Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

Electrostatic control of transconductance oscillations in MoS2/WSe2heterostructure

The progression of quantum phenomena aligns closely with the miniaturization of nano-semiconductor transistors. This necessitates innovative quantum structures beyond traditional transistor types. Investigating electrostatically defined nanoscale devices within two-dimensional (2D) semiconductor heterostructures, particularly van der Waals heterostructures offers advantages like large-scale uniformity and flexibility. Here, we focus on the charge transport of a MoS2/WSe2encapsulated heterostructure controlled by a split-gate configuration, revealing a distinctive step-like current profile at a low temperature of 77 K. The observed distinguishable regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the device is also investigated to understand the role of thermal effects on the observed electrostatic-controlled transconductance oscillations phenomenon. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures in narrow regimes. It holds promise for developing future integrated electronic devices based on 2D semiconducting nanomaterials with tailored confinement and enhanced functionalities.

Self-Powered Broadband Photodetectors Based on WS2-Anchored MoS2 with Enhanced Responsivity and Detectivity

Self-powered broadband photodetectors utilizing 2D transition metal dichalcogenides (TMDs) are highly promising due to their remarkable light absorption capabilities and high sensitivity, making them suitable for applications such as military surveillance and wireless light detection systems. However, their performance is constrained by inadequate absorption, suboptimal charge carrier separation, and slow response times. In response to these limitations, the study fabricates a self-powered photodetector employing a heterostructure composed of WS2 nanoparticles anchored to CVD-synthesized MoS2, operating within the visible to near-infrared spectrum. The device demonstrates a responsivity of 283 mA W-1 and a detectivity 6.44 × 1012 Jones, alongside an external quantum efficiency of 61% under exposure of 580 nm. In comparison to pristine MoS2, the MoS2-WS2 photodetector exhibited approximately 12-fold and 11-fold enhancements in responsivity and detectivity, respectively, in addition to fast response time of ≈375 µs and 6 ms. Additionally, density functional theory (DFT) calculations are used to analyze the increase in dark current that is observed following WS₂ nanoparticle anchored on MoS₂. This investigation highlights the potential of 2D heterostructures in the development of high-performance broadband photodetectors, which offer improved responsivity, stability, and self-powered operation for advanced optoelectronic applications.

Multi-parameter control of photodetection in van der Waals magnet CrSBr

Photodetectors equipped with multi-parameter control hold the potential to deliver exceptional performance in a wide range of scenarios, paving the way for developing novel spin-opto-electronic devices. Nevertheless, the integration of such capabilities within a single device is challenging due to the necessity of harmonizing multiple materials with varying degrees of freedom. In this study, we introduce the van der Waals magnet CrSBr, featuring inherent anisotropy and distinctive spin-electronic coupling, to this realm. The linear dichroic ratio of the photocurrent in CrSBr tunneling device can reach ~60 at 1.65 K, and the photoresponse experiences a significant boost with increasing magnetic field. Additionally, the unique spin-charge coupling engenders a photon energy-dependent photocurrent that is modulated by an external field and is validated by first-principle calculations. Our findings elucidate the effective multi-parameter control of photodetection based on vdWs magnet CrSBr, highlighting its potential applications in cutting-edge optoelectronic devices and as a highly sensitive probe medium.

Molecular precursors for the electrodeposition of 2D-layered metal chalcogenides

Two-dimensional transition metal dichalcogenides (TMDCs) are highly anisotropic, layered semiconductors, with the general formula ME2 (M = metal, E = sulfur, selenium or tellurium). Much current research in this field focusses on TMDCs for catalysis and energy applications; they are also attracting great interest for next-generation transistor and optoelectronic devices. The latter high-tech applications place stringent requirements on the stoichiometry, crystallinity, morphology and electronic properties of monolayer and few-layer materials. As a solution-based process, wherein the material grows specifically on the electrode surface, electrodeposition offers great promise as a readily scalable, area-selective growth process. This Review explores the state-of-the-art for TMDC electrodeposition, highlighting how the choice of precursor (or precursors), solvent and electrode designs, with novel 'device-ready' electrode geometries, influence their morphologies and properties, thus enabling the direct growth of ultrathin, highly anisotropic 2D TMDCs and much scope for future advances.

High Electrical Conductance in Magnetic Emission Junction of Fe3GeTe2/ZnO/Ni Heterostructure via Selective Spin Emission through ZnO Ohmic Barrier

The insulator is essential for magnetic tunneling junction (MTJ) that increases magnetoresistance (MR) by decoupling magnetization directions between two ferromagnets. However, wide bandgap tunnel barrier blocks the thermionic emission of electrons, significantly reducing electrical conductance through MTJ. Here, a magnetic emission junction (MEJ) is demonstrated for the first time using an Fe3GeTe2 (FGT)/ZnO/Ni heterostructure with very high electrical conductance. The conduction band of ZnO (electron affinity 4.6 eV) aligns with Fermi levels (EF) of FGT (4.47 eV) and Ni (4.58 eV) ferromagnets and forms an Ohmic barrier, enabling free spin-electron emission through ZnO barrier and high electrical conductance. In contrast to the typical positive MR in MTJ by majority spin tunneling, negative MR is observed in FGT/ZnO/Ni MEJ. The minority spin electrons of Ni, with maximum states near the EF, are dominantly emitted to FGT over the ZnO barrier, while majority spin electrons of Ni, with maximum states below the EF, are blocked by it. In the FGT/FGT/ZnO/Ni heterostructure, the MR ratio is further increased by combining positive and negative MR at the MTJ (FGT/FGT) and MEJ (FGT/ZnO/Ni), respectively. As a result, FGT-MEJ exhibits 10-1000 orders higher conductance than other 2D-MTJs, while MR ratio remains similar to other 2D-MTJs.

Engineering Steep Subthreshold Swings in High-Performance Organic Field-Effect Transistor Sensors

Organic field-effect transistor (OFET)-based sensors have gained considerable attention for information perception and processing in developing artificial intelligent systems owing to their amplification function and multiterminal regulation. Over the last few decades, extensive research has been conducted on developing OFETs with steep subthreshold swings (SS) to achieve high-performance sensing. In this review, based on an analysis of the critical factors that are unfavorable for a steep SS in OFETs, the corresponding representative strategies for achieving steep SS are summarized, and the advantages and limitations of these strategies are comprehensively discussed. Furthermore, a bridge between SS and OFET sensor performance is established. Subsequently, the applications of OFETs with steep SS in sensor systems, including pressure sensors, photosensors, biochemical sensors, and electrophysiological signal sensors. Lastly, the challenges faced in developing OFET sensors with steep SS are discussed. This study provides insights into the design and application of high-performance OFET sensor systems.

Tunable electronic and optical properties of BAs/InS heterojunction based on first-principles calculations

The geometric structure, electronic properties, and optical characteristics of BAs/InS heterostructures are investigated in the present study through the first-principles calculations of Density Functional Theory. The analysis shows that H1-stacking BAs/InS heterostructures with an interlayer distance of 3.6 Å have excellent stability compared with monolayer materials. Furthermore, this heterostructure is classified as a Type-II heterostructure, which promotes the formation of photo-generated electron-hole pairs. The band alignment, direction and magnitude of electronic transfer in BAs/InS heterostructures can be fine-tuned by applying the external electric field and stress, which can also induce a transition from Type-II to Type-I behavior, the indirect bandgap to direct bandgap also occurs. Moreover, absorption coefficient of the heterostructure can also be moderately enhanced and adjusted by external electric fields and stress. These findings suggest that BAs/InS heterostructures have potential applications in photoelectric detectors and laser technology.

Supercapacitively Liquid-Solid Dual-State Optoelectronics

Photo-transduction of solid-state optoelectronics occurs in semiconductors or their interfaces. Considering the confined active area and interfacial capacitance of solid-state materials, solid-state optoelectronics faces inherent limitations in photo-transduction, especially for bionic vision, and the performance is lower than that of living systems. For example, a photoreceptor generates pA-level photocurrent when absorbing a single photon. Here, a liquid-solid dual-state phototransistor is demonstrated, in which photo-transduction and modulation take place at the microporous interface between semiconductors and water, mimicking principles of the photoreceptor. When operating in the water, an orderly stacked photo-harvesting covalent organic framework layer generates supercapacitively photogating modulation of the channel conductivity via a dual-state interface, achieving responsivity of 4.6 × 1010 A W-1 and detectivity of 1.62 × 1016 Jones at room temperature, several orders of magnitude higher than other photodetectors. Such bio-inspired dual-state optoelectronics enables high-contrast scotopic neuromorphic imaging with responsivity greater than photoreceptors, holding promise for constructing optoelectronic systems with performance beyond conventional solid-state optoelectronics.

Simultaneous Characterization of In-Plane and Cross-Plane Resistivities in Highly Anisotropic 2D Layered Heterostructures

Understanding and characterizing the intrinsic properties of charge carrier transport across the interfaces in van der Waals heterostructures is critical to their applications in modern electronics, thermoelectrics, and optoelectronics. However, there are very few published cross-plane resistivity measurements of thin samples because these inherently 2-probe measurements must be corrected for contact and lead resistances. Here, we present a method to extract contact resistances and metal lead resistances by fitting the width dependence of the contact end voltages of top and bottom electrodes of different contact widths to a model based on current crowding. These contributions are then subtracted from the total 2-probe cross-plane resistance to obtain the cross-plane resistance of the material itself without needing multiple devices and/or etching steps. This approach was used to measure cross-plane resistivities of a (PbSe)1(VSe2)1 heterostructure containing alternating layers of PbSe and VSe2 with random in-plane rotational disorder. Several samples measured exhibited a 4 order of magnitude difference between cross-plane and in-plane resistivities over the 6-300 K temperature range. We also reported the observation of charge density wave transition in the cross-plane transport of the (PbSe)1(VSe2)1 heterostructure. The device fabrication process is fully liftoff compatible, and the method developed enables the straightforward measurement of the resistivity anisotropy of most thin film materials with nm thicknesses.

First-principles guidelines to select promising van der Waals materials for hybrid photovoltaic-triboelectric nanogenerators

Photovoltaic (PV) devices play a key role in solar-to-electricity energy conversion at small and large scales; unfortunately, their efficiency heavily depends on optimal weather and environmental conditions. The optimal scenario would be to extend the capabilities of PV devices so that they are also able to harvest energy from environmental sources other than light. An optimal solution is represented by hybrid photovoltaic-triboelectric (PV-TENG) devices which have both photovoltaic and triboelectric capabilities for electric power generation. Two-dimensional transition metal dichalcogenides (TMDs) are highly promising candidates for such PV-TENG devices, thanks to the easy tunability of their electrical, optical, mechanical, and chemical properties. In this respect, we here propose a quantum mechanical study to identify suitable TMD-based chemical compositions with optimal photovoltaic and triboelectric generation properties. Among the considered materials, we identify MoTe2/WS2, MoS2/WSe2, WS2/TiO2, WS2/IrO2, and MoS2/WTe2 as the most promising bilayer compositions; under operative conditions, the band gap varies in the range 0.51-1.61 eV, ensuring the photovoltaic activity, while the relative motion of the layers may produce an electromotive force between 1.21 and 3.21 V (triboelectric generation) with a TMD/TMD interface area equal to about 200 Å2. The results constitute theoretical guidelines on how to check if specific chemical compositions of TMD bilayers are optimal for a combined photovoltaic and triboelectric power generation. Thanks to its generality, the presented approach can be promptly extended to van der Waals heterostructures other than those here considered and implemented in automated workflows for the search of novel low-dimensional materials with target PV and TENG response.

Van Hove Singularity-Enhanced Raman Scattering and Photocurrent Generation in Twisted Monolayer-Bilayer Graphene

Twisted monolayer-bilayer graphene (TMBG) has recently emerged as an exciting platform for exploring correlated physics and topological states with rich tunability. Strong light-matter interaction was realized in twisted bilayer graphene, boosting the development of broadband graphene photodetectors from the visible to infrared spectrum with high responsivity. Extending this approach to the case of TMBG will help design advanced quantum nano-optoelectronic devices because of the reduced symmetry of the system. Here, we observe the formation of van Hove singularities (VHSs) in TMBG by monitoring the significant enhancement of the Raman intensity of the G peak and the intensity ratio of G and 2D peaks. The strong interlayer coupling also leads to the appearance of twist-angle-dependent Raman R and R' peaks in TMBG. Furthermore, the constructed graphene photodetectors from 13.5°-TMBG show significantly enhanced photoresponsivity (∼31 folds of monolayer graphene and ∼15 folds of trilayer graphene) when the energy of incident photons matches the interval energy between the two VHSs in the conduction and valence bands. Our findings establish TMBG as a tunable platform for investigating the light-matter interaction and designing high-performance graphene photodetectors with combined high responsivity and high selectivity.

Large-scale sub-5-nm vertical transistors by van der Waals integration

Vertical field effect transistor (VFET), in which the semiconductor is sandwiched between source/drain electrodes and the channel length is simply determined by the semiconductor thickness, has demonstrated promising potential for short channel devices. However, despite extensive efforts over the past decade, scalable methods to fabricate ultra-short channel VFETs remain challenging. Here, we demonstrate a layer-by-layer transfer process of large-scale indium gallium zinc oxide (IGZO) semiconductor arrays and metal electrodes, and realize large-scale VFETs with ultra-short channel length and high device performance. Within this process, the oxide semiconductor could be pre-deposited on a sacrificial wafer, and then physically released and sandwiched between metals, maintaining the intrinsic properties of ultra-scaled vertical channel. Based on this lamination process, we realize 2 inch-scale VFETs with channel length down to 4 nm, on-current over 800 A/cm2, and highest on-off ratio up to 2 × 105, which is over two orders of magnitude higher compared to control samples without laminating process. Our study not only represents the optimization of VFETs performance and scalability at the same time, but also offers a method of transfer large-scale oxide arrays, providing interesting implication for ultra-thin vertical devices.

Efficient Charge Transfer in Graphene/CrOCl Heterostructures by van der Waals Interfacial Coupling

Due to the large volume of exposed atoms and electrons at the surface of two-dimensional materials, interfacial charge coupling has been proven as an efficient strategy to engineer the electronic structures of two-dimensional materials assembled in van der Waals heterostructures. Recently, heterostructures formed by graphene stacked with CrOCl have demonstrated intriguing quantum states, including a distorted quantum Hall phase in the monolayer graphene and the unconventional correlated insulator in the bilayer graphene. Yet, the understanding of the interlayer charge coupling in the heterostructure remains challenging. Here, we demonstrate clear evidences of efficient hole doping in the interfacial-coupled graphene/CrOCl heterostructure by detailed Raman spectroscopy and electrical transport measurements. The observation of significant blue shifts and stiffness of graphene Raman modes quantitatively determines the concentration of hole injection of about 1.2 × 1013 cm-2 from CrOCl to graphene, which is highly consistent with the enhanced conductivity of graphene. First-principles calculations based on density functional theory reveal that due to the large work function difference and the electronegativity of Cl atoms in CrOCl, the electrons are efficiently transferred from graphene to CrOCl, leading to hole doping in graphene. Our findings provide clues for understanding the exotic physical properties of graphene/CrOCl heterostructures, paving the way for further engineering of quantum electronic states by efficient interfacial charge coupling in van der Waals heterostructures.

Acousto-Drag Photovoltaic Effect by Piezoelectric Integration of Two-Dimensional Semiconductors

Light-to-electricity conversion is crucial for energy harvesting and photodetection, requiring efficient electron-hole pair separation to prevent recombination. Traditional junction-based mechanisms using built-in electric fields fail in nonbarrier regions. Homogeneous material harvesting under a photovoltaic effect is appealing but is only realized in noncentrosymmetric systems via a bulk photovoltaic effect. Here we report the realization of a photovoltaic effect by employing surface acoustic waves (SAWs) to generate zero-bias photocurrent in the conventional layered semiconductor MoSe2. SAWs induce periodic modulation to electronic bands and drag the photoexcited pairs toward the traveling direction. The photocurrent is extracted from a local barrier. The separation of generation and extraction processes suppresses recombination and yields a large nonlocal photoresponse. We distinguish the acousto-electric drag and electron-hole pair separation effect by fabricating devices of different configurations. The acousto-drag photovoltaic effect, enabled by piezoelectric integration, offers an efficient light-to-electricity conversion method, independent of semiconductor crystal symmetry.

Multimodal Artificial Synapses for Neuromorphic Application

The rapid development of neuromorphic computing has led to widespread investigation of artificial synapses. These synapses can perform parallel in-memory computing functions while transmitting signals, enabling low-energy and fast artificial intelligence. Robots are the most ideal endpoint for the application of artificial intelligence. In the human nervous system, there are different types of synapses for sensory input, allowing for signal preprocessing at the receiving end. Therefore, the development of anthropomorphic intelligent robots requires not only an artificial intelligence system as the brain but also the combination of multimodal artificial synapses for multisensory sensing, including visual, tactile, olfactory, auditory, and taste. This article reviews the working mechanisms of artificial synapses with different stimulation and response modalities, and presents their use in various neuromorphic tasks. We aim to provide researchers in this frontier field with a comprehensive understanding of multimodal artificial synapses.

The Rise of Xene Hybrids

Xenes, mono-elemental atomic sheets, exhibit Dirac/Dirac-like quantum behavior. When interfaced with other 2D materials such as boron nitride, transition metal dichalcogenides, and metal carbides/nitrides/carbonitrides, it enables them with unique physicochemical properties, including structural stability, desirable bandgap, efficient charge carrier injection, flexibility/breaking stress, thermal conductivity, chemical reactivity, catalytic efficiency, molecular adsorption, and wettability. For example, BN acts as an anti-oxidative shield, MoS2 injects electrons upon laser excitation, and MXene provides mechanical flexibility. Beyond precise compositional modulations, stacking sequences, and inter-layer coupling controlled by parameters, achieving scalability and reproducibility in hybridization is crucial for implementing these quantum materials in consumer applications. However, realizing the full potential of these hybrid materials faces challenges such as air gaps, uneven interfaces, and the formation of defects and functional groups. Advanced synthesis techniques, a deep understanding of quantum behaviors, precise control over interfacial interactions, and awareness of cross-correlations among these factors are essential. Xene-based hybrids show immense promise for groundbreaking applications in quantum computing, flexible electronics, energy storage, and catalysis. In this timely perspective, recent discoveries of novel Xenes and their hybrids are highlighted, emphasizing correlations among synthetic parameters, structure, properties, and applications. It is anticipated that these insights will revolutionize diverse industries and technologies.

Quasi-Van der Waals Epitaxial Growth of γ'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates

GaSe is an important member of the post-transition-metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single-crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates by using molecular beam epitaxy. It yields smooth thin GaSe films with a rare γ'-polymorph. We analyze the formation mechanism of γ'-GaSe using density-functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ'-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/three-dimensional (3D) quasi-van der Waals epitaxial growth.

Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials

The explosive growth of massive-data storage and the demand for ultrafast data processing require innovative memory devices with exceptional performance. 2D materials and their van der Waal heterostructures with atomically sharp interfaces hold great promise for innovations in memory devices. Here, this work presents non-volatile, floating-gate memory devices with all functional layers made of 2D materials, achieving ultrafast programming/erasing speeds (20 ns), high extinction ratios (up to 108), and multi-bit storage capability. These devices also exhibit long-term data retention exceeding 10 years, facilitated by a high gate-coupling ratio (GCR) and atomically sharp interfaces between functional layers. Additionally, this work demonstrates the realization of an "OR" logic gate on a single-device unit by synergistic electrical and optical operations. The present results provide a solid foundation for next-generation ultrahigh-speed, ultralong lifespan, non-volatile memory devices, with a potential for scale-up manufacturing and flexible electronics applications.

Spectrometer-Less Remote Sensing Image Classification Based on Gate-Tunable van der Waals Heterostructures

Remote sensing technology, which conventionally employs spectrometers to capture hyperspectral images, allowing for the classification and unmixing based on the reflectance spectrum, has been extensively applied in diverse fields, including environmental monitoring, land resource management, and agriculture. However, miniaturization of remote sensing systems remains a challenge due to the complicated and dispersive optical components of spectrometers. Here, m-phase GaTe0.5Se0.5 with wide-spectral photoresponses (250-1064 nm) and stack it with WSe2 are utilizes to construct a two-dimensional van der Waals heterojunction (2D-vdWH), enabling the design of a gate-tunable wide-spectral photodetector. By utilizing the multi-photoresponses under varying gate voltages, high accuracy recognition can be achieved aided by deep learning algorithms without the original hyperspectral reflectance data. The proof-of-concept device, featuring dozens of tunable gate voltages, achieves an average classification accuracy of 87.00% on 6 prevalent hyperspectral datasets, which is competitive with the accuracy of 250-1000 nm hyperspectral data (88.72%) and far superior to the accuracy of non-tunable photoresponse (71.17%). Artificially designed gate-tunable wide-spectral 2D-vdWHs GaTe0.5Se0.5/WSe2-based photodetector present a promising pathway for the development of miniaturized and cost-effective remote sensing classification technology.

Exploring the effect of the covalent functionalization in graphene-antimonene heterostructures

The growing field of two-dimensional (2D) materials has recently witnessed the emergence of heterostructures, however those combining monoelemental layered materials remain relatively unexplored. In this study, we present the chemical fabrication and characterization of a heterostructure formed by graphene and hexagonal antimonene. The interaction between these 2D materials is thoroughly examined through Raman spectroscopy and first-principles calculations, revealing that this can be considered as a van der Waals heterostructure. Furthermore, we have explored the influence of the antimonene 2D material on the reactivity of graphene by studying the laser-induced covalent functionalization of the graphene surface. Our findings indicate distinct degrees of functionalization based on the underlying material, SiO2 being more reactive than antimonene, opening the door for the development of controlled patterning in devices based on these heterostructures. This covalent functionalization implies a high control over the chemical information that can be stored but also removed on graphene surfaces, and its use as a patterned heterostructure based on antimonene and graphene. This research provides valuable insights into the antimonene-graphene interactions and their impact on the chemical reactivity during graphene covalent functionalization.

Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions

Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.

Superior Visible Photoelectric Response with Au/Cu2NiSnS4 Core-Shell Nanocrystals

The incorporation of plasmonic metal nanostructures into semiconducting chalcogenides in the form of core-shell structures provides a promising approach to enhancing the performance of photodetectors. In this study, we combined Au nanoparticles with newly developed copper-based chalcogenides Cu2NiSnS4 (Au/CNTS) to achieve an ultrahigh optoelectronic response in the visible regime. The high-quality Au/CNTS core-shell nanocrystals (NCs) were synthesized by developing a unique colloidal hot-injection method, which allowed for excellent control over sizes, shapes, and elemental compositions. The as-synthesized Au/CNTS hybrid core-shell NCs exhibited enhanced optical absorption, carrier extraction efficiency, and improved photosensing performance owing to the plasmonic-induced resonance energy transfer effect of the Au core. This effect led to a significant increase in the carrier density of the Au/CNTS NCs, resulting in a measured responsivity of 1.2 × 103 AW-1, a specific detectivity of 6.2 × 1011 Jones, and an external quantum efficiency of 3.8 × 105 % at an incident power density of 318.5 μW cm-2. These results enlighten a new era in the development of plasmonic core-shell nanostructure-based visible photodetectors.

A strategy for boosting photovoltaic performance based on a two-dimensional ZrSSe/HfSSe van der Waals heterostructure

Identifying high-efficiency solar photovoltaic systems with two-dimensional (2D) materials is still an urgent challenge to meet modern energy requirements. Very recently, a 2D heterostructure with type-II band alignment has been confirmed to be more favorable for application in photoelectric conversion. However, the staggered band offset of 2D type-II heterostructures cannot always be guaranteed, nor the intrinsic hindrance mechanism of carrier recombination being clear. In this study, taking the emerging ZrSSe/HfSSe van der Waals heterostructure (vdWH) as a generic example, a boosting strategy for improving the photoelectric performances of 2D vdWHs is proposed. Through a series of in-depth systematic research studies based on first-principles, we demonstrate that via applying a vertical strain, an anticipated band alignment transition from type-I to favorable type-II of this ZrSSe/HfSSe vdWH can be induced due to the interfacial charge redistribution, during which a corresponding enlarged photocurrent can be detected from the latter based device compared to the former. Essentially, such enhanced photocurrent at the incident photon energy (Eph) around the band gap is attributed to the suppressed recombination rate of photoexcited carriers. Moreover, when Eph is increased into the visible light region, the photoelectric conversion performances can be further controlled by vertical strain. These generalized findings not only provide an effective manipulation strategy for enhancing the performances of 2D solar photovoltaic systems, but the intrinsic physical mechanism can also be extended to the next practical design and regulation of other 2D photovoltaic devices.

Probing the multi-disordered nanoscale alloy at the interface of lateral heterostructure of MoS2-WS2

Transition metal dichalcogenide (TMDs) heterostructure, particularly the lateral heterostructure of two different TMDs, is gaining attention as ultrathin photonic devices based on the charge transfer (CT) excitons generated at the junction. However, the characteristics of the interface of the lateral heterostructure, determining the electronic band structure and alignment at the heterojunction region, have rarely been studied due to the limited spatial resolution of nondestructive analysis systems. In this study, we investigated the confined phonons resulting from the phonon-disorder scattering process involving multiple disorders at the lateral heterostructure interface of MoS2-WS2 to prove the consequences of disorder-mediated deformation in the band structure. Moreover, we directly observed variations in the metal composition of the multi-disordered nanoscale alloy Mo1-x W x S2, consisting of atomic vacancies, crystal edges, and distinct nanocrystallites. Our findings through tip-enhanced Raman spectroscopy (TERS) imply that a tens of nanometer area of continuous TMDs alloy forms the multi-disordered interface of the lateral heterostructure. The results of this study could present the way for the evaluation of the TMDs lateral heterostructure for excitonic applications.

Technology and Integration Roadmap for Optoelectronic Memristor

Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.

PdSe2/MoSe2: a promising van der Waals heterostructure for field effect transistor application

The field-effect transistor (FET) is a fundamental component of semiconductors and the electronic industry. High on-current and mobility with layer-dependent features are required for outstanding FET channel material. Two-dimensional materials are advantageous over bulk materials owing to their higher mobility, high ON/OFF ratio, low tunneling current, and leakage problems. Moreover, two-dimensional heterostructures provide a better way to tune electrical properties. In this work, the two distinct possibilities of PdSe2/MoSe2heterostructure have been employed through mechanical exfoliation and analyzed their electrical response. These diffe approaches to heterostructure formation serve as crucial components of our investigation, allowing us to explore and evaluate the unique electronic properties arising from each design. This work demonstrates that the heterostructure possesses a better ON/OFF ratio of ∼5.78 × 105, essential in switching characteristics. Moreover, MoSe2provides a defect-free interface to PdSe2, resulting in a higher ON current of ∼10μA and mobility of ∼63.7 cm2V-1s-1, necessary for transistor applications. In addition, comprehending the process of charge transfer occurring at the interface between transition metal dichalcogenides is fundamental for advancing next-generation technologies. This work provides insights into the interface formed between the PdSe2and MoSe2that can be harnessed in transistor applications.

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties. Highly effective PDs can be obtained by making use of the exceptional properties of 2D materials, such as their high transparency, large charge carrier mobility, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is thoroughly discussed in this article, with special attention paid to the key characteristics that set them apart from PDs based on other integrated materials. This review examines how single TMDs, TMD-TMD heterostructures, TMD-graphene (Gr) hybrids, TMD-MXene composites, TMD-perovskite heterostructures, and TMD-quantum dot (QD) configurations show advanced photodetection. Additionally, a thorough analysis of the recent developments in 2D TMD-based PDs, highlighting their exceptional performance capabilities, including ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity, attained through cutting-edge methods is provided. The article conclusion highlights the potential for ground-breaking discoveries in this fast developing field of research by outlining the challenges faced in the field of PDs today and providing an outlook on the prospects of 2D TMD-based PDs in the future.

Local modulation of Au/MoS2 Schottky barriers using a top ZnO nanowire gate for high-performance photodetection

Schottky junctions are commonly used for fabricating heterojunction-based 2D transition metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection range, high sensitivity and fast response. However, these devices often suffer from reduced detectivity due to the high dark current, making it challenging to discover a simple and efficient universal way to improve the photoelectric performances. Here, we demonstrate a novel approach for integrating ZnO nanowire gates into a MoS2-Au Schottky junction to improve the photoelectric performances of photodetectors by locally controlling the Schottky barrier. This strategy remarkably reduces the dark current level of the device without affecting its photocurrent and the Schottky detectivity can be modified to a maximum detectivity of 1.4 × 1013 Jones with -20 V NG bias. This work provides potential possibilities for tuning the band structure of other materials and optimizing the performance of heterojunction photodetectors.

Graphene/Hexagonal Boron Nitride Heterostructures for O2 Activation and CO Oxidation: Metal-Free Catalysts by Design

Pristine graphene and h-BN monolayers are chemically inert to oxygen and thus exhibit very limited catalytic activity toward O2 activation. Herein, we show that graphene/h-BN heterostructures exhibit a surprising O2 activation capability. We theoretically designed ten graphene/h-BN heterostructures with three types of interfaces and investigated their catalytic activities toward O2 activation and CO-oxidation. In general, O2 can be molecularly chemisorbed and activated on electron-rich graphene/h-BN heterostructures. Electron-deficient graphene/h-BN heterostructures can lead to dissociative O2 adsorption with relatively low dissociation energy barriers (<0.4 eV). For CO-oxidation, the computed energy barrier can be as low as 0.67 eV. The high catalytic activities toward O2 stem from either electron-deficient heterostructures' accumulated electrons or electron richness and low work function for the electron-rich heterostructures. Although the catalytic activities of graphene/h-BN heterostructures depend strongly on the interface type, they are insensitive to the patterns of BN-substitutes, hence benefiting applicability of a wide range of heterostructures.

Ultrashort vertical-channel MoS2 transistor using a self-aligned contact

Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However, simultaneously scaling the channel length of these short-gate transistor is still challenging, and could be largely attributed to the processing difficulties to precisely align source-drain contact with gate electrode. Here, we report a self-alignment process for realizing ultra-scaled 2D transistors. By mechanically folding a graphene/BN/MoS2 heterostructure, source-drain metals could be precisely aligned around the folded edge, and the channel length is only dictated by heterostructure thickness. Together, we could realize sub-1 nm gate length and sub-50 nm channel length for vertical MoS2 transistor simultaneously. The self-aligned device exhibits on-off ratio over 105 and on-state current of 250 μA/μm at 4 V bias, which is over 40 times higher compared to control sample without self-alignment process.

Synthesis of N-Doped Graphene Photo-Catalyst for Photo-Assisted Charging of Li-Ion Oxygen Battery

In this work, nitrogen (N)-doped graphene film is synthesized, as a photo-catalyst, on one side of the copper foam by chemical vapor deposition and the copper foam is directly used as an electrode after porous Pd@rGO cathode loading to the other side of the foam for the photo-assisted charging of the Li-ion oxygen battery. The amount of urea (CO(NH2)2), which is used as N atom source, is optimized to get maximum photo-anodic currents from the n-type graphene films. The optical band gap and the valance band edge potential of the optimized N-doped graphene film are determined as 2.00 eV and 3.71 VLi+/Li, respectively. X-ray photoelectron spectra provided that the atomic percent of N atoms in the graphene film is 1.34% and the graphitic, pyrrolic and pyridinic N atom percentages are 54.01%, 42.20% and 3.79%, respectively. The photo-assisted charging tests indicated that the N-doped graphene film photo-catalyst reduced the charging potential significantly even at 1000 mA g-1 (0.1 mA cm-2) current density and improved the cyclic discharge-charge performance of the Li-ion oxygen battery considerably.

Spatiotemporal Observation of Quasi-Ballistic Transport of Electrons in Graphene

We report spatiotemporal observations of room-temperature quasi-ballistic electron transport in graphene, which is achieved by utilizing a four-layer van der Waals heterostructure to generate free charge carriers. The heterostructure is formed by sandwiching a MoS2 and MoSe2 heterobilayer between two graphene monolayers. Transient absorption measurements reveal that the electrons and holes separated by the type-II interface between MoS2 and MoSe2 can transfer to the two graphene layers, respectively. Transient absorption microscopy measurements, with high spatial and temporal resolution, reveal that while the holes in one graphene layer undergo a classical diffusion process with a large diffusion coefficient of 65 cm2 s-1 and a charge mobility of 5000 cm2 V-1 s-1, the electrons in the other graphene layer exhibit a quasi-ballistic transport feature, with a ballistic transport time of 20 ps and a speed of 22 km s-1, respectively. The different in-plane transport properties confirm that electrons and holes move independently of each other as charge carriers. The optical generation of ballistic charge carriers suggests potential applications for such van der Waals heterostructures as optoelectronic materials.

Nonadiabatic Dynamics Simulations for Photoinduced Processes in Molecules and Semiconductors: Methodologies and Applications

Nonadiabatic dynamics (NAMD) simulations have become powerful tools for elucidating complicated photoinduced processes in various systems from molecules to semiconductor materials. In this review, we present an overview of our recent research on photophysics of molecular systems and periodic semiconductor materials with the aid of ab initio NAMD simulation methods implemented in the generalized trajectory surface-hopping (GTSH) package. Both theoretical backgrounds and applications of the developed NAMD methods are presented in detail. For molecular systems, the linear-response time-dependent density functional theory (LR-TDDFT) method is primarily used to model electronic structures in NAMD simulations owing to its balanced efficiency and accuracy. Moreover, the efficient algorithms for calculating nonadiabatic coupling terms (NACTs) and spin-orbit couplings (SOCs) have been coded into the package to increase the simulation efficiency. In combination with various analysis techniques, we can explore the mechanistic details of the photoinduced dynamics of a range of molecular systems, including charge separation and energy transfer processes in organic donor-acceptor structures, ultrafast intersystem crossing (ISC) processes in transition metal complexes (TMCs), and exciton dynamics in molecular aggregates. For semiconductor materials, we developed the NAMD methods for simulating the photoinduced carrier dynamics within the framework of the Kohn-Sham density functional theory (KS-DFT), in which SOC effects are explicitly accounted for using the two-component, noncollinear DFT method. Using this method, we have investigated the photoinduced carrier dynamics at the interface of a variety of van der Waals (vdW) heterojunctions, such as two-dimensional transition metal dichalcogenides (TMDs), carbon nanotubes (CNTs), and perovskites-related systems. Recently, we extended the LR-TDDFT-based NAMD method for semiconductor materials, allowing us to study the excitonic effects in the photoinduced energy transfer process. These results demonstrate that the NAMD simulations are powerful tools for exploring the photodynamics of molecular systems and semiconductor materials. In future studies, the NAMD simulation methods can be employed to elucidate experimental phenomena and reveal microscopic details as well as rationally design novel photofunctional materials with desired properties.

The Role of Carbon in Metal-Organic Chemical Vapor Deposition-Grown MoS2 Films

Acquiring homogeneous and reproducible wafer-scale transition metal dichalcogenide (TMDC) films is crucial for modern electronics. Metal-organic chemical vapor deposition (MOCVD) offers a promising approach for scalable production and large-area integration. However, during MOCVD synthesis, extraneous carbon incorporation due to organosulfur precursor pyrolysis is a persistent concern, and the role of unintentional carbon incorporation remains elusive. Here, we report the large-scale synthesis of molybdenum disulfide (MoS2) thin films, accompanied by the formation of amorphous carbon layers. Using Raman, photoluminescence (PL) spectroscopy, and transmission electron microscopy (TEM), we confirm how polycrystalline MoS2 combines with extraneous amorphous carbon layers. Furthermore, by fabricating field-effect transistors (FETs) using the carbon-incorporated MoS2 films, we find that traditional n-type MoS2 can transform into p-type semiconductors owing to the incorporation of carbon, a rare occurrence among TMDC materials. This unexpected behavior expands our understanding of TMDC properties and opens up new avenues for exploring novel device applications.

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.

Electron Transport Properties of Graphene/WS2 Van Der Waals Heterojunctions

Van der Waals heterojunctions of two-dimensional atomic crystals are widely used to build functional devices due to their excellent optoelectronic properties, which are attracting more and more attention, and various methods have been developed to study their structure and properties. Here, density functional theory combined with the nonequilibrium Green's function technique has been used to calculate the transport properties of graphene/WS2 heterojunctions. It is observed that the formation of heterojunctions does not lead to the opening of the Dirac point of graphene. Instead, the respective band structures of both graphene and WS2 are preserved. Therefore, the heterojunction follows a unique Ohm's law at low bias voltages, despite the presence of a certain rotation angle between the two surfaces within the heterojunction. The transmission spectra, the density of states, and the transmission eigenstate are used to investigate the origin and mechanism of unique linear I-V characteristics. This study provides a theoretical framework for designing mixed-dimensional heterojunction nanoelectronic devices.

Single Atomic Defect Conductivity for Selective Dilute Impurity Imaging in 2D Semiconductors

Precisely controlled impurity doping is of fundamental significance in modern semiconductor technologies. Desired physical properties are often achieved at impurity concentrations well below parts per million level. For emergent two-dimensional semiconductors, development of reliable doping strategies is hindered by the inherent difficulty in identifying and quantifying impurities in such a dilute limit where the absolute number of atoms to be detected is insufficient for common analytical techniques. Here we report rapid high-contrast imaging of dilute single atomic impurities by using conductive atomic force microscopy. We show that the local conductivity is enhanced by more than 100-fold by a single impurity atom due to resonance-assisted tunneling. Unlike the closely related scanning tunneling microscopy, the local conductivity sensitively depends on the impurity energy level, allowing minority defects to be selectively imaged. We further demonstrate subsurface impurity detection with single monolayer depth resolution in multilayer materials.

Localised strain and doping of 2D materials

There is a growing interest in 2D materials-based devices as the replacement for established materials, such as silicon and metal oxides in microelectronics and sensing, respectively. However, the atomically thin nature of 2D materials makes them susceptible to slight variations caused by their immediate environment, inducing doping and strain, which can vary between, and even microscopically within, devices. One of the misapprehensions for using 2D materials is the consideration of unanimous intrinsic properties over different support surfaces. The interfacial interaction, intrinsic structural disorder and external strain modulate the properties of 2D materials and govern the device performance. The understanding, measurement and control of these factors are thus one of the significant challenges for the adoption of 2D materials in industrial electronics, sensing, and polymer composites. This topical review provides a comprehensive overview of the effect of strain-induced lattice deformation and its relationship with physical and electronic properties. Using the example of graphene and MoS₂ (as the prototypical 2D semiconductor), we rationalise the importance of scanning probe techniques and Raman spectroscopy to elucidate strain and doping in 2D materials. These effects can be directly and accurately characterised through Raman shifts in a non-destructive manner. A generalised model has been presented that deconvolutes the intertwined relationship between strain and doping in graphene and MoS₂ that could apply to other members of the 2D materials family. The emerging field of straintronics is presented, where the controlled application of strain over 2D materials induces tuneable physical and electronic properties. These perspectives highlight practical considerations for strain engineering and related microelectromechanical applications.

Heterostructure axial GaAsSb ensemble near-infrared p-i-n based axial configured nanowire photodetectors

In this work, we present a systematic design of growth experiments and subsequent characterization of self-catalyzed molecular beam epitaxially grown GaAsSb heterostructure axial p-i-n nanowires (NWs) on p-Si <111> for the ensemble photodetector (PD) application in the near-infrared region. Diverse growth methods have been explored to gain a better insight into mitigating several growth challenges by systematically studying their impact on the NW electrical and optical properties to realize a high-quality p-i-n heterostructure. The successful growth approaches are Te-dopant compensation to suppress the p-type nature of intrinsic GaAsSb segment, growth interruption for strain relaxation at the interface, decreased substrate temperature to enhance supersaturation and minimize the reservoir effect, higher bandgap compositions of the n-segment of the heterostructure relative to the intrinsic region for boosting the absorption, and the high-temperature ultra-high vacuumin situannealing to reduce the parasitic radial overgrowth. The efficacy of these methods is supported by enhanced photoluminescence (PL) emission, suppressed dark current in the heterostructure p-i-n NWs accompanied by increased rectification ratio, photosensitivity, and a reduced low-frequency noise level. The PD fabricated utilizing the optimized GaAsSb axial p-i-n NWs exhibited the longer wavelength cutoff at ∼1.1μm with a significantly higher responsivity of ∼120 A W^-1(@-3 V bias) and a detectivity of 1.1 × 10¹³Jones operating at room temperature. Frequency and the bias independent capacitance in the pico-Farad (pF) range and substantially lower noise level at the reverse biased condition, show the prospects of p-i-n GaAsSb NWs PD for high-speed optoelectronic applications.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

High Performance Graphene-C60 -Bismuth Telluride-C60 -Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses

Graphene is a promising candidate for the next-generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C60 /bismuth telluride/C60 /graphene vertical heterojunction phototransistor is proposed. The response spectral range covers 400-1800 nm; the responsivity peak is 106 A W-1 ; and the peak detection rate and peak response speed reach 1014 Jones and 250 µs, respectively. In addition, the regulation of positive and negative photocurrents at a gate voltage is characterized and the ionization process in impurities of the designed phototransistor at a low temperature is analyzed. Tunable bidirectional response provides a new degree of freedom for phototransistors' signal resolution. The analysis of the dynamic change process of impurity energy level is conducted to improve the device's performance. From the perspective of manufacturing process, the ultrathin phototransistor (20-30 nm) is compatible with functional metasurface to realize wavelength or polarization selection, making it possible to achieve large-scale production of integrated spectrometer or polarization imaging sensor by nanoimprinting process.

Nanocavity-Integrated van der Waals Heterobilayers for Nano-excitonic Transistor

Optical computing with optical transistors has emerged as a possible solution to the exponentially growing computational workloads, yet an on-chip nano-optical modulation remains a challenge due to the intrinsically noninteracting nature of photons in addition to the diffraction limit. Here, we present an all-optical approach toward nano-excitonic transistors using an atomically thin WSe₂/Mo_0.5W_0.5Se₂ heterobilayer inside a plasmonic tip-based nanocavity. Through optical wavefront shaping, we selectively modulate tip-enhanced photoluminescence (TEPL) responses of intra- and interlayer excitons in a ∼25 nm² area, demonstrating the enabling concept of an ultrathin 2-bit nano-excitonic transistor. We suggest a simple theoretical model describing the underlying adaptive TEPL modulation mechanism, which relies on the additional spatial degree of freedom provided by the presence of the plasmonic tip. Furthermore, we experimentally demonstrate a concept of a 2-trit nano-excitonic transistor, which can provide a technical basis for processing the massive amounts of data generated by emerging artificial intelligence technologies.

Tunable interlayer excitons and switchable interlayer trions via dynamic near-field cavity

Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., interplay of intra- and inter-layer excitons and conversion of excitons to trions, allow new opportunities for ultrathin hybrid photonic devices. However, with the associated large degree of spatial heterogeneity, understanding and controlling their complex competing interactions in TMD heterobilayers at the nanoscale remains a challenge. Here, we present an all-round dynamic control of interlayer-excitons and -trions in a WSe₂/Mo_0.5 W_0.5 Se₂ heterobilayer using multifunctional tip-enhanced photoluminescence (TEPL) spectroscopy with <20 nm spatial resolution. Specifically, we demonstrate the bandgap tunable interlayer excitons and the dynamic interconversion between interlayer-trions and -excitons, through the combinational tip-induced engineering of GPa-scale pressure and plasmonic hot electron injection, with simultaneous spectroscopic TEPL measurements. This unique nano-opto-electro-mechanical control approach provides new strategies for developing versatile nano-excitonic/trionic devices using TMD heterobilayers.

Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe2monolayers

Structural defects in transition metal dichalcogenide (TMDC) monolayers (ML) play a significant role in determining their (opto)electronic properties, triggering numerous efforts to control defect densities during material growth or by post-growth treatments. Various types of TMDC have been successfully deposited by MOCVD (metal-organic chemical vapor deposition), which is a wafer-scale deposition technique with excellent uniformity and controllability. However, so far there are no findings on the extent to which the incorporation of defects can be controlled by growth parameters during MOCVD processes of TMDC. In this work, we investigate the effect of growth temperature and precursor ratio during MOCVD of tungsten diselenide (WSe₂) on the growth of ML domains and their impact on the density of defects. The aim is to find parameter windows that enable the deposition of WSe₂ML with high crystal quality, i.e. a low density of defects. Our findings confirm that the growth temperature has a large influence on the crystal quality of TMDC, significantly stronger than found for the W to Se precursor ratio. Raising the growth temperatures in the range of 688 °C to 791 °C leads to an increase of the number of defects, dominating photoluminescence (PL) at low temperatures (5.6 K). In contrast, an increase of the molar precursor ratio (DiPSe/WCO) from 1000 up to 100 000 leads to less defect-related PL at low temperatures.

Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective

Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.

Hybrid Heterostructures to Generate Long-Lived and Mobile Photocarriers in Graphene

We report the generation of long-lived and highly mobile photocarriers in hybrid van der Waals heterostructures that are formed by monolayer graphene, few-layer transition metal dichalcogenides, and the organic semiconductor F₈ZnPc. Samples are fabricated by dry transfer of mechanically exfoliated MoS₂ or WS₂ few-layer flakes on a graphene film, followed by deposition of F₈ZnPc. Transient absorption microscopy measurements are performed to study the photocarrier dynamics. In heterostructures of F₈ZnPc/few-layer-MoS₂/graphene, electrons excited in F₈ZnPc can transfer to graphene and thus be separated from the holes that reside in F₈ZnPc. By increasing the thickness of MoS₂, these electrons acquire long recombination lifetimes of over 100 ps and a high mobility of 2800 cm² V^-1 s^-1. Graphene doping with mobile holes is also demonstrated with WS₂ as the middle layers. These artificial heterostructures can improve the performance of graphene-based optoelectronic devices.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Graphene barristors for de novo optoelectronics

Graphene-based vertical Schottky-barrier transistors (SBTs), renowned as graphene barristors, have emerged as a feasible candidate to fundamentally expand the horizon of conventional transistor technology. The remote tunability of graphene's electronic properties could endorse multi-stimuli responsive functionalities for a broad range of electronic and optoelectronic applications of transistors, with the capability of incorporating nanochannel architecture with dramatically reduced footprints from the vertical integrations. In this Feature Article, we provide a comprehensive overview of the progress made in the field of SBTs over the last 10 years, starting from the operating principles, materials evolution, and processing developments. Depending on the types of stimuli such as electrical, optical, and mechanical stresses, various fields of applications from conventional digital logic circuits to sensory technologies are highlighted. Finally, more advanced applications toward beyond-Moore electronics are discussed, featuring recent advancements in neuromorphic devices based on SBTs.

Coherent dynamics of multi-spin V B − center in hexagonal boron nitride

Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related phenomena of a negatively charged boron vacancy (V B − ) spin ensemble in hBN. We report on different dynamics of the V B − spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting multiple-frequency dynamical oscillation as beat in the Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of V B − and reveal that the nuclear spins can be driven via the strong electron nuclear coupling existing in V B − center, which can be modulated by the magnetic field and microwave field.