Optical frequency synthesizer with an integrated erbium tunable laser

Actively tunable laser action in GeSn nanomechanical oscillators

Mechanical forces induced by high-speed oscillations provide an elegant way to dynamically alter the fundamental properties of materials such as refractive index, absorption coefficient and gain dynamics. Although the precise control of mechanical oscillation has been well developed in the past decades, the notion of dynamic mechanical forces has not been harnessed for developing tunable lasers. Here we demonstrate actively tunable mid-infrared laser action in group-IV nanomechanical oscillators with a compact form factor. A suspended GeSn cantilever nanobeam on a Si substrate is resonantly driven by radio-frequency waves. Electrically controlled mechanical oscillation induces elastic strain that periodically varies with time in the GeSn nanobeam, enabling actively tunable lasing emission at >2 μm wavelengths. By utilizing mechanical resonances in the radio frequency as a driving mechanism, this work presents wide-range mid-infrared tunable lasers with ultralow tuning power consumption.

Nanocavity-Mediated Purcell Enhancement of Er in TiO2 Thin Films Grown via Atomic Layer Deposition

The use of trivalent erbium (Er3+), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunication devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO2) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping controls over the Er concentration. Even though the as-grown films are amorphous after oxygen annealing, they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO2. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (≈300) of their optical lifetime. Our findings demonstrate a low-temperature, nondestructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.

Attosecond-precision balanced timing detector with a single photodiode

We experimentally demonstrate a novel and practical timing detector based on a double-pass acousto-optic frequency shifter. With time and frequency multiplexing, for the first time to our knowledge, a balanced detection is realized using only a single photodiode, which greatly decreases the excess electronic noise during photodetection. With a total input optical power of 1.4 mW (0.35 mW per pulse train), an almost shot-noise-limited detection floor of 28.3 zs/√Hz is achieved, and the timing jitter integrated from 1 kHz to 1 MHz is reduced from 99.0 as (without eliminating the photodetector electronic noise) to only 30.4 as. Even with an input power of 50 µW per pulse train, 221.4 zs/√Hz detection floor and 268.0 as integrated timing jitter at [1 kHz and 1 MHz] are still maintained. This timing detector provides a powerful tool for high-precision metrology, ultra-long-distance ranging, and large-scale timing synchronization.

Development of a 2 μm Solid-State Laser for Lidar in the Past Decade

The 2 μm wavelength belongs to the eye-safe band and has a wide range of applications in the fields of lidar, biomedicine, and materials processing. With the rapid development of military, wind power, sensing, and other industries, new requirements for 2 μm solid-state laser light sources have emerged, especially in the field of lidar. This paper focuses on the research progress of 2 μm solid-state lasers for lidar over the past decade. The technology and performance of 2 μm pulsed single longitudinal mode solid-state lasers, 2 μm seed solid-state lasers, and 2 μm high power solid-state lasers are, respectively, summarized and analyzed. This paper also introduces the properties of gain media commonly used in the 2 μm band, the construction method of new bonded crystals, and the fabrication method of saturable absorbers. Finally, the future prospects of 2 μm solid-state lasers for lidar are presented.

Attosecond-precision balanced linear-optics timing detector

A new timing detection method based on acousto-optic modulation is demonstrated. The timing detector is immune to dispersion effects and the environmental and laser amplitude noise can be well suppressed by a balanced configuration. With 1 mW power per pulse train, the measured timing noise floor is about 1×10^-10 fs²/Hz, which is close to the shot noise limit. The integrated timing jitter is 26 as at [1 Hz, 1 MHz]. With 170 fs pulse width and typical detector parameters, the calculated detector's timing noise floor is more than 5 and 12 orders of magnitude lower than that of a BOC, at 1 mW and 1 µW input power, respectively. This timing detector has a variety of potential applications in ultra-long fiber link stabilization, quantum metrology, weak signal timing control, etc.

Towards integrated photonic interposers for processing octave-spanning microresonator frequency combs

Microcombs-optical frequency combs generated in microresonators-have advanced tremendously in the past decade, and are advantageous for applications in frequency metrology, navigation, spectroscopy, telecommunications, and microwave photonics. Crucially, microcombs promise fully integrated miniaturized optical systems with unprecedented reductions in cost, size, weight, and power. However, the use of bulk free-space and fiber-optic components to process microcombs has restricted form factors to the table-top. Taking microcomb-based optical frequency synthesis around 1550 nm as our target application, here, we address this challenge by proposing an integrated photonics interposer architecture to replace discrete components by collecting, routing, and interfacing octave-wide microcomb-based optical signals between photonic chiplets and heterogeneously integrated devices. Experimentally, we confirm the requisite performance of the individual passive elements of the proposed interposer-octave-wide dichroics, multimode interferometers, and tunable ring filters, and implement the octave-spanning spectral filtering of a microcomb, central to the interposer, using silicon nitride photonics. Moreover, we show that the thick silicon nitride needed for bright dissipative Kerr soliton generation can be integrated with the comparatively thin silicon nitride interposer layer through octave-bandwidth adiabatic evanescent coupling, indicating a path towards future system-level consolidation. Finally, we numerically confirm the feasibility of operating the proposed interposer synthesizer as a fully assembled system. Our interposer architecture addresses the immediate need for on-chip microcomb processing to successfully miniaturize microcomb systems and can be readily adapted to other metrology-grade applications based on optical atomic clocks and high-precision navigation and spectroscopy.

High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators with quality factors Q > 10 × 106 can be attained at die-level throughput. Yet, current fabrication techniques do not have sufficiently high yield and performance for existing and emerging applications, such as integrated travelling-wave parametric amplifiers that require meter-long photonic circuits. Here we demonstrate a fabrication technology that meets all requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 × 106, corresponding to 1.0 dB m-1 optical loss, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances, and confirmed via cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB m-1 loss in dies of only 5 × 5 mm2 size. Using a response measurement self-calibrated via the Kerr nonlinearity, we reveal that the intrinsic absorption-limited Q factor of our Si3N4 microresonators can exceed 2 × 108. This absorption loss is sufficiently low such that the Kerr nonlinearity dominates the microresonator's response even in the audio frequency band. Transferring this Si3N4 technology to commercial foundries can significantly improve the performance and capabilities of integrated photonics.

Smart lasers tame complex spatiotemporal cavity dynamics

By associating multimode fibers, optical wavefront manipulation, and a feedback loop controlled by a genetic algorithm, researchers have demonstrated that nonlinear spatiotemporal dynamics can be flexed within the laser cavity to achieve a user-specified objective, such as the lasing wavelength, output power, beam profile or pulsed operation.