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Joo HJ, Liu J, Chen M, Burt D, Chomet B, Kim Y, Shi X, Lu K, Zhang L, Ikonic Z, Sohn YI, Tan CS, Gacemi D, Vasanelli A, Sirtori C, Todorov Y, Nam D. Actively tunable laser action in GeSn nanomechanical oscillators. NATURE NANOTECHNOLOGY 2024; 19:1116-1121. [PMID: 38684806 DOI: 10.1038/s41565-024-01662-w] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2023] [Accepted: 03/26/2024] [Indexed: 05/02/2024]
Abstract
Mechanical forces induced by high-speed oscillations provide an elegant way to dynamically alter the fundamental properties of materials such as refractive index, absorption coefficient and gain dynamics. Although the precise control of mechanical oscillation has been well developed in the past decades, the notion of dynamic mechanical forces has not been harnessed for developing tunable lasers. Here we demonstrate actively tunable mid-infrared laser action in group-IV nanomechanical oscillators with a compact form factor. A suspended GeSn cantilever nanobeam on a Si substrate is resonantly driven by radio-frequency waves. Electrically controlled mechanical oscillation induces elastic strain that periodically varies with time in the GeSn nanobeam, enabling actively tunable lasing emission at >2 μm wavelengths. By utilizing mechanical resonances in the radio frequency as a driving mechanism, this work presents wide-range mid-infrared tunable lasers with ultralow tuning power consumption.
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Affiliation(s)
- Hyo-Jun Joo
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Jiawen Liu
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, Paris, France
- Laboratory of Hybrid Photonics, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Melvina Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Daniel Burt
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Baptiste Chomet
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, Paris, France
| | - Youngmin Kim
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Xuncheng Shi
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Kunze Lu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Lin Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Zoran Ikonic
- School of Electronic and Electrical Engineering, University of Leeds, Leeds, UK
| | - Young-Ik Sohn
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Chuan Seng Tan
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Djamal Gacemi
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, Paris, France
| | - Angela Vasanelli
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, Paris, France
| | - Carlo Sirtori
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, Paris, France.
| | - Yanko Todorov
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, Paris, France.
| | - Donguk Nam
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
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2
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Ji C, Solomon MT, Grant GD, Tanaka K, Hua M, Wen J, Seth SK, Horn CP, Masiulionis I, Singh MK, Sullivan SE, Heremans FJ, Awschalom DD, Guha S, Dibos AM. Nanocavity-Mediated Purcell Enhancement of Er in TiO 2 Thin Films Grown via Atomic Layer Deposition. ACS NANO 2024; 18:9929-9941. [PMID: 38533847 PMCID: PMC11008365 DOI: 10.1021/acsnano.3c09878] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Revised: 02/20/2024] [Accepted: 02/28/2024] [Indexed: 03/28/2024]
Abstract
The use of trivalent erbium (Er3+), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunication devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO2) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping controls over the Er concentration. Even though the as-grown films are amorphous after oxygen annealing, they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO2. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (≈300) of their optical lifetime. Our findings demonstrate a low-temperature, nondestructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
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Affiliation(s)
- Cheng Ji
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Michael T. Solomon
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Center
for Molecular Engineering, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
| | - Gregory D. Grant
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Koichi Tanaka
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
| | - Muchuan Hua
- Center
for Nanoscale Materials, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
| | - Jianguo Wen
- Center
for Nanoscale Materials, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
| | - Sagar Kumar Seth
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Connor P. Horn
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Ignas Masiulionis
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Manish Kumar Singh
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
| | - Sean E. Sullivan
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Center
for Molecular Engineering, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
| | - F. Joseph Heremans
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Center
for Molecular Engineering, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
| | - David D. Awschalom
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Center
for Molecular Engineering, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
- Department
of Physics, University of Chicago, Chicago, Illinois 60637, United States
| | - Supratik Guha
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United States
- Materials
Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Center
for Molecular Engineering, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
| | - Alan M. Dibos
- Center
for Molecular Engineering, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
- Center
for Nanoscale Materials, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
- Nanoscience
and Technology Division, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
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3
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Wang T, Li M, Zhang Y, Xin M. Attosecond-precision balanced timing detector with a single photodiode. OPTICS LETTERS 2023; 48:5201-5204. [PMID: 37831827 DOI: 10.1364/ol.505656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Accepted: 09/12/2023] [Indexed: 10/15/2023]
Abstract
We experimentally demonstrate a novel and practical timing detector based on a double-pass acousto-optic frequency shifter. With time and frequency multiplexing, for the first time to our knowledge, a balanced detection is realized using only a single photodiode, which greatly decreases the excess electronic noise during photodetection. With a total input optical power of 1.4 mW (0.35 mW per pulse train), an almost shot-noise-limited detection floor of 28.3 zs/√Hz is achieved, and the timing jitter integrated from 1 kHz to 1 MHz is reduced from 99.0 as (without eliminating the photodetector electronic noise) to only 30.4 as. Even with an input power of 50 µW per pulse train, 221.4 zs/√Hz detection floor and 268.0 as integrated timing jitter at [1 kHz and 1 MHz] are still maintained. This timing detector provides a powerful tool for high-precision metrology, ultra-long-distance ranging, and large-scale timing synchronization.
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Li K, Niu C, Wu C, Yu Y, Ma Y. Development of a 2 μm Solid-State Laser for Lidar in the Past Decade. SENSORS (BASEL, SWITZERLAND) 2023; 23:7024. [PMID: 37631561 PMCID: PMC10458207 DOI: 10.3390/s23167024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Revised: 06/19/2023] [Accepted: 08/04/2023] [Indexed: 08/27/2023]
Abstract
The 2 μm wavelength belongs to the eye-safe band and has a wide range of applications in the fields of lidar, biomedicine, and materials processing. With the rapid development of military, wind power, sensing, and other industries, new requirements for 2 μm solid-state laser light sources have emerged, especially in the field of lidar. This paper focuses on the research progress of 2 μm solid-state lasers for lidar over the past decade. The technology and performance of 2 μm pulsed single longitudinal mode solid-state lasers, 2 μm seed solid-state lasers, and 2 μm high power solid-state lasers are, respectively, summarized and analyzed. This paper also introduces the properties of gain media commonly used in the 2 μm band, the construction method of new bonded crystals, and the fabrication method of saturable absorbers. Finally, the future prospects of 2 μm solid-state lasers for lidar are presented.
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Affiliation(s)
| | | | - Chunting Wu
- Jilin Key Laboratory of Solid-State Laser Technology and Application, Changchun University of Science and Technology, Changchun 130022, China; (K.L.); (C.N.); (Y.Y.); (Y.M.)
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5
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Wang T, Ren Q, Şafak K, Kärtner FX, Xin M. Attosecond-precision balanced linear-optics timing detector. OPTICS EXPRESS 2021; 29:38140-38149. [PMID: 34808873 DOI: 10.1364/oe.442459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Accepted: 10/20/2021] [Indexed: 06/13/2023]
Abstract
A new timing detection method based on acousto-optic modulation is demonstrated. The timing detector is immune to dispersion effects and the environmental and laser amplitude noise can be well suppressed by a balanced configuration. With 1 mW power per pulse train, the measured timing noise floor is about 1×10-10 fs2/Hz, which is close to the shot noise limit. The integrated timing jitter is 26 as at [1 Hz, 1 MHz]. With 170 fs pulse width and typical detector parameters, the calculated detector's timing noise floor is more than 5 and 12 orders of magnitude lower than that of a BOC, at 1 mW and 1 µW input power, respectively. This timing detector has a variety of potential applications in ultra-long fiber link stabilization, quantum metrology, weak signal timing control, etc.
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6
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Rao A, Moille G, Lu X, Westly DA, Sacchetto D, Geiselmann M, Zervas M, Papp SB, Bowers J, Srinivasan K. Towards integrated photonic interposers for processing octave-spanning microresonator frequency combs. LIGHT, SCIENCE & APPLICATIONS 2021; 10:109. [PMID: 34039954 PMCID: PMC8155053 DOI: 10.1038/s41377-021-00549-y] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/23/2020] [Revised: 04/21/2021] [Accepted: 05/03/2021] [Indexed: 06/12/2023]
Abstract
Microcombs-optical frequency combs generated in microresonators-have advanced tremendously in the past decade, and are advantageous for applications in frequency metrology, navigation, spectroscopy, telecommunications, and microwave photonics. Crucially, microcombs promise fully integrated miniaturized optical systems with unprecedented reductions in cost, size, weight, and power. However, the use of bulk free-space and fiber-optic components to process microcombs has restricted form factors to the table-top. Taking microcomb-based optical frequency synthesis around 1550 nm as our target application, here, we address this challenge by proposing an integrated photonics interposer architecture to replace discrete components by collecting, routing, and interfacing octave-wide microcomb-based optical signals between photonic chiplets and heterogeneously integrated devices. Experimentally, we confirm the requisite performance of the individual passive elements of the proposed interposer-octave-wide dichroics, multimode interferometers, and tunable ring filters, and implement the octave-spanning spectral filtering of a microcomb, central to the interposer, using silicon nitride photonics. Moreover, we show that the thick silicon nitride needed for bright dissipative Kerr soliton generation can be integrated with the comparatively thin silicon nitride interposer layer through octave-bandwidth adiabatic evanescent coupling, indicating a path towards future system-level consolidation. Finally, we numerically confirm the feasibility of operating the proposed interposer synthesizer as a fully assembled system. Our interposer architecture addresses the immediate need for on-chip microcomb processing to successfully miniaturize microcomb systems and can be readily adapted to other metrology-grade applications based on optical atomic clocks and high-precision navigation and spectroscopy.
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Affiliation(s)
- Ashutosh Rao
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
- Maryland NanoCenter, University of Maryland, College Park, 20742, MD, USA.
| | - Gregory Moille
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
- Joint Quantum Institute, NIST/University of Maryland, College Park, MD, 20742, USA
| | - Xiyuan Lu
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
- Maryland NanoCenter, University of Maryland, College Park, 20742, MD, USA
| | - Daron A Westly
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - Davide Sacchetto
- Ligentec, EPFL Innovation Park, Batiment C, Lausanne, Switzerland
| | | | - Michael Zervas
- Ligentec, EPFL Innovation Park, Batiment C, Lausanne, Switzerland
| | - Scott B Papp
- Physical Measurement Laboratory, Time and Frequency Division, National Institute of Standards and Technology, Boulder, CO, 80305, USA
- Department of Physics, University of Colorado, Boulder, CO, 80309, USA
| | - John Bowers
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Kartik Srinivasan
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
- Joint Quantum Institute, NIST/University of Maryland, College Park, MD, 20742, USA.
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7
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Liu J, Huang G, Wang RN, He J, Raja AS, Liu T, Engelsen NJ, Kippenberg TJ. High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits. Nat Commun 2021; 12:2236. [PMID: 33863901 PMCID: PMC8052462 DOI: 10.1038/s41467-021-21973-z] [Citation(s) in RCA: 56] [Impact Index Per Article: 18.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2020] [Accepted: 02/17/2021] [Indexed: 01/19/2023] Open
Abstract
Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators with quality factors Q > 10 × 106 can be attained at die-level throughput. Yet, current fabrication techniques do not have sufficiently high yield and performance for existing and emerging applications, such as integrated travelling-wave parametric amplifiers that require meter-long photonic circuits. Here we demonstrate a fabrication technology that meets all requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 × 106, corresponding to 1.0 dB m-1 optical loss, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances, and confirmed via cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB m-1 loss in dies of only 5 × 5 mm2 size. Using a response measurement self-calibrated via the Kerr nonlinearity, we reveal that the intrinsic absorption-limited Q factor of our Si3N4 microresonators can exceed 2 × 108. This absorption loss is sufficiently low such that the Kerr nonlinearity dominates the microresonator's response even in the audio frequency band. Transferring this Si3N4 technology to commercial foundries can significantly improve the performance and capabilities of integrated photonics.
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Affiliation(s)
- Junqiu Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Guanhao Huang
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Rui Ning Wang
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Jijun He
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Arslan S Raja
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Tianyi Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Nils J Engelsen
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Tobias J Kippenberg
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.
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8
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Grelu P. Smart lasers tame complex spatiotemporal cavity dynamics. LIGHT, SCIENCE & APPLICATIONS 2020; 9:188. [PMID: 33298852 PMCID: PMC7678861 DOI: 10.1038/s41377-020-00426-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
By associating multimode fibers, optical wavefront manipulation, and a feedback loop controlled by a genetic algorithm, researchers have demonstrated that nonlinear spatiotemporal dynamics can be flexed within the laser cavity to achieve a user-specified objective, such as the lasing wavelength, output power, beam profile or pulsed operation.
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Affiliation(s)
- Philippe Grelu
- Laboratoire ICB UMR 6303 CNRS, Université Bourgogne - Franche-Comté, 21000, Dijon, France.
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9
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Wang Y, Chen L, Yan Y, Chen J, Dai J, Dai X. Separation of adjacent heavy rare earth Lutetium (III) and Ytterbium (III) by task-specific ionic liquid Cyphos IL 104 embedded polymer inclusion membrane. J Memb Sci 2020. [DOI: 10.1016/j.memsci.2020.118263] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
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