Self-polarized spin-nanolasers

Exceptionally High-glum Circularly Polarized Lasers Empowered by Strong 2D-Chiroptical Response in a Host-Guest Supramolecular Microcrystal

Circularly polarized (CP) lasers hold tremendous potential for advancing spin information communication and display technologies. Organic materials are emerging candidates for high-performance CP lasers because of their abundant chiral structures and excellent gain characteristics. However, their dissymmetry factor (glum) in CP emission is typically low due to the weak chiral light matter interactions. Here, we presented an effective approach to significantly amplifying glum by leveraging the intrinsic 2D-chiroptical response of an anisotropic organic supramolecular crystal. The organic complex microcrystal was designed to exhibit large 2D-chiroptical activities through strong coupling interactions between their remarkable linear birefringence (LB) and high degree of fluorescence linear polarization. Such 2D-chiroptical response can be further enhanced by the stimulated emission resulted from an increased degree of linear polarization, yielding a nearly pure CP laser with an exceptionally high glum of up to 1.78. Moreover, exploiting the extreme susceptibility of LB to temperature, we demonstrate a prototype of temperature-controlled chiroptical switches. These findings offer valuable insights for harnessing organic crystals to facilitate the development of high-performance CP lasers and other chiroptical devices.

Spin Light Emitting Diode Based on Exciton Fine Structure Tuning in Quantum Dots

We propose a concept of quantum dot based light emitting diode that produces circularly polarized light without magnetic contacts due to the hyperfine interaction at the crossing of the exciton levels in a weak magnetic field. The electroluminescence circular polarization degree can reach 100%. The concept is compatible with the micropillar cavities, which allows for the generation of single circularly polarized photons. Second order photon correlation function includes information about the nuclear spin dynamics in the quantum dot, and the nuclear spin state can be purified by the quantum measurement backaction.

Exciton Chirality Transfer Empowers Self-Triggered Spin-Polarized Amplified Spontaneous Emission from 1D-Anchoring-3D Perovskites

Spin-polarized lasers, arising from stimulated emission of imbalanced spin populations, play a vital role in spin-optoelectronics. It is usually tackled by external spin injection, inevitably suffering from additional losses across the barriers from injection sources to gain materials. Herein, spin-polarized coherent light emission is self-triggered from the 1D-anchoring-3D perovskites, where the imbalanced populations in achiral 3D perovskites are endowed with the spin selectivity of exciton chirality (EC) underpinned by chiral 1D perovskites. Efficient transfer of EC is enabled by rapid energy transfer, thereby creating an imbalance of the spin population of excited states. Stimulated emission of such populations brings self-triggered spin-polarized amplified spontaneous emission in the composite perovskites, yielding a higher degree of polarization (DOP) than that based on optical spin injection into bare achiral 3D perovskites. Chemical diversity of composite perovskites not only enables to adjust band gap for broadband output of spin-polarized light signals but also promises to manipulate radiative decay and spin relaxation toward remarkably increased DOP. These results highlight the importance of EC transfer mechanism for spin-polarized lasing and represent a crucial step toward the development of chiral-spintronics.

MgO Heterostructures: From Synthesis to Applications

The energy storage capacity of batteries and supercapacitors has seen rising demand and problems as large-scale energy storage systems and electric gadgets have become more widely adopted. With the development of nano-scale materials, the electrodes of these devices have changed dramatically. Heterostructure materials have gained increased interest as next-generation materials due to their unique interfaces, resilient structures and synergistic effects, providing the capacity to improve energy/power outputs and battery longevity. This review focuses on the role of MgO in heterostructured magnetic and energy storage devices and their applications and synthetic strategies. The role of metal oxides in manufacturing heterostructures has received much attention, especially MgO. Heterostructures have stronger interactions between tightly packed interfaces and perform better than single structures. Due to their typical physical and chemical properties, MgO heterostructures have made a breakthrough in energy storage. In perpendicularly magnetized heterostructures, the MgO's thickness significantly affects the magnetic properties, which is good news for the next generation of high-speed magnetic storage devices.

Evaluating Lead Halide Perovskite Nanocrystals as a Spin Laser Gain Medium

Spin-polarized charge endows conventional lasers with not only new functionalities but also reduced lasing thresholds thanks to the lifting of spin degeneracy. II-VI and III-V semiconductors have been extensively investigated as spin laser gain mediums; however, the degree of polarization is limited by the light hole and heavy hole degeneracy. Herein, we evaluate the potential of CsPbBr₃ nanocrystals─ones that are featured with low band-edge degeneracy and therefore a high degree of polarization as a result of inverted band structure and large spin-orbit coupling─as a gain medium for spin lasers. Our experiment and numerical modeling results reveal that, within the spin relaxation lifetime, the optical gain threshold can be depressed by polarizing the charge using circularly polarized photoexcitation. However, prolonging the spin relaxation lifetime is required to realize a spin laser.

III-Nitride Light-Emitting Devices

III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

Room-Temperature Magnetic Field Effect on Excitonic Photoluminescence in Perovskite Nanocrystals

Magnetic-field-enhanced spin-polarized electronic/optical properties in semiconductors are crucial for fabricating various spintronic devices. However, this spin polarization is governed by weak spin exchange interactions and easily randomized by thermal fluctuations; therefore, it is only produced at cryogenic temperatures, which severely limits the applications. Herein, a room-temperature intrinsic magnetic field effect (MFE) on excitonic photoluminescence is achieved in CsPbX₃ :Mn (X = Cl, Br) perovskite nanocrystals. Through moderate Mn doping, the MFE is enhanced by exciton-Mn interactions, and through partial Br substitution, the MFE is stabilized at room temperature by exciton orbital ordering. The orbital ordering significantly enhances the g-factor difference between electrons and holes, which is evidenced by a parallel orbit-orbit interaction among excitons generated by circular polarized laser excitation. This study provides a clear avenue for engineering spintronic materials based on orbital interactions in perovskites.

Investigation of plant leaf-derived graphene quantum dot clusters via magnetic force microscopy

Magnetic force microscopy (MFM) is utilized to characterize the magnetic moment in nanostructured plant leaf-derived graphene quantum dot clusters (GQDCs). The MFM signal reveals that the magnetic response of the GQDCs depends on the height and width of the GQDCs. However, individual GQDs, and smaller clusters with widths of less than 20 nm, have not shown any observable magnetic signal. Importantly, experimental analyses suggest that the magnetic signal of GQDCs distributed in a plane can be effectively detected at room temperature. These results could pave the way for future graphene-based magnetic storage media and spin manipulation quantum devices.

Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

A two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved over the entire confining potential. This results in the suppression of Rashba coupling even when the shape of the wedge is not symmetric. Here, for such a 2DEG channel, relaxation time for different spin projections is calculated as a function of donor concentration and gate bias. Our study reveals a strong dependence of the relaxation rate on the spin-orientation and density of carriers in the channel. Most interestingly, relaxation of spin oriented along the direction of confinement has been found to be completely switched off. Upon applying a suitable bias at the gate, the process can be switched on again. Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.

Photoluminescence and Boosting Electron-Phonon Coupling in CdS Nanowires with Variable Sn(IV) Dopant Concentration

High-quality Sn(IV)-doped CdS nanowires were synthesized by a thermal evaporation route. Both XRD and Raman scattering spectrum confirmed the doping effect. The room temperature photoluminescence (PL) demonstrated that both near bandgap emission and discrete trapped-state emission appeared simultaneously and significantly, which were attributed to the strong exciton trapping by impurities and electron-phonon coupling during the light transportation. The PL intensity ratio of near bandgap emission to trapped-state emission could be tune via doped Sn(IV) concentration in the CdS nanowires. It is interesting that the trapped-state emission shows well separated peaks with the assistance of 1LO, 2LO, 4LO phonons, demonstrating the boosting electron-phonon coupling in these doped CdS nanowires. The influence of Sn(IV) dopant is further revealed by PL lifetime decay profile. The optical micro-cavity also plays an important role on this emission process. Our results will be helpful to the understanding of doping modulated carrier interaction, trapping and recombination in one-dimensional (1D) nanostructures.

High Circular Polarized Nanolaser with Chiral Gammadion Metal Cavity

We demonstrate a circularly polarized laser with the metal-gallium-nitride gammadion nanocavities. The ultraviolet lasing signal was observed with the high circular dichroism at room temperature under pulsed optical pump conditions. Without external magnetism which breaks the time-reversal symmetry to favor optical transitions of a chosen handedness, the coherent outputs of these chiral nanolasers show a dissymmetry factor as high as 1.1. The small footprint of these lasers are advantageous for applications related to circularly polarized photons in future integrated systems, in contrast to the bulky setup of linearly-polarized lasers and quarter-wave plates.

Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures

We report a strong perpendicular magnetic anisotropy (PMA) in Au/Co/MgO/GaN heterostructures from both experiments and first-principles calculations. The Au/Co/MgO heterostructures have been grown by molecular beam epitaxy (MBE) on GaN/sapphire substrates. By carefully optimizing the growth conditions, we obtained a fully epitaxial structure with a crystalline orientation relationship Au(111)[1̄10]//Co(0001)[112̄0]//MgO(111)[101̄]//GaN(0002)[112̄0]. More interestingly, we demonstrate that a 4.6 nm thick Co film grown on MgO/GaN still exhibits a large perpendicular magnetic anisotropy. First-principles calculations performed on the Co (4ML)/MgO(111) structure showed that the MgO(111) surface can strongly enhance the magnetic anisotropy energy by 40% compared to a reference 4ML thick Co hcp film. Our layer-resolved and orbital-hybridization resolved anisotropy analyses helped to clarify that the origin of the PMA enhancement is due to the interfacial hybridization of O 2p and Co 3d orbitals at the Co/MgO interface. The perpendicularly magnetized Au/Co/MgO/GaN heterostructures are promising for efficient spin injection and detection in GaN based opto-electronics without any external magnetic field.

Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects

Owing to their superior optical properties, semiconductor nanopillars/nanowires in one-dimensional (1D) geometry are building blocks for nano-photonics. They also hold potential for efficient polarized spin-light conversion in future spin nano-photonics. Unfortunately, spin generation in 1D systems so far remains inefficient at room temperature. Here we propose an approach that can significantly enhance the radiative efficiency of the electrons with the desired spin while suppressing that with the unwanted spin, which simultaneously ensures strong spin and light polarization. We demonstrate high optical polarization of 20%, inferring high electron spin polarization up to 60% at room temperature in a 1D system based on a GaNAs nanodisk-in-GaAs nanopillar structure, facilitated by spin-dependent recombination via merely 2–3 defects in each nanodisk. Our approach points to a promising direction for realization of an interface for efficient spin-photon quantum information transfer at room temperature—a key element for future spin-photonic applications.

Room-temperature spin-generation in 1D systems like semiconductor nanopillars is typically inefficient. Here, the authors demonstrate an approach to achieve efficient spin polarization, even in the absence of a magnetic field, by selectively enhancing the radiative efficiency of one spin direction.

Giant Faraday Rotation in Metal-Fluoride Nanogranular Films

Magneto-optical Faraday effect is widely applied in optical devices and is indispensable for optical communications and advanced information technology. However, the bismuth garnet Bi-YIG is only the Faraday material since 1972. Here we introduce (Fe, FeCo)-(Al-,Y-fluoride) nanogranular films exhibiting giant Faraday effect, 40 times larger than Bi-YIG. These films have a nanocomposite structure, in which nanometer-sized Fe, FeCo ferromagnetic granules are dispersed in a Al,Y-fluoride matrix.

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlO _x spin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP when J > 100 A/cm² There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

Optimized Spiral Metal-Gallium-Nitride Nanowire Cavity for Ultra-High Circular Dichroism Ultraviolet Lasing at Room Temperature

Circularly polarized laser sources with small footprints and high efficiencies can possess advanced functionalities in optical communication and biophotonic integrated systems. However, the conventional lasers with additional circular-polarization converters are bulky and hardly compatible with nanophotonic circuits, and most active chiral plasmonic nanostructures nowadays exhibit broadband emission and low circular dichroism. In this work, with spirals of gallium nitride (GaN) nanowires (NWRs) covered by a metal layer, we demonstrated an ultrasmall semiconductor laser capable of emitting circularly-polarized photons. The left- and right-hand spiral metal nanowire cavities with varied periods were designed at ultraviolet wavelengths to achieve the high quality factor circular dichroism metastructures. The dissymmetry factors characterizing the degrees of circular polarizations of the left- and right-hand chiral lasers were 1.4 and −1.6 (±2 if perfectly circular polarized), respectively. The results show that the chiral cavities with only 5 spiral periods can achieve lasing signals with the high degrees of circular polarizations.