Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

Rational Design of Fluorinated 2D Polymer Film Based on Donor-Accepter Architecture toward Multilevel Memory Device for Neuromorphic Computing

Fluorine-containing 2D polymer (F-2DP) film is a desired system to regulate the charge transport in organic electronics but rather rarely reports due to the limited fluorine-containing building blocks and difficulties in synthesis. Herein, a novel polar molecule with antiparallel columnar stacking is synthesized and further embedded into an F-2DP system to control over the crystallinity of F-2DP film through self-complementary π-electronic forces. The donor-accepter-accepter'-donor' (D-A-A'-D') structure regulates the charge transportation efficiently, inducing multilevel memory behavior through stepwise charge capture and transfer processes. Thus, the device exhibits ternary memory behavior with low threshold voltage (Vth1 of 1.1 V, Vth2 of 2.0 V), clearly distinguishable resistance states (1:102:104) and ternary yield (83%). Furthermore, the stepwise formation of the charge complex endows the device with a wider range to regulate the conductive state, which allows its application in brain-inspired neuromorphic computing. Modified National Institute of Standards and Technology recognition can reach an accuracy of 86%, showing great potential in neuromorphic computing applications in the post-Moore era.

Optoelectronic Devices for In-Sensor Computing

The demand for accurate perception of the physical world leads to a dramatic increase in sensory nodes. However, the transmission of massive and unstructured sensory data from sensors to computing units poses great challenges in terms of power-efficiency, transmission bandwidth, data storage, time latency, and security. To efficiently process massive sensory data, it is crucial to achieve data compression and structuring at the sensory terminals. In-sensor computing integrates perception, memory, and processing functions within sensors, enabling sensory terminals to perform data compression and data structuring. Here, vision sensors are adopted as an example and discuss the functions of electronic, optical, and optoelectronic hardware for visual processing. Particularly, hardware implementations of optoelectronic devices for in-sensor visual processing that can compress and structure multidimensional vision information are examined. The underlying resistive switching mechanisms of volatile/nonvolatile optoelectronic devices and their processing operations are explored. Finally, a perspective on the future development of optoelectronic devices for in-sensor computing is provided.

Highly Efficient Back-End-of-Line Compatible Flexible Si-Based Optical Memristive Crossbar Array for Edge Neuromorphic Physiological Signal Processing and Bionic Machine Vision

The emergence of the Internet-of-Things is anticipated to create a vast market for what are known as smart edge devices, opening numerous opportunities across countless domains, including personalized healthcare and advanced robotics. Leveraging 3D integration, edge devices can achieve unprecedented miniaturization while simultaneously boosting processing power and minimizing energy consumption. Here, we demonstrate a back-end-of-line compatible optoelectronic synapse with a transfer learning method on health care applications, including electroencephalogram (EEG)-based seizure prediction, electromyography (EMG)-based gesture recognition, and electrocardiogram (ECG)-based arrhythmia detection. With experiments on three biomedical datasets, we observe the classification accuracy improvement for the pretrained model with 2.93% on EEG, 4.90% on ECG, and 7.92% on EMG, respectively. The optical programming property of the device enables an ultra-low power (2.8 × 10-13 J) fine-tuning process and offers solutions for patient-specific issues in edge computing scenarios. Moreover, the device exhibits impressive light-sensitive characteristics that enable a range of light-triggered synaptic functions, making it promising for neuromorphic vision application. To display the benefits of these intricate synaptic properties, a 5 × 5 optoelectronic synapse array is developed, effectively simulating human visual perception and memory functions. The proposed flexible optoelectronic synapse holds immense potential for advancing the fields of neuromorphic physiological signal processing and artificial visual systems in wearable applications.

Li Promoting Long Afterglow Organic Light-Emitting Transistor for Memory Optocoupler Module

The artificial brain is conceived as advanced intelligence technology, capable to emulate in-memory processes occurring in the human brain by integrating synaptic devices. Within this context, improving the functionality of synaptic transistors to increase information processing density in neuromorphic chips is a major challenge in this field. In this article, Li-ion migration promoting long afterglow organic light-emitting transistors, which display exceptional postsynaptic brightness of 7000 cd m-2 under low operational voltages of 10 V is presented. The postsynaptic current of 0.1 mA operating as a built-in threshold switch is implemented as a firing point in these devices. The setting-condition-triggered long afterglow is employed to drive the photoisomerization process of photochromic molecules that mimic neurotransmitter transfer in the human brain for realizing a key memory rule, that is, the transition from long-term memory to permanent memory. The combination of setting-condition-triggered long afterglow with photodiode amplifiers is also processed to emulate the human responding action after the setting-training process. Overall, the successful integration in neuromorphic computing comprising stimulus judgment, photon emission, transition, and encoding,  to emulate the complicated decision tree of the human brain is demonstrated.

Organic-inorganic hybrid piezotronic bipolar junction transistor for pressure sensing

With the rapid development of the Internet of Things (IoTs), wearable sensors are playing an increasingly important role in daily monitoring of personal health and wellness. The signal-to-noise-ratio has become the most critical performance factor to consider. To enhance it, on the one hand, good sensing materials/devices have been employed; on the other hand, signal amplification and noise reduction circuits have been used. However, most of these devices and circuits work in an active sampling mode, requiring frequent data acquisition and hence, entailing high-power consumption. In this scenario, a flexible and wearable event-triggered sensor with embedded signal amplification without an external power supply is of great interest. Here, we report a flexible two-terminal piezotronic n-p-n bipolar junction transistor (PBJT) that acts as an autonomous and highly sensitive, current- and/or voltage-mediated pressure sensor. The PBJT is formed by two back-to-back piezotronic diodes which are defined as emitter-base and collector-base diodes. Upon force exertion on the emitter side, as a result of the piezoelectric effect, the emitter-base diode is forward biased while the collector-base diode is reverse biased. Due to the inherent BJT amplification effect, the PBJT achieves record-high sensitivities of 139.7 kPa-1 (current-based) and 88.66 kPa-1 (voltage-based) in sensing mode. The PBJT also has a fast response time of <110 ms under exertion of dynamic stimuli ranging from a flying butterfly to a gentle finger touch. Therefore, the PBJT advances the state of the art not only in terms of sensitivity but also in regard to being self-driven and autonomous, making it promising for pressure sensing and other IoT applications.

Recent Development of Photochromic Polymer Systems: Mechanism, Materials, and Applications

Photochromic polymer is defined as a series of materials based on photochromic units in polymer chains, which produces reversible color changes under irradiation with a particular wavelength. Currently, as the research progresses, it shows increasing potential applications in various fields, such as anti-counterfeiting, information storage, super-resolution imaging, and logic gates. However, there is a paucity of published reviews on the topic of photochromic polymers. Herein, this review discusses and summarizes the research progress and prospects of such materials, mainly summarizing the basic mechanisms, classification, and applications of azobenzene, spiropyran, and diarylethene photochromic polymers. Moreover, 3-dimensional (3D) printable photochromic polymers are worthy to be summarized specifically because of its innovative approach for practical application; meanwhile, the developing 3D printing technology has shown increasing potential opportunities for better applications. Finally, the current challenges and future directions of photochromic polymer materials are summarized.

Arylazopyrazole-modulated stable dual-mode phototransistors

High-performance organic devices with dynamic and stable modulation are essential for building devices adaptable to the environment. However, the existing reported devices incorporating light-activated units exhibit either limited device stability or subpar optoelectronic properties. Here, we synthesize a new optically tunable polymer dielectric functionalized with photochromic arylazopyrazole units with a cis-isomer half-life of as long as 90 days. On this basis, stable dual-mode organic transistors that can be reversibly modulated are successfully fabricated. The trans-state devices exhibit high carrier mobility reaching 7.4 square centimeters per volt per second and excellent optical figures of merit, whereas the cis-state devices demonstrate stable but starkly different optoelectronic performance. Furthermore, optical image sensors are prepared with regulatable nonvolatile memories from 36 hours (cis state) to 108 hours (trans state). The achievement of dynamic light modulation shows remarkable prospects for the intelligent application of organic optoelectronic devices.

Photophore-Anchored Molecular Switch for High-Performance Nonvolatile Organic Memory Transistor

Over the past decade, molecular-switch-embedded memory devices, particularly field-effect transistors (FETs), have gained significant interest. Molecular switches are integrated to regulate the resistance or current levels in FETs. Despite substantial efforts, realizing large memory window with a long retention time, a critical factor in memory device functionality, remains a challenge. This is due to the inability of an isomeric state of a molecular switch to serve as a stable deep trap state within the semiconductor layer. Herein, the study addresses this limitation by introducing chemical bonding between molecular switch and conjugated polymeric semiconductor, facilitating closed isomer of diarylethene (DAE) to operate as a morphologically stable deep trap state. Azide- and diazirine-anchored DAEs are synthesized, which form chemical bonds to the polymer through photocrosslinking, thereby implementing permanent and controllable trapping states nearby conjugated backbone of polymer semiconductor. Consequently, when diazirine-anchored DAE is blended with F8T2 and subjected to photocrosslinking, the resulting organic FETs exhibit remarkable memory performance, including a memory window of 22 V with a retention time over 106 s, a high photoprogrammable on/off ratio over 103, and a high operational stability over 100 photocycles. Further, photophore-anchored DAEs can achieve precise patterning, which enables meticulous control over the semiconductor layer structure.

Resistive Memristors Using Robust Electropolymerized Porous Organic Polymer Films as Switchable Materials

Porous organic polymers (POPs) with inherent porosity, tunable pore environment, and semiconductive property are ideally suitable for application in various advanced semiconductor-related devices. However, owing to the lack of processability, POPs are usually prepared in powder forms, which limits their application in advanced devices. Herein, we demonstrate an example of information storage application of POPs with film form prepared by an electrochemical method. The growth process of the electropolymerized films in accordance with the Volmer-Weber model was proposed by observation of atomic force microscopy. Given the mechanism of the electron transfer system, we verified and mainly emphasized the importance of porosity and interfacial properties of porous polymer films for memristor. As expected, the as-fabricated memristors exhibit good performance on low turn-on voltage (0.65 ± 0.10 V), reliable data storage, and high on/off current ratio (104). This work offers inspiration for applying POPs in the form of electropolymerized films in various advanced semiconductor-related devices.

Technology and Integration Roadmap for Optoelectronic Memristor

Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.

Opto-Electrochemical Synaptic Memory in Supramolecularly Engineered Janus 2D MoS2

Artificial synapses combining multiple yet independent signal processing strategies in a single device are key enabler to achieve high-density of integration, energy efficiency, and fast data manipulation in brain-like computing. By taming functional complexity, the use of hybrids comprising multiple materials as active components in synaptic devices represents a powerful route to encode both short-term potentiation (STP) and long-term potentiation (LTP) in synaptic circuitries. To meet such a grand challenge, herein a novel Janus 2D material is developed by dressing asymmetrically the two surfaces of 2D molybdenum disulfide (MoS2 ) with an electrochemically-switchable ferrocene (Fc)/ ferrocenium (Fc+ ) redox couple and an optically-responsive photochromic azobenzene (Azo). Upon varying the magnitude of the electrochemical stimulus, it is possible to steer the transition between STP and LTP, thereby either triggering electrochemical doping of Fc/Fc+  pair on MoS2  or controlling an adsorption/desorption process of such redox species on MoS2 . In addition, a lower magnitude LTP is recorded by activating the photoisomerization of azobenzene chemisorbed molecules and therefore modulating the dipole-induced doping of the 2D semiconductor. Significantly, the interplay of electrochemical and optical stimuli makes it possible to construct artificial synapses where LTP can be boosted to 4-bit (16 memory states) while simultaneously functioning as STP.

Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials

Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal-oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements.

Phototunable and Photopatternable Polymer Semiconductors

ConspectusIn recent decades, there has been rapid development in the field of polymer semiconductors, particularly those based on conjugated donor-acceptor (D-A) polymers exhibiting high charge mobilities. Furthermore, the application of polymer semiconductors has been successfully extended to a wide range of functional devices, including sensors, photodetectors, radio frequency identification (RFID) tags, electronic paper, skin electronics, and artificial synapses. Over the past few years, there has been a growing focus on stimuli-responsive polymer semiconductors, which have the potential to impart additional functionalities to conventional field-effect transistors, garnering increased attention within the research community. In this context, phototunable polymer semiconductors have received significant attention due to their ability to utilize light as an external stimulus, enabling remote control of device performance with high spatiotemporal resolution. Meanwhile, integration of field-effect transistors with polymer semiconductors can enable the realization of complex functions. To achieve this, precise and controllable patterning of polymer semiconductors becomes essential. In this Account, we discuss our research findings in the context of phototunable and photopatternable polymer semiconductors. These developments encompass the following key aspects: (i) polymer semiconductors, such as poly(diketopyrrolopyrrole-quaterthiophene) (PDPP4T), exhibit phototunability when blended with the photochromic compound hexaarylbiimidazole (HABI). The photo/thermal-responsive field-effect transistors (FETs) can be fabricated using blending thin films. Remarkably, these photo/thermal-responsive transistors can function as photonically programmable and thermally erasable nonvolatile memory devices. (ii) By incorporating photoswitchable groups like azo and spiropyran into the side chains of conjugated D-A polymers, we can create phototunable polymer semiconductors. The reversible isomerization of azo and spiropyran groups significantly influences the charge transport properties of these polymer semiconductors. Consequently, the performance of the resulting FETs can be reversibly tuned through UV/visible or near-infrared light (NIR) irradiation. Notably, the incorporation of two distinct azo groups into the side chains leads to polymer semiconductors with tristable semiconducting states, offering the ability to logically control device performance using light irradiation at three different wavelengths. (iii) Photopatterning of p-type, n-type, and ambipolar semiconductors featuring alkyl side chains can be achieved using a diazirine-based, four-armed photo-cross-linker (4CNN) with a loading concentration of no more than 3% (w/w). Furthermore, the semiconducting performances of FETs with patterned thin films were found to be satisfactorily uniform. Importantly, the cross-linked thin films are robust and show good resistance to organic solvents, which is useful for fabricating all-solution processable multilayer electronic devices. (iv) The introduction of azide groups into the side chains of conjugated polymers results in a single-component semiconducting photoresist. The presence of azide groups renders the side chains with photo-cross-linking ability, enabling the successful formation of uniform patterns, even as small as 5 μm, under UV light irradiation. Benefiting from the single component feature, field-effect transistors with individual patterned thin films display satisfactorily uniform performances. Moreover, this semiconducting photoresist has proven effective for efficiently photopatterning other polymer semiconductors, demonstrating its versatility.

On-off conduction photoswitching in modelled spiropyran-based metal-organic frameworks

Materials with photoswitchable electronic properties and conductance values that can be reversibly changed over many orders of magnitude are highly desirable. Metal-organic framework (MOF) films functionalized with photoresponsive spiropyran molecules demonstrated the general possibility to switch the conduction by light with potentially large on-off-ratios. However, the fabrication of MOF materials in a trial-and-error approach is cumbersome and would benefit significantly from in silico molecular design. Based on the previous proof-of-principle investigation, here, we design photoswitchable MOFs which incorporate spiropyran photoswitches at controlled positions with defined intermolecular distances and orientations. Using multiscale modelling and automated workflow protocols, four MOF candidates are characterized and their potential for photoswitching the conductivity is explored. Using ab initio calculations of the electronic coupling between the molecules in the MOF, we show that lattice distances and vibrational flexibility tremendously modulate the possible conduction photoswitching between spiropyran- and merocyanine-based MOFs upon light absorption, resulting in average on-off ratios higher than 530 and 4200 for p- and n-conduction switching, respectively. Further functionalization of the photoswitches with electron-donating/-withdrawing groups is demonstrated to shift the energy levels of the frontier orbitals, permitting a guided design of new spiropyran-based photoswitches towards controlled modification between electron and hole conduction in a MOF.

Non-volatile optoelectronic memory based on a photosensitive dielectric

Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: large programming voltage (>20 V), high optical power density (>1 mW cm-2), and poor compatibility originating from the over-reliance on channel materials. Here, we firstly propose an optoelectronic memory based on a new photosensitive dielectric (PSD) architecture. Data writing and erasing are realized by using an optical pulse to switch on the PSD. The unique design enables the memory to work with a programming voltage and optical power density as low as 4 V and 160 µW cm-2, respectively. Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brand-new direction for non-volatile optoelectronic memories with low energy consumption.

Integration of image preprocessing and recognition functions in an optoelectronic coupling organic ferroelectric retinomorphic neuristor

The human visual system (HVS) has the advantages of a low power consumption and high efficiency because of the synchronous perception and early preprocessing of external image information in the retina, as well as parallel in-memory computing within the visual cortex. Realizing the biofunction simulation of the retina and visual cortex in a single device structure provides opportunities for performance improvements and machine vision system (MVS) integration. Here, we fabricate organic ferroelectric retinomorphic neuristors that integrate the retina-like preprocessing function and recognition of the visual cortex in a single device architecture. Benefiting from the electrical/optical coupling modulation of ferroelectric polarization, our devices show a bidirectional photoresponse that acts as the basis for mimicking retinal preconditioning and multi-level memory capabilities for recognition. The MVS based on the proposed retinomorphic neuristors achieves a high recognition accuracy of ∼90%, which is 20% higher than that of the incomplete system without the preprocessing function. In addition, we successfully demonstrate image encryption and optical programming logic gate functions. Our work suggests that the proposed retinomorphic neuristors offer great potential for MVS monolithic integration and functional expansion.

Organic multilevel (opto)electronic memories towards neuromorphic applications

In the past decades, neuromorphic computing has attracted the interest of the scientific community due to its potential to circumvent the von Neumann bottleneck. Organic materials, owing to their fine tunablility and their ability to be used in multilevel memories, represent a promising class of materials to fabricate neuromorphic devices with the key requirement of operation with synaptic weight. In this review, recent studies of organic multilevel memory are presented. The operating principles and the latest achievements obtained with devices exploiting the main approaches to reach multilevel operation are discussed, with emphasis on organic devices using floating gates, ferroelectric materials, polymer electrets and photochromic molecules. The latest results obtained using organic multilevel memories for neuromorphic circuits are explored and the major advantages and drawbacks of the use of organic materials for neuromorphic applications are discussed.

Recent progress in neuromorphic and memory devices based on graphdiyne

Graphdiyne (GDY) is an emerging two-dimensional carbon allotrope featuring a direct bandgap and fascinating physical and chemical properties, and it has demonstrated its promising potential in applications of catalysis, energy conversion and storage, electrical/optoelectronic devices, etc. In particular, the recent breakthrough in the synthesis of large-area, high-quality and ultrathin GDY films provides a feasible approach to developing high-performance electrical devices based on GDY. Recently, various GDY-based electrical and optoelectronic devices including multibit optoelectronic memories, ultrafast nonvolatile memories, artificial synapses and memristors have been proposed, in which GDY plays a crucial role. It is essential to summarize the recent breakthrough of GDY in device applications as a guidance, especially considering that the existing GDY-related reviews mainly focus on the applications in catalysis and energy-related fields. Herein, we review GDY-based novel memory and neuromorphic devices and their applications in neuromorphic computing and artificial visual systems. This review will provide an insight into the design and preparation of GDY-based devices and broaden the application fields of GDY.

Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.

Nonadiabatic Coupling in Trajectory Surface Hopping: How Approximations Impact Excited-State Reaction Dynamics

Photochemical reactions are widely modeled using the popular trajectory surface hopping (TSH) method, an affordable mixed quantum-classical approximation to the full quantum dynamics of the system. TSH is able to account for nonadiabatic effects using an ensemble of trajectories, which are propagated on a single potential energy surface at a time and which can hop from one electronic state to another. The occurrences and locations of these hops are typically determined using the nonadiabatic coupling between electronic states, which can be assessed in a number of ways. In this work, we benchmark the impact of some approximations to the coupling term on the TSH dynamics for several typical isomerization and ring-opening reactions. We have identified that two of the schemes tested, the popular local diabatization scheme and a scheme based on biorthonormal wave function overlap implemented in the OpenMOLCAS code as part of this work, reproduce at a much reduced cost the dynamics obtained using the explicitly calculated nonadiabatic coupling vectors. The other two schemes tested can give different results, and in some cases, even entirely incorrect dynamics. Of these two, the scheme based on configuration interaction vectors gives unpredictable failures, while the other scheme based on the Baeck-An approximation systematically overestimates hopping to the ground state as compared to the reference approaches.

Organic Phase-Change Memory Transistor Based on an Organic Semiconductor with Reversible Molecular Conformation Transition

Phase-change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase-changeable and high-mobility organic semiconductor (3,6-DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6-DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high-performance organic phase-change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications.

Molecular-Switch-Embedded Solution-Processed Semiconductors

Recent improvements in the performance of solution-processed semiconductor materials and optoelectronic devices have shifted research interest to the diversification/advancement of their functionality. Embedding a molecular switch capable of transition between two or more metastable isomers by light stimuli is one of the most straightforward and widely accepted methods to potentially realize the multifunctionality of optoelectronic devices. A molecular switch embedded in a semiconductor can effectively control various parameters such as trap-level, dielectric constant, electrical resistance, charge mobility, and charge polarity, which can be utilized in photoprogrammable devices including transistors, memory, and diodes. This review classifies the mechanism of each optoelectronic transition driven by molecular switches regardless of the type of semiconductor material or molecular switch or device. In addition, the basic characteristics of molecular switches and the persisting technical/scientific issues corresponding to each mechanism are discussed to help researchers. Finally, interesting yet infrequently reported applications of molecular switches and their mechanisms are also described.

Metal-Photoswitch Friendship: From Photochromic Complexes to Functional Materials

Cooperative metal-photoswitch interfaces comprise an application-driven field which is based on strategic coupling of metal cations and organic photochromic molecules to advance the behavior of both components, resulting in dynamic molecular and material properties controlled through external stimuli. In this Perspective, we highlight the ways in which metal-photoswitch interplay can be utilized as a tool to modulate a system's physicochemical properties and performance in a variety of structural motifs, including discrete molecular complexes or cages, as well as periodic structures such as metal-organic frameworks. This Perspective starts with photochromic molecular complexes as the smallest subunit in which metal-photoswitch interactions can occur, and progresses toward functional materials. In particular, we explore the role of the metal-photoswitch relationship for gaining fundamental knowledge of switchable electronic and magnetic properties, as well as in the design of stimuli-responsive sensors, optically gated memory devices, catalysts, and photodynamic therapeutic agents. The abundance of stimuli-responsive systems in the natural world only foreshadows the creative directions that will uncover the full potential of metal-photoswitch interactions in the coming years.

Unsymmetrical benzothiazole-based dithienylethene photoswitches

Herein, we investigate the structure-property relationships in a new series of benzothiazole based unsymmetrical hexafluorocyclopentene dithienylethenes (DTEs) and compare the results with the known facts for symmetric diarylethenes (DAEs). We reveal high photocyclization efficiency resulting from a significant shift of ground state equilibrium to the antiparallel conformation and a barrierless excited state pathway to conical intersection, which remains unperturbed even in polar solvents for most of the prepared DTEs. Furthermore, we uncover that the rate of back thermal cycloreversion correlates clearly more with the central C-C bond-length in the transition state than with the central C-C bond-length in the ground state of the cyclic form. Finally, our detailed vibrational spectral analysis of studied DTEs points out significant changes in Raman and infrared spectra during photoswitching cycles which pave the way for a non-destructive readout of stored information.

Bi2O2Se-based integrated multifunctional optoelectronics

The prominent light-matter interaction in 2D materials has become a pivotal research area that involves either an archetypal study of inherent mechanisms to explore such interactions or specific applications to assess the efficacy of such novel phenomena. With scientifically controlled light-matter interactions, various applications have been developed. Here, we report four diverse applications on a single structure utilizing the efficient photoresponse of Bi₂O₂Se with precisely tuned multiple optical wavelengths. First, the Bi₂O₂Se-based device performs the function of optoelectronic memory using UV (λ = 365 nm, 1.1 mW cm^-2) for the write-in process with SiO₂ as the charge trapping medium followed by a +1 V bias for read-out. Second, associative learning is mimicked with wavelengths of 525 nm and 635 nm. Third, using similar optical inputs, functions of logic gates "AND", "OR", "NAND", and "NOR" are realized with response current and resistance as outputs. Fourth is the demonstration of a 4 bit binary to the decimal converter using wavelengths of 740 nm (LSB), 595 nm, 490 nm, and 385 nm (MSB) as binary inputs and output response current regarded as equivalent decimal output. Our demonstration is a paradigm for Bi₂O₂Se-based devices to be an integral part of future advanced multifunctional electronic systems.

Robust Radical Cations of Hexabenzoperylene Exhibiting High Conductivity and Enabling an Organic Nonvolatile Optoelectronic Memory

Herein, we report robust π-conjugated radical cations resulting from the oxidation of hexabenzoperylene (HBP) derivatives, HBP-B and HBP-H, which have butyl and hexyl groups, respectively, attached to the same twisted double helicene π-backbone. The radical cation of HBP-B was successfully crystallized in the form of hexafluorophosphate, which exhibited conductivity as high as 1.32 ± 0.04 S cm^-1. Photochemical oxidation of HBP-H by molecular oxygen led to the formation of its radical cation in the solid state, as found with different techniques. This allowed the organic field effect transistor of HBP-H to function as a nonvolatile optoelectronic memory, with the memory switching contrast above 10³ and long-term stability without using a floating gate, an electret layer, or photochromic molecules.

Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it still suffers a high operation voltage (tens of volts) due to the Fowler-Nordheim tunnelling mechanism. It is still a great challenge to realize ultrafast nonvolatile storage with low operation voltage. Here we propose a floating-gate memory with a structure of MoS₂/hBN/MoS₂/graphdiyne oxide/WSe₂, in which a threshold switching layer, graphdiyne oxide, instead of a dielectric blocking layer in conventional floating-gate memories, is used to connect the floating gate and control gate. The volatile threshold switching characteristic of graphdiyne oxide allows the direct charge injection from control gate to floating gate by applying a nanosecond voltage pulse (20 ns) with low magnitude (2 V), and restricts the injected charges in floating gate for a long-term retention (10 years) after the pulse. The high operation speed and low voltage endow the device with an ultralow energy consumption of 10 fJ. These results demonstrate a new strategy to develop next-generation high-speed low-energy nonvolatile memory.

Stepping Out of the Blue: From Visible to Near-IR Triggered Photoswitches

Light offers unique opportunities for controlling the activity of materials and biosystems with high spatiotemporal resolution. Molecular photoswitches are chromophores that undergo reversible isomerization between different states upon irradiation with light, allowing a convenient means to control their influence over the system of interest. However, a significant limitation of classical photoswitches is the requirement to initiate the switching in one or both directions using deleterious UV light with poor tissue penetration. Red-shifted photoswitches are hence in high demand and have attracted keen recent research interest. In this Review, we highlight recent progress towards the development of visible- and NIR-activated photoswitches characterized by distinct photochromic reaction mechanisms. We hope to inspire further endeavors in this field, allowing the full potential of these tools in biotechnology and materials chemistry applications to be realized.

New tricks and emerging applications from contemporary azobenzene research

Azobenzenes have many faces. They are well-known as dyes, but most of all, azobenzenes are versatile photoswitchable molecules with powerful photochemical properties. Azobenzene photochemistry has been extensively studied for decades, but only relatively recently research has taken a steer towards applications, ranging from photonics and robotics to photobiology. In this perspective, after an overview of the recent trends in the molecular design of azobenzenes, we highlight three research areas where the azobenzene photoswitches may bring about promising technological innovations: chemical sensing, organic transistors, and cell signaling. Ingenious molecular designs have enabled versatile control of azobenzene photochemical properties, which has in turn facilitated the development of chemical sensors and photoswitchable organic transistors. Finally, the power of azobenzenes in biology is exemplified by vision restoration and photactivation of neural signaling. Although the selected examples reveal only some of the faces of azobenzenes, we expect the fields presented to develop rapidly in the near future, and that azobenzenes will play a central role in this development.

Photo-thermo-induced room-temperature phosphorescence through solid-state molecular motion

The development of smart-responsive materials, in particular those with non-invasive, rapid responsive phosphorescence, is highly desirable but has rarely been described. Herein, we designed and prepared a series of molecular rotors containing a triazine core and three bromobiphenyl units: o-Br-TRZ, m-Br-TRZ, and p-Br-TRZ. The bromine and triazine moieties serve as room temperature phosphorescence-active units, and the bromobiphenyl units serve as rotors to drive intramolecular rotation. When irradiated with strong ultraviolet photoirradiation, intramolecular rotations of o-Br-TRZ, m-Br-TRZ, and p-Br-TRZ increase, successively resulting in a photothermal effect via molecular motions. Impressively, the photothermal temperature attained by p-Br-TRZ is as high as 102 °C, and synchronously triggers its phosphorescence due to the ordered molecular arrangement after molecular motion. The thermal effect is expected to be important for triggering efficient phosphorescence, and the photon input for providing a precise and non-invasive stimulus. Such sequential photo-thermo-phosphorescence conversion is anticipated to unlock a new stimulus-responsive phosphorescence material without chemicals invasion.

The development of non-invasive, rapid responsive phosphorescence is highly desirable but has rarely been described. Herein, the authors designed and prepare a series of molecular rotors containing a room temperature phosphorescence active triazine core and three bromobiphenyl units acting as rotors and demonstrate light stimulus triggered phosphorescence.

Integrating Unexpected High Charge-Carrier Mobility and Low-Threshold Lasing Action in an Organic Semiconductor

Integrating high charge-carrier mobility and low-threshold lasing action in an organic semiconductor is crucial for the realization of an electrically pumped laser, but remains a great challenge. Herein, we present an organic semiconductor, named as 2,7-di(2-naphthyl)-9H-fluorene (LD-2), which shows an unexpected high charge-carrier mobility of 2.7 cm²  V^-1  s^-1 and low-threshold lasing characteristic of 9.43 μJ cm^-2 and 9.93 μJ cm^-2 and high-quality factor (Q) of 2131 and 1684 at emission peaks of 420 and 443 nm, respectively. Detailed theoretical calculations and photophysical data analysis demonstrate that a large intermolecular transfer integral of 10.36-45.16 meV together with a fast radiative transition rate of 8.0×10⁸  s^-1 are responsible for the achievement of the superior integrated optoelectronic properties in the LD-2 crystal. These optoelectronic performances of LD-2 are among the highest reported low-threshold lasing organic semiconductors with efficient charge transport, suggesting its promise for research of electrically pumped organic lasers (EPOLs).

Optically Encodable and Erasable Multilevel Nonvolatile Flexible Memory Device Based on Metal-Organic Frameworks

Multilevel and flexible nonvolatile memory (NVM) is a promising candidate for data storage in next-generation devices but its high bias and low mobility of conducting channels are often its drawbacks. In this study, we demonstrate a low bias of smaller than 0.1 V and a high-mobility graphene layer as a conducting channel for flexible optoelectronic NVM based on a composite thin film of indium-based MOF-derived InCl₃ and 4,4-oxydiphthalic anhydride (odpta), Na[In₃(odpt)₂(OH)₂(H₂O)₂](H₂O)₄, and reduced graphene oxide (rGO). The optoelectronic NVM device can be encoded and erased optically by ultraviolet (UV) light and visible light, respectively. Our device also achieves memory states over 192 (6-bit storage) distinct levels, which can emerge as mass data storage. It also shows an excellent endurance of write-erase cycles under irradiation with a laser of varying wavelengths, the mechanical stability of more than 1000 bending cycles, and stable retention for longer than 10 000 s. These results open an alternative route for developing low bias and innovative optoelectronic technologies.

Visualization and Comprehension of Electronic and Topographic Contrasts on Cooperatively Switched Diarylethene-Bridged Ditopic Ligand

Diarylethene is a prototypical molecular switch that can be reversibly photoisomerized between its open and closed forms. Ligands bpy-DAE-bpy, consisting of a phenyl-diarylethene-phenyl (DAE) central core and bipyridine (bpy) terminal substituents, are able to self-organize. They are investigated by scanning tunneling microscopy at the solid–liquid interface. Upon light irradiation, cooperative photochromic switching of the ligands is recognized down to the submolecular level. The closed isomers show different electron density of states (DOS) contrasts, attributed to the HOMO or LUMO molecular orbitals observed. More importantly, the LUMO images show remarkable differences between the open and closed isomers, attributed to combined topographic and electronic contrasts mainly on the DAE moieties. The electronic contrasts from multiple HOMO or LUMO distributions, combined with topographic distortion of the open or closed DAE, are interpreted by density functional theory (DFT) calculations.

Solid-Ionic Memory in a van der Waals Heterostructure

Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS₂/BiFeO₃/SrTiO₃ van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 10⁶ (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 10⁴ A/W) and photodetectivity (2.12 × 10¹³ Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.

Planar Graphene-Based Microsupercapacitors

With the development of wearable, portable, and implantable electronic devices, flexible and on-chip microsupercapacitors (MSCs) are urgently needed for miniaturized energy storage. Planar MSCs have high power density, fast charge/discharge rate, and long operating lifetime, and can adapt to future flexible, integrated, and miniaturized electronic systems for wide application foreground. Due to the high specific surface area, outstanding electrical conductivity, and excellent electron mobility, graphene shows promising advantages in planar MSCs devices, thus stimulates wide-ranging research in the last few years. Herein, the recent progress of planar graphene-based MSCs, including the intrinsic structure regulation of graphene-based electrode materials, the specific fabrication techniques, the multifunctional integration, and various applications of MSCs as flexible and on-chip energy storage is systematically summarized. The key challenges and prospects of future planar graphene-based MSCs are also discussed targeting to realize their practical applications.

Directional, Low-Energy Driven Thermal Actuating Bilayer Enabled by Coordinated Submolecular Switching

The authors reveal a thermal actuating bilayer that undergoes reversible deformation in response to low-energy thermal stimuli, for example, a few degrees of temperature increase. It is made of an aligned carbon nanotube (CNT) sheet covalently connected to a polymer layer in which dibenzocycloocta-1,5-diene (DBCOD) actuating units are oriented parallel to CNTs. Upon exposure to low-energy thermal stimulation, coordinated submolecular-level conformational changes of DBCODs result in macroscopic thermal contraction. This unique thermal contraction offers distinct advantages. It's inherently fast, repeatable, low-energy driven, and medium independent. The covalent interface and reversible nature of the conformational change bestow this bilayer with excellent repeatability, up to at least 70 000 cycles. Unlike conventional CNT bilayer systems, this system can achieve high precision actuation readily and can be scaled down to nanoscale. A new platform made of poly(vinylidene fluoride) (PVDF) in tandem with the bilayer can harvest low-grade thermal energy and convert it into electricity. The platform produces 86 times greater energy than PVDF alone upon exposure to 6 °C thermal fluctuations above room temperature. This platform provides a pathway to low-grade thermal energy harvesting. It also enables low-energy driven thermal artificial robotics, ultrasensitive thermal sensors, and remote controlled near infrared (NIR) driven actuators.

Ga2O3 based multilevel solar-blind photomemory array with logic, arithmetic, and image storage functions

Photomemories offer great opportunities for multifunctional integration of optical sensing, data storage, and processing into one single device. However, little attention has been paid to photomemories working in the solar-blind region so far, which may have unique advantages of insusceptibility to ambient light and higher capacity. Herein, we propose and demonstrate a Ga₂O₃ based solar-blind photomemory array with logic, arithmetic, and optoelectronic memory functions. The device shows n-type field effect-transistor performance with an on/off ratio as high as 10⁶, a responsivity of 8 × 10³ A W^-1, and a detectivity of 1.42 × 10¹⁴ Jones, all of which are amongst the best values ever reported for Ga₂O₃ based photodetectors. Based on the trapping and de-trapping process of holes in Ga₂O₃, multilevel data storage can be realized from the device. Simultaneously, the optical and electrical mixed basic logic of reconfigurable "AND" and "OR" operations have been realized in a single cell through the co-regulation of solar-blind light and the grid voltage. In addition, the photomemory can perform counting and addition operations, and the photomemory array can be utilized to realize solar-blind image storage. The results suggest that Ga₂O₃ may have potential applications in high-performance information storage, computing, and communications.

Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications

Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.

Contribution of Polymers to Electronic Memory Devices and Applications

Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.

Photoswitchable Composite Polymer Electrolytes Using Spiropyran-Immobilized Nanoporous Templates

Composite polymer electrolytes (CPEs) with smart, stimuli-responsive characteristics have gained considerable attention owing to their noninvasive manipulation and applications in future technologies. To address this potential, in this work, we demonstrate photoresponsive composite polymer electrolytes, consisting of gel polymer electrolyte (GPE) and spiropyran-immobilized nanoporous anodic aluminum oxide (SP-AAO) templates. Under UV irradiation, the close SP form isomerizes to the open merocyanine (MC) form, creating extremely polarized AAO surfaces; whereas, under visible light irradiation, the MC form reverts to the SP form, creating neutral surface conditions. The electrostatic interactions between ions and AAO surfaces are investigated by attenuated total reflection Fourier-transform infrared (ATR-FTIR) spectroscopy. Moreover, the behavior of ionic conductivity of the GPE@SP-AAO is found to be consistent with the kinetics of isomerization tracked by UV-Vis spectroscopy. This work provides a promising platform for developing next-generation photoelectronic smart devices.

Light-Programmable Logic-in-Memory in 2D Semiconductors Enabled by Supramolecular Functionalization: Photoresponsive Collective Effect of Aligned Molecular Dipoles

Nowadays, the unrelenting growth of the digital universe calls for radically novel strategies for data processing and storage. An extremely promising and powerful approach relies on the development of logic-in-memory (LiM) devices through the use of floating gate and ferroelectric technologies to write and erase data in a memory operating as a logic gate driven by electrical bias. In this work, we report an alternative approach to realize the logic-in-memory based on two-dimensional (2D) transition metal dichalcogenides (TMDs) where multiple memorized logic output states have been established via the interface with responsive molecular dipoles arranged in supramolecular arrays. The collective dynamic molecular dipole changes of the axial ligand coordinated onto self-assembled metal phthalocyanine nanostructures on the surface of 2D TMD enables large reversible modulation of the Fermi level of both n-type molybdenum disulfide (MoS₂) and p-type tungsten diselenide (WSe₂) field-effect transistors (FETs), to achieve multiple memory states by programming and erasing with ultraviolet (UV) and with visible light, respectively. As a result, logic-in-memory devices were built up with our supramolecular layer/2D TMD architecture where the output logic is encoded by the motion of the molecular dipoles. Our strategy relying on the dynamic control of the 2D electronics by harnessing the functions of molecular-dipole-induced memory in a supramolecular hybrid layer represents a versatile way to integrate the functional programmability of molecular science into the next generation nanoelectronics.

Ambipolar Charge Storage in Type-I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor-Based Memories

Efficient charge storage media play a pivotal role in transistor-based memories and thus are under intense research. In this work, the charge storage ability of type-I InP/ZnS core/shell quantum dots is well revealed through studying a pentacene-based organic transistor with the quantum dots (QDs) integrated. The quantum well-like energy band structure enables the QDs to directly confine either holes or electrons in the core, signifying a dielectric layer-free nonvolatile memory. Especially, the QDs in this device can be charged by electrons using light illumination as the exclusive method. The electron charging process is ascribed to the photoexcitation process in the InP-core and the hot holes induced. The QDs layer demonstrates an electron storage density of ≈5.0 × 1011  cm-2 and a hole storage density of ≈6.4 × 1011  cm-2 . Resultingly, the output device shows a fast response speed to gate voltage (10 µs), large memory window (42 V), good retention (>4.0 × 104 s), and reliable endurance. This work suggests that the core/shell quantum dot as a kind of charge storage medium is of great promise for optoelectronic memories.

High-Density Reconfigurable Synaptic Transistors Targeting a Minimalist Neural Network

Enormous synaptic devices are required to build a parallel, precise, and efficient neural computing system. To further improve the energy efficiency of neuromorphic computing, a single high-density synaptic (HDS) device with multiple nonvolatile synaptic states is suggested to reduce the number of synaptic devices in the neural network, although such a powerful synaptic device is rarely demonstrated. Here, a photoisomerism material, namely, diarylethene, whose energy level varies with the wavelength of illumination is first introduced to construct a powerful HDS device. The multiple synaptic states of the HDS device are intrinsically converted under UV-vis regulation and remain nonvolatile after the removal of illumination. More importantly, the conversion is reconfigurable and reversible under different light conditions, and the synaptic characteristics are comprehensively mimicked in each state. Finally, compared with a two-layer multilayer perceptron (MLP) architecture based on static synaptic devices, the HDS device-based architecture reduces the device number by 16 times to achieve a minimalist neural computing structure. The invention of the HDS device opens up a revolutionary paradigm for the establishment of a brain-like network.

Asymmetric Dressing of WSe2 with (Macro)molecular Switches: Fabrication of Quaternary-Responsive Transistors

The forthcoming saturation of Moore's law has led to a strong demand for integrating analogue functionalities within semiconductor-based devices. As a step toward this goal, we fabricate quaternary-responsive WSe₂-based field-effect transistors (FETs) whose output current can be remotely and reversibly controlled by light, heat, and electric field. A photochromic silane-terminated spiropyran (SP) is chemisorbed on SiO₂ forming a self-assembled monolayer (SAM) that can switch from the SP to the merocyanine (MC) form in response to UV illumination and switch back by either heat or visible illumination. Such a SAM is incorporated at the dielectric-semiconductor interface in WSe₂-based FETs. Upon UV irradiation, a drastic decrease in the output current of 82% is observed and ascribed to the zwitterionic MC isomer acting as charge scattering site. To provide an additional functionality, the WSe₂ top surface is coated with a ferroelectric co-polymer layer based on poly(vinylidene fluoride-co-trifluoroethylene). Because of its switchable inherent electrical polarization, it can promote either the accumulation or depletion of charge carriers in the WSe₂ channel, thereby inducing a current modulation with 99% efficiency. Thanks to the efficient tuning induced by the two components and their synergistic effects, the device polarity could be modulated from n-type to p-type. Such a control over the carrier concentration and device polarity is key to develop 2D advanced electronics. Moreover, the integration strategy of multiple stimuli-responsive elements into a single FET allows us to greatly enrich its functionality, thereby promoting the development for More-than-Moore technology.