Electrically driven phase transition in magnetite nanostructures

Quantum Monte Carlo Method in the Steady State

We present a numerically exact steady-state inchworm Monte Carlo method for nonequilibrium quantum impurity models. Rather than propagating an initial state to long times, the method is directly formulated in the steady state. This eliminates any need to traverse the transient dynamics and grants access to a much larger range of parameter regimes at vastly reduced computational costs. We benchmark the method on equilibrium Green's functions of quantum dots in the noninteracting limit and in the unitary limit of the Kondo regime. We then consider correlated materials described with dynamical mean field theory and driven away from equilibrium by a bias voltage. We show that the response of a correlated material to a bias voltage differs qualitatively from the splitting of the Kondo resonance observed in bias-driven quantum dots.

Strain-Induced Magnetoelectric Coupling in Fe3O4/BaTiO3 Nanopillar Composites

Magnetoelectric coupling properties are limited to the substrate clamping effect in traditional ferroelectric/ferromagnetic heterostructures. Here, Fe₃O₄/BaTiO₃ nanopillar composites are successfully constructed. The well-ordered BaTiO₃ nanopillar arrays are prepared through template-assisted pulsed laser deposition. The Fe₃O₄ layer is coated on BaTiO₃ nanopillar arrays by atomic layer deposition. The nanopillar arrays and heterostructure are confirmed by scanning electron microscopy and transmission electron microscopy. A large thermally driven magnetoelectric coupling coefficient of 395 Oe °C^-1 near the phase transition of BaTiO₃ (orthorhombic to rhombohedral) is obtained, indicating a strong strain-induced magnetoelectric coupling effect. The enhanced magnetoelectric coupling effect originated from the reduced substrate clamping effect and increased the interface area in nanopillar structures. This work opens a door toward cutting-edge potential applications in spintronic devices.

Deformation and fracture of crystalline tungsten and fabrication of composite STM probes

Fracturing microscale constrictions in metallic wires, such as tungsten, platinum, or platinum-iridium, is a common fabrication method used to produce atomically sharp tips for scanning tunneling microscopy (STM), field-emission microscopy and field ion microscopy. Typically, a commercial polycrystalline drawn wire is locally thinned and then fractured by means of a dislocation slip inside the constriction. We examine a special case where a dislocation-free microscale constriction is created and fractured in a single crystal tungsten rod with a long side parallel to the [100] direction. In the absence of dislocations, vacancies become the main defects in the constriction which breaks under the tensile stress of approximately 10 GPa, which is close to the theoretical fracture strength for an ideal monocrystalline tungsten. We propose that the vacancies are removed early in the tensile test by means of deformation annealing, creating a defect-free tungsten constriction which cleaves along the W(100) plane. This approach enables fabrication of new composite STM probes which demonstrate excellent stability, atomic resolution and magnetic contrast that cannot be attained using conventional methods.

Ultrafast reprogrammable multifunctional vanadium-dioxide-assisted metasurface for dynamic THz wavefront engineering

In this paper, for the first time, a new generation of ultrafast reprogrammable multi-mission bias encoded metasurface is proposed for dynamic terahertz wavefront engineering by employing VO2 reversible and fast monoclinic to tetragonal phase transition. The multi-functionality of our designed VO2 based coding metasurface (VBCM) was guaranteed by elaborately designed meta-atom comprising three-patterned VO2 thin films whose operational statuses can be dynamically tuned among four states of "00"-"11" by merely changing the biasing voltage controlled by an external Field-programmable gate array platform. Capitalizing on such meta-atom design and by driving VBCM with different spiral-like and spiral-parabola-like coding sequences, single vortex beam and focused vortex beam with interchangeable orbital angular momentum modes were satisfactorily generated respectively. Additionally, by adopting superposition theorem and convolution operation, symmetric/asymmetric multiple beams and arbitrarily-oriented multiple vortex beams in pre-demined directions with different topological charges are realized. Several illustrative examples successfully have clarified that the proposed VBCM is a promising candidate for solving crucial terahertz challenges such as high data rate wireless communication where ultrafast switching between several missions is required.

A Room-Temperature Verwey-type Transition in Iron Oxide, Fe5 O6

Functional oxides whose physicochemical properties may be reversibly changed at standard conditions are potential candidates for the use in next‐generation nanoelectronic devices. To date, vanadium dioxide (VO₂) is the only known simple transition‐metal oxide that demonstrates a near‐room‐temperature metal–insulator transition that may be used in such appliances. In this work, we synthesized and investigated the crystals of a novel mixed‐valent iron oxide with an unconventional Fe₅O₆ stoichiometry. Near 275 K, Fe₅O₆ undergoes a Verwey‐type charge‐ordering transition that is concurrent with a dimerization in the iron chains and a following formation of new Fe−Fe chemical bonds. This unique feature highlights Fe₅O₆ as a promising candidate for the use in innovative applications. We established that the minimal Fe−Fe distance in the octahedral chains is a key parameter that determines the type and temperature of charge ordering. This model provides new insights into charge‐ordering phenomena in transition‐metal oxides in general.

Low-Voltage-Manipulating Spin Dynamics of Flexible Fe3O4 Films through Ionic Gel Gating for Wearable Devices

Mechanical flexible electronic/spintronic devices have shown enormous application potential to impact our daily life. Here, an in situ low-voltage-controlled flexible field-effect transistor structure was exploited, which consists of a support layer (mica), functional layer (Fe₃O₄), and control layer (ionic gel). By applying a low voltage (1.5 V) on the ionic gel, the spin-dynamic properties of the function layer were manipulated and a reversible, nonvolatile 345 Oe ferromagnetic resonance field ( H_r) shift was achieved, which corresponds to a large magnetoelectric (ME) coefficient of 230 Oe/V. In addition, a reversible 126 Oe H_r shift (84 Oe/V) was obtained when the layers were bent at curvature radius r = 15 mm. The ME tunability could be attributed to the E-field induced ionic transformation between Fe²⁺ and Fe³⁺ at the interface via electrostatic induction. This sandwich structure shows an excellent and effective ionic gel gating system and paves the way for low-voltage-tunable, nonvolatile, and flexible spintronic devices such as memory devices, sensors, and logical devices.

Insulator-metal transition induced by electric voltage in a ruthenate Mott insulator

We report the observation of electric-voltage induced insulator-metal phase transition in a ruthenate Mott insulator Ca₃(Ru_0.9Ti_0.1)₂O₇. We show that the electric field effect dominates and leads to a sharp phase transition at measurement temperatures far below the Mott transition, whereas the thermal effect becomes more significant and broadens the phase transition as the measurement temperature approaches the insulator-metal transition. The electric field induced insulator-metal transition is presumably attributed to the avalanche breakdown of the correlated insulating state when driven out of equilibrium. This work highlights the strategy of using electric voltage to control the phase transition of this system in addition to other nonthermal parameters such as magnetic field and pressure reported previously.

Pressure tuning of charge ordering in iron oxide

A Verwey-type charge-ordering transition in magnetite at 120 K leads to the formation of linear units of three iron ions with one shared electron, called trimerons. The recently-discovered iron pentoxide (Fe₄O₅) comprising mixed-valent iron cations at octahedral chains, demonstrates another unusual charge-ordering transition at 150 K involving competing formation of iron trimerons and dimerons. Here, we experimentally show that applied pressure can tune the charge-ordering pattern in Fe₄O₅ and strongly affect the ordering temperature. We report two charge-ordered phases, the first of which may comprise both dimeron and trimeron units, whereas, the second exhibits an overall dimerization involving both the octahedral and trigonal-prismatic chains of iron in the crystal structure. We link the dramatic change in the charge-ordering pattern in the second phase to redistribution of electrons between the octahedral and prismatic iron chains, and propose that the average oxidation state of the iron cations can pre-determine a charge-ordering pattern.

The charge order transition of commonly known magnetite has only recently been unraveled. Here, the measurement of the low-temperature high-pressure phase diagram of a related material (Fe₄O₅) elucidates the interplay of average oxidation state and charge-ordering phenomena in the iron oxide family.

Microscopic Theory of Resistive Switching in Ordered Insulators: Electronic versus Thermal Mechanisms

We investigate the dramatic switch of resistance in ordered correlated insulators when they are driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main experimental features of resistive switching (RS), such as the hysteretic I-V curves and the formation of hot conductive filaments. The energy-resolved electron distribution at the RS reveals the underlying nonequilibrium electronic mechanism, namely Landau-Zener tunneling, and also justifies a thermal description in which the hot-electron temperature, estimated from the first moment of the distribution, matches the equilibrium-phase transition temperature. We discuss the tangled relationship between filament growth and negative differential resistance and the influence of crystallographic structure and disorder in the RS.

Hematite nanoparticle clusters with remarkably high magnetization synthesized from water-treatment waste by one-step “sharp high-temperature dehydration”

Hematite (α-Fe₂O₃) nanoparticle clusters with an exceptionally high magnetization of 51 emu g⁻¹ were synthesized for the first time. This material was prepared from water-treatment waste by a new “sharp high-temperature dehydration” process.

Tracking the Verwey Transition in Single Magnetite Nanocrystals by Variable-Temperature Scanning Tunneling Microscopy

Variable-temperature scanning tunneling spectroscopy revealed a sharp Verwey transition in individual ∼10 nm magnetite nanocrystals prepared by the coprecipitation technique and embedded in the surface of a gold film. The transition was observed as a significant change in the electronic structure around the Fermi level, with an apparent band gap of ∼140-250 meV appearing below the transition temperature and a pseudogap of ∼75 ± 10 meV appearing above it. The transition temperature was invariably observed around 101 ± 2 K for different nanocrystals, as opposed to 123 K typically reported for stoichiometric bulk crystals. This suggests that the lowering of the transition temperature is an intrinsic finite size effect, probably due to the presence of the surface.

One-step ligand exchange and switching from hydrophobic to water-stable hydrophilic superparamagnetic iron oxide nanoparticles by mechanochemical milling

Mechanochemistry permits rapid solvent-free exchange of surface ligands on superparamagnetic iron oxide nanoparticles (IONPs), enabling control of surface properties.

Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions

Magnetite is a half-metal with a high Curie temperature of 858 K, making it a promising candidate for magnetic tunnel junctions (MTJs). Yet, initial efforts to exploit its half metallic nature in Fe₃O₄/MgO/Fe₃O₄ MTJ structures have been far from promising. Finding suitable barrier layer materials, which keep the half metallic nature of Fe₃O₄ at the interface between Fe₃O₄ layers and barrier layer, is one of main challenges in this field. Two-dimensional (2D) materials may be good candidates for this purpose. Molybdenum disulfide (MoS₂) is a transition metal dichalcogenide (TMD) semiconductor with distinctive electronic, optical, and catalytic properties. Here, we show based on the first principle calculations that Fe₃O₄ keeps a nearly fully spin polarized electron band at the interface between MoS₂ and Fe₃O₄. We also present the first attempt to fabricate the Fe₃O₄/MoS₂/Fe₃O₄ MTJs. A clear tunneling magnetoresistance (TMR) signal was observed below 200 K. Thus, our experimental and theoretical studies indicate that MoS₂ can be a good barrier material for Fe₃O₄ based MTJs. Our calculations also indicate that junctions incorporating monolayer or bilayer MoS₂ are metallic.

Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects

Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrically driven metal-insulator transition based on the quantum tunneling theory. Here, we propose a method to experimentally support this explanation and provide a way to tune the critical switching parameter by introducing self-aligned localized impurities through the growth of Fe3O4 thin films on stepped SrTiO3 substrates. Anisotropic behavior in the RS was observed, where a lower switching voltage in the range of 10(4) V cm(-1) is required to switch Fe3O4 from a high conducting state to a low conducting state when the electrical field is applied along the steps. The anisotropic RS behavior is attributed to a high density array of anti-phase boundaries (APBs) formed at the step edges and thus are aligned along the same direction in the film which act as a train of hotspot forming conduits for resonant tunneling. Our experimental studies open an interesting window to tune the electrical-field-driven metal-insulator transition in strongly correlated systems.

Electronic phase transitions in ultrathin magnetite films

Magnetite (Fe3O4) shows singular electronic and magnetic properties, resulting from complex electron-electron and electron-phonon interactions that involve the interplay of charge, orbital and spin degrees of freedom. The Verwey transition is a manifestation of these interactions, with a puzzling connection between the low temperature charge ordered state and the dynamic charge fluctuations still present above the transition temperature. Here we explore how these rich physical phenomena are affected by thin film geometries, particularly focusing on the ultimate size limit defined by thicknesses below the minimum bulk unit cell. On one hand, we address the influence of extended defects, such as surfaces or antiphase domains, on the novel features exhibited by thin films. On the other, we try to isolate the effect of the reduced thickness on the electronic and magnetic properties. We will show that a distinct phase diagram and novel charge distributions emerge under reduced dimensions, while holding the local high magnetic moments. Altogether, thin film geometries offer unique possibilities to understand the complex interplay of short- and long-range orders in the Verwey transition. Furthermore, they arise as interesting candidates for the exploitation of the rich physics of magnetite in devices that demand nanoscale geometries, additionally offering novel functionalities based on their distinct properties with respect to the bulk form.

Size Dependence of Metal-Insulator Transition in Stoichiometric Fe₃O4₄Nanocrystals

Magnetite (Fe3O4) is one of the most actively studied materials with a famous metal-insulator transition (MIT), so-called the Verwey transition at around 123 K. Despite the recent progress in synthesis and characterization of Fe3O4 nanocrystals (NCs), it is still an open question how the Verwey transition changes on a nanometer scale. We herein report the systematic studies on size dependence of the Verwey transition of stoichiometric Fe3O4 NCs. We have successfully synthesized stoichiometric and uniform-sized Fe3O4 NCs with sizes ranging from 5 to 100 nm. These stoichiometric Fe3O4 NCs show the Verwey transition when they are characterized by conductance, magnetization, cryo-XRD, and heat capacity measurements. The Verwey transition is weakly size-dependent and becomes suppressed in NCs smaller than 20 nm before disappearing completely for less than 6 nm, which is a clear, yet highly interesting indication of a size effect of this well-known phenomena. Our current work will shed new light on this ages-old problem of Verwey transition.

Kinetics of the charge ordering in magnetite below the Verwey temperature

In this work the kinetics of the charge ordering in magnetite (Fe3O4) below the Verwey transition temperature TV is investigated in time and energy domain. After excitation by a one-second voltage pulse to destruct the charge-ordered state below TV, an alternating current (AC) is used to perturb its recovery process. Upon warming up to above a temperature T(r)(< TV) the charge order recovers despite the ac perturbation, because the temperature-dependent relaxation time becomes shorter than the polarity change of the ac. From the frequency dependence of T(r)(f), an activation energy of ΔE = 126 meV is extracted. Below Tr the real part of the ac conductance Greal follows the relation Greal ∼ f(α) with α = 0.98 ± 0.18, suggesting that the charge reordering is driven by correlated hopping transport. The relaxation time τ = 1/f(T(r)) of the charge-ordered state is determined for temperatures between 70 and 98 K and is extrapolated to τ(TV) = 1.6 ms, continuously slowing down its dynamics as the temperature is decreased.

Transition from direct to Fowler-Nordheim tunneling in chemically reduced graphene oxide film

We investigate charge transport in a chemically reduced graphene oxide (RGO) film of sub-micron thickness. The I-V curve of RGO film shows current switching of the order of ∼10(5) above the threshold voltage. We found that the observed I-V curve is consistent with quantum tunnelling based charge transport. The quantum tunnelling based Simmons generalized theory was used to interpret the charge transport mechanism which shows that the current switching phenomenon is associated with transition from direct to Fowler-Nordheim (F-N) tunneling. The absence of current switching in the I-V curve after stripping away the oxygen functional groups from chemically RGO film confirms that the presence of these groups and reduced interaction between adjacent layers of RGO play a key role in charge transport. Such metal-based current switching devices may find applications in graphene-based electronic devices such as high voltage resistive switching devices.

Magnetization states of all-oxide spin valves controlled by charge-orbital ordering of coupled ferromagnets

Charge-orbital ordering is commonly present in complex transition metal oxides and offers interesting opportunities for novel electronic devices. In this work, we demonstrate for the first time that the magnetization states of the spin valve can be directly manipulated by charge-orbital ordering. We investigate the interlayer exchange coupling (IEC) between two epitaxial magnetite layers separated by a nonmagnetic epitaxial MgO dielectric. We find that the state of the charge-orbital ordering in magnetite defines the strength, and even the sign of the IEC. First-principles calculations further show that the charge-orbital ordering modifies the spin polarized electronic states at the Fe₃O₄/MgO interfaces and results in a sufficiently large phase shift of wave function which are responsible for the observed IEC sign change across Verwey temperature. Our findings may open new interesting avenues for the electric field control of the magnetization states of spin valves via charge-orbital ordering driven IEC sign change.

Role of thermal heating on the voltage induced insulator-metal transition in VO2

We show that the main mechanism for the dc voltage or dc current induced insulator-metal transition in vanadium dioxide VO(2) is due to local Joule heating and not a purely electronic effect. This "tour de force" experiment was accomplished by using the fluorescence spectra of rare-earth doped micron sized particles as local temperature sensors. As the insulator-metal transition is induced by a dc voltage or dc current, the local temperature reaches the transition temperature indicating that Joule heating plays a predominant role. This has critical implications for the understanding of the dc voltage or dc current induced insulator-metal transition and has a direct impact on applications which use dc voltage or dc current to externally drive the transition.

Tunable threshold resistive switching characteristics of Pt-Fe2O3 core-shell nanoparticle assembly by space charge effect

Tunable threshold resistive switching characteristics of Pt-Fe(2)O(3) core-shell nanoparticle (NP) assembly were investigated. The colloidal Pt-Fe(2)O(3) core-shell NPs with a Pt core diameter of ∼3 nm and a total diameter of ∼15 nm were chemically synthesized by a one-step process. These NPs were assembled as a layer with a thickness of ∼80 nm by repeated dip-coating between Ti and Pt electrodes on a flexible polyethersulfone (PES) substrate. The Ti/NPs/Pt/PES structure exhibited the threshold switching, i.e. volatile transition from high to low resistance state at a high voltage and vice versa at a low voltage. The current-voltage measurements after charging and discharging NPs revealed that the resistance state and threshold switching voltage of the assembly could be tuned by the space charges stored in high density trap sites of Pt cores in Pt-Fe(2)O(3) core-shell NP assembly. These results demonstrated the possible tuning of threshold switching of core-shell NP assembly by the space charge effect, which can be potentially utilized for the tunable selection device element in nonvolatile memory circuits.

Strongly correlated materials

Strongly correlated materials are profoundly affected by the repulsive electron-electron interaction. This stands in contrast to many commonly used materials such as silicon and aluminum, whose properties are comparatively unaffected by the Coulomb repulsion. Correlated materials often have remarkable properties and transitions between distinct, competing phases with dramatically different electronic and magnetic orders. These rich phenomena are fascinating from the basic science perspective and offer possibilities for technological applications. This article looks at these materials through the lens of research performed at Rice University. Topics examined include: Quantum phase transitions and quantum criticality in "heavy fermion" materials and the iron pnictide high temperature superconductors; computational ab initio methods to examine strongly correlated materials and their interface with analytical theory techniques; layered dichalcogenides as example correlated materials with rich phases (charge density waves, superconductivity, hard ferromagnetism) that may be tuned by composition, pressure, and magnetic field; and nanostructure methods applied to the correlated oxides VO₂ and Fe₃O₄, where metal-insulator transitions can be manipulated by doping at the nanoscale or driving the system out of equilibrium. We conclude with a discussion of the exciting prospects for this class of materials.

First-order metal-insulator transition and infrared identification of shape-controlled magnetite nanocrystals

The first-order metal-insulator transition (MIT) in magnetite has been known for a long time but is still controversial in its nature. In this study, well-defined magnetite nanocrystals (NCs) with controllable size, shape and terminated surface are first employed to elucidate this important issue, and new discoveries such as a highly suppressed phase transition temperature are identified by monitoring the variable-temperature electric resistance and infrared spectroscopy. Significantly, by carefully comparing the infrared vibrational bands of the as-prepared magnetite NCs with octahedral and cubic shapes, respectively, we found that these two forms of magnetite NCs exhibited different transmittance changes and frequency shifts of the infrared characteristics, presumably due to the differences in the lattice distortions on the corresponding {001} and {111} terminal surfaces. This result produced evidence in support of the charge ordering of Fe atoms along the low dimensionality at octahedral B sites undergoing the MIT. Taken together, infrared identification was proposed to be an available characterization strategy for MIT, which can reflect more information on the elusive lattice distortion of crystallographic structure or exposed surfaces.

Memory and threshold resistance switching in Ni/NiO core-shell nanowires

We report on the first controlled alternation between memory and threshold resistance switching (RS) in single Ni/NiO core-shell nanowires by setting the compliance current (I(CC)) at room temperature. The memory RS is triggered by a high I(CC), while the threshold RS appears by setting a low I(CC), and the Reset process is achieved without setting a I(CC). In combination with first-principles calculations, the physical mechanisms for the memory and threshold RS are fully discussed and attributed to the formation of an oxygen vacancy (Vo) chain conductive filament and the electrical field induced breakdown without forming a conductive filament, respectively. Migration of oxygen vacancies can be activated by appropriate Joule heating, and it is energetically favorable to form conductive chains rather than random distributions due to the Vo-Vo interaction, which results in the nonvolatile switching from the off- to the on-state. For the Reset process, large Joule heating reorders the oxygen vacancies by breaking the Vo-Vo interactions and thus rupturing the conductive filaments, which are responsible for the switching from on- to off-states. This deeper understanding of the driving mechanisms responsible for the threshold and memory RS provides guidelines for the scaling, reliability, and reproducibility of NiO-based nonvolatile memory devices.

Nanostructure studies of strongly correlated materials

Strongly correlated materials exhibit an amazing variety of phenomena, including metal-insulator transitions, colossal magnetoresistance, and high temperature superconductivity, as strong electron-electron and electron-phonon couplings lead to competing correlated ground states. Recently, researchers have begun to apply nanostructure-based techniques to this class of materials, examining electronic transport properties on previously inaccessible length scales, and applying perturbations to drive systems out of equilibrium. We review progress in this area, particularly emphasizing work in transition metal oxides (Fe(3)O(4), VO(2)), manganites, and high temperature cuprate superconductors. We conclude that such nanostructure-based studies have strong potential to reveal new information about the rich physics at work in these materials.

Surface structural evolution in iron oxide thin films

Ordered iron oxide ultrathin films were fabricated on a single-crystal Mo(110) substrate under ultrahigh vacuum conditions by either depositing Fe in ambient oxygen or oxidizing preprepared Fe(110) films. The surface structure and electronic structure of the iron oxide films were investigated by various surface analytical techniques. The results indicate surface structural transformations from metastable FeO(111) and O-terminated Fe(2)O(3)(0001) to Fe(3)O(4)(111) films, respectively. The former depends strongly on the oxygen pressure and substrate temperature, and the latter relies mostly upon the annealing temperature. Our experimental observations are helpful in understanding the mechanisms of surface structural evolution in iron oxides. The model surfaces of Fe-oxide films, particularly O-terminated surfaces, can be used for further investigation in chemical reactions (e.g., in catalysis).

Electrically driven magnetic relaxation in multiferroic LuFe2O4

We report the electrical control of magnetization in multiferroic LuFe2O4 by applying short current pulses. The magnitude of the induced magnetization change depends on the pulse width and current density. The voltage variation during the applied current pulses evidences an electric-field-induced breakdown of charge order and excludes the role of Joule heating. This current driven magnetization change can be interpreted with a three-temperature model in which the delocalized electrons accelerate spin relaxation through a strong spin-charge coupling inherent to multiferroicity. The electrically assisted magnetic relaxation provides a new approach for electrical control of magnetization.

Strained arrays of colloidal nanoparticles: conductance and magnetoresistance enhancement

Colloidal nanoparticles are very popular as building blocks of functional arrays for electronic and optical applications. However, there is a problem in achieving electrical conductivity in such nanoarrays due to their molecular shells. These shells, which are inherent to colloidal particles, physically separate the nanoparticles in an array and act as very effective insulators. Post-assembly thinning of the shells is therefore required to enhance the array conductivity to a sensible value. Here, we introduce a conceptually new approach to the thinning, using compressive stress applied to the array by the supporting matrix. The stress arises from polymerization-induced shrinkage of the matrix as an integral step during device assembly. Using arrays of oleic-acid-covered magnetite nanoparticles in conjunction with an HDDA-polymer (HDDA: 1,6-hexanediol diacrylate) matrix, we have achieved a significant steady current in the array along with an unprecedented value of the magnetoresistance. Our results serve as a proof-of-concept for other colloidal nanoparticles.

Nanoparticle assemblies as memristors

Recently a memristor ( Chua, L. O. IEEE Trans. Circuit Theory 1971 , 18 , 507 ), the fourth fundamental passive circuit element, has been demonstrated as thin film device operations ( Strukov, D. B.; Snider, G. S.; Stewart, D. R.; Williams, R. S. Nature (London) 2008 , 453 , 80 ; Yang, J. J.; Pickett. M. D.; Li, X.; Ohlberg, D. A. A.; Stewart, D. R.; Williams, R. S. Nat. Nanotechnol. 2008 , 3 , 429 ). A new addition to the memristor family can be nanoparticle assemblies consisting of an infinite number of monodispersed, crystalline magnetite (Fe(3)O(4)) particles. Assembly of nanoparticles that have sizes below 10 nm, exhibits at room temperature a voltage-current hysteresis with an abrupt and large bipolar resistance switching (R(OFF)/R(ON) approximately 20). Interestingly, observed behavior could be interpreted by adopting an extended memristor model that combines both a time-dependent resistance and a time-dependent capacitance. We also observed that such behavior is not restricted to magnetites; it is a general property of nanoparticle assemblies as it was consistently observed in different types of spinel structured nanoparticles with different sizes and compositions. Further investigation into this new nanoassembly system will be of importance to the realization of the next generation nanodevices with potential advantages of simpler and inexpensive device fabrications.

Generic properties of Mn spinels with an immiscibility induced by a Jahn-Teller distortion

The generic properties are scrutinized in Mn spinels with an immiscibility induced by a Jahn-Teller distortion through the CoFe(2-x)Mn(x)O(4) system. The x-ray diffraction experiment reveals that the immiscibility occurs at 1.1<x<2.0 and the relevant kinetics becomes faster with x. The temperature of the Jahn-Teller transition, which accompanies a sharp resistivity anomaly and matches the immiscibility gap boundary, increases with increasing x. The evolution of the magnetic and structural properties with various thermal treatments is studied carefully in this paper. Based on our comprehensive results, we have constructed a phase diagram of CoFe(2-x)Mn(x)O(4).