Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride

Quantum-Confined Lifshitz Transition on Weyl Semimetal Td-MoTe2

Adsorption of alkali atoms onto material surfaces is widely utilized for controlling electronic properties and is particularly effective for two-dimensional materials. While tuning the chemical potential and band gap and creating quantum-confined states are well established for alkali adsorption on semiconductors, the effects on semimetallic systems remain largely elusive. Here, utilizing angle-resolved photoemission spectroscopy measurements and density functional theory calculations, we disclose the creation of two-dimensional electron gas and the quantum-confined Lifshitz transition at the surface of a Weyl semimetal Td-MoTe2 by potassium adsorption. Electrons from potassium adatoms are shown to be transferred mainly to the lowest unoccupied band within the gapped part of the Brillouin zone, which, in turn, induces strong surface band bending and quantum confinement in the topmost layer. The quantum-confined topmost layer evolves from a semimetal to a strong metal with a Lifshitz transition departing substantially from the bulk band. The present finding and its underlying mechanism can be exploited for the creation of electronic heterojunctions in van der Waals semimetals.

Pressure-Sensitive Multiple Superconducting Phases and Their Structural Origin in Van der Waals HfS_{2} Up to 160 GPa

Superconductivity has been observed in many insulating transition metal dichalcogenides (TMDCs) under pressure. However, the origin of superconductivity remains elusive due to the lack of studies on their structures at low temperatures. Here, we report the observation of a high-T_{c} superconducting state (SC-I phase) coexisting with other superconducting states in a compressed 1T-HfS_{2} crystal up to approximately 160 GPa. In situ synchrotron x-ray diffraction results exclude the presence of decomposed sulfur and confirm two structural phase transitions at room temperature, as well as an additional transition at low temperature, which contribute to the emergence of multiple superconducting states. The SC-I phase exhibits an unsaturated T_{c} of 16.4 K at 158 GPa, and demonstrates the highest upper critical field among the bulk TMDCs, μ_{0}H_{c2}(0)≈29.7  T for a T_{c}∼15.2  K at 147 GPa, exceeding the weak-coupling Pauli limit. These results reveal abundant SC properties together with sensitive structures in compressed HfS_{2}, and thereby extend our understanding on TMDCs' superconductivity.

Pressure Induced Nonmonotonic Evolution of Superconductivity in 6R-TaS_{2} with a Natural Bulk Van der Waals Heterostructure

The natural bulk Van der Waals heterostructure compound 6R-TaS_{2} consists of alternate stacking 1T- and 1H-TaS_{2} monolayers, creating a unique system that incorporates charge-density-wave (CDW) order and superconductivity (SC) in distinct monolayers. Here, after confirming that the 2D nature of the lattice is preserved up to 8 GPa in 6R-TaS_{2}, we documented an unusual evolution of CDW and SC by conducting high-pressure electronic transport measurements. Upon compression, we observe a gradual suppression of CDW within the 1T layers, while the SC exhibits a dome-shaped behavior that terminates at a critical pressure P_{c} around 2.9 GPa. By taking account of the fact that the substantial suppression of SC is concomitant with the complete collapse of CDW order at P_{c}, we argue that the 6R-TaS_{2} behaves like a stack of Josephson junctions and thus the suppressed superconductivity can be attributed to the weakening of Josephson coupling associated with the presence of CDW fluctuations in the 1T layers. Furthermore, the SC reversely enhances above P_{c}, implying the development of emergent superconductivity in the 1T layers after the melting of T-layer CDW orders. These results show that the 6R-TaS_{2} not only provides a promising platform to explore emergent phenomena but also serves as a model system to study the complex interactions between competing electronic states.

Structural phase transition and potential superconductivity initiated by pressure-driven in 1T-CrSe2

The exploration of the superconducting properties of antiferromagnetic parent compounds containing transition metals under pressure provides a unique idea for finding and designing superconducting materials with better performance. In this paper, the close relationship between the possible superconductivity and structure phase transition of the typical van der Waals layered material 1T-CrSe2induced by pressure is studied by means of electrical transport and x-ray diffraction for the first time. We introduce the possibility of pressure-induced superconductivity at 20 GPa, with a criticalTcof approximately at 4 K. The superconductivity persists up to the highest measured pressure of 70 GPa, with a maximumTc∼ 5 K at 24 GPa. We observed a structure phase transition fromP-3m1 toC2/mspace group in the range of 9.4-11.7 GPa. The results show that the structural phase transition leads to the metallization of 1T-CrSe2and the further pressure effect makes the superconductivity appear in the new structure. The material undergoes a transition from a two-dimensional layered structure to a three-dimensional structure under pressure. This is the first time that possible superconductivity has been observed in 1T-CrSe2.

Bias-dependent photoresponse of Td-WTe2grown by chemical vapor deposition

The type-II Weyl semimetal Td-WTe2is one of the wonder materials for high-performance optoelectronic devices. We report the self-powered Td-WTe2photodetectors and their bias-dependent photoresponse in the visible region (405, 520, 638 nm) driven by the bulk photovoltaic effect. The device shows the responsivity of 15.8 mAW-1and detectivity of 5.2 × 109Jones at 520 nm. Besides, the response time of the WTe2photodetector shows the strong bias-voltage dependent property. This work offers a physical reference for understanding the photoresponse process of Td-WTe2photodetectors.

Van Hove singularity driven enhancement of superconductivity in two-dimensional tungsten monofluoride (WF)

Superconductivity in two-dimensional materials has gained significant attention in the last few years. In this work, we report phonon-mediated superconductivity investigations in monolayer Tungsten monofluoride (WF) by solving anisotropic Migdal Eliashberg equations as implemented in EPW. By employing first-principles calculations, our examination of phonon dispersion spectra suggests that WF is dynamically stable. Our results show that WF has weak electron-phonon coupling (EPC) strength (λ) of 0.49 with superconducting transition temperature (Tc) of 2.6 K. A saddle point is observed at 0.11 eV below the Fermi level (EF) of WF, which corresponds to the Van Hove singularity (VHS). On shifting the Fermi level to the VHS by hole doping (3.7 × 1014cm-2), the EPC strength increases to 0.93, which leads to an increase in theTcto 11 K. However, the superconducting transition temperature of both pristine and doped WF increases to approximately 7.2 K and 17.2 K, respectively, by applying the Full Bandwidth (FBW) anisotropic Migdal-Eliashberg equations. Our results provide a platform for the experimental realization of superconductivity in WF and enhancement of the superconducting transition temperature by adjusting the position ofEFto the VHS.

Quantifying the thickness of WTe2 using atomic-resolution STEM simulations and supervised machine learning

For two-dimensional (2D) materials, the exact thickness of the material often dictates its physical and chemical properties. The 2D quantum material WTe2 possesses properties that vary significantly from a single layer to multiple layers, yet it has a complicated crystal structure that makes it difficult to differentiate thicknesses in atomic-resolution images. Furthermore, its air sensitivity and susceptibility to electron beam-induced damage heighten the need for direct ways to determine the thickness and atomic structure without acquiring multiple measurements or transferring samples in ambient atmosphere. Here, we demonstrate a new method to identify the thickness up to ten van der Waals layers in Td-WTe2 using atomic-resolution high-angle annular dark-field scanning transmission electron microscopy image simulation. Our approach is based on analyzing the intensity line profiles of overlapping atomic columns and building a standard neural network model from the line profile features. We observe that it is possible to clearly distinguish between even and odd thicknesses (up to seven layers), without using machine learning, by comparing the deconvoluted peak intensity ratios or the area ratios. The standard neural network model trained on the line profile features allows thicknesses to be distinguished up to ten layers and exhibits an accuracy of up to 94% in the presence of Gaussian and Poisson noise. This method efficiently quantifies thicknesses in Td-WTe2, can be extended to related 2D materials, and provides a pathway to characterize precise atomic structures, including local thickness variations and atomic defects, for few-layer 2D materials with overlapping atomic column positions.

Pressure-Induced Superconductivity and Topological Quantum Phase Transitions in the Topological Semimetal ZrTe2

Topological transition metal dichalcogenides (TMDCs) have attracted much attention due to their potential applications in spintronics and quantum computations. In this work, the structural and electronic properties of topological TMDCs candidate ZrTe2 are systematically investigated under high pressure. A pressure-induced Lifshitz transition is evidenced by the change of charge carrier type as well as the Fermi surface. Superconductivity is observed at around 8.3 GPa without structural phase transition. A typical dome-shape phase diagram is obtained with the maximum Tc of 5.6 K for ZrTe2 . Furthermore, the theoretical calculations suggest the presence of multiple pressure-induced topological quantum phase transitions, which coexists with emergence of superconductivity. The results demonstrate that ZrTe2 with nontrivial topology of electronic states displays new ground states upon compression.

Interplay of the charge density wave transition with topological and superconducting properties

Exotic phenomena due to the interplay of different quantum orders have been observed and the study of these phenomena has emerged as a new frontier in condensed matter research, especially in the two-dimensional limit. Here, we report the coexistence of charge density waves (CDWs), superconductivity, and nontrivial topology in monolayer 1H-MSe2 (M = Nb, Ta) triggered by momentum-dependent electron-phonon coupling through electron doping. At a critical electron doping concentration, new 2 × 2 CDW phases emerge with nontrivial topology, Dirac cones, and van Hove singularities. Interestingly, these 2 × 2 CDW phases are also superconducting. Our findings not only reveal a route towards realizing nontrivial electronic characters by CDW engineering, but also provide an exciting platform to modulate different quantum states at the confluence of CDWs, superconductivity, nontrivial topology, and electron-phonon coupling.

Pressure-induced physical properties in topological semi-metal TaM2 (M = As, Sb)

In this study, DFT based first principles calculations are used for measuring the structural, elastic, mechanical, electronic, optical and thermodynamic features of topological semimetal TaM2 (M = As, Sb) under various pressures. We conducted the first investigation into the physical properties of the topological semimetal TaM2 (M = As, Sb) under pressure. Formation energy and Born stability criteria justify the compound's thermodynamic and mechanical stability. We used elastic constants, elastic moduli, Kleinman parameter, machinability index, and Vickers hardness to investigate the mechanical properties of topological semimetal TaM2. Poisson's and Pugh's ratios reveal that both compounds change from brittle to ductile in response to pressure. The increasing nature of elastic moduli suggests that TaM2 becomes stiffer under stress. The pressure has a significant effect on the anisotropy factor for both materials. Band structure analysis shows that both compounds are Weyl semi-metals and the d orbital contributes significantly to the formation of the Fermi level, as shown by the density of states (DOS) analysis. Investigation of electronic characteristics provides important support for dissecting optical performance. Both the reflectivity and absorption spectra shift upwards in energy when pressure is increased. The refractive index value decreases and becomes flat in the higher energy region. Based on their refractive indices, both of these materials demonstrate as a high-density optical data storage medium when exposed to the right light source. The thermodynamic properties including sound velocity, and Debye temperature all exhibit an increasing nature with applied pressure. Due to their high Debye temperatures, the components under study have a rather high melting point.

Abnormal Metal-Semiconductor-Like Transition and Exceptional Enhanced Superconducting State in Pressurized Restacked TaS2

Interlayer coupling and stacking order play essential roles in shaping the exotic electronic properties of two-dimensional materials. Here, we employ restacked TaS₂─a novel transition metal dichalcogenide (TMD) with weak vdW bonding and twisted angles─to investigate the strain effects of interlayer modulation on the electronic properties. Under pressure, an unexpected transition from metallic to semiconducting-like states occurs. Superconductivity coexists with the semiconducting-like state over a wide pressure range, which has never before been observed in TMDs. Upon further compression, a new superconducting SC-II state emerges without structural evolution and gradually replaces the initial SC-I state. The emerging SC-II state exhibits robust zero-resistance superconductivity and an ultrahigh upper critical field. The abundant electronic state changes in RS-TaS₂ are strongly related to band-structure engineering resulting from pressure-induced interlayer stacking angle modulation. Our results reveal the remarkable effect of interlayer rearrangement on electronic properties and provide a special way to explore the unique properties of 2D materials.

Improved Thermal Anisotropy of Multi-Layer Tungsten Telluride on Silicon Substrate

WTe₂, a low-symmetry transition metal dichalcogenide, has broad prospects in functional device applications due to its excellent physical properties. When WTe₂ flake is integrated into practical device structures, its anisotropic thermal transport could be affected greatly by the substrate, which matters a lot to the energy efficiency and functional performance of the device. To investigate the effect of SiO₂/Si substrate, we carried out a comparative Raman thermometry study on a 50 nm-thick supported WTe₂ flake (with κ_zigzag = 62.17 W·m^-1·K^-1 and κ_armchair = 32.93 W·m^-1·K^-1), and a suspended WTe₂ flake of similar thickness (with κ_zigzag = 4.45 W·m^-1·K^-1, κ_armchair = 4.10 W·m^-1·K^-1). The results show that the thermal anisotropy ratio of supported WTe₂ flake (κ_zigzag/κ_armchair ≈ 1.89) is about 1.7 times that of suspended WTe₂ flake (κ_zigzag/κ_armchair ≈ 1.09). Based on the low symmetry nature of the WTe₂ structure, it is speculated that the factors contributing to thermal conductivity (mechanical properties and anisotropic low-frequency phonons) may have affected the thermal conductivity of WTe₂ flake in an uneven manner when supported on a substrate. Our findings could contribute to the 2D anisotropy physics and thermal transport study of functional devices based on WTe₂ and other low-symmetry materials, which helps solve the heat dissipation problem and optimize thermal/thermoelectric performance for practical electronic devices.

Enhanced Superconductivity and Upper Critical Field in Ta-Doped Weyl Semimetal Td -MoTe2

2D transition metal dichalcogenides are promising platforms for next-generation electronics and spintronics. The layered Weyl semimetal (W,Mo)Te₂ series features structural phase transition, nonsaturated magnetoresistance, superconductivity, and exotic topological physics. However, the superconducting critical temperature of the bulk (W,Mo)Te₂ remains ultralow without applying a high pressure. Here, the significantly enhanced superconductivity is observed with a transition temperature as large as about 7.5 K in bulk Mo_{1- x} Ta_x Te₂ single crystals upon Ta doping (0 ≤ x ≤ 0.22), which is attributed to an enrichment of density of states at the Fermi level. In addition, an enhanced perpendicular upper critical field of 14.5 T exceeding the Pauli limit is also observed in T_d -phase Mo_{1- x} Ta_x Te₂ (x = 0.08), indicating the possible emergence of unconventional mixed singlet-triplet superconductivity owing to the inversion symmetry breaking. This work provides a new pathway for exploring the exotic superconductivity and topological physics in transition metal dichalcogenides.

Superconductor Vortex Spectrum Including Fermi Arc States in Time-Reversal Symmetric Weyl Semimetals

Using semiclassics to surmount the hurdle of bulk-surface inseparability, we derive the superconductor vortex spectrum in nonmagnetic Weyl semimetals and show that it stems from the Berry phase of orbits made of Fermi arcs on opposite surfaces and bulk chiral modes. Tilting the vortex transmutes it between bosonic, fermionic, and supersymmetric, produces periodic peaks in the density of states that signify novel nonlocal Majorana modes, and yields a thickness-independent spectrum at magic "magic angles." We propose (Nb,Ta)P as candidate materials and tunneling spectroscopy as the ideal experiment.

Evidences of Topological Surface States in the Nodal-Line Semimetal SnTaS2 Nanoflakes

Exploring the topological surface state of a topological semimetal by the transport technique has always been a big challenge because of the overwhelming contribution of the bulk state. In this work, we perform systematic angular-dependent magnetotransport measurements and electronic band calculations on SnTaS₂ crystals, a layered topological nodal-line semimetal. Distinct Shubnikov-de Haas quantum oscillations were observed only in SnTaS₂ nanoflakes when the thickness was below about 110 nm, and the oscillation amplitudes increased significantly with decreasing thickness. By analysis of the oscillation spectra, together with the theoretical calculation, a two-dimensional and topological nontrivial nature of the surface band is unambiguously identified, providing direct transport evidence of drumhead surface state for SnTaS₂. Our comprehensive understanding of the Fermi surface topology of the centrosymmetric superconductor SnTaS₂ is crucial for further research on the interplay of superconductivity and nontrivial topology.

Phase transitions and suppression of magnetoresistance in WTe2-xSexsystem

X-ray diffraction, Raman spectroscopy, and electrical resistivity measurements on polycrystalline WTe2-xSe_x(0 ⩽ x ⩽ 0.8) reveal aT_d-1T'structural phase transition and suppression of magnetoresistance atx = 0.2. These phenomena are consistent with the pressure phase diagram of WTe₂. However, chemical pressure due to substitution of smaller Se ion cannot generate pressure required for the phase transition. Strain induced by sample inhomogeneity is believed to be a trigger to the behaviors. In agreement with previous predictions and reports, a mixed phase of1T'and 2Hstructures was also detected in Se-rich samples. Coincidentally atx = 0.2, electrical resistivity analysis suggests a phase transition from a metallic phase to a nonmetallic phase that is possibly a topological-insulating phase.

Patterned diamond anvils prepared via laser writing for electrical transport measurements of thin quantum materials under pressure

Quantum materials exhibit intriguing properties with important scientific values and huge technological potential. Electrical transport measurements under hydrostatic pressure have been influential in unraveling the underlying physics of many quantum materials in bulk form. However, such measurements have not been applied widely to samples in the form of thin flakes, in which new phenomena can emerge, due to the difficulty in attaching fine wires to a thin sample suitable for high-pressure devices. Here, we utilize a home-built direct laser writing system to functionalize a diamond anvil to directly integrate the capability of conducting electrical transport measurements of thin flakes with a pressure cell. With our methodology, the culet of a diamond anvil is equipped with a set of custom-designed conducting tracks. We demonstrate the superiority of these tracks as electrodes for the studies of thin flakes by presenting the measurement of pressure-enhanced superconductivity and quantum oscillations in a flake of MoTe₂.

Thickness and defect dependent electronic, optical and thermoelectric features of [Formula: see text]

Transition metal dichalcogenides (TMDs) receive significant attention due to their outstanding electronic and optical properties. In this study, we investigate the electronic, optical, and thermoelectric properties of single and few layer [Formula: see text] in detail utilizing first-principles methods based on the density functional theory (DFT). Within the scope of both PBE and HSE06 including spin orbit coupling (SOC), the simulations predict the electronic band gap values to decrease as the number of layers increases. Moreover, spin-polarized DFT calculations combined with the semi-classical Boltzmann transport theory are applied to estimate the anisotropic thermoelectric power factor (Seebeck coefficient, S) for [Formula: see text] in both the monolayer and multilayer limit, and S is obtained below the optimal value for practical applications. The optical absorbance of [Formula: see text] monolayer is obtained to be slightly less than the values reported in literature for 2H TMD monolayers of [Formula: see text], [Formula: see text], and [Formula: see text]. Furthermore, we simulate the impact of defects, such as vacancy, antisite and substitution defects, on the electronic, optical and thermoelectric properties of monolayer [Formula: see text]. Particularly, the Te-[Formula: see text] substitution defect in parallel orientation yields negative formation energy, indicating that the relevant defect may form spontaneously under relevant experimental conditions. We reveal that the electronic band structure of [Formula: see text] monolayer is significantly influenced by the presence of the considered defects. According to the calculated band gap values, a lowering of the conduction band minimum gives rise to metallic characteristics to the structure for the single Te(1) vacancy, a diagonal Te line defect, and the Te(1)-[Formula: see text] substitution, while the other investigated defects cause an opening of a small positive band gap at the Fermi level. Consequently, the real ([Formula: see text]) and imaginary ([Formula: see text]) parts of the dielectric constant at low frequencies are very sensitive to the applied defects, whereas we find that the absorbance (A) at optical frequencies is less significantly affected. We also predict that certain point defects can enhance the otherwise moderate value of S in pristine [Formula: see text] to values relevant for thermoelectric applications. The described [Formula: see text] monolayers, as functionalized with the considered defects, offer the possibility to be applied in optical, electronic, and thermoelectric devices.

Protonation enhanced superconductivity in PdTe2

Electrochemical ionic liquid gating is an effective way to intercalate ions into layered materials and modulate the properties. Here we report an enhanced superconductivity in a topological superconductor candidate PdTe₂through electrochemical gating procedure. The superconducting transition temperature was increased to approximately 3.2 K by ionic gating induced protonation at room temperature. Moreover, a further enhanced superconductivity of both superconducting transition temperature and superconducting volume fraction was observed after the gated samples were placed in a glove box for 2 months. This may be caused by the diffusion of protons in the gated single crystals, which is rarely reported in electrochemical ionic liquid gating experiments. Our results further the superconducting study of PdTe₂and may reveal a common phenomenon in the electrochemical gating procedure.

Pressure evolution of electronic and structural properties in transition metal dichalcogenide 1T-Co1.06Te2

Two-dimensional transition metal dichalcogenides (TMDs) are important materials for promising electronic devices because they usually exhibit excellent and highly tunable electronic properties. Here, we report on the pressure-driven electronic phase transition in a TMD 1T-Co_1.06Te₂. High-pressure transport measurements reveal a sign reversal of the Hall coefficients at a critical point ofP_C∼ 32 GPa, evidencing a transition from hole band(s) dominated transport into one that is dominated by electron band(s). Synchrotron x-ray diffraction experiments demonstrate that no structural phase transition occurs below 46.3 GPa, indicating an electronic origin of the transition. Moreover, a kink anomaly of the lattice constant ratioc/ais also observed atP=P_C. These results might indicate a Lifshitz transition which refers to a change of Fermi surface topology in absence of structural transition.

Pressured-induced superconducting phase with large upper critical field and concomitant enhancement of antiferromagnetic transition in EuTe2

We report an unusual pressure-induced superconducting state that coexists with an antiferromagnetic ordering of Eu²⁺ moments and shows a large upper critical field comparable to the Pauli paramagnetic limit in EuTe₂. In concomitant with the emergence of superconductivity with T_c ≈ 3–5 K above P_c ≈ 6 GPa, the antiferromagnetic transition temperature T_N(P) experiences a quicker rise with the slope increased dramatically from dT_N/dP = 0.85(14) K/GPa for P ≤ P_c to 3.7(2) K/GPa for P ≥ P_c. Moreover, the superconducting state can survive in the spin-flop state with a net ferromagnetic component of the Eu²⁺ sublattice under moderate magnetic fields μ₀H ≥ 2 T. Our findings establish the pressurized EuTe₂ as a rare magnetic superconductor possessing an intimated interplay between magnetism and superconductivity.

Here, the authors report pressure-induced superconductivity with concomitant enhancement of antiferromagnetic transition in layered EuTe₂. The superconductivity is distinctly characterized by the high upper critical fields exceeding the Pauli limit among binary tellurides, a prerequisite of the coexistence of ferromagnetism with superconductivity.

A new class of bilayer kagome lattice compounds with Dirac nodal lines and pressure-induced superconductivity

Kagome lattice composed of transition-metal ions provides a great opportunity to explore the intertwining between geometry, electronic orders and band topology. The discovery of multiple competing orders that connect intimately with the underlying topological band structure in nonmagnetic kagome metals AV3Sb5 (A = K, Rb, Cs) further pushes this topic to the quantum frontier. Here we report a new class of vanadium-based compounds with kagome bilayers, namely AV6Sb6 (A = K, Rb, Cs) and V6Sb4, which, together with AV3Sb5, compose a series of kagome compounds with a generic chemical formula (Am-1Sb2m)(V3Sb)n (m = 1, 2; n = 1, 2). Theoretical calculations combined with angle-resolved photoemission measurements reveal that these compounds feature Dirac nodal lines in close vicinity to the Fermi level. Pressure-induced superconductivity in AV6Sb6 further suggests promising emergent phenomena in these materials. The establishment of a new family of layered kagome materials paves the way for designer of fascinating kagome systems with diverse topological nontrivialities and collective ground states.

Organic self-assembled monolayers on superconducting NbSe2: interfacial electronic structure and energetics

While organic self-assembled monolayers (SAMs) have been widely used to modify the work function of metal and metal-oxide surfaces, their application to tune the critical temperature of a superconductor has only been considered recently when SAMs were deposited on NbSe₂monolayers (Calavalle et al 2021Nano Lett.21136-143). Here, we describe the results of density functional theory calculations performed on the experimentally reported organic/NbSe₂systems. Our objectives are: (i) to determine how the organic layers impact the NbSe₂work function and electronic density of states; (ii) to understand the possible correlation with the experimental variations in superconducting behavior upon SAM deposition. We find that, upon adsorption of the organic monolayers, the work-function modulation induced by the SAM and interface dipoles is consistent with the experimental results. However, there occurs no significant difference in the electronic density of states near the Fermi level, a consequence of the absence of any charge transfer across the organic/NbSe₂interfaces. Therefore, our results indicate that it is not a SAM-induced tuning of the NbSe₂density of states near the Fermi level that leads to the tuning of the superconducting critical temperature. This calls for further explorations, both experimentally and theoretically, of the mechanism underlying the superconducting critical temperature variation upon formation of SAM/NbSe₂interfaces.

Record-High Superconductivity in Transition Metal Dichalcogenides Emerged in Compressed 2H-TaS2

Pressure has always been an effective method for uncovering novel phenomena and properties in condensed matter physics. Here, an electrical transport study is carried on 2H-TaS₂ up to ≈208 GPa, and an unexpected superconducting state (SC-II) emerging around 86.1 GPa with an initial critical temperature (T_c ) of 9.6 K is found. As pressure increases, the T_c enhances rapidly and reaches a maximum of 16.4 K at 157.4 GPa, which sets a new record for transition metal dichalcogenides (TMDs). The original superconducting state (SC-I) is found to be re-enhanced above 100 GPa after the recession around 10 GPa, and coexists with SC-II to the highest pressure applied in this work. In situ high-pressure X-ray diffraction and Hall effect measurements reveal that the occurrence of SC-II is accompanied by a structural modification and a concurrent enhancement of hole carrier density. The new high-T_c superconducting state in 2H-TaS₂ can be attributed to the change of the electronic states near the Fermi surface, owing to pressure-induced interlayer modulation. It is the first time finding this remarkable superconducting state in TMDs, which not only brings a new broad of perspective on layered materials but also expands the field of pressure-modified superconductivity.

Large-Gap Quantum Spin Hall State and Temperature-Induced Lifshitz Transition in Bi4Br4

Searching for quantum spin Hall insulators with large fully opened energy gap to overcome the thermal disturbance at room temperature has attracted tremendous attention because of the robustness of one-dimensional (1D) spin-momentum locked topological edge states in the practical applications of electronic devices and spintronics. Here, we report the investigation of topological nature of monolayer Bi₄Br₄ by the techniques of angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy. The possible topological nontriviality of 1D edge state integrals within the large energy gap (∼0.2 eV) is revealed by the first-principle calculations. The ARPES measurements at different temperatures show a temperature-induced Lifshitz transition, corresponding to the resistivity anomaly evoked by the chemical potential shift. The connection between the emergency of superconductivity and the Lifshitz transition is discussed.

Discovery of Dome-Shaped Superconducting Phase and Anisotropic Transport in a van der Waals Layered Candidate NbIrTe4 under Pressure

The unique electronic structure and crystal structure driven by external pressure in transition metal tellurides (TMTs) can host unconventional quantum states. Here, the discovery of pressure-induced phase transition at ≈2 GPa, and dome-shaped superconducting phase emerged in van der Waals layered NbIrTe4 is reported. The highest critical temperature (Tc ) is ≈5.8 K at pressure of ≈16 GPa, where the interlayered Te-Te covalent bonds form simultaneously derived from the synchrotron diffraction data, indicating the hosting structure of superconducting evolved from low-pressure two-dimensional (2D) phase to three-dimensional (3D) structure with pressure higher than 30 GPa. Strikingly, the authors have found an anisotropic transport in the vicinity of the superconducting state, suggesting the emergence of a "stripe"-like phase. The dome-shaped superconducting phase and anisotropic transport are possibly due to the spatial modulation of interlayer Josephson coupling .

Adapting a continuous flow cryostat and a plate DAC to do high pressure Raman experiments at low temperatures

We present a method for modifying a continuous flow cryostat and a steel plate DAC (Diamond Anvil Cell) to perform high pressure micro-Raman experiments at low temperatures. Despite using a steel DAC with a lower specific heat capacity (∼335 J/kg K), this setup can routinely perform high pressure (∼10 GPa) measurements at temperatures as low as 26 K. This adaptation is appropriate for varying the temperature of the sample while keeping it at a constant pressure. We determined that the temperature variation across the sample chamber is about 1 K using both direct temperature measurements and finite element analysis of the heat transport across the DAC. We present Raman spectroscopy results on elemental selenium at high pressures and low temperatures using our modified setup.

Anomalous enhancement of atomic vibration induced by electronic transition in 2H-MoTe2under compression

In this work, we explore the atomic vibration and local structure in 2H-MoTe₂by using high-pressure x-ray absorption fine structure spectroscopy up to ∼20 GPa. The discrepancy between the Mo-Te and Mo-Mo bond length in 2H-MoTe₂obtained from extended-XAFS and other techniques shows abnormal increase at 7.3 and 14.8 GPa, which is mainly due to the abrupt enhancement of vibration perpendicular to the bond direction.Ab initiocalculations are performed to study the electronic structure of 2H-MoTe₂up to 20 GPa and confirm a semiconductor to semimetal transition around 8 GPa and a Lifshitz transition around 14 GPa. We attribute the anomalous enhancement of vibration perpendicular to the bond direction to electronic transitions. We find the electronic transition induced enhancement of local vibration for the first time. Our finding offers a novel insight into the local atomic vibration and provides a new platform for understanding the relationship between the electronic transition and atomic vibration.

MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T′) molybdenum ditelluride (MoTe₂). The formation of ohmic contacts increases the charge carrier mobility of MoTe₂ field-effect transistor devices to 16.1 cm² V⁻¹s⁻¹ with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.

Metastable 1T'-phase group VIB transition metal dichalcogenide crystals

Metastable 1T'-phase transition metal dichalcogenides (1T'-TMDs) with semi-metallic natures have attracted increasing interest owing to their uniquely distorted structures and fascinating phase-dependent physicochemical properties. However, the synthesis of high-quality metastable 1T'-TMD crystals, especially for the group VIB TMDs, remains a challenge. Here, we report a general synthetic method for the large-scale preparation of metastable 1T'-phase group VIB TMDs, including WS₂, WSe₂, MoS₂, MoSe₂, WS_2xSe_2(1-x) and MoS_2xSe_2(1-x). We solve the crystal structures of 1T'-WS₂, -WSe₂, -MoS₂ and -MoSe₂ with single-crystal X-ray diffraction. The as-prepared 1T'-WS₂ exhibits thickness-dependent intrinsic superconductivity, showing critical transition temperatures of 8.6 K for the thickness of 90.1 nm and 5.7 K for the single layer, which we attribute to the high intrinsic carrier concentration and the semi-metallic nature of 1T'-WS₂. This synthesis method will allow a more systematic investigation of the intrinsic properties of metastable TMDs.

Colossal Density-Driven Resistance Response in the Negative Charge Transfer Insulator MnS_{2}

A reversible density driven insulator to metal to insulator transition in high-spin MnS_{2} is experimentally observed, leading with a colossal electrical resistance drop of 10^{8}  Ω by 12 GPa. Density functional theory simulations reveal the metallization to be unexpectedly driven by previously unoccupied S_{2}^{2-} σ_{3p}^{*} antibonding states crossing the Fermi level. This is a unique variant of the charge transfer insulator to metal transition for negative charge transfer insulators having anions with an unsaturated valence. By 36 GPa the emergence of the low-spin insulating arsenopyrite (P2_{1}/c) is confirmed, and the bulk metallicity is broken with the system returning to an insulative electronic state.

A New Superconducting 3R-WS2 Phase at High Pressure

High-pressure investigation has been shown to be of paramount significance for changing the conventional lattice or bringing fascinating properties, especially inducing superconducting phases. Here we studied the application of pressure to the recently synthesized 2M-WS₂ with the record T_c (8.8 K) among transition metal dichalcogenides (TMDs) at ambient pressure by electrical resistance investigations, synchrotron X-ray studies, and theoretical calculations. T_c in the initial 2M-WS₂ dropped from the maximum to become undetected, accompanied by a phase transition into a semiconductor, 3R-WS₂, at 15 GPa. The successive metallization and superconducting transitions in 3R-WS₂ were observed at 48.8 GPa with T_c ≈ 2.5 K. This is the first experimental case in which superconductivity has been realized in the 3R phase among TMDs. We propose that the degradation of superconductivity in 2M-WS₂ and the reemergence of superconductivity in 3R-WS₂ are mainly attributable to changes in the density of states near the Fermi surface driven by the interlayer coupling.

P-type doping in 2M-WS2 for a complete phase diagram

2M-WS₂ as a new phase of transition metal dichalcogenides possesses many novel physical properties, such as superconductivity and topological surface states. The effect of n-type doping on the superconductivity of this material has been studied. However, p-type doping has not been studied, because it is difficult to implement p-type doping in metastable 2M-WS₂. In this paper, p-type doping was achieved in 2M-WS₂ for the first time by using Mo. With the increase of the Mo content, the carrier concentration rises slightly from 1.42 × 10²¹ cm^-1 to 1.56 × 10²¹ cm^-1. Meanwhile, the superconducting transition temperature decreases monotonously with the increase of Mo doping and reaches a minimum value of 4.37 K at the doping limit of x = 0.6 in W_1-xMo_xS₂. Combining the data of n-type doped 2M-WS₂ from our previous research, we summarize the carrier concentration and superconducting transition temperature in a phase diagram, which shows a typical dome-like shape. These results uncover the relationship between the carrier concentration and electronic state of 2M-WS₂.

cm2-Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control

Owing to the small energy differences between its polymorphs, MoTe₂ can access a full spectrum of electronic states from the 2H semiconducting state to the 1T' semimetallic state and from the T_d Weyl semimetallic state to the superconducting state in the 1T' and T_d phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum spin Hall effect and topological superconductivity. Careful studies of MoTe₂ and its potential applications require large-area MoTe₂ thin films with high crystallinity and thickness control. Here, we present cm²-scale synthesis of 2H-MoTe₂ thin films with layer control and large grains that span several microns. Layer control is achieved by controlling the initial thickness of the precursor MoO_x thin films, which are deposited on sapphire substrates by atomic layer deposition and subsequently tellurized. Despite the van der Waals epitaxy, the precursor-substrate interface is found to critically determine the uniformity in thickness and grain size of the resulting MoTe₂ films: MoTe₂ grown on sapphire show uniform films while MoTe₂ grown on amorphous SiO₂ substrates form islands. This synthesis strategy decouples the layer control from the variabilities of growth conditions for robust growth results and is applicable to growing other transition-metal dichalcogenides with layer control.

Anisotropic Full-Gap Superconductivity in 2M-WS2 Topological Metal with Intrinsic Proximity Effect

Layered 2M-WS₂ is recently observed to show Majorana bound states in vortices, but its superconducting pairing mechanism remains unknown, hindering the understanding of its topological superconducting nature. Using the ab initio Migdal-Eliashberg theory and electron-phonon Wannier interpolation, we demonstrate that both bulk and bilayer 2M-WS₂ have a single anisotropic full-gap superconducting order of s-wave symmetry. We successfully reproduce the experimental superconducting critical temperature for the bulk and predict the bilayer 2M-WS₂, a two-dimensional (2D) Z₂ topological metal with nontrivial edge states right at the Fermi energy, to superconduct at 7 K, much higher than that in most 2D transition metal dichalcogenides (TMDs). A distinct proximity-enhanced surface superconductivity is further revealed by simulating quasiparticle density of states. This work unveils a universal electron-phonon full-gap pairing in 2M group VI TMDs and suggests a strong intrinsic surface-bulk proximity effect for 2M-WS₂, paving the way to engineering topological superconductivity in TMD-based nanoscale devices.

Superior electrochemical performance of layered WTe2 as potassium-ion battery electrode

Potassium-ion batteries or KIBs are prominent candidates among research involving post lithium-ion batteries due to abundant availability, low-cost, and low standard reduction potential of potassium metal. Although some chemistry correlation with other monovalent alkali metal-ion batteries may exist, research on KIB chemistry is still in its infancy. A relevant research aspect of KIB is the development of a stable anode material that can efficiently cycle the large K⁺ ions in its crystal structure within the 0 to 3 V potential window range; providing reasonable charge capacity and high reversibility. To this end, transition metal dichalcogenides or TMDs are promising electrode materials because of their favorable electrochemical properties. In this work, we study electrochemical performance of tungsten ditelluride (WTe₂) TMD as working electrode in a KIB half-cell. Results show that WTe₂, a telluride-based TMD, has high first cycle specific charge capacity-with up to 3.3 K⁺ stored per WTe₂ molecule (at least 4 times that of WS₂ electrode)-stable capacity of 143 mAh g^-1 at 10th cycle number-outperforming WS₂ (66 mAh g^-1) and graphite (95 mAh g^-1)-good reversibility, reasonable cycling stability, and low charge transfer resistance.

Inversion-Protected Higher-Order Topological Superconductivity in Monolayer WTe_{2}

Monolayer WTe_{2}, a centrosymmetric transition metal dichacogenide, has recently been established as a quantum spin Hall insulator and found superconducting upon gating. Here we study the pairing symmetry and topological nature of superconducting WTe_{2} with a microscopic model at mean-field level. Surprisingly, we find that the spin-triplet phases in our phase diagram all host Majorana modes localized on two opposite corners. Even when the conventional pairing is favored, we find that an intermediate in-plane magnetic field exceeding the Pauli limit stabilizes an unconventional equal-spin pairing aligning with the field, which also hosts Majorana corner modes. Motivated by our findings, we obtain a recipe for two-dimensional superconductors featuring "higher-order topology" from the boundary perspective. Generally, a superconducting inversion-symmetric quantum spin Hall material whose normal-state Fermi surface is away from high-symmetry points, such as gated monolayer WTe_{2}, hosts Majorana corner modes if the superconductivity is parity-odd. We further point out that this higher-order phase is an inversion-protected topological crystalline superconductor and study the bulk-boundary correspondence. Finally, we discuss possible experiments for probing the Majorana corner modes. Our findings suggest superconducting monolayer WTe_{2} is a playground for higher-order topological superconductivity and possibly the first material realization for inversion-protected Majorana corner modes without utilizing proximity effect.

Vortex End Majorana Zero Modes in Superconducting Dirac and Weyl Semimetals

Time-reversal invariant Dirac and Weyl semimetals in three dimensions (3D) can host open Fermi arcs and spin-momentum locking Fermi loops on the surfaces. We find that when they become superconducting with s-wave pairing and the doping is lower than a critical level, straight π-flux vortex lines terminating at surfaces with Fermi arcs or spin-momentum locking Fermi loops can realize 1D topological superconductivity and harbor Majorana zero modes at their ends. Remarkably, we find that the vortex-generation-associated Zeeman field can open (when the surfaces have only Fermi arcs) or enhance the topological gap protecting Majorana zero modes, which is contrary to the situation in superconducting topological insulators. By studying the tilting effect of bulk Dirac and Weyl cones, we further find that type-I Dirac and Weyl semimetals in general have a much broader topological regime than type-II ones. Our findings build up a connection between time-reversal invariant Dirac and Weyl semimetals and Majorana zero modes in vortices.

One-Dimensional Edge Transport in Few-Layer WTe2

WTe2 is a layered transitional-metal dichalcogenide (TMD) with a number of intriguing topological properties. Recently, WTe2 has been predicted to be a higher-order topological insulator (HOTI) with topologically protected hinge states along the edges. The gapless nature of WTe2 complicates the observation of one-dimensional (1D) topological states in transport due to their small contribution relative to the bulk. Here, we study the behavior of the Josephson effect in magnetic field to distinguish edge from bulk transport. The Josephson effect in few-layer WTe2 reveals 1D states residing on the edges and steps. Moreover, our data demonstrates a combination of Josephson transport properties observed solely in another HOTI-bismuth, including Josephson transport over micrometer distances, extreme robustness in a magnetic field, and nonsinusoidal current-phase relation (CPR). Our observations strongly suggest the topological origin of the 1D states and that few-layer WTe2 is a HOTI.

Direct synthesis of metastable phases of 2D transition metal dichalcogenides

The different polymorphic phases of transition metal dichalcogenides (TMDs) have attracted enormous interest in the last decade. The metastable metallic and small band gap phases of group VI TMDs displayed leading performance for electrocatalytic hydrogen evolution, high volumetric capacitance and some of them exhibit large gap quantum spin Hall (QSH) insulating behaviour. Metastable 1T(1T') phases require higher formation energy, as compared to the thermodynamically stable 2H phase, thus in standard chemical vapour deposition and vapour transport processes the materials normally grow in the 2H phases. Only destabilization of their 2H phase via external means, such as charge transfer or high electric field, allows the conversion of the crystal structure into the 1T(1T') phase. Bottom-up synthesis of materials in the 1T(1T') phases in measurable quantities would broaden their prospective applications and practical utilization. There is an emerging evidence that some of these 1T(1T') phases can be directly synthesized via bottom-up vapour- and liquid-phase methods. This review will provide an overview of the synthesis strategies which have been designed to achieve the crystal phase control in TMDs, and the chemical mechanisms that can drive the synthesis of metastable phases. We will provide a critical comparison between growth pathways in vapour- and liquid-phase synthesis techniques. Morphological and chemical characteristics of synthesized materials will be described along with their ability to act as electrocatalysts for the hydrogen evolution reaction from water. Phase stability and reversibility will be discussed and new potential applications will be introduced. This review aims at providing insights into the fundamental understanding of the favourable synthetic conditions for the stabilization of metastable TMD crystals and at stimulating future advancements in the field of large-scale synthesis of materials with crystal phase control.

Topological Semimetal Nanostructures: From Properties to Topotronics

Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating, provide ideal platforms to detect and manipulate the topological quantum states. Exotic physical properties originating from these topological states endow topological semimetals attractive for future topological electronics (topotronics). For example, the linear energy dispersion relation is promising for broadband infrared photodetectors, the spin-momentum locking nature of topological surface states is valuable for spintronics, and the topological superconductivity is highly desirable for fault-tolerant qubits. For real-life applications, topological semimetals in the form of nanostructures are necessary in terms of convenient fabrication and integration. Here, we review the recent progresses in topological semimetal nanostructures and start with the quantum transport properties. Then topological semimetal-based electronic devices are introduced. Finally, we discuss several important aspects that should receive great effort in the future, including controllable synthesis, manipulation of quantum states, topological field effect transistors, spintronic applications, and topological quantum computation.

Surface superconductivity in the type II Weyl semimetal TaIrTe4

The search for unconventional superconductivity in Weyl semimetal materials is currently an exciting pursuit, since such superconducting phases could potentially be topologically non-trivial and host exotic Majorana modes. The layered material TaIrTe4 is a newly predicted time-reversal invariant type II Weyl semimetal with the minimum number of Weyl points. Here, we report the discovery of surface superconductivity in Weyl semimetal TaIrTe4. Our scanning tunneling microscopy/spectroscopy (STM/STS) visualizes Fermi arc surface states of TaIrTe4 that are consistent with the previous angle-resolved photoemission spectroscopy results. By a systematic study based on STS at ultralow temperature, we observe uniform superconducting gaps on the sample surface. The superconductivity is further confirmed by electrical transport measurements at ultralow temperature, with an onset transition temperature (T c) up to 1.54 K being observed. The normalized upper critical field h*(T/T c) behavior and the stability of the superconductivity against the ferromagnet indicate that the discovered superconductivity is unconventional with the p-wave pairing. The systematic STS, and thickness- and angular-dependent transport measurements reveal that the detected superconductivity is quasi-1D and occurs in the surface states. The discovery of the surface superconductivity in TaIrTe4 provides a new novel platform to explore topological superconductivity and Majorana modes.

Surface and interfacial study of atomic layer deposited Al2O3 on MoTe2 and WTe2

The atomic layer deposition (ALD) of high-k dielectrics could build an efficient barrier against moisture and O₂ adsorption. Such a barrier is highly needed for MoTe₂ and WTe₂ transition metal dichalcogenides because of the poor structural stability and the fast oxidization in ambient air. In situ x-ray photoelectron spectroscopy and ex situ atomic force microscopy and scanning transmission electron microscopy were employed to report a comparative study between the growth of Al₂O₃ on MoTe₂ and WTe₂ by means of traditional thermal ALD and plasma-enhanced ALD (PEALD). Similar to what has been observed on other 2D materials such as MoS₂ and Graphene, the thermal ALD results in an islanding growth of Al₂O₃ on MoTe₂ due to the dearth of dangling bonds, whereas, a uniform coverage of Al₂O₃ on WTe₂ is observed and likely contributed to the high concentration of intrinsic structural defects. The PEALD behavior is consistent between MoTe₂ and WTe₂ providing a conformal and linear growth rate (∼0.08 nm/cycle), which correlates with the creation of Te-O and metal-O nucleation sites. However, a thin layer of interfacial Mo or W oxides gradually forms, resulting from the plasma-induced damage in the topmost (1-2) layers. Attempts to enhance the Al₂O₃/MoTe₂ interfacial quality by physically evaporating an Al₂O₃ seed layer are investigated as well. However, the evaporated Al₂O₃ process causes thermal damage on MoTe₂, necessitating a more 'gentle' ALD technique for the surface passivation.

Prediction of a novel robust superconducting state in TaS2 under high pressure

A novel superconducting I4/mmm phase has been predicted in TaS₂ under high pressure, illustrating an unusual superconductor–metal–superconductor transition.

Tip-induced superconductivity coexisting with preserved topological properties in line-nodal semimetal ZrSiS

ZrSiS was recently shown to be a new material with topologically non-trivial band structure that exhibits multiple Dirac nodes and a robust linear band dispersion up to an unusually high energy of 2 eV. Such a robust linear dispersion makes the topological properties of ZrSiS insensitive to perturbations like carrier doping or lattice distortion. Here, we show that a novel superconducting phase with a remarkably high [Formula: see text] of 7.5 K can be induced in single crystals of ZrSiS by a non-superconducting metallic tip of Ag. From first-principles calculations, we show that the observed superconducting phase might originate from a dramatic enhancement of density of states due to the presence of a metallic tip on ZrSiS. Our calculations also show that the emerging tip-induced superconducting phase co-exists with the well preserved topological properties of ZrSiS.

Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistance under strain

Strain describes the deformation of a material as a result of applied stress. It has been widely employed to probe transport properties of materials, ranging from semiconductors to correlated materials. In order to understand, and eventually control, transport behavior under strain, it is important to quantify the effects of strain on the electronic bandstructure, carrier density, and mobility. Here, we demonstrate that much information can be obtained by exploring magnetoelastoresistance (MER), which refers to magnetic field-driven changes of the elastoresistance. We use this powerful approach to study the combined effect of strain and magnetic fields on the semimetallic transition metal dichalcogenide [Formula: see text] We discover that WTe₂ shows a large and temperature-nonmonotonic elastoresistance, driven by uniaxial stress, that can be tuned by magnetic field. Using first-principle and analytical low-energy model calculations, we provide a semiquantitative understanding of our experimental observations. We show that in [Formula: see text], the strain-induced change of the carrier density dominates the observed elastoresistance. In addition, the change of the mobilities can be directly accessed by using MER. Our analysis also reveals the importance of a heavy-hole band near the Fermi level on the elastoresistance at intermediate temperatures. Systematic understanding of strain effects in single crystals of correlated materials is important for future applications, such as strain tuning of bulk phases and fabrication of devices controlled by strain.

Remarkable electronic and optical anisotropy of layered 1T'-WTe2 2D materials

Anisotropic 2D materials exhibit novel optical, electrical and thermoelectric properties that open possibilities for a great variety of angle-dependent devices. Recently, quantitative research on 1T'-WTe2 has been reported, revealing its fascinating physical properties such as non-saturating magnetoresistance, highly anisotropic crystalline structure and anisotropic optical/electrical response. Especially for its anisotropic properties, surging research interest devoted solely to understanding its structural and optical properties has been undertaken. Here we report quantitative, comprehensive work on the highly anisotropic, optical, electrical and optoelectronic properties of few-layer 1T'-WTe2 by azimuth-dependent reflectance difference microscopy, DC conductance measurements, as well as polarization-resolved and wavelength-dependent optoelectrical measurements. The electrical conductance anisotropic ratio is found to ≈103 for a thin 1T'-WTe2 film, while the optoelectronic anisotropic ratio is around 300 for this material. The polarization dependence of the photo-response is ascribed to the unique anisotropic in-plane crystal structure, consistent with the optical absorption anisotropy results. In general, 1T'-WTe2, with its highly anisotropic electrical and photoresponsivity reported here, demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways for applications of 2D materials for light polarization detection.

Pressure effects on iron-based superconductor CaFe0.88Co0.12AsF

Systematic measurements of electrical resistivity and Hall coefficient under high pressure were performed on CaFe_0.88Co_0.12AsF single crystal samples. The superconductivity is suppressed quickly by pressure and can not be detected down to 2 K at above 12.7 GPa, while the magnitude of the Hall coefficient [Formula: see text] shows a very weak pressure and temperature dependence. A comprehensive analysis considering the pressure dependence of [Formula: see text], [Formula: see text], residual resistivity ratio, and the Fermi-liquid term of the resistivity indicates that the electron correlation is an important factor in superconductivity of iron-based superconductors.

Synthesis of WTe2 Nanowires with Increased Electron Scattering

Tungsten ditelluride (WTe₂) has many interesting properties such as its extremely large nonsaturating magnetoresistance and quantum spin Hall state in the monolayer limit. The anisotropic crystal structure of WTe₂ can allow for isolation of particular crystal directions to study the predicted Weyl states or crystal-symmetry-dependent magnetoresistance when studied at limited dimensions. In particular, the recent demonstration of superconductivity in WTe₂ monolayer suggests that realizing nanowire geometry for WTe₂ may be important to investigate potential Majorana zero modes predicted in one-dimensional topological superconductors. In this work, we demonstrate a large-yield, low-temperature synthesis of WTe₂ nanowires, an approximate one-dimensional system, by converting WO₃ nanowires via tellurization. The nanowires are single crystalline and have a higher resistivity than WTe₂ exfoliated flakes with similar thickness. The increased resistivity is attributed to increased scattering from imperfect surfaces and higher surface-to-volume ratios of the WTe₂ nanowires. We demonstrate that the synthesis method is generalizable to other transition-metal dichalcogenides, laying the foundation for further study of this class of materials in the one-dimensional limit.

Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2

Since the discovery of extremely large nonsaturating magnetoresistance (MR) in WTe₂, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large nonsaturating MR through in situ tuning of the magneto-transport properties in thin WTe₂ film. With an electrostatic doping approach, we observed a nonmonotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe₂ film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature-dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the nonmagnetic materials with electron-hole pockets.