Heterointerface engineered electronic and magnetic phases of NdNiO3 thin films

Bulk-suppressed and surface-sensitive Raman scattering by transferable plasmonic membranes with irregular slot-shaped nanopores

Raman spectroscopy enables the non-destructive characterization of chemical composition, crystallinity, defects, or strain in countless materials. However, the Raman response of surfaces or thin films is often weak and obscured by dominant bulk signals. Here we overcome this limitation by placing a transferable porous gold membrane, (PAuM) on the surface of interest. Slot-shaped nanopores in the membrane act as plasmonic antennas and enhance the Raman response of the surface or thin film underneath. Simultaneously, the PAuM suppresses the penetration of the excitation laser into the bulk, efficiently blocking its Raman signal. Using graphene as a model surface, we show that this method increases the surface-to-bulk Raman signal ratio by three orders of magnitude. We find that 90% of the Raman enhancement occurs within the top 2.5 nm of the material, demonstrating truly surface-sensitive Raman scattering. To validate our approach, we quantify the strain in a 12.5 nm thin Silicon film and analyze the surface of a LaNiO3 thin film. We observe a Raman mode splitting for the LaNiO3 surface-layer, which is spectroscopic evidence that the surface structure differs from the bulk. These results validate that PAuM gives direct access to Raman signatures of thin films and surfaces.

Impact of Polarity Mismatch in Infinite-Layer Nickelates

The recent discovery of superconductivity in infinite-layer Sr-doped NdNiO2 grown on SrTiO3(001) provides a new platform to explore the conducting mechanism of unconventional superconductors. However, the electronic structure of infinite-layer nickelates remains controversial. In this paper, we systematically compare the structural and electronic properties of NdNiO2 films grown on SrTiO3 and LaAlO3 substrates using first-principles calculations. Our results show that the lattice reconstruction accompanied by electronic reconstruction occurs in nickelate films on both substrates. Although both heterostructures (HSs) are conducting at the interface, the SrTiO3-based HS shows distinct atomic displacement in the interfacial TiO2 layer and significant electron accumulation deep into three SrTiO3 layers below the interface, while the LaAlO3-based HS shows negligible atomic displacement and electron localization in the interfacial AlO2 layer, reflecting the impact of polarity mismatch on the electronic structure. Further, Wannier function calculations reveal that the interface stress has no obvious effect on the splitting energy and hopping integral between Ni 3d and Nd-layer orbitals. Although the hybridization between Ni 3dx2-y2 and Nd 5d orbitals is tiny, the hybridization between the Ni 3dx2-y2 orbital and an itinerant interstitial s (IIS) orbital is significantly strong in both cases, suggesting that the IIS orbital may play a critical role in the superconductivity of nickelates.

Role of electron and hole doping in the NdNi1-xVxO3 nanostructure

Neodymium nickelate, NdNiO3, attracts attention due to the simultaneous occurrence of several phase transitions around the same temperature. The electronic properties of NdNiO3 are extremely complex as structural distortion, electron correlation, charge ordering, and orbital overlapping play significant roles in the transitions. We report the effects of electron and hole injection via doping a single 3d metal, V, in the NdNiO3 nanostructure to understand the variations in the electronic properties without any structural distortion. A reversible resistivity modulation of more than five orders of magnitude via hole doping and complete suppression of the metal to insulator transition via electron doping is observed along with the switching of major charge carriers. The modulation of electronic properties without any structural distortion and external strain opens up new directions to consider the NdNi1-xVxO3 nanostructures applicable as emerging electronic devices.

Resolving the polar interface of infinite-layer nickelate thin films

Nickel-based superconductors provide a long-awaited experimental platform to explore possible cuprate-like superconductivity. Despite similar crystal structure and d electron filling, however, superconductivity in nickelates has thus far only been stabilized in thin-film geometry, raising questions about the polar interface between substrate and thin film. Here we conduct a detailed experimental and theoretical study of the prototypical interface between Nd_1-xSr_xNiO₂ and SrTiO₃. Atomic-resolution electron energy loss spectroscopy in the scanning transmission electron microscope reveals the formation of a single intermediate Nd(Ti,Ni)O₃ layer. Density functional theory calculations with a Hubbard U term show how the observed structure alleviates the polar discontinuity. We explore the effects of oxygen occupancy, hole doping and cation structure to disentangle the contributions of each for reducing interface charge density. Resolving the non-trivial interface structure will be instructive for future synthesis of nickelate films on other substrates and in vertical heterostructures.

An Oxygen Vacancy Memristor Ruled by Electron Correlations

Resistive switching effects offer new opportunities in the field of conventional memories as well as in the booming area of neuromorphic computing. Here the authors demonstrate memristive switching effects produced by a redox-driven oxygen exchange in tunnel junctions based on NdNiO₃ , a strongly correlated electron system characterized by the presence of a metal-to-insulator transition (MIT). Strikingly, a strong interplay exists between the MIT and the redox mechanism, which on the one hand modifies the MIT itself, and on the other hand radically affects the tunnel resistance switching and the resistance states' lifetime. That results in a very unique temperature behavior and endows the junctions with multiple degrees of freedom. The obtained results bring up fundamental questions on the interplay between electronic correlations and the creation and mobility of oxygen vacancies in nickelates, opening a new avenue toward mimicking neuromorphic functions by exploiting the electric-field control of correlated states.

Dimensionality-Controlled Evolution of Charge-Transfer Energy in Digital Nickelates Superlattices

Fundamental understanding and control of the electronic structure evolution in rare-earth nickelates is a fascinating and meaningful issue, as well as being helpful to understand the mechanism of recently discovered superconductivity. Here the dimensionality effect on the ground electronic state in high-quality (NdNiO₃ ) _m /(SrTiO₃ )₁ superlattices is systematically studied through transport and soft X-ray absorption spectroscopy. The metal-to-insulator transition temperature decreases with the thickness of the NdNiO₃ slab decreasing from bulk to 7 unit cells, then increases gradually as m further reduces to 1 unit cell. Spectral evidence demonstrates that the stabilization of insulating phase can be attributed to the increase of the charge-transfer energy between O 2p and Ni 3d bands. The prominent multiplet feature on the Ni L₃ edge develops with the decrease of NdNiO₃ slab thickness, suggesting the strengthening of the charge disproportionate state under the dimensional confinement. This work provides convincing evidence that dimensionality is an effective knob to modulate the charge-transfer energy and thus the collective ground state in nickelates.

Quantifying transfer learning synergies in infinite-layer and perovskite nitrides, oxides, and fluorides

We combine density functional theory simulations and active learning (AL) of element-embedding neural networks (NNs) to explore the sample efficiency for the prediction of vacancy layer formation energies and lattice parameters inABX_ninfinite-layer (n= 2) versus perovskite (n= 3) nitrides, oxides, and fluorides in the spirit of transfer learning. Following a comprehensive data analysis from different thermodynamic, structural, and statistical perspectives, we show that NNs model these observables with high precision, using merely∼30%of the data for training and exclusively theA-,B-, andX-site element names as minimal input devoid of any physicala prioriinformation. Element embedding autonomously arranges the chemical elements with a characteristic recurrent topology, such that their relations are consistent with human knowledge. We compare two different embedding strategies and show that these techniques render additional input such as atomic properties negligible. Simultaneously, we demonstrate that AL is largely independent of the initial training set, and exemplify its superiority over randomly composed training sets. Despite their highly distinct chemistry, the present approach successfully identifies fundamental quantum-mechanical universalities between nitrides, oxides, and fluorides that enhance the combined prediction accuracy by up to 16% with respect to three specialized NNs at equivalent numerical effort. This quantification of synergistic effects provides an impression of the transfer learning improvements one may expect for similarly complex materials. Finally, by embedding the tensor product of theBandXsites and subsequent quantitative cluster analysis, we establish from an unbiased artificial-intelligence perspective that oxides and nitrides exhibit significant parallels, whereas fluorides constitute a rather distinct materials class.

Understanding the Electronic Structure Evolution of Epitaxial LaNi1-xFexO3 Thin Films for Water Oxidation

Rare earth nickelates including LaNiO₃ are promising catalysts for water electrolysis to produce oxygen gas. Recent studies report that Fe substitution for Ni can significantly enhance the oxygen evolution reaction (OER) activity of LaNiO₃. However, the role of Fe in increasing the activity remains ambiguous, with potential origins that are both structural and electronic in nature. On the basis of a series of epitaxial LaNi_1-xFe_xO₃ thin films synthesized by molecular beam epitaxy, we report that Fe substitution tunes the Ni oxidation state in LaNi_1-xFe_xO₃ and a volcano-like OER trend is observed, with x = 0.375 being the most active. Spectroscopy and ab initio modeling reveal that high-valent Fe^3+δ cationic species strongly increase the transition-metal (TM) 3d bandwidth via Ni-O-Fe bridges and enhance TM 3d-O 2p hybridization, boosting the OER activity. These studies deepen our understanding of structural and electronic contributions that give rise to enhanced OER activity in perovskite oxides.

Near-Atomic-Scale Mapping of Electronic Phases in Rare Earth Nickelate Superlattices

Nanoscale mapping of the distinct electronic phases characterizing the metal-insulator transition displayed by most of the rare-earth nickelate compounds is fundamental for discovering the true nature of this transition and the possible couplings that are established at the interfaces of nickelate-based heterostructures. Here, we demonstrate that this can be accomplished by using scanning transmission electron microscopy in combination with electron energy-loss spectroscopy. By tracking how the O K and Ni L edge fine structures evolve across two different NdNiO₃/SmNiO₃ superlattices, displaying either one or two metal-insulator transitions depending on the individual layer thickness, we are able to determine the electronic state of each of the individual constituent materials. We further map the spatial configuration associated with their metallic/insulating regions, reaching unit cell spatial resolution. With this, we estimate the width of the metallic/insulating boundaries at the NdNiO₃/SmNiO₃ interfaces, which is measured to be on the order of four unit cells.

Electrical transport properties and Kondo effect in La1-xPrxNiO3-δ thin films

The Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La_1-xPr_xNiO_3-δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d e_g electrons in Ni²⁺, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni²⁺ acts as an impurity in the background of Ni³⁺. We suggest that when Ni²⁺ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni³⁺ and Ni²⁺ ions, as well as structural disorder.

Spontaneous phase segregation of Sr2NiO3 and SrNi2O3 during SrNiO3 heteroepitaxy

Recent discovery of superconductivity in Nd0.8Sr0.2NiO2 motivates the synthesis of other nickelates for providing insights into the origin of high-temperature superconductivity. However, the synthesis of stoichiometric R 1-x Sr x NiO3 thin films over a range of x has proven challenging. Moreover, little is known about the structures and properties of the end member SrNiO3 Here, we show that spontaneous phase segregation occurs while depositing SrNiO3 thin films on perovskite oxide substrates by molecular beam epitaxy. Two coexisting oxygen-deficient Ruddlesden-Popper phases, Sr2NiO3 and SrNi2O3, are formed to balance the stoichiometry and stabilize the energetically preferred Ni2+ cation. Our study sheds light on an unusual oxide thin-film nucleation process driven by the instability in perovskite structured SrNiO3 and the tendency of transition metal cations to form their most stable valence (i.e., Ni2+ in this case). The resulting metastable reduced Ruddlesden-Popper structures offer a testbed for further studying emerging phenomena in nickel-based oxides.

Spatially Controlled Octahedral Rotations and Metal-Insulator Transitions in Nickelate Superlattices

The properties of correlated oxides can be manipulated by forming short-period superlattices since the layer thicknesses are comparable with the typical length scales of the involved correlations and interface effects. Herein, we studied the metal-insulator transitions (MITs) in tetragonal NdNiO₃/SrTiO₃ superlattices by controlling the NdNiO₃ layer thickness, n in the unit cell, spanning the length scale of the interfacial octahedral coupling. Scanning transmission electron microscopy reveals a crossover from a modulated octahedral superstructure at n = 8 to a uniform nontilt pattern at n = 4, accompanied by a drastically weakened insulating ground state. Upon further reducing n the predominant dimensionality effect continuously raises the MIT temperature, while leaving the antiferromagnetic transition temperature unaltered down to n = 2. Remarkably, the MIT can be enhanced by imposing a sufficiently large strain even with strongly suppressed octahedral rotations. Our results demonstrate the relevance for the control of oxide functionalities at reduced dimensions.

Switching of majority charge carriers by Zn doping in NdNiO3 thin films

We have studied the effects of Zn doping on the structural and electronic properties of epitaxial NdNiO₃ thin films grown on single-crystal LaAlO₃ (001) (LAO) substrates by pulsed laser deposition. The films are deposited in two sets, one with variation in Zn doping, and another with variation in thickness for undoped and 2% Zn doping. The experimental investigations show that Zn occupies Ni-site and that the films are grown with an in-plane compressive strain on LAO. All the films show metal-to-insulator transitions with a thermal hysteresis in the temperature-dependent resistivity curves except 5% Zn-doped film, which remains metallic. The theoretical fits show non-Fermi liquid behaviour, which gets influenced by Zn doping. The Hall resistance measurements clearly show that Zn doping causes injection of holes in the system which affects the electronic properties as follows: i) the metallic conduction increases by two factors just by 0.5% Zn doping whereas, 5% doping completely suppresses the insulating state, ii) a reversal of the sign of Hall coefficient of resistance is observed at low temperature.

Nucleation and Growth Bottleneck in the Conductivity Recovery Dynamics of Nickelate Ultrathin Films

We investigate THz conductivity dynamics in NdNiO₃ and EuNiO₃ ultrathin films (15 unit cells, u.c., ∼5.7 nm thick) following a photoinduced thermal quench into the metallic state and reveal a clear contrast between first- and second-order dynamics. While in EuNiO₃ the conductivity recovers exponentially, in NdNiO₃ the recovery is nonexponential and slower than a simple thermal model. Crucially, it is consistent with first-order dynamics and well-described by a 2d Avrami model, with supercooling leading to metastable phase coexistence on the nano- to mesoscopic scale. This novel observation is a fundamentally dynamic manifestation of the first-order character of the insulator-to-metal transition, which the nanoscale thickness of our films and their fast cooling rate enable us to detect. The large transients seen in our films are promising for fast electronic (and magnetic) switching applications.

Frustration effects at finite temperature in the half filled Hubbard model

We investigate the finite temperature properties of the half filled Hubbard model in two dimensions, with onsite interaction (U), in presence of (frustrating) next nearest neighbor hopping (t') using a semiclassical approximation scheme. We show that introduction oft' results in a finite temperature pseudogapped (PG) phase that separates the smallUFermi liquid and largeUMott insulator. We map out the PG to normal metal crossover temperature scale (T*) as a function ofUandt'. We demonstrate that in the PG phase, the quadratic dependence of resistivity on temperature is violated due to thermally induced spin fluctuations. We conclude with exact diagonalization calculations, that complement our finite temperature results, and indicate the presence of a frustration driven PG state between the Fermi liquid and the Mott insulator at zero temperature as well.

Tunable resistivity exponents in the metallic phase of epitaxial nickelates

We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO₃ as a function of epitaxial strain. Thin films under low strain conditions show a linear dependence of the resistivity versus temperature, consistent with a classical Fermi gas ruled by electron-phonon interactions. In addition, the apparent temperature exponent, n, can be tuned with the epitaxial strain between n = 1 and n = 3. We discuss the critical role played by quenched random disorder in the value of n. Our work shows that the assignment of Fermi/Non-Fermi liquid behaviour based on experimentally obtained resistivity exponents requires an in-depth analysis of the degree of disorder in the material.

Strong electronic correlations in rare-earth nickelates make them prone to unconventional behaviour but extrinsic effects hamper the interpretation of data. Guo et al. show that apparent non-Fermi liquid transport in NdNiO₃ is tuned by strain and disorder, suggesting a more conventional origin.

Low oxygen pressure synthesis of NdNiO3-δ nanowires by electrospinning

Synthesis of RNiO3 (R = rare earth) nanowires can be interesting as building blocks with potential applications in optoelectronic devices. Here, we describe the synthesis and characterization of NdNiO3-δ (NNO) nanowires produced by electrospinning technique via polymeric precursor solution at relatively low temperature and oxygen pressure. These NNO nanowires were characterized by x-ray diffraction (XRD), x-ray photodetection spectroscopy (XPS), Field Emission Scanning Electron Microscopy (Fe-SEM), Magnetization (M(T)) and electrical resistance (R(T)) measurements. SEM images revealed a granular nanowire microstructure of NNO nanostructures, with a distribution of nanowire diameters ranging from 50 to 150 nm. The NNO nanowires also exhibit granular characteristics with an average grain diameter of  40 nm. The x-ray diffraction patterns of the NNO nanowires indicated that these samples exhibited a high degree of crystallinity and their Bragg reflections can be indexed to an orthorhombic-distorted (Pbnm symmetry) perovskite structure. The crystalline structure seems to be slightly texturized in some Bragg directions and with a slightly strained crystallite. M(T) and R(T) measurement as a function of temperature curves show that these NNO samples present a metal-insulator (MI) transition close to T MI  ∼ 198 K, which is usually observed in NNO thin films and bulk samples. The nanostructured shape and these experimental observations can be promising in designing new electronic devices using this strongly correlated oxide.

Observation of an antiferromagnetic quantum critical point in high-purity LaNiO3

Amongst the rare-earth perovskite nickelates, LaNiO₃ (LNO) is an exception. While the former have insulating and antiferromagnetic ground states, LNO remains metallic and non-magnetic down to the lowest temperatures. It is believed that LNO is a strange metal, on the verge of an antiferromagnetic instability. Our work suggests that LNO is a quantum critical metal, close to an antiferromagnetic quantum critical point (QCP). The QCP behavior in LNO is manifested in epitaxial thin films with unprecedented high purities. We find that the temperature and magnetic field dependences of the resistivity of LNO at low temperatures are consistent with scatterings of charge carriers from weak disorder and quantum fluctuations of an antiferromagnetic nature. Furthermore, we find that the introduction of a small concentration of magnetic impurities qualitatively changes the magnetotransport properties of LNO, resembling that found in some heavy-fermion Kondo lattice systems in the vicinity of an antiferromagnetic QCP.

LaNiO₃ is a strange metal, for reasons that are not well understood. Here, Liu et al. report evidence for scattering of charge carriers by antiferromagnetic quantum fluctuations in high-purity epitaxial thin films of LaNiO₃, suggesting it is close to an antiferromagnetic quantum critical point.

Modulation of metal-insulator transitions of NdNiO3/LaNiO3/NdNiO3 trilayers via thickness control of the LaNiO3 layer

Over the last few decades, manipulating the metal-insulator (MI) transition in perovskite oxides (ABO₃) via an external control parameter has been attempted for practical purposes, but with limited success. The substitution of A-site cations is the most widely used technique to tune the MI transition. However, this method introduces unintended disorder, blurring the intrinsic properties. The present study reports the modulation of MI transitions in [10 nm-NdNiO₃/t-LaNiO₃/10 nm-NdNiO₃/SrTiO₃ (100)] trilayers (t = 5, 7, 10, and 20 nm) via the control of the LaNiO₃ thickness. Upon an increase in the thickness of the LaNiO₃ layer, the MI transition temperature undergoes a systematic decrease, demonstrating that bond disproportionation, the MI, and antiferromagnetic transitions are modulated by the LaNiO₃ thickness. Because the bandwidth and the MI transition are determined by the Ni-O-Ni bond angle, this unexpected behavior suggests the transfer of the bond angle from the lower layer into the upper. The bond-angle transfer eventually induces a structural change of the orthorhombic structure of the middle LaNiO₃ layer to match the structure of the bottom and the top NdNiO₃, as evidenced by transmission electron microscopy. This engineering layer sequence opens a novel pathway to the manipulation of the key properties of oxide nickelates, such as the bond disproportionation, the MI transition, and unconventional antiferromagnetism with no impact of disorder.

Scale-invariant magnetic textures in the strongly correlated oxide NdNiO3

Strongly correlated quantum solids are characterized by an inherently granular electronic fabric, with spatial patterns that can span multiple length scales in proximity to a critical point. Here, we use a resonant magnetic X-ray scattering nanoprobe with sub-100 nm spatial resolution to directly visualize the texture of antiferromagnetic domains in NdNiO₃. Surprisingly, our measurements reveal a highly textured magnetic fabric, which we show to be robust and nonvolatile even after thermal erasure across its ordering temperature. The scale-free distribution of antiferromagnetic domains and its non-integral dimensionality point to a hitherto-unobserved magnetic fractal geometry in this system. These scale-invariant textures directly reflect the continuous nature of the magnetic transition and the proximity of this system to a critical point. The present study not only exposes the near-critical behavior in rare earth nickelates but also underscores the potential for X-ray scattering nanoprobes to image the multiscale signatures of criticality near a critical point.

Tuning the Electronic Structure of LaNiO3 through Alloying with Strontium to Enhance Oxygen Evolution Activity

The perovskite oxide LaNiO3 is a promising oxygen electrocatalyst for renewable energy storage and conversion technologies. Here, it is shown that strontium substitution for lanthanum in coherently strained, epitaxial LaNiO3 films (La1- x Sr x NiO3) significantly enhances the oxygen evolution reaction (OER) activity, resulting in performance at x = 0.5 comparable to the state-of-the-art catalyst Ba0.5Sr0.5Co0.8Fe0.2O3- δ . By combining X-ray photoemission and X-ray absorption spectroscopies with density functional theory, it is shown that an upward energy shift of the O 2p band relative to the Fermi level occurs with increasing x in La1- x Sr x NiO3. This alloying step strengthens Ni 3d-O 2p hybridization and decreases the charge transfer energy, which in turn accounts for the enhanced OER activity.

Measuring non-equilibrium dynamics in complex solids with ultrashort X-ray pulses

Strong interactions between electrons give rise to the complexity of quantum materials, which exhibit exotic functional properties and extreme susceptibility to external perturbations. A growing research trend involves the study of these materials away from equilibrium, especially in cases in which the stimulation with optical pulses can coherently enhance cooperative orders. Time-resolved X-ray probes are integral to this type of research, as they can be used to track atomic and electronic structures as they evolve on ultrafast timescales. Here, we review a series of recent experiments where femtosecond X-ray diffraction was used to measure dynamics of complex solids. This article is part of the theme issue 'Measurement of ultrafast electronic and structural dynamics with X-rays'.

Tuning Photovoltaic Performance of Perovskite Nickelates Heterostructures by Changing the A-Site Rare-Earth Element

Perovskite rare-earth nickelates (RNiO₃) have attracted much attention because of their exotic physical properties and rich potential applications. Here, we report systematic tuning of the electronic structures of RNiO₃ (R = Nd, Sm, Gd, and Lu) by isovalent A-site substitution. By integrating RNiO₃ thin films with Nb-doped SrTiO₃ (NSTO), p-n heterojunction photovoltaic cells have been prepared and their performance has been investigated. The open-circuit voltage increases monotonically with decreasing A-site cation radius. This change results in a downward shift of the Fermi level and induces an increase in the built-in potential at the RNiO₃/NSTO heterojunction, with LuNiO₃/NSTO showing the largest open-circuit voltage. At the same time, the short-circuit current initially increases upon changing the A-site element from Nd to Sm. However, the larger bandgaps of GdNiO₃ and LuNiO₃ reduce light absorption which in turn induces a decrease in the short-circuit current. A power conversion efficiency of 1.13% has been achieved by inserting an ultrathin insulating SrTiO₃ layer at the SmNiO₃/NSTO interface. Our study illustrates how changing the A-site cation is an effective strategy for tuning photovoltaic performance and sheds light on which A-site element is the best for photovoltaic applications, which can significantly increase the applicability of nickelates in optoelectric devices.

Strain-mediated effects of oxygen deficiency and variation in non-Fermi liquid behavior of epitaxial PrNiO3-δ thin films

To understand the effects of oxygen variation in combination with different strains in perovskite nickelates, three sets of PrNiO_3-δ thin films S ₁, S ₂ and S ₃ were deposited on (0 0 1) oriented single-crystal wafers of SrTiO₃, LSAT [(LaAlO₃)_0.3(Sr₂TaAlO₆)_0.7] and LaAlO₃, respectively. Two sets of films, S ₁ and S ₂, have tensile strain whereas the films of S ₃ show compressive strain. For each set, two thin films of fixed thickness (5 nm) were deposited; one film was annealed in situ in oxygen partial pressure just after deposition, the other film was not annealed. The difference in oxygen stoichiometry caused a different state of epitaxial strain in the films. So, the strain was induced in the films due to lattice mismatch with substrate, which modified due to oxygen deficiency. These films show non-Fermi liquid (NFL) behavior in the metallic state. The fitting parameters to power-law equation show a systematic tuning of NFL fitting parameters because of variations in strain. Our results show that not only lattice mismatch induced strain, but also oxygen stoichiometry are crucial parameters in changing the state of strain and hence the NFL behavior and electronic properties of perovskite nickelates.

Strain Effect on Oxygen Evolution Reaction Activity of Epitaxial NdNiO3 Thin Films

Epitaxial strain can cause both lattice distortion and oxygen nonstoichiometry, effects that are strongly coupled at heterojunctions of complex nickelate oxides. Here we decouple these structural and chemical effects on the oxygen evolution reaction (OER) by using a set of coherently strained epitaxial NdNiO₃ films. We show that within the regime where oxygen vacancies (V_O) are negligible, compressive strain is favorable for the OER whereas tensile strain is unfavorable; the former induces orbital splitting, resulting in a higher occupancy in the d_{3 z²- r²} orbital and weaker Ni-O chemisorption. However, when the tensile strain is sufficiently large to promote V_O formation, an increase in the OER is also observed. The partial reduction of Ni³⁺ to Ni²⁺ due to V_O makes the e_g occupancy slightly larger than unity, which is thought to account for the increased OER activity. Our work highlights that epitaxial-strain-induced lattice distortion and V_O generation can be individually or collectively exploited to tune OER activity, which is important for the predictive synthesis of high-performance electrocatalysts.

Flexible Metal-Insulator Transitions Based on van der Waals Oxide Heterostructures

Recently, flexible and wearable electronics are highly desirable because of their great potential in the next-generation information devices. In this work, we demonstrate the realization of the metal-insulator transition (MIT) effect in flexible rare-earth nickelate heterostructures. The NdNiO₃ thin films are grown on lattice-mismatched mica substrates along the pseudocubic (111) direction via the van der Waals heteroepitaxy, in which the MIT behaviors are induced and modulated by carefully controlling the lattice strain and the ionic valence state with SrTiO₃ and LaAlO₃ buffering layers. Enhanced MIT properties with sharp transition and significant resistivity change between the metallic and the insulating states are achieved in the NdNiO₃/LaAlO₃/SrTiO₃/mica heterostructures with appropriate in-plane tensile strain and suppressed concentration of Ni²⁺ ions. In addition, the proposed NdNiO₃-based heterostructures exhibit excellent flexibility with reliable MIT characteristics not only in statically concave/convex bending but also in dynamically bending cycling up to 1000 times. The present work provides a platform to design and fabricate new flexible devices integrated with the MIT effect.

Strain-Enhanced Charge Transfer and Magnetism at a Manganite/Nickelate Interface

The strain effect on charge transfer in correlated oxide La_0.8Sr_0.2MnO₃/NdNiO₃ (LSMO/NNO) heterostructures is investigated. This is achieved by carefully tailoring the strain on the two layers using various substrates. In contrast to bare LSMO films, the strain dependence of the enhanced magnetic moment of the LSMO/NNO bilayers strongly suggests that the charge transfer can be controlled via strain engineering in complex oxide heterostructures. Furthermore, our study also reveals that the coercive field, exchange bias, and conductivity are dramatically affected by the strain-modulated charge transfer in LSMO/NNO heterostructures. Our work thus points out a new path to control electronic states in oxide heterostructures to advance the use of interfaces in oxide-based electronics.

Metal-insulator-transition engineering by modulation tilt-control in perovskite nickelates for room temperature optical switching

Correlated transition metal oxide perovskites receive a lot of attention due to their unique physical properties, which are largely driven by distortion of the BO₆ octahedral network. In bulk, the control of the octahedral network is normally obtained by cation substitutions in a random alloy. Similar to the charge donors in semiconductors, cation substitutions will introduce scattering and disorder. The development of artificial heterostructures offers unprecedented opportunities to lattice engineering to achieve desired properties. In this work, we demonstrated a structural analogue of modulation doping in nickelate heterostructures through the interfacial transfer of tilt patterns. Modulation tilt control was used to remotely control the Ni–O bonds in the compound SmNiO₃ and thereby its critical temperature for optimal optical switching application.

In transition metal perovskites ABO₃, the physical properties are largely driven by the rotations of the BO₆ octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes—that is, directly on the bond angles. By intercalating the prototype SmNiO₃ target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials’ properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO₃ compound. With this unique approach, we successfully adjusted the metal–insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.

Non-Fermi liquids in oxide heterostructures

Understanding the anomalous transport properties of strongly correlated materials is one of the most formidable challenges in condensed matter physics. For example, one encounters metal-insulator transitions, deviations from Landau Fermi liquid behavior, longitudinal and Hall scattering rate separation, a pseudogap phase, and bad metal behavior. These properties have been studied extensively in bulk materials, such as the unconventional superconductors and heavy fermion systems. Oxide heterostructures have recently emerged as new platforms to probe, control, and understand strong correlation phenomena. This article focuses on unconventional transport phenomena in oxide thin film systems. We use specific systems as examples, namely charge carriers in SrTiO₃ layers and interfaces with SrTiO₃, and strained rare earth nickelate thin films. While doped SrTiO₃ layers appear to be a well behaved, though complex, electron gas or Fermi liquid, the rare earth nickelates are a highly correlated electron system that may be classified as a non-Fermi liquid. We discuss insights into the underlying physics that can be gained from studying the emergence of non-Fermi liquid behavior as a function of the heterostructure parameters. We also discuss the role of lattice symmetry and disorder in phenomena such as metal-insulator transitions in strongly correlated heterostructures.

Rare-earth nickelates RNiO3: thin films and heterostructures

This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO₃ where R is a trivalent rare-earth R  =  La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron-lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices.

Experimental evidence for bipolaron condensation as a mechanism for the metal-insulator transition in rare-earth nickelates

Many-body effects produce deviations from the predictions of conventional band theory in quantum materials, leading to strongly correlated phases with insulating or bad metallic behavior. One example is the rare-earth nickelates RNiO3, which undergo metal-to-insulator transitions (MITs) whose origin is debated. Here, we combine total neutron scattering and broadband dielectric spectroscopy experiments to study and compare carrier dynamics and local crystal structure in LaNiO3 and NdNiO3. We find that the local crystal structure of both materials is distorted in the metallic phase, with slow, thermally activated carrier dynamics at high temperature. We further observe a sharp change in conductivity across the MIT in NdNiO3, accompanied by slight differences in the carrier hopping time. These results suggest that changes in carrier concentration drive the MIT through a polaronic mechanism, where the (bi)polaron liquid freezes into the insulating phase across the MIT temperature.

Engineering magnetism at functional oxides interfaces: manganites and beyond

The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T _c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

Spin-orbit interaction and Kondo scattering at the PrAlO3/SrTiO3 interface: effects of oxygen content

We report the effects of oxygen pressure during growth ([Formula: see text]) on the electronic and magnetic properties of PrAlO₃ films grown on [Formula: see text]-terminated SrTiO₃ substrates. Resistivity measurements show an increase in the sheet resistance as [Formula: see text] is increased. The saturation of the sheet resistance down to 0.3 K is consistent with Kondo theory for [Formula: see text] torr. Resistivity data fits indicate Kondo temperatures of 16-18 K. For the [Formula: see text] sample, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields due to the Kondo effect. Analysis of the MR data permitted the extraction of the SO interaction critical field for the [Formula: see text] torr interface ([Formula: see text] T). We observed high positive MR for the least oxygenated sample, where a fraction of the n-type carriers are derived from oxygen vacancies and possible cation interdiffusion; for this [Formula: see text] torr sample, Hall effect data indicate a thick conducting layer. Its extremely high MR (∼[Formula: see text]) is attributed to classical behavior due to a distribution of mobilities.

Mott Transition and Magnetism in Rare Earth Nickelates and its Fingerprint on the X-ray Scattering

The metal-insulator transition (MIT) remains among the most thoroughly studied phenomena in solid state physics, but the complexity of the phenomena, which usually involves cooperation of many degrees of freedom including orbitals, fluctuating local moments, magnetism, and the crystal structure, have resisted predictive ab-initio treatment. Here we develop ab-initio theoretical method for correlated electron materials, based on Dynamical Mean Field Theory, which can predict the change of the crystal structure across the MIT at finite temperature. This allows us to study the coupling between electronic, magnetic and orbital degrees of freedom with the crystal structure across the MIT in rare-earth nickelates. We predict the electronic free energy profile of the competing states, and the theoretical magnetic ground state configuration, which is in agreement with neutron scattering data, but is different from the magnetic models proposed before. The resonant elastic X-ray response at the K-edge, which was argued to be a probe of the charge order, is theoretically modelled within the Dynamical Mean Field Theory, including the core-hole interaction. We show that the line-shape of the measured resonant elastic X-ray response can be explained with the “site-selective” Mott scenario without real charge order on Ni sites.

Ramp-Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides

Transition metal oxides are complex electronic systems that exhibit a multitude of collective phenomena. Two archetypal examples are VO₂ and NdNiO₃ , which undergo a metal-insulator phase transition (MIT), the origin of which is still under debate. Here this study reports the discovery of a memory effect in both systems, manifested through an increase of resistance at a specific temperature, which is set by reversing the temperature ramp from heating to cooling during the MIT. The characteristics of this ramp-reversal memory effect do not coincide with any previously reported history or memory effects in manganites, electron-glass or magnetic systems. From a broad range of experimental features, supported by theoretical modelling, it is found that the main ingredients for the effect to arise are the spatial phase separation of metallic and insulating regions during the MIT and the coupling of lattice strain to the local transition temperature of the phase transition. We conclude that the emergent memory effect originates from phase boundaries at the reversal temperature leaving "scars" in the underlying lattice structure, giving rise to a local increase in the transition temperature. The universality and robustness of the effect shed new light on the MIT in complex oxides.

Conductivity and Local Structure of LaNiO3 Thin Films

A marked conductivity enhancement is reported in 6-11 unit cell LaNiO₃ thin films. A maximal conductivity is also observed in ab initio calculations for films of the same thickness. In agreement with results from state of the art scanning transmission electron microscopy, the calculations also reveal a differentiated film structure comprising characteristic surface, interior, and heterointerface structures. Based on this observation, a three-element parallel conductor model is considered and leads to the conclusion that the conductivity enhancement for films of 6-11 unit cells, stems from the onset of intercompetition between the three local structures in the film depth.

Surface reconstructions and related local properties of a BiFeO3 thin film

Coupling between lattice and order parameters, such as polarization in ferroelectrics and/or polarity in polar structures, has a strong impact on surface relaxation and reconstruction. However, up to now, surface structures that involve the termination of both matrix polarization and polar atomic planes have received little attention, particularly on the atomic scale. Here, we study surface structures on a BiFeO₃ thin film using atomic-resolution scanning transmission electron microscopy and spectroscopy. Two types of surface structure are found, depending on the polarization of the underlying ferroelectric domain. On domains that have an upward polarization component, a layer with an Aurivillius-Bi₂O₂-like structural unit is observed. Dramatic changes in local properties are measured directly below the surface layer. On domains that have a downward polarization component, no reconstructions are visible. Calculations based on ab initio density functional theory reproduce the results and are used to interpret the formation of the surface structures.

Localization-driven metal-insulator transition in epitaxial hole-doped Nd1-x Sr x NiO3 ultrathin films

Advances in thin film growth technologies make it possible to obtain ultra-thin perovskite oxide films and open the window for controlling novel electronic phases for use in functional nanoscale electronics, such as switches and sensors. Here, we study the thickness-dependent transport characteristics of high-quality ultrathin Nd_0.9Sr_0.1NiO₃ (Sr-NNO) films, which were grown on LaAlO₃ (0 0 1) single-crystal substrates by using pulsed laser deposition method. Thick Sr-NNO films (25 unit cells) exhibit metallic behavior with the electrical resistivity following the T ⁿ (n  <  2) law corresponding to a non-Fermi liquid system, while a temperature driven metal-insulator transition (MIT) is observed with films of less than 15 unit cells. The transition temperature increases with reducing film thickness, until the insulating characteristic is observed even at room temperature. The emergence of the insulator ground state can be attributed to weak localization driven MIT expected by considering Mott-Ioffe-Regel limit. Furthermore, the magneto-transport study of Sr-NNO ultrathin films also confirms that the observed MIT is due to the disorder-induced localization rather than the electron-electron interactions.

Multiple Supersonic Phase Fronts Launched at a Complex-Oxide Heterointerface

Selective optical excitation of a substrate lattice can drive phase changes across heterointerfaces. This phenomenon is a nonequilibrium analogue of static strain control in heterostructures and may lead to new applications in optically controlled phase change devices. Here, we make use of time-resolved nonresonant and resonant x-ray diffraction to clarify the underlying physics and to separate different microscopic degrees of freedom in space and time. We measure the dynamics of the lattice and that of the charge disproportionation in NdNiO_{3}, when an insulator-metal transition is driven by coherent lattice distortions in the LaAlO_{3} substrate. We find that charge redistribution propagates at supersonic speeds from the interface into the NdNiO_{3} film, followed by a sonic lattice wave. When combined with measurements of magnetic disordering and of the metal-insulator transition, these results establish a hierarchy of events for ultrafast control at complex-oxide heterointerfaces.

Striped nanoscale phase separation at the metal-insulator transition of heteroepitaxial nickelates

Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal–insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscale formation and growth of insulating domains across the temperature-driven MIT in NdNiO₃ epitaxial thin films. Heteroepitaxy is found to strongly determine the nanoscale nature of the phase transition, inducing preferential formation of striped domains along the terraces of atomically flat stepped surfaces. We show that the distribution of transition temperatures is a local property, set by surface morphology and stable across multiple temperature cycles. Our data provide new insights into the MIT of heteroepitaxial nickelates and point to a rich, nanoscale phenomenology in this strongly correlated material.

Probing the evolution of mixed-phase states in materials offers unique insights into the microscopic mechanism of phase transitions. Here, Mattoni et al. report imaging of nanoscale formation and growth of insulating domains across the metal-insulator transition in NdNiO₃ thin films, uncovering a rich interplay between structural and electronic degrees of freedom.

Ground-state oxygen holes and the metal-insulator transition in the negative charge-transfer rare-earth nickelates

The metal–insulator transition and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here we combine X-ray absorption and resonant inelastic X-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of rare-earth nickelates, taking NdNiO₃ thin film as representative example. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for abundant oxygen holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that distinct spectral signatures arise from a Ni 3d⁸ configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy in line with recent models interpreting the metal–insulator transition in terms of bond disproportionation.

Rare-earth perovskite nickelates show intriguing metal–insulator transitions, whose mechanism remains elusive. Here, Bisogni et al. evidenced a 3d⁸ Ni configuration together with abundance of oxygen 2p holes in the ground state of a NdNiO₃ thin film, suggesting a negative charge-transfer scenario.

Pure electronic metal-insulator transition at the interface of complex oxides

In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO₃ in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching

The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition. If these interface dislocations are stable at room temperature, we conjectured, a new route opens to control thickness of VO2 films by postdeposition thinning of relaxed films, overcoming the need for thickness-dependent strain-engineered substrates. This is possible only if thinning does not alter the films' electronic properties. We find that wet etching in a dilute NaOH solution can effectively thin the VO2 films, which continue to show a significant MIT, even when etched to 10 nm, for which directly deposited films show nearly no transition. The structural and chemical composition were not modified by the etching, but the grain size and film roughness were, which modified the hysteresis width and magnitude of the MIT resistance change.

Enhanced Air Stability in REPb3 (RE = Rare Earths) by Dimensional Reduction Mediated Valence Transition

We conceptually selected the compounds REPb3 (RE = Eu, Yb), which are unstable in air, and converted them to the stable materials in ambient conditions by the chemical processes of "nanoparticle formation" and "dimensional reduction". The nanoparticles and the bulk counterparts were synthesized by the solvothermal and high-frequency induction furnace heating methods, respectively. The reduction of the particle size led to the valence transition of the rare earth atom, which was monitored through magnetic susceptibility and X-ray absorption near edge spectroscopy (XANES) measurements. The stability was checked by X-ray diffraction and thermogravimetric analysis over a period of seven months in oxygen and argon atmospheres and confirmed by XANES. The nanoparticles showed outstanding stability toward aerial oxidation over a period of seven months compared to the bulk counterpart, as the latter one is more prone to the oxidation within a few days.

Non-equilibrium control of complex solids by nonlinear phononics

We review some recent advances in the use of optical fields at terahertz frequencies to drive the lattice of complex materials. We will focus on the control of low energy collective properties of solids, which emerge on average when a high frequency vibration is driven and a new crystal structure induced. We first discuss the fundamentals of these lattice rearrangements, based on how anharmonic mode coupling transforms an oscillatory motion into a quasi-static deformation of the crystal structure. We then discuss experiments, in which selectively changing a bond angle turns an insulator into a metal, accompanied by changes in charge, orbital and magnetic order. We then address the case of light induced non-equilibrium superconductivity, a mysterious phenomenon observed in some cuprates and molecular materials when certain lattice vibrations are driven. Finally, we show that the dynamics of electronic and magnetic phase transitions in complex-oxide heterostructures follow distinctly new physical pathways in case of the resonant excitation of a substrate vibrational mode.

Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces

At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed valence has led to the discovery of novel two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3. However, many oxides have a more complex electronic structure, with charge, orbital and/or spin orders arising from strong Coulomb interactions between transition metal and oxygen ions. Such electronic correlations offer a rich playground to engineer functional interfaces but their compatibility with the classical band alignment picture remains an open question. Here we show that beyond differences in electron affinities and polar effects, a key parameter determining charge transfer at correlated oxide interfaces is the energy required to alter the covalence of the metal-oxygen bond. Using the perovskite nickelate (RNiO3) family as a template, we probe charge reconstruction at interfaces with gadolinium titanate GdTiO3. X-ray absorption spectroscopy shows that the charge transfer is thwarted by hybridization effects tuned by the rare-earth (R) size. Charge transfer results in an induced ferromagnetic-like state in the nickelate, exemplifying the potential of correlated interfaces to design novel phases. Further, our work clarifies strategies to engineer two-dimensional systems through the control of both doping and covalence.