Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals

Why do Si quantum dots with stronger fast emission have lower external photoluminescence quantum yield?

Silicon quantum dots (QDs) are a promising non-toxic alternative to the already well-developed platform of light-emitting semiconductor QDs based on III-V and II-VI materials. Oxidized SiQDs or those surface-terminated with long alkyl chains typically feature long-lived orange-red photoluminescence originating in quantum-confined core states. However, sometimes an additional short-lived PL band, whose mechanism is still highly debated, is reported. Here, we perform a detailed study of the room-temperature PL of SiQDs using samples covering three main fabrication techniques. We find evidence for the presence of only one set of radiative processes in addition to the typical long-lived PL. Moreover, we experimentally determine the ratio between the short- and long-lived PL component, obtaining a wide range of values (0.003 - 0.1) depending on the type of sample. In accordance with an already published report, we observe a tendency of SiQDs with stronger short-lived PL to have lower external quantum yield. We explain this trend using a model of the optical performance of an ensemble of QDs with widely varying optical characteristics through a mechanism we call selective lifetime-based quenching.

Surface charge-dependent cytokine production using near-infrared emitting silicon quantum dots

Toll-like receptor 9 (TLR-9) is a protein that helps our immune system identify specific DNA types. Upon detection, CpG oligodeoxynucleotides signal the immune system to generate cytokines, essential proteins that contribute to the body's defence against infectious diseases. Native phosphodiester type B CpG ODNs induce only Interleukin-6 with no effect on interferon-α. We prepared silicon quantum dots containing different surface charges, such as positive, negative, and neutral, using amine, acrylate-modified Plouronic F-127, and Plouronic F-127. Then, class B CpG ODNs are loaded on the surface of the prepared SiQDs. The uptake of ODNs varies based on the surface charge; positively charged SiQDs demonstrate higher adsorption compared to SiQDs with negative and neutral surface charges. The level of cytokine production in peripheral blood mononuclear cells was found to be associated with the surface charge of SiQDs prior to the binding of the CpG ODNs. Significantly higher levels of IL-6 and IFN-α induction were observed compared to neutral and negatively charged SiQDs loaded with CpG ODNs. This observation strongly supports the notion that the surface charge of SiQDs effectively regulates cytokine induction.

Photon-Momentum-Enabled Electronic Raman Scattering in Silicon Glass

The nature of enhanced photoemission in disordered and amorphous solids is an intriguing question. A point in case is light emission in porous and nanostructured silicon, a phenomenon that is still not fully understood. In this work, we study structural photoemission in heterogeneous cross-linked silicon glass, a material that represents an intermediate state between the amorphous and crystalline phases, characterized by a narrow distribution of structure sizes. This model system shows a clear dependence of photoemission on size and disorder across a broad range of energies. While phonon-assisted indirect optical transitions are insufficient to describe observable emissions, our experiments suggest these can be understood through electronic Raman scattering instead. This phenomenon, which is not commonly observed in crystalline semiconductors, is driven by structural disorder. We attribute photoemission in this disordered system to the presence of an excess electron density of states within the forbidden gap (Urbach bridge) where electrons occupy trapped states. Transitions from gap states to the conduction band are facilitated through electron-photon momentum matching, which resembles Compton scattering but is observed for visible light and driven by the enhanced momentum of a photon confined within the nanostructured domains. We interpret the light emission in structured silicon glass as resulting from electronic Raman scattering. These findings emphasize the role of photon momentum in the optical response of solids that display disorder on the nanoscale.

Luminescent Mechanism and Anti-Counterfeiting Application of Hydrophilic, Undoped Room-Temperature Phosphorescent Silicon Nanocrystals

Silicon nanocrystals (SiNCs) have attracted extensive attention in many advanced applications due to silicon's high natural abundance, low toxicity, and impressive optical properties. However, these applications are mainly focused on fluorescent SiNCs, little attention is paid to SiNCs with room-temperature phosphorescence (RTP) and their relative applications, especially water-dispersed ones. Herein, this work presents water-dispersible RTP SiNCs (UA-SiNCs) and their optical applications. The UA-SiNCs with a uniform particle size of 2.8 nm are prepared by thermal hydrosilylation between hydrogen-terminated SiNCs (H-SiNCs) and 10-undecenoic acid (UA). Interestingly, the resultant UA-SiNCs can exhibit tunable long-lived RTP with an average lifetime of 0.85 s. The RTP feature of the UA-SiNCs is confirmed to the n-π* transitions of their surface C═O groups. Subsequently, new dual-modal emissive UA-SiNCs-based ink is fabricated by blending with sodium alginate (SA) as the binder. The customized anticounterfeiting labels are also prepared on cellulosic substrates by screen-printing technique. As expected, UA-SiNCs/SA ink exhibits excellent practicability in anticounterfeiting applications. These findings will trigger the rapid development of RTP SiNCs, envisioning enormous potential in future advanced applications such as high-level anti-counterfeiting, information encryption, and so forth.

Single-atom infrared emission in doped silicon nanocrystals

Silicon luminescence, due to silicon being abundant, non-toxic and harmless, is a topic of pivotal importance in optoelectronics and biological imaging. However, a major challenge in developing high-efficiency silicon light sources is the relatively weak allowable transitions. This study focuses on single atom-doped silicon nanocrystals (Si NCs) and theoretically investigates the emission behavior of single atoms within a tetrahedral coordination field. Doping a single atom in Si NCs can result in a ∼102 times improvement at least in the squared transition dipole moment (TDM2), and induce a spectral shift towards near- and mid-infrared wavelengths. These findings offer a strong foundation for designing Si NCs for on-chip optical communication and single photon emitters.

The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield. However, the complete physical picture of Si-QD luminescence is not yet clear and needs to be studied in depth. In this work, which considers the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands were calculated based on first principles calculations. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QD interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size of the Si-QD increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining a high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. This study deepens the understanding of the photoluminescence mechanism of Si-QDs, and provides a direction for both future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.

Nanocomposites of Silicon Oxides and Carbon: Its Study as Luminescent Nanomaterials

In this work, hybrid structures formed by nanostructured layers, which contain materials, such as porous silicon (PSi), carbon nanotubes (CNTs), graphene oxide (GO), and silicon-rich oxide (SRO), were studied. The PSi layers were obtained by electrochemical etching over which CNTs and GO were deposited by spin coating. In addition, SRO layers, in which silicon nanocrystals are embedded, were obtained by hot filament chemical vapor deposition (HFCVD) technique. Photoluminescence (PL) spectra were obtained from the hybrid structures with which a comparative analysis was completed among different PL ones. The SRO layers were used to confine the CNTs and GO. The main purpose of making these hybrid structures is to modulate their PL response and obtain different emission energy regions in the PL response. It was found that the PL spectra of the CNTs/SRO and GO/SRO structures exhibit a shift towards high energies compared to those obtained from the PSi layers; likewise, the PSi/CNTs/SRO and PSi/GO/SRO structures show a similar behavior. To identify the different emission mechanisms originated by PSi, GO, CNTs, and SRO, the PL spectra were deconvolved. It was found that the Psi/CNTs/SRO and Psi/GO/SRO structures exhibit a PL shift in respect to the PSi layers, for this reason, the modulation of the PL emission of the structures makes these hybrid structures promising candidates to be applied in the field of photonic and electroluminescent devices.

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO₂) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO₂ (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron-hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

Resonance Coupling in Si@WS2Core-Ω Shell Nanostructure

Realizing strong laser-matter interaction in a heterostructure consisting of two-dimensional transition metal dichalcogenides (TMDCs) and an optical nanocavity is a potential strategy for novel photonic devices. In this paper, two core-Ω shell nanostructures, Si@WS₂ core-Ω shell nanostructure on glass/Si substrates, are briefly introduced. A strong laser-matter interaction occurred in the Si@WS₂ core-Ω shell nanostructure when it was excited by femtosecond (fs) laser in the near-infrared-1 region (NIR-1, 650 nm-950 nm), resulting in a resonance coupling between the electric dipole resonance (EDR) of the Si nanosphere (NS) and the exciton resonance of the WS₂ nanomembrane (NMB). The generation of resonance coupling regulates the resonant mode of the nanostructure to realize the multi-dimensional nonlinear optical response, which can be utilized in the fields of biological imaging and nanoscale light source.

Highly efficient nonlinear optical emission from a subwavelength crystalline silicon cuboid mediated by supercavity mode

The low quantum efficiency of silicon (Si) has been a long-standing challenge for scientists. Although improvement of quantum efficiency has been achieved in porous Si or Si quantum dots, highly efficient Si-based light sources prepared by using the current fabrication technooloy of Si chips are still being pursued. Here, we proposed a strategy, which exploits the intrinsic excitation of carriers at high temperatures, to modify the carrier dynamics in Si nanoparticles. We designed a Si/SiO₂ cuboid supporting a quasi-bound state in the continuum (quasi-BIC) and demonstrated the injection of dense electron-hole plasma via two-photon-induced absorption by resonantly exciting the quasi-BIC with femtosecond laser pulses. We observed a significant improvement in quantum efficiency by six orders of magnitude to ~13%, which is manifested in the ultra-bright hot electron luminescence emitted from the Si/SiO₂ cuboid. We revealed that femtosecond laser light with transverse electric polarization (i.e., the electric field perpendicular to the length of a Si/SiO₂ cuboid) is more efficient for generating hot electron luminescence in Si/SiO₂ cuboids as compared with that of transverse magnetic polarization (i.e., the magnetic field perpendicular to the length of a Si/SiO₂ cuboid). Our findings pave the way for realizing on-chip nanoscale Si light sources for photonic integrated circuits and open a new avenue for manipulating the luminescence properties of semiconductors with indirect bandgaps.

Enhancing the efficiency of quantum emitters is essential for exploring new functionalities. Here the authors show Si cuboids that sustain bound states in the continuum enable the injection of dense electron-hole plasma and provide high quantum efficiency.

Multiple exciton generation in isolated and interacting silicon nanocrystals

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems. For optimal energy conversion in photovoltaic devices, one important requirement is that the full energy of the solar spectrum is effectively used. In this context, the possibility of exploiting features and functionalities induced by the reduced dimensionality of the nanocrystalline phase, in particular by the quantum confinement of the electronic density, can lead to a better use of the carrier excess energy and thus to an increment of the thermodynamic conversion efficiency of the system. Carrier multiplication, i.e. the generation of multiple electron-hole pairs after absorption of one single high-energy photon (with energy at least twice the energy gap of the system), can be exploited to maximize cell performance, promoting a net reduction of loss mechanisms. Over the past fifteen years, carrier multiplication has been recorded in a large variety of semiconductor nanocrystals and other nanostructures. Owing to the role of silicon in solar cell applications, the mission of this review is to summarize the progress in this fascinating research field considering carrier multiplication in Si-based low-dimensional systems, in particular Si nanocrystals, both from the experimental and theoretical point of view, with special attention given to the results obtained by ab initio calculations.

Luminescent silicon nanoparticles for distinctive tracking of cellular targeting and trafficking

Developing therapeutic nanoparticles that actively target disease cells or tissues by exploiting the binding specificity of receptors presented on the cell surface has extensively opened up biomedical applications for drug delivery and imaging. An ideal nanoparticle for biomedical applications is required to report confirmation of relevant targeting and the ultimate fate in a physiological environment for further verification, e.g. to adapt dosage or predict response. Herein, we demonstrate tracking of silicon nanoparticles through intrinsic photoluminescence (PL) during the course of cellular targeting and uptake. Time-resolved analysis of PL characteristics in cellular microenvironments provides dynamic information on the physiological conditions where the silicon nanoparticles are exposed. In particular, the PL lifetime of the silicon nanoparticles is in the order of microseconds, which is significantly longer than the nanosecond lifetimes exhibited by fluorescent molecules naturally presented in cells, thus allowing discrimination of the nanoparticles from the cellular background autofluorescence in time-gated imaging. The PL lifetime is a physically intensive property that reports the inherent characteristics of the nanoparticles regardless of surrounding noise. Furthermore, we investigate a unique means to inform the lifespan of the biodegradable silicon nanoparticles responsive to local microenvironment in the course of endocytosis. A multivalent strategy of nanoparticles for enhanced cell targeting is also demonstrated with complementary analysis of time-resolved PL emission imaging and fluorescence correlation spectroscopy. The result presents the promising potential of the photoluminescent silicon nanoparticles toward advanced cell targeting systems that simultaneously enable tracking of cellular trafficking and tissue microenvironment monitoring.

Crystalline silicon nanoparticle formation by tailored plasma irradiation: self-structurization, nucleation and growth acceleration, and size control

Crystalline silicon nanoparticles at the nanometer scale have been attracting great interest in many different optoelectronic applications such as photovoltaic and light-emitting-diode devices. Formation, crystallization, and size control of silicon nanoparticles in nonharsh and nontoxic environments are highly required to achieve outstanding optoelectronic characteristics. The existing methods require high temperature, use of HF solution, and an additional process for the uniform redistribution of nanoparticles on the substrate and there are difficulties in controlling the size. Herein, we report a new self-assembly method that applies the controlled extremely low plasma ion energy near the sputtering threshold energy in rare gas environments as nonharsh and nontoxic environments. This method produces silicon nanoparticles by crystallization nucleation directly at the surface of the amorphous film via plasma surface interactions. It is evidently observed that the nucleation and growth rates of the crystalline silicon nanoparticles are promoted by the enhanced plasma ion energy. The crystalline silicon nanoparticle size is tailored to the nanometer scale by the plasma ion energy control.

Crystalline Silicon White Light Sources Driven by Optical Resonances

Silicon (Si) is generally considered as a poor photon emitter, and various scenarios have been proposed to improve the photon emission efficiency of Si. Here, we report the observation of a burst of the hot electron luminescence from Si nanoparticles with diameters of 150-250 nm, which is triggered by the exponential increase of the carrier density at high temperatures. We show that the stable white light emission above the threshold can be realized by resonantly exciting either the mirror-image-induced magnetic dipole resonance of a Si nanoparticle placed on a thin silver film or the surface lattice resonance of a regular array of Si nanopillars with femtosecond laser pulses of only a few picojoules, where significant enhancements in two- and three-photon-induced absorption can be achieved. Our findings indicate the possibility of realizing all-Si-based nanolasers with manipulated emission wavelength, which can be easily incorporated into future integrated optical circuits.

Band-Gap Tunability in Partially Amorphous Silicon Nanoparticles Using Single-Dot Correlative Microscopy

Silicon nanoparticles (Si-NPs) represent one of many types of nanomaterials, where the origin of emission is difficult to assess due to a complex interplay between the core and surface chemistry. Band-gap tunability in Si-NPs is predicted to span from the infrared to the ultraviolet spectral range, which is rarely observed in practice. In this work, we directly assess the size dependence of the optical band gap using a single-dot correlative microscopy tool, where the size of the individual NPs is measured using atomic force microscopy (AFM) and the optical band gap is evaluated from single-dot photoluminescence measured on the very same NPs. We analyze 2-8 nm alkyl-capped Si-NPs prepared by a sol-gel method, followed by annealing at 1300 °C. Surprisingly, we find that the optical band gap is given by the amorphous shell, as evidenced by the convergence of the optical band gap size dependence toward the amorphous Si band gap of ∼1.56 eV. We propose that the structural disorder might be the reason behind the often reported limited emission tunability from various Si-NPs in the literature. We believe that our message points toward a pressing need for development and broader use of such direct correlative single-dot microscopy methods to avoid possible misinterpretations that could arise from attempts to recover size-band gap relation from ensemble methods, as practiced nowadays.

Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is fundamental to study the ultrafast processes involving the photogenerated charges separation, migration and lifetime after the optical excitation. Ultrafast time-resolved optical measurements provide such information. In the present paper, we report on the relaxation dynamics of photogenerated charge-carriers in ultrafine SiNS synthesized by means of inductively-coupled-plasma process. The carriers' transient regime was characterized in high fluence regime by using a tunable pump photon energy and a broadband probe pulse with a photon energy ranging from 1.2 eV to 2.8 eV while varying the energy of the pump photons and their polarization. The SiNS consist of Si nanospheres and nanowires (NW) with a crystalline core embedded in a SiO_x outer-shell. The NW inner core presents different typologies: long silicon nanowires (SiNW) characterized by a continuous core (with diameters between 2 nm and 15 nm and up to a few microns long), NW with disconnected fragments of SiNW (each fragment with a length down to a few nanometers), NW with a "chaplet-like" core and NW with core consisting of disconnected spherical Si nanocrystals. Most of these SiNS are asymmetric in shape. Our results reveal a photoabsorption (PA) channel for pump and probe parallel polarizations with a maximum around 2.6 eV, which can be associated to non-isotropic ultra-small SiNS and ascribed either to (i) electron absorption driven by the probe from some intermediate mid-gap states toward some empty state above the bottom of the conduction band or (ii) the Drude-like free-carrier presence induced by the direct-gap transition in the their band structure. Moreover, we pointed up the existence of a broadband and long-living photobleaching (PB) in the 1.2-2.0 eV energy range with a maximum intensity around 1.35 eV which could be associated to some oxygen related defect states present at the Si/SiO_x interface. On the other hand, this wide spectral energy PB can be also due to both silicon oxide band-tail recombination and small Si nanostructure excitonic transition.

Low temperature radical initiated hydrosilylation of silicon quantum dots

The photophysics of silicon quantum dots (QDs) is not well understood despite their potential for many optoelectronic applications. One of the barriers to the study and widespread adoption of Si QDs is the difficulty in functionalizing their surface, to make, for example, a solution-processable electronically-active colloid. While thermal hydrosilylation of Si QDs is widely used, the high temperature typically needed may trigger undesirable side-effects, like uncontrolled polymerization of the terminal alkene. In this contribution, we show that this high-temperature method for installing aromatic and aliphatic ligands on non-thermal plasma-synthesized Si QDs can be replaced with a low-temperature, radical-initiated hydrosilylation method. Materials prepared via this low-temperature route perform similarly to those created via high-temperature thermal hydrosilylation when used in triplet fusion photon upconversion systems, suggesting the utility of low-temperature, radical-initiated methods for creating Si QDs with a range of functional behavior.

The red and blue luminescence in silicon nanocrystals with an oxidized, nitrogen-containing shell

Traditionally, two classes of silicon nanocrystals (SiNCs) are recognized with respect to their light-emission properties. These are usually referred to as the "red" and the "blue" emitting SiNCs, based on the spectral region in which the larger part of their luminescence is concentrated. The origin of the "blue" luminescence is still disputed and is very probably different in different systems. One of the important contributions to the discussion about the origin of the "blue" luminescence was the finding that the exposure of SiNCs to even trace amounts of nitrogen in the presence of oxygen induces the "blue" emission, even in originally "red"-emitting SiNCs. Here, we obtained a different result. We show that the treatment of "red" emitting, already oxidized SiNCs in a water-based environment containing air-related radicals including nitrogen-containing species as well as oxygen, diminishes, rather than induces the "blue" luminescence.

Tight-binding calculations of the optical properties of Si nanocrystals in a SiO2 matrix

We develop an empirical tight binding approach for the modeling of the electronic states and optical properties of Si nanocrystals embedded in a SiO2 matrix. To simulate the wide band gap SiO2 matrix we use the virtual crystal approximation. The tight-binding parameters of the material with the diamond crystal lattice are fitted to the band structure of β-cristobalite. This model of the SiO2 matrix allows us to reproduce the band structure of real Si nanocrystals embedded in a SiO2 matrix. In this model, we compute the absorption spectra of the system. The calculations are in an excellent agreement with experimental data. We find that an important part of the high-energy absorption is defined by the spatially indirect, but direct in k-space transitions between holes inside the nanocrystal and electrons in the matrix.

Bright Silicon Nanocrystals from a Liquid Precursor: Quasi-Direct Recombination with High Quantum Yield

Silicon nanocrystals (SiNCs) with bright bandgap photoluminescence (PL) are of current interest for a range of potential applications, from solar windows to biomedical contrast agents. Here, we use the liquid precursor cyclohexasilane (Si₆H₁₂) for the plasma synthesis of colloidal SiNCs with exemplary core emission. Through size separation executed in an oxygen-shielded environment, we achieve PL quantum yields (QYs) approaching 70% while exposing intrinsic constraints on efficient core emission from smaller SiNCs. Time-resolved PL spectra of these fractions in response to femtosecond pulsed excitation reveal a zero-phonon radiative channel that anticorrelates with QY, which we model using advanced computational methods applied to a 2 nm SiNC. Our results offer additional insight into the photophysical interplay of the nanocrystal surface, quasi-direct recombination, and efficient SiNC core PL.

Emerging Atomic Energy Levels in Zero-Dimensional Silicon Quantum Dots

Driven by the emergence of colloidal semiconductor quantum dots (QDs) of tunable emission wavelengths, characteristic of exciton absorption peaks, outstanding photostability and solution processability in device fabrication have become a key tool in the development of nanomedicine and optoelectronics. Diamond cubic crystalline silicon (Si) QDs, with a diameter larger than 2 nm, terminated with hydrogen atoms are known to exhibit bulk-inherited spin and valley properties. Herein, we demonstrate a newly discovered size region of Si QDs, in which a fast radiative recombination on the order of hundreds of picoseconds is responsible for photoluminescence (PL). Despite retaining a crystallographic structure like the bulk, controlling their diameters in the 1.1-1.7 nm range realizes the strong PL with continuous spectral tunability in the 530-580 nm window, the narrow spectral line widths without emission tails, and the fast relaxation of photogenerated carriers. In contrast, QDs with diameters greater than 1.8 nm display the decay times on the microsecond order as well as the previous Si QDs. In addition to the five-orders-of-magnitude variation in the PL decay time, a systematic study on the temperature dependence of PL properties suggests that the energy structure of the smaller QDs does not retain an indirect band gap character. It is discussed that a 1.7 nm diameter is critical to undergo changes in energy structure from bulky to molecular configurations.

All-inorganic silicon white light-emitting device with an external quantum efficiency of 1.0

With low toxicity and high abundance of silicon, silicon nanocrystal (Si-NC) based white light-emitting device (WLED) is expected to be an alternative promising choice for general lighting in a cost-effective and environmentally friendly manner. Therefore, an all-inorganic Si-NC based WLED was reported for the first time in this paper. The active layer was made by mixing freestanding Si-NCs with hydrogen silsesquioxane (HSQ), followed by annealing and preparing the carrier transport layer and electrodes to complete the fabrication of an LED. Under forward biased condition, the electroluminescence (EL) spectrum of the LED showed a broadband spectrum. It was attributed to the mechanism of differential passivation of Si-NCs. The performance of LED could be optimized by modifying the annealing temperature and ratio of Si-NCs to HSQ in the active layer. The external quantum efficiency (EQE) peak of the Si WLED was 1.0% with a corresponding luminance of 225.8 cd/m², and the onset voltage of the WLED was 2.9V. The chromaticity of the WLED indicated a warm white light emission.

Boosting interfacial charge transfer and electricity generation for levofloxacin elimination in a self-driven bio-driven photoelectrocatalytic system

Recently, molybdenum disulfide (MoS2) has stimulated significant research interest as a promising electrode candidate in solar cells and energy conservation fields. Unfortunately, the short lower electron/hole migration lifetimes and easy agglomeration hamper its wide practical applications to some extent. Herein, interface engineering coupled with a bio-assisted photoelectrochemical (PEC) strategy is presented to construct a 0D MoS2 quantum dot (QD)/1D TiO2 nanotube electrode for pollutant elimination. Aimed at accelerating charge transfer over the 0D/1D composite interface, three types of coupling PEC models were developed to optimize the catalytic performance. The single chamber microbial fuel cell (SCMFC)-PEC integrated system was found to be the best alternative for levofloxacin (LEV) elimination (0.029 min-1), and the sequential SCMFC-PEC further realized the whole system self-running independently. In addition, the interfacial electron migration and LEV degradation pathways were thoroughly investigated by LC/TOF/MS coupled with density functional theory (DFT) calculations to clearly elucidate the electron transfer paths, LEV-attacked sites and mineralization pathways in a joint sequential SCMFC-PEC system. As such, the constructed self-recycling system provides a new platform for bio-photo-electrochemical utilization, which could exhibit promising potential in environmental purification.

Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix

In the empirical tight-binding approach we study the electronic states in spherical SiGe nanocrystals embedded in SiO₂ matrix. For the SiGe alloy and the matrix we use the virtual crystal approximation. The energy and valley structure of electron states is obtained as a function of Ge composition and nanocrystal size. Calculations show that the mixing of hot electrons in the nanocrystal with the electrons in wide band gap matrix is possible and this mixing strongly depends on the Ge composition in the nanocrystal.

Nitrogen-terminated silicon nanoparticles obtained via chemical etching and passivation are specific fluorescent probes for creatinine

A method is described here to prepare water-dispersible nitrogen-functionalized silicon nanoparticles (N-SiNPs). It consists of two steps, viz. etching of the oxidized shell of SiNPs and nitrogen-passivation of the exposed silicon. The resulting N-SiNPs have an average diameter of 2.6±0.7 nm and show blue fluorescence (with excitation/emission peaks at 340/420 nm). The fluorescence quantum yield is 23% and the decay time is in the nanosecond regime. Compared to etching methods using a plasma or hydrofluoric acid, the process described here (etching and passivation) is mild, continuous, fast, and air-compatible. The N-SiNPs modified with chlorotetracycline are shown to be a viable fluorescent probe for creatinine. Fluorescence drops in the 0 to 20 μM creatinine concentration range, and the limit of detection is 0.14 μM.

Beyond quantum confinement: excitonic nonlocality in halide perovskite nanoparticles with Mie resonances

Halide perovskite nanoparticles have demonstrated pronounced quantum confinement properties for nanometer-scale sizes and strong Mie resonances for 102 nm sizes. Here we studied the intermediate sizes where the nonlocal response of the exciton affects the spectral properties of Mie modes. The mechanism of this effect is associated with the fact that excitons in nanoparticles have an additional kinetic energy that is proportional to k2, where k is the wavenumber. Therefore, they possess higher energy than in the case of static excitons. The obtained experimental and theoretical results for MAPbBr3 nanoparticles of various sizes (2-200 nm) show that for particle radii comparable with the Bohr radius of the exciton (a few nanometers in perovskites), the blue-shift of the photoluminescence, scattering, and absorption cross-section peaks related to quantum confinement should be dominating due to the weakness of Mie resonances for such small sizes. On the other hand, for larger sizes (more than 50-100 nm), the influence of Mie modes increases, and the blue shift remains despite the fact that the effect of quantum confinement becomes much weaker.

Tuning Electroluminescence from a Plasmonic Cavity-Coupled Silicon Light Source

The combination of Moore's law and Dennard's scaling rules have constituted the fundamental guidelines for the silicon-based semiconductor industry for decades. Furthermore, the enormous growth of global data volume has pushed the demand for complex and densely packed devices. In recent years, it has become clear that wired interconnects impose increasingly severe speed and power limitations onto integrated circuits as scaling slows toward a halt. To overcome these limitations, there is a clear need for optical data processing. Despite significant progress in the development of silicon photonics, light sources remain challenging owing to the indirect bandgap of group IV materials. It is therefore highly desirable to develop new concepts for a silicon light source that meets efficiency and footprint requirements similar to their electronic counterparts. Here, we demonstrate an electrically driven and tunable silicon light source by matching the resonant modes of a silver nanocavity with the hot luminescence spectrum of an avalanching p-n junction. The cavity significantly enhances phonon-assisted recombination of hot carriers by tailoring the local density of states at the size-tunable resonance. Such tunable nanoscale emitter may be of great interest for short-reach communications, microdisplays or lab-on-chip applications.

Semiconductor Nanocrystal Light Absorbers for Photon Upconversion

Semiconductor nanocrystals (NCs) can initiate energy and charge transfer in multiple applications with their unique optical and electronic properties. In particular, NCs are excellent light absorbers for initiating triplet energy transfer (TET) to organic molecules, a key step in triplet-fusion-based photon upconversion. Triplet energy transfer across this inorganic-organic interface is one of the bottlenecks that currently limits the overall photon upconversion quantum yield. In this Perspective, we summarize the progress made in the past three years on this hybrid photon upconversion platform. We discuss the effects of NC size, composition, and surface states on TET. Nanocrystal surface engineering may address the loss mechanisms arising from defect states and exciton-phonon coupling. Alternative materials for NC triplet photosensitizers that do not contain toxic heavy metals will be especially useful for various biological applications.

Lighting up silicon nanoparticles with Mie resonances

As one of the most important semiconductors, silicon has been used to fabricate electronic devices, waveguides, detectors, solar cells, etc. However, the indirect bandgap and low quantum efficiency (10-7) hinder the use of silicon for making good emitters. For integrated photonic circuits, silicon-based emitters with sizes in the range of 100-300 nm are highly desirable. Here, we show the use of the electric and magnetic resonances in silicon nanoparticles to enhance the quantum efficiency and demonstrate the white-light emission from silicon nanoparticles with feature sizes of ~200 nm. The magnetic and electric dipole resonances are employed to dramatically increase the relaxation time of hot carriers, while the magnetic and electric quadrupole resonances are utilized to reduce the radiative recombination lifetime of hot carriers. This strategy leads to an enhancement in the quantum efficiency of silicon nanoparticles by nearly five orders of magnitude as compared with bulk silicon, taking the three-photon-induced absorption into account.

One-Step Synthesis of Ultrasmall and Ultrabright Organosilica Nanodots with 100% Photoluminescence Quantum Yield: Long-Term Lysosome Imaging in Living, Fixed, and Permeabilized Cells

Water-dispersible nanomaterials with superbright photoluminescence (PL) emissions and narrow PL bandwidths are urgently desired for various imaging applications. Herein, for the first time, we prepared ultrasmall organosilica nanodots (OSiNDs) with an average size of ∼2.0 nm and ∼100% green-emitting PL quantum efficiency via a one-step hydrothermal treatment of two commercial reagents (a silane molecule and rose bengal). In particular, the structural reorganization and halide loss of rose bengal during the hydrothermal treatment contribute to the ultrahigh quantum yield and low phototoxicity of OSiNDs. Owing to their low pH-induced precipitation/aggregation property, the as-prepared OSiNDs can be used as excellent lysosomal trackers with many advantages: (1) They have superior lysosomal targeting ability with a Pearson's coefficient of 0.98; (2) The lysosomal monitoring time of OSiNDs is up to 48 h, which is much longer than those of commercial lysosomal trackers (<2 h); (3) They do not disturb the pH environment of lysosomes and can be used to visualize lysosomes in living, fixed, and permeabilized cells; (4) They exhibit intrinsic lysosomal tracking ability without the introduction of lysosome-targeting ligands (such as morpholine) and superior photostability; (5) The easy, cost-effective, and scalable synthetic method further ensures that these OSiNDs can be readily used as exceptional lysosomal trackers. We expect that the ultrasmall OSiNDs with superior fluorescence properties and easily modifiable surfaces could be applied as fluorescent nanoprobes, light-emitting diode phosphor, and anticounterfeiting material, which should be able to promote the preparation and application of silicon-containing nanomaterials.

Correlation between luminescence and structural evolution of colloidal silicon nanocrystals synthesized under different laser fluences

We present a detailed investigation of the structural evolution and photoluminescence (PL) properties of colloidal silicon (Si) nanocrystals (NCs) synthesized through femtosecond laser ablation at different laser fluences. It is shown that the mean size of colloidal Si NCs increases from ∼0.97-2.37 nm when increasing laser fluence from 1.0-2.5 mJ cm^-2. On the basis of structural characterization, temperature-dependent PL, time-resolved PL, and PL excitation spectra, we identify that the size-dependent spectral shift of violet emission is attributed to the quantum confinement effect. The localized excitons' radiative recombination via the oxygen-related surface states on the surface of the colloidal Si NCs is employed to explain the origin of the blue emission.

Nanoscale Generation of White Light for Ultrabroadband Nanospectroscopy

Achieving efficient localization of white light at the nanoscale is a major challenge due to the diffraction limit, and nanoscale emitters generating light with a broadband spectrum require complicated engineering. Here we suggest a simple, yet highly efficient, nanoscale white-light source based on a hybrid Si/Au nanoparticle with ultrabroadband (1.3-3.4 eV) spectral characteristics. We incorporate this novel source into a scanning-probe microscope and observe broadband spectrum of photoluminescence that allows fast mapping of local optical response of advanced nanophotonic structures with submicron resolution, thus realizing ultrabroadband near-field nanospectroscopy.

Curved surface effect and manipulation of electronic states in nanosilicon

It is interesting in low-dimensional nanostructures of silicon that the two quantum effects play different roles in nanosilicon emission, in which the quantum confinement (QC) effect opens band gap and makes emission shift into shorter wavelengths (blue-shift) as the size of the nanocrystals is reduced; however the breaking symmetry originating from impurities on nanosilicon produces the localized electronic states in band gap and makes emission shift into longer wavelengths (red-shift). The results of experiment and calculation demonstrated that the energy levels of nanosilicon can be manipulated through these quantum effects, where the curved surface (CS) effect of impurity atoms bonding on nanosilicon is important in breaking symmetry of nanosilicon system. Here, the CS effect plays an important role on impuritied nanosilicon in smaller scale with larger surface curvature, in which a few characteristic parameters have been found to describe the breaking symmetry of nanosilicon system, such as bonding angle and projecting length of bonds on curved surface. More interesting, the coupling ways between the QC effect and the CS effect determinate the levels position of localized states in band gap and manipulate emission wavelength, where a few new phenomena were explored.

Fabrication of photoluminescent nc-Si:SiO2 thin films prepared by PLD

In the present report, the structural, compositional, morphological, and photoluminescence properties of nanostructured non-stoichiometric silicon oxide (nc-Si:SiO₂ or SiO_x) thin films fabricated by pulsed-laser ablation of silicon in the presence of oxygen pressure, from 10^-4 to 0.5 mbar, are presented. X-ray diffraction spectra and Raman spectra confirmed the formation of nanocrystalline Si within the films while electron diffraction X-ray spectroscopy confirmed the increase in oxygen content with increasing O₂ pressure. Scanning electron microscopy images of the SiO_x films showed spreading of the micron-sized clusters on the otherwise uniform background, while Raman maps confirm the presence of nanocrystalline Si in these clusters embedded in a uniform matrix comprising oxidized amorphous silicon. A systematic blue shift in the band gap energy from 1.55 to 2.80 eV was observed with increasing O₂ pressure in the SiO_x films due to a shift in the stoichiometry of the films from x = 0.03 to 2.14 respectively. The films with higher oxygen content exhibited broad and intense PL emissions with multiple peaks originating from quantum confined (QC) Si nanocrystals as well as oxygen defects like NBOH and V_O centers. The variation in PL intensity as a function of excitation intensity displays an initial linear increase followed by saturation, a characteristic feature of emissions from QC nc-Si.

Abrupt Size Partitioning of Multimodal Photoluminescence Relaxation in Monodisperse Silicon Nanocrystals

Intrinsic constraints on efficient photoluminescence (PL) from smaller alkene-capped silicon nanocrystals (SiNCs) put limits on potential applications, but the root cause of such effects remains elusive. Here, plasma-synthesized colloidal SiNCs separated into monodisperse fractions reveal an abrupt size-dependent partitioning of multilevel PL relaxation, which we study as a function of temperature. Guided by theory and simulation, we explore the potential role of resonant phonon interactions with "minigaps" that emerge in the electronic density of states (DOS) under strong quantum confinement. Such higher-order structures can be very sensitive to SiNC surface chemistry, which we suggest might explain the common implication of surface effects in both the emergence of multimodal PL relaxation and the loss of quantum yield with decreasing nanocrystal size. Our results have potentially profound implications for optimizing the radiative recombination kinetics and quantum yield of smaller ligand-passivated SiNCs.

Probing silicon quantum dots by single-dot techniques

Silicon nanocrystals represent an important class of non-toxic, heavy-metal free quantum dots, where the high natural abundance of silicon is an additional advantage. Successful development in mass-fabrication, starting from porous silicon to recent advances in chemical and plasma synthesis, opens up new possibilities for applications in optoelectronics, bio-imaging, photovoltaics, and sensitizing areas. In this review basic physical properties of silicon nanocrystals revealed by photoluminescence spectroscopy, lifetime, intensity trace and electrical measurements on individual nanoparticles are summarized. The fabrication methods developed for accessing single Si nanocrystals are also reviewed. It is concluded that silicon nanocrystals share many of the properties of direct bandgap nanocrystals exhibiting sharp emission lines at low temperatures, on/off blinking, spectral diffusion etc. An analysis of reported results is provided in comparison with theory and with direct bandgap material quantum dots. In addition, the role of passivation and inherent interface/matrix defects is discussed.

Slow cooling and highly efficient extraction of hot carriers in colloidal perovskite nanocrystals

Hot-carrier solar cells can overcome the Shockley-Queisser limit by harvesting excess energy from hot carriers. Inorganic semiconductor nanocrystals are considered prime candidates. However, hot-carrier harvesting is compromised by competitive relaxation pathways (for example, intraband Auger process and defects) that overwhelm their phonon bottlenecks. Here we show colloidal halide perovskite nanocrystals transcend these limitations and exhibit around two orders slower hot-carrier cooling times and around four times larger hot-carrier temperatures than their bulk-film counterparts. Under low pump excitation, hot-carrier cooling mediated by a phonon bottleneck is surprisingly slower in smaller nanocrystals (contrasting with conventional nanocrystals). At high pump fluence, Auger heating dominates hot-carrier cooling, which is slower in larger nanocrystals (hitherto unobserved in conventional nanocrystals). Importantly, we demonstrate efficient room temperature hot-electrons extraction (up to ∼83%) by an energy-selective electron acceptor layer within 1 ps from surface-treated perovskite NCs thin films. These insights enable fresh approaches for extremely thin absorber and concentrator-type hot-carrier solar cells.

Harvesting excess energy from above-band gap photons could lead to solar cells which exceed conventional efficiency limits. Li et al., study hot carrier cooling in hybrid perovskite materials with reduced dimensionality using transient absorption spectroscopy and demonstrate efficient hot-electron extraction in such systems.

The temperature behavior and mechanism of exciton luminescence in quantum dots

The luminescence and energy parameters of confined excitons depend on the dimensional and structural factors in QDs.

Long-lived luminescence of silicon nanocrystals: from principles to applications

Understanding parameters affecting the luminescence of silicon nanocrystals will guide the design of improved systems for a plethora of applications.

Solvent-Induced Luminescence Variation of Upconversion Nanoparticles

Solvent plays a vital role in the syntheses, purifications, and broad applications of upconversion nanoparticles (UCNPs). In this work, the effect of various dispersive solvents, including single solvents and mixed solvents, on the luminescence properties of NaYF₄:Yb³⁺, Er³⁺ UCNPs was studied systematically. The differences in both upconversion luminescence (UCL) intensities and color outputs of the nanoparticles were observed when dispersing the UCNPs in deuterium oxide, dimethylformamide (DMF), dimethyl sulfoxide (DMSO), ethanol, or water. The attenuation of the excitation and emission light of the UCNPs caused by absorption of the solvents, as well as the high-frequency vibrational groups of the solvents, such as -OH, -CH₂, and -CH₃ groups, are responsible for the decrease in UCL intensities and increase in the red to green emission intensity ratios (RGR). The changes in water or OH^- ion contents of ethanol/water mixed solvent triggered similar changes in UCL properties. Interestingly, the quenching of the solvents for the UCL cannot be fully eliminated by changing the dispersive solvents once the UCNPs have touched the solvents containing high-frequency vibrational groups. Our work will facilitate the comprehension of the solvent induced luminescence variations of the nanoparticles and provide guidance for their applications.

Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer

It is reported that the silicon nanocrystals (NCs) are fabricated by using self-assembly growth method with the annealing and the electron beam irradiation processes in the pulsed laser depositing, on which the visible lasing with higher gain (over 130 cm-1) and the enhanced emission in optical telecommunication window are measured in photoluminescence (PL). It is interesting that the enhanced visible electroluminescence (EL) on silicon nanocrystals (Si-NCs) is obviously observed by the naked eyes, and the light-emitting diode (LED) of the Si-NCs with external quantum efficiency of 20% is made on silicon chip in our laboratory. A four-level system is built for emission model in nanosilicon, in which the PL and EL measurement and transmission electron microscope (TEM) analysis demonstrate that the pumping levels with shorter lifetime from the rising energy of the Si quantum dots due to the quantum confinement effect occur, and the electronic localized states with longer lifetime owing to impurities bonding on Si-NCs surface are formed in the crystallized process to produce the inversion of population for lasing, where the optical gain is generated.

Evolution and Engineering of Precisely Controlled Ge Nanostructures on Scalable Array of Ordered Si Nano-pillars

The scalable array of ordered nano-pillars with precisely controllable quantum nanostructures (QNs) are ideal candidates for the exploration of the fundamental features of cavity quantum electrodynamics. It also has a great potential in the applications of innovative nano-optoelectronic devices for the future quantum communication and integrated photon circuits. Here, we present a synthesis of such hybrid system in combination of the nanosphere lithography and the self-assembly during heteroepitaxy. The precise positioning and controllable evolution of self-assembled Ge QNs, including quantum dot necklace(QDN), QD molecule(QDM) and quantum ring(QR), on Si nano-pillars are readily achieved. Considering the strain relaxation and the non-uniform Ge growth due to the thickness-dependent and anisotropic surface diffusion of adatoms on the pillars, the comprehensive scenario of the Ge growth on Si pillars is discovered. It clarifies the inherent mechanism underlying the controllable growth of the QNs on the pillar. Moreover, it inspires a deliberate two-step growth procedure to engineer the controllable QNs on the pillar. Our results pave a promising avenue to the achievement of desired nano-pillar-QNs system that facilitates the strong light-matter interaction due to both spectra and spatial coupling between the QNs and the cavity modes of a single pillar and the periodic pillars.

Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals

In this work we report on temperature-dependent photoluminescence measurements (15–300 K), which have allowed probing radiative transitions and understanding of the appearance of various transitions. We further demonstrate that transitions associated with oxide in SiNCs show characteristic vibronic peaks that vary with surface characteristics. In particular we study differences and similarities between silicon nanocrystals (SiNCs) derived from porous silicon and SiNCs that were surface-treated using a radio-frequency (RF) microplasma system.