Hot-electron transfer in quantum-dot heterojunction films

Ligand Controls Excited Charge Carrier Dynamics in Metal-Rich CdSe Quantum Dots: Computational Insights

Small metal-rich semiconducting quantum dots (QDs) are promising for solid-state lighting and single-photon emission due to their highly tunable yet narrow emission line widths. Nonetheless, the anionic ligands commonly employed to passivate these QDs exert a substantial influence on the optoelectronic characteristics, primarily owing to strong electron-phonon interactions. In this work, we combine time-domain density functional theory and nonadiabatic molecular dynamics to investigate the excited charge carrier dynamics of Cd28Se17X22 QDs (X = HCOO-, OH-, Cl-, and SH-) at ambient conditions. These chemically distinct but regularly used molecular groups influence the dynamic surface-ligand interfacial interactions in Cd-rich QDs, drastically modifying their vibrational characteristics. The strong electron-phonon coupling leads to substantial transient variations at the band edge states. The strength of these interactions closely depends on the physicochemical characteristics of passivating ligands. Consequently, the ligands largely control the nonradiative recombination rates and emission characteristics in these QDs. Our simulations indicate that Cd28Se17(OH)22 has the fastest nonradiative recombination rate due to the strongest electron-phonon interactions. Conversely, QDs passivated with thiolate or chloride exhibit considerably longer carrier lifetimes and suppressed nonradiative processes. The ligand-controlled electron-phonon interactions further give rise to the broadest and narrowest intrinsic optical line widths for OH and Cl-passivated single QDs, respectively. Obtained computational insights lay the groundwork for designing appropriate passivating ligands on metal-rich QDs, making them suitable for a wide range of applications, from blue LEDs to quantum emitters.

Charge Transfer from Quantum-Confined 0D, 1D, and 2D Nanocrystals

The properties of colloidal quantum-confined semiconductor nanocrystals (NCs), including zero-dimensional (0D) quantum dots, 1D nanorods, 2D nanoplatelets, and their heterostructures, can be tuned through their size, dimensionality, and material composition. In their photovoltaic and photocatalytic applications, a key step is to generate spatially separated and long-lived electrons and holes by interfacial charge transfer. These charge transfer properties have been extensively studied recently, which is the subject of this Review. The Review starts with a summary of the electronic structure and optical properties of 0D-2D nanocrystals, followed by the advances in wave function engineering, a novel way to control the spatial distribution of electrons and holes, through their size, dimension, and composition. It discusses the dependence of NC charge transfer on various parameters and the development of the Auger-assisted charge transfer model. Recent advances in understanding multiple exciton generation, decay, and dissociation are also discussed, with an emphasis on multiple carrier transfer. Finally, the applications of nanocrystal-based systems for photocatalysis are reviewed, focusing on the photodriven charge separation and recombination processes that dictate the function and performance of these materials. The Review ends with a summary and outlook of key remaining challenges and promising future directions in the field.

Machine-Learned Kohn-Sham Hamiltonian Mapping for Nonadiabatic Molecular Dynamics

In this work, we report a simple, efficient, and scalable machine-learning (ML) approach for mapping non-self-consistent Kohn-Sham Hamiltonians constructed with one kind of density functional to the nearly self-consistent Hamiltonians constructed with another kind of density functional. This approach is designed as a fast surrogate Hamiltonian calculator for use in long nonadiabatic dynamics simulations of large atomistic systems. In this approach, the input and output features are Hamiltonian matrices computed from different levels of theory. We demonstrate that the developed ML-based Hamiltonian mapping method (1) speeds up the calculations by several orders of magnitude, (2) is conceptually simpler than alternative ML approaches, (3) is applicable to different systems and sizes and can be used for mapping Hamiltonians constructed with arbitrary density functionals, (4) requires a modest training data, learns fast, and generates molecular orbitals and their energies with the accuracy nearly matching that of conventional calculations, and (5) when applied to nonadiabatic dynamics simulation of excitation energy relaxation in large systems yields the corresponding time scales within the margin of error of the conventional calculations. Using this approach, we explore the excitation energy relaxation in C60 fullerene and Si75H64 quantum dot structures and derive qualitative and quantitative insights into dynamics in these systems.

Multi-pixels gallium oxide UV detector array and optoelectronic applications

With the continuous advancement of deep-ultraviolet (DUV) communication and optoelectronic detection, research in this field has become a significant focal point in the scientific community. For more accurate information collection and transport, the photodetector array of many pixels is the key of the UV imaging and commnication systems, and its photoelectric performance seriously depends on semiconductor material and array layout. Gallium oxide (Ga2O3) is an emerging wide bandgap semicondutor material which has been widely used in DUV dectection. Therefore, this paper mainly focuses on Ga2O3semiconductor detector array which has gained widespread attention in the field of DUV technique, from the perspective of individual device to array and its optoelectonic integration, for reviewing and discussing the research progress in design, fabrication, and application of Ga2O3arrays in recent years. It includes the structure design and material selection of array units, units growth and array layout, response to solar blind light, the method of imaging and image recognition. Morever, the future development trend of the photodetector array has been analyzed and reflected, aiming to provide some useful suggestions for the optimizing array structure, improving patterned growth technology and material growth quality. As well as Ga2O3optoelectronic devices and their applications are discussed in view of device physics and photophysics in detector.

Slow Hole Localization and Fast Electron Cooling in Cu-Doped InP/ZnSe Quantum Dots

Impurity doping of low-dimensional semiconductors is an interesting route towards achieving control over carrier dynamics and energetics, e.g., to improve hot carrier extraction, or to obtain strongly Stokes shifted luminescence. Such studies remain, however, underexplored for the emerging family of III-V colloidal quantum dots (QDs). Here, we show through a detailed global analysis of multiresonant pump-probe spectroscopy that electron cooling in copper-doped InP quantum dot (QDs) proceeds on subpicosecond time scales. Conversely, hole localization on Cu dopants is remarkably slow (1.8 ps), yet still leads to very efficient subgap emission. Due to this slow hole localization, common Auger assisted pathways in electron cooling cannot be blocked by Cu doping III-V systems, in contrast with the case of II-VI QDs. Finally, we argue that the structural relaxation around the Cu dopants, estimated to impart a reorganization energy of 220 meV, most likely proceeds simultaneously with the localization itself leading to efficient luminescence.

Probing the charge transfer mechanisms in type-II Cs2AgBiBr6-CdSe composite system: ultrafast insights

Lead-free halide-based double perovskites (DPs) have established themselves as the emerging nontoxic alternatives for photovoltaic (PV) applications thus substituting the long-standing lead halide perovskites. Among the prospective lead-free DPs, Cs₂AgBiBr₆has gained immense popularity owing to the fascinating properties demonstrated by them including low carrier effective mass and microsecond lifetime for electron-hole recombination. Nevertheless, the large, indirect bandgap remains the prime hurdle that restrains commercialization of the Cs₂AgBiBr₆DPs based PV devices. A rational solution could be designing its heterostructure with another suitable material that could mitigate the inadequacies of Cs₂AgBiBr₆DPs. With this line of thought, herein we synthesized a composite of Cs₂AgBiBr₆DPs with CdSe NCs and then performed transient absorption (TA) spectroscopic measurements to introspect its photophysical aspects. Executing excitation energy-dependent studies clearly reveal the carrier transfer efficiency to be strongly pump-dependent. Upon exciting with 350 nm pump, in compliance with the energy band alignment and tendency of both the constituents to be photoexcited across their bandgap, there is a bidirectional transfer of hot electrons anticipated in the composite system. Nevertheless, the TA outcomes indicate the transfer of hot electrons from CdSe to Cs₂AgBiBr₆to be more favorable out of the bidirectional pathways. Employing further lower pump energies (480 nm) when only CdSe NCs are capable of being excited, the transfer efficiency of the electrons from CdSe to Cs₂AgBiBr₆is noticed to be fairly low. Besides this, when the pump wavelength is tuned to 530 nm i.e. quite close to the CdSe band edge, no electron transfer is noticeable despite the anticipation from thermodynamic feasibility. Thus, as reflected by the TA kinetics, electron transfer is discerned to be more efficient from the hot states rather than the band edges. Most advantageously, charge separation is successfully achieved in this never explored composite architecture which eases the carrier extraction and minimizes the otherwise prevalent fast recombination processes.

Nonadiabatic Molecular Dynamics with Extended Density Functional Tight-Binding: Application to Nanocrystals and Periodic Solids

In this work, we report a new methodology for nonadiabatic molecular dynamics calculations within the extended tight-binding (xTB) framework. We demonstrate the applicability of the developed approach to finite and periodic systems with thousands of atoms by modeling "hot" electron relaxation dynamics in silicon nanocrystals and electron-hole recombination in both a graphitic carbon nitride monolayer and a titanium-based metal-organic framework (MOF). This work reports the nonadiabatic dynamic simulations in the largest Si nanocrystals studied so far by the xTB framework, with diameters up to 3.5 nm. For silicon nanocrystals, we find a non-monotonic dependence of "hot" electron relaxation rates on the nanocrystal size, in agreement with available experimental reports. We rationalize this relationship by a combination of decreasing nonadiabatic couplings related to system size and the increase of available coherent transfer pathways in systems with higher densities of states. We emphasize the importance of proper treatment of coherences for obtaining such non-monotonic dependences. We characterize the electron-hole recombination dynamics in the graphitic carbon nitride monolayer and the Ti-containing MOF. We demonstrate the importance of spin-adaptation and proper sampling of surface hopping trajectories in modeling such processes. We also assess several trajectory surface hopping schemes and highlight their distinct qualitative behavior in modeling the excited-state dynamics in superexchange-like models depending on how they handle coherences between nearly parallel states.

Multiple MMCT properties of the diruthenium-based cyanido-bridged complex RuVI2-NC-RuII-CN-RuVI2

The diruthenium-based linear mixed valence complex trans-[Ru₂(ap)₄-NC-Ru(DMAP)₄-CN-Ru₂(ap)₄][PF₆]₂ (12+[PF6]2) (ap = 2-anilinopyridinate, DMAP = 4-dimethylaminopyridine) and its two-electron oxidation product 14+[PF6]4 have been synthesized and fully characterized. The investigation reveals that complex 12+ displays a single MMCT transition, whereas complex 14+ has three identified MMCT transitions (MMCT-1, MMCT-2 and MMCT-3) upon oxidation. Interestingly, MMCT-2 in complex 14+ might result from the transition from the Ru^III-NC-Ru^II-CN-Ru^III component, which is composed of the central Ru^II and its two neighboring Ru^III atoms from the cluster RuVI2 units, to both the terminal Ru^III atoms of the same cluster RuVI2 units, which is supported by the TDDFT calculations.

Probing ultrafast hot charge carrier migration in MoS2 embedded CdS nanorods

Efficient utilization of hot charge carriers is of utmost benefit for a semiconductor-based optoelectronic device. Herein, a one-dimensional (1D)/two-dimensional (2D) heterojunction was fabricated in the form of CdS/MoS₂ nanorod/nanosheet composite and migration of hot charge carriers was being investigated with the help of transient absorption (TA) spectroscopy. The band alignment was such that both the electrons and holes in the CdS region tend to migrate into the MoS₂ region following photoexcitation. The composite system is composed of optical signatures of both CdS and MoS₂, with the dominance of CdS nanorods. In addition, the TA signal of MoS₂ is substantially enhanced in the heterosystem at the cost of the diminished CdS signal, confirming the migration of charge carrier population from CdS to MoS₂. This migration phenomenon was dominated by the hot carrier transfer. The hot carriers in the high energy states of CdS are preferentially migrated into the MoS₂ states rather than being cooled to the band edge. The hot carrier transfer time for a 400 nm pump excitation was calculated to be 0.21 ps. This is much faster than the band edge electron transfer process, occurring at 2.0 ps time scale. We found that these migration processes are very much dependent on the applied pump photon energy. Higher energy pump photons are more efficient in the hot carrier transfer process and place these hot carriers in the higher energy states of MoS₂, further extending charge carrier separation. This detailed spectroscopic investigation would help in the fabrication of better 1D/2D heterojunctions and advance the optoelectronic field.

Subpicosecond Hot Hole Transfer in a Graphene Quantum Dot Composite with High Efficiency

Extraction of hot carriers is of prime importance because of its potential to overcome the energy loss that limits the efficiency of an optoelectronic device. Employing a femtosecond upconversion setup, herein we report a few picoseconds carrier cooling time of colloidal graphene quantum dots (GQDs) is at least an order of magnitude slower compared to that in its bulk form. A slower carrier cooling time of GQDs compared to that of the other semiconductor quantum dots and their bulk materials is indeed a coveted property of GQDs that would allow one easy harvesting of high energy species employing a suitable molecular system as shown in this study. A subpicosecond hot hole transfer time scale has been achieved in a GQD-molecular system composite with high transfer efficiency. Our finding suggests a dramatic enhancement of the efficiency of GQD based optoelectronic devices can possibly be a reality.

Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector

Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first-time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe-based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high-performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale.

Long-lived charge separation following pump-wavelength-dependent ultrafast charge transfer in graphene/WS2 heterostructures

Van der Waals heterostructures consisting of graphene and transition metal dichalcogenides have shown great promise for optoelectronic applications. However, an in-depth understanding of the critical processes for device operation, namely, interfacial charge transfer (CT) and recombination, has so far remained elusive. Here, we investigate these processes in graphene-WS₂ heterostructures by complementarily probing the ultrafast terahertz photoconductivity in graphene and the transient absorption dynamics in WS₂ following photoexcitation. We observe that separated charges in the heterostructure following CT live extremely long: beyond 1 ns, in contrast to ~1 ps charge separation reported in previous studies. This leads to efficient photogating of graphene. Furthermore, for the CT process across graphene-WS₂ interfaces, we find that it occurs via photo-thermionic emission for sub-A-exciton excitations and direct hole transfer from WS₂ to the valence band of graphene for above-A-exciton excitations. These findings provide insights to further optimize the performance of optoelectronic devices, in particular photodetection.

Simultaneous Photonic and Excitonic Coupling in Spherical Quantum Dot Supercrystals

Semiconductor nanocrystals, or quantum dots (QDs), simultaneously benefit from inexpensive low-temperature solution processing and exciting photophysics, making them the ideal candidates for next-generation solar cells and photodetectors. While the working principles of these devices rely on light absorption, QDs intrinsically belong to the Rayleigh regime and display optical behavior limited to electric dipole resonances, resulting in low absorption efficiencies. Increasing the absorption efficiency of QDs, together with their electronic and excitonic coupling to enhance charge carrier mobility, is therefore of critical importance to enable practical applications. Here, we demonstrate a general and scalable approach to increase both light absorption and excitonic coupling of QDs by fabricating hierarchical metamaterials. We assemble QDs into crystalline supraparticles using an emulsion template and demonstrate that these colloidal supercrystals (SCs) exhibit extended resonant optical behavior resulting in an enhancement in absorption efficiency in the visible range of more than 2 orders of magnitude with respect to the case of dispersed QDs. This successful light trapping strategy is complemented by the enhanced excitonic coupling observed in ligand-exchanged SCs, experimentally demonstrated through ultrafast transient absorption spectroscopy and leading to the formation of a free biexciton system on sub-picosecond time scales. These results introduce a colloidal metamaterial designed by self-assembly from the bottom up, simultaneously featuring a combination of nanoscale and mesoscale properties leading to simultaneous photonic and excitonic coupling, therefore presenting the nanocrystal analogue of supramolecular structures.

Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer

Energy loss from hot-carrier cooling sets the thermodynamic limit for the photon-to-power conversion efficiency in optoelectronic applications. Efficient hot-electron extraction before cooling could reduce the energy loss and leads to efficient next generation devices, which, unfortunately, is challenging to achieve in conventional semiconductors. In this work, we explore hot-electron transfer in two-dimensional (2D) layered semiconductor heterostructures, which have shown great potential for exploring new physics and optoelectronic applications. Using broadband micro-area ultrafast spectroscopy, we firmly established a type I band alignment in the WS₂-MoTe₂ heterostructure and ultrafast (∼60 fs) hot-electron transfer from photoexcited MoTe₂ to WS₂. The hot-electron transfer efficiency increases with excitation energy or excess energy as a result of a more favorable continuous competition between resonant electron transfer and cooling, reaching 90% for hot electrons with 0.3 eV excess energy. This study reveals exciting opportunities of designing extremely thin absorber and hot-carrier devices using 2D semiconductors and also sheds important light on the photoinduced interfacial process including charge transfer and generation in 2D heterostructures and optoelectronic devices.

Coherent Exciton Dynamics in Ensembles of Size-Dispersed CdSe Quantum Dot Dimers Probed via Ultrafast Spectroscopy: A Quantum Computational Study

Interdot coherent excitonic dynamics in nanometric colloidal CdSe quantum dots (QD) dimers lead to interdot charge migration and energy transfer. We show by electronic quantum dynamical simulations that the interdot coherent response to ultrashort fs laser pulses can be characterized by pump-probe transient absorption spectroscopy in spite of the inevitable inherent size dispersion of colloidal QDs. The latter, leading to a broadening of the excitonic bands, induce accidental resonances that actually increase the efficiency of the interdot coupling. The optical electronic response is computed by solving the time-dependent Schrodinger equation including the interaction with the oscillating electric field of the pulses for an ensemble of dimers that differ by their size. The excitonic Hamiltonian of each dimer is parameterized by the QD size and interdot distance, using an effective mass approximation. Local and charge transfer excitons are included in the dimer basis set. By tailoring the QD size, the excitonic bands can be tuned to overlap and thus favor interdot coupling. Computed pump-probe transient absorption maps averaged over the ensemble show that the coherence of excitons in QD dimers that lead to interdot charge migration can survive size disorder and could be observed in fs pump-probe, four-wave mixing, or covariance spectroscopy.

Modeling nonadiabatic dynamics in condensed matter materials: some recent advances and applications

This review focuses on recent developments in the field of nonadiabatic molecular dynamics (NA-MD), with particular attention given to condensed-matter systems. NA-MD simulations for small molecular systems can be performed using high-level electronic structure (ES) calculations, methods accounting for the quantization of nuclear motion, and using fewer approximations in the dynamical methodology itself. Modeling condensed-matter systems imposes many limitations on various aspects of NA-MD computations, requiring approximations at various levels of theory-from the ES, to the ways in which the coupling of electrons and nuclei are accounted for. Nonetheless, the approximate treatment of NA-MD in condensed-phase materials has gained a spin lately in many applied studies. A number of advancements of the methodology and computational tools have been undertaken, including general-purpose methods, as well as those tailored to nanoscale and condensed matter systems. This review summarizes such methodological and software developments, puts them into the broader context of existing approaches, and highlights some of the challenges that remain to be solved.

Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices

The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.

Fast, Infrared-Active Optical Transistors Based on Dye-Sensitized CdSe Nanocrystals

We report an optically gated transistor composed of CdSe nanocrystals (NCs), sensitized with the dye zinc β-tetraaminophthalocyanine for operation in the first telecom window. This device shows a high ON/OFF ratio of 6 orders of magnitude in the red spectral region and an unprecedented 4.5 orders of magnitude at 847 nm. By transient absorption spectroscopy, we reveal that this unexpected infrared sensitivity is due to electron transfer from the dye to the CdSe NCs within 5 ps. We show by time-resolved photocurrent measurements that this enables fast rise times during near-infrared optical gating of 47 ± 11 ns. Electronic coupling and accelerated nonradiative recombination of charge carriers at the interface between the dye and the CdSe NCs are further corroborated by steady-state and time-resolved photoluminescence measurements. Field-effect transistor measurements indicate that the increase in photocurrent upon laser illumination is mainly due to the increase in the carrier concentration while the mobility remains unchanged. Our results illustrate that organic dyes as ligands for NCs invoke new optoelectronic functionalities, such as fast optical gating at sub-bandgap optical excitation energies.

Engineering the Band Alignment in QD Heterojunction Films via Ligand Exchange

Colloidal quantum dots (QDs) allow great flexibility in the design of optoelectronic devices, thanks to their size-dependent optical and electronic properties and the possibility to fabricate thin films with solution-based processing. In particular, in QD-based heterojunctions, the band gap of both components can be controlled by varying the size of the QDs. However, control over the band alignment between the two materials is required to tune the dynamics of carrier transfer across a heterostructure. We demonstrate that ligand exchange strategies can be used to control the band alignment of PbSe and CdSe QDs in a mixed QD solid, shifting it from a type-I to a type-II alignment. The change in alignment is observed in both spectroelectrochemical and transient absorption measurements, leading to a change in the energy of the conduction band edges in the two materials and in the direction of electron transfer upon photoexcitation. Our work demonstrates the possibility to tune the band offset of QD heterostructures via control of the chemical species passivating the QD surface, allowing full control over the energetics of the heterostructure without requiring changes in the QD composition.

Ultrafast Hot Carrier Injection in Au/GaN: The Role of Band Bending and the Interface Band Structure

Plasmon photochemistry can potentially play a significant role in photocatalysis. To realize this potential, it is critical to enhance the plasmon excited hot carrier transfer and collection. However, the lack of atomistic understanding of the carrier transfer across the interface, especially when the carrier is still "hot", makes it challenging to design a more efficient system. In this work, we apply the nonadiabatic molecular dynamics simulation to study hot carrier dynamics in the system of a Au nanocluster on top of a GaN surface. By setting up the initial excited hole in Au, the carrier transfer from Au to GaN is found to be on a subpicosecond time scale. The hot hole first cools to the band edge of Au d-states while it transfers to GaN. After the hole has cooled down to the band edge of GaN, we find that some of the charges can return back to Au. By applying different external potentials to mimic the Schottky barrier band bending, the returning charge can be reduced, demonstrating the importance of the internal electric field. Finally, with the understanding of the carrier transfer's pathway, we suggest that a ZnO layer between GaN and Au can effectively block the "cold" carrier from returning back to Au but still allow the hot carrier to transfer from Au to GaN.

Fast Photoelectric Conversion in the Near-Infrared Enabled by Plasmon-Induced Hot-Electron Transfer

Interfacial charge transfer is a fundamental and crucial process in photoelectric conversion. If charge transfer is not fast enough, carrier harvesting can compromise with competitive relaxation pathways, e.g., cooling, trapping, and recombination. Some of these processes can strongly affect the speed and efficiency of photoelectric conversion. In this work, it is elaborated that plasmon-induced hot-electron transfer (HET) from tungsten suboxide to graphene is a sufficiently fast process to prevent carrier cooling and trapping processes. A fast near-infrared detector empowered by HET is demonstrated, and the response time is three orders of magnitude faster than that based on common band-edge electron transfer. Moreover, HET can overcome the spectral limit of the bandgap of tungsten suboxide (≈2.8 eV) to extent the photoresponse to the communication band of 1550 nm (≈0.8 eV). These results indicate that plasmon-induced HET is a new strategy for implementation of efficient and high-speed photoelectric devices.

Unraveling the Radiative Pathways of Hot Carriers upon Intense Photoexcitation of Lead Halide Perovskite Nanocrystals

The slowdown of carrier cooling in lead halide perovskites (LHP) may allow the realization of efficient hot carrier solar cells. Much of the current effort focuses on the understanding of the mechanisms that retard the carrier relaxation, while proof-of-principle demonstrations of hot carrier harvesting have started to emerge. Less attention has been placed on the impact that the energy and momentum relaxation slowdown imparts on the spontaneous and stimulated light-emission process. LHP nanocrystals (NCs) provide an ideal testing ground for such studies as they exhibit bright emission and high optical gain, while the carrier cooling bottleneck is further pronounced compared to their bulk analogues due to confinement. Herein, the luminescent properties of CsPbBr₃, FAPbBr₃, and FAPbI₃ NCs in the strong photoexcitation regime are investigated. In the former two NC systems, amplified spontaneous emission is found to dominate over the radiative recombination at average carrier occupancy per nanocrystal larger than 5-10. On the other hand, under the same photoexcitation conditions in the FAPbI₃ NCs, a longer lived population of hot carriers results in a competition between hot luminescence, stimulated emission, and defect recombination. The dynamic interplay between the aforementioned three emissive channels appears to be influenced by various experimental and material parameters that include temperature, material purity, film morphology, and excitation pulse width and wavelength.

Photoinduced electron transfer in novel CdSe-Cu2Se type II core-shell quantum dots

Herein we report the synthesis, characterisation and electron transfer studies of CdSe-Cu2Se QDs, a novel type II core-shell system. The synthesis was achieved by a high temperature organometallic method with oleylamine as ligand. Structural and optical properties of the nanostructures were investigated using X-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, energy dispersive X-ray spectroscopy, inductive coupled plasma optical emission spectroscopy, cyclic voltammetry, X-ray photoelectron spectroscopy and absorption spectroscopy. The electron transfer dynamics were investigated by observing the variations in steady state and time resolved emission spectra in the presence of an electron acceptor-methyl viologen. Localization of electrons in the shells was evident from the studies performed indicating efficient charge separation.

Highly Photoconductive InP Quantum Dots Films and Solar Cells

InP and InZnP colloidal quantum dots (QDs) are promising materials for application in light-emitting devices, transistors, photovoltaics, and photocatalytic cells. In addition to possessing an appropriate bandgap, high absorption coefficient, and high bulk carrier mobilities, the intrinsic toxicity of InP and InZnP is much lower than for competing QDs that contain Cd or Pb-providing a potentially safer commercial product. However, compared to other colloidal QDs, InP QDs remain sparsely used in devices and their electronic transport properties are largely unexplored. Here, we use time-resolved microwave conductivity measurements to study charge transport in films of InP and InZnP colloidal quantum dots capped with a variety of short ligands. We find that transport in InP QDs is dominated by trapping effects, which are mitigated in InZnP QDs. We improve charge carrier mobilities with a range of ligand-exchange treatments and for the best treatments reach mobilities and lifetimes on par with those of PbS QD films used in efficient solar cells. To demonstrate the device-grade quality of these films, we construct solar cells based on InP & InZnP QDs with power conversion efficiencies of 0.65 and 1.2%, respectively. This represents a large step forward in developing Cd- and Pb-free next-generation optoelectronic devices.

Spectroelectrochemical Signatures of Surface Trap Passivation on CdTe Nanocrystals

The photoluminescence (PL) quantum yield of semiconductor nanocrystals (NCs) is hampered by in-gap trap states due to dangling orbitals on the surface of the nanocrystals. While crucial for the rational design of nanocrystals, the understanding of the exact origin of trap states remains limited. Here, we treat CdTe nanocrystal films with different metal chloride salts and we study the effect on their optical properties with in situ spectroelectrochemistry, recording both changes in absorption and photoluminescence. For untreated CdTe NC films we observe a strong increase in the PL intensity as the Fermi-level is raised electrochemically and trap states in the bandgap become occupied with electrons. Upon passivation of these in-gap states we observe an increase in the steady state PL and, for the best treatments, we observe that the PL no longer depends on the position of the Fermi level in the band gap, demonstrating the effective removal of trap states. The most effective treatment is obtained for Z-type passivation with CdCl₂, for which the steady state PL increased by a factor 40 and the PL intensity became nearly unaffected by the applied potential. X-ray Photoelectron Spectroscopy measurements show that treatment with ZnCl₂ mainly leads to X-type passivation with chloride ions, which increased the PL intensity by a factor four and made the PL less susceptible to modulation by applying a potential with respect to unpassivated nanocrystal films. We elucidate the spectroelectrochemical signatures of trap states within the bandgap and conclude that undercoordinated Te at the surface constitutes the largest contribution to in-gap trap states, but that other surface states that likely originate on Cd atoms should also be considered.

Enhanced Multiple Exciton Generation in PbS|CdS Janus-like Heterostructured Nanocrystals

Generating multiple excitons by a single high-energy photon is a promising third-generation solar energy conversion strategy. We demonstrate that multiple exciton generation (MEG) in PbS|CdS Janus-like heteronanostructures is enhanced over that of single-component and core/shell nanocrystal architectures, with an onset close to two times the PbS band gap. We attribute the enhanced MEG to the asymmetric nature of the heteronanostructure that results in an increase in the effective Coulomb interaction that drives MEG and a reduction of the competing hot exciton cooling rate. Slowed cooling occurs through effective trapping of hot-holes by a manifold of valence band interfacial states having both PbS and CdS character, as evidenced by photoluminescence studies and ab initio calculations. Using transient photocurrent spectroscopy, we find that the MEG characteristics of the individual nanostructures are maintained in conductive arrays and demonstrate that these quasi-spherical PbS|CdS nanocrystals can be incorporated as the main absorber layer in functional solid-state solar cell architectures. Finally, based upon our analysis, we provide design rules for the next generation of engineered nanocrystals to further improve the MEG characteristics.

A Simple Phase Correction Makes a Big Difference in Nonadiabatic Molecular Dynamics

The outcomes of nonadiabatic molecular dynamics (NA-MD) calculations are modulated by the parameters entering the time-dependent Schrödinger equation (TD-SE). The adiabatic states are commonly used as the basis in which the TD-SE is integrated. However, the phase inconsistencies of such states along the nuclear trajectories obtained in NA-MD simulations may render the wave function and other relevant properties ill-behaving, adversely affecting the dynamics. This work illustrates the consequence of adiabatic state phase inconsistencies in nonadiabatic Ehrenfest dynamics. A simple phase-correction approach is proposed and is demonstrated to alter the dynamics to make it consistent with the reference calculations done in the phase-consistent diabatic representation.

Quantum Dot Solar Cells: Small Beginnings Have Large Impacts

From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.