Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

Controlled synthesis, properties, and applications of ultralong carbon nanotubes

Carbon nanotubes (CNTs) are typical one-dimensional nanomaterials which have been widely studied for more than three decades since 1991 because of their excellent mechanical, electrical, thermal, and optical properties. Among various types of CNTs, the ultralong CNTs which have lengths over centimeters and defect-free structures exhibit superior advantages for fabricating superstrong CNT fibers, CNT-based chips, transparent conductive films, and high-performance cables. The length, orientation, alignment, defects, cleanliness, and other microscopic characteristics of CNTs have significant impacts on their fundamental physical properties. Therefore, the controlled synthesis and mass production of high-quality ultralong CNTs is the key to fully exploiting their extraordinary properties. Despite significant progress made in the study of ultralong CNTs during the past three decades, the precise structural control and mass production of ultralong CNTs remain a great challenge. In this review, we systematically summarize the growth mechanism and controlled synthesis strategies of ultralong CNTs. We also introduce the progress in the applications of ultralong CNTs. Additionally, we summarize the scientific and technological challenges facing the mass production of ultralong CNTs and provide an outlook and in-depth discussion on the future development direction.

Achieving High-Performance Polymer-Wrapper-Free Aligned Carbon Nanotube Field-Effect Transistors Through Degradable Polymer Wrapping and Efficient Removal Techniques

Semiconducting carbon nanotubes (s-CNTs) have emerged as a promising alternative to traditional silicon for ultrascaled field-effect transistors (FETs), owing to their exceptional properties. Aligned s-CNTs (A-CNTs) are particularly favored for practical applications due to their ability to provide higher driving current and lower contact resistance compared with individual s-CNTs or random networks. Achieving high-semiconducting-purity A-CNTs typically involves conjugated polymer wrapping for selective separation of s-CNTs, followed by self-assembly techniques. However, the presence of the polymer wrapper on A-CNTs can adversely impact electrical contact, gating efficiency, carrier transport, and device-to-device variations, necessitating its complete removal. While various methods have been explored for polymer removal, accurately characterizing the extent of removal remains a challenge. Traditional techniques such as absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) may not accurately depict the remaining polymer content on A-CNTs due to their inherent detection limits. Consequently, the performance of FETs based on pure polymer-wrapper-free A-CNTs is unclear. In this study, we present an approach for preparing high-semiconducting-purity and polymer-wrapper-free A-CNTs using poly[(9,9-dioctylfluorenyl-2,7-dinitrilomethine)-(9,9-dioctylfluorenyl-2,7-dimethine)] (PFO-N-PFO), a degradable polymer, in conjunction with a modified dimension-limited self-alignment process (m-DLSA). Comprehensive transmission electron microscopy (TEM) characterizations, complemented by absorption and XPS characterizations, provide robust evidence of the successful near-complete removal of the polymer wrapper via a cleaning procedure involving acidic degradation, hot solvent rinsing, and vacuum annealing. Furthermore, top-gated FETs based on these high-semiconducting-purity and polymer-wrapper-free A-CNTs exhibit good performance metrics, including an on-current (Ion) of 2.2 mA/μm, peak transconductance (gm) of 1.1 mS/μm, low contact resistance (Rc) of 191 Ω·μm, and negligible hysteresis, representing a significant advancement in the CNT-based FET technology.

Floating Bimetallic Catalysts for Growing 30 cm-Long Carbon Nanotube Arrays with High Yields and Uniformity

Ultralong carbon nanotubes (CNTs) are considered as promising candidates for many cutting-edge applications. However, restricted by the extremely low yields of ultralong CNTs, their practical applications can hardly be realized. Therefore, new methodologies shall be developed to boost the growth efficiency of ultralong CNTs and alleviate their areal density decay at the macroscale level. Herein, a facile, universal, and controllable method for the in situ synthesis of floating bimetallic catalysts (FBCs) is proposed to grow ultralong CNT arrays with high yields and uniformity. Ferrocene and metal acetylacetonates serve as catalyst precursors, affording the successful synthesis of a series of FBCs with controllable compositions. Among these FBCs, the optimized FeCu catalyst increases the areal density of ultralong CNT arrays to a record-breaking value of ≈8100 CNTs mm-1 and exhibits a lifetime 3.40 times longer than that of Fe, thus achieving both high yields and uniformity. A 30-centimeters-long and high-density ultralong CNT array is also successfully grown with the assistance of FeCu catalysts. As evidenced by this kinetic model and molecular dynamics simulations, the introduction of Cu into Fe can simultaneously improve the catalyst fluidity and decrease carbon solubility, and an optimal catalytic performance will be achieved by balancing this tradeoff.

Removing Conjugated Polymers from Aligned Carbon Nanotube Arrays

Aligned carbon nanotube (A-CNT) with high semiconducting purity and high-density have been considered as one of the most promising active channels for field-effect transistors (FETs), but conjugated polymer dispersant residues on the surface of A-CNT have become the main obstacle for its further development in electronics applications. In this work, a series of removable conjugated polymers (CPs) are designed and synthesized to achieve favorable purification and alignment for CNT arrays with a high density of ≈360 CNTs/µm. Furthermore, a removal process of CPs on the CNT array film is developed. Raman spectra show that the CNTs in array film are almost not damaged after the removal process, and the G/D ratio is as high as 35. The field-effect transistors (FETs) are fabricated with a saturation current density up to 600 µA µm-1 and a current on-off ratio of ≈105, even with a relatively long channel length of ≈3 µm.

Evolution of catalyst design for controlled synthesis of chiral single-walled carbon nanotubes

Single-walled carbon nanotubes (SWCNTs) possess superb properties originating from their unique chiral structures. However, accurately controlling the structure of SWCNTs remains challenging due to the structural similarities of their chiral structures, which hinders their widespread application in various fields, particularly in electronics. In recent years, much effort has been devoted to preparing single chiral SWCNTs by adopting three constructive strategies, including growth condition control for structurally unstable liquid catalysts, employing stable solid catalyst design, and pre-synthesis of carbon seeds with a well-defined shape. This review comprehensively discusses the state-of-the-art developments in these approaches as well as their advantages and disadvantages. Moreover, insights into the key challenges and future directions are provided for acquiring chirally pure SWCNTs.

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Semiconducting single-walled carbon nanotubes (CNTs) have ideal electronic, chemical, and mechanical properties and are ideal channel materials for constructing transistors in the post-Moore era. Experiments have shown that CNT-based planar CMOS transistors can be scaled down to sub-10 nm technology nodes, demonstrating excellent performance far exceeding the silicon limit. At the same time, CNT electronic technology is essentially a thin-film transistor technology, which enables the construction of chips on such substrates as glass and polymers with an area of several meters, providing technical support for large-area and flexible electronic applications. In addition, since CNT electronics technology involves only low-temperature processes (less than 400 °C), the monolithic 3D integration of logic and memory devices can be realized which can greatly improve the comprehensive performance of the chip and lead to a thousand-fold performance increase for special data structures, especially in AI applications.

Electrophoretic Deposition of Multi-Walled Carbon Nanotube Coatings on CoCrMo Alloy for Biomedical Applications

Carbon nanotubes are a promising material for use in innovative biomedical solutions due to their unique chemical, mechanical, electrical, and magnetic properties. This work provides a method for the development of ultrasonically assisted electrophoretic deposition of multi-walled carbon nanotubes on a CoCrMo dental alloy. Functionalization of multi-walled carbon nanotubes was carried out by chemical oxidation in a mixture of nitric and sulfuric acids. The modified and unmodified multi-walled carbon nanotubes were anaphoretically deposited on the CoCrMo alloy in an aqueous solution. Chemical composition was studied by Fourier transform infrared spectroscopy. Surface morphology was examined by scanning electron microscopy. The mechanism and kinetics of the electrochemical corrosion of the obtained coatings in artificial saliva at 37 °C were determined using the open-circuit potential method, electrochemical impedance spectroscopy, and anodic polarization curves. The capacitive behavior and high corrosion resistance of the tested electrodes were revealed. It was found that the kinetics of electrochemical corrosion of the CoCrMo electrode significantly decreased in the presence of the functionalized multi-walled carbon nanotube coating. Electrophoretic deposition was shown to be an effective, low-cost, and fast method of producing nanotubes with controlled thickness, homogeneity, and packing density.

Optical Fibers Embedded with As-Grown Carbon Nanotubes for Ultrahigh Nonlinear Optical Responses

Photonic crystal fiber (PCF) embedded with functional materials has demonstrated diverse applications ranging from ultrafast lasers, optical communication to chemical sensors. Many efforts have been made to fabricating carbon nanotube (CNT) based optical fibers by ex situ transfer method; however, often suffer poor uniformity and coverage. Here, the direct growth of CNTs on the inner walls of PCFs by the chemical vapor deposition (CVD) method is reported. A two-step growth method is developed to control the narrow diameter distribution of CNTs to ensure desirable nanotube optical transitions. In the as-fabricated CNT- embedded fiber, third-harmonic generation (THG) has been enhanced by ≈15 times compared with flat CNT film on fused silica. A dual-wavelength all-fiber mode-locked ultrafast laser (≈1561 and ≈1064 nm) is further demonstrated by integrating the 1.36±0.15 nm-diameter CNTs into two kinds of photonic bandgap hollow core PCF (named HC-1550 and HC-1060) as saturable absorbers, using their S11 (≈0.7 eV) and S22 (≈1.2 eV) interband transition respectively. The fiber laser shows stable output of ≈10 mW, ≈800 fs pulse width, and ≈71 MHz repetition rate at 1561 nm wavelength. These results can enable the large-scale applications of CNTs in PCF-based optical devices.

Determine the Complete Configuration of Single-Walled Carbon Nanotubes by One Photograph of Transmission Electron Microscopy

Developing a convenient method to determine the complete structure of single-walled carbon nanotubes (SWNTs) is important to achieve the fully controlled growth of this nanomaterial. However, approaches that can identify handedness at the atomic level with simple equipment, operation, and data analysis are still lacking. Here, the SWNTs/graphene (Gr) vertical heterostructures are artificially constructed with aligned interfaces to realize the lattice interpretation of SWNT upper and lower walls separately by only one transmission electron microscopy image, thus transforming the 3D handedness information to projected 2D space. Gr displays prominent out-of-plane deformation at the interface, promoting the energetic advantage for the aligned interface construction. The interfacial alignment between the SWNT and Gr shows no obvious dependence on either the helical angle or diameter of SWNTs. The half-wrapping of SWNTs by deformed Gr also triggers diversified alterations in electronic structures based on theoretical calculations. 27 specimens with SWNTs prepared by two disparate methods are examined, implying equal handedness distribution in the randomly aligned SWNTs grown on quartz and potential handedness enrichment in horizontal SWNT arrays grown on a-sapphire. This work provides a simple strategy for chiral discrimination and lays a characterization foundation for handedness-selective growth of nanomaterials.

En Route to High-Density Chiral Single-walled Carbon Nanotube Arrays using Solid Trojan Catalysts

Solid catalyst is widely recognized as an effective strategy to control the chirality of single-walled carbon nanotubes (SWNTs). However, it is still not compatible with high density in horizontal arrays. "Trojan" catalysts strategy is one of the most effective methods to realize SWNTs with high density and has great potential in chirality control. Here, the co-realization of high density and chirality controlling for SWNTs in a low-temperature growth process is reported based on the developed solid "Trojan" catalyst. High temperature "Trojan" catalyst formation process provides sufficient catalyst number to acquire high density. These liquid "Trojan" catalysts are cooled to solid state by adopting low growth temperature (540 °C), which can be good template to realize the chirality controlling of SWNTs with exposing six-fold symmetry face, (111). Finally, (9, 6) and (13, 1) SWNTs enriched horizontal array with the purity of ≈90% and density of 4 tubes µm^-1 is realized. The comparison between the distribution of initial catalysts and the density of as-grown tubes indicates no sacrificing on catalysts number to improve chirality selectivity. This work opens a new avenue on the catalyst's design and chirality controlling in SWNTs growth.

Synthesis of Ultralong Carbon Nanotubes with Ultrahigh Yields

Ultralong carbon nanotubes (CNTs) are in huge demand in many cutting-edge fields due to their macroscale lengths, perfect structures, and extraordinary properties, while their practical application is limited by the difficulties in their mass production. Herein, we report the synthesis of ultralong CNTs with a dramatically increased yield by a simple but efficient substrate interception and direction strategy (SIDS), which couples the advantages of floating-catalyst chemical vapor deposition with the flying-kite-like growth mechanism of ultralong CNTs. The SIDS-assisted approach prominently improves the catalyst utilization and significantly increases the yield. The areal density of the ultralong CNT arrays with length of over 1 cm reached a record-breaking value of ∼6700 CNTs mm^-1, which is 2-3 orders of magnitude higher than the previously reported values obtained by traditional methods. The SIDS provides a solution for synthesizing high-quality ultralong CNTs with high yields, laying the foundation for their mass production.

Common salts directed the growth of metal-free horizontal SWNT arrays

Acquiring metal-free horizontal single-walled carbon nanotube (SWNT) arrays is of paramount importance for the development of stable nanodevices. However, the majority of SWNTs are prepared with transition metal-based catalysts, which will inevitably leave metallic residuals and deteriorate the device performance. Here, green and low-cost NaCl is developed as a metal-free catalyst. By employing a strategy of rapid nucleation at a higher temperature followed by steady growth at a lower temperature, the production of a well-defined NaCl catalyst capable of growing metal-free horizontal SWNT arrays with an average density of ∼100 tubes per 100 μm is realized. Besides, we prove that the as-grown metal-free SWNT arrays have a unique advantage in preparing stable devices for eliminating the potential risk of local mass catalyst residuals. Hence, the current study can offer a feasible solution to promote practical applications of SWNT-based next-generation nanodevices.

Structural Design and Fabrication of Multifunctional Nanocarbon Materials for Extreme Environmental Applications

Extreme environments represent numerous harsh environmental conditions, such as temperature, pressure, corrosion, and radiation. The tolerance of applications in extreme environments exemplifies significant challenges to both materials and their structures. Given the superior mechanical strength, electrical conductivity, thermal stability, and chemical stability of nanocarbon materials, such as carbon nanotubes (CNTs) and graphene, they are widely investigated as base materials for extreme environmental applications and have shown numerous breakthroughs in the fields of wide-temperature structural-material construction, low-temperature energy storage, underwater sensing, and electronics operated at high temperatures. Here, the critical aspects of structural design and fabrication of nanocarbon materials for extreme environments are reviewed, including a description of the underlying mechanism supporting the performance of nanocarbon materials against extreme environments, the principles of structural design of nanocarbon materials for the optimization of extreme environmental performances, and the fabrication processes developed for the realization of specific extreme environmental applications. Finally, perspectives on how CNTs and graphene can further contribute to the development of extreme environmental applications are presented.

Femtosecond Er-Doped All-Fiber Laser with High-Density Well-Aligned Carbon-Nanotube-Based Thin-Film Saturable Absorber

We have studied the ultrafast saturation behavior of a high-density well-aligned single-walled carbon nanotubes saturable absorber (HDWA-SWCNT SA), obtained by a high-pressure and high-temperature treatment of commercially available single-wall carbon nanotubes (SWCNTs) and related it to femtosecond erbium-doped fiber laser performance. We have observed the polarization dependence of a nonlinear optical saturation, along with a low saturation energy level of <1 fJ, limited to the detector threshold used, and the ultrafast response time of <250 fs, while the modulation depth was approximately 12%. We have obtained the generation of ultrashort stretched pulses with a low mode-locking launching threshold of ~100 mW and an average output power of 12.5 mW in an erbium-doped ring laser with the hybrid mode-locking of a VDVA-SWNT SA in combination with the effects of nonlinear polarization evolution. Dechirped pulses with a duration of 180 fs were generated, with a repetition rate of about 42.22 MHz. The average output power standard deviation was about 0.06% RMS during 3 h of measurement.

Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design

As the scaling technology in the silicon-based semiconductor industry is approaching physical limits, it is necessary to search for proper materials to be utilized as alternatives for nanoscale devices and technologies. On the other hand, carbon-related nanomaterials have attracted so much attention from a vast variety of research and industry groups due to the outstanding electrical, optical, mechanical and thermal characteristics. Such materials have been used in a variety of devices in microelectronics. In particular, graphene and carbon nanotubes are extraordinarily favorable substances in the literature. Hence, investigation of carbon-related nanomaterials and nanostructures in different ranges of applications in science, technology and engineering is mandatory. This paper reviews the basics, advantages, drawbacks and investigates the recent progress and advances of such materials in micro and nanoelectronics, optoelectronics and biotechnology.

A Hygroscopic Janus Heterojunction for Continuous Moisture-Triggered Electricity Generators

Moisture-triggered electricity generator (MEG) harvesting energy from the ubiquity of atmospheric moisture is one of the promising potential candidates for renewable power demand. However, MEG device performance is strongly dependent on the moisture concentration, which results in its large fluctuation of the electrical output. Here, a Janus heterojunction MEG device consisting of nanostructured silicon and hygroscopic polyelectrolyte incorporating hydrophilic carbon nanotube mesh is proposed to enable ambient moisture harvesting and continuous stable electrical output delivery. The nanostructured silicon with a large surface/volume ratio provides strong coupling interaction with water molecules for charge generation. A polyelectrolyte of polydiallyl dimethylammonium chloride (PDDA) can facilitate charge selective transporting and enhance the effectiveness of moisture-absorbing in an arid environment simultaneously. The conductive, porous, and hydrophilic carbon nanotube mesh allows water to be ripped through as well as the generated charges being collected timely. As such, any generated charge carriers in the Janus heterojunction can be efficiently swept toward their respective electrodes, because of the device asymmetric contact. A MEG device continuously delivers an open-circuit voltage of 1.0 V, short-circuit current density of 8.2 μA/cm², and output power density of 2.2 μW/cm² under an ambient environment (60% relative humidity, 25 °C), which is a record value over the previously reported values. Furthermore, the infrared thermal measurements also reveal that the moisture-triggered electricity generation power is likely ascribed to surrounding thermal energy collected by the MEG device. Our results provide an insightful rationale for the design of device structure and understanding of the working mechanism of MEG, which is of great importance to promote the efficient electricity conversion induced by moisture in the atmosphere.

Universal Map of Gas-Dependent Kinetic Selectivity in Carbon Nanotube Growth

Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. In order to directly grow such nanotube arrays on wafers, control over kinetics and thermodynamics in tube-catalyst systems plays a key role, and further progress requires a comprehensive understanding of seemingly contradictory reports on the growth kinetics. Here, we propose a universal kinetic model that decomposes the growth rates of nanotubes into the adsorption and removal of carbon atoms on the catalysts, and we provide its quantitative verification by ethanol-based isotope labeling experiments. While the removal of carbon from catalysts dominates the growth kinetics under a low supply of precursors, resulting in chirality-independent growth rates, our kinetic model and experiments demonstrate that chiral angle-dependent growth rates emerge when sufficient amounts of carbon and etching agents are cosupplied. The kinetic maps, as a product of generalizing the model, include five types of kinetic selectivity that emerge depending on the absolute quantities of gases with opposing effects. Our findings not only resolve discrepancies existing in the literature but also offer rational strategies to control the chirality, length, and density of nanotube arrays for practical applications.

Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts

The assembly of single-walled carbon nanotubes (CNTs) into high-density horizontal arrays is strongly desired for practical applications, but challenges remain despite myriads of research efforts. Herein, we developed a non-destructive soft-lock drawing method to achieve ultraclean single-walled CNT arrays with a very high degree of alignment (angle standard deviation of ~0.03°). These arrays contained a large portion of nanometre-sized CNT bundles, yielding a high packing density (~400 µm^-1) and high current carrying capacity (∼1.8 × 10⁸ A cm^-2). This alignment strategy can be generally extended to diverse substrates or sources of raw single-walled CNTs. Significantly, the assembled CNT bundles were used as nanometre electrical contacts of high-density monolayer molybdenum disulfide (MoS₂) transistors, exhibiting high current density (~38 µA µm^-1), low contact resistance (~1.6 kΩ µm), excellent device-to-device uniformity and highly reduced device areas (0.06 µm² per device), demonstrating their potential for future electronic devices and advanced integration technologies.

Building a Bridge for Carbon Nanotubes from Nanoscale Structure to Macroscopic Application

Through 30 years of research, researchers have gained a deep understanding of the synthesis, characteristics, and applications of carbon nanotubes (CNTs). However, up to now, there are still few industries using CNT as the leading material. The difficulty of CNTs to be applied in industry is the gap between the properties of CNT-based aggregates and those of a single carbon nanotube. Therefore, how to maintain the intrinsic properties of CNTs when they are assembled into aggregates is of great significance. Herein, we summarize and analyze the research status of CNT materials applied in different fields from proven techniques to potential industries, including energy storage, electronics, mechanical and other applications. For each application, the intrinsic properties of CNTs and the real performances of their aggregates are compared to figure out the key problems in CNT synthesis. Finally, we give an outlook for building a bridge for CNTs from nanoscale structure to macroscopic application, giving inspiration to researchers making efforts toward the real application of carbon nanotubes.

Confined Fe Catalysts for High-Density SWNT Arrays Growth: a New Territory for Catalyst-Substrate Interaction Engineering

Great efforts have been devoted to searching for efficient catalytic systems to produce ultra-high density single-walled carbon nanotube (SWNT) arrays, which lay the foundation for future electronic devices. However, one major obstacle for realizing high-density surface-aligned SWNT arrays is the poor stability of metal nanoparticles in chemical vapor deposition catalytic processes. Recently, Trojan catalyst has been reported to yield unprecedented high-density SWNT arrays with 130 SWNTs per µm on the a-plane (11-20) of the sapphire substrate. Herein, a concept of catalyst confinement effect is put forward to revealing the secret of remarkable growth efficiency of SWNT arrays by Trojan catalyst. Combined experimental and theoretical studies indicate that confinement of catalyst nanoparticles on discrete a-plane strips plays a key role in stabilizing the small nanoparticles. The highly dispersive and active states of catalysts are maintained, which promote the growth of super-dense SWNT arrays. By rationally designing the substrate reconstruction process, large areas of dense SWNT arrays (130 SWNTs per µm) covering the entire substrate are obtained. This approach may provide novel ideas for the synthesis of various high-density 1D nanomaterials.

Carbon Nanotube Based Radio Frequency Transistors for K-Band Amplifiers

Owing to the combination of high carrier mobility and saturation velocity, low intrinsic capacitance, and excellent stability, the carbon nanotube (CNT) has been considered as a perfect semiconductor to construct radio frequency (RF) field-effect transistors (FETs) and circuits with an ultrahigh frequency band. However, the reported CNT RF FETs usually exhibited poor real performance indicated by the as-measured maximum oscillation frequency (f_max), and then the amplifiers, which are the most important and fundamental RF circuits, suffered from a low power gain and a low frequency band. In this work, we build RF transistors on solution-derived randomly orientated CNT films with improved quality and uniformity. The randomly orientated CNT film FETs exhibit the record as-measured maximum f_max of 90 GHz, demonstrating the potential for over 28 GHz (at least one-third of 90 GHz) 5G mmWave (frequency range 2) applications. Benefiting from the large-scale uniformity of CNT films, FETs are designed and fabricated with a large channel width to present low internal resistance for the standard 50 Ω impedance matching guide line, which is critical to construct an RF amplifier. Furthermore, we first demonstrate amplifiers with a maximum power gain up to 11 dB and output third-order intercept point (OIP3) of 15 dBm, both at the K-band, which represents the record of a CNT amplifier and is even comparable with a commercial amplifier based on III-V RF transistors.

Growth of Homogeneous High-Density Horizontal SWNT Arrays on Sapphire through a Magnesium-Assisted Catalyst Anchoring Strategy

In-situ growth of high-density single-walled carbon nanotube (SWNT) arrays with homogeneity is highly desirable for integrated circuits. However, disastrous migration and aggregation of catalyst nanoparticles on substrate has greatly limited the area of as-grown SWNT arrays. Herein, we develop a magnesium-assisted catalyst anchoring strategy to restrain catalyst nanoparticles sintering on substrate. Magnesium modification ameliorates sapphire surface by high temperature solid reaction and thus provides a stronger metal-support interaction (SMSI). Hereby, we realize the direct growth of high-density SWNT arrays that fully cover an entire 10×10 mm² substrate with the local highest density of ≈110 tubes μm^-1 using iron as catalyst. This strategy was also proven universal when employing solid carbide catalysts.

Chemical and topographical patterns combined with solution shear for selective-area deposition of highly-aligned semiconducting carbon nanotubes

Selective deposition of semiconducting carbon nanotubes (s-CNTs) into densely packed, aligned arrays of individualized s-CNTs is necessary to realize their potential in semiconductor electronics. We report the combination of chemical contrast patterns, topography, and pre-alignment of s-CNTs via shear to achieve selective-area deposition of aligned arrays of s-CNTs. Alternate stripes of surfaces favorable and unfavorable to s-CNT adsorption were patterned with widths varying from 2000 nm down to 100 nm. Addition of topography to the chemical contrast patterns combined with shear enabled the selective-area deposition of arrays of quasi-aligned s-CNTs (∼14°) even in patterns that are wider than the length of individual nanotubes (>500 nm). When the width of the chemical and topographical contrast patterns is less than the length of individual nanotubes (<500 nm), confinement effects become dominant enabling the selective-area deposition of much more tightly aligned s-CNTs (∼7°). At a trench width of 100 nm, we demonstrate the lowest standard deviation in alignment degree of 7.6 ± 0.3° at a deposition shear rate of 4600 s^-1, while maintaining an individualized s-CNT density greater than 30 CNTs μm^-1. Chemical contrast alone enables selective-area deposition, but chemical contrast in addition to topography enables more effective selective-area deposition and stronger confinement effects, with the advantage of removal of nanotubes deposited in spurious areas via selective lift-off of the topographical features. These findings provide a methodology that is inherently scalable, and a means to deposit spatially selective, aligned s-CNT arrays for next-generation semiconducting devices.

Horizontal Single-Walled Carbon Nanotube Arrays: Controlled Synthesis, Characterizations, and Applications

Single-walled carbon nanotubes (SWNTs) emerge as a promising material to advance carbon nanoelectronics. However, synthesizing or assembling pure metallic/semiconducting SWNTs required for interconnects/integrated circuits, respectively, by a conventional chemical vapor deposition method or by an assembly technique remains challenging. Recent studies have shown significant scientific breakthroughs in controlled SWNT synthesis/assembly and applications in scaled field effect transistors, which are a critical component in functional nanodevices, thereby rendering the horizontal SWNT array an important candidate for innovating nanotechnology. This review provides a comprehensive analysis of the controlled synthesis, surface assembly, characterization techniques, and potential applications of horizontally aligned SWNT arrays. This review begins with the discussion of synthesis of horizontally aligned SWNTs with regulated direction, density, structure, and theoretical models applied to understand the growth results. Several traditional procedures applied for assembling SWNTs on target surface are also briefly discussed. It then discusses the techniques adopted to characterize SWNTs, ranging from electron/probe microscopy to various optical spectroscopy methods. Prototype applications based on the horizontally aligned SWNTs, such as interconnects, field effect transistors, integrated circuits, and even computers, are subsequently described. Finally, this review concludes with challenges and a brief outlook of the future development in this research field.

Precise Catalyst Production for Carbon Nanotube Synthesis with Targeted Structure Enrichment

The direct growth of single-walled carbon nanotubes (SWCNTs) with a narrow distribution of diameter or chirality remains elusive despite significant benefits in properties and applications. Nanoparticle catalysts are vital for SWCNT synthesis, but how to precisely manipulate their chemistry, size, concentration, and deposition remains difficult, especially within a continuous production process from the gas phase. Here, we demonstrate the preparation of W6Co7 alloyed nanoparticle catalysts with precisely tunable stoichiometry using electrospray, which remain solid state during SWCNT growth. We also demonstrate continuous production of liquid iron nanoparticles with in-line size selection. With the precise size manipulation of catalysts in the range of 1–5 nm, and a nearly monodisperse distribution (σg < 1.2), an excellent size selection of SWCNTs can be achieved. All of the presented techniques show great potential to facilitate the realization of single-chirality SWCNTs production.

High-precision solid catalysts for investigation of carbon nanotube synthesis and structure

The direct growth of single-walled carbon nanotubes (SWCNTs) with narrow chiral distribution remains elusive despite substantial benefits in properties and applications. Nanoparticle catalysts are vital for SWCNT and more generally nanomaterial synthesis, but understanding their effect is limited. Solid catalysts show promise in achieving chirality-controlled growth, but poor size control and synthesis efficiency hampers advancement. Here, we demonstrate the first synthesis of refractory metal nanoparticles (W, Mo, and Re) with near-monodisperse sizes. High concentrations (N = 10⁵ to 10⁷ cm^-3) of nanoparticles (diameter 1 to 5 nm) are produced and reduced in a single process, enabling SWCNT synthesis with controlled chiral angles of 19° ± 5°, demonstrating abundance >93%. These results confirm the interface thermodynamics and kinetic growth theory mechanism, which has been extended here to include temporal dependence of fast-growing chiralities. The solid catalysts are further shown effective via floating catalyst growth, offering efficient production possibilities.

Precise pitch-scaling of carbon nanotube arrays within three-dimensional DNA nanotrenches

Precise fabrication of semiconducting carbon nanotubes (CNTs) into densely aligned evenly spaced arrays is required for ultrascaled technology nodes. We report the precise scaling of inter-CNT pitch using a supramolecular assembly method called spatially hindered integration of nanotube electronics. Specifically, by using DNA brick crystal-based nanotrenches to align DNA-wrapped CNTs through DNA hybridization, we constructed parallel CNT arrays with a uniform pitch as small as 10.4 nanometers, at an angular deviation <2° and an assembly yield >95%.

Chirality Pure Carbon Nanotubes: Growth, Sorting, and Characterization

Single-walled carbon nanotubes (SWCNTs) have been attracting tremendous attention owing to their structure (chirality) dependent outstanding properties, which endow them with great potential in a wide range of applications. The preparation of chirality-pure SWCNTs is not only a great scientific challenge but also a crucial requirement for many high-end applications. As such, research activities in this area over the last two decades have been very extensive. In this review, we summarize recent achievements and accumulated knowledge thus far and discuss future developments and remaining challenges from three aspects: controlled growth, postsynthesis sorting, and characterization techniques. In the growth part, we focus on the mechanism of chirality-controlled growth and catalyst design. In the sorting part, we organize and analyze existing literature based on sorting targets rather than methods. Since chirality assignment and quantification is essential in the study of selective preparation, we also include in the last part a comprehensive description and discussion of characterization techniques for SWCNTs. It is our view that even though progress made in this area is impressive, more efforts are still needed to develop both methodologies for preparing ultrapure (e.g., >99.99%) SWCNTs in large quantity and nondestructive fast characterization techniques with high spatial resolution for various nanotube samples.

Nanoscale Patterning of Carbon Nanotubes: Techniques, Applications, and Future

Carbon nanotube (CNT) devices and electronics are achieving maturity and directly competing or surpassing devices that use conventional materials. CNTs have demonstrated ballistic conduction, minimal scaling effects, high current capacity, low power requirements, and excellent optical/photonic properties; making them the ideal candidate for a new material to replace conventional materials in next-generation electronic and photonic systems. CNTs also demonstrate high stability and flexibility, allowing them to be used in flexible, printable, and/or biocompatible electronics. However, a major challenge to fully commercialize these devices is the scalable placement of CNTs into desired micro/nanopatterns and architectures to translate the superior properties of CNTs into macroscale devices. Precise and high throughput patterning becomes increasingly difficult at nanoscale resolution, but it is essential to fully realize the benefits of CNTs. The relatively long, high aspect ratio structures of CNTs must be preserved to maintain their functionalities, consequently making them more difficult to pattern than conventional materials like metals and polymers. This review comprehensively explores the recent development of innovative CNT patterning techniques with nanoscale lateral resolution. Each technique is critically analyzed and applications for the nanoscale-resolution approaches are demonstrated. Promising techniques and the challenges ahead for future devices and applications are discussed.

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz

Carbon nanotubes (CNTs) have been considered a preferred channel material for constructing high-performance radio frequency (RF) transistors with outstanding current gain cutoff frequency (f_T) and power gain cutoff frequency (f_max) but the highest reported f_max is only 70 GHz. Here, we explore how good RF transistors based on solution-derived randomly oriented semiconducting CNT films, which are the most mature CNT materials for scalable fabrication of transistors and integrated circuits, can be achieved. Owing to the significantly reduced number of CNT/CNT junctions obtained by scaling the channel length down to below 100 nm, we realized RF field-effect transistors (FETs) with maximum transconductance G_m up to 0.38 mS/μm, which is the record among CNT-based RF FETs. After de-embedding the pad-induced capacitances and resistances, the CNT FETs with different gate lengths (L_g) exhibit f_T as high as 103 GHz (intrinsically 281 GHz) or f_max up to 107 GHz (intrinsically 190 GHz), which are the records among CNT-based RF FETs. In particular, the CNT FETs with an L_g of 50 nm present pad de-embedding f_T of 86 GHz and f_max of 85 GHz, and represent the best CNT RF transistor in terms of comprehensive performance to date. To demonstrate the actual high-speed and scalable fabrication of our CNT RF FETs, we fabricated CNT FET-based five-stage ring oscillators with oscillation frequencies above 5 GHz.

Rate-selected growth of ultrapure semiconducting carbon nanotube arrays

Carbon nanotubes (CNTs) are promising candidates for smart electronic devices. However, it is challenging to mediate their bandgap or chirality from a vapor-liquid-solid growth process. Here, we demonstrate rate-selected semiconducting CNT arrays based on interlocking between the atomic assembly rate and bandgap of CNTs. Rate analysis confirms the Schulz-Flory distribution which leads to various decay rates as length increases in metallic and semiconducting CNTs. Quantitatively, a nearly ten-fold faster decay rate of metallic CNTs leads to a spontaneous purification of the predicted 99.9999% semiconducting CNTs at a length of 154 mm, and the longest CNT can be 650 mm through an optimized reactor. Transistors fabricated on them deliver a high current of 14 μA μm⁻¹ with on/off ratio around 10⁸ and mobility over 4000 cm² V⁻¹ s⁻¹. Our rate-selected strategy offers more freedom to control the CNT purity in-situ and offers a robust methodology to synthesize perfectly assembled nanotubes over a long scale.

Carbon nanotubes are considered promising materials for microelectronics, but it is challenging to separate semiconducting tubes from their metallic counterparts. Here, the authors report a self-purification growth process that allows them to obtain long, highly pure semiconducting carbon nanotubes.

Designing Catalysts for Chirality-Selective Synthesis of Single-Walled Carbon Nanotubes: Past Success and Future Opportunity

A major obstacle for the applications of single-walled carbon nanotubes (SWNTs) in electronic devices is their structural diversity, ending in SWNTs with diverse electrical properties. Catalytic chemical vapor deposition has shown great promise in directly synthesizing high-quality SWNTs with a high selectivity to specific chirality (n, m). During the growth process, the tube-catalyst interface plays crucial roles in regulating the SWNT nucleation thermodynamics and growth kinetics, ultimately governing the SWNT chirality distribution. Starting with the introduction of SWNT growth modes, this review seeks to extend the knowledge about chirality-selective synthesis by clarifying the energetically favored SWNT cap nucleation and the threshold step for SWNT growth, which describes how the tube-catalyst interface affects both the nucleus energy and the new carbon atom incorporation. Such understandings are subsequently applied to interpret the (n, m) specific growth achieved on a variety of templates, such as SWNT segments or predefined molecular seeds, transition metal (Fe, Co and Ni)-containing catalysts at low reaction temperatures, W-based alloy catalysts, and metal carbides at relatively high reaction temperatures. The up to date achievements on chirality-controlled synthesis of SWNTs is summarized and the remaining major challenges existing in the SWNT synthesis field are discussed.

Storage of Mechanical Energy Based on Carbon Nanotubes with High Energy Density and Power Density

Energy storage in a proper form is an important way to meet the fast increase in the demand for energy. Among the strategies for storing energy, storage of mechanical energy via suitable media is widely utilized by human beings. With a tensile strength over 100 GPa, and a Young's modulus over 1 TPa, carbon nanotubes (CNTs) are considered as one of the strongest materials ever found and exhibit overwhelming advantages for storing mechanical energy. For example, the tensile-strain energy density of CNTs is as high as 1125 Wh kg^-1 . In addition, CNTs also exhibit great potential for fabricating flywheels to store kinetic energy with both high energy density (8571 Wh kg^-1 ) and high power density (2 MW kg^-1 to 2 GW kg^-1 ). Here, an overview of some typical mechanical-energy-storage systems and materials is given. Then, theoretical and experimental studies on the mechanical properties of CNTs and CNT assemblies are introduced. Afterward, the strategies for utilizing CNTs to store mechanical energy are discussed. In addition, macroscale production of CNTs is summarized. Finally, future trends and prospects in the development of CNTs used as mechanical-energy-storage materials are presented.

The preparation of carbon nanofillers and their role on the performance of variable polymer nanocomposites

New synergic behavior is always inspiring scientists toward the formation of nanocomposites aiming at getting advanced materials with superior performance and/or novel properties. Carbon nanotubes (CNT), graphene, fullerene, and graphite as carbon-based are great fillers for polymeric materials. The presence of these materials in the polymeric matrix would render it several characteristics, such as electrical and thermal conductivity, magnetic, mechanical, and as sensor materials for pressure and other environmental changes. This review presents the most recent works in the use of CNT, graphene, fullerene, and graphite as filler in different polymeric matrixes. The primary emphasis of this review is on CNT preparation and its composites formation, while others carbon-based nano-fillers are also introduced. The methods of making polymer nanocomposites using these fillers and their impact on the properties obtained are also presented and discussed.

How a Solid Catalyst Determines the Chirality of the Single-Wall Carbon Nanotube Grown on It

Although the growth of single-wall carbon nanotubes (SWCNTs) with a chirality selectivity up to 90% has been successfully achieved using solid catalysts ( Yang , F. Nature , 2014 , 510 , 522 ; Zhang , S. ; Nature , 2017 , 543 , 234 , etc.), the underlying mechanism that governs the chirality selection is far from clear. Here we propose a mechanism to understand how a solid catalyst particle determines the structure of the SWCNT grown on it. The mechanism has to satisfy three criteria: (i) thermodynamic selection of SWCNTs that possess a structural symmetry the same as that of the catalyst surface; (ii) kinetic elimination of the achiral SWCNTs with extremely low growth rates; (iii) rough control over the catalyst particle size leads to SWCNTs with only one or a few dominant chiralities. Besides the deep understanding on the mechanisms of experimentally synthesized (12, 6) and (8, 4) SWCNTs, the preference growth of other SWCNTs of the (2 n, n) family, such as the (10, 5) or (6, 3) SWCNTs, by using catalyst surface with a 5- or 3-fold symmetry is predicted. Such a simple three-criteria mechanism deepens our understanding of the selective growth of SWCNTs and provides a guideline for catalyst design for controlled SWCNT synthesis.

Function-driven engineering of 1D carbon nanotubes and 0D carbon dots: mechanism, properties and applications

Metal-free carbonaceous nanomaterials have witnessed a renaissance of interest due to the surge in the realm of nanotechnology. Among myriads of carbon-based nanostructures with versatile dimensionality, one-dimensional (1D) carbon nanotubes (CNTs) and zero-dimensional (0D) carbon dots (CDs) have grown into a research frontier in the past few decades. With extraordinary mechanical, thermal, electrical and optical properties, CNTs are utilized in transparent displays, quantum wires, field emission transistors, aerospace materials, etc. Although CNTs possess diverse characteristics, their most attractive property is their unique photoluminescence. On the other hand, another growing family of carbonaceous nanomaterials, which is CDs, has drawn much research attention due to its cost-effectiveness, low toxicity, environmental friendliness, fluorescence, luminescence and simplicity to be synthesized and functionalized with surface passivation. Benefiting from these unprecedented properties, CDs have been widely employed in biosensing, bioimaging, nanomedicine, and catalysis. Herein, we have systematically presented the fascinating properties, preparation methods and multitudinous applications of CNTs and CDs (including graphene quantum dots). We will discuss how CNTs and CDs have emerged as auspicious nanomaterials for potential applications, especially in electronics, sensors, bioimaging, wearable devices, batteries, supercapacitors, catalysis and light-emitting diodes (LEDs). Last but not least, this review is concluded with a summary, outlook and invigorating perspectives for future research horizons in this emerging platform of carbonaceous nanomaterials.

Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications

Advances in the synthesis and scalable manufacturing of single-walled carbon nanotubes (SWCNTs) remain critical to realizing many important commercial applications. Here we review recent breakthroughs in the synthesis of SWCNTs and highlight key ongoing research areas and challenges. A few key applications that capitalize on the properties of SWCNTs are also reviewed with respect to the recent synthesis breakthroughs and ways in which synthesis science can enable advances in these applications. While the primary focus of this review is on the science framework of SWCNT growth, we draw connections to mechanisms underlying the synthesis of other 1D and 2D materials such as boron nitride nanotubes and graphene.

Aligning Solution-Derived Carbon Nanotube Film with Full Surface Coverage for High-Performance Electronics Applications

The main challenge for application of solution-derived carbon nanotubes (CNTs) in high performance field-effect transistor (FET) is how to align CNTs into an array with high density and full surface coverage. A directional shrinking transfer method is developed to realize high density aligned array based on randomly orientated CNT network film. Through transferring a solution-derived CNT network film onto a stretched retractable film followed by a shrinking process, alignment degree and density of CNT film increase with the shrinking multiple. The quadruply shrunk CNT films present well alignment, which is identified by the polarized Raman spectroscopy and electrical transport measurements. Based on the high quality and high density aligned CNT array, the fabricated FETs with channel length of 300 nm present ultrahigh performance including on-state current I_on of 290 µA µm^-1 (V_ds = -1.5 V and V_gs = -2 V) and peak transconductance g_m of 150 µS µm^-1 , which are, respectively, among the highest corresponding values in the reported CNT array FETs. High quality and high semiconducting purity CNT arrays with high density and full coverage obtained through this method promote the development of high performance CNT-based electronics.

Digital Isotope Coding to Trace the Growth Process of Individual Single-Walled Carbon Nanotubes

Single-walled carbon nanotubes (SWCNTs) are attracting increasing attention as an ideal material for high-performance electronics through the preparation of arrays of purely semiconducting SWCNTs. Despite significant progress in the controlled synthesis of SWCNTs, their growth mechanism remains unclear due to difficulties in analyzing the time-resolved growth of individual SWCNTs under practical growth conditions. Here we present a method for tracing the diverse growth profiles of individual SWCNTs by embedding digitally coded isotope labels. Raman mapping showed that, after various incubation times, SWCNTs elongated monotonically until their abrupt termination. Ex situ analysis offered an opportunity to capture rare chirality changes along the SWCNTs, which resulted in sudden acceleration/deceleration of the growth rate. Dependence on growth parameters, such as temperature and carbon concentration, was also traced along individual SWCNTs, which could provide clues to chirality control. Systematic growth studies with a variety of catalysts and conditions, which combine the presented method with other characterization techniques, will lead to further understanding and control of chirality, length, and density of SWCNTs.

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors

Although chemical vapor deposition (CVD)-grown carbon nanotube (CNT) arrays are considered ideal materials for constructing high-performance field-effect transistors (FETs) and integrated circuits (ICs), a significant gap remains between the required and achieved densities and purities of CNT arrays. Here, we develop a directional shrinking transfer method to realize up to 10-fold density amplification of CNT array films without introducing detectable damage or defects. In addition, the method improves the film uniformity while retaining the perfect alignment and high carrier mobility of 1600 cm² V^-1 s^-1 of CVD-grown CNT arrays. By combining the density amplification method with the thermocapillary flow method developed by Rogers et al., semiconducting CNT arrays with high densities and high qualities are obtained. High-performance FETs with a channel length of 200 nm are demonstrated using these high-density semiconducting CNT arrays, yielding a record-high on-state current density of 150 μA/μm, a peak transconductance of 80 μS/μm, and a current on/off ratio of more than 10⁴ among the CVD-grown CNT-based FETs.

Polymer-based doping control for performance enhancement of wet-processed short-channel CNTFETs

The electrical transport properties of short-channel transistors based on single-walled carbon nanotubes (CNT) are significantly affected by bundling along with solution processing. We report that especially high off currents of CNT transistors are not only related to the incorporation of metallic CNTs but also to the incorporation of CNT bundles. By applying device passivation with poly(4-vinylpyridine), the impact of CNT bundling on the device performance can be strongly reduced due to increased gate efficiency as well as reduced oxygen and water-induced p-type doping, boosting essential field-effect transistor performance parameters by several orders of magnitude. Moreover, this passivation approach allows the hysteresis and threshold voltage of CNT transistors to be tuned.

On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array

Ballistic transport and sub-10 nm channel lengths have been achieved in transistors containing one single-walled carbon nanotube (SWNT). To fill the gap between single-tube transistors and high-performance logic circuits for the replacement of silicon, large-area, high-density, and purely semiconducting (s-) SWNT arrays are highly desired. Here we demonstrate the fabrication of multiple transistors along a purely semiconducting SWNT array via an on-chip purification method. Water- and polymer-assisted burning from site-controlled nanogaps is developed for the reliable full-length removal of metallic SWNTs with the damage to s-SWNTs minimized even in high-density arrays. All the transistors with various channel lengths show large on-state current and excellent switching behavior in the off-state. Since our method potentially provides pure s-SWNT arrays over a large area with negligible damage, numerous transistors with arbitrary dimensions could be fabricated using a conventional semiconductor process, leading to SWNT-based logic, high-speed communication, and other next-generation electronic devices.

Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale 'grooves' formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.