Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

Recent Advances in Engineering of 2D Layered Metal Chalcogenides for Resistive-Type Gas Sensor

2D nanomaterials have triggered widespread attention in sensing applications. Especially for 2D layered metal chalcogenides (LMCs), the unique semiconducting properties and high surface area endow them with great potential for gas sensors. The assembly of 2D LMCs with guest species is an effective functionalization method to produce the synergistic effects of hybridization for greatly enhancing the gas-sensing properties. This review starts with the synthetic techniques, sensing properties, and principles, and then comprehensively compiles the advanced achievements of the pristine 2D LMCs gas sensors. Key advances in the development of the functionalization of 2D LMCs for enhancing gas-sensing properties are categorized according to the spatial architectures. It is systematically discussed in three aspects: surface, lattice, and interlayer, to comprehend the benefits of the functionalized 2D LMCs from surface chemical effect, electronic properties, and structure features. The challenges and outlooks for developing high-performance 2D LMCs-based gas sensors are also proposed.

Metal chalcogenide nanorings for temperature-strain dual-mode sensing

Most metal chalcogenides exhibit layered structures and anisotropic morphologies such as nanosheets, nanoplates, and nanotubes, as well as nanosheet-assembled nanoflowers. Unconventional morphologies such as nanorings may bring appealing properties to functional materials, but they have not been realized with metal chalcogenides. Herein, we report that Sn0.2Mo0.8S2 nanorings with a mixed 1T/2H phase were synthesized by etching SnS2 cores from Sn1-xMoxS2/SnS2 lateral heterostructures. Flexible electronic sensors based on these Sn0.2Mo0.8S2 nanorings exhibited excellent temperature and strain sensing performance, with a negative temperature coefficient of resistance of -0.013 °C-1 and a minimum detectable strain of 0.09%. In addition, the dual-functional flexible electronic sensors with easy fabrication and good wearability showed great promise for tracking human activities and monitoring inapparent health-related signals.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Molecular-Switch-Embedded Solution-Processed Semiconductors

Recent improvements in the performance of solution-processed semiconductor materials and optoelectronic devices have shifted research interest to the diversification/advancement of their functionality. Embedding a molecular switch capable of transition between two or more metastable isomers by light stimuli is one of the most straightforward and widely accepted methods to potentially realize the multifunctionality of optoelectronic devices. A molecular switch embedded in a semiconductor can effectively control various parameters such as trap-level, dielectric constant, electrical resistance, charge mobility, and charge polarity, which can be utilized in photoprogrammable devices including transistors, memory, and diodes. This review classifies the mechanism of each optoelectronic transition driven by molecular switches regardless of the type of semiconductor material or molecular switch or device. In addition, the basic characteristics of molecular switches and the persisting technical/scientific issues corresponding to each mechanism are discussed to help researchers. Finally, interesting yet infrequently reported applications of molecular switches and their mechanisms are also described.

Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications

2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.

Recent advances in heterostructured cathodic electrocatalysts for non-aqueous Li-O2 batteries

Developing efficient energy storage and conversion applications is vital to address fossil energy depletion and global warming. Li-O2 batteries are one of the most promising devices because of their ultra-high energy density. To overcome their practical difficulties including low specific capacities, high overpotentials, limited rate capability and poor cycle stability, an intensive search for highly efficient electrocatalysts has been performed. Recently, it has been reported that heterostructured catalysts exhibit significantly enhanced activities toward the oxygen reduction reaction and oxygen evolution reaction, and their excellent performance is not only related to the catalyst materials themselves but also the special hetero-interfaces. Herein, an overview focused on the electrocatalytic functions of heterostructured catalysts for non-aqueous Li-O2 batteries is presented by summarizing recent research progress. Reduction mechanisms of Li-O2 batteries are first introduced, followed by a detailed discussion on the typical performance enhancement mechanisms of the heterostructured catalysts with different phases and heterointerfaces, and the various heterostructured catalysts applied in Li-O2 batteries are also intensively discussed. Finally, the existing problems and development perspectives on the heterostructure applications are presented.

Ligand-assisted deposition of ultra-small Au nanodots on Fe2O3/reduced graphene oxide for flexible gas sensors

The development of flexible room-temperature gas sensors is important in environmental monitoring and protection. In this contribution, by using 1-octadecanethiol (ODT) as a surface ligand, Au nanodots (NDs) with ultra-small size of ∼1.7 nm were deposited on the surface of α-Fe₂O₃/reduced graphene oxide (rGO). The Au ND-ODT/α-Fe₂O₃/rGO composite was fabricated into flexible gas sensors, which could detect NO₂ gas down to 200 ppb at room temperature. Compared with α-Fe₂O₃/rGO, Au ND-ODT/α-Fe₂O₃/rGO showed enhanced sensing performance because of the beneficial effects of Au NDs, including facilitating the adsorption of NO₂ molecules and forming ohmic-like contact with rGO and α-Fe₂O₃. In addition, the sensing performance of the composite was also influenced by the surface ligands of the Au NDs. Ligands with less polar terminal groups were found to be beneficial to charge transfer in the sensing film. Moreover, Au ND-ODT/α-Fe₂O₃/rGO-based flexible sensors showed negligible performance deterioration under moderately bent conditions, suggesting their potential to be used in portable and wearable devices.

Fabrication Strategies and Optoelectronic Applications of Perovskite Heterostructures

Metal halide perovskites (MHPs) are emerging low‐cost and multifunctional semiconductor materials. They have been widely used in optoelectronic devices such as perovskite solar cells, light‐emitting diodes, photodetectors, memristors, and lasers. Developing new MHPs, defects passivation, optimizing device structures, and packaging techniques are all effective methods to improve photoelectric performance and stability of perovskite devices. Particularly, the fabrication of perovskite/perovskite heterostructures (PPHSs) is a novel and arresting method to obtain stable and high‐performing optoelectronic perovskite devices since it can passivate defects, regulate energy gaps, and provide new carrier transmission modes of MHPs for multiple semiconductor applications. In this paper, representative fabrication strategies of PPHSs including films and single‐crystal heterostructures are reviewed, and their applications in optoelectronic devices are summarized. Furthermore, the challenges and prospects of PPHSs are discussed based on the current status.

Facile assembly of amorphous Fe2O3 nanoparticle@dry graphene oxide composites for lithium-ion storage

The lithium-ion storage capacity of dGO is increased by about 158% after low-temperature am-Fe2O3 modification.

Realization of Oriented and Nanoporous Bismuth Chalcogenide Layers via Topochemical Heteroepitaxy for Flexible Gas Sensors

Most van der Waals two-dimensional (2D) materials without surface dangling bonds show limited surface activities except for their edge sites. Ultrathin Bi₂Se₃, a topological insulator that behaves metal-like under ambient conditions, has been overlooked on its surface activities. Herein, through a topochemical conversion process, ultrathin nanoporous Bi₂Se₃ layers were epitaxially deposited on BiOCl nanosheets with strong electronic coupling, leading to hybrid electronic states with further bandgap narrowing. Such oriented nanoporous Bi₂Se₃ layers possessed largely exposed active edge sites, along with improved surface roughness and film forming ability even on inkjet-printed flexible electrodes. Superior room-temperature NO₂ sensing performance was achieved compared to other 2D materials under bent conditions. Our work demonstrates that creating nanoscale features in 2D materials through topochemical heteroepitaxy is promising to achieve both favorable electronic properties and surface activity toward practical applications.

Preparation Engineering of Two-Dimensional Heterostructures via Bottom-Up Growth for Device Applications

Two-dimensional heterostructures with tremendous electronic and optoelectronic properties hold great promise for nanodevice integrations and applications owing to the wide tunable characteristics. Toward this end, developing construction strategies in allusion to large-scale production of high-quality heterostructures is critical. The mainstream preparation routes are representatively classified into two categories of top-down and bottom-up approaches. Nonetheless, the relatively low reproductivity and the limitation for lateral heterostructure formations of top-down methods at the present stage inherently impeded their further developments. To surmount these obstacles, assembling heterostructures via miscellaneous bottom-up preparation protocols has emerged as a potential solution, attributed to the controllability and clean interface. Three typical approaches of chemical/physical vapor deposition, solution synthesis, and growth under ultrahigh vacuum conditions have shown promise due to the possibilities for preparing heterostructures with predesigned structures, clean interfaces, and the like. Therefore, bottom-up preparation engineering of heterostructures in two dimensions for further device applications is of vital importance. Moreover, heterostructure integrations by these methods have experienced a period of flourishing development in the past few years. In this review, the classical bottom-up growth routes, characterization methods, and latest progress of diverse heterostructures and further device applications are overviewed. Finally, the challenges and opportunities are discussed.

Spatially Controlled Preparation of Layered Metallic-Semiconducting Metal Chalcogenide Heterostructures

Spatially controlled preparation of heterostructures composed of layered materials is important in achieving interesting properties. Although vapor-phased deposition methods can prepare vertical and lateral heterostructures, liquid-phased methods, which can enable scalable production and further solution processes, have shown limited controllability. Herein, we demonstrate by using wet chemical methods that metallic Sn_0.5Mo_0.5S₂ nanosheets can be deposited epitaxially on the edges of semiconducting SnS₂ nanoplates to form SnS₂/Sn_0.5Mo_0.5S₂ lateral heterostructures or coated on both the edges and basal surfaces of SnS₂ to give SnS₂@Sn_0.5Mo_0.5S₂ core@shell heterostructures. They also showed good light-to-heat conversion ability due to the metallic property of Sn_0.5Mo_0.5S₂. In particular, the core@shell heterostructure showed a higher photothermal conversion efficiency than the lateral counterpart, largely due to its randomly oriented and polycrystalline Sn_0.5Mo_0.5S₂ layers with larger interfacing area for multiple internal light scattering.

Heterostructures between a tin-based intermetallic compound and a layered semiconductor for gas sensing

SnS2 nanoplates are used as sacrificial templates to facilitate the in situ growth of intermetallic compound Pt3Sn nanoparticles. The Pt3Sn/SnS2 heterostructures show promise for selective NO2 sensing due to the favored gas adsorption and gas-solid charge transfer on Pt3Sn, combined with the optimized film conductance and formation of ohmic-type Pt3Sn/SnS2 heterointerfaces.

Recent Development of Gas Sensing Platforms Based on 2D Atomic Crystals

Sensors, capable of detecting trace amounts of gas molecules or volatile organic compounds (VOCs), are in great demand for environmental monitoring, food safety, health diagnostics, and national defense. In the era of the Internet of Things (IoT) and big data, the requirements on gas sensors, in addition to sensitivity and selectivity, have been increasingly placed on sensor simplicity, room temperature operation, ease for integration, and flexibility. The key to meet these requirements is the development of high-performance gas sensing materials. Two-dimensional (2D) atomic crystals, emerged after graphene, have demonstrated a number of attractive properties that are beneficial to gas sensing, such as the versatile and tunable electronic/optoelectronic properties of metal chalcogenides (MCs), the rich surface chemistry and good conductivity of MXenes, and the anisotropic structural and electronic properties of black phosphorus (BP). While most gas sensors based on 2D atomic crystals have been incorporated in the setup of a chemiresistor, field-effect transistor (FET), quartz crystal microbalance (QCM), or optical fiber, their working principles that involve gas adsorption, charge transfer, surface reaction, mass loading, and/or change of the refractive index vary from material to material. Understanding the gas-solid interaction and the subsequent signal transduction pathways is essential not only for improving the performance of existing sensing materials but also for searching new and advanced ones. In this review, we aim to provide an overview of the recent development of gas sensors based on various 2D atomic crystals from both the experimental and theoretical investigations. We will particularly focus on the sensing mechanisms and working principles of the related sensors, as well as approaches to enhance their sensing performances. Finally, we summarize the whole article and provide future perspectives for the development of gas sensors with 2D materials.

Metal Halide Perovskite/2D Material Heterostructures: Syntheses and Applications

The past decade has witnessed the great success achieved by metal halide perovskites (MHPs) in photovoltaic and related fields. However, challenges still remain in further improving their performance, as well as, settling the stability issue for future commercialization. Recently, MHP/2D material heterostructures that combining MHPs with the low-cost and solution-processable 2D materials have demonstrated unprecedented improvement in both performance and stability due to the distinctive features at hetero-interface. The diverse fabrication techniques of MHPs and 2D materials allow them to be assembled as heterostructures with different configurations in a variety of ways. Moreover, the large families of MHPs and 2D materials provide the opportunity for the rational design and modification on compositions and functionalities of MHP/2D materials heterostructures. Herein, a comprehensive review of MHP/2D material heterostructures from syntheses to applications is presented. First, various fabrication techniques for MHP/2D material heterostructures are introduced by classifying them into solid-state methods and solution-processed methods. Then the applications of MHP/2D heterostructures in various fields including photodetectors, solar cells, and photocatalysis are summarized in detail. Finally, current challenges for the development of MHP/2D material heterostructures are highlighted, and future opportunities for the advancements in this research field are also provided.

Core@shell and lateral heterostructures composed of SnS and NbS2

The spatial arrangement of heterostructures based on two-dimensional layered materials is important in controlling their electronic and optoelectronic properties. In this contribution, by controlling the reaction kinetics and thus the nucleation and growth sequence of p-type SnS and metallic NbS2, controllable preparation of both SnS@NbS2 core@shell and SnS/NbS2 lateral heterostructures was realized. The SnS@NbS2 core@shell heterostructures were further applied in photodetectors, and interestingly, a negative photoresponse was observed due to the Seebeck effect exerted on the NbS2 shell. Compared with the pure metallic NbS2, the SnS@NbS2 core@shell heterostructures showed a 15 times increased signal-to-noise ratio and much improved photocurrent stability, largely due to the charge and heat transfer between the SnS core and NbS2 shell.

Interface chemistry of two-dimensional heterostructures - fundamentals to applications

Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.

Self-Anti-Stacking 2D Metal Phosphide Loop-Sheet Heterostructures by Edge-Topological Regulation for Highly Efficient Water Oxidation

2D metal phosphide loop-sheet heterostructures are controllably synthesized by edge-topological regulation, where Ni₂ P nanosheets are edge-confined by the N-doped carbon loop, containing ultrafine NiFeP nanocrystals (denoted as NiFeP@NC/Ni₂ P). This loop-sheet feature with lifted-edges prevents the stacking of nanosheets and induces accessible open channels for catalytic site exposure and gas bubble release. Importantly, these NiFeP@NC/Ni₂ P hybrids exhibit a remarkable oxygen evolution activity with an overpotential of 223 mV at 20 mA cm^-2 and a Tafel slope of 46.1 mV dec^-1 , constituting the record-high performance among reported metal phosphide electrocatalysts. The NiFeP@NC/Ni₂ P hybrids are also employed as both anode and cathode to achieve an alkaline electrolyzer for overall water splitting, delivering a current density of 10 mA cm^-2 with a voltage of 1.57 V, comparable to that of the commercial Pt/C||RuO₂ couple (1.56 V). Moreover, a photovoltaic-electrolysis coupling system can as well be effectively established for robust overall water splitting. Evidently, this ingenious protocol would expand the toolbox for designing efficient 2D nanomaterials for practical applications.

Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.

Treatment-dependent surface chemistry and gas sensing behavior of the thinnest member of titanium carbide MXenes

MXenes, a rapidly developing family of two-dimensional materials possessing tunable electronic properties and abundant surface functional groups, are promising gas-sensing materials. Ti₂CT_x, with a thinner unit cell thickness compared to its compositional analogue Ti₃C₂T_x and thus more profound surface-dependent properties, has been less explored over the past years. Herein, by etching the precursor Ti₂AlC with a concentrated HF or LiF/HCl mixture, semiconducting Ti₂CT_x (HF) nanosheets and metallic Ti₂CT_x (LiF/HCl) nanosheets were obtained, respectively, arising from their treatment-dependent surface functionalization. In addition, the resulting metallic nanosheets were partially oxidized into TiO₂/Ti₂CT_x (LiF/HCl) hybrid, which exhibited superior sensitivity toward NH₃ gas as compared with Ti₂CT_x (HF) and Ti₂CT_x (LiF/HCl). Detailed analysis suggests that a high concentration of surface oxygen containing species, such as -O_x, -(OH)_x and Ti-O-Ti, is generally beneficial for NH₃ sensing, and a relatively higher -O_x concentration allows rapid gas desorption and sensor recovery.

Thermal Evaporation of Large-Area SnS2 Thin Films with a UV-to-NIR Photoelectric Response for Flexible Photodetector Applications

In addition to device flexibility, the retentivity performance of photoelectric materials after an extreme reverse-bending process is intrinsically important and desirable for next-generation advanced flexible optoelectronics. In this work, we designed and fabricated large-area flexible SnS₂ thin films with a novel nanosheet/amorphous blended structure to achieve an outstanding flexible photoelectric performance via a facile evaporation and post-thermal annealing route. Crystal structure analysis showed that the obtained SnS₂ thin films were constructed with nanosheets oriented parallel to the substrate which were surrounded and connected by the amorphous component with a smooth surface. This nanosheet/amorphous blended structure allowed extreme bending because of the adhesive and strain-accommodation effect that arises from the amorphous components. The assembled SnS₂ flexible photodetectors can bear a small bending radius as low as 1 mm for over 3000 bending-flatting cycles without a drastic performance decay. In particular, over 90% of the initial photoelectric responsivity (40.8 mA/W) was maintained even after 1000 bending-flatting cycles. Moreover, the SnS₂ thin film can convert photons to photocurrent over a wide spectral range from ultraviolet to near infrared. These unique characteristics indicate that the strategy used in this work is attractive for the development of future wearable photoelectric and artificial intelligence applications.

Solution-Processed p-SnSe/n-SnSe2 Hetero-Structure Layers for Ultrasensitive NO2 Detection

The formation of semiconductor heterostructures is an effective approach to achieve high performance in electrical gas sensing. However, such heterostructures are usually prepared via multi-step procedures. In this contribution, by taking advantage of the crystal phase-dependent electronic property of SnSe_x based materials, we report a one-step colloid method for the preparation of SnSe(x%)/SnSe₂ (100-x%) p-n heterostructures, with x ≈30, 50, and 70. The obtained materials with solution processability were successfully fabricated into NO₂ sensors. Among them, the SnSe(50 %)/SnSe₂ (50 %) based sensor with an active layer thickness of 2 μm exhibited the highest sensitivity to NO₂ (30 % at 0.1 ppm) with a limit of detection (LOD) down to 69 ppb at room temperature (25 °C). This was mainly attributed to the formation of p-n junctions that allowed for gas-induced modification of the junction barriers. Under 405 nm laser illumination, the sensor performance was further enhanced, exhibiting a 3.5 times increased response toward 0.1 ppm NO₂ , along with a recovery time of 4.6 min.

Printed gas sensors

This review presents the recent development of printed gas sensors based on functional inks.

Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS2

2D layers of metal dichalcogenides are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. 2D SnS₂ nanosheets with a bandgap of ≈2.6 eV have been attracting intensive attention as one potential candidate for modern electrocatalysis, electronic, and/or optoelectronic fields. However, the controllable growth of large-size and high-quality SnS₂ atomic layers still remains a challenge. Herein, a salt-assisted chemical vapor deposition method is provided to synthesize atomic-layer SnS₂ with a large crystal size up to 410 µm and good uniformity. Particularly, the as-fabricated SnS₂ nanosheet-based field-effect transistors (FETs) show high mobility (2.58 cm² V^-1 s^-1 ) and high on/off ratio (≈10⁸ ), which is superior to other reported SnS₂ -based FETs. Additionally, the effects of temperature on the electrical properties are systematically investigated. It is shown that the scattering mechanism transforms from charged impurities scattering to electron-phonon scattering with the temperature. Moreover, SnS₂ can serve as an ideal material for energy storage and catalyst support. The high performance together with controllable growth of SnS₂ endow it with great potential for future applications in electrocatalysis, electronics, and optoelectronics.

Wet-Chemical Synthesis and Applications of Semiconductor Nanomaterial-Based Epitaxial Heterostructures

Semiconductor nanomaterial-based epitaxial heterostructures with precisely controlled compositions and morphologies are of great importance for various applications in optoelectronics, thermoelectrics, and catalysis. Until now, various kinds of epitaxial heterostructures have been constructed. In this minireview, we will first introduce the synthesis of semiconductor nanomaterial-based epitaxial heterostructures by wet-chemical methods. Various architectures based on different kinds of seeds or templates are illustrated, and their growth mechanisms are discussed in detail. Then, the applications of epitaxial heterostructures in optoelectronics, catalysis, and thermoelectrics are described. Finally, we provide some challenges and personal perspectives for the future research directions of semiconductor nanomaterial-based epitaxial heterostructures.

Direct Synthesis of a Self-Assembled WSe2 /MoS2 Heterostructure Array and its Optoelectrical Properties

Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe₂ /MoS₂ heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe₂ wires are selectively stacked over the MoS₂ wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe₂ /MoS₂ -based p-n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W^-1 and response speed of 16 µs. As a feasible application, a WSe₂ /MoS₂ -based photodiode array (10 × 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications.

Shape-Engineered Synthesis of Atomically Thin 1T-SnS2 Catalyzed by Potassium Halides

Shape engineering plays a crucial role in the application of two-dimensional (2D) layered metal dichalcogenide (LMD) crystalline materials in terms of physical and chemical property modulation. However, controllable growth of 1T phase tin disulfide (SnS₂) with multifarious morphologies has rarely been reported and remains challenging. Herein, we report a direct synthesis of large-size, uniform, and atomically thin 1T-SnS₂ with multiple morphologies by adding potassium halides via a facile chemical vapor deposition process. A variety of morphologies, i.e., from hexagon, triangle, windmill, and dendritic to coralloid, corresponding to fractal dimensions from 1.01 to 1.81 are accurately controlled by growth conditions. Moreover, the Sn concentration controls the morphology change of SnS₂. The edge length of the SnS₂ dendritic flake can grow larger than 500 μm in 5 min. Potassium halides can significantly reduce the surface migration barrier of the SnS₂ cluster and enhance the SnS₂ adhesion force with substrate to facilitate efficient high in-plane growth of monolayer SnS₂ compared to sodium halides by density functional theory calculations. More branched SnS₂ with higher fractal dimension provides more active sites for enhancing hydrogen evolution reactions. Importantly, we prove that potassium halides are preferable for 1T-phase LMDs structures, while sodium halides are more suitable for 2H-phase materials. The growth mechanism proposed here provides a general approach for controllable-phase synthesis of 2D LMD crystals and related heterostructures. Shape engineering of 2D materials also provides a strategy to tune LMD properties for demanding applications.

Unveiling the structural evolution of 1T SnS2 anode upon lithiation/delithiation by TEM

Pure 1T SnS₂ was synthesized by the hydrothermal method and its atomic image was obtained. The Li-storage performance and its structure evolution were revealed by ex situ TEM.