Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect

Quantifying the pyroelectric and photovoltaic coupling series of ferroelectric films

The coupling of photovoltaic and pyroelectric effects is a common phenomenon in ferroelectric films and often results in coupling enhancements. Although the coupling effects of a variety of ferroelectric films have been examined in terms of improved performance, they have yet to be quantitatively ranked and assessed. Here, by taking the charge coupling factor, the Yang's charge, and output energy as metrics to evaluate the coupling performance, a methodology is developed for evaluating the performance of a range ferroelectric films when the pyroelectric and photovoltaic effects are coupled. By experimentally measuring and quantitatively ranking the evaluation metrics, the influence of coupling effects on the output charge and the energy harvesting capabilities of various ferroelectric films can be readily visualized. In addition, the analysis of the underlying reasons for the coupling enhancement enables optimization of the methods to quantify the charge coupling factor. This work provides a unique reference for the selection of materials, optimization of performance, and energy harvesting for coupled ferroelectric film-based generators.

Enhanced Bulk Photovoltaic Effect of Single-Domain Freestanding BiFeO3 Membranes

The bulk photovoltaic effect (BPVE), which uniquely exists in non-centrosymmetric materials, has been received extensive attention recently due to its potential to overcome the theoretical Shockley-Queisser limit in traditional p-n junction solar cells. Here, freestanding single-domain BiFeO3 membranes are exfoliated from miscut SrTiO3 substrates by dissolving Sr3Al2O6 sacrificial layers, and transferred on SiO2/Si substrates. This study finds that the freestanding BiFeO3 membranes maintain the single-domain structure and exhibits the significantly enhanced bulk photovoltaic response (≈200% enhancement), compared to the strained BiFeO3 films. The comprehensive atomic imaging analyses manifest that the freestanding BiFeO3 membrane demonstrates the bigger noncentral ion (Fe) displacement, which results in the larger in-plane ferroelectric polarization and substantial increase in the BPVE photocurrent. This work not only provides an effective approach to enhance the BPVE of ferroelectric oxide films, but also can potentially promote the exploration of BPVE of oxide membranes integrated with silicon-based or 2D electronics.

Self-Poled Bismuth Ferrite Thin Film Micromachined for Piezoelectric Ultrasound Transducers

Piezoelectric micromachined ultrasound transducers (pMUTs), especially those using lead-free materials, are crucial next-generation microdevices for precise actuation and sensing, driving advancements in medical, industrial, and environmental applications. Bismuth ferrite (BiFeO3) is emerging as a promising lead-free piezoelectric material to replace Pb(Zr,Ti)O3 in pMUTs. Despite its potential, the integration of BiFeO3 thin films into pMUTs has been hindered by poling issues. Here, a BiFeO3 heterostructure compositionally downgraded with Gd doping is developed to introduce compressive strain, resulting in strong self-poling. Utilizing a large-area self-poled thin film over an entire 6-inch wafer, a pMUT with a 6 × 6 array at the device level is designed and evaluated. At a resonant frequency of 21 kHz, the dynamic vibration displacement can reach 24.0 nm. At 500 Hz, far below the resonant frequency of 21 kHz, the pMUT also displays sensitive converse piezoelectric response, even at a high temperature of 200 °C. This work represents a significant breakthrough in lead-free BiFeO3 thin film for practical sensing applications, paving the way for the transformation of macro-transducers into next-generation functional microdevices.

Transfer of High-Temperature-Sputtered BiFeO3 Thin Films onto Flexible Substrates Using α-MoO3 Layers

Inducing external strains on highly oriented thin films transferred onto mechanically deformable substrates enables a drastic enhancement of their ferroelectric, magnetic, and electronic performances, which cannot be achieved in films on rigid single crystals. Herein, the growth and diffusion behaviors of BiFeO3 thin films grown at various temperatures is reported on α-MoO3 layers of different thicknesses using sputtering. When the BiFeO3 thin films are deposited at a high temperature, significant diffusion of Fe into α-MoO3 occurs, producing the Fe1.89Mo4.11O7 phase and suppressing the maintenance of the 2D structure of the α-MoO3 layers. Although lowering the deposition temperature alleviates the diffusion yielding the survival of the α-MoO3 layer, enabling exfoliation, the BiFeO3 is amorphous and the formation of the Fe1.89Mo4.11O7 phase cannot be suppressed at the crystallization temperature. High-temperature-grown BiFeO3 thin films are successfully transferred onto flexible substrates via mechanical exfoliation by introducing a blocking layer of Au and measured the ferroelectric properties of the transferred films.

Ferroelectric, flexoelectric and photothermal coupling in PVDF-based composites for flexible photoelectric sensors

A ferroelectric polyvinylidene fluoride (PVDF) film with excellent flexibility possesses great potential for photodetection and wearable devices. However, the relatively weak photo-absorption and the consequent small photocurrent limit its photofunctional properties. Herein, we embedded a strongly visible-light active material system, 0.5Ba(Zr0.08Ti0.8Mn0.12)O3-0.5(Ba0.7Ca0.3)TiO3 (BZTM-BCT) loaded with Ag and Au nanoparticles, into a PVDF film, which demonstrates a significantly higher photovoltaic response in the whole visible light range with a β-phase content of over 90%. In a state of "bending + poling", the PVDF/BZTM-BCT:Au film presents an optimal response for photoelectric properties by exhibiting a photocurrent that is 57 times higher than that of a pure PVDF film when illuminated with 405 nm LED light at 100 mW cm-2. Photoexcitation and thermal excitation jointly contribute to the generation of free carriers, while the flexoelectric and ferroelectric coupling electric field provides a greater driving force for carrier separation and transport. More interestingly, composite film-based photoelectric sensors can simultaneously respond to light and the movement and deformation of contacted things, indicating its potential in versatile applications. Overall, this work puts forward a new route for designing new flexible multifunctional photoelectric devices.

Ferroelectric BaTiO3 Freestanding Sheets for an Ultra-High-Speed Light-Driven Actuator

Light-driven actuators convert optical energy into physical motion. Organic materials, commonly used in light-driven actuators thus far, suffer from two limitations: slow repetitive operation and the requirement of two different light sources. Herein, we report a high-speed, light-driven actuator that can be operated by a single light source with low-energy density. We achieved this breakthrough by utilizing a freestanding epitaxial sheet of ferroelectric BaTiO3. One repetitive operation takes only 120 μs, which is 104 times faster than that of organic-based counterparts. The high-speed operation is derived from the light-induced nonthermal deformation provided by the excellent ferroelectricity (remnant polarization of 23 μC/cm2) and piezoelectricity (d33 of 600 pm/V) of the sheet. The displacement-to-length ratio is achieved to be 3.7% with a relatively low laser power density (10-200 mW/cm2) compared to previously reports (150-109 mW/cm2). Furthermore, the actuator was operable even in water, demonstrating its potential in various applications.

Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic

Multiferroic materials have been intensively pursued to achieve the mutual control of electric and magnetic properties. The breakthrough progress in 2D magnets and ferroelectrics encourages the exploration of low-dimensional multiferroics, which holds the promise of understanding inscrutable magnetoelectric coupling and inventing advanced spintronic devices. However, confirming ferroelectricity with optical techniques is challenging in 2D materials, particularly in conjunction with antiferromagnetic orders in single- and few-layer multiferroics. Here, we report the discovery of 2D vdW multiferroic with out-of-plane ferroelectric polarization in trilayer NiI2 device, as revealed by scanning reflective magnetic circular dichroism microscopy and ferroelectric hysteresis loops. The evolution between ferroelectric and antiferroelectric phases has been unambiguously observed. Moreover, the magnetoelectric interaction is directly probed by magnetic control of the multiferroic domain switching. This work opens up opportunities for exploring multiferroic orders and multiferroic physics at the limit of single or few atomic layers, and for creating advanced magnetoelectronic devices.

Flexoelectric Enhancement of Strain Gradient Elasticity Across a Ferroelectric-to-Paraelectric Phase Transition

We study the temperature dependent elastic properties of Ba0.8Sr0.2TiO3 freestanding membranes across the ferroelectric-to-paraelectric phase transition using an atomic force microscope. The bending rigidity of thin membranes can be stiffer compared to stretching due to strain gradient elasticity (SGE). We measure the Young's modulus of freestanding Ba0.8Sr0.2TiO3 drumheads in bending and stretching dominated deformation regimes on a variable temperature platform, finding a peak in the difference between the two Young's moduli obtained at the phase transition. This demonstrates a dependence of SGE on the dielectric properties of a material and alludes to a flexoelectric origin of an effective SGE.

Multimodal Artificial Synapses for Neuromorphic Application

The rapid development of neuromorphic computing has led to widespread investigation of artificial synapses. These synapses can perform parallel in-memory computing functions while transmitting signals, enabling low-energy and fast artificial intelligence. Robots are the most ideal endpoint for the application of artificial intelligence. In the human nervous system, there are different types of synapses for sensory input, allowing for signal preprocessing at the receiving end. Therefore, the development of anthropomorphic intelligent robots requires not only an artificial intelligence system as the brain but also the combination of multimodal artificial synapses for multisensory sensing, including visual, tactile, olfactory, auditory, and taste. This article reviews the working mechanisms of artificial synapses with different stimulation and response modalities, and presents their use in various neuromorphic tasks. We aim to provide researchers in this frontier field with a comprehensive understanding of multimodal artificial synapses.

Defect Engineering Centrosymmetric 2D Material Flexocatalysts

In this study, the flexoelectric characteristics of 2D TiO2 nanosheets are examined. The theoretical calculations and experimental results reveal an excellent strain-induced flexoelectric potential (flexopotential) by an effective defect engineering strategy, which suppresses the recombination of electron-hole pairs, thus substantially improving the catalytic activity of the TiO2 nanosheets in the degradation of Rhodamine B dye and the hydrogen evolution reaction in a dark environment. The results indicate that strain-induced bandgap reduction enhances the catalytic activity of the TiO2 nanosheets. In addition, the TiO2 nanosheets degraded Rhodamine B, with kobs being ≈1.5 × 10-2 min-1 in dark, while TiO2 nanoparticles show only an adsorption effect. 2D TiO2 nanosheets achieve a hydrogen production rate of 137.9 µmol g-1 h-1 under a dark environment, 197% higher than those of TiO2 nanoparticles (70.1 µmol g-1 h-1). The flexopotential of the TiO2 nanosheets is enhanced by increasing the bending moment, with excellent flexopotential along the y-axis. Density functional theory is used to identify the stress-induced bandgap reduction and oxygen vacancy formation, which results in the self-dissociation of H2O on the surface of the TiO in the dark. The present findings provide novel insights into the role of TiO2 flexocatalysis in electrochemical reactions.

Unfolding the Challenges To Prepare Single Crystalline Complex Oxide Membranes by Solution Processing

The ability to prepare single crystalline complex oxide freestanding membranes has opened a new playground to access new phases and functionalities not available when they are epitaxially bound to the substrates. The water-soluble Sr3Al2O6 (SAO) sacrificial layer approach has proven to be one of the most promising pathways to prepare a wide variety of single crystalline complex oxide membranes, typically by high vacuum deposition techniques. Here, we present solution processing, also named chemical solution deposition (CSD), as a cost-effective alternative deposition technique to prepare freestanding membranes identifying the main processing challenges and how to overcome them. In particular, we compare three different strategies based on interface and cation engineering to prepare CSD (00l)-oriented BiFeO3 (BFO) membranes. First, BFO is deposited directly on SAO but forms a nanocomposite of Sr-Al-O rich nanoparticles embedded in an epitaxial BFO matrix because the Sr-O bonds react with the solvents of the BFO precursor solution. Second, the incorporation of a pulsed laser deposited La0.7Sr0.3MnO3 (LSMO) buffer layer on SAO prior to the BFO deposition prevents the massive interface reaction and subsequent formation of a nanocomposite but migration of cations from the upper layers to SAO occurs, making the sacrificial layer insoluble in water and withholding the membrane release. Finally, in the third scenario, a combination of LSMO with a more robust sacrificial layer composition, SrCa2Al2O6 (SC2AO), offers an ideal building block to obtain (001)-oriented BFO/LSMO bilayer membranes with a high-quality interface that can be successfully transferred to both flexible and rigid host substrates. Ferroelectric fingerprints are identified in the BFO film prior and after membrane release. These results show the feasibility to use CSD as alternative deposition technique to prepare single crystalline complex oxide membranes widening the range of available phases and functionalities for next-generation electronic devices.

Experimental demonstration of tunable hybrid improper ferroelectricity in double-perovskite superlattice films

Hybrid improper ferroelectricity can effectively avoid the intrinsic chemical incompatibility of electronic mechanism for multiferroics. Perovskite superlattices, as theoretically proposed hybrid improper ferroelectrics with simple structure and high technological compatibility, are conducive to device integration and miniaturization, but the experimental realization remains elusive. Here, we report a strain-driven oxygen octahedral distortion strategy for hybrid improper ferroelectricity in La2NiMnO6/La2CoMnO6 double-perovskite superlattices. The epitaxial growth mode with mixed crystalline orientations maintains a large strain transfer distance more than 90 nm in the superlattice films with lattice mismatch less than 1%. Such epitaxial strain permits sustainable long-range modulation of oxygen octahedral rotation and tilting, thereby inducing and regulating hybrid improper ferroelectricity. A robust room-temperature ferroelectricity with remnant polarization of ~ 0.16 μC cm-2 and piezoelectric coefficient of 2.0 pm V-1 is obtained, and the density functional theory calculations and Landau-Ginsburg-Devonshire theory reveal the constitutive correlations between ferroelectricity, octahedral distortions, and strain. This work addresses the gap in experimental studies of hybrid improper ferroelectricity for perovskite superlattices and provides a promising research platform and idea for designing and exploring hybrid improper ferroelectricity.

Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond

Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.

Flexoelectric Engineering of Bulk Photovoltaic Photodetector

The bulk photovoltaic effect (BPVE) offers an interesting approach to generate a steady photocurrent in a single-phase material under homogeneous illumination, and it has been extensively investigated in ferroelectrics exhibiting spontaneous polarization that breaks inversion symmetry. Flexoelectricity breaks inversion symmetry via a strain gradient in the otherwise nonpolar materials, enabling manipulation of ferroelectric order without an electric field. Combining these two effects, we demonstrate active mechanical control of BPVE in suspended 2-dimensional CuInP2S6 (CIPS) that is ferroelectric yet sensitive to electric field, which enables practical photodetection with an order of magnitude enhancement in performance. The suspended CIPS exhibits a 20-fold increase in photocurrent, which can be continuously modulated by either mechanical force or light polarization. The flexoelectrically engineered photodetection device, activated by air pressure and without any optimization, possesses a responsivity of 2.45 × 10-2 A/W and a detectivity of 1.73 × 1011 jones, which are superior to those of ferroelectric-based photodetection and comparable to those of the commercial Si photodiode.

Advancements and Prospects of Flexoelectricity

The flexoelectric effect, as a novel form of the electromechanical coupling phenomenon, has attracted significant attention in the fields of materials science and electronic devices. It refers to the interaction between strain gradients and electric dipole moments or electric field intensity gradients and strain. In contrast to the traditional piezoelectric effect, the flexoelectric effect is not limited by material symmetry or the Curie temperature and exhibits a stronger effect at the nanoscale. The flexoelectric effect finds widespread applications ranging from energy harvesting to electronic device design. Utilizing the flexoelectric effect, enhanced energy harvesters, sensitive sensors, and high-performance wearable electronic devices can be developed. Additionally, the flexoelectric effect can be utilized to modulate the optoelectronic properties and physical characteristics of materials, holding the potential for significant applications in areas such as optoelectronic devices, energy storage devices, and flexible electronics. This review provides a comprehensive overview of the historical development, measurement of flexoelectric coefficients, enhancement mechanisms, and current research progress of the flexoelectric effect. Additionally, it offers a perspective on future prospects of the flexoelectric effect.

Giant Flexoelectricity in Bent Semiconductor Thinfilm

We elucidate the flexoelectricity of semiconductors in the high strain gradient regime, the underlying mechanism of which is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms of Si and Ge due to a high-strain-gradient-induced band gap closure. We show that an unusual type-II band alignment is formed between the compressed and elongated sides of the bent film. Therefore, upon the band gap closure, electrons transfer from the compressed side to the elongated side to reach the thermodynamic equilibrium, leading to a pronounced change of polarization along the film thickness dimension. The obtained transverse flexoelectric coefficients are unexpectedly high with a quadratic dependence on the film thickness. This new mechanism is extendable to other semiconductor materials with moderate energy gaps. Our findings have important implications for the future applications of flexoelectricity in semiconductor materials.

Electrode Effect on Ferroelectricity in Free-Standing Membranes of PbZr0.2Ti0.8O3

We report the effects of screening capacity, surface roughness, and interfacial epitaxy of the bottom electrodes on the polarization switching, domain wall (DW) roughness, and ferroelectric Curie temperature (TC) of PbZr0.2Ti0.8O3 (PZT)-based free-standing membranes. Singe crystalline 10-50 nm (001) PZT and PZT/La0.67Sr0.33MnO3 (LSMO) membranes are prepared on Au, correlated oxide LSMO, and two-dimensional (2D) semiconductor MoS2 base layers. Switching the polarization of PZT yields nonvolatile current modulation in the MoS2 channel at room temperature, with an on/off ratio of up to 2 × 105 and no apparent decay for more than 3 days. Piezoresponse force microscopy studies show that the coercive field Ec for the PZT membranes varies from 0.75 to 3.0 MV cm-1 on different base layers and exhibits strong polarization asymmetry. The PZT/LSMO membranes exhibit significantly smaller Ec, with the samples transferred on LSMO showing symmetric Ec of about -0.26/+0.28 MV cm-1, smaller than that of epitaxial PZT films. The DW roughness exponent ζ points to 2D random bond disorder dominated DW roughening (ζ = 0.31) at room temperature. Upon thermal quench at progressively higher temperatures, ζ values for PZT membranes on Au and LSMO approach the theoretical value for 1D random bond disorder (ζ = 2/3), while samples on MoS2 exhibits thermal roughening (ζ = 1/2). The PZT membranes on Au, LSMO, and MoS2 show TC of about 763 ± 12, 725 ± 25, and 588 ± 12 °C, respectively, well exceeding the bulk value. Our study reveals the complex interplay between the electrostatic and mechanical boundary conditions in determining ferroelectricity in free-standing PZT membranes, providing important material parameters for the functional design of PZT-based flexible nanoelectronics.

Interface-type tunable oxygen ion dynamics for physical reservoir computing

Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. High-efficiency reservoir systems require nonlinear and dynamic responses to distinguish time-series input data. Herein, an interface-type dynamic transistor gated by an Hf0.5Zr0.5O2 (HZO) film was introduced to perform reservoir computing. The channel conductance of Mott material La0.67Sr0.33MnO3 (LSMO) can effectively be modulated by taking advantage of the unique coupled property of the polarization process and oxygen migration in hafnium-based ferroelectrics. The large positive value of the oxygen vacancy formation energy and negative value of the oxygen affinity energy resulted in the spontaneous migration of accumulated oxygen ions in the HZO films to the channel, leading to the dynamic relaxation process. The modulation of the channel conductance was found to be closely related to the current state, identified as the origin of the nonlinear response. In the time series recognition and prediction tasks, the proposed reservoir system showed an extremely low decision-making error. This work provides a promising pathway for exploiting dynamic ion systems for high-performance neural network devices.

Three-dimensional porous borocarbonitride composed of pentagonal motifs as a high-performance pyroelectric material

Pyroelectric materials have been attracting significant attention due to their intrinsic and permanent polarization, where the induced polarization is not associated with specific conditions, such as ferroelectric phase transition, strain gradient, dopants, and electric field. Thus, these materials have great potential for wide applications in energy conversion. Here, we propose a new 3D porous borocarbonitride termed PH-BCN, which is composed of pentagonal motifs with intrinsic polarization along the [0001] direction. Based on first-principles calculations, we show that PH-BCN possesses a record high longitudinal electromechanical coupling coefficient with the value of k33 = 97.99%, a remarkably strong SHG response (χ(2)xzx(0) = χ(2)yzy(0) = χ(2)zxx(0) = χ(2)zyy(0) = -6.23 pm V-1 and χ(2)zzz(0) = 21.21 pm V-1), and a record high shift current value of 908.58 μA V-2 due to the intrinsic vertical polarization. This study expands the family of pentagon-based materials, and may open a new frontier in the design of high-performance pyroelectric materials as well.

Flexomagnetic Effect Enhanced Ferromagnetism and Magnetoelectrochemistry in Freestanding High-Entropy Alloy Films

Freestanding thin films of functional materials enable the tuning of properties via strain and strain gradients, broadening their applications. Here, a systematic approach is proposed to fabricate freestanding CrMnFeCoNi high-entropy alloy (HEA) thin films by pulsed laser deposition using expansion-contraction of NaCl substrates and weak van der Waals interaction of the interface, which form wrinkles with inhomogeneous strain gradients when transferred to a viscous handle. We demonstrate that the nonuniform gradients of external strain (flexomagnetic effect) can induce the partial structural phase transition from FCC to BCC in the wrinkled HEA film, resulting in a 10-fold increase in its room-temperature saturation magnetization compared with the unstrained flat HEA film. Furthermore, after applying an external magnetic field, due to the different electron transfer behavior caused by the electron scattering in wrinkled and flat HEA films, their electrocatalytic magnetic responses showed a diametrically opposite picture. Our work provides a promising strategy for tuning physical and chemical properties via complex strained geometries.

Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications

Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of emergent 2D systems. Here, we review recent advances in the theory, synthesis, characterization, device, and quantum physics of 2D materials and their heterostructures. First, we shed insight into modeling of defects and intercalants, focusing on their formation pathways and strategic functionalities. We also review machine learning for synthesis and sensing applications of 2D materials. In addition, we highlight important development in the synthesis, processing, and characterization of various 2D materials (e.g., MXnenes, magnetic compounds, epitaxial layers, low-symmetry crystals, etc.) and discuss oxidation and strain gradient engineering in 2D materials. Next, we discuss the optical and phonon properties of 2D materials controlled by material inhomogeneity and give examples of multidimensional imaging and biosensing equipped with machine learning analysis based on 2D platforms. We then provide updates on mix-dimensional heterostructures using 2D building blocks for next-generation logic/memory devices and the quantum anomalous Hall devices of high-quality magnetic topological insulators, followed by advances in small twist-angle homojunctions and their exciting quantum transport. Finally, we provide the perspectives and future work on several topics mentioned in this review.

A flexoelectricity-enabled ultrahigh piezoelectric effect of a polymeric composite foam as a strain-gradient electric generator

All dielectric materials including ceramics, semiconductors, biomaterials, and polymers have the property of flexoelectricity, which opens a fertile avenue to sensing, actuation, and energy harvesting by a broad range of materials. However, the flexoelectricity of solids is weak at the macroscale. Here, we achieve an ultrahigh flexoelectric effect via a composite foam based on PDMS and CCTO nanoparticles. The mass- and deformability-specific flexoelectricity of the foam exceeds 10,000 times that of the solid matrix under compression, yielding a density-specific equivalent piezoelectric coefficient 120 times that of PZT. The flexoelectricity output remains stable in 1,000,000 deformation cycles, and a portable sample can power LEDs and charge mobile phones and Bluetooth headsets. Our work provides a route to exploiting flexible and light-weight materials with highly sensitive omnidirectional electromechanical coupling that have applications in sensing, actuation, and scalable energy harvesting.

Significant Suppression of Cracks in Freestanding Perovskite Oxide Flexible Sheets Using a Capping Oxide Layer

Flexible and functional perovskite oxide sheets with high orientation and crystallization are the next step in the development of next-generation devices. One promising synthesis method is the lift-off and transfer method using a water-soluble sacrificial layer. However, the suppression of cracks during lift-off is a crucial problem that remains unsolved. In this study, we demonstrated that this problem can be solved by depositing amorphous Al₂O₃ capping layers on oxide sheets. Using this simple method, over 20 mm² of crack-free, deep-ultraviolet transparent electrode La:SrSnO₃ and ferroelectric Ba_0.75Sr_0.25TiO₃ flexible sheets were obtained. By contrast, the sheets without any capping layers broke. The obtained sheets showed considerable flexibility and high functionality. The La:SrSnO₃ sheet simultaneously exhibited a wide bandgap (4.4 eV) and high electrical conductivity (>10³ S/cm). The Ba_0.75Sr_0.25TiO₃ sheet exhibited clear room-temperature ferroelectricity with a remnant polarization of 17 μC/cm². Our findings provide a simple transfer method for obtaining large, crack-free, high-quality, single-crystalline sheets.

Flexible strategy of epitaxial oxide thin films

Applying functional oxide thin films to flexible devices is of great interests within the rapid development of information technology. The challenges involve the contradiction between the high-temperature growth of high-quality oxide films and low melting point of the flexible supports. This review summarizes the developed methods to fabricate high-quality flexible oxide thin films with novel functionalities and applications. We start from the fabrication methods, e.g. direct growth on flexible buffered metal foils and layered mica, etching and transfer approach, as well as remote epitaxy technique. Then, various functionalities in flexible oxide films will be introduced, specifically, owing to the mechanical flexibility, some unique properties can be induced in flexible oxide films. Taking the advantages of the excellent physical properties, the flexible oxide films have been employed in various devices. Finally, future perspectives in this research field will be proposed to further develop this field from fabrication, functionality to device.

Coupling Enhancement of a Flexible BiFeO3 Film-Based Nanogenerator for Simultaneously Scavenging Light and Vibration Energies

Coupled nanogenerators have been a research hotspot due to their ability to harvest a variety of forms of energy such as light, mechanical and thermal energy and achieve a stable direct current output. Ferroelectric films are frequently investigated for photovoltaic applications due to their unique photovoltaic properties and bandgap-independent photovoltage, while the flexoelectric effect is an electromechanical property commonly found in solid dielectrics. Here, we effectively construct a new form of coupled nanogenerator based on a flexible BiFeO₃ ferroelectric film that combines both flexoelectric and photovoltaic effects to successfully harvest both light and vibration energies. This device converts an alternating current into a direct current and achieves a 6.2% charge enhancement and a 19.3% energy enhancement to achieve a multi-dimensional "1 + 1 > 2" coupling enhancement in terms of current, charge and energy. This work proposes a new approach to the coupling of multiple energy harvesting mechanisms in ferroelectric nanogenerators and provides a new strategy to enhance the transduction efficiency of flexible functional devices.

Magneto-Electric-Optical Coupling in Multiferroic BiFeO3 -Based Films

Manipulating ferroic orders and realizing their coupling in multiferroics at room temperature are promising for designing future multifunctional devices. Single external stimulation has been extensively proved to demonstrate the ability of ferroelastic switching in multiferroic oxides, which is crucial to bridge the ferroelectricity and magnetism. However, it is still challenging to directly realize multi-field-driven magnetoelectric coupling in multiferroic oxides as potential multifunctional electrical devices. Here, novel magneto-electric-optical coupling in multiferroic BiFeO₃ -based thin films at room temperature mediated by deterministic ferroelastic switching using piezoresponse/magnetic force microscopy and aberration-corrected transmission electron microscopy are shown. Reversible photoinduced ferroelastic switching exhibiting magnetoelectric responses is confirmed in BiFeO₃ -based films, which works at flexible strain states. This work directly demonstrates room-temperature magneto-electric-optical coupling in multiferroic films, which provides a framework for designing potential multi-field-driven magnetoelectric devices such as energy conservation memories.

Freestanding complex-oxide membranes

Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.

Flexoelectricity-Enhanced Photovoltaic Effect in Self-Polarized Flexible PZT Nanowire Array Devices

In this investigation, we report the flexoelectricity-enhanced photovoltaic (FPV) effect in a flexible Pb(Zr_0.52Ti_0.48)O₃ nanowire (PZT NW) array/PDMS (polydimethylsiloxane) nanocomposite. The simulation result of density functional theory (DFT) indicated that the FPV effect in PZT NWs can be greatly affected by the interactions of the strain gradients with the internal field generated by self-polarization. We found that when the nanocomposite film was curved down, the photovoltaic current of the aligned PZT-NW/PDMS composite increased by 84.6-fold and 27.6-fold compared with the PZT-nanoparticles/PDMS and randomly aligned PZT-NW/PDMS nanocomposites at the same curvature, respectively. This is mainly ascribed to the increased flexoelectricity in the aligned PZT-NW/PDMS nanocomposite. This study will contribute to a full understanding of the influence of nanoparticle shape on the flexophotovoltaic effect of nanocomposites. It will have potential use in nanocomposites for the study of the FPV effect and associated applications.

Bendable Polycrystalline and Magnetic CoFe2O4 Membranes by Chemical Methods

The preparation and manipulation of crystalline yet bendable functional complex oxide membranes has been a long-standing issue for a myriad of applications, in particular, for flexible electronics. Here, we investigate the viability to prepare magnetic and crystalline CoFe₂O₄ (CFO) membranes by means of the Sr₃Al₂O₆ (SAO) sacrificial layer approach using chemical deposition techniques. Meticulous chemical and structural study of the SAO surface and SAO/CFO interface properties have allowed us to identify the formation of an amorphous SAO capping layer and carbonates upon air exposure, which dictate the crystalline quality of the subsequent CFO film growth. Vacuum annealing at 800 °C of SAO films promotes the elimination of the surface carbonates and the reconstruction of the SAO surface crystallinity. Ex-situ atomic layer deposition of CFO films at 250 °C on air-exposed SAO offers the opportunity to avoid high-temperature growth while achieving polycrystalline CFO films that can be successfully transferred to a polymer support preserving the magnetic properties under bending. Float on and transfer provides an alternative route to prepare freestanding and wrinkle-free CFO membrane films. The advances and challenges presented in this work are expected to help increase the capabilities to grow different oxide compositions and heterostructures of freestanding films and their range of functional properties.

The role of lattice dynamics in ferroelectric switching

Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10's of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.

Large-Scale Epitaxial Growth of Ultralong Stripe BiFeO3 Films and Anisotropic Optical Properties

The controlled synthesis of large-scale ferroelectric domains with high uniformity is crucial for practical applications in next-generation nanoelectronics on the basis of their intriguing properties. Here, ultralong and highly uniform stripe domains in (110)-oriented BiFeO₃ thin films are large-area synthesized through a pulsed laser deposition technique. Utilizing scanning transmission electron microscopy and piezoresponse force microscopy, we verified that the ferroelectric domains have one-dimensional 109° domains and the length of a domain is up to centimeter scale. More importantly, the ferroelectric displacement is directly determined on atomic-scale precision, further confirming the domain structure. We find that the unique one-dimensional ferroelectric domain significantly enhances the optical anisotropy. Furthermore, we demonstrate that the purely parallel domain patterns can be used to control photovoltaic current. These ultralong ferroelectric domains can be patterned into various functional devices, which may inspire research efforts to explore their properties and various applications.

Highly Flexible Freestanding BaTiO3 -CoFe2 O4 Heteroepitaxial Nanostructure Self-Assembled with Room-Temperature Multiferroicity

Multiferroics with simultaneous electric and magnetic orderings are highly desirable for sensing, actuation, data storage, and bio-inspired systems, yet developing flexible materials with robust multiferroic properties at room temperature is a long-term challenge. Utilizing water-soluble Sr₃ Al₂ O₆ as a sacrificial layer, the authors have successfully self-assembled a freestanding BaTiO₃ -CoFe₂ O₄ heteroepitaxial nanostructure via pulse laser deposition, and confirmed its epitaxial growth in both out-of-plane and in-plane directions, with highly ordered CoFe₂ O₄ nanopillars embedded in a single crystalline BaTiO₃ matrix free of substrate constraint. The freestanding nanostructure enjoys super flexibility and mechanical integrity, not only capable of spontaneously curving into a roll, but can also be bent with a radius as small as 4.23 µm. Moreover, piezoelectricity and ferromagnetism are demonstrated at both microscopic and macroscopic scales, confirming its robust multiferroicity at room temperature. This work establishes an effective route for flexible multiferroic materials, which have the potential for various practical applications.

Dislocation Defect Layer-Induced Magnetic Bi-states Phenomenon in Epitaxial La0.7Sr0.3MnO3(111) Thin Films

La_0.7Sr_0.3MnO₃ (LSMO) is one of the most fascinating strongly correlated oxides in which the spin polarization and magnetic property are sensitive to strain, especially in the (111)-oriented LSMO. In the paper, epitaxial LSMO(111) thin films with different thicknesses were prepared, and they showed continuous dislocation defect arrays with thickness greater than 45 nm. Then, the thick LSMO(111) films were divided into a double-layer structure with two slightly different oriented cells. The LSMO(111) films present a stronger lattice-spin coupling, thus the double-layer structure triggers an obvious magnetic heterogeneity phenomenon (magnetic bi-states) by the way of creating a double-mode ferromagnetic resonance (FMR) spectrum. Therefore, the nanostructures, especially the ordered structure defects, may trigger enriched physical phenomena and offer new forms of spin coupling and device functionality in strain-sensitive strongly correlated oxide systems.

Integrating Band Engineering and the Flexoelectric Effect Induced by a Composition Gradient for High Photocurrent Density in Bismuth Ferrite Films

Photovoltaic energy as one of the important alternatives to traditional fossil fuels has always been a research hot spot in the field of renewable and clean solar energy. Very recently, the anomalous ferroelectric photovoltaic effect in multiferroic bismuth ferrite (BiFeO₃) has attracted much attention due to the above-bandgap photovoltage and switchable photocurrent. However, its photocurrent density mostly in the magnitudes of μA/cm² resulted in a poor power conversion efficiency, which severely hampered its practical application as a photovoltaic device. In this case, a novel approach was designed to improve the photocurrent density of BiFeO₃ through the cooperative effect of the gradient distribution of oxygen vacancies and consequently induced the flexoelectric effect realized in the (La, Co) gradient-doped BiFeO₃ multilayers. Subsequent results and analysis indicated that the photocurrent density of the gradient-doped multilayer BiFeO₃ sample was nearly 3 times as much as that of the conventional doped single-layer sample. Furthermore, a possible mechanism was proposed herein to demonstrate roles of band engineering and the flexoelectric effect on the photovoltaic performance of the gradient-doped BiFeO₃ film.

Mixed Triboelectric and Flexoelectric Charge Transfer at the Nanoscale

The triboelectric effect is a ubiquitous phenomenon in which the surfaces of two materials are easily charged during the contact-separation process. Despite the widespread consequences and applications, the charging mechanisms are not sufficiently understood. Here, the authors report that, in the presence of a strain gradient, the charge transfer is a result of competition between flexoelectricity and triboelectricity, which could enhance charge transfer during triboelectric measurements when the charge transfers of both effects are in the same direction. When they are in the opposite directions, the direction and amount of charge transfer could be modulated by the competition between flexoelectric and triboelectric effects, which leads to a distinctive phenomenon, that is, the charge transfer is reversed with varying forces. The subsequent results on the electrical power output signals from the triboelectrification support the proposed mechanism. Therefore, the present study emphasizes the key role of the flexoelectric effect through experimental approaches, and suggests that both the amount and direction of charge transfer can be modulated by manipulating the mixed triboelectric and flexoelectric effects. This finding may provide important information on the triboelectric effect and can be further extended to serve as a guideline for material selection during a nanopatterned device design.

Flexo-photovoltaic effect in MoS2

The theoretical Shockley-Queisser limit of photon-electricity conversion in a conventional p-n junction could be potentially overcome by the bulk photovoltaic effect that uniquely occurs in non-centrosymmetric materials. Using strain-gradient engineering, the flexo-photovoltaic effect, that is, the strain-gradient-induced bulk photovoltaic effect, can be activated in centrosymmetric semiconductors, considerably expanding material choices for future sensing and energy applications. Here we report an experimental demonstration of the flexo-photovoltaic effect in an archetypal two-dimensional material, MoS₂, by using a strain-gradient engineering approach based on the structural inhomogeneity and phase transition of a hybrid system consisting of MoS₂ and VO₂. The experimental bulk photovoltaic coefficient in MoS₂ is orders of magnitude higher than that in most non-centrosymmetric materials. Our findings unveil the fundamental relation between the flexo-photovoltaic effect and a strain gradient in low-dimensional materials, which could potentially inspire the exploration of new optoelectronic phenomena in strain-gradient-engineered materials.

Flexo-photoelectronic effect in n-type/p-type two-dimensional semiconductors and a deriving light-stimulated artificial synapse

Flexoelectricity and photoelectricity with their coupled effect (the so-called flexo-photoelectronic effect), are of increasing interest in the study of electronics and optoelectronics in van der Waals layered semiconductors. However, the related device design is severely restricted owing to the ambiguous underlying physical nature of flexo-photoelectronic effects originating from the co-manipulation of light and strain-gradients. Here, flexoelectric polarization and the flexo-photoelectronic effect of few-layered semiconductors have been multi-dimensionally investigated from high-resolution microscopic characterization on the nanoscale, physics analysis, and deriving a device design. We found that two back-to-back built-in electric fields form in bent InSe and WSe₂, and greatly modulate the transport behaviors of photogenerated carriers, further facilitating the separation of photogenerated electron-hole pairs and trapping the holes/electrons in InSe or WSe₂ channels, recorded in realtime by a home-made technique of lighting Kelvin probe force microscopy (KPFM). The slow release of trapped carriers contributes to the photoconductance relaxation after illumination. Utilizing the photoconductance relaxation, a light-stimulated artificial synapse based on the flexo-photoelectronic effect of bent InSe has been achieved. Significantly, all the pair-pulse facilitation (PPF) behavior, spike frequency-dependent excitatory post-synaptic current (EPSC) and the transition from short-term memory (STM) to long-term memory (LTM) have been successfully realized in this artificial synapse. This work adds to the investigation of flexo-photoelectronic effects on 2D optoelectronics, and moves towards the development of 2D neuromorphic electronics.

Large Low-Field Magnetoresistance (LFMR) Effect in Free-Standing La0.7Sr0.3MnO3 Films

The realization of a large low-field magnetoresistance (LFMR) effect in free-standing magnetic oxide films is a crucial goal toward promoting the development of flexible, low power consumption, and nonvolatile memory devices for information storage. La_0.7Sr_0.3MnO₃ (LSMO) is an ideal material for spintronic devices due to its excellent magnetic and electronic properties. However, it is difficult to achieve both a large LFMR effect and high flexibility in LSMO films due to the lack of research on LFMR-related mechanisms and the strict LSMO growth conditions, which require rigid substrates. Here, we induced a large LFMR effect in an LSMO/mica heterostructure by utilizing a disorder-related spin-polarized tunneling effect and developed a simple transfer method to obtain free-standing LSMO films for the first time. Electrical and magnetic characterizations of these free-standing LSMO films revealed that all of the principal properties of LSMO were sustained under compressive and tensile conditions. Notably, the magnetoresistance of the processed LSMO film reached up to 16% under an ultrasmall magnetic field (0.1 T), which is 80 times that of a traditional LSMO film. As a demonstration, a stable nonvolatile multivalue storage function in flexible LSMO films was successfully achieved. Our work may pave the way for future wearable resistive memory device applications.

Strain Relaxation in "2D/2D and 2D/3D Systems": Highly Textured Mica/Bi2Te3, Sb2Te3/Bi2Te3, and Bi2Te3/GeTe Heterostructures

Strain engineering as a method to control functional properties has seen in the last decades a surge of interest. Heterostructures comprising 2D-materials and containing van der Waals(-like) gaps were considered unsuitable for strain engineering. However, recent work on heterostructures based on Bi₂Te₃, Sb₂Te₃, and GeTe showed the potential of a different type of strain engineering due to long-range mutual straining. Still, a comprehensive understanding of the strain relaxation mechanism in these telluride heterostructures is lacking due to limitations of the earlier analyses performed. Here, we present a detailed study of strain in two-dimensional (2D/2D) and mixed dimensional (2D/3D) systems derived from mica/Bi₂Te₃, Sb₂Te₃/Bi₂Te₃, and Bi₂Te₃/GeTe heterostructures, respectively. We first clearly show the fast relaxation process in the mica/Bi₂Te₃ system where the strain was generally transferred and confined up to the second or third van der Waals block and then abruptly relaxed. Then we show, using three independent techniques, that the long-range exponentially decaying strain in GeTe and Sb₂Te₃ grown on the relaxed Bi₂Te₃ and Bi₂Te₃ on relaxed Sb₂Te₃ as directly observed at the growth surface is still present within these three different top layers a long time after growth. The observed behavior points at immediate strain relaxation by plastic deformation without any later relaxation and rules out an elastic (energy minimization) model as was proposed recently. Our work advances the understanding of strain tuning in textured heterostructures or superlattices governed by anisotropic bonding.

Photovoltaic properties in an orthorhombic Fe doped KTN single crystal

Since the domain wall photovoltaic effect (DW-PVE) is reported in BiFeO₃ film, the investigations on photovoltaic properties in ferroelectrics have appealed more and more attention. In this work, we employed two Fe doped KTa_1-xNbxO₃ (Fe:KTN) single crystals in tetragonal phase and orthorhombic phase, respectively, possessing similar net polarization along [001]_C direction, to quantize the contribution on photovoltaic properties from bulk photovoltaic effect (BPVE) and DW-PVE in Fe:KTN. The results show that there are significant enhancements of open-circuit voltages (V_OC = -6.0 V, increases over 440%) and short-circuit current density (J_SC = 18.5 nA cm^-2, increases over 1580%) in orthorhombic Fe:KTN with engineer-domain structure after poled, corresponding to 14.2 mV and 2.2 mV for the single domain wall and bulk region under illumination of 405 nm light (100 mW). It reveals that DW-PVE plays a major role in KTN-based ferroelectrics, indicating an orthorhombic Fe:KTN single crystal is one of the potential photovoltaic materials.