Transparent multispectral photodetectors mimicking the human visual system

In-Sublattice Carrier Transition Enabled Polarimetric Photodetectors with Reconfigurable Polarity Transition

Miniaturized polarimetric photodetectors based on anisotropic two-dimensional materials attract potential applications in ultra-compact polarimeters. However, these photodetectors are hindered by the small polarization ratio values and complicated artificial structures. Here, a novel polarization photodetector based on in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, with a giant and reconfigurable PR value, is demonstrated. The unique periodic sublattice structure of CdSb2Se3Br2 features an in-sublattice carrier transition preferred along Sb2Se3 chains. Leveraging on the in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, gate voltage has an anisotropic modulation effect on the band alignment of heterostructure along sublattice. Consequently, the heterostructure exhibits a polarization-tunable photo-induced threshold voltage shift, which provides reconfigurable PR values from positive (unipolar regime) to negative (bipolar regime), covering all possible numbers (1→+∞/-∞→-1). Using this anisotropic photovoltaic effect, gate-tunable polarimetric imaging is successfully implemented. This work provides a new platform for developing next-generation highly polarimetric optoelectronics.

Centrifugal Inertia-Induced Directional Alignment of AgNW Network for Preparing Transparent Electromagnetic Interference Shielding Films with Joule Heating Ability

Transparent electromagnetic interference (EMI) shielding is highly desired in specific visual scenes, but the challenge remains in balancing their EMI shielding effectiveness (SE) and optical transmittance. Herein, this study proposed a directionally aligned silver nanowire (AgNW) network construction strategy to address the requirement of high EMI SE and satisfactory light transmittance using a rotation spraying technique. The orientation distribution of AgNW is induced by centrifugal inertia force generated by a high-speed rotating roller, which overcomes the issue of high contact resistance in random networks and achieves high conductivity even at low AgNW network density. Thus, the obtained transparent conductive film achieved a high light transmittance of 72.9% combined with a low sheet resistance of 4.5 Ω sq-1 and a desirable EMI SE value of 35.2 dB at X band, 38.9 dB in the K-band, with the highest SE of 43.4 dB at 20.4 GHz. Simultaneously, the excellent conductivity endowed the film with outstanding Joule heating performance and defogging/deicing ability, ensuring the visual transparency of windows when shielding electromagnetic waves. Hence, this research presents a highly effective strategy for constructing an aligned AgNW network, offering a promising solution for enhancing the performance of optical-electronic devices.

Temperature-Dependent Excitonic Light Manipulation with Atomically Thin Optical Elements

Monolayer 2D semiconductors, such as WS2, exhibit uniquely strong light-matter interactions due to exciton resonances that enable atomically thin optical elements. Similar to geometry-dependent plasmon and Mie resonances, these intrinsic material resonances offer coherent and tunable light scattering. Thus far, the impact of the excitons' temporal dynamics on the performance of such excitonic metasurfaces remains unexplored. Here, we show how the excitonic decay rates dictate the focusing efficiency of an atomically thin lens carved directly out of exfoliated monolayer WS2. By isolating the coherent exciton radiation from the incoherent background in the focus of the lens, we obtain a direct measure of the role of exciton radiation in wavefront shaping. Furthermore, we investigate the influence of exciton-phonon scattering by characterizing the focusing efficiency as a function of temperature, demonstrating an increased optical efficiency at cryogenic temperatures. Our results provide valuable insights into the role of excitonic light scattering in 2D nanophotonic devices.

Patterned growth of AgBiS2 nanostructures on arbitrary substrates for broadband and eco-friendly optoelectronic sensing

The patterning of functional nanomaterials shows a promising path in the advanced fabrication of electronic and optoelectronic devices. Current micropatterning strategies are indispensable for post-etching/liftoff processes that contaminate/damage functional materials. Herein, we developed an innovative, low-temperature, post-liftoff-free, seed-confined fabricating strategy that can tackle this issue, thus achieving designated patterns of flower-shaped AgBiS2 nanostructures at either micro- or macro-scale on arbitrary substrates that are either rigid or flexible. Made of patterned AgBiS2 nanostructures, the photoconductor shows broadband (320 nm-2200 nm), sensitive (Rpeak = 1.56 A W-1), and fast (less than 100 μs) photoresponses. Furthermore, single-pixel raster-scanning and 28 × 12 focal plane array imaging were performed to demonstrate reliable and resolved electrical responses to optical patterns, showcasing the potential of the photoconductor in practical imaging applications. Notably, the patterning process enables strain-releasing micro-structures, which lead to the fabrication of a flexible photodetector with high durability upon over 1000 bending/recovering testing cycles. This study provides a simple, low-temperature, and eco-friendly strategy to address the current challenges in non-aggressive micro-fabrication and arbitrary patterning of semiconductors, which are promising to meet the development of further emerging technologies in scalable and wearable optoelectronic sensors.

Nonlocal, Flat-Band Meta-Optics for Monolithic, High-Efficiency, Compact Photodetectors

Miniaturized photodetectors are becoming increasingly sought-after components for next-generation technologies, such as autonomous vehicles, integrated wearable devices, or gadgets embedded on the Internet of Things. A major challenge, however, lies in shrinking the device footprint while maintaining high efficiency. This conundrum can be solved by realizing a nontrivial relation between the energy and momentum of photons, such as dispersion-free devices, known as flat bands. Here, we leverage flat-band meta-optics to simultaneously achieve critical absorption over a wide range of incidence angles. For a monolithic silicon meta-optical photodiode, we achieved an ∼10-fold enhancement in the photon-to-electron conversion efficiency. Such enhancement over a large angular range of ∼36° allows incoming light to be collected via a large-aperture lens and focused on a compact photodiode, potentially enabling high-speed and low-light operation. Our research unveils new possibilities for creating compact and efficient optoelectronic devices with far-reaching impact on various applications, including augmented reality and light detection and ranging.

Vertically Stacked Transparent Organic Photodetectors for Light Intensity-Independent Wavelength Recognition

Wavelength recognition is one of the important functions of photodetectors. However, wavelength recognition of the reported photodetectors generally depends on light intensity, which limits the practical applications. Here, a light intensity-independent wavelength recognition scheme based on vertically stacked transparent photodetectors is reported. By analyzing light intensity attenuation behavior in the multiple stacked photodetectors, the wavelength of incident light can be accurately determined. Due to the high transparency of the detectors, the multiple stacked detectors allow incident light to pass through. Meanwhile, since the attenuation coefficients at different wavelengths are attributed to the detector's absorption characteristics, the intensity of incident light and its wavelength can be determined by analyzing the attenuation coefficients measured through each stacked detector. Consistent wavelength values obtained at different light intensities verify the light intensity-independence of the multistacked detector system.

MXene based flexible photodetectors: progress, challenges, and opportunities

The growing interest in applying 2D transition-metal carbides and nitrides (MXenes) to diverse application fields such as energy storage and harvesters, catalysts, sensors, optoelectronics, electromagnetic interference shielding and antennas since its first discovery in 2011 is clearly evident. Their intrinsic high conductivity limits the development of MXenes in photodetectors that rely on the semiconducting properties of active materials, while the abundant functional groups on the surface of MXenes provide opportunities for using MXenes as sensing materials in the fabrication of flexible photodetectors. Considerable studies on MXene based photodetectors have been carried out, but the main obstacles include seeking novel semiconducting materials in MXene families, the manufacturing technology, etc. This review highlights the progress, challenges and opportunities in MXene based flexible photodetectors and discusses novel materials, architectures, and approaches that capitalize on our growing understanding of MXenes.

Localised surface plasmon resonance inducing cooperative Jahn-Teller effect for crystal phase-change in a nanocrystal

The Jahn-Teller effect, a phase transition phenomenon involving the spontaneous breakdown of symmetry in molecules and crystals, causes important physical and chemical changes that affect various fields of science. In this study, we discovered that localised surface plasmon resonance (LSPR) induced the cooperative Jahn-Teller effect in covellite CuS nanocrystals (NCs), causing metastable displacive ion movements. Electron diffraction measurements under photo illumination, ultrafast time-resolved electron diffraction analyses, and theoretical calculations of semiconductive plasmonic CuS NCs showed that metastable displacive ion movements due to the LSPR-induced cooperative Jahn-Teller effect delayed the relaxation of LSPR in the microsecond region. Furthermore, the displacive ion movements caused photo-switching of the conductivity in CuS NC films at room temperature (22 °C), such as in transparent variable resistance infrared sensors. This study pushes the limits of plasmonics from tentative control of collective oscillation to metastable crystal structure manipulation.

Improving Photosensitivity and Transparency in Organic Phototransistor with Blending Insulating Polymers

Organic phototransistors exhibit great promise for use in a wide range of technological applications due to their flexibility, low cost, and low-temperature processability. However, their low transparency due to visible light absorption has hindered their adoption in next-generation transparent electronics. For this reason, the present study sought to develop a highly sensitive organic phototransistor with greater transparency and significantly higher light sensitivity in the visible and UVA regions without deterioration in its electrical properties. An organic blended thin-film transistor (TFT) fabricated from the blend of an organic semiconductor and an insulating polymer demonstrated improved electrical properties in the dark and a higher current under light irradiation even though its transmittance was higher. The device exhibited a transmittance of 87.28% and a photosensitivity of 7049.96 in the visible light region that were 4.37% and 980 times higher than those of the single-semiconductor-based device. The carrier mobility of the device blended with the insulating polymer was improved and greatly amplified under light irradiation. It is believed that the insulating polymer facilitated the crystallization of the organic semiconductor, thus promoting the flow of photogenerated excitons and improving the photocurrent. Overall, the proposed TFT offers excellent low-temperature processability and has the potential to be employed in a range of transparent electronic applications.

Low symmetric sub-wavelength array enhanced lensless polarization-sensitivity photodetector of germanium selenium

Polarization-sensitive photodetectors, with the ability of identifying the texture-, stress-, and roughness-induced light polarization state variation, displace unique advantages in the fields of national security, medical diagnosis, and aerospace. The utilization of in-plane anisotropic two-dimensional (2D) materials has led the polarization photodetector into a polarizer-free regime, and facilitated the miniaturization of optoelectronic device integration. However, the insufficient polarization ratio (usually less than 10) restricts the detection resolution of polarized signals. Here, we designed a sub-wavelength array (SWA) structure of 2D germanium selenium (GeSe) to further improve its anisotropic sensitivity, which boosts the polarized photocurrent ratio from 1.6 to 18. This enhancement comes from the combination of nano-scale arrays with atomic-scale lattice arrangement at the low-symmetric direction, while the polarization-sensitive photoresponse along the high-symmetric direction is strongly suppressed due to the SWA-caused depolarization effect. Our mechanism study revealed that the SWA can improve the asymmetry of charge distribution, attenuate the matrix element in zigzag direction, and the localized surface plasma, which elevates the photo absorption and photoelectric transition probability along the armchair direction, therefore accounts for the enhanced polarization sensitivity. In addition, the photodetector based on GeSe SWA exhibited a broad power range of 40 dB at a near-infrared wavelength of 808 nm and the ability of weak-light detection under 0.1 LUX of white light (two orders of magnitude smaller than pristine 2D GeSe). This work provides a feasible guideline to improve the polarization sensitivity of 2D materials, and will greatly benefit the development of polarized imaging sensors.

Multispectral and Circular Polarization-Sensitive Carbon Dot-Polydiacetylene Capacitive Photodetector

Multispectral photodetectors (MSPs) and circularly polarized light (CPL) sensors are important in opto-electronics, photonics, and imaging. A capacitive photodetector consisting of an interdigitated electrode coated with carbon dot/anthraquinone-polydiacetylene is constructed. Photoexcitation of the carbon dots induces transient electron transfer to the anthraquinone moieties, and concomitant change in the film dielectric constant and recorded capacitance. This unique photodetection mechanism furnishes wavelength selectivity that is solely determined by the absorbance of the carbon dots incorporated in the anthraquinone-polydiacetylene matrix. Accordingly, employing an array of polymerized-anthraquinone photodetector films comprising carbon dots (C-dots) exhibiting different excitation wavelengths yielded optical "capacitive fingerprints" in a broad spectral range (350-650 nm). Furthermore, circular light polarization selectivity is achieved through chiral polymerization of the polydiacetylene framework. The carbon dot/anthraquinone-polydiacetylene capacitive photodetector features rapid photo-response, high fidelity, and recyclability as the redox reactions of anthraquinone are fully reversible. The carbon dot/anthraquinone-polydiacetylene platform is inexpensive, easy to fabricate, and consists of environmentally friendly materials.

Miniaturizing color-sensitive photodetectors via hybrid nanoantennas toward submicrometer dimensions

Digital camera sensors use color filters on photodiodes to achieve color selectivity. As the color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the minimum pixel size. Here, we report hybrid silicon-aluminum nanostructures in the extreme limit of zero distance between color filters and sensors. This design could essentially achieve submicrometer pixel dimensions and minimize the optical cross-talk arising from tilt illuminations. The designed hybrid silicon-aluminum nanostructure has dual functionalities. Crucially, it supports a hybrid Mie-plasmon resonance of magnetic dipole to achieve color-selective light absorption, generating electron hole pairs. Simultaneously, the silicon-aluminum interface forms a Schottky barrier for charge separation and photodetection. This design potentially replaces the traditional dye-based filters for camera sensors at ultrahigh pixel densities with advanced functionalities in sensing polarization and directionality, and UV selectivity via interband plasmons of silicon.

Highly stable semitransparent multilayer graphene/LaVO3vertical-heterostructure photodetectors

A heterostructure composed of a combination of semi-metallic graphene (Gr) and high-absorption LaVO₃is ideal for high-performance translucent photodetector (PD) applications. Here, we present multilayer Gr/LaVO₃vertical-heterostructure semitransparent PDs with various layer numbers (L_n). AtL_n= 2, the PD shows the best performance with a responsivity (R) of 0.094 A W^-1and a specific detectivity (D*) of 7.385 × 10⁷cm Hz^1/2W^-1at 532 nm. Additionally, the average visible transmittance of the PD is 63%, i.e. it is semitransparent. We increased photocurrent (PC) by approximately 13%, from 0.564 to 0.635μA cm^-2by using an Al reflector on the semitransparent PD. The PC of an unencapsulated PD maintains about 86% (from 0.571 to 0.493μA cm^-2) of its initial PC value after 2000 h at 25 °C temperature/30% relative humidity, showing good stability. This behavior is superior to that of previously reported graphene-based PDs. These results show that these PDs have great potential for semitransparent optoelectronic applications.

Coupled Multiphysics Modelling of Sensors for Chemical, Biomedical, and Environmental Applications with Focus on Smart Materials and Low-Dimensional Nanostructures

Low-dimensional nanostructures have many advantages when used in sensors compared to the traditional bulk materials, in particular in their sensitivity and specificity. In such nanostructures, the motion of carriers can be confined from one, two, or all three spatial dimensions, leading to their unique properties. New advancements in nanosensors, based on low-dimensional nanostructures, permit their functioning at scales comparable with biological processes and natural systems, allowing their efficient functionalization with chemical and biological molecules. In this article, we provide details of such sensors, focusing on their several important classes, as well as the issues of their designs based on mathematical and computational models covering a range of scales. Such multiscale models require state-of-the-art techniques for their solutions, and we provide an overview of the associated numerical methodologies and approaches in this context. We emphasize the importance of accounting for coupling between different physical fields such as thermal, electromechanical, and magnetic, as well as of additional nonlinear and nonlocal effects which can be salient features of new applications and sensor designs. Our special attention is given to nanowires and nanotubes which are well suited for nanosensor designs and applications, being able to carry a double functionality, as transducers and the media to transmit the signal. One of the key properties of these nanostructures is an enhancement in sensitivity resulting from their high surface-to-volume ratio, which leads to their geometry-dependant properties. This dependency requires careful consideration at the modelling stage, and we provide further details on this issue. Another important class of sensors analyzed here is pertinent to sensor and actuator technologies based on smart materials. The modelling of such materials in their dynamics-enabled applications represents a significant challenge as we have to deal with strongly nonlinear coupled problems, accounting for dynamic interactions between different physical fields and microstructure evolution. Among other classes, important in novel sensor applications, we have given our special attention to heterostructures and nucleic acid based nanostructures. In terms of the application areas, we have focused on chemical and biomedical fields, as well as on green energy and environmentally-friendly technologies where the efficient designs and opportune deployments of sensors are both urgent and compelling.

Ferro-Pyro-Phototronic Effect in Monocrystalline 2D Ferroelectric Perovskite for High-Sensitive, Self-Powered, and Stable Ultraviolet Photodetector

2D hybrid perovskite ferroelectrics have drawn great attention in the field of photodetection, because the spontaneous polarization-induced built-in electric field can separate electron-hole pairs, and makes self-powered photodetection possible. However, most of the 2D hybrid perovskite-based photodetectors focused on the detection of visible light, and only a few reports realized the self-powered and sensitive ultraviolet (UV) detection using wide bandgap hybrid perovskites. Here, 2D ferroelectric PMA₂PbCl₄ monocrystalline microbelt (MMB)-based PDs are demonstrated. By using the ferro-pyro-phototronic effect, the self-powered Ag/Bi/2D PMA₂PbCl₄ MMB/Bi/Ag PDs show a high photoresponsivity up to 9 A/W under 320 nm laser illumination, which is much higher than those of previously reported self-powered UV PDs. Compared with responsivity induced by the photovoltaic effect, the responsivity induced by the ferro-pyro-phototronic effect is 128 times larger. The self-powered PD also shows fast response and recovery speed, with the rise time and fall time of 162 and 226 μs, respectively. More importantly, the 2D PMA₂PbCl₄ MMB-based PDs with Bi/Ag electrode exhibit significant stability when subjected to high humidity, continuous laser illumination, and thermal conditions. Our findings would shed light on the ferro-pyro-phototronic-effect-based devices, and provide a good method for high-performance UV detection.

Flexible broadband white light multimode interference coupler

In recent years, with the development of micro broadband white light sources, micro white light devices have exhibited great potential application value in many fields. As the core component of broadband white light technology, the compact, efficient and flexible RGB coupler plays a vital role. However, the traditional RGB coupler is composed of discrete components. Realizing miniaturization, flexibility and high transmission efficiency of the device is difficult, which greatly limits the development of micro white light broadband devices. In this paper, we propose an RGB on-chip waveguide coupler that can meet the requirements of miniaturization, flexibility, and high transmission efficiency and study its performance. The research results show that the device size is reduced to 0.04 mm×3.6 mm, and the average transmission efficiency in RGB beam multiplexing/demultiplexing is as high as 94.6%. In addition, the use of the SU8 polymer as a waveguide material makes our design compatible with flexible optoelectronic technology, which will greatly promote the development of miniaturization and flexibility for micro white light devices in the future.

Single-Crystalline Silicon Frameworks: A New Platform for Transparent Flexible Optoelectronics

Single-crystalline silicon (sc-Si) is the dominant semiconductor material for the modern electronics industry. Despite their excellent photoelectric and electronic properties, the rigidity, brittleness, and nontransparency of commonly used silicon wafers limit their application in transparent flexible optoelectronics. In this study, a new type of Si microstructure, named single-crystalline Si frameworks (sc-SiFs), is developed, through a combination of wet-etching and microfabrication technologies. The sc-SiFs are self-supported, flexible, lightweight, tailorable, and highly transparent. They can withstand a small bending radius of less than 0.5 mm and have a transparency of up to 96% in all wavelength ranges, owing to the hollowed-out framework structures. Thus, the sc-SiFs provide a new platform for high-performance transparent flexible optoelectronics. Taking transparent flexible photodetectors (TFPDs) as an example, substrate-free and self-driven TFPDs are achieved based on the sc-SiFs. The devices exhibit superior performance compared to other reported TFPDs and reveal the great potential for integrated optoelectronic applications. The development of sc-SiFs paves the way toward the fabrication of high-performance transparent flexible devices for a host of applications, including e-skins, the Internet of Things, transparent flexible displays, and artificial visual cortexes.

Low-Dimensional Metal Halide Perovskite Photodetectors

Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.

Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest in modulating the optoelectronic features to realize high-performance photodetectors. However, for most phototransistors, the photoresponse characteristics are modulated with an electrical gate or a static field. In this paper, we demonstrate a graphene/C60/pentacene vertical phototransistor to tune both the photoresponse time and photocurrent based on light modulation. By exploiting the power-dependent multiple states of the photocurrent, remarkable logical photocurrent switching under infrared light modulation occurs in a thick C60 layer (11 nm) device, which implies competition of the photogenerated carriers between graphene/C60 and C60/pentacene. Meanwhile, we observe a complete positive-negative alternating process under continuous 405 nm irradiation. Furthermore, infrared light modulation of a thin C60 (5 nm) device results in a photoresponsivity improvement from 3425 A/W up to 7673 A/W, and we clearly probe the primary reason for the distinct modulation results between the 5 and 11 nm C60 devices. In addition, the tuneable bandwidth of the infrared response from 10 to 3 × 103 Hz under visible light modulation is explored. Such distinct types of optical modulation phenomena and logical photocurrent inversion characteristics pave the way for future tuneable logical photocurrent switching devices and high-performance phototransistors with vertical graphene heterojunction structures.

Dynamic Focusing with High-Quality-Factor Metalenses

Metasurface lenses provide an ultrathin platform in which to focus light, but weak light-matter interactions limit their dynamic tunability. Here we design submicron-thick, ultrahigh quality factor (high-Q) metalenses that enable dynamic modulation of the focal length and intensity. Using full-field simulations, we show that quality factors exceeding 5000 can be generated by including subtle, periodic perturbations within the constituent Si nanoantennas. Such high-Q resonances enable lens modulation based on the nonlinear Kerr effect, with focal lengths varying from 4 to 6.5 μm and focal intensities decreasing by half as input intensity increases from 0.1 to 1 mW/μm². We also show how multiple high-Q resonances can be embedded in the lens response through judicious placement of the perturbations. Our high-Q lens design, with quality factors 2 orders of magnitude higher than existing lens designs, provides a foundation for reconfigurable, multiplexed, and hyperspectral metasurface imaging platforms.

Broadband perovskite quantum dot spectrometer beyond human visual resolution

The quantum dot spectrometer, fabricated by integrating different quantum dots with an image sensor to reconstruct the target spectrum from spectral-coupled measurements, is an emerging and promising hyperspectrometry technology with high resolution and a compact size. The spectral resolution and spectral range of quantum dot spectrometers have been limited by the spectral variety of the available quantum dots and the robustness of algorithmic reconstruction. Moreover, the spectrometer integration of quantum dots also suffers from inherent photoluminescence emission and poor batch-to-batch repeatability. In this work, we developed nonemissive in situ fabricated MA3Bi2X9 and Cs2SnX6 (MA = CH3NH3; X = Cl, Br, I) perovskite-quantum-dot-embedded films (PQDFs) with precisely tunable transmittance spectra for quantum dot spectrometer applications. The resulting PQDFs contain in situ fabricated perovskite nanocrystals with homogenous dispersion in a polymeric matrix, giving them advantageous features such as high transmittance efficiency and good batch-to-batch repeatability. By integrating a filter array of 361 kinds of PQDFs with a silicon-based photodetector array, we successfully demonstrated the construction of a perovskite quantum dot spectrometer combined with a compressive-sensing-based total-variation optimization algorithm. A spectral resolution of ~1.6 nm was achieved in the broadband of 250-1000 nm. The performance of the perovskite quantum dot spectrometer is well beyond that of human eyes in terms of both the spectral range and spectral resolution. This advancement will not only pave the way for using quantum dot spectrometers for practical applications but also significantly impact the development of artificial intelligence products, clinical treatment equipment, scientific instruments, etc.