High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

Integrated photon pairs source in silicon carbide based on micro-ring resonators for quantum storage at telecom wavelengths

We present the design of an on-chip integrated photon pair source based on Spontaneous Four Wave Mixing (SFWM), implemented on a ring resonator in the 4H Silicon Carbide On Insulator (4H-SiCOI) platform, compatible with a solid state quantum memory in the telecommunications band. Through careful engineering of the waveguide dispersion and micro-ring resonator dimensions, we found solutions where the signal photons are emitted at 1536.48 nm with a bandwidth of ∼ 150 MHz, enabling the interaction with the hyperfine structure of Er3 + ions. Simultaneously, the idler photons are generated at 1563.86 nm, matching the central wavelength of a specific channel in a commercial dense wavelength division multiplexing system. The proposed device fulfill all the spectral requirements in a simple ring-bus coupled waveguide configuration with design parameters within the range of reported values for similar resonators, making feasible its manufacturing with current fabrication capabilities.

Fluorescence Enhancement of Single V2 Centers in a 4H-SiC Cavity Antenna

Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based optical antenna. The structure consists of a silver-coated, 135 nm-thin 4H-SiC membrane functioning as a planar cavity with a broadband resonance yielding a theoretical photon collection enhancement factor of ∼34. The planar geometry allows us to identify over 20 single V2 centers at room temperature with a mean (maximum) count rate enhancement factor of 9 (15). Moreover, we observe 10 V2 centers with a mean absorption line width below 80 MHz at cryogenic temperatures. These results demonstrate a photon collection enhancement that is robust to the lateral emitter position.

Ultrasound sensing with optical microcavities

Ultrasound sensors play an important role in biomedical imaging, industrial nondestructive inspection, etc. Traditional ultrasound sensors that use piezoelectric transducers face limitations in sensitivity and spatial resolution when miniaturized, with typical sizes at the millimeter to centimeter scale. To overcome these challenges, optical ultrasound sensors have emerged as a promising alternative, offering both high sensitivity and spatial resolution. In particular, ultrasound sensors utilizing high-quality factor (Q) optical microcavities have achieved unprecedented performance in terms of sensitivity and bandwidth, while also enabling mass production on silicon chips. In this review, we focus on recent advances in ultrasound sensing applications using three types of optical microcavities: Fabry-Perot cavities, π-phase-shifted Bragg gratings, and whispering gallery mode microcavities. We provide an overview of the ultrasound sensing mechanisms employed by these microcavities and discuss the key parameters for optimizing ultrasound sensors. Furthermore, we survey recent advances in ultrasound sensing using these microcavity-based approaches, highlighting their applications in diverse detection scenarios, such as photoacoustic imaging, ranging, and particle detection. The goal of this review is to provide a comprehensive understanding of the latest advances in ultrasound sensing with optical microcavities and their potential for future development in high-performance ultrasound imaging and sensing technologies.

Demonstration of 4H-silicon carbide on an aluminum nitride integrated photonic platform

The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide (SiC) to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with 1-µm-thick aluminum nitride and demonstrate a 4H-silicon-carbide-on-aluminum-nitride integrated photonic platform for the first time to our knowledge. Efficient grating couplers, low-loss waveguides, and compact microring resonators with intrinsic quality factors up to 210,000 are fabricated. In addition, by undercutting the aluminum nitride layer, the intrinsic quality factor of the silicon carbide microring is improved by nearly one order of magnitude (1.8 million). Finally, an optical pump-probe method is developed to measure the thermal conductivity of the aluminum nitride layer, which is estimated to be over 30 times of that of silicon dioxide.

Entangled photon pair generation in an integrated SiC platform

Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, has remained elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of (9 ± 1) × 103 pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g(2)(0) on the order of 10-3, demonstrating the SiC platform as a prospective fully integrated, complementary metal-oxide-semiconductor compatible single-photon source for quantum applications.

Helium Ion-Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High-Quality Nanofabrication

Silicon carbide (SiC) is a promising material for a wide range of applications, including mechanical nano-resonators, quantum photonics, and non-linear photonics. However, its chemical inertness poses challenges for etching in terms of resolution and smoothness. Herein, a novel approach known as helium ion-bombardment-enhanced etching (HIBEE) is presented to achieve high-quality SiC etching. The HIBEE technique utilizes a focused helium ion beam with a typical ion energy of 30 keV to disrupt the crystal lattices of SiC, thus enabling wet etching using hydrofluoric acids and hydrogen peroxide. The etching mechanism is verified via simulations and characterization. The use of a sub-nanometer beam spot of focused helium ions ensures fabrication resolution, and the resulting etched surface exhibits an extremely low roughness of ≈0.9 nm. One of the advantages of the HIBEE technique is that it does not require resist spin-coating and development processes, thus enabling the production of nanostructures on irregular SiC surfaces, such as suspended structures and sidewalls. Additionally, the unique interaction volume of helium ions with substrates enables the one-step fabrication of suspended nanobeam structures directly from bulk substrates. The HIBEE technique is expected to facilitate and accelerate the prototyping of high-quality SiC devices.

Highly Responsive Switchable Broadband DUV-NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III-V Nanowire on Silicon Substrate for Integrated Photonics

Low-dimensional semiconductor nanostructures, particularly in the form of nanowire configurations with large surface-to-volume-ratio, offer intriguing optoelectronic properties for the advancement of integrated photonic technologies. Here, a bias-controlled, superior dual-functional broadband light detecting/emitting diode enabled by constructing the aluminum-gallium-nitride-based nanowire on the silicon-platform is reported. Strikingly, the diode exhibits a stable and high responsivity (R) of over 200 mAW-1 covering an extremely wide operation band under reverse bias conditions, ranging from deep ultraviolet (DUV: 254 nm) to near-infrared (NIR: 1000 nm) spectrum region. While at zero bias, it still possesses superior DUV light selectivity with a high off-rejection ratio of 106. When it comes to the operation of the light-emitting mode under forward bias, it can achieve large spectral changes from UV to red simply by coating colloid quantum dots on the nanowires. Based on the multifunctional features of the diodes, this study further employs them in various optoelectronic systems, demonstrating outstanding applications in multicolor imaging, filterless color discrimination, and DUV/NIR visualization. Such highly responsive broadband photodetector with a tunable emitter enabled by III-V nanowire on silicon provides a new avenue toward the realization of integrated photonics and holds great promise for future applications in communication, sensing, imaging, and visualization.

Biomass-derived lightweight SiC aerogels for superior thermal insulation

Silicon carbide (SiC) aerogels, which possess unique porous structure and high ablation resistance, show great potential as thermal insulation materials, but their wide application is limited by expensive and cumbersome synthetic procedures. Therefore, it is pivotal to develop a facile, versatile, and cost-effective method for producing SiC aerogels. Herein, we have successfully prepared ultra-light SiC nanowire aerogels (SNWAs) boasting remarkably low thermal conductivity, using biomass-derived carbon templates (BCTs) through a direct carbothermal reduction method. The BCTs obtained by simply carbonizing freeze-dried eggplants can serve not only as the carbon sources but also as the templates for the in situ growth of SiC nanowires. The resultant three-dimensional (3D) SNWAs possess various porous structures, incorporating the original micro-sized pores inherited from the eggplant and nano-sized pores constructed from interconnected SiC nanowires. These multi-scale pore structures bestow SNWAs with lower gas-phase heat conduction characteristics. Besides, the numerous stacking faults and heterojunctions present in the SiC nanowires play a key role in obstructing the solid-phase heat transfer and reinforcing the SiC skeleton. As a result, the SNWAs show an exceptionally low thermal conductivity, measuring 0.0149 W m-1 K-1 at room temperature, and maintain this low value (0.0256 W m-1 K-1) even at 500 °C. Remarkably, even after being exposed to air at 1200 °C for 2 h, the SNWAs maintain a low thermal conductivity of 0.0226 W m-1 K-1. Such low-cost and effective preparation of biomass-derived SiC aerogels is anticipated to pave a new avenue for the development of advanced thermal insulators.

Efficient Raman Lasing and Raman-Kerr Interaction in an Integrated Silicon Carbide Platform

Implementing stimulated Raman scattering in a low-loss microresonator could lead to Raman lasing. Here, we report the demonstration of an efficient Raman laser with >50% power efficiency in an integrated silicon carbide platform for the first time. By fine-tuning the free spectral range (FSR) of 43 μm-radius silicon carbide microresonators, the Stokes resonance corresponding to the dominant Raman shift of 777 cm-1 (23.3 THz) is aligned to the center of the Raman gain spectrum, resulting in a low power threshold of 2.5 mW. The peak Raman gain coefficient is estimated to be (0.75 ± 0.15) cm/GW in the 1550 nm band, with an approximate full width at half-maximum of (120 ± 30) GHz. In addition, the microresonator is designed to exhibit normal dispersion at the pump wavelength near 1550 nm while possessing anomalous dispersion at the first Stokes near 1760 nm. At high enough input powers, a Kerr microcomb is generated by the Stokes signal acting as the secondary pump, which then mixes with the pump laser through four-wave mixing to attain a wider spectral coverage. Furthermore, cascaded Raman lasing and the occurrence of multiple Raman shifts, including 204 cm-1 (6.1 THz) and 266 cm-1 (8.0 THz) transitions, are also observed. Finally, we show that the Stokes Raman could also help broaden the spectrum in a Kerr microcomb which has anomalous dispersion at the pump wavelength. Our example of a 100 GHz-FSR microcomb has a wavelength span from 1200 to 1900 nm with 300 mW on-chip power.

High-Q adiabatic micro-resonators on a wafer-scale ion-sliced 4H-silicon carbide-on-insulator platform

A 4H-silicon carbide-on-insulator (4H-SiCOI) has emerged as a prominent material contender for integrated photonics owing to its outstanding material properties such as CMOS compatibility, high refractive index, and high second- and third-order nonlinearities. Although various micro-resonators have been realized on the 4H-SiCOI platform, enabling numerous applications including frequency conversion and electro-optical modulators, they may suffer from a challenge associated with spatial mode interactions, primarily due to the widespread use of multimode waveguides. We study the suppression of spatial mode interaction with Euler bends, and demonstrate micro-resonators with improved Q values above 1 × 105 on ion-sliced 4H-SiCOI platform with a SiC thickness nonuniformity less than 1%. The spatial-mode-interaction-free micro-resonators reported on the CMOS-compatible wafer-scale 4H-SiCOI platform would constitute an important ingredient for the envisaged large-scale integrated nonlinear photonic circuits.

High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature

Integrated photonic platforms have proliferated in recent years, each demonstrating its unique strengths and shortcomings. Given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strengths of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second- and third-order nonlinearities, and broad transparency window in the visible and near-infrared range. However, integrating silicon carbide (SiC) has been difficult, and current approaches rely on transfer bonding techniques that are time-consuming, expensive, and lacking precision in layer thickness. Here, we demonstrate high-index amorphous silicon carbide (a-SiC) films deposited at 150 °C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of Qint = (4.7-5.7) × 105 corresponding to optical losses between 0.78 and 1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow-loss thin SiN and LiNbO3 platforms.

Broadband optical nonlinearity and all-optical switching features in low-defect GaN

GaN is a one of promising materials for nonlinear optical applications. In this work, the broadband nonlinear optical response and potential applications for all-optical switching (AOS) are evaluated in low-defect GaN. In the pump-probe experiments, the ultrafast optical switching times are consistent with pulse widths accompanied with relative weak free-carrier absorption response, and the modulation contrast can reach ∼60% by varying the polarization orientations between the pump and probe lights. In the visible region, the broadband two-photon absorption effect exhibits excellent values for the imaginary part of figure of merit (FOM), providing the possibility of AOS based on nonlinear absorption (magnitude). While in the near-infrared region and under the presence of three-photon absorption, not only the real part of FOM based on Kerr effect is evaluated, but also the maximum light intensity for the usage of AOS based on nonlinear refraction (phase) is determined. The broadband nonlinear optical and AOS features in low-defect GaN will be highly favorable for the applications in the field of integrated nonlinear photonics and photonic circuits.

Inverse-designed silicon carbide quantum and nonlinear photonics

Inverse design has revolutionized the field of photonics, enabling automated development of complex structures and geometries with unique functionalities unmatched by classical design. However, the use of inverse design in nonlinear photonics has been limited. In this work, we demonstrate quantum and classical nonlinear light generation in silicon carbide nanophotonic inverse-designed Fabry-Pérot cavities. We achieve ultra-low reflector losses while targeting a pre-specified anomalous dispersion to reach optical parametric oscillation. By controlling dispersion through inverse design, we target a second-order phase-matching condition to realize second- and third-order nonlinear light generation in our devices, thereby extending stimulated parametric processes into the visible spectrum. This first realization of computational optimization for nonlinear light generation highlights the power of inverse design for nonlinear optics, in particular when combined with highly nonlinear materials such as silicon carbide.

χ(2) nonlinear photonics in integrated microresonators

Second-order (χ⁽²⁾) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ⁽²⁾ response due to their centrosymmetric structures. A variety of novel material platforms possessing χ⁽²⁾ nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ⁽²⁾ nonlinear effects are introduced. Afterward, we highlight the commonly used χ⁽²⁾ nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ⁽²⁾ nonlinearity in the field of integrated microcavity photonics.

Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nm

The design of semiconductor-based photonic devices requires precise knowledge of the refractive index of the optical materials, a not constant parameter over the operating temperature range. However, the variation of the refractive index with the temperature, the thermo-optic coefficient, is itself temperature-dependent. A precise characterization of the thermo-optic coefficient in a wide temperature range is therefore essential for the design of nonlinear optical devices, active and passive integrated photonic devices and, more in general, for the semiconductor technology explored at different wavelengths, from the visible domain to the infrared or ultraviolet spectrum. In this paper, after an accurate ellipsometric and micro-Raman spectroscopy characterization, the temperature dependence of the thermo-optic coefficient ([Formula: see text]) for 4H-SiC and GaN in a wide range of temperature between room temperature to T = 500 K in the visible range spectrum, at a wavelength of λ = 632.8 nm, is experimentally evaluated. For this purpose, using the samples as a Fabry-Perot cavity, an interferometric technique is employed. The experimental results, for both semiconductors, show a linear dependence with a high determination coefficient, R² of 0.9648 and 0.958, for 4H-SiC and GaN, respectively, in the considered temperature range.

Heterogeneous integration of a III-V quantum dot laser on high thermal conductivity silicon carbide

Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III-V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III-V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates with high temperature stability. A large T₀ of 221 K with a relatively temperature-insensitive operation occurs near room temperature, while lasing is sustained up to 105°C. The SiC platform presents a unique and ideal candidate for realizing monolithic integration of optoelectronics, quantum, and nonlinear photonics.

Near-field enhancement of optical second harmonic generation in hybrid gold-lithium niobate nanostructures

Nanophotonics research has focused recently on the ability of nonlinear optical processes to mediate and transform optical signals in a myriad of novel devices, including optical modulators, transducers, color filters, photodetectors, photon sources, and ultrafast optical switches. The inherent weakness of optical nonlinearities at smaller scales has, however, hindered the realization of efficient miniaturized devices, and strategies for enhancing both device efficiencies and synthesis throughput via nanoengineering remain limited. Here, we demonstrate a novel mechanism by which second harmonic generation, a prototypical nonlinear optical phenomenon, from individual lithium niobate particles can be significantly enhanced through nonradiative coupling to the localized surface plasmon resonances of embedded gold nanoparticles. A joint experimental and theoretical investigation of single mesoporous lithium niobate particles coated with a dispersed layer of ~10 nm diameter gold nanoparticles shows that a ~32-fold enhancement of second harmonic generation can be achieved without introducing finely tailored radiative nanoantennas to mediate photon transfer to or from the nonlinear material. This work highlights the limitations of current strategies for enhancing nonlinear optical phenomena and proposes a route through which a new class of subwavelength nonlinear optical platforms can be designed to maximize nonlinear efficiencies through near-field energy exchange.

Investigation of the electro-optic effect in high-Q 4H-SiC microresonators

Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. In this work, we carried out an exploratory investigation of the Pockels effect in high-quality-factor (high-Q) 4H-SiC microresonators and demonstrated gigahertz-level electro-optic modulation for the first time. The extracted Pockels coefficients show certain variations among 4H-SiC wafers from different manufacturers, with the magnitudes of r ₁₃ and r ₃₃ estimated to be in the range of (0.3-0.7) pm/V and (0-0.03) pm/V, respectively.

Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 °C can help to decrease the material absorption loss. We experimentally demonstrate that the wet-oxidation-assisted CMP and the high-temperature annealing can effectively increase the intrinsic quality factor of the 4H-SiC optical microring resonators.

An Introduction to Nonlinear Integrated Photonics Devices: Nonlinear Effects and Materials

The combination of integrated optics technologies with nonlinear photonics, which has led to the growth of nonlinear integrated photonics, has also opened the way to groundbreaking new devices and applications. Here we introduce the main physical processes involved in nonlinear photonics applications, and we discuss the fundaments of this research area, starting from traditional second-order and third-order phenomena and going to ultrafast phenomena. The applications, on the other hand, have been made possible by the availability of suitable materials, with high nonlinear coefficients, and/or by the design of guided-wave structures, which can enhance the material's nonlinear properties. A summary of the most common nonlinear materials is presented, together with a discussion of the innovative ones. The discussion of fabrication processes and integration platforms is the subject of a companion article, also submitted for publication in this journal. There, several examples of nonlinear photonic integrated devices to be employed in optical communications, all-optical signal processing and computing, or quantum optics are shown, too. We aimed at offering a broad overview, even if, certainly, not exhaustive. We hope that the overall work could provide guidance for those who are newcomers to this field and some hints to the interested researchers for a more detailed investigation of the present and future development of this hot and rapidly growing field.

Hyperparametric Oscillation via Bound States in the Continuum

Optical hyperparametric oscillation based on the third-order nonlinearity is one of the most significant mechanisms to generate coherent electromagnetic radiation and produce quantum states of light. Advances in dispersion-engineered high-Q microresonators allow for generating signal waves far from the pump and decrease the oscillation power threshold to submilliwatt levels. However, the pump-to-signal conversion efficiency and absolute signal power are low, fundamentally limited by parasitic mode competition and attainable cavity intrinsic Q to coupling Q ratio, i.e., Q_{i}/Q_{c}. Here, we use Friedrich-Wintgen bound states in the continuum (BICs) to overcome the physical challenges in an integrated microresonator-waveguide system. As a result, on-chip coherent hyperparametric oscillation is generated in BICs with unprecedented conversion efficiency and absolute signal power. This work not only opens a path to generate high-power and efficient continuous-wave electromagnetic radiation in Kerr nonlinear media but also enhances the understanding of a microresonator-waveguide system-an elementary unit of modern photonics.

A 3C-SiC-on-Insulator-Based Integrated Photonic Platform Using an Anodic Bonding Process with Glass Substrates

Various crystalline silicon carbide (SiC) polytypes are emerging as promising photonic materials due to their wide bandgap energies and nonlinear optical properties. However, their wafer forms cannot readily provide a refractive index contrast for optical confinement in the SiC layer, which makes it difficult to realize a SiC-based integrated photonic platform. In this paper, we demonstrate a 3C-SiC-on-insulator (3C-SiCoI)-based integrated photonic platform by transferring the epitaxial 3C-SiC layer from a silicon die to a borosilicate glass substrate using anodic bonding. By fine-tuning the fabrication process, we demonstrated nearly 100% area transferring die-to-wafer bonding. We fabricated waveguide-coupled microring resonators using sulfur hexafluoride (SF6)-based dry etching and demonstrated a moderate loaded quality (Q) factor of 1.4 × 105. We experimentally excluded the existence of the photorefractive effect in this platform at sub-milliwatt on-chip input optical power levels. This 3C-SiCoI platform is promising for applications, including large-scale integration of linear, nonlinear and quantum photonics.

Thermal oscillation in the hybrid Si3N4 - TiO2 microring

The hybrid microcavity composed of different materials shows unique thermal-optical properties such as resonance frequency shift and small thermal noise fluctuations with the temperature variation. Here, we have fabricated the hybrid Si₃N₄ - TiO₂ microring, which decreases the effective thermo-optical coefficients (TOC) from 23.2pm/K to 11.05pm/K due to the opposite TOC of these two materials. In this hybrid microring, we experimentally study the thermal dynamic with different input powers and scanning speeds. The distorted transmission and thermal oscillation are observed, which results from the non-uniform scanning speed and the different thermal relaxation times of the Si₃N₄ and the TiO₂. We calibrate the distorted transmission spectrum for the resonance measurement at the reverse scanning direction and explain the thermal oscillation with a thermal-optical coupled model. Finally, we analyse the thermal oscillation condition and give the diagram about the oscillation region, which has significant guidance for the occurrence and avoidance of the thermal oscillation in practical applications.

Novel Photonic Applications of Silicon Carbide

Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

Photo-induced cascaded harmonic and comb generation in silicon nitride microresonators

Silicon nitride (Si3N4) is an ever-maturing integrated platform for nonlinear optics but mostly considered for third-order [χ(3)] nonlinear interactions. Recently, second-order [χ(2)] nonlinearity was introduced into Si3N4 via the photogalvanic effect, resulting in the inscription of quasi-phase-matched χ(2) gratings. However, the full potential of the photogalvanic effect in microresonators remains largely unexplored for cascaded effects. Here, we report combined χ(2) and χ(3) nonlinear effects in a normal dispersion Si3N4 microresonator. We demonstrate that the photo-induced χ(2) grating also provides phase-matching for the sum-frequency generation process, enabling the initiation and successive switching of primary combs. In addition, the doubly resonant pump and second-harmonic fields allow for effective third-harmonic generation, where a secondary optically written χ(2) grating is identified. Last, we reach a broadband microcomb state evolved from the sum-frequency-coupled primary comb. These results expand the scope of cascaded effects in microresonators.

Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC

Raman scattering spectroscopy (RSS) has the merits of non-destructiveness, fast analysis, and identification of SiC polytype materials. By way of angle-dependent Raman scattering (ADRS), the isotropic characteristics are confirmed for c-face 4H-SiC, while the anisotropic properties of a-face 4H-SiC are revealed and studied in detail via combined experiments and theoretical calculation. The variation functional relationship of the angle between the incident laser polarization direction and the parallel (perpendicular) polarization direction was well established. The selection rules of wurtzite 4H-SiC are deduced, and the intensity variations of the A₁, E_2, and E₁ Raman phonon modes dependent on the incident angle are calculated, and well-matched with experimental data. Raman tensor elements of various modes are determined.

Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform

Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible, such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume. Silicon nitride has become the leading CMOS platform for integrated soliton devices, however, it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation. Other materials have emerged such as AlN, LiNbO₃, AlGaAs and GaP that exhibit simultaneous second- and third-order nonlinearities. Here, we show that silicon carbide (SiC) -- already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics, MOSFET, and MEMS due to its wide bandgap properties, excellent mechanical properties, piezoelectricity and chemical inertia -- is a new competitive CMOS-compatible platform for nonlinear photonics. High-quality-factor microresonators (Q = 4 × 10⁶) are fabricated on 4H-SiC-on-insulator thin films, where a single soliton microcomb is generated. In addition, we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC. Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.

Optical bi-stability in cubic silicon carbide microring resonators

We measure the photothermal nonlinear response in suspended cubic silicon carbide (3C-SiC) and 3C-SiC-on-insulator (SiCOI) microring resonators. Bi-stability and thermo-optic hysteresis is observed in both types of resonators, with the suspended resonators showing a stronger response. A photothermal nonlinear index of 4.02×10^-15 m²/W is determined for the suspended resonators, while the SiCOI resonators demonstrate one order of magnitude lower photothermal nonlinear index of 4.32×10^-16 m²/W. Cavity absorption and temperature analysis suggest that the differences in thermal bi-stability are due to variations in waveguide absorption, likely from crystal defect density differences throughout the epitaxially grown layers. Furthermore, coupled mode theory model shows that the strength of the optical bi-stability, in suspended and SiCOI resonators can be engineered for high power or nonlinear applications.

Electron Microscopy Probing Electron-Photon Interactions in SiC Nanowires with Ultrawide Energy and Momentum Match

Light-matter interactions are commonly probed by optical spectroscopy, which, however, has some fundamental limitations such as diffraction-limited spatial resolution, tiny momentum transfer, and noncontinuous excitation/detection. In this work, through the use of scanning transmission electron microscopy-electron energy loss spectroscopy (STEM-EELS) with ultrawide energy and momentum match and subnanometer spatial resolution, the longitudinal Fabry-Perot (FP) resonating modes and the transverse whispering-gallery modes (WGMs) in individual SiC nanowires are simultaneously excited and detected, which span from near-infrared (∼1.2 μm) to ultraviolet (∼0.2 μm) spectral regime, and the momentum transfer can range up to 10⁸ cm^-1. The size effects on the resonant spectra of nanowires are also revealed. This work provides an alternative technique to optical resonating spectroscopy and light-matter interactions in dielectric nanostructures, which is promising for modulating free electrons via photonic structures.

Multifunctional SiC@SiO2 Nanofiber Aerogel with Ultrabroadband Electromagnetic Wave Absorption

Traditional ceramic materials are generally brittle and not flexible with high production costs, which seriously hinders their practical applications. Multifunctional nanofiber ceramic aerogels are highly desirable for applications in extreme environments, however, the integration of multiple functions in their preparation is extremely challenging. To tackle these challenges, we fabricated a multifunctional SiC@SiO₂ nanofiber aerogel (SiC@SiO₂ NFA) with a three-dimensional (3D) porous cross-linked structure through a simple chemical vapor deposition method and subsequent heat-treatment process. The as-prepared SiC@SiO₂ NFA exhibits an ultralow density (~ 11 mg cm^- 3), ultra-elastic, fatigue-resistant and refractory performance, high temperature thermal stability, thermal insulation properties, and significant strain-dependent piezoresistive sensing behavior. Furthermore, the SiC@SiO₂ NFA shows a superior electromagnetic wave absorption performance with a minimum refection loss (RL_min) value of - 50.36 dB and a maximum effective absorption bandwidth (EAB_max) of 8.6 GHz. The successful preparation of this multifunctional aerogel material provides a promising prospect for the design and fabrication of the cutting-edge ceramic materials.

Defect Inspection Techniques in SiC

With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

High-pressure Bandgap Engineering and Amorphization in TiNb2O7 Single Crystals

Titanium niobate (TiNb2O7) possesses excellent photocatalytic, dielectric properties, and lithium-insertion capacity. And high-pressure (HP) is a powerful tool for bandgap engineering aiming at widening their applications. Herein, we report the...