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Cahaya AB, Leon AO, Fauzi MH. Spin-orbit torque on nuclear spins exerted by a spin accumulation via hyperfine interactions. NANOTECHNOLOGY 2023; 34:505001. [PMID: 37708861 DOI: 10.1088/1361-6528/acf9ac] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Accepted: 09/14/2023] [Indexed: 09/16/2023]
Abstract
Spin-transfer and spin-orbit torques allow controlling magnetic degrees of freedom in various materials and devices. However, while the transfer of angular momenta between electrons has been widely studied, the contribution of nuclear spins has yet to be explored further. This article demonstrates that the hyperfine coupling, which consists of Fermi contact and dipolar interactions, can mediate the application of spin-orbit torques acting on nuclear spins. Our starting point is a sizable nuclear spin in a metal with electronic spin accumulation. Then, via the hyperfine interactions, the nuclear spin modifies the an electronic spin density. The reactions to the equilibrium and nonequilibrium components of the spin density is a torque on the nucleus with field-like and damping-like components, respectively. Thisnuclearspin-orbittorqueis a step toward stabilizing and controlling nuclear magnetic momenta, in magnitude and direction, and realizing nuclear spintronics.
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Affiliation(s)
- Adam B Cahaya
- Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Indonesia, Depok 16424, Indonesia
- Research Center for Quantum Physics, National Research and Innovation Agency, South Tangerang, Banten, 15314, Indonesia
| | - Alejandro O Leon
- Departamento de Física, Facultad de Ciencias Naturales, Matemática y del Medio Ambiente, Universidad Tecnológica Metropolitana, Las Palmeras 3360, Ñuñoa 780-0003, Santiago, Chile
| | - Mohammad H Fauzi
- Research Center for Quantum Physics, National Research and Innovation Agency, South Tangerang, Banten, 15314, Indonesia
- Research Collaboration Center for Quantum Technology 2.0, Bandung 40132, Indonesia
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2
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Rong R, Liu Y, Nie X, Zhang W, Zhang Z, Liu Y, Guo W. The Interaction of 2D Materials With Circularly Polarized Light. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206191. [PMID: 36698292 PMCID: PMC10074140 DOI: 10.1002/advs.202206191] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.
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Affiliation(s)
- Rong Rong
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
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Gilbert SJ, Li M, Chen JS, Yi H, Lipatov A, Avila J, Sinitskii A, Asensio MC, Dowben PA, Yost AJ. Chiral photocurrent in a Quasi-1D TiS 3(001) phototransistor. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:124003. [PMID: 36689777 DOI: 10.1088/1361-648x/acb581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2022] [Accepted: 01/23/2023] [Indexed: 06/17/2023]
Abstract
The presence of in-plane chiral effects, hence spin-orbit coupling, is evident in the changes in the photocurrent produced in a TiS3(001) field-effect phototransistor with left versus right circularly polarized light. The direction of the photocurrent is protected by the presence of strong spin-orbit coupling and the anisotropy of the band structure as indicated in NanoARPES measurements. Dark electronic transport measurements indicate that TiS3is n-type and has an electron mobility in the range of 1-6 cm2V-1s-1.I-Vmeasurements under laser illumination indicate the photocurrent exhibits a bias directionality dependence, reminiscent of bipolar spin diode behavior. Because the TiS3contains no heavy elements, the presence of spin-orbit coupling must be attributed to the observed loss of inversion symmetry at the TiS3(001) surface.
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Affiliation(s)
- Simeon J Gilbert
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588-0299, United States of America
| | - Mingxing Li
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, United States of America
| | - Jia-Shiang Chen
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, United States of America
| | - Hemian Yi
- Synchrotron SOLEIL and Université Paris-Saclay, L'Orme des Merisiers, BP48, 91190 Saint-Aubin, France
| | - Alexey Lipatov
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588-0304, United States of America
| | - Jose Avila
- Synchrotron SOLEIL and Université Paris-Saclay, L'Orme des Merisiers, BP48, 91190 Saint-Aubin, France
| | - Alexander Sinitskii
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588-0304, United States of America
| | - Maria C Asensio
- Materials Science Institute of Madrid (ICMM), Spanish Scientific Research Council (CSIC), and MATINÉE: the CSIC Research Associated between the Institute of Materiasl Sciences of the Valencia University (ICMUV) and the ICMM, Cantoblanco, E-28049 Madrid, Spain
| | - Peter A Dowben
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588-0299, United States of America
| | - Andrew J Yost
- Department of Physics, Oklahoma State University, Stillwater, OK 74078-3072, United States of America
- Oklahoma Photovoltaic Research Institute, Oklahoma State University, Stillwater, OK, United States of America
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4
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Naskar S, Mujica V, Herrmann C. Chiral-Induced Spin Selectivity and Non-equilibrium Spin Accumulation in Molecules and Interfaces: A First-Principles Study. J Phys Chem Lett 2023; 14:694-701. [PMID: 36638217 DOI: 10.1021/acs.jpclett.2c03747] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Electrons moving through chiral molecules are selected according to their spin orientation and the helicity of the molecule, an effect known as chiral-induced spin selectivity (CISS). The underlying physical mechanism is not yet completely understood. To help elucidate this mechanism, a non-equilibrium Green's function method, combined with a Landauer approach and density functional theory, is applied to carbon helices contacted by gold electrodes, resulting in spin polarization of transmitted electrons. Spin polarization is also observed in the non-equilibrium electronic structure of the junctions. While this spin polarization is small, its sign changes with the direction of the current and with the handedness of the molecule. While these calculations were performed with a pure exchange-correlation functional, previous studies suggest that computationally more expensive hybrid functionals may lead to considerably larger spin polarization in the electronic structure. Thus, non-equilibrium spin polarization could be a key component in understanding the CISS mechanism.
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Affiliation(s)
- Sumit Naskar
- Department of Chemistry, University of Hamburg, Harbor Building 610, Luruper Chaussee 149, 22761Hamburg, Germany
- The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Luruper Chaussee 149, 22761Hamburg, Germany
| | - Vladimiro Mujica
- School of Molecular Sciences, Arizona State University, Tempe, Arizona85287, United States
- Kimika Fakultatea, Euskal Herriko Unibertsitatea UPV/EHU and Donostia International Physics Center, Manuel de Lardizabal Pasealekua 3, 20018Donostia, Euskadi, Spain
| | - Carmen Herrmann
- Department of Chemistry, University of Hamburg, Harbor Building 610, Luruper Chaussee 149, 22761Hamburg, Germany
- The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Luruper Chaussee 149, 22761Hamburg, Germany
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Yang H, Schmoranzerová E, Jang P, Nath J, Guillet T, Joumard I, Auffret S, Jamet M, Němec P, Gaudin G, Miron IM. Helicity dependent photoresistance measurement vs. beam-shift thermal gradient. Nat Commun 2022; 13:6790. [PMID: 36357377 PMCID: PMC9649656 DOI: 10.1038/s41467-022-34198-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2022] [Accepted: 10/17/2022] [Indexed: 11/11/2022] Open
Abstract
Optical detection techniques are among the most powerful methods used to characterize spintronic phenomena. The spin orientation can affect the light polarization, which, by the reciprocal mechanism, can modify the spin density. Numerous recent experiments, report local changes in the spin density induced by a circularly polarized focused laser beam. These effects are typically probed electrically, by detecting the variations of the photoresistance or photocurrent associated to the reversal of the light helicity. Here we show that in general, when the light helicity is modified, the beam profile is slightly altered, and the barycenter of the laser spot is displaced. Consequently, the temperature gradients produced by the laser heating will be modulated, producing thermo-electric signals that alternate in phase with the light polarization. These unintended signals, having no connection with the electron spin, appear under the same experimental conditions and can be easily misinterpreted. We show how this contribution can be experimentally assessed and removed from the measured data. We find that even when the beam profile is optimized, this effect is large, and completely overshadows the spin related signals in all the materials and experimental conditions that we have tested. Many recent studies have explored the response of magnetic systems to circularly polarised light. To achieve this, typically experiments use a birefringent crystal. Here, Yang et al show that any small error in the alignment of the crystal can result in a beam shift, and this shift can lead to spurious signals similar yet unrelated to the electron spin.
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Tang W, Liu H, Li Z, Pan A, Zeng Y. Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100847. [PMID: 34323390 PMCID: PMC8456225 DOI: 10.1002/advs.202100847] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2021] [Revised: 06/03/2021] [Indexed: 06/13/2023]
Abstract
Spin-orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high-performance SOT devices, which strongly rely on the spin-orbit coupling (SOC) strength and magnetic properties of ferromagnetic/non-magnetic heterostructures. Recently, van der Waals-layered materials have shown appealing properties for use in efficient SOT applications. On the one hand, transition-metal dichalcogenides, topological insulators, and graphene-based heterostructures possess appreciable SOC strength. This feature can efficiently converse the charge current into spin current and result in large SOT. On the other hand, the newly discovered layered magnetic materials provide ultra-thin and gate-tunable ferromagnetic candidates for high-performance SOT devices. In this review, the latest advancements of SOT research in various layered materials are summarized. First, a brief introduction of SOT is given. Second, SOT studies of various layered materials and heterostructures are summarized. Subsequently, progresses on SOT-induced magnetization switching are presented. Finally, current challenges and prospects for future development are suggested.
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Affiliation(s)
- Wei Tang
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Haoliang Liu
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Zhe Li
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Anlian Pan
- Key Laboratory for Micro‐Nano Physics and Technology of Hunan ProvinceCollege of Materials Science and EngineeringHunan UniversityChangsha410082China
| | - Yu‐Jia Zeng
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
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Imaging current distribution in a topological insulator Bi 2Se 3 in the presence of competing surface and bulk contributions to conductivity. Sci Rep 2021; 11:7445. [PMID: 33811220 PMCID: PMC8018954 DOI: 10.1038/s41598-021-86706-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2020] [Accepted: 03/15/2021] [Indexed: 11/10/2022] Open
Abstract
Two-dimensional (2D) topological surface states in a three-dimensional topological insulator (TI) should produce uniform 2D surface current distribution. However, our transport current imaging studies on Bi2Se3 thin film reveal non-uniform current sheet flow at 15 K with strong edge current flow. This is consistent with other imaging studies on thin films of Bi2Se3. In contrast to strong edge current flow in thin films, in single crystal of Bi2Se3 at 15 K our current imaging studies show the presence of 3.6 nm thick uniform 2D sheet current flow. Above 70 K, this uniform 2D sheet current sheet begins to disintegrate into a spatially non-uniform flow. The flow becomes patchy with regions having high and low current density. The area fraction of the patches with high current density rapidly decreases at temperatures above 70 K, with a temperature dependence of the form \documentclass[12pt]{minimal}
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\begin{document}$$1/\left| {T - 70} \right|^{0.35}$$\end{document}1/T-700.35. The temperature scale of 70 K coincides with the onset of bulk conductivity in the crystal due to electron doping by selenium vacancy clusters in Bi2Se3. Thus our results show a temperature dependent competition between surface and bulk conductivity produces a temperature dependent variation in uniformity of current flow in the topological insulator.
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Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator. Nat Commun 2021; 12:1404. [PMID: 33658496 PMCID: PMC7930265 DOI: 10.1038/s41467-021-21672-9] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2020] [Accepted: 02/07/2021] [Indexed: 11/08/2022] Open
Abstract
Electrical manipulation of magnetization could be an essential function for energy-efficient spintronics technology. A magnetic topological insulator, possessing a magnetically gapped surface state with spin-polarized electrons, not only exhibits exotic topological phases relevant to the quantum anomalous Hall state but also enables the electrical control of its magnetic state at the surface. Here, we demonstrate efficient current-induced switching of the surface ferromagnetism in hetero-bilayers consisting of the topological insulator (Bi1-xSbx)2Te3 and the ferromagnetic insulator Cr2Ge2Te6, where the proximity-induced ferromagnetic surface states play two roles: efficient charge-to-spin current conversion and emergence of large anomalous Hall effect. The sign reversal of the surface ferromagnetic states with current injection is clearly observed, accompanying the nearly full magnetization reversal in the adjacent insulating Cr2Ge2Te6 layer of an optimal thickness range. The present results may facilitate an electrical control of dissipationless topological-current circuits. Electrical manipulation of magnetization in devices made of topological materials may be an essential route towards future spintronics technology. Here, Mogi et al. show efficient current-induced switching of surface ferromagnetism in hetero-bilayers of topological insulator (Bi1-xSbx)2Te3 and ferromagnetic insulator Cr2Ge2Te6.
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Chen M, Lee K, Li J, Cheng L, Wang Q, Cai K, Chia EEM, Chang H, Yang H. Anisotropic Picosecond Spin-Photocurrent from Weyl Semimetal WTe 2. ACS NANO 2020; 14:3539-3545. [PMID: 32160456 DOI: 10.1021/acsnano.9b09828] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The generation and detection of ultrafast spin current, preferably reaching a frequency up to terahertz, is the core of spintronics. Studies have shown that the Weyl semimetal WTe2 is of great potential in generating spin currents. However, the prior studies have been limited to the static measurements with the in-plane spin orientation. In this work, we demonstrate a picosecond spin-photocurrent in a Td-WTe2 thin film via a terahertz time domain spectroscopy with a circularly polarized laser excitation. The anisotropic dependence of the circular photogalvanic effect (CPGE) in the terahertz emission reveals that the picosecond spin-photocurrent is generated along the rotational asymmetry a-axis. Notably, the generated spins are aligned along the out-of-plane direction under the light normally incident to the film surface, which provides an efficient means to manipulate magnetic devices with perpendicular magnetic anisotropy. A spin-splitting band induced by intrinsic inversion symmetry breaking enables the manipulation of a spin current by modulating the helicity of the laser excitation. Moreover, CPGE nearly vanishes at a transition temperature of ∼175 K due to the carrier compensation. Our work provides an insight into the dynamic behavior of the anisotropic spin-photocurrent of Td-WTe2 in terahertz frequencies and shows a great potential for the future development of terahertz-spintronic devices with Weyl semimetals.
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Affiliation(s)
- Mengji Chen
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
| | - Kyusup Lee
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
| | - Jie Li
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Liang Cheng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Qisheng Wang
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
| | - Kaiming Cai
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
| | - Elbert E M Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
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Wu H, Zhang P, Deng P, Lan Q, Pan Q, Razavi SA, Che X, Huang L, Dai B, Wong K, Han X, Wang KL. Room-Temperature Spin-Orbit Torque from Topological Surface States. PHYSICAL REVIEW LETTERS 2019; 123:207205. [PMID: 31809108 DOI: 10.1103/physrevlett.123.207205] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2019] [Indexed: 06/10/2023]
Abstract
Spin-momentum locked surface states in topological insulators (TIs) provide a promising route for achieving high spin-orbit torque (SOT) efficiency beyond the bulk spin-orbit coupling in heavy metals (HMs). However, in previous works, there is a huge discrepancy among the quantitative SOTs from TIs in various systems determined by different methods. Here, we systematically study the SOT in the TI(HM)/Ti/CoFeB/MgO systems by the same method, and make a conclusive assessment of SOT efficiency for TIs and HMs. Our results demonstrate that TIs show more than one order of magnitude higher SOT efficiency than HMs even at room temperature, at the same time the switching current density as low as 5.2×10^{5} A cm^{-2} is achieved with (Bi_{1-x}Sb_{x})_{2}Te_{3}. Furthermore, we investigate the relationship between SOT efficiency and the position of Fermi level in (Bi_{1-x}Sb_{x})_{2}Te_{3}, where the SOT efficiency is significantly enhanced near the Dirac point, with the most insulating bulk and conducting surface states, indicating the dominating SOT contribution from topological surface states. This work unambiguously demonstrates the ultrahigh SOT efficiency from topological surface states.
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Affiliation(s)
- Hao Wu
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Peng Zhang
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Peng Deng
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Qianqian Lan
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, Jülich 52425, Germany
| | - Quanjun Pan
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Seyed Armin Razavi
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Xiaoyu Che
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Li Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Kin Wong
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Kang L Wang
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
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