The emergence of spin electronics in data storage

Ferromagnetic transformation of α-Fe2O3via Co doping for efficient water oxidation under magnetic field

The introduction of a magnetic field has great potential for enhancing oxygen evolution reaction (OER) performance, but it requires the catalyst to be ferromagnetic and there is a lack of understanding of the fundamental mechanisms. Herein, we achieved the transformation of non-ferromagnetic α-Fe2O3 into ferromagnetic Co0.14FeOx by Co doping. Compared to α-Fe2O3, the OER activity of Co0.14FeOx considerably increased under a magnetic field of 3000 Oe and is proportional to the magnetic field strength within a certain range. This can be ascribed to the external magnetic field enhancing the degree of the magnetic moment ordering of Co0.14FeOx, which improved electron spin polarization.

Unexpected Magnetic Moments in Manganese-Doped (CdSe)13 Nanoclusters: Role of Ligands

This study explores the enhancement in magnetic and photoluminescence properties of Mn2+-doped (CdSe)13 nanoclusters, significantly influenced by the introduction of paramagnetic centers through doping, facilitated by optimized precursor chemistry and precisely controlled surface ligand interactions. Using a cost-effective and scalable synthesis approach with elemental Se and NaBH4 (Se-NaBH4) in n-octylamine, we tailored bonding configurations (Cd-O, Cd-N, and Cd-Se) on the surface of nanoclusters, as confirmed by EXAFS analysis. These bonding configurations allowed for tunable Mn2+-doping with tetrahedral coordination, further stabilized by hydrogen-bonded acetate ligands, as evidenced by 13C NMR and IR spectroscopy. Mulliken charge analysis indicates that the charge redistribution on Se2- suggests electron transfer between surface ligands and the nanocluster, contributing to spin fluctuations. These tailored configurations markedly increased the nanoclusters' magnetic susceptibility and photoluminescence efficiency. The resulting nanoclusters demonstrated a clear concentration-dependent response in emission lifetimes and intensities upon exposure to magnetic field effects (MFE) and spin-spin coupling, alongside a large magnetic moment exceeding 40 μB at 180 K. These findings highlight the potential of these nanoclusters for magneto-optical devices and spintronic applications, showcasing their tunable magnetic properties and exciton dynamics.

Composition-Dependent Voltage-Driven OFF-ON Switching of Ferromagnetism in Co-Ni Oxide Microdisks

Magneto-ionics, which refers to the modification of the magnetic properties of materials through electric-field-induced ion migration, is emerging as one of the most promising methods to develop nonvolatile energy-efficient memory and spintronic and magnetoelectric devices. Herein, the controlled generation of ferromagnetism from paramagnetic Co-Ni oxide patterned microdisks (prepared upon thermal oxidation of metallic microdisks with dissimilar Co-Ni ratios, i.e., Ni25Co75 and Ni50Co50) is demonstrated under the action of voltage. The effect is related to the partial reduction of the oxide phases to their metallic forms. Samples richer in Co show stronger magneto-ionic activity, which manifests in lower-onset threshold voltages, faster switching rates, and larger values of the attained saturation magnetization. By means of scanning electron microscopy, a cobalt segregation phenomenon has been experimentally observed upon thermal oxidation, which has been theoretically discussed from the diffusivities' viewpoint. X-ray diffraction characterization has revealed transitions between purely mixed Ni and Co oxides, in the OFF state, to a mixture of oxide and metallic phases, in the ON state, because of the oxygen ion motion outward/inward the Co-Ni oxide microdisks, depending on the voltage polarity. Ab initio calculations reveal that the energy barrier for oxygen vacancy migration is lower in CoO than in NiO, in agreement with the obtained magneto-ionic responses. The observation of magneto-ionic effects in patterned disks (and not only in archetypical continuous films) is a step further for the practical utilization of this phenomenon in real miniaturized devices.

Chirality-Dependent Anisotropic Nonlinear Optical Effect in Low-Dimensional Hybrid Metal Halides

Low-dimensional hybrid metal halides (LDHMHs) have emerged as a highly promising class of functional materials for a wide range of optoelectronic applications. Their exceptional structural tunability, facilitated by the hybridization of metal halides with organic compounds, enables the formation of three-, two-, one-, or zero-dimensional structures. This flexibility in structural design also allows the incorporation of chirality into the crystalline lattice, giving rise to novel LDHMH materials that are capable of selectively interacting with the spin angular momentum of electrons and photons. Among the unique optoelectronic properties of LDHMHs, the focus of this concept article is their chiroptical nonlinear optical (NLO) effect. LDHMHs demonstrate a highly effective discrimination and generation of circularly polarized (CP) light in the NLO regime, particularly in the second harmonic generation (SHG) process, referred to as SHG-circular dichroism (SHG-CD) and CP-SHG. These anisotropic responses are several orders of magnitude larger than linear chiroptical responses, such as CD and CP luminescence; consequently, LDHMHs are expected to be promising candidates for future optical-information devices and encryption systems. This article introduces recently reported chiral LDHMH materials that exhibit excellent CP-dependent anisotropic SHG responses.

Room-Temperature Organic Spintronic Devices with Wide Range Magnetocurrent Tuning and Multifunctionality via Electro-Optical Compensation Strategy

In spintronics, devices exhibiting large, widely tunable magnetocurrent (MC) values at room temperature are particularly appealing due to their potential in advanced sensing, data storage, and multifunctional technologies. Organic semiconductors (OSCs), with their rich and unique spin-dependent and (opto-)electronic properties, hold significant promise for realizing such devices. However, current organic devices are constrained by limited design strategies, yielding MC values typically confined to tens of percent, thereby restricting their potential for multifunctional applications. Here, this study introduces an electro-optical compensation strategy to modulate MC values, which synergistically integrates and manages the interplays among carrier transport, spin-dependent reactions, and photogenerated carrier dynamics in OSCs-based devices. This approach achieves ultrahigh room-temperature MC values of +13 200% and -10 600% in the designed devices, with continuous and precise tunability over this range-marking a breakthrough in organic spintronic devices. Building on this achievement, by integrating multiple controllable parameters-light, bias, magnetic field, and mechanical flexibility-into a single device, a flexible, room-temperature, multifunctional device is activated, functioning as the high-sensitivity magnetic field sensor, composite field sensor, magnetic current inverter, and magnetically-controlled artificial synaptic, etc. These findings open an avenue for designing high-performance, multifunctional devices with broad implications for future spintronic-related technologies.

Altermagnetism: A Chemical Perspective

Altermagnets have been recently introduced as a classification of collinear, spin compensated magnetic materials that host net-zero magnetization yet display some electronic behaviors typically associated with noncompensated magnetic materials like ferromagnets. The emergence of such properties are a consequence of spin-split bands that arise under specific symmetry conditions in the limit of zero spin-orbit coupling. In this Perspective, we summarize the fundamental criteria for realizing an altermagnetic phase and present a qualitative electronic band structure derivation and symmetry analysis through chemical principles. We then discuss the properties that make altermagnets distinctive candidates for charge-to-spin conversion elements in spintronic devices and provide a brief review of some altermagnetic candidate materials. Finally, we discuss future directions for altermagnetism and highlight opportunities for chemists to advance this emerging field.

Quantum Spin Exchange Interactions Trigger O p Band Broadening for Enhanced Aqueous Zinc-Ion Battery Performance

The pressing demand for large-scale energy storage solutions has propelled the development of advanced battery technologies, among which zinc-ion batteries (ZIBs) are prominent due to their resource abundance, high capacity, and safety in aqueous environments. However, the use of manganese oxide cathodes in ZIBs is challenged by their poor electrical conductivity and structural stability, stemming from the intrinsic properties of MnO2 and the destabilizing effects of ion intercalation. To overcome these limitations, our research delves into atomic-level engineering, emphasizing quantum spin exchange interactions (QSEI). These essential for modifying electronic characteristics, can significantly influence material efficiency and functionality. We demonstrate through density functional theory (DFT) calculations that enhanced QSEI in manganese oxides broadens the O p band, narrows the band gap, and optimizes both proton adsorption and electron transport. Empirical evidence is provided through the synthesis of Ru-MnO2 nanosheets, which display a marked increase in energy storage capacity, achieving 314.4 mAh g-1 at 0.2 A g-1 and maintaining high capacity after 2000 cycles. Our findings underscore the potential of QSEI to enhance the performance of TMO cathodes in ZIBs, pointing to new avenues for advancing battery technology.

Enhancing Rashba Spin-Splitting Strength by Orbital Hybridization

A Rashba spin-splitting state with spin-momentum locking enables the charge-spin interconversion known as the Rashba effect, induced by the interplay of inversion symmetry breaking (ISB) and spin-orbit coupling (SOC). Enhancing spin-splitting strength is promising to achieve high spin-orbit torque (SOT) efficiency for low-power-consumption spintronic devices. However, the energy scale of natural ISB at the interface is relatively small, leading to the weak Rashba effect. In this work, we report that orbital hybridization inducing additional asymmetry potential at the interface observably enhances spin-splitting strength, verified in the hexagonal boron nitride (h-BN)/Co3Pt heterostructures. First-principles calculations suggest the sizable Rashba spin-splitting derived from the out-of-plane p-d hybridization combined with SOC at the h-BN/Co3Pt interface. Then, the SOT efficiency is observably enhanced via the Rashba effect at the h-BN/Co3Pt interface and exhibits unusual temperature dependence, in which the large-area h-BN is in situ grown on the Co3Pt layer with perpendicular magnetic anisotropy by magnetron sputtering. Especially, the dominant damping-like torque is observed, resulting in the lower threshold switching current density and the enhanced switching ratio. Our results provide opportunities for interfacial control to enhance the Rashba effect and the SOT efficiency in heterostructures. It is expected to contribute to the design of energy-efficient spintronic devices.

Achieving Significant Multilevel Modulation in Superior-quality Organic Spin Valve

Organic semiconductors, characterized by their exceptionally long spin relaxation times (≈ms) and unique spinterface effects, are considered game-changers in spintronics. However, achieving high-performance and wide-range tunable magnetoresistance (MR) in organic spintronic devices remains challenging, severely limiting the development of organic spintronics. This work combines straintronic multiferroic heterostructures with organic spin valve (OSV) to develop a three-terminal OSV device with a gate structure. The device exhibits a record-high MR ratio of 281% which 10 times higher than the average in polymer systems. More importantly, this work can perform multilevel writing operations on the device using gate voltages and create at least 10 stable spin-dependent working states within a single device. Both experiments and theoretical calculations confirm such an extraordinary tunability range originates from the synergistic effects of strain and charge accumulation that amplified by the spinterface. This study demonstrates the potential of OSV systems for efficient spin manipulation and highlights the spinterface as an ideal platform for amplifying spin effects for next-generation spintronic devices.

Unveiling the impact of Ni doping on the structural, electronic, and magnetic properties of nanocrystalline FeCo2O4spinel oxide: a combined experimental andab initioinvestigations

In the present work, nanocrystalline samples of compositionsNixFe1-xCo2O4(x= 0.0, 0.25, 0.50, and 0.75) have been synthesized via co-precipitation method by annealing at 900 °C. The nanocrystalline samples of compositions Ni0.25Fe0.75Co2O4(D0.25) and Ni0.5Fe0.5Co2O4(D0.5) crystallizes in a pure spinel phase, whereas Ni0.75Fe0.25Co2O4(D0.75) show the existence of secondary phase of NiO, as confirmed by the x-ray diffraction analysis. The particle size and lattice strain in the samples both decrease as Ni substitution has increased. The field-dependent dc magnetizationM(H) virgin curve measured at 5 K for sample D0.75shows the existence of field-induced metamagnetic transition, while this behavior is absent in samples D0.5and D0.25. Dynamic magnetic properties have been investigated by ac susceptibility measurement, which shows a strong frequency dependence behavior resulting from the blocking/spin-glass freezing states depending upon the amount of Ni substitution and the range of measurement temperature. High-resolution x-ray photoelectron spectroscopy analysis reveals the presence of mixed valence states of Fe2+/Fe3+, Co2+/Co+3, and Ni2+/Ni+3in all samples. Using first principles-based density functional theory calculations with HSE06 exchange-correlation functional predicts the correct description of the ground state, which is ferrimagnetic and insulating in their inverse spinel case for D0.25, D0.5, and D0.75samples that agreed well with our experimental observations. A closer look at the electronic structure near the Fermi level (EF) of Ni-doped samples suggests a typical Mott-Hubbard insulating state while it is found to be a mixture of charge-transfer and Mott-Hubbard insulating state for parent compound FeCo2O4. The obtained spin-dependent gap hierarchy can have possible applications in spintronics. We have studied a detailed correlation between experiment and theory.

Reversal of chirality in solutions and aggregates of chiral tetrachlorinated diperylene diimides towards efficient circularly polarized light detection

Helicenes exhibit promise as active layer materials for circularly polarized light (CPL) detectors due to their strong chiroptical activity. However, their practical application is limited by the complicated synthesis and loosely solid-state packing. This study introduces a chiral induction strategy towards the synthesis of helicene derivatives, chiral tetrachlorinated diperylene diimides ((SSSS)-4CldiPDI or (RRRR)-4CldiPDI). When incorporating the chiral (S/R)-1-cyclohexylethyl (Cy) substituents, the chirality is directly transferred to the π-aromatic core and forms the PP- or MM-helicene subunit. Notably, (SSSS)-Cy induces preferred PP helicity while (RRRR)-Cy leads to the MM helicity in the monomers. However, these molecules exhibit reversed chirality in crystals, where (SSSS)-Cy controls MM helicity and (RRRR)-Cy induces PP helicity. Theoretical calculations reveal that the (SSSS)-PP structure demonstrates lower energy distribution in monomers, whereas the (SSSS)-MM structure exhibits lower energy in crystals. Then, the CPL detection based on n-type PDI-helicene derivatives is achieved by using (SSSS)-4CldiPDI or (RRRR)-4CldiPDI crystals. The maximum photocurrent dissymmetry factor gph of +0.16 for (RRRR)-4CldiPDI and -0.15 for (SSSS)-4CldiPDI is obtained. Our work demonstrates a novel chiral induction strategy for designing helicene-based materials with both high dissymmetry factor and large charge carrier mobility, which offers great potential for the advancement of CPL detection.

Cornertronics in Two-Dimensional Second-Order Topological Insulators

Traditional electronic devices rely on the electron's intrinsic degrees of freedom (d.o.f.) to process information. However, additional d.o.f., like the valley, can emerge in the low-energy states of certain systems. Here, we show that the quantum dots constructed from two-dimensional second-order topological insulators posses a new kind of d.o.f., namely corner freedom, related to the topological corner states that reside at different corners of the systems. Since the corner states are well separated in real space, they can be individually and intuitively manipulated, giving rise to the concept of cornertronics. Via symmetry analysis and material search, we identify the TiSiCO-family monolayers as the first prototype of cornertronics materials, where the corner states can be controlled by both electric and optical fields due to novel corner-layer coupling effect and corner-contrasted linear dichroism. Furthermore, we find that the band gap of the TiSiCO nanodisk lies in the terahertz region and is robust to size reduction. These results indicate that the TiSiCO nanodisks can be used to design terahertz devices with ultrasmall size and electric-field tunable band gap. Besides, the TiSiCO nanodisks are simultaneously sensitive to both the strength and polarization of the terahertz waves. Our findings not only pave the way for cornertronics, but also open a new direction for research in two-dimensional second-order topological insulators, quantum dots, and terahertz electronics.

Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect

In the presence of a high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here we demonstrate the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but there is no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi2O2Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO3. By means of a Rashba bilayer model based on the ab initio band structures of Bi2O2Se thin films, we can ascribe the only even-integer states in thicker films to the hidden Rasbha effect, where the local inversion-symmetry breaking in two sectors of the [Bi2O2]2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one-unit-cell Bi2O2Se film grown on SrTiO3, the asymmetry introduced by the top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.

Prediction of Two-Dimensional Janus Transition-Metal Chalcogenides: Robust Ferromagnetic Semiconductor with High Curie Temperature

Two-dimensional (2D) ferromagnetic semiconductors (FM SCs) provide an ideal platform for the development of quantum information technology in nanoscale devices. However, many developed 2D FM materials present a very low Curie temperature (TC), greatly limiting their application in spintronic devices. In this work, we predict two stable 2D transition metal chalcogenides, V3Se3X2 (X = S, Te) monolayers, by using first-principles calculations. Our results show that the V3Se3Te2 monolayer is a robust bipolar magnetic SC with a moderate bandgap of 0.53 eV, while V3Se3S2 is a direct band-gap FM SC with a bandgap of 0.59 eV. Interestingly, the ferromagnetisms of both monolayers are robust due to the V-S/Se/Te-V superexchange interaction, and TCs are about 406 K and 301 K, respectively. Applying biaxial strains, the FM SC to antiferromagnetic (AFM) SC transition is revealed at 5% and 3% of biaxial tensile strain. In addition, their high mechanical, dynamical, and thermal stabilities are further verified by phonon dispersion calculations and ab initio molecular dynamics (AIMD) calculations. Their outstanding attributes render the V3Se3Y2 (Y = S, Te) monolayers promising candidates as 2D FM SCs for a wide range of applications.

Sign Reversal of Spin-Transfer Torques

Spin-transfer torque (STT) and spin-orbit torque (SOT) form the core of spintronics, allowing for the control of magnetization through electric currents. While the sign of SOT can be manipulated through material and structural engineering, it is conventionally understood that STT lacks a degree of freedom in its sign. However, this study presents the first demonstration of manipulating the STT sign by engineering heavy metals adjacent to magnetic materials in magnetic heterostructures. Spin torques are quantified through magnetic domain-wall speed measurements, and subsequently, both STT and SOT are systematically extracted from these measurements. The results unequivocally show that the sign of STT can be either positive or negative, depending on the materials adjacent to the magnetic layers. Specifically, Pd/Co/Pd films exhibit positive STT, while Pt/Co/Pt films manifest negative STT. First-principle calculations further confirm that the sign reversal of STT originates from the sign reversal of spin polarization of conduction electrons.

Tunable charge transport properties in non-stoichiometric SrIrO3thin films

Delving into the intricate interplay between spin-orbit coupling and Coulomb correlations in strongly correlated oxides, particularly perovskite compounds, has unveiled a rich landscape of exotic phenomena ranging from unconventional superconductivity to the emergence of topological phases. In this study, we have employed pulsed laser deposition technique to grow SrIrO3(SIO) thin films on SrTiO3substrates, systematically varying the oxygen content during the post-deposition annealing. X-ray photoelectron spectroscopy (XPS) provided insights into the stoichiometry and spin-orbit splitting energy of Iridium within the SIO film, while high-resolution x-ray studies meticulously examined the structural integrity of the thin films. Remarkably, our findings indicate a decrease in the metallicity of SIO thin films with reduced annealing O2partial pressure. Furthermore, we carried out magneto-transport studies on the SIO thin films, the results revealed intriguing insights into spin transport as a function of oxygen content. The tunability of the electronic band structure of SIO films with varying oxygen vacancy is correlated with the density functional theory calculations. Our findings elucidate the intricate mechanisms dictating spin transport properties in SIO thin films, offering invaluable guidance for the design and optimization of spintronic devices based on complex oxide materials. Notably, the ability to tune bandwidth by varying post-annealing oxygen partial pressure in iridate-based spintronic materials holds significant promise for advancing technological applications in the spintronics domain.

The energy landscape of magnetic materials

Magnetic materials can display many solutions to the electronic-structure problem, corresponding to different local or global minima of the energy functional. In Hartree-Fock or density-functional theory different single-determinant solutions lead to different magnetizations, ionic oxidation states, hybridizations, and inter-site magnetic couplings. The vast majority of these states can be fingerprinted through their projection on the atomic orbitals of the magnetic ions. We have devised an approach that provides an effective control over these occupation matrices, allowing us to systematically explore the landscape of the potential energy surface. We showcase the emergence of a complex zoology of self-consistent states; even more so when semi-local density-functional theory is augmented - and typically made more accurate - by Hubbard corrections. Such extensive explorations allow to robustly identify the ground state of magnetic systems, and to assess the accuracy (or not) of current functionals and approximations.

Perfect Zeeman Anisotropy in Rotationally Symmetric Quantum Dots with Strong Spin-Orbit Interaction

In nanoscale structures with rotational symmetry, such as quantum rings, the orbital motion of electrons combined with a spin-orbit interaction can produce a very strong and anisotropic Zeeman effect. Since symmetry is sensitive to electric fields, ring-like geometries provide an opportunity to manipulate magnetic properties over an exceptionally wide range. In this work, we show that it is possible to form rotationally symmetric confinement potentials inside a semiconductor quantum dot, resulting in electron orbitals with large orbital angular momentum and strong spin-orbit interactions. We find complete suppression of Zeeman spin splitting for magnetic fields applied in the quantum dot plane, similar to the expected behavior of an ideal quantum ring. Spin splitting reappears as orbital interactions are activated with symmetry-breaking electric fields. For two valence electrons, representing a common basis for spin-qubits, we find that modulating the rotational symmetry may offer new prospects for realizing tunable protection and interaction of spin-orbital states.

Magnetic phase transition regulated by an interface coupling effect in CrBr3/electride Ca2N van der Waals heterostructures

Compared with ferromagnetic (FM) materials, antiferromagnetic (AFM) materials have the advantages of not generating stray fields, resisting magnetic field disturbances, and displaying ultrafast dynamics and are thus considered as ideal candidate materials for next-generation high-speed and high-density magnetic storage. In this study, a new AFM device was constructed based on density functional theory calculations through the formation of a CrBr3/Ca2N van der Waals heterostructure. The FM ground state in CrBr3 undergoes an AFM transition when combining with the electride Ca2N. In such a system, since the metal Ca atoms form the exposed layer in the electride, the heterostructure interface has a high binding energy and a large amount of charge transfer. However, for individual electron doping, the FM ground state in the CrBr3 monolayer is robust. Therefore, the main factor in magnetic phase transition is the interface orbital coupling caused by the strong binding energy. Furthermore, the interface coupling effect was revealed to be a competition between direct exchange and superexchange interactions. Additionally, different pathways of orbital hybridization cause a transition of the magnetic anisotropy from out-of-plane to in-plane. This work not only provides a feasible strategy for changing the ground state of magnetic materials on electride substrates but also brings about more possibilities for the construction and advancement of new AFM devices.

Differences in Kondo Splitting of Surface Quantum Systems Induced by Two Distinct Magnetic Tips: A Joint Method of DFT and HEOM

The interactions between a magnetic tip and local spin impurities initiate unconventional Kondo phenomena, such as asymmetric suppression or even splitting of the Kondo peak. However, a lack of realistic theoretical models and comprehensive explanations for this phenomenon persists due to the complexity of the interactions. This research employs a joint method of density functional theory (DFT) and hierarchical equation of motion (HEOM) to simulate and contrast the modulation of the spin state and Kondo behavior in the Fe/Cu(100) system with two distinct magnetic tips. A cobalt tip, possessing a larger magnetic moment, incites greater atomic displacement of the iron atom, more notable alterations in electronic structure, and enhanced charge transfer with the environment compared with the control process utilizing a nickel tip. Furthermore, the Kondo resonance undergoes asymmetric splitting as a result of the ferromagnetic correlation between the iron atom and the magnetic tip. The Co tip's higher spin polarization results in a wider spacing between the splitting peaks. This investigation underscores the precision of the DFT + HEOM approach in predicting complex quantum phenomena and explaining the underlying physical principles. This provides valuable theoretical support for developing more sophisticated quantum regulation experiments.

Spin Hall effect modulated by an electric field in asymmetric two-dimensional MoSiAs2Se

Spin current generation from charge current in nonmagnetic materials promises an energy-efficient scheme for manipulating magnetization in spintronic devices. In some asymmetric two-dimensional (2D) materials, the Rashba and valley effects coexist owing to strong spin-orbit coupling (SOC), which induces the spin Hall effect due to spin-momentum locking of both effects. Herein, we propose a new Janus structure MoSiAs2Se with both valley physics and the Rashba effect and reveal an effective way to modulate the properties of this structure. The results demonstrated that applying an external electric field is an effective means to modulating the electronic properties of MoSiAs2Se, leading to both type I-II phase transitions and semiconductor-metal phase transitions. Furthermore, the coexistence of the Rashba and valley effects in monolayer MoSiAs2Se contributes to the spin Hall effect (SHE). The magnitude and direction of spin Hall conductivity can also be manipulated with an out-of-plane electric field. Our results enrich the physics and materials of the Rashba and valley systems, opening new opportunities for the applications of 2D Janus materials in spintronic devices.

Observation of Linear Magnetoresistance in MoO2

Magnetoresistance, the change in resistance with applied magnetic fields, is crucial to the magnetic sensor technology. Linear magnetoresistance has been intensively studied in semimetals and semiconductors. However, the air-stable oxides with a large linear magnetoresistance are highly desirable but remain to be fully explored. In this paper, we report the direct observation of linear magnetoresistance in polycrystalline MoO2 without any sign of saturation up to 7 T under 50 K. Interestingly, the linear magnetoresistance reaches as large as 1500% under 7 T at 2 K. The linear field dependence is in great contrast to the parabolic behavior observed in single-crystal MoO2, probably due to phonon scattering near the grain boundaries. Our results pave the way to comprehending magneto-transport behavior in oxides and their potential applications in magnetic sensors.

Chirality-Induced Spin Selectivity in Composite Materials: A Device Perspective

ConspectusMagnetism is an area of immense fundamental and technological importance. At the atomic level, magnetism originates from electron "spin". The field of nanospintronics (or nanoscale spin-based electronics) aims to control spins in nanoscale systems, which has resulted in astronomical improvement in data storage and magnetic field sensing technologies over the past few decades, recognized by the 2007 Nobel Prize in Physics. Spins in nanoscale solid-state devices can also act as quantum bits or qubits for emerging quantum technologies, such as quantum computing and quantum sensing.Due to the fundamental connection between magnetism and spins, ferromagnets play a key role in many solid-state spintronic devices. This is because at the Fermi level, electron density of states is spin-polarized, which permits ferromagnets to act as electrical injectors and detectors of spins. Ferromagnets, however, have limitations in terms of low spin polarization at the Fermi level, stray magnetic fields, crosstalk, and thermal instability at the nanoscale. Therefore, new physics and new materials are needed to propel spintronic and quantum device technologies to the true atomic limit. Emerging new phenomena such as chirality induced spin selectivity or CISS, in which an intriguing correlation between carrier spin and medium chirality is observed, could therefore be instrumental in nanospintronics. This effect could allow molecular-scale, chirality controlled spin injection and detection without the need for any ferromagnet, thus opening a fundamentally new direction for device spintronics.While CISS finds a myriad of applications in diverse areas such as chiral separation, recognition, detection, and asymmetric catalysis, in this focused Account, we exclusively review spintronic device results of this effect due to its immense potential for future spintronics. The first generation of CISS-based spintronic devices have primarily used chiral bioorganic molecules; however, many practical limitations of these materials have also been identified. Therefore, our discussion revolves around the family of chiral composite materials, which may emerge as an ideal platform for CISS due to their ability to assimilate various desirable material properties on a single platform. This class of materials has been extensively studied by the organic chemistry community in the past decades, and we discuss the various chirality transfer mechanisms that have been identified, which play a central role in CISS. Next, we discuss CISS device studies performed on some of these chiral composite materials. Emphasis is given to the family of chiral organic-carbon allotrope composites, which have been extensively studied by the authors of this Account over the past several years. Interestingly, due to the presence of multiple materials, CISS signals from hybrid chiral systems sometimes differ from those observed in purely chiral systems. Given the sheer diversity of chiral composite materials, CISS device studies so far have been limited to only a few varieties, and this Account is expected to draw increased attention to the family of chiral composites and motivate further studies of their CISS applications.

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

The pursuit of van der Waals (vdW) heterostructures with high Curie temperature and strong perpendicular magnetic anisotropy (PMA) is vital to the advancement of next generation spintronic devices. First-principles calculations are used to study the electronic structures and magnetic characteristics of GaN/VS2vdW heterostructure under biaxial strain and electrostatic doping. Our findings show that a ferromagnetic ground state with a remarkable Curie temperature (477 K), much above room temperature, exists in GaN/VS2vdW heterostructure and 100% spin polarization efficiency. Additionally, GaN/VS2vdW heterostructure still maintains PMA under biaxial strain, which is indispensable for high-density information storage. We further explore the electron, magnetic, and transport properties of VS2/GaN/VS2vdW sandwich heterostructure, where the magnetoresistivity can reach as high as 40%. Our research indicates that the heterostructure constructed by combining the ferromagnet VS2and the non-magnetic semiconductor GaN is a promising material for vdW spin valve devices at room temperature.

Emerging Spintronic Materials and Functionalities

The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.

Magnetic tunnel junction random number generators applied to dynamically tuned probability trees driven by spin orbit torque

Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNGs) can consume orders of magnitude less energy per bit than CMOS pseudo-RNGs. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert equation solver the use of pMTJs driven by spin-orbit torque to directly sample numbers from arbitrary probability distributions with the help of a tunable probability tree. The tree operates by dynamically biasing sequences of pMTJ relaxation events, called 'coinflips', via an additional applied spin-transfer-torque current. Specifically, using a single, ideal pMTJ device we successfully draw integer samples on the interval [0, 255] from an exponential distribution based onp-value distribution analysis. In order to investigate device-to-device variations, the thermal stability of the pMTJs are varied based on manufactured device data. It is found that while repeatedly using a varied device inhibits ability to recover the probability distribution, the device variations average out when considering the entire set of devices as a 'bucket' to agnostically draw random numbers from. Further, it is noted that the device variations most significantly impact the highest level of the probability tree, with diminishing errors at lower levels. The devices are then used to draw both uniformly and exponentially distributed numbers for the Monte Carlo computation of a problem from particle transport, showing excellent data fit with the analytical solution. Finally, the devices are benchmarked against CMOS and memristor RNGs, showing faster bit generation and significantly lower energy use.

Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling

Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, the mainstream writing operation of MTJs mainly relies on electric current with high energy dissipation, which can be greatly reduced if an electric field is used instead. In this regard, strain-mediated multiferroic heterostructure composed of MTJ and ferroelectrics are promising with the advantages of room temperature and magnetic field-free as already demonstrated by MTJ with in-plane magnetic anisotropy. However, there is no such report on the perpendicular MTJs (p-MTJs), which have been commercialized. Here, we investigate electric-field control of resistance state of MgO-based p-MTJs in multiferroic heterostructures. A remarkable and nonvolatile manipulation of resistance is demonstrated at room temperature without magnetic field assistance. Through various characterizations and micromagnetic simulation, the manipulation mechanism is uncovered. Our work provides an effective avenue for manipulating p-MTJ resistance by electric fields and is notable for high density and ultralow power spintronic devices.

Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

Neuromorphic computing is a new field of information technology, which is inspired by the biomimetic properties of the memristor as an electronic synapse and neuron. If there are electronic receptors that can transmit exterior impulses to the internal nervous system, then the use of memristors can be expanded to artificial nerves. In this study, a layer type memristor is used to build an artificial nociceptor in a very feasible and straightforward manner. An artificial nociceptor is demonstrated here through the fabrication and characterization of a cobalt-doped zinc oxide (CZO)/Au based memristor. In order to increase threshold switching performance, the surface effects of the CZO layer are eliminated by adding cobalt cobalt-doped zinc oxide (CZO) layer between the P++-Si and Au electrodes. Allodynia, hyperalgesia, threshold, and relaxation are the four distinct nociceptive behaviours that the device displays based on the strength, rate of relapse, and duration of the external stimuli. The electrons that are trapped in or released from the CZO layer's traps are responsible for these nociceptive behaviours. A multipurpose nociceptor performance is produced by this type of CZO-based device, which is crucial for artificial intelligence system applications such as neural integrated devices with nanometer-sized characteristics.

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers

Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg1/3Nb2/3)0.7Ti0.3O3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.

Emerging Antiferromagnets for Spintronics

Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.

Perspectives: Light Control of Magnetism and Device Development

Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.

Ultra-thin van der Waals magnetic tunnel junction based on monoatomic boron vacancy of hexagonal boron nitride

We present a novel strategy to create a van der Waals-based magnetic tunnel junction (MTJ) comprising a three-atom layer of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) layers by introducing a monoatomic boron vacancy in each hBN layer. The magnetic properties and electronic structure of the system were investigated using density functional theory (DFT) and the transmission probability of the MTJ was investigated using the Landauer-Büttiker formalism within the non-equilibrium Green function method. The Stoner gap was created between the spin-majority channel and the spin-minority channel on the local density of states of the hBN monoatomic boron-vacancy (VB) near the Fermi energy, creating a possible control of the spin valve by considering two magnetic alignment of hBN(VB) layers, anti-parallel configuration (APC) and parallel configuration (PC). The transmission probability calculation results showed a high electron transmission in the PC of the hBN(VB) layers and a low transmission when the APC was considered. A high tunneling magnetoresistance (TMR) ratio of approximately 400% was observed when comparing the APC and PC of the hBN(VB) layers in hBN(VB)/Gr/hBN(VB), giving the highest TMR ratio for the thinnest MTJ system.

Unexpected Competition between Ferroelectricity and Rashba Effects in Epitaxially Strained SrTiO_{3}

The Rashba parameter α_{R} is usually assumed to scale linearly with the amplitude of polar displacements by construction of the spin-orbit interaction. On the basis of first-principles simulations, ferroelectric phases of SrTiO_{3} reached under epitaxial compressive strain are characterized by (i) large Rashba effects at the bottom of the conduction band near the paraelectric-ferroelectric boundary and (ii) an unexpected suppression of the phenomena when the amplitude of polar displacements increases. This peculiar behavior is ascribed to the inverse dependence of the Rashba parameter with the crystal field Δ_{CF} induced by the polar displacements that alleviates the degeneracy of Ti t_{2g} states and annihilates the Rashba effects. Although α_{R} has intrinsically a linear dependance on polar displacements, the latter becomes antagonist to Rashba phenomena at large polar mode amplitude. Thus, the Rashba coefficient may be bound to an upper value.

Observation of giant room-temperature anisotropic magnetoresistance in the topological insulator β-Ag2Te

Achieving room-temperature high anisotropic magnetoresistance ratios is highly desirable for magnetic sensors with scaled supply voltages and high sensitivities. However, the ratios in heterojunction-free thin films are currently limited to only a few percent at room temperature. Here, we observe a high anisotropic magnetoresistance ratio of -39% and a giant planar Hall effect (520 μΩ⋅cm) at room temperature under 9 T in β-Ag2Te crystals grown by chemical vapor deposition. We propose a theoretical model of anisotropic scattering - induced by a Dirac cone tilt and modulated by intrinsic properties of effective mass and sound velocity - as a possible origin. Moreover, small-size angle sensors with a Wheatstone bridge configuration were fabricated using the synthesized β-Ag2Te crystals. The sensors exhibited high output response (240 mV/V), high angle sensitivity (4.2 mV/V/°) and small angle error (<1°). Our work translates the developments in topological insulators to a broader impact on practical applications such as high-field magnetic and angle sensors.

Observation of time-reversal symmetry breaking in the band structure of altermagnetic RuO2

Altermagnets are an emerging elementary class of collinear magnets. Unlike ferromagnets, their distinct crystal symmetries inhibit magnetization while, unlike antiferromagnets, they promote strong spin polarization in the band structure. The corresponding unconventional mechanism of time-reversal symmetry breaking without magnetization in the electronic spectra has been regarded as a primary signature of altermagnetism but has not been experimentally visualized to date. We directly observe strong time-reversal symmetry breaking in the band structure of altermagnetic RuO2 by detecting magnetic circular dichroism in angle-resolved photoemission spectra. Our experimental results, supported by ab initio calculations, establish the microscopic electronic structure basis for a family of interesting phenomena and functionalities in fields ranging from topological matter to spintronics, which are based on the unconventional time-reversal symmetry breaking in altermagnets.

Altermagnetic lifting of Kramers spin degeneracy

Lifted Kramers spin degeneracy (LKSD) has been among the central topics of condensed-matter physics since the dawn of the band theory of solids1,2. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology3-7 to topological quantum matter8-14. Traditionally, LKSD has been considered to originate from two possible internal symmetry-breaking mechanisms. The first refers to time-reversal symmetry breaking by magnetization of ferromagnets and tends to be strong because of the non-relativistic exchange origin15. The second applies to crystals with broken inversion symmetry and tends to be comparatively weaker, as it originates from the relativistic spin-orbit coupling (SOC)16-19. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic20,21, that allows for LKSD without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of LKSD generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization20-23. Our observation of the altermagnetic LKSD can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors20,21, that have been either identified recently or perceived for many decades as conventional antiferromagnets21,24,25.

Enhancing Spin-Transport Characteristics, Spin-Filtering Efficiency, and Negative Differential Resistance in Exchange-Coupled Dinuclear Co(II) Complexes for Molecular Spintronics Applications

Single-molecule spintronics, where electron transport occurs via a paramagnetic molecule, has gained wide attention due to its potential applications in the area of memory devices to switches. While numerous organic and some inorganic complexes have been employed over the years, there are only a few attempts to employ exchange coupled dinuclear complexes at the interface, and the advantage of fabricating such a molecular spintronics device in the observation of switchable Kondo resonance was demonstrated recently in the dinuclear [Co2(L)(hfac)4] (1) complex (Wagner et al., Nat. Nanotechnol. 2013, 8, 575-579). In this work, employing an array of theoretical tools such as density functional theory (DFT), the ab initio CASSCF/NEVPT2 method, and DFT combined with nonequilibrium Green Function (NEGF) formalism, we studied in detail the role of magnetic coupling, ligand field, and magnetic anisotropy in the transport characteristics of complex 1. Particularly, our calculations not only reproduce the current-voltage (I-V) characteristics observed in experiments but also unequivocally establish that these arise from an exchange-coupled singlet state that arises due to antiferromagnetic coupling between two high-spin Co(II) centers. Further, the estimated spin Hamiltonian parameters such as J, g values, and D and E/D values are only marginally altered for the molecule at the interface. Further, the exchange-coupled state was found to have very similar transport responses, despite possessing significantly different geometries. Our transport calculations unveil a new feature of the negative differential resistance (NDR) effect on 1 at the bias voltage of 0.9 V, which agrees with the experimental I-V characteristics reported. The spin-filtering efficiency (SFE) computed for the spin-coupled states was found to be only marginal (∼25%); however, if the ligand field is fine-tuned to obtain a low-spin Co(II) center, a substantial SFE of 44% was noted. This spin-coupled state also yields a very strong NDR with a peak-to-valley ratio (PVR) of ∼56 - a record number that has not been witnessed so far in this class of compounds. Additionally, we have established further magnetostructural-transport correlations, providing valuable insights into how microscopic spin Hamiltonian parameters can be associated with SFE. Several design clues to improve the spin-transport characteristics, SFE and NDR in this class of molecule, are offered.

Chiroptical Switching of Electrochromic Polymer Thin Films

The interaction between light and chiroptical polymers plays a crucial role in chiroptics, spintronics, and chiral-spin selectivity. Despite considerable successes in creating dissymmetric polymer films, the elucidation of chiroptical activities under electrochemical switching remains unexplored. Here homogeneous chiral electrochromics is reported using chiral assembly of conjugated polymers through a transient solidification process with molecular chiral templates. In their neutral state, the chiral electrochromic polymers directly produce a remarkably dissymmetric polarization-dependent transmittance. The circular dichroism (CD) and dissymmetric transmission can be tuned by adjusting the doping level of the electrochemically active polymer films. Under high levels of oxidation, the chiroptical activities are reversed with strong bleaching in the visible, leading to formation of monosignate CD spectra over the infrared region. The matching between circular polarization handedness and chirality of chiroptical polymers makes a distinct impact on optical contrast and color switching dynamics due to the flipped chiroptical activities through polymer redox reactions. The differential circularly polarized transmission in the chiral see-through display can make a well-resolved color change in human eyes, demonstrating proof-of-concept devices for 3D imaging and information encryption. This work serves as a foundation to develop advanced on-chip fabrication of circular polarization-multiplexed display in flexible and highly integrated platforms.

Fully Electrically Controlled van der Waals Multiferroic Tunnel Junctions

The fully electrical control of the magnetic states in magnetic tunnel junctions is highly pursued for the development of the next generation of low-power and high-density information technology. However, achieving this functionality remains a formidable challenge at present. Here we propose an effective strategy by constructing a trilayer van der Waals multiferroic structure, consisting of CrI3-AgBiPSe6 and Cr2Ge2Te6-In2Se3, to achieve full-electrical control of multiferroic tunnel junctions. Within this structure, two different magnetic states of the magnetic bilayers (CrI3/Cr2Ge2Te6) can be modulated and switched in response to the polarization direction of the adjacent ferroelectric materials (AgBiPSe6/In2Se3). The intriguing magnetization reversal is mainly attributed to the polarization-field-induced band structure shift and interfacial charge transfer. On this basis, we further design two multiferroic tunnel junction devices, namely, graphene/CrI3-AgBiPSe6/graphene and graphene/Cr2Ge2Te6-In2Se3/graphene. In these devices, good interfacial Ohmic contacts are successfully obtained between the graphene electrode and the heterojunction, leading to an ultimate tunneling magnetoresistance of 9.3 × 106%. This study not only proposes a feasible strategy and identifies a promising candidate for achieving fully electrically controlled multiferroic tunnel junctions but also provides insights for designing other advanced spintronic devices.

Large exchange bias enhancement and control of ferromagnetic energy landscape by solid-state hydrogen gating

Voltage control of exchange bias is desirable for spintronic device applications, however dynamic modulation of the unidirectional coupling energy in ferromagnet/antiferromagnet bilayers has not yet been achieved. Here we show that by solid-state hydrogen gating, perpendicular exchange bias can be enhanced by > 100% in a reversible and analog manner, in a simple Co/Co0.8Ni0.2O heterostructure at room temperature. We show that this phenomenon is an isothermal analog to conventional field-cooling and that sizable changes in average coupling energy can result from small changes in AFM grain rotatability. Using this method, we show that a bi-directionally stable ferromagnet can be made unidirectionally stable, with gate voltage alone. This work provides a means to dynamically reprogram exchange bias, with broad applicability in spintronics and neuromorphic computing, while simultaneously illuminating fundamental aspects of exchange bias in polycrystalline films.

Bi2O2Se-based CBRAM integrated artificial synapse

Integrating two-dimensional (2D) semiconducting materials into memristor structures has paved the way for emerging 2D materials to be employed in a vast field of memory applications. Bismuth oxyselenide (Bi2O2Se), a 2D material with high electron mobility, has attracted significant research interest owing to its great potential in various fields of advanced applications. Here, we explore the out-of-plane intrinsic switching behavior of few-layered Bi2O2Se via a cross point device for application in conductive bridge random access memory (CBRAM) and artificial synapses for neuromorphic computing. Via state-of-the-art methods, CVD-grown Bi2O2Se nanoplate is applied as a switching material (SM) in an Al/Cu/Bi2O2Se/Pd CBRAM structure. The device exhibits ∼90 consecutive DC cycles with a tight distribution of the SET/RESET voltages under a compliance current (CC) of 1 mA, a retention of over 10 ks, and multilevel switching characteristics showing four distinct states at Vread values of 0.1, 0.2, 0.25, and 0.3 V. Moreover, an artificial synapse is realized with potentiation and depression by modulating the conductance. The switching mechanism is explained via Cu migration through Bi2O2Se based on HRTEM analysis. The present structure shows potential for future integrated memory applications.

Toward Ultimate Memory with Single-Molecule Multiferroics

The demand for high-density storage is urgent in the current era of data explosion. Recently, several single-molecule (-atom) magnets and ferroelectrics have been reported to be promising candidates for high-density storage. As another promising candidate, single-molecule multiferroics are not only small in size but also possess ferroelectric and magnetic orderings, which can sometimes be strongly coupled and used as data storage to realize the combination of electric writing and magnetic reading. However, they have been rarely proposed and have never been experimentally reported. Here, by building Hamiltonian models, we propose a new model of single-molecule multiferroics in which electric dipoles and magnetic moments are parallel and can rotate with the rotation of the single molecule. Furthermore, by performing spin-lattice dynamics simulations, we reveal the conditions (e.g., large enough single-ion anisotropy and an appropriate electric field) under which the new single-molecule multiferroic can arise. Based on this model, as well as first-principles calculations, a realistic example of Co(NH3)4N@SWCNT is constructed and numerically confirmed to demonstrate the feasibility of the new single-molecule multiferroic model. Our work not only sheds light on the discovery of single-molecule multiferroics but also provides a new guideline to design multifunctional materials for ultimate memory devices.

Study of Elastic and Structural Properties of BaFe2As2 Ultrathin Film Using Picosecond Ultrasonics

We obtain the through-thickness elastic stiffness coefficient (C33) in nominal 9 nm and 60 nm BaFe2As2 (Ba-122) thin films by using picosecond ultrasonics. Particularly, we reveal the increase in elastic stiffness as film thickness decreases from bulk value down to 9 nm, which we attribute to the increase in intrinsic strain near the film-substrate interface. Our density functional theory (DFT) calculations reproduce the observed acoustic oscillation frequencies well. In addition, temperature dependence of longitudinal acoustic (LA) phonon mode frequency for 9 nm Ba-122 thin film is reported. The frequency change is attributed to the change in Ba-122 orthorhombicity (a-b)/(a+b). This conclusion can be corroborated by our previous ultrafast ellipticity measurements in 9 nm Ba-122 thin film, which exhibit strong temperature dependence and indicate the structural phase transition temperature Ts.

Synthesis, Characterization, and Applications of Nanomaterials for Energy Conversion and Storage

Ever since the commencement of the Industrial Revolution in Great Britain in the mid-18th century, the annual global energy consumption from various fossil fuels, encompassing wood, coal, natural gas, and petroleum, has demonstrated an exponential surge over the past four centuries [...].

Improved resistive switching performance and realized electric control of exchange bias in a NiO/HfO2 bilayer structure

The fluctuation of switching parameters is unavoidable in conductive filaments (CFs)-type resistive switching (RS) devices, which restricts the application in resistive random-access memory. Here, we employed an uninsulated antiferromagnetic (AFM) NiO layer adhered to a well-insulating HfO2 layer to effectively suppress the RS fluctuation by achieving forming-free, narrower set voltage distribution, a more stable on/off ratio, and better endurance in comparison with single-HfO2-layer based RS devices. The conduction scaling behavior indicates that the NiO/HfO2 bilayer has a smaller scale parameter S0 (lateral dimension of the bottleneck for the CFs). Besides this, considering some preexisting conductive paths in the NiO layer, the electric fields and the formation/rupture of CFs can be highly localized, leading to reduced switching fluctuation and improved RS performance in the NiO/HfO2-based RS devices. Moreover, asymmetric I-V curves measured in a high resistance state (HRS) in positively and negatively biased regions and the electric modulation of exchange bias (EB) arising from the Co-NiO interfacial coupling are favorable for revealing the inherent mechanism for RS. The coexistence of RS and EB is also useful to the design of novel multifunctional memory devices.

Strategies and applications of generating spin polarization in organic semiconductors

The advent of spintronics has undoubtedly revolutionized data storage, processing, and sensing applications. Organic semiconductors (OSCs), characterized by long spin relaxation times (>μs) and abundant spin-dependent properties, have emerged as promising materials for advanced spintronic applications. To successfully implement spin-related functions in organic spintronic devices, the four fundamental processes of spin generation, transport, manipulation, and detection form the main building blocks and are commonly in demand. Thereinto, the effective generation of spin polarization in OSCs is a precondition, but in practice, this has not been an easy task. In this context, considerable efforts have been made on this topic, covering novel materials systems, spin-dependent theories, and device fabrication technologies. In this review, we underline recent advances in external spin injection and organic property-induced spin polarization, according to the distinction between the sources of spin polarization. We focused mainly on summarizing and discussing both the physical mechanism and representative research on spin generation in OSCs, especially for various spin injection methods, organic magnetic materials, the chiral-induced spin selectivity effect, and the spinterface effect. Finally, the challenges and prospects that allow this topic to continue to be dynamic were outlined.

Graphene Spin Valves for Spin Logic Devices

An alternative to charge-based electronics identifies the spin degree of freedom for information communication and processing. The long spin-diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of the graphene spin valve (SV) has inspired spin devices in graphene including spin field-effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development of spin logic. This review examines the advances in graphene SVs and their role in the development of spin logic devices. Different transport and scattering mechanisms in charge and spin are discussed. Furthermore, the on/off switching energy between graphene SVs and charge-based FETs is compared to highlight their prospects for low-power devices. The challenges and perspectives that need to be addressed for the future development of spin logic devices are then outlined.

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices' radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV-vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

Helical polymers for dissymmetric circularly polarized light imaging

Control of the spin angular momentum (SAM) carried in a photon provides a technologically attractive element for next-generation quantum networks and spintronics1-5. However, the weak optical activity and inhomogeneity of thin films from chiral molecular crystals result in high noise and uncertainty in SAM detection. Brittleness of thin molecular crystals represents a further problem for device integration and practical realization of chiroptical quantum devices6-10. Despite considerable successes with highly dissymmetric optical materials based on chiral nanostructures11-13, the problem of integration of nanochiral materials with optical device platforms remains acute14-16. Here we report a simple yet powerful method to fabricate chiroptical flexible layers via supramolecular helical ordering of conjugated polymer chains. Their multiscale chirality and optical activity can be varied across the broad spectral range by chiral templating with volatile enantiomers. After template removal, chromophores remain stacked in one-dimensional helical nanofibrils producing a homogeneous chiroptical layer with drastically enhanced polarization-dependent absorbance, leading to well-resolved detection and visualization of SAM. This study provides a direct path to scalable realization of on-chip detection of the spin degree of freedom of photons necessary for encoded quantum information processing and high-resolution polarization imaging.

Large tunneling magnetoresistance in spin-filtering 1T-MnSe2/h-BN van der Waals magnetic tunnel junction

The magnetic tunnel junction (MTJ), one of the most prominent spintronic devices, has been widely utilized for memory and computation systems. Electrical writing is considered as a practical method to enhance the performance of MTJs with high circuit integration density and ultralow-power consumption. Meanwhile, a large tunneling magnetoresistance (TMR), especially at the non-equilibrium state, is desirable for the improvement of the sensitivity and stability of MTJ devices. However, achieving both aspects efficiently is still challenging. Here, we propose a two-dimensional (2D) MTJ of 1T-MnSe₂/h-BN/1T-MnSe₂/h-BN/1T-MnSe₂ with efficient electrical writing, reliable reading operations and high potential to work at room temperature. First, for this proposed MTJ with a symmetrical structure and an antiparallel magnetic state, the degeneracy of the energy could be broken by an electric field, resulting in a 180° magnetization reversal. A first principles study confirms that the magnetization of the center 1T-MnSe₂ layer could be reversed by changing the direction of the electric field, when the magnetic configurations of the two outer 1T-MnSe₂ layers are fixed in the antiparallel state. Furthermore, we report a theoretical spin-related transport investigation of the MTJ at the non-equilibrium state. Thanks to the half-metallicity of 1T-MnSe₂, TMR ratios reach very satisfactory values of 2.56 × 10³% with the magnetization information written by an electric field at room temperature. In addition, the performance of the TMR effect exhibits good stability even when the bias voltage increases gradually. Our theoretical findings show that this proposed MTJ is a promising high performance spintronic device and could promote the design of ultralow-power spintronic devices.