDs in the field of biosensing for healthcare devices.

Super broadband mid-infrared absorbers with ultrathin folded highly-lossy films

Super broadband optical absorbers with ultrathin films have been keenly pursued for a long time. Although highly lossy materials with sharp light attenuation have the potential to become super absorbers, a large percent of light from free space is inevitably reflected back for the distinct impedance mismatch. Here, a simple strategy, of which reducing the thickness of highly-lossy thin films to minish reflectance and simultaneously folding the ultrathin films to make light multiple pass through, is proposed to obtain super broadband mid-infrared absorbers with ultrathin films. Along this line, the absorbers were prepared by depositing Al-doped ZnO film on scaffolds consisted of alumina spherical shells, whose substrates were opaque. When the thickness of Al-doped ZnO is 43 nm and the layer number of scaffolds is three, a maximum average absorptance was achieved as 97.6% over the wavelength range from 3 to 15 μm. Applying this strategy on polished Al foil, excellent infrared camouflage performance on human-body background was demonstrated. Featured by the strong broadband optical absorption with ultrathin films, flexible access to multiple substrates and low-cost procedures, this approach has the potential in widespread applications of infrared thermal emitters and optoelectronic devices.

Comparison of two isolation methods of tobacco-derived extracellular vesicles, their characterization and uptake by plant and rat cells

Plant extracellular vesicles (pEVs) derived from numerous edible sources gain a lot of attention in recent years, mainly due to the potential to efficiently carry bioactive molecules into mammalian cells. In the present study, we focus on isolation of PDNVs (plant-derived nanovesicles) and pEVs from callus culture and from BY-2 culture of Nicotiana tabacum (tobacco). Tobacco was selected as a source of plant vesicles, as it is commonly used by human, moreover it is a model organism with established techniques for cultivation of explant cultures in vitro. Explant cultures are suitable for the isolation of pEVs in large quantities, due to their fast growth in sterile conditions. As the efficiency of isolation methods varies, we were comparing two methods of isolation. We evaluated biophysical and biochemical properties of plant vesicles, as well as differences between isolates. We encountered difficulties in the form of vesicles aggregation, which is often described in publications focused on mammalian nanovesicles. In an effort to prevent vesicle aggregation, we used trehalose in different stages of isolation. We show tobacco-derived vesicles successfully enter tobacco and mesenchymal cell lines. We observed that tobacco-nanovesicles isolated by different methods incorporated fluorescent dye with different efficiency. The results of our study show tobacco-derived vesicles isolated by various isolation methods are able to enter plant, as well as mammalian cells.

First-principles calculations of the optical response of single-layer and bilayer armchair graphene nanoribbons

Electronic and optical properties of single-layer and bilayer armchair graphene nanoribbons are investigated using a first-principles method. Increased nanoribbon width reduces the band gap and causes a red shift in photon absorption energy. The 3n + 2 family of nanoribbons has the smallest band gaps and lowest onset photon absorption energy among the three families considered due to high π-conjugation indicated by exciton wavefunctions. We also compare the bilayer α and β alignments of armchair graphene nanoribbons with their single-layer counterparts. The extra layer of graphene reduces the band gap and onset photon absorption energy, and the difference between the α alignment and the single-layer configuration is more significant than that of the β alignment and the single layer. Our calculations indicate that the optical properties of graphene nanoribbons depend on the details of atomic structures, including nanoribbon width, edge alignment and number of layers. These characteristics are expected to be important in the design of optoelectronic devices.

An Internal-Electrostatic-Field-Boosted Self-Powered Ultraviolet Photodetector

Self-powered photodetectors are of significance for the development of low-energy-consumption and environment-friendly Internet of Things. The performance of semiconductor-based self-powered photodetectors is limited by the low quality of junctions. Here, a novel strategy was proposed for developing high-performance self-powered photodetectors with boosted electrostatic potential. The proposed self-powered ultraviolet (UV) photodetector consisted of an indium tin oxide and titanium dioxide (ITO/TiO₂) heterojunction and an electret film (poly tetra fluoroethylene, PTFE). The PTFE layer introduces a built-in electrostatic field to highly enhance the photovoltaic effect, and its high internal resistance greatly reduces the dark current, and thus remarkable performances were achieved. The self-powered UV photodetector with PTFE demonstrated an extremely high on-off ratio of 2.49 × 10⁵, a responsivity of 76.87 mA/W, a response rise time of 7.44 ms, and a decay time of 3.75 ms. Furthermore, the device exhibited exceptional stability from room temperature to 70 °C. Compared with the conventional ITO/TiO₂ heterojunction without the PTFE layer, the photoresponse of the detector improved by 442-fold, and the light-dark ratio was increased by 8.40 × 10⁵ times. In addition, the detector is simple, easy to fabricate, and low cost. Therefore, it can be used on a large scale. The electrostatic modulation effect is universal for various types of semiconductor junctions and is expected to inspire more innovative applications in optoelectronic and microelectronic devices.

High-Efficiency Infrared Sensing with Optically Excited Graphene-Transition Metal Dichalcogenide Heterostructures

Binary van der Waals heterostructures of graphene (Gr) and transition metal dichalcogenide (TMDC) have evolved as a promising candidate for photodetection with very high responsivity due to the separation of photo-excited electron-hole pairs across the interface. The spectral range of optoelectronic response in such hybrids has so far been limited by the optical bandgap of the light absorbing TMDC layer. Here, the bidirectionality of interlayer charge transfer is utilized for detecting sub-band gap photons in Gr-TMDC heterostructures. A Gr/MoSe₂ heterostructure sequentially driven by visible and near infra-red (NIR) photons is employed, to demonstrate that NIR induced back transfer of charge allows fast and repeatable detection of the low energy photons (less than the optical band gap of the TMDC layer). This mechanism provides photoresponsivity as high as ≈3000 A W^-1 close to the communication wavelength. The experiment provides a new strategy for achieving highly efficient photodetection over a broad range of energies beyond the spectral bandgap with the 2D semiconductor family.

High-performance Mach-Zehnder modulator using tailored plasma dispersion effects in an ITO/graphene-based waveguide

A high-performance electro-optic Mach-Zehnder modulator (MZM) with outstanding characteristics is proposed. The MZM is in a push-pull configuration that is constructed using an ITO/graphene-based silicon waveguide. A novel idea for engineering of the plasma dispersion effect in an ITO/graphene-based waveguide is proposed so that the modulation characteristics of the MZM are highly improved. Plasma dispersion effects of ITO and graphene layers are tailored in such a way that a large difference between real parts of guided mode effective index of the two arms is achieved while their corresponding imaginary parts are equal. As a result, a very low [Formula: see text] of [Formula: see text] is achieved. To the best of our knowledge, this is one of the lowest [Formula: see text] reported for an electro-optic modulator. In addition, the proposed modulator exhibits a very high extinction ratio of more than 30 dB, low insertion loss of 2.8 dB and energy consumption of as low as 10 fJ/bit, which are all promising for optical communication and processing systems.

2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications

Two-dimensional (2D) materials have been widely used in photodetectors owing to their diverse advantages in device fabrication and manipulation, such as integration flexibility, availability of optical operation through an ultrabroad wavelength band, fulfilling of photonic demands at low cost, and applicability in photodetection with high-performance. Recently, transition metal dichalcogenides (TMDCs), black phosphorus (BP), III-V materials, heterostructure materials, and graphene have emerged at the forefront as intriguing basics for optoelectronic applications in the field of photodetection. The versatility of photonic systems composed of these materials enables their wide range of applications, including facilitation of chemical reactions, speeding-up of responses, and ultrasensitive light detection in the ultraviolet (UV), visible, mid-infrared (MIR), and far-infrared (FIR) ranges. This review provides an overview, evaluation, recent advancements as well as a description of the innovations of the past few years for state-of-the-art photodetectors based on two-dimensional materials in the wavelength range from UV to IR, and on the combinations of different two-dimensional crystals with other nanomaterials that are appealing for a variety of photonic applications. The device setup, materials synthesis, operating methods, and performance metrics for currently utilized photodetectors, along with device performance enhancement factors, are summarized.

Self-powered, low-noise and high-speed nanolayered MoSe2/p-GaN heterojunction photodetector from ultraviolet to near-infrared wavelengths

Integration of nanolayered metal chalcogenides with wide-bandgap semiconductors forming pn heterojunction leads to the way of high-performance photodetection. This work demonstrates the fabrication of a few nanometer thick Molybdenum diselenide (MoSe₂)/Mg-doped Gallium Nitride (p-GaN) heterostructure for light detection purposes. The device exhibits low noise broadband spectral response from ultraviolet to near-infrared range (300-950 nm). The band-alignment and the charge transfer at the MoSe₂/p-GaN interface promote self-powered photodetection with high photocurrent to dark current ratio of 2000 and 1000 at 365 nm and 640 nm, respectively. A high responsivity of 130 A W^-1, detectivity of 4.8 × 10¹⁰Jones, and low noise equivalent power of 18 fW/Hz^1/2at 365 nm is achieved at an applied bias of 1 V. Moreover, the transient measurements reveal a fast rise/fall time of 407/710μsec for the fabricated device. These outcomes exemplify the viability of MoSe₂/p-GaN heterostructure for high-speed and low-noise broadband photodetector applications.

Highly Sensitive Photodetectors Based on Monolayer MoS2 Field-Effect Transistors

Molybdenum disulfide (MoS₂) is a promising candidate for the development of high-performance photodetectors, due to its excellent electric and optoelectronic properties. However, most of the reported MoS₂ phototransistors have adopted a back-gate field-effect transistor (FET) structure, requiring applied gate bias voltages as high as 70 V, which made it impossible to modulate each detecting device in the fabricated array. In this paper, buried-gate FETs based on CVD-grown monolayer MoS₂ were fabricated and their electric and photoelectric properties were also systematically investigated. A photoresponsivity of around 6.86 A/W was obtained at 395 nm, under the conditions of zero gate bias voltage and a light power intensity of 2.57 mW/cm². By application of a buried-gate voltage of 8 V, the photoresponsivity increased by nearly 10 times. Furthermore, the response speed of the buried-gate MoS₂ FET phototransistors is measured to be around 350 ms. These results pave the way for MoS₂ photodetectors in practical applications.

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8

In this paper, we report the synthesis of high-quality Ta₂Ni₃Se₈crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 × 10⁷Jones) and comparably short response time (τ_rise= 433 ms,τ_decay= 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm^-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta₂Ni₃Se₈makes it even more important in future electronic and optoelectronic applications.

Harmful Microalgae Detection: Biosensors versus Some Conventional Methods

In the last decade, there has been a steady stream of information on the methods and techniques available for detecting harmful algae species. The conventional approaches to identify harmful algal bloom (HAB), such as microscopy and molecular biological methods are mainly laboratory-based and require long assay times, skilled manpower, and pre-enrichment of samples involving various pre-experimental preparations. As an alternative, biosensors with a simple and rapid detection strategy could be an improvement over conventional methods for the detection of toxic algae species. Moreover, recent biosensors that involve the use of nanomaterials to detect HAB are showing further enhanced detection limits with a broader linear range. The improvement is attributed to nanomaterials' high surface area to volume ratio, excellent biological compatibility with biomolecules, and being capable of amplifying the electrochemical signal. Hence, this review presents the potential usage of biosensors over conventional methods to detect HABs. The methods reported for the detection of harmful algae species, ranging from conventional detection methods to current biosensor approaches will be discussed, along with their respective advantages and drawbacks to indicate the future prospects of biosensor technology for HAB event management.