Substrate-induced bandgap opening in epitaxial graphene

Impact of valley degeneracy on the thermoelectric properties of zig-zag graphene nanoribbons with staggered sublattice potentials and transverse electric fields

This study investigates the band inversion of flat bands in zig-zag graphene nanoribbons (ZGNRs) using a tight-binding model. The band inversion results from symmetry breaking in the transverse direction, achievable through deposition on specific substrates such as separated silicon carbide or hexagonal boron nitride sheets. Upon band inversion, ZGNRs exhibit electronic structures characterized by valley degeneracy and band gap properties, which can be modulated by transverse electric fields. To explore the impact of this level degeneracy on thermoelectric properties, we employ Green's function techniques to calculate thermoelectric quantities in ZGNR segments with staggered sublattice potentials and transverse electric fields. Two carrier transport scenarios are considered: the chemical potential is positioned above and below the highest occupied molecular orbital. We analyze thermionic-assisted transport (TAT) and direct ballistic transport (DBT). Level degeneracy enhances the electric power factors of ZGNRs by increasing electrical conductance, while the Seebeck coefficient remains robust in the TAT scenario. Conversely, in DBT, the enhancement of the power factor primarily stems from improvements in the Seebeck coefficient at elevated temperatures.

Signature of Correlated Insulator in Electric Field Controlled Superlattice

On a two-dimensional crystal, a "superlattice" with nanometer-scale periodicity can be imposed to tune the Bloch electron spectrum, enabling novel physical properties inaccessible in the original crystal. While creating 2D superlattices by means of nanopatterned electric gates has been studied for band structure engineering in recent years, evidence of electron correlations─which drive many problems at the forefront of physics research─remains to be uncovered. In this work, we demonstrate signatures of a correlated insulator phase in Bernal-stacked bilayer graphene modulated by a gate-defined superlattice potential, manifested as resistance peaks centered at integer multiples of single electron per superlattice unit cell carrier densities. The observation is consistent with the formation of a stack of flat low-energy bands due to the superlattice potential combined with inversion symmetry breaking. Our work paves the way to custom-designed superlattices for studying band structure engineering and strongly correlated electrons in 2D materials.

Electronic properties of pristine and doped graphitic germanium carbide nanomeshes

Graphitic germanium carbide (g-GeC) is a novel material that has recently aroused much interest. Porous g-GeC can be fabricated by forming a lattice of pores in pristine g-GeC. In this work, we systematically investigate the influence of creating pores within pristine g-GeC. The pores are passivated with hydrogen, nitrogen, and oxygen, with four supercell sizes. The electronic properties are calculated using the density functional theory (DFT) formalism, which revealed that hydrogen-passivated systems have bandgaps ranging from 1.80 eV to 1.93 eV. The corresponding ranges for the nitrogen- and oxygen-passivated systems are 1.21 eV to 1.58 eV, and 1.18 eV to 1.45 eV, respectively. The bandgaps are always smaller than that of the pristine g-GeC system, and they approach the pristine value for larger supercell sizes. The studied systems have charge-trapping clusters of states located above/below the valence/conduction bands, partially localized at the pore-edge atoms. Additionally, we explore the chelation doping of the N-passivated GeC nanomesh using transition metal (Ni, Pd, Pt) three-atom clusters. Interestingly, the doped systems are dilute magnetic semiconductors. The studied systems exhibit electronic properties that may be useful for sensing and spintronics.

Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC

Epitaxial bilayer graphene, grown by chemical vapor deposition on SiC substrates without silicon sublimation, is crucial material for graphene field effect transistors (GFETs). Rigorous characterization methods, such as atomic force microscopy and Raman spectroscopy, confirm the exceptional quality of this graphene. Post-nanofabrication, extensive evaluation of DC and high-frequency properties enable the extraction of critical parameters such as the current gain (fmax) and cut-off frequency (ft) of hundred transistors. The Raman spectra analysis provides insights into material property, which correlate with Hall mobilities, carrier densities, contact resistance and sheet resistance and highlights graphene's intrinsic properties. The GFETs' performance displays dispersion, as confirmed through the characterization of multiple transistors. Since the Raman analysis shows relatively homogeneous surface, the variation in Hall mobility, carrier densities and contact resistance cross the wafer suggest that the dispersion of GFET transistor's performance could be related to the process of fabrication. Such insights are especially critical in integrated circuits, where consistent transistor performance is vital due to the presence of circuit elements like inductance, capacitance and coplanar waveguides often distributed across the same wafer.

Analogous electronic states in graphene and planer metallic quantum dots

Graphene nanostructures offer wide range of applications due to their distinguished and tunable electronic properties. Recently, atomic and molecular graphene were modeled following simple free-electron scattering by periodic muffin tin potential leading to remarkable agreement with density functional theory. Here we extend the analogy of the π -electronic structures and quantum effects between atomic graphene quantum dots (QDs) and homogeneous planer metallic counterparts of similar size and shape. Specifically, we show that at high binding energies, below the M ¯ -point gap, graphene QDs enclose confined states and standing wave quasiparticle interference patterns analogous to those reported on coinage metal surfaces for nanoscale confining structures such as vacancy islands and quantum corrals. These confined and quantum corral-like states in graphene QDs can be resolved in tomography experiments using angle-resolved photoemission spectroscopy. Likewise, the shape of near-Fermi frontier orbitals in graphene quantum dots can be reproduced from electron confinement within homogeneous metal QDs of identical size and shape. Furthermore, confined states analogous to those found in metallic quantum stadiums can be realized in coupled QDs of graphene for reduced separation. The present study offer a simple fundamental understanding of graphene electronic structures and also open the way towards efficient modeling of novel graphene-based nanostructures.

Design, development, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC

A versatile graphene epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) in diverse growth environments ranging from high vacuum to atmospheric argon pressure. Radio-frequency induction enables heating capabilities up to 2000 °C, with controlled heating ramp rates achievable up to 200 °C/s. The details of critical design aspects and temperature characteristics of the GrapE system are discussed. The GrapE system, being automated, has enabled the growth of high-quality EG monolayers and turbostratic EG on SiC using diverse methodologies, such as confinement-controlled sublimation (CCS), open configuration, polymer-assisted CCS, and rapid thermal annealing. This showcases the versatility of the GrapE system in EG growth. Comprehensive characterizations involving atomic force microscopy, Raman spectroscopy, and low-energy electron diffraction techniques were employed to validate the quality of the produced EG.

Dirac Cones and Room Temperature Polariton Lasing Evidenced in an Organic Honeycomb Lattice

Artificial 1D and 2D lattices have emerged as a powerful platform for the emulation of lattice Hamiltonians, the fundamental study of collective many-body effects, and phenomena arising from non-trivial topology. Exciton-polaritons, bosonic part-light and part-matter quasiparticles, combine pronounced nonlinearities with the possibility of on-chip implementation. In this context, organic semiconductors embedded in microcavities have proven to be versatile candidates to study nonlinear many-body physics and bosonic condensation, and in contrast to most inorganic systems, they allow the use at ambient conditions since they host ultra-stable Frenkel excitons. A well-controlled, high-quality optical lattice is implemented that accommodates light-matter quasiparticles. The realized polariton graphene presents with excellent cavity quality factors, showing distinct signatures of Dirac cone and flatband dispersions as well as polariton lasing at room temperature. This is realized by filling coupled dielectric microcavities with the fluorescent protein mCherry. The emergence of a coherent polariton condensate at ambient conditions are demonstrated, taking advantage of coupling conditions as precise and controllable as in state-of-the-art inorganic semiconductor-based systems, without the limitations of e.g. lattice matching in epitaxial growth. This progress allows straightforward extension to more complex systems, such as the study of topological phenomena in 2D lattices including topological lasers and non-Hermitian optics.

Ultrafast creation of a light-induced semimetallic state in strongly excited 1T-TiSe2

Screening, a ubiquitous phenomenon associated with the shielding of electric fields by surrounding charges, has been widely adopted as a means to modify a material's properties. While most studies have relied on static changes of screening through doping or gating thus far, here we demonstrate that screening can also drive the onset of distinct quantum states on the ultrafast timescale. By using time- and angle-resolved photoemission spectroscopy, we show that intense optical excitation can drive 1T-TiSe2, a prototypical charge density wave material, almost instantly from a gapped into a semimetallic state. By systematically comparing changes in band structure over time and excitation strength with theoretical calculations, we find that the appearance of this state is likely caused by a dramatic reduction of the screening length. In summary, this work showcases how optical excitation enables the screening-driven design of a nonequilibrium semimetallic phase in TiSe2, possibly providing a general pathway into highly screened phases in other strongly correlated materials.

Enhancing the energetic and magnetic stability of atomic hydrogen chemisorbed on graphene using (non)compensated B-N pairs

In this pioneering study for identifying atomic scale magnetic moment, a single hydrogen atom chemisorbed on pristine graphene exhibits distinct spin polarization. Using first-principles calculations and analyses, we demonstrate that the binding between a H adsorbate and a C substrate is substantially enhanced via compensated B-N pairs embedded into graphene. Surprisingly, the interaction can be further enhanced via non-compensated B-N pair doping. Our established prototype of orbital intercoupling between H 1s and hybridized pz of gapped band edges gives an insight into the enhancing mechanism. For compensated B-N doping, the conduction band minimum (CBM) is pushed upward, which induces stronger interaction between the H 1s and hybridized pz orbitals of the CBM. For non-compensated B-N doping, the orbital interaction occurs between H 1s and hybridized pz orbitals of valence band maximum, thus further lowering the resulting bonding energy due to the enlarged gap. This significantly enhanced interaction between H and C atoms agrees well with the results of charge localization at the gapped band edges. More importantly, the corresponding magnetic moments can be well maintained or even enhanced in both doping; here, one more H atom is needed for non-compensated doping, where its electron occupies the empty CBM. Our findings might provide an effective and practical way to enhance the energetic and magnetic stability of atomic scale magnetic moment on graphene and extensively expand the conception of non-compensated doping.

Crossed Andreev reflection in normal-superconductor-normal junction based on Kekulé-Y patterned graphene

We theoretically study the crossed Andreev reflection (CAR) of the normal metal-superconductor-normal metal (NSN) heterojunction based on Kekulé-Y patterned graphene with two doping types, i.e.nSnandnSpconfigurations. It is found that the enhanced CAR is more likely to occur in thenSpjunction rather than thenSnjunction. To be concrete, the almost perfect CAR occurs in a large range of incident angle in the single Dirac cone phase when the incident energy is inside the gap of the nonlinear band. Furthermore, the roles of the length of superconductor and pseudospin-valley coupling on conductance are also evaluated.

Flat bands without twists: periodic holey graphene

Holey Graphene(HG) is a widely used graphene material for the synthesis of high-purity and highly crystalline materials. The electronic properties of a periodic distribution of lattice holes are explored here, demonstrating the emergence of flat bands. It is established that such flat bands arise as a consequence of an induced sublattice site imbalance, i.e. by having more sites in one of the graphene's bipartite sublattice than in the other. This is equivalent to the breaking of a path-exchange symmetry. By further breaking the inversion symmetry, gaps and a nonzero Berry curvature are induced, leading to topological bands. In particular, the folding of the Dirac cones from the hexagonal Brillouin zone (BZ) to the holey superlattice rectangular BZ of HG, with sizes proportional to an integerntimes the graphene's lattice parameter, leads to a periodicity in the gap formation such thatn≡0(mod 3). A low-energy hamiltonian for the three central bands is also obtained revealing that the system behaves as an effectiveα-T3graphene material. Therefore, a simple protocol is presented here that allows for obtaining flat bands at will. Such bands are known to increase electron-electron correlation effects. Therefore, the present work provides an alternative system that is much easier to build than twisted systems, allowing for the production of flat bands and potentially highly correlated quantum phases.

Spatial quasi-bound states of Dirac electrons in graphene monolayer

Our study investigated the emergence of spatial quasi-bound states (QBSs) in graphene monolayers induced by rectangular potential barriers. By solving the time-independent Dirac equation and using the transfer matrix formalism, we calculated the resonance energies and identify the QBSs based on probability density functions (PDF). We analyzed two types of structures: single and double barriers, and we find that the QBSs are located within the barrier region, at energies higher than the single barrier. Additionally, we observe QBSs in the double barrier and their position depends on the distance and width of the well between the two barriers. The width and height of the barrier significantly impact the QBSs while the well width influences the resonance energy levels of the QBSs in the double barrier. Interestingly, the QBSs can be manipulated in the graphene system, offering potential for optoelectronic devices. Finally, our results demonstrated that the spatial localization of these states is counter-intuitive and holds great promise for future research in optolectronic devices.

Giant and Controllable Valley Currents in Graphene by Double Pumped THz Light

The field of valleytronics considers the creation and manipulation of "valley states", charge excitations characterized by a particular value of the crystal momentum in the Brillouin zone. Here we show, using the example of minimally gapped (≤40 meV) graphene, that there exist lightforms that create almost perfect valley contrasting current states (up to ∼80% valley purity) in the absence of a valley contrasting charge excitation. These "momentum streaked" THz waveforms act by deforming the excited state population in momentum space such that current flows at one valley yet is blocked at the conjugate valley. This approach both unlocks the potential of graphene as a materials platform for valleytronics, as gaps of 10-40 meV are robustly found in useful experimental contexts such as graphene/hBN systems, while simultaneously providing a tool toward ultrafast light control of valley currents in diverse minimally gapped matter, including many topological insulator systems.

Janus-Type Mixed-Valent Copper-Cyanido Honeycomb Layers

The synthesis of Janus-type layers, which possess front and back sides that consist of different structures, remains a major challenge in the field of two-dimensional materials. In this study, two Janus-type layered coordination polymers, namely, CuII(NEtH2)(NMe2H·H2O)CuI(CN)3 (1) and CuII(NMe2H)(NMe2H·H2O)CuI(CN)3 (2), were synthesized via a simple one-pot procedure using copper(II) nitrate and sodium cyanido in mixed solutions of dimethylamine and ethylamine. Uniquely, 1 and 2 were composed of cyanido-bridged neutral layers and exhibited a CuICuII mixed-valent state. Meanwhile, using a solution of pure dimethylamine for the synthesis yielded the monovalent three-dimensional framework (NMe2H2)[CuI2(CN)3] (3). Results indicated that the simultaneous use of two mixed amines gave rise to the controlled reduction of CuII ions during the reaction. In addition, each face of the layers was coordinated by different amines on the axial positions of the CuII sites, resulting in anisotropic Janus layers. Furthermore, the thermal expansion behavior of 2 was investigated, demonstrating that the neutral [CuICuII(CN)3] layer was relatively rigid compared with the analogous anionic [CuI2(CN)3]- layer.

Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ2 (A = Si, Ge; Z = P, As) monolayers

Recently, significant attention has been directed towards two-dimensional Janus materials owing to their unique structure and novel properties. In this work, we have introduced novel two-dimensional Janus monolayers, SZrAZ2 (A = Si, Ge; Z = P, As), through first principles. Our primary focus was the investigation of the controllable electronic properties exhibited by the Janus SZrAZ2 structures under the influence of strain and an external electric field. Our research findings indicate the dynamic and thermodynamic stability of Janus SZrAZ2 (A = Si, Ge; Z = P, As) monolayers. In the equilibrium state, these monolayers exhibit properties of an indirect band gap semiconductor. When subjected to biaxial strain and an external electric field, we observed that the dependency of SZrSiAs2 and SZrGeAs2 monolayers on an external electric field is very weak. Their electronic properties can only be modulated by applying biaxial strain. For SZrSiP2 and SZrGeP2 monolayers, their electronic properties can be modulated under biaxial strain and an external electric field, resulting in a transition from semiconducting to metallic behavior. Finally, we calculated the carrier mobility of these four structures and observed that the SZrGeAs2 monolayer exhibits a hole mobility of up to 597.52 cm2 s-1 V-1 in the x-direction, whereas the SZrSiP2 monolayer demonstrates an electron mobility of up to 479.30 cm2 s-1 V-1 in the y-direction. In the x-direction, the electron mobility of SZrSiAs2 and SZrGeP2 monolayers was measured to be 189.88 and 528.44 cm2 s-1 V-1, respectively. These values are greater than or equivalent to that of experimentally synthesized MoS2 (∼200 cm2 s-1 V-1). Our research lays the foundation for utilizing two-dimensional Janus materials in electronic devices.

Compression-induced hexa-to-tetra phase transition of confined germanene

Via molecular dynamics (MD) simulations we find the existence of the new allotrope of two-dimensional (2D) germanene, i.e. 2D tetra-germanene (tetra-Ge) which contains entirely tetragons. We compress 2D hexa-germanene (hexa-Ge) step by step over a broad density range at constant temperature and hexa-tetra Ge phase transition occurs. We find that the compression of hexa-Ge at 2000 K (not far above the melting point of hexa-Ge) leads to the formation of tetra-Ge with the highest quality. Atomic structure of the obtained tetra-Ge at 300 K is analyzed in details. Although fraction of tetragons in the tetra-Ge is very high (larger than 0.99), some defects are found in addition to the skew tetragons. Due to containing almost entirely tetragons, tetra-Ge may exhibit new behaviors unlike those of the hexa-Ge. Subsequent studies in this direction for 2D tetra-Ge. In addition, first-principles calculations under density functional theory confirm the existence of stable tetra-Ge.

Modification on Flower Defects and Electronic Properties of Epitaxial Graphene by Erbium

Manipulating the topological defects and electronic properties of graphene has been a subject of great interest. In this work, we have investigated the influence of Er predeposition on flower defects and electronic band structures of epitaxial graphene on SiC. It is shown that Er atoms grown on the SiC substrate actually work as an activator to induce flower defect formation with a density of 1.52 × 1012 cm-2 during the graphitization process when the Er coverage is 1.6 ML, about 5 times as much as that of pristine graphene. First-principles calculations demonstrate that Er greatly decreases the formation energy of the flower defect. We have discussed Er promoting effects on flower defect formation as well as its formation mechanism. Scanning tunneling microscopy (STM) and Raman and X-ray photoelectron spectroscopy (XPS) have been utilized to reveal the Er doping effect and its modification to electronic structures of graphene. N-doping enhancement and band gap opening can be observed by using angle-resolved photoemission spectroscopy (ARPES). With Er coverage increasing from 0 to 1.6 ML, the Dirac point energy decreases from -0.34 to -0.37 eV and the band gap gradually increases from 320 to 360 meV. The opening of the band gap is attributed to the synergistic effect of substitution doping of Er atoms and high-density flower defects.

Observation of a Folded Dirac Cone in Heavily Doped Graphene

Superlattice potentials imposed on graphene can alter its Dirac states, enabling the realization of various quantum phases. We report the experimental observation of a replica Dirac cone at the Brillouin zone center induced by a superlattice in heavily doped graphene with Gd intercalation using angle-resolved photoemission spectroscopy (ARPES). The replica Dirac cone arises from the (√3× √3)R30° superlattice formed by the intervalley coupling of two nonequivalent valleys (e.g., the Kekulé-like distortion phase), accompanied by a bandgap opening. According to the findings, the replica Dirac band in Gd-intercalated graphene disappears beyond a critical temperature of 30 K and can be suppressed by potassium adsorption. The modulation of the replica Dirac band is primarily attributable to the residual frozen gas, which can act as a source of intervalley scattering at temperatures below 30 K. Our results highlight the persistence of the hidden Kekulé-like phase within the heavily doped graphene, enriching our current understanding of its replica Dirac Fermions.

Layer-Dependent Interaction Effects in the Electronic Structure of Twisted Bilayer Graphene Devices

Near the magic angle, strong correlations drive many intriguing phases in twisted bilayer graphene (tBG) including unconventional superconductivity and chern insulation. Whether correlations can tune symmetry breaking phases in tBG at intermediate (≳ 2°) twist angles remains an open fundamental question. Here, using ARPES, we study the effects of many-body interactions and displacement field on the band structure of tBG devices at an intermediate (3°) twist angle. We observe a layer- and doping-dependent renormalization of bands at the K points that is qualitatively consistent with moiré models of the Hartree-Fock interaction. We provide evidence of correlation-enhanced inversion symmetry-breaking, manifested by gaps at the Dirac points that are tunable with doping. These results suggest that electronic interactions play a significant role in the physics of tBG even at intermediate twist angles and present a new pathway toward engineering band structure and symmetry-breaking phases in moiré heterostructures.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Achieving Boron-Carbon-Nitrogen Heterostructures by Collision Fusion of Carbon Nanotubes and Boron Nitride Nanotubes

Heterostructures may exhibit completely new physical properties that may be otherwise absent in their individual component materials. However, how to precisely grow or assemble desired complex heterostructures is still a significant challenge. In this work, the collision dynamics of a carbon nanotube and a boron nitride nanotube under different collision modes were investigated using the self-consistent-charge density-functional tight-binding molecular dynamics method. The energetic stability and electronic structures of the heterostructure after collision were calculated using the first-principles calculations. Five main collision outcomes are observed, that is, two nanotubes can (1) bounce back, (2) connect, (3) fuse into a defect-free BCN heteronanotube with a larger diameter, (4) form a heteronanoribbon of graphene and hexagonal boron nitride and (5) create serious damage after collision. It was found that both the BCN single-wall nanotube and the heteronanoribbon created by collision are the direct band-gap semiconductors with the band gaps of 0.808 eV and 0.544 eV, respectively. These results indicate that collision fusion is a viable method to create various complex heterostructures with new physical properties.

Localized magnetic moment induced by boron adatoms chemisorbed on graphene

Inducing local spin-polarization in pristine graphene is highly desirable and recent experiment shows that boron adatom chemical attachment to graphene exhibits local high spin state. Using hybrid exchange-correlation functional, we show that boron (B) monomer chemisorbed on the bridge site of graphene is energically favorable, and indeed induces a weak local spin-polarization ∼0.56μB. The localized magnetic moment can be attributed to the charge transfer from boron atom to graphene, resulting in local spin charge dominantly surrounding to the adsorbed B and neighboring carbon (C) atoms. We also surprisingly find that boron dimer can even much more stable upright anchor the same site of graphene, giving rise to sizable spin magnetic moment 2.00μB. Although the apparent spin state remains mainly contributed by Bpand Cporbitals as the case of boron monomer, the delicate and substantial charge transfer of theintra-dimerplays a fundamental role in producing such sizable local spin-polarization. We employed various van der Waals corrections to check and confirm the validity of appeared local spin-polarization. In terms of the almost identical simulated scanning tunneling microscope between boron monomer and dimer, we might tend to support the fact that boron dimer can also be chemisorbed on graphene with much larger and stable localized spin magnetic moment.

Chemical gradients on graphene via direct mechanochemical cleavage of atoms from chemically functionalized graphene surfaces

Manipulating the surface chemistry of graphene is critical to many applications that are achievable by chemical functionalization. Specifically, tailoring the spatial distribution of functional groups offers more opportunities to explore functionality using continuous changes in surface energy. To this end, careful consideration is required to demonstrate the chemical gradient on graphene surfaces, and it is necessary to develop a technique to pattern the spatial distribution of functional groups. Here, we demonstrate the tailoring of a chemical gradient through direct mechanochemical cleavage of atoms from chemically functionalized graphene surfaces via an atomic force microscope. Additionally, we define the surface characteristics of the fabricated sample by using lateral force microscopy revealing the materials' intrinsic properties at the nanoscale. Furthermore, we perform the cleaning process of the obtained lateral force images by using a machine learning method of truncated singular value decomposition. This work provides a useful technique for many applications utilizing continuous changes in the surface energy of graphene.

Strain-Driven Faceting of Graphene-Catalyst Interfaces

The interfacial interaction of 2D materials with the substrate leads to striking surface faceting affecting its electronic properties. Here, we quantitatively study the orientation-dependent facet topographies observed on the catalyst under graphene using electron backscatter diffraction and atomic force microscopy. The original flat catalyst surface transforms into two facets: a low-energy low-index surface, e.g. (111), and a vicinal (high-index) surface. The critical role of graphene strain, besides anisotropic interfacial energy, in forming the observed topographies is revealed by molecular simulations. These insights are applicable to other 2D/3D heterostructures.

Transverse Magnetic Surface Plasmons in Graphene Nanoribbon Qubits: The Influence of a VO2 Substrate

We study the influence of the phase-change material VO₂ on transverse magnetic (TM) surface plasmon (SP) modes in metallic arm-chair graphene nanoribbon (AGNR) qubits in the Lindhard approximation. We assess the effects of temperature as a dynamic knob for the transition from the insulating to the metallic phase on the TM SP modes in single-band (SB) and two-band (TB) transitions. We show that a VO₂ substrate leads to TM SP modes in both SB and TB transitions. In addition, we observe that the SP modes have a lower frequency than those for a substrate of constant permittivity. In addition, we study the influence of the substrate-induced band gap Δ' on SP modes in TB transitions for the insulating and metallic phases of VO₂.

Electronic Control of the Scholl Reaction: Selective Synthesis of Spiro vs Helical Nanographenes

Scholl oxidation has become an essential reaction in the bottom-up synthesis of molecular nanographenes. Herein, we describe a Scholl reaction controlled by the electronic effects on the starting substrate (1 a, b). Anthracene-based polyphenylenes lead to spironanographenes under Scholl conditions. In contrast, an electron-deficient anthracene substrate affords a helically arranged molecular nanographene formed by two orthogonal dibenzo[fg,ij]phenanthro-[9,10,1,2,3-pqrst]pentaphene (DBPP) moieties linked through an octafluoroanthracene core. Density Functional Theory (DFT) calculations predict that electronic effects control either the first formation of spirocycles and subsequent Scholl reaction to form spironanographene 2, or the expected dehydrogenation reaction leading solely to the helical nanographene 3. The crystal structures of four of the new spiro compounds (syn 2, syn 9, anti 9 and syn 10) were solved by single crystal X-ray diffraction. The photophysical properties of the new molecular nanographene 3 reveal a remarkable dual fluorescent emission.

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Epitaxial graphene on SiC is the most promising substrate for the next generation 2D electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the door to the use of all technological processes developed for silicon electronics. To obtain a suitable material for large scale applications, it is essential to achieve perfect control of size, quality, growth rate and thickness. Here we show that this control on epitaxial graphene can be achieved by exploiting the face-to-face annealing of SiC in ultra-high vacuum. With this method, Si atoms trapped in the narrow space between two SiC wafers at high temperatures contribute to the reduction of the Si sublimation rate, allowing to achieve smooth and virtually defect free single graphene layers. We analyse the products obtained on both on-axis and off-axis 4H-SiC substrates in a wide range of temperatures (1300 °C-1500 °C), determining the growth law with the help of x-ray photoelectron spectroscopy (XPS). Our epitaxial graphene on SiC has terrace widths up to 10μm (on-axis) and 500 nm (off-axis) as demonstrated by atomic force microscopy and scanning tunnelling microscopy, while XPS and Raman spectroscopy confirm high purity and crystalline quality.

Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral methods. By applying a comprehensive analysis approach, distinct interactions at the graphene-sapphire interface and local variations caused by the substrate topography are revealed. Regions near the sapphire step edges show tiny wrinkles with a height of about 0.2 nm, framed by delaminated graphene as identified by the typical Dirac cone of free graphene. In contrast, adsorption of CVD SLG on the hydroxyl-terminated α-Al₂O₃ (0001) terraces results in a superstructure with a periodicity of (2.66 ± 0.03) nm. Weak hydrogen bonds formed between the hydroxylated sapphire surface and the π-electron system of SLG result in a clean interface. The charge injection induces a band gap in the adsorbed graphene layer of about (73 ± 3) meV at the Dirac point. The good agreement with the predictions of a theoretical analysis underlines the potential of this hybrid system for emerging electronic applications.

Tafel-Kinetics-Controlled High-Speed Switching in a Electrochemical Graphene Field-Effect Transistor

Graphene field-effect transistors (FETs) have attracted tremendous attention owing to the single-atomic-layer thickness and high electron mobility for potential applications in next-generation electronics. With regards to switching methodology, the electric-field-induced metal-insulator transition offers a new strategy to produce a large on/off current ratio through reversible electrochemical hydrogenation of the graphene channels. Therefore, the performance of such electrochemical graphene FETs greatly relies on the kinetics of hydrogenation reaction. Here, we show that the switching time can be systemically controlled by the applied gate voltages and geometries of graphene channels. The turn-on and turn-off time display an exponential dependence on the gate voltages, manifesting the dominated Tafel-form kinetics of hydrogenation reaction in a two-dimensional limit. Moreover, the turn-off time is inversely proportional to the channel width but independent of the length, while the turn-on time relies on both the width and length, as well as the off-state gate voltage and duration. Our work improves the response time to the magnitude of tens of microseconds and advances the application of graphene-based electronic devices.

Strain effects in the electron orbital coupling and electric structure of graphene

Graphene is not only a very strong two-dimensional material, but is also able to sustain reversible tensile elastic strain larger than 20%, which yields an interesting possibility to regulate the properties of graphene by applied strain. We have investigated the strain effects in the electron orbital coupling and electric structure of graphene adopting the density functional theory. We found that the Fermi level of graphene is elevated by compressive strain and degraded by tensile strain. But uniaxial strain can give rise to the symmetry breaking of graphene and open the band gap. Furthermore, the tensile uniaxial strain is more beneficial to the band gap opening than the compressive uniaxial strain when the uniaxial strain is perpendicular to the C-C bond, but the compressive uniaxial strain is more than the tensile uniaxial strain when the uniaxial strain is parallel to the C-C bond. Second, the symmetry breaking of graphene resulting from uniaxial strain can be illustrated in that the uniaxial strain weakens the electron orbital coupling of graphene between p_x and p_y orbitals and brings about the splitting of the peak of the p_z orbital density of states (DOS) on the left side of the Fermi level. Finally, whether uniaxial or biaxial strain, the compressive strain widens the pseudogap of graphene and the tensile strain narrows it. This would be useful for greatly broadening its applications in nanoelectronics and optoelectronics.

Effects of Mono-Vacancies and Co-Vacancies of Nitrogen and Boron on the Energetics and Electronic Properties of Heterobilayer h-BN/graphene

A study is carried out which investigates the effects of the mono-vacancies of boron (VB) and nitrogen (VN) and the co-vacancies of nitrogen (N), and boron (B) on the energetics and the structural, electronic, and magnetic properties of an h-BN/graphene heterobilayer using first-principles calculations within the framework of the density functional theory (DFT). The heterobilayer is modelled using the periodic slab scheme. In the present case, a 4 × 4-(h-BN) monolayer is coupled to a 4 × 4-graphene monolayer, with a mismatch of 1.40%. In this coupling, the surface of interest is the 4 × 4-(h-BN) monolayer; the 4 × 4-graphene only represents the substrate that supports the 4 × 4-(h-BN) monolayer. From the calculations of the energy of formation of the 4 × 4-(h-BN)/4 × 4-graphene heterobilayer, with and without defects, it is established that, in both cases, the heterobilayers are energetically stable, from which it is inferred that these heterobilayers can be grown in the experiment. The formation of a mono-vacancy of boron (1 V_B), a mono-vacancy of nitrogen (1 V_N), and co-vacancies of boron and nitrogen (V_BN) induce, on the structural level: (a) for 1 V_B, a contraction n of the B-N bond lengths of ~2.46% and a slight change in the interfacial distance D (~0.096%) with respect to the heterobilayer free of defects (FD) are observed; (b) for 1 V_N, a slight contraction of the B-N of bond lengths of ~0.67% and an approach between the h-BN monolayer and the graphene of ~3.83% with respect to the FD heterobilayer are observed; (c) for V_BN, it can be seen that the N-N and B-B bond lengths (in the 1 V_B and 1 V_N regions, respectively) undergo an increase of ~2.00% and a decrease of ~3.83%, respectively. The calculations of the Löwdin charge for the FD heterobilayer and for those with defects (1 V_B, 1 V_N, and V_BN) show that the inclusion of this type of defect induces significant changes in the Löwdin charge redistribution of the neighboring atoms of VB and VN, causing chemically active regions that could favor the interaction of the heterobilayer with external atoms and/or molecules. On the basis of an analysis of the densities of states and the band structures, it is established that the heterobilayer with 1 V_B and V_BN take on a half-metallic and magnetic behavior. Due to all of these properties, the FD heterobilayer and those with 1 V_B, 1 V_N, and V_BN are candidates for possible adsorbent materials and possible materials that could be used for different spintronic applications.

Enhanced stark effect in Dirac materials

The Stark effect in confined geometries is sensitive to boundary conditions. The vanishing wave function required on the boundary of nanostructures described by the infinite-barrier Schrödinger equation means that such states are only weakly polarizable. In contrast, materials described by the Dirac equation are characterized by much less restrictive boundary conditions. Focusing on honeycomb-lattice armchair nanoribbons, we demonstrate an enhancement by more than an order of magnitude. This result follows from an exact Dirac polarizability valid for arbitrary mass, momentum and ribbon width. Moreover, an exact expression for the frequency-dependent dynamic polarizability has been derived. Our analytic Dirac results have been validated by comparison to numerical results from atomistic models.

RPA Plasmons in Graphene Nanoribbons: Influence of a VO2 Substrate

We study the effect of the phase-change material VO2 on plasmons in metallic arm-chair graphene nanoribbons (AGNRs) within the random-phase approximation (RPA) for intra- and inter-band transitions. We assess the influence of temperature as a knob for the transition from the insulating to the metallic phase of VO2 on localized and propagating plasmon modes. We show that AGNRs support localized and propagating plasmon modes and contrast them in the presence and absence of VO2 for intra-band (SB) transitions while neglecting the influence of a substrate-induced band gap. The presence of this gap results in propagating plasmon modes in two-band (TB) transitions. In addition, there is a critical band gap below and above which propagating modes have a linear negative or positive velocity. Increasing the band gap shifts the propagating and localized modes to higher frequencies. In addition, we show how the normalized Fermi velocity increases plasmon modes frequency.

Interaction of graphene with Aunclusters: a first-principles study

The interaction between Au_n(n= 1-6) clusters and graphene is studied using first-principles simulations, based on density functional theory. The computed binding energy between Au_nand graphene depends on the number of atoms in the cluster and lies between -0.6 eV and -1.7 eV, suggesting (weak) chemisorption of the clusters on graphene, rather than physisorption. Overall, the electronic properties, spin-orbit interaction and spin texture, as well as the transport properties of graphene strongly depend on the precise size of the Au_nclusters. Doping of graphene is predicted for clusters with an odd number of Au atoms, due to overlap between Ausand carbonp_zstates close to the Fermi level. On the other hand, there is no charge transfer between even size Au clusters and graphene, but a gap is formed at the Dirac cone, due to the breaking of the pseudo spin inversion symmetry of graphene's lattice. The adsorbed Au_nclusters induce spin-orbit interactions as well as spin and pseudo spin interactions in graphene, as indicated by the splitting of the electronic band structure. A hedgehog spin texture is also predicted for adsorbed clusters with an even number of Au atoms. Ballistic transport simulations are performed to study the influence of the adsorbed clusters on graphene's electronic transport properties. The influence of the cluster on the electron transmission across the structure depends on the mixing of the valence orbitals in the transport energy window. In the specific case of the Au₃/graphene system, the adsorbed clusters reduce the transmission and the conductance of graphene. The Au₃clusters act as 'scattering centers' for charge carriers, in agreement with recent experimental studies.

Electronic structure and interface contact of two-dimensional van der Waals boron phosphide/Ga2SSe heterostructures

In this work, we systematically examine the electronic features and contact types of van der Waals heterostructures (vdWHs) combining single-layer boron phosphide (BP) and Janus Ga2SSe using first-principles calculations. Owing to the out-of-plane symmetry being broken, the BP/Ga2SSe vdWHs are divided into two different stacking patterns, which are BP/SGa2Se and BP/SeGa2S. Our results demonstrate that these stacking patterns are structurally and mechanically stable. The combination of single-layer BP and Janus Ga2SSe gives rise to an enhancement in the Young's modulus compared to the constituent monolayers. Furthermore, at the ground state, the BP/Ga2SSe vdWHs possess a type-I (straddling) band alignment, which is desired for next-generation optoelectronic applications. The interlayer separation and electric field are effectively used to tune the electronic features of the BP/Ga2SSe vdWH from the type-I to type-II band alignment, and from semiconductor to metal. Our findings show that the BP/Ga2SSe vdWH would be appropriate for next-generation multifunctional optoelectronic and photovoltaic devices.

Ubiquitous defect-induced density wave instability in monolayer graphene

Quantum materials are notoriously sensitive to their environments, where small perturbations can tip a system toward one of several competing ground states. Graphene hosts a rich assortment of such competing phases, including a bond density wave instability ("Kekulé distortion") that couples electrons at the K/K' valleys and breaks the lattice symmetry. Here, we report observations of a ubiquitous Kekulé distortion across multiple graphene systems. We show that extremely dilute concentrations of surface atoms (less than three adsorbed atoms every 1000 graphene unit cells) can self-assemble and trigger the onset of a global Kekulé density wave phase. Combining complementary momentum-sensitive angle-resolved photoemission spectroscopy (ARPES) and low-energy electron diffraction (LEED) measurements, we confirm the presence of this density wave phase and observe the opening of an energy gap. Our results reveal an unexpected sensitivity of the graphene lattice to dilute surface disorder and show that adsorbed atoms offer an attractive route toward designing novel phases in two-dimensional materials.

Anomalies at the Dirac Point in Graphene and Its Hole-Doped Compositions

We study the properties of the Dirac states in SiC-graphene and its hole-doped compositions employing angle-resolved photoemission spectroscopy and density functional theory. The symmetry-selective measurements for the Dirac bands reveal their linearly dispersive behavior across the Dirac point which was termed as the anomalous region in earlier studies. No gap is observed even after boron substitution that reduced the carrier concentration significantly from 3.7×10^{13}  cm^{-2} in SiC-graphene to 0.8×10^{13}  cm^{-2} (5% doping). The anomalies at the Dirac point are attributed to the spectral width arising from the lifetime and momentum broadening in the experiments. The substitution of boron at the graphitic sites leads to a band renormalization and a shift of the Dirac point towards the Fermi level. The internal symmetries appear to be preserved in SiC-graphene even after significant boron substitutions. These results suggest that SiC-graphene is a good platform to realize exotic science as well as advanced technology where the carrier properties like concentration, mobility, etc., can be tuned keeping the Dirac fermionic properties protected.

Novel hybrid monolayers SixGeySn1-x-y: first principles study of structural, electronic, optical, and electron transport properties with NH3 sensing application

The structural, electronic, optical, and electron transport properties of three different atomically thin novel hybrid monolayers comprising of Si, Ge, and Sn atoms in varying proportions are studied using first principles calculations within the framework of density functional theory. The fabrication of similar hybrid materials is practically realizable but the different properties of these novel monolayers are yet to be explored. The proposed hybrid buckled honeycomb monolayers with sp²-sp³ like orbital hybridization are mechanically and dynamically stable, confirmed by the analysis of in-plane elastic constants, phonon dispersion curve and cohesive energy of the monolayers. The electronic band structures of these hybrid two-dimensional (2D) monolayers, namely Ge_0.25Sn_0.25Si_0.50, Si_0.25Ge_0.25Sn_0.50, and Sn_0.25Si_0.25Ge_0.50, show a considerable direct energy bandgap ranging from 120 meV to 283.8 meV while preserving the linear energy-momentum relation at the K point of the Brillouin zone. The calculated significantly low effective mass (0.063-0.101m₀) and very high acoustic phonon limited mobility (∼10⁶ cm² V^-1 s^-1) of the charge carriers inside the hybrid monolayers ensure the presence of relativistic-massless Dirac fermions. In order to further investigate the electronic properties, we have calculated the atom projected density of states and differential charge density. Optical properties, e.g. dielectric function, electron loss function, absorption coefficient, refractive index, reflectivity, and optical conductivity, are also explored for parallelly and perpendicularly polarized incident light. These hybrid monolayers show anisotropic optical response for parallel and perpendicular polarization as a function of frequency of the incident light. Polarization tunable plasma frequency, high absorption coefficient over a wide range of frequency, and high refractive indices suggest these hybrid monolayers as potential candidates for optoelectronic applications. We have also designed three different armchair nanoribbons to study the effect of the adsorption of NH₃ molecules on these hybrid nanoribbons. Our calculated electron transport properties ensure the applications of these nanoribbons as an NH₃ sensor at the molecular level. Thus, our results suggest that the proposed Si_xGe_ySn_1-x-y hybrid monolayers can be a potential candidate for nanoelectronics, optoelectronics and sensor based applications.

The moderating role of social distancing in mobile commerce adoption

The Covid-19 pandemic has pressured marketers and consumers adapt their purchasing habits. Known literature on mobile commerce (MC) highlights its advantage on convenience, which now is accompanied by health safety. Although MC has been outgrowing other online sectors, the early stages of the pandemic provided a new scenario. We study the relationship between consumer's attitudes about Covid-19 public health restrictions and the behavioral intention for MC adoption. Previous research on technology acceptance of online and mobile shopping have focused on aspects like safety and behavioral intention as key factors. Thus, we examine how attitude towards social distancing practices during the pandemic has affected consumers intentions to adopt of mobile commerce. We aim to study the degree on which this attitude affects previous intentions on purchasing or subscribing to services via mobile devices. For this, we present a Theory of Planned Behavior (TPB) model of consumer MC adoption using social distance as a moderator. An empirical analysis using a survey of attitude and beliefs over mobile commerce and social distancing is presented, confirming the factors underlying using structural equation modeling. Results show that the attitudes toward social distancing are a significant moderator of purchasing through mobile devices; indicating that an individual's adherence to recommended practices during the pandemic does positively influence the adoption. MC is known for being a potential advantage to facilitate customer experience. According to our results, we believe marketers should reconsider or further develop MC infrastructure, highlighting its convenience and health safety role.

Graphene on Chromia: A System for Beyond-Room-Temperature Spintronics

Evidence of robust spin-dependent transport in monolayer graphene, deposited on the (0001) surface of the antiferromagnetic (AFM)/magneto-electric oxide chromia (Cr₂ O₃ ), is provided. Measurements performed in the non-local spin-Hall geometry reveal a robust signal that is present at zero external magnetic field and which is significantly larger than any possible ohmic contribution. The spin-related signal persists well beyond the Néel temperature (≈307 K) that defines the transition between the AFM and paramagnetic states, remaining visible at the highest studied temperature of close to 450 K. This robust character is consistent with prior theoretical studies of the graphene/Cr₂ O₃ system, predicting that the lifting of sub-lattice symmetry in the graphene shall induce an effective spin-orbit term of ≈40 meV. Overall, the results indicate that graphene-on-chromia heterostructures are a highly promising framework for the implementation of spintronic devices, capable of operation well beyond room temperature.

Synthetic chiral molecular nanographenes: the key figure of the racemization barrier

Chirality is one of the most intriguing concepts of chemistry, involving living systems and, more recently, materials science. In particular, the bottom-up synthesis of molecular nanographenes endowed with one or several chiral elements is a current challenge for the chemical community. The wilful introduction of defects in the sp² honeycomb lattice of molecular nanographenes allows the preparation of chiral molecules with tuned band-gaps and chiroptical properties. There are two requirements that a system must fulfill to be chiral: (i) lack of inversion elements (planes or inversion centres) and (ii) to be configurationally stable. The first condition is inherently established by the symmetry group of the structure, however, the limit between conformational and configurational isomers is not totally clear. In this feature article, the chirality and dynamics of synthetic molecular nanographenes, with special emphasis on their racemization barriers and, therefore, the stability of their chiroptical properties are discussed. The general features of nanographenes and their bottom-up synthesis, including the main defects inducing chirality in molecular nanographenes are firstly discussed. In this regard, the most common topological defects of molecular NGs as well as the main techniques used for determining their energy barriers are presented. Then, the manuscript is structured according to the dynamics of molecular nanographenes, classifying them in four main groups, depending on their respective isomerization barriers, as flexible, detectable, isolable and rigid nanographenes. In these sections, the different strategies used to increase the isomerization barrier of chiral molecular nanographenes that lead to configurationally stable nanographenes with defined chiroptical properties are discussed.

Tunable structural and electronic properties of C4XY (X # Y = H, Cl and F) monolayers by functionalization, electric field and strain engineering

In this work, we systematically investigate the electronic and mechanical properties of diamane C4X2 (X = H, Cl and F) monolayers as well as the formation of Janus functionalized X/Y-diamane...

Tailoring the Nonlinear Optical Response of Some Graphene Derivatives by Ultraviolet (UV) Irradiation

In the present work the impact of in situ photoreduction, by means of ultraviolet (UV) irradiation, on the nonlinear optical response (NLO) of some graphene oxide (GO), fluorographene (GF), hydrogenated fluorographene (GFH) and graphene (G) dispersions is studied. In situ UV photoreduction allowed for the extended modification of the degree of functionalization (i.e., oxidization, fluorination and hydrogenation), leading to the effective tuning of the corresponding sp²/sp³ hybridization ratios. The nonlinear optical properties of the studied samples prior to and after UV irradiation were determined by means of the Z-scan technique using visible (532 nm), 4 ns laser excitation, and were found to change significantly. More specifically, while GO's nonlinear optical response increases with irradiation time, GF and GFH present a monotonic decrease. The graphene dispersions' nonlinear optical response remains unaffected after prolonged UV irradiation for more than an hour. The present findings demonstrate that UV photoreduction can be an effective and simple strategy for tuning the nonlinear optical response of these graphene derivatives in a controllable way, resulting in derivatives with custom-made responses, thus more suitable for different photonic and optoelectronic applications.

Quantum Sensing of Thermoelectric Power in Low-Dimensional Materials

Thermoelectric power, has been extensively studied in low-dimensional materials where quantum confinement and spin textures can largely modulate thermopower generation. In addition to classical and macroscopic values, thermopower also varies locally over a wide range of length scales, and is fundamentally linked to electron wave functions and phonon propagation. Various experimental methods for the quantum sensing of localized thermopower have been suggested, particularly based on scanning probe microscopy. Here, critical advances in the quantum sensing of thermopower are introduced, from the atomic to the several-hundred-nanometer scales, including the unique role of low-dimensionality, defects, spins, and relativistic effects for optimized power generation. Investigating the microscopic nature of thermopower in quantum materials can provide insights useful for the design of advanced materials for future thermoelectric applications. Quantum sensing techniques for thermopower can pave the way to practical and novel energy devices for a sustainable society.

Emergence of New van Hove Singularities in the Charge Density Wave State of a Topological Kagome Metal RbV_{3}Sb_{5}

Quantum materials with layered kagome structures have drawn considerable attention due to their unique lattice geometry, which gives rise to flat bands together with Dirac-like dispersions. Recently, vanadium-based materials with layered kagome structures were discovered to be topological metals, which exhibit charge density wave (CDW) properties, significant anomalous Hall effect, and unusual superconductivity at low temperatures. Here, we employ angle-resolved photoemission spectroscopy to investigate the electronic structure evolution upon the CDW transition in a vanadium-based kagome material RbV_{3}Sb_{5}. The CDW phase transition gives rise to a partial energy gap opening at the boundary of the Brillouin zone and, most importantly, the emergence of new van Hove singularities associated with large density of states, which are absent in the normal phase and might be related to the superconductivity observed at lower temperatures. Our work sheds light on the microscopic mechanisms for the formation of the CDW and superconducting states in these topological kagome metals.

Quantum transmission through the n-p-n heterojunction of massive 8-Pmmnborophene

We investigate the quantum transmission through the n-p-n heterojunction of massive 8-Pmmnborophene. It is found that the Dirac mass of the electron interacts nontrivially with the anisotropy of the 8-Pmmnborophene, leading to the occurrence of new transmission behaviors in this n-p-n heterojunction. Firstly, the effective energy range of nonzero transmission can be reduced but deviates from the mass amplitude, which induces the further controllability of the transmission property. Secondly, even if the equal-energy surfaces in the p and n parts do not encounter in thek-space, finite transmission is allowed to occur as well. In addition, the existence of Dirac mass can change the reflection manner from the retroreflection to the specular reflection under appropriate conditions. The findings in this work can be helpful in describing the quantum transport properties of the heterojunction based on 8-Pmmnborophene.