Ultrathin-metal-film-based transparent electrodes with relative transmittance surpassing 100

Overcoming the Tradeoff of Visible Transparency and Electrical Conductance via Dual Smoothing of Dielectric/Metal Interfaces in Cu-Thin-Layer-Based Transparent Electrodes

The rapid advancement of flexible optoelectronic devices, such as light-emitting diodes, solar cells, and electrochromic devices, necessitates the development of high-performance flexible transparent electrodes (TEs). Dielectric/metal/dielectric (DMD)-type TEs are promising alternatives to conventional indium tin oxide (ITO) due to the high electrical conductance, excellent visible transparency, and sufficient mechanical flexibility. However, the tradeoff between electrical conductance and visible transparency poses a challenge to performance enhancement. This study introduces an Ar-ion-mediated interface modification method to address this tradeoff by dual smoothing of dielectric/metal interfaces in TiOx/Cu/ZnO TEs. Implementing this dual smoothing methodology significantly enhances both electrical conductance and visible light transmittance, achieving a Haacke figure of merit 200% higher than that of an unmodified otherwise identical structure. The highest figure of merit is 0.113 Ω-1, a record high for Cu-thin-layer-based DMD TEs, far surpassing ITO electrode values. Further, the enhanced optoelectronic performance remains highly durable under severe and simultaneous electrical, thermal, and mechanical stresses, showcasing the potential for significant advances in flexible optoelectronics.

Kill Two Birds with One Stone: Cracking Lithography Technology for High-Performance Flexible Metallic Network Transparent Conductors and Metallic Micronano Sheets

Flexible electronics have sparked a wide range of exciting applications, such as flexible display technologies, lighting, sensing, etc. Flexible conductors are essential components of flexible electronics and seriously affect efficiency and overall performance. Here, a facile and kill-two-birds-with-one-stone strategy of cracking lithography technology has been proposed to simultaneously fabricate two high-performance flexible conductors, flexible metallic network transparent conductors (f-NTCs) and metallic micronano sheets (MMNSs). The PET substrate flexible transparent conductors (FTCs) based on this strategy yield 88.1% transparency within the visible spectrum and a sheet resistance of 9 Ω/sq. In addition, the FTCs show exceptional mechanical stability, with the sheet resistance remaining virtually unchanged even after 6000 s of bending tests. Subsequently, the remaining MMNSs are recycled to manufacture a Ag paste, showing a very low conductive percolation threshold (∼13%) and excellent flexibility with 140% breaking elongation. After 1000 s of stretching tests, it showed excellent mechanical stability. Furthermore, flexible electroluminescent devices based on the FTCs and sensors fabricated with MMNSs both show excellent performance, demonstrating their potential wide applications in flexible electronics.

Selective Void Deposition by Continuous, Ultrathin Ag Film Enabled Stable, High-Performance AgNWs-Based Transparent Heaters

Metallic nanowire-based transparent conductors (MNTCs) are essential to various technologies, including displays, heat-regulating windows, and photo-communication. Hybrid configurations are primarily adopted to design stable, high-functioning MNTCs. Although hybrid MNTCs enhance electrical performance, they often suffer from optical degradation due to losses associated with the hybrid layers. Highly conductive hybrid MNTCs with minimal reduction in transparency are achieved with AgNWs/Ag(O)/Al-doped ZnO (AZO) design. The design provides a high visible light transmittance of 95.1%, representing a minimized optical loss of 3% compared to pristine AgNWs by optimizing optical interference between the AZO and Ag(O) layers. Furthermore, it allows for enhanced mobility of metallic nanowires by controlling the selective formation of conductive layers in the voids of the nanowire networks. The oxygen additive enables a continuous Ag ultrathin film of 6 nm in the macro-voids of AgNWs system, corresponding to 25 times higher mobility for AgNWs/Ag(O)/AZO than that of sole AgNWs. The significant enhancement in the mobility of AgNWs/Ag(O)/AZO induces a reduction of sheet resistance of MNTCs by 73%. The AgNWs/Ag(O)/AZO, with an optimized sheet resistance of 24 Ω sq-1, is explored for transparent heater applications, demonstrating a fast thermal response with reliable stability, as evidenced by consistent high-temperature profiles during prolonged operation.

Recent Advances in Transparent Electrodes and Their Multimodal Sensing Applications

This review examines the recent advancements in transparent electrodes and their crucial role in multimodal sensing technologies. Transparent electrodes, notable for their optical transparency and electrical conductivity, are revolutionizing sensors by enabling the simultaneous detection of diverse physical, chemical, and biological signals. Materials like graphene, carbon nanotubes, and conductive polymers, which offer a balance between optical transparency, electrical conductivity, and mechanical flexibility, are at the forefront of this development. These electrodes are integral in various applications, from healthcare to solar cell technologies, enhancing sensor performance in complex environments. The paper addresses challenges in applying these electrodes, such as the need for mechanical flexibility, high optoelectronic performance, and biocompatibility. It explores new materials and innovative techniques to overcome these hurdles, aiming to broaden the capabilities of multimodal sensing devices. The review provides a comparative analysis of different transparent electrode materials, discussing their applications and the ongoing development of novel electrode systems for multimodal sensing. This exploration offers insights into future advancements in transparent electrodes, highlighting their transformative potential in bioelectronics and multimodal sensing technologies.

Even-Odd Layer Oscillatory Behavior of Electronic and Phononic Specific Heat in an Ultra-Thin Metal Film

Both electronic and phononic statistical and thermal properties, modulated by the quantum size effect, are suggested in a thin metal film. In order to show the quantum size effect of specific heat, the densities of the electron and phonon states of an ultra-thin film are treated within the framework of quantum statistics. It was found that strong and weak "even-odd layer oscillatory behavior" was exhibited by the ultra-thin metal film in electronic and lattice specific heat, respectively. Such a behavior, which depends on film thickness, results from the quantum confinement of electrons and phonons in the vertical (thickness) direction of the film, where both electrons and phonons form their respective quantum well standing wave modes. If, for example, the thickness of the ultra-thin metal film is exactly an integer multiple of a half wavelength of the standing wave of electrons in the thickness direction, the corresponding density of states would become maximized, and the electronic specific heat would take its maximum. In the literature, less attention has been paid to the size-dependent electron Fermi wavelength for quantum size effects, i.e., the Fermi wavelength in ultra-thin metal films has always been identified as a constant. We shall show how the Fermi wavelength varies with the size of a nanofilm, including an explicit analytic formulation for the thickness dependence of the electron Fermi wavelength. Size-dependent resonantly oscillatory behavior, depending on the ultra-thin or nanoscale film thickness, would have possible significance for researching some fundamental physical characteristics (e.g., low-dimensional quantum statistics) and may find potential applications in new thermodynamic device design.

Efficient Semitransparent Solar Cells Enabled by Introducing N-Ethylbenzylamine Additives into Thin Layer of Halide Perovskites

Semitransparent perovskite solar cells (ST-PSCs) have opened up new applications in tandem devices and building-integrated photovoltaics. Decreasing the thickness of the perovskite film makes it feasible to fabricate semitransparent perovskite layers. However, the formation of high-quality thin perovskite films has been a challenge during the film manufacturing process since the crystallization dynamics of thinner (<200 nm) films are different from that of thick films. In this article, we demonstrate a feasible method to fabricate a thinner layer of highly crystalline perovskites with low defect density for efficient ST-PSCs by introducing N-Ethylbenzylamine (EBA) to modify halide perovskites through Lewis acid-base interaction. As a result, a semitransparent solar cell based on EBA-treated perovskite with a film thickness of only ∼190 nm exhibits a high power conversion efficiency (PCE) of 14.77%, an average visible transmittance (AVT) of 13.2%, and an excellent light utilization efficiency (LUE) of 1.95%, which is the highest value in the ST-PSCs with Au as the electrode. Our findings highlight the effectiveness of the EBA additive in improving the photovoltaic performance of ST-PSCs, offering valuable insights into developing efficient and transparent photovoltaic technologies.

Conductive PEDOT-Dominant Surface of Transparent Electrode Patch via Selective Phase Transfer for Efficient Flexible Photoelectronic Devices

In this study, a conductive patch for a flexible organic optoelectronic device is proposed and implemented using a poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) polymer electrode based on a transfer process to achieve its high conductivity with an efficient conductive pathway. This PEDOT-dominant surface is induced by phase inversion during the transfer process owing to the solvent affinity of the PSS phase. The PEDOT:PSS patch formed by the transfer process minimizes the power loss in a flexible optoelectronic device due to the improved charge collection and suppressed leakage current responses. In addition, the bending stability of the flexible photoelectronic device is also enhanced by maintaining performance for 1000 bending cycles. Therefore, in the fabrication of a transparent flexible conductive PEDOT:PSS patch, the transfer process of a conducting polymer constitutes an effective strategy that can improve conductivity and embellished morphology.

Controlled Structural Relaxation of Aramid Nanofibers for Superstretchable Polymer Fibers with High Toughness and Heat Resistance

Polymer fibers that combine high toughness and heat resistance are hard to achieve, which, however, hold tremendous promise in demanding applications such as aerospace and military. This prohibitive design task exists due to the opposing property dependencies on chain dynamics because traditional heat-resistant materials with rigid molecular structures typically lack the mechanism of energy dissipation. Aramid nanofibers have received great attention as high-performance nanoscale building units due to their intriguing mechanical and thermal properties, but their distinct structural features are yet to be fully captured. We show that aramid nanofibers form nanoscale crimps during the removal of water, which primarily resides at the defect planes of pleated sheets, where the folding can occur. The precise control of such a structural relaxation can be realized by exerting axial loadings on hydrogel fibers, which allows the emergence of aramid fibers with varying angles of crimps. These crimped fibers integrate high toughness with heat resistance, thanks to the extensible nature of nanoscale crimps with rigid molecular structures of poly(p-phenylene terephthalamide), promising as a template for stable stretchable electronics. The tensile strength/modulus (392-944 MPa/11-29 GPa), stretchability (25-163%), and toughness (154-445 MJ/cm3) are achieved according to the degree of crimping. Intriguingly, a toughness of around 430 MJ/m3 can be maintained after calcination below the relaxation temperature (259 °C) for 50 h. Even after calcination at 300 °C for 10 h, a toughness of 310 MJ/m3 is kept, outperforming existing polymer materials. Our multiscale design strategy based on water-bearing aramid nanofibers provides a potent pathway for tackling the challenge for achieving conflicting property combinations.

Multispectral Holographic Intensity and Phase Imaging of Semitransparent Ultrathin Films

In this paper, we demonstrate a novel optical characterization method for ultrathin semitransparent and absorbing materials through multispectral intensity and phase imaging. The method is based on a lateral-shearing interferometric microscopy (LIM) technique, where phase-shifting allows extraction of both the intensity and the phase of transmitted optical fields. To demonstrate the performance in characterizing semitransparent thin films, we fabricated and measured cupric oxide (CuO) seeded gold ultrathin metal films (UTMFs) with mass-equivalent thicknesses from 2 to 27 nm on fused silica substrates. The optical properties were modeled using multilayer thin film interference and a parametric model of their complex refractive indices. The UTMF samples were imaged in the spectral range from 475 to 750 nm using the proposed LIM technique, and the model parameters were fitted to the measured data in order to determine the respective complex refractive indices for varying thicknesses. Overall, by using the combined intensity and phase not only for imaging and quality control but also for determining the material properties, such as complex refractive indices, this technique demonstrates a high potential for the characterization of the optical properties, of (semi-) transparent thin films.

Flexible Transparent Electrodes Formed from Template-Patterned Thin-Film Silver

Template-patterned, flexible transparent electrodes (TEs) formed from an ultrathin silver film on top of a commercial optical adhesive - Norland Optical Adhesive 63 (NOA63) - are reported. NOA63 is shown to be an effective base-layer for ultrathin silver films that advantageously prevents coalescence of vapor-deposited silver atoms into large, isolated islands (Volmer-Weber growth), and so aids the formation of ultrasmooth continuous films. 12 nm silver films on top of free-standing NOA63 combine high, haze-free visible-light transparency (T ≈ 60% at 550 nm) with low sheet-resistance (R s ${\mathcal{R}}_s$ ≈ 16 Ω sq-1), and exhibit excellent resilience to bending, making them attractive candidates for flexible TEs. Etching the NOA63 base-layer with an oxygen plasma before silver deposition causes the silver to laterally segregate into isolated pillars, resulting in a much higher sheet resistance (R s ${\mathcal{R}}_{s}$  > 8 × 106 Ω sq-1) than silver grown on pristine NOA63 . Hence, by selectively etching NOA63 before metal deposition, insulating regions may be defined within an otherwise conducting silver film, resulting in a differentially conductive film that can serve as a patterned TE for flexible devices. Transmittance may be increased (to 79% at 550 nm) by depositing an antireflective layer of Al2O3 on the Ag layer at the cost of reduced flexibility.

Enhanced Durability and Antireflective Performance of Ag-Based Transparent Conductors Achieved via Controlled N-Doping

Ag-based transparent conductors (TCs) are often proposed as an alternative to ITO coatings. However, while their performance has been widely demonstrated, their environmental durability is frequently overlooked or addressed with the use of highly specific encapsulating layers. In this work, the durability and antireflective performance of Ag-based TCs are simultaneously enhanced. To do so, a transfer matrix modeling approach is used to determine the general requirements for high performance antireflective properties as a function of Ag thickness and dielectric refractive indices, offering more widely applicable insight into stack optimization. Coating durability is investigated as a function of the Ag microstructure, which is modified by altering the N2 concentration used for doping of the Ag layer and the selection of the seed layer. Increasing N2 concentration during Ag deposition was found to decrease grain size and durability of Ag coatings deposited on Si3N4 whereas all coatings on ZnO(Al) showed higher stability. Significantly higher durability is found when specifically combining intermediate N2 concentrations in the sputtering gas mixture (Ag(N):5%, compared to 0% and 50%) and a ZnO(Al) seed layer, and a mechanism accounting for this increased durability is proposed. The addition of NiCrNx protective coatings increases the system durability without altering these trends. These findings are combined to fabricate a highly performant Ag-based TC (TV = 89.2%, RVFS = 0.23%, 21.4 Ω), which shows minimal property changes following corrosion testing by immersion in a heated and highly concentrated aqueous NaCl solution (200 g/L, 50 °C).

Pushing the thinness limit of silver films for flexible optoelectronic devices via ion-beam thinning-back process

Reducing the silver film to 10 nm theoretically allows higher transparency but in practice leads to degraded transparency and electrical conductivity because the ultrathin film tends to be discontinuous. Herein, we developed a thinning-back process to address this dilemma, in which silver film is first deposited to a larger thickness with high continuity and then thinned back to a reduced thickness with an ultrasmooth surface, both implemented by a flood ion beam. Contributed by the shallow implantation of silver atoms into the substrate during deposition, the thinness of silver films down to 4.5 nm can be obtained, thinner than ever before. The atomic-level surface smooth permits excellent visible transparency, electrical conductivity, and the lowest haze among all existing transparent conductors. Moreover, the ultrathin silver film exhibits the unique robustness of mechanical flexibility. Therefore, the ion-beam thinning-back process presents a promising solution towards the excellent transparent conductor for flexible optoelectronic devices.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Coaxial Electrohydrodynamic Printing of Microscale Core-Shell Conductive Features for Integrated Fabrication of Flexible Transparent Electronics

Reliable insulation of microscale conductive features is required to fabricate functional multilayer circuits or flexible electronics for providing specific physical/chemical/electrical protection. However, the existing strategies commonly rely on manual assembling processes or multiple microfabrication processes, which is time-consuming and a great challenge for the fabrication of flexible transparent electronics with microscale features and ultrathin thickness. Here, we present a novel coaxial electrohydrodynamic (CEHD) printing strategy for the one-step fabrication of microscale flexible electronics with conductive materials at the core and insulating material at the outer layer. A finite element analysis (FEA) method is established to simulate the CEHD printing process. The extrusion sequence of the conductive and insulating materials during the CEHD printing process shows little effect on the morphology of the core-shell filaments, which can be achieved on different flexible substrates with a minimum conductive line width of 32 ± 3.2 μm, a total thickness of 53.6 ± 4.8 μm, and a conductivity of 0.23 × 107 S/m. The thin insulating layer can provide the inner conductive filament enough protection in 3D, which endows the resultant microscale core-shell electronics with good electrical stability when working in different chemical solvent solutions or under large deformation conditions. Moreover, the presented CEHD printing strategy offers a unique capability to sequentially fabricate an insulating layer, core-shell conductive pattern, and exposed electrodes by simply controlling the material extrusion sequence. The resultant large-area transparent electronics with two-layer core-shell patterns exhibit a high transmittance of 98% and excellent electrothermal performance. The CEHD-printed flexible microelectrode array is successfully used to record the electrical signals of beating mouse hearts. It can also be used to fabricate large-area flexible capacitive sensors to accurately measure the periodical pressure force. We envision that the present CEHD printing strategy can provide a promising tool to fabricate complex three-dimensional electronics with microscale resolution, high flexibility, and multiple functionalities.

Synthesis, Properties, and Application of Ultrathin and Flexible Tellurium Nanorope Films: Beyond Conventional 2D Materials

Nanomaterials that can be easily processed into thin films are highly desirable for their wide range of applicability in electrical and optical devices. Currently, Te-based 2D materials are of interest because of their superior electrical properties compared to transition metal dichalcogenide materials. However, the large-scale manufacturing of these materials is challenging, impeding their commercialization. This paper reports on ultrathin, large-scale, and highly flexible Te and Te-metal nanorope films grown via low-power radiofrequency sputtering for a short period at 25 °C. Additionally, the feasibility of such films as transistor channels and flexible transparent conductive electrodes is discussed. A 20 nm thick Te-Ni-nanorope-channel-based transistor exhibits a high mobility (≈450 cm2 V-1 s-1 ) and on/off ratio (105 ), while 7 nm thick Te-W nanorope electrodes exhibit an extremely low haze (1.7%) and sheet resistance (30 Ω sq-1 ), and high transmittance (86.4%), work function (≈4.9 eV), and flexibility. Blue organic light-emitting diodes with 7 nm Te-W anodes exhibit significantly higher external quantum efficiencies (15.7%), lower turn-on voltages (3.2 V), and higher and more uniform viewing angles than indium-tin-oxide-based devices. The excellent mechanical flexibility and easy coating capability offered by Te nanoropes demonstrate their superiority over conventional nanomaterials and provide an effective outlet for multifunctional devices.

Metallic Micro-Nano Network-Based Soft Transparent Electrodes: Materials, Processes, and Applications

Soft transparent electrodes (TEs) have received tremendous interest from academia and industry due to the rapid development of lightweight, transparent soft electronics. Metallic micro-nano networks (MMNNs) are a class of promising soft TEs that exhibit excellent optical and electrical properties, including low sheet resistance and high optical transmittance, as well as superior mechanical properties such as softness, robustness, and desirable stability. They are genuinely interesting alternatives to conventional conductive metal oxides, which are expensive to fabricate and have limited flexibility on soft surfaces. This review summarizes state-of-the-art research developments in MMNN-based soft TEs in terms of performance specifications, fabrication methods, and application areas. The review describes the implementation of MMNN-based soft TEs in optoelectronics, bioelectronics, tactile sensors, energy storage devices, and other applications. Finally, it presents a perspective on the technical difficulties and potential future possibilities for MMNN-based TE development.

Optical Nanoimaging of Surface Plasmon Polaritons Supported by Ultrathin Metal Films

The physics of electrons, photons, and their plasmonic interactions change dramatically when one or more dimensions are reduced to atomic-level thicknesses. For example, graphene exhibits unique electrical, plasmonic, and optical properties. Likewise, atomic-thick metal films are expected to exhibit extraordinary quantum optical properties. Several methods of growing ultrathin metal films were demonstrated, but the quality of the obtained films was much worse compared to bulk films. In this work, we propose a new method of making ultrathin gold films that are close in their properties to bulk gold films. Excellent plasmonic properties are revealed by directly observing quasi-short- and quasi-long-range plasmons in such a film via scanning near-field optical microscopy. The results pave the way for the use of ultrathin gold films in flexible and transparent nanophotonics and optoelectronic applications.

Light People: Professor Cheng Zhang

EDITORIAL

Nanophotonics has emerged as a cutting-edge interdisciplinary research field today. Its primary objective is to leverage the interaction between light and matter at the wavelength and sub-wavelength scales, with the purpose of designing and manufacturing miniaturized, multifunctional, and high-performance optical devices and systems. Professor Cheng Zhang from Huazhong University of Science and Technology has dedicated his career to nanophotonic device research. His work encompasses a wide range of areas, including plasmonic devices, optical metamaterials, and metasurfaces. Through the design of innovative artificial electromagnetic structures and the exploration of emerging nanofabrication techniques, Professor Cheng Zhang has effectively achieved versatile control over various properties of electromagnetic waves, including amplitude, phase, and polarization states. Furthermore, his research extends to the continuous exploration of novel optical phenomena, aimed at realizing high-performance engineering applications. In this edition of Light People, we will take you deep into the world of Professor Cheng Zhang, a young scientist exemplifying the spirit of innovation, relentless improvement, and unwavering pursuit of excellence. You will discover how he has overcome numerous challenges in the realm of nanophotonic research.

Transparent Electronics for Wearable Electronics Application

Recent advancements in wearable electronics offer seamless integration with the human body for extracting various biophysical and biochemical information for real-time health monitoring, clinical diagnostics, and augmented reality. Enormous efforts have been dedicated to imparting stretchability/flexibility and softness to electronic devices through materials science and structural modifications that enable stable and comfortable integration of these devices with the curvilinear and soft human body. However, the optical properties of these devices are still in the early stages of consideration. By incorporating transparency, visual information from interfacing biological systems can be preserved and utilized for comprehensive clinical diagnosis with image analysis techniques. Additionally, transparency provides optical imperceptibility, alleviating reluctance to wear the device on exposed skin. This review discusses the recent advancement of transparent wearable electronics in a comprehensive way that includes materials, processing, devices, and applications. Materials for transparent wearable electronics are discussed regarding their characteristics, synthesis, and engineering strategies for property enhancements. We also examine bridging techniques for stable integration with the soft human body. Building blocks for wearable electronic systems, including sensors, energy devices, actuators, and displays, are discussed with their mechanisms and performances. Lastly, we summarize the potential applications and conclude with the remaining challenges and prospects.

Enhancing Light Extraction Efficiency in OLED Using Scattering Structure-Embedded DMD-Based Transparent Composite Electrodes

This study investigates the application of scattering structures to the metal layer in a DMD (Dielectric/Metal/Dielectric) configuration through plasma treatment. The purpose is to enhance the light extraction efficiency of organic light-emitting diodes (OLEDs). Different plasma conditions were explored to create scattering structures on the metal layer. The fabricated devices were characterized for their electrical and optical properties. The results demonstrate that the introduction of scattering structures through plasma treatment effectively improves the light extraction efficiency of OLEDs. Specifically, using O2-plasma treatment on the metal layer resulted in significant enhancements in the total transmittance, haze, and figure of merit. These findings suggest that incorporating scattering structures within the DMD configuration can effectively promote light extraction in OLEDs, leading to enhanced overall performance and light efficiency.

Design and Fabrication of an Ag Ultrathin Layer-Based Transparent Band Tunable Conductor and Its Thermal Stability

Transparent conductors (TC) have been widely applied in a wide range of optoelectronic devices. Nevertheless, different transparent spectral bands are always needed for particular applications. In this work, indium tin oxide (ITO)-free TCs with tunable transparent bands based on the film structure of TiO₂/Ag/AZO (Al-doped ZnO) were designed by the transfer matrix method and deposited by magnetron sputtering. The transparent spectra and figure-of-merit (FOM) were effectively adjusted by precisely controlling the Ag layer's thickness. The fabricated as-deposited samples exhibited an average optical transmittance larger than 88.3% (400-700 nm), a sheet resistance lower than 7.7 Ω.sq^-1, a low surface roughness of about 1.4 nm, and mechanical stability upon 1000 bending cycles. Moreover, the samples were able to hold optical and electrical properties after annealing at 300 °C for 60 min, but failed at 400 °C even for 30 min.

Smooth, Chemically Altered Nucleating Platform for Abrupt Performance Enhancement of Ultrathin Cu-Layer-Based Transparent Electrodes

Rapid advances in flexible optoelectronic devices necessitate the concomitant development of high-performance, cost-efficient, and flexible transparent conductive electrodes (TCEs). This Letter reports an abrupt enhancement in the optoelectronic characteristics of ultrathin Cu-layer-based TCEs via Ar⁺-mediated modulation of the chemical and physical states of a ZnO support surface. This approach strongly regulates the growth mode for the subsequently deposited Cu layer, in addition to marked alteration to the ZnO/Cu interface states, resulting in exceptional TCE performance in the form of ZnO/Cu/ZnO TCEs. The resultant Haacke figure of merit (T¹⁰/R_s) of 0.063 Ω^-1, 53% greater than that of the unaltered, otherwise identical structure, corresponds to a record-high value for Cu-layer-based TCEs. Moreover, the enhanced TCE performance in this approach is shown to be highly sustainable under severe simultaneous loadings of electrical, thermal, and mechanical stresses.

Trans-Reflective Structural Color Filters Assisting Multifunctional-Integrated Semitransparent Photovoltaic Window

Multifunction-integrated semitransparent organic photovoltaic cells (STOPVs), with high power generation, colorful transmittance/reflectance, excellent ultraviolet (UV) protection, and thermal insulation, are fully in line with the concept of architectural aesthetics and photoprotection characteristics for building-integrated photovoltaic-window. For the indelible rainbow color photovoltaic window, one crucial issue is to realize the integration of these photons- and photoelectric-related multifunction. Herein, dynamic transmissive and reflective structural color controllable filters, with asymmetrical metal-insulator-metal (MIM) configurations (20 nm-Ag-HATCN-30 nm-Ag) through machine learning, are deliberately designed for colorful STOPV devices. This endows the resultant integrated devices with ≈5% enhanced power conversion efficiency (PCE) than the bare-STOPVs, gifted UV (300-400 nm) blocking rates as high as 93.5, 94.1, 90.2, and 94.5%, as well as a superior infrared radiation (IR) (700-1400 nm) rejection approaching 100% for transparent purple-, blue-, green- and red-STOPV cells, respectively. Most importantly, benefiting from the photonic recycling effect beyond microcavity resonance wavelength, a reported quantum utilization efficiency (QUE) as high as 80%, is first presented for the transparent-green-STOPVs with an ultra-narrow bandgap of 1.2 eV. These asymmetrical Febry-Pérot transmissive and reflective structural color filters can also be extended to silicon- and perovskite-based optoelectric devices and make it possible to integrate additional target optical functions for multi-purpose optoelectric devices.

A Brief Review of Transparent Conducting Oxides (TCO): The Influence of Different Deposition Techniques on the Efficiency of Solar Cells

Global-warming-induced climate changes and socioeconomic issues increasingly stimulate reviews of renewable energy. Among energy-generation devices, solar cells are often considered as renewable sources of energy. Lately, transparent conducting oxides (TCOs) are playing a significant role as back/front contact electrodes in silicon heterojunction solar cells (SHJ SCs). In particular, the optimized Sn-doped In₂O₃ (ITO) has served as a capable TCO material to improve the efficiency of SHJ SCs, due to excellent physicochemical properties such as high transmittance, electrical conductivity, mobility, bandgap, and a low refractive index. The doped-ITO thin films had promising characteristics and helped in promoting the efficiency of SHJ SCs. Further, SHJ technology, together with an interdigitated back contact structure, achieved an outstanding efficiency of 26.7%. The present article discusses the deposition of TCO films by various techniques, parameters affecting TCO properties, characteristics of doped and undoped TCO materials, and their influence on SHJ SC efficiency, based on a review of ongoing research and development activities.

Tuning of Ultra-Thin Gold Films by Photoreduction

Ultrathin metal films (UTMFs) are used in a wide range of applications, from transparent electrodes to infrared mirrors and metasurfaces. Due to their small thickness (<5 nm), the electrical and optical properties of UTMFs can be changed by external stimuli, for example, by applying an electric field through an ion gel. It is also known that oxidized thin films and nanostructures of Au can be reduced by irradiating with short-wavelength light. Here we show that the resistance, reflectance, and resonant optical response of Au UTMFs is changed significantly by ultraviolet light. More specifically, photoreduction and oxidation processes can be sequentially applied for continuous tuning, with observed modulation ranges for sheet resistance (Rs) and reflectance of more than 40% and 30%, respectively. The proposed method has the potential for achieving reconfigurable UTMF structures and trimming their response to specific working points, e.g., a predetermined resonance wavelength and amplitude. This is also important for large scale deployment of such surfaces as one can compensate material nonuniformity, morphological, and structural dimension errors occurring during fabrication.

Flexible and Stretchable Carbon-Based Sensors and Actuators for Soft Robots

In recent years, the emergence of low-dimensional carbon-based materials, such as carbon dots, carbon nanotubes, and graphene, together with the advances in materials science, have greatly enriched the variety of flexible and stretchable electronic devices. Compared with conventional rigid devices, these soft robotic sensors and actuators exhibit remarkable advantages in terms of their biocompatibility, portability, power efficiency, and wearability, thus creating myriad possibilities of novel wearable and implantable tactile sensors, as well as micro-/nano-soft actuation systems. Interestingly, not only are carbon-based materials ideal constituents for photodetectors, gas, thermal, triboelectric sensors due to their geometry and extraordinary sensitivity to various external stimuli, but they also provide significantly more precise manipulation of the actuators than conventional centimeter-scale pneumatic and hydraulic robotic actuators, at a molecular level. In this review, we summarize recent progress on state-of-the-art flexible and stretchable carbon-based sensors and actuators that have creatively added to the development of biomedicine, nanoscience, materials science, as well as soft robotics. In the end, we propose the future potential of carbon-based materials for biomedical and soft robotic applications.

Analysis of the Effect of Graphene, Metal, and Metal Oxide Transparent Electrodes on the Performance of Organic Optoelectronic Devices

Transparent electrodes (TEs) are important components in organic optoelectronic devices. ITO is the mostly applied TE material, which is costly and inferior in mechanical performance, and could not satisfy the versatile need for the next generation of transparent optoelectronic devices. Recently, many new TE materials emerged to try to overcome the deficiency of ITO, including graphene, ultrathin metal, and oxide-metal-oxide structure. By finely control of the fabrication techniques, the main properties of conductivity, transmittance, and mechanical stability, have been studied in the literatures, and their applicability in the potential optoelectronic devices has been reported. Herein, in this work, we summarized the recent progress of the TE materials applied in optoelectronic devices by focusing on the fabrication, properties, such as Graphene, ultra-thin metal film, and metal oxide and performance. The advantages and insufficiencies of these materials as TEs have been summarized and the future development aspects have been pointed out to guide the design and fabrication TE materials in the next generation of transparent optoelectronic devices.

A Review on the Materials Science and Device Physics of Semitransparent Organic Photovoltaics

In this review, the current state of materials science and the device physics of semitransparent organic solar cells is summarized. Relevant synthetic strategies to narrow the band gap of organic semiconducting molecules are outlined, and recent developments in the polymer donor and near-infrared absorbing acceptor materials are discussed. Next, an overview of transparent electrodes is given, including oxides, multi-stacks, thin metal, and solution processed electrodes, as well as considerations that are unique to ST-OPVs. The remainder of this review focuses on the device engineering of ST-OPVs. The figures of merit and the theoretical limitations of ST-OPVs are covered, as well as strategies to improve the light utilization efficiency. Lastly, the importance of creating an in-depth understanding of the device physics of ST-OPVs is emphasized and the existing works that answer fundamental questions about the inherent changes in the optoelectronic processes in transparent devices are presented in a condensed way. This last part outlines the changes that are unique for devices with increased transparency and the resulting implications, serving as a point of reference for the systematic development of next-generation ST-OPVs.

Solar Energy Storage in an All-Vanadium Photoelectrochemical Cell: Structural Effect of Titania Nanocatalyst in Photoanode

Solar energy storage in the form of chemical energy is considered a promising alternative for solar energy utilization. High-performance solar energy conversion and storage significantly rely on the sufficient active surface area and the efficient transport of both reactants and charge carriers. Herein, the structure evolution of titania nanotube photocatalyst during the photoanode fabrication and its effect on photoelectrochemical activity in a microfluidic all-vanadium photoelectrochemical cell was investigated. Experimental results have shown that there exist opposite variation trends for the pore structure and crystallinity of the photocatalyst. With the increase in calcination temperature, the active surface area and pore volume were gradually declined while the crystallinity was significantly improved. The trade-off between the gradually deteriorated sintering and optimized crystallinity of the photocatalyst then determined the photoelectrochemical reaction efficiency. The optimal average photocurrent density and vanadium ions conversion rate emerged at an appropriate calcination temperature, where both the plentiful pores and large active surface area, as well as good crystallinity, could be ensured to promote the photoelectrochemical activity. This work reveals the structure evolution of the nanostructured photocatalyst in influencing the solar energy conversion and storage, which is useful for the structural design of the photoelectrodes in real applications.

Functional optical design of thickness-optimized transparent conductive dielectric-metal-dielectric plasmonic structure

Dielectric/metal/dielectric plasmonic transparent structures play an important role in tailoring the high-optical performance of various optoelectronic devices. Though these structures are in significant demand in applications, including modification of the optical properties, average visible transmittance (AVT) and colour render index (CRI) and correlated colour temperature (CCT), obtaining optimal ones require precise thickness optimization. The overall objective of this study is the estimation of the optimal design concept of MoO₃/Ag/WO₃ (10/d_Ag/d_WO3 nm) plasmonic structure. To explore the proper use in optoelectronic devices, we are motivated to conduct a rigorous optical evaluation on the thickness of layers. Having calculated optical characteristics and achieved the highest AVT of 97.3% for d_Ag = 4 nm and d_WO3 = 6 nm by the transfer matrix method, it is quite possible to offer the potential of the structure acting as a transparent contact. Notably, the colour coordinates of the structure are x = 0.3110 and y = 0.3271, namely, it attributes very close to the Planckian locus. This superior colour performance displays that MoO₃/Ag/WO₃ shall undergo rapid development in neutral-colour windows and LED technologies. Structure with d_Ag = 6 nm and d_WO3 = 16 nm exhibits the highest CRI of 98.58, thus identifying an optimal structure that can be integrated into LED lighting applications and imaging technologies. Besides the colour of structure with d_Ag = 4 nm and d_WO3 = 8 nm is equal for D65 Standard Illuminant, the study reports that the range of CCTs are between 5000 and 6500 K. This optimization makes the structure employable as a near-daylight broadband illuminant. The study emphasizes that optimal MoO₃/Ag/WO₃ plasmonic structures can be used effectively to boost optoelectronic devices' performance.

Nanosphere Lithography: A Versatile Approach to Develop Transparent Conductive Films for Optoelectronic Applications

Transparent conductive films (TCFs) are irreplaceable components in most optoelectronic applications such as solar cells, organic light-emitting diodes, sensors, smart windows, and bioelectronics. The shortcomings of existing traditional transparent conductors demand the development of new material systems that are both transparent and electrically conductive, with variable functionality to meet the requirements of new generation optoelectronic devices. In this respect, TCFs with periodic or irregular nanomesh structures have recently emerged as promising candidates, which possess superior mechanical properties in comparison with conventional metal oxide TCFs. Among the methods for nanomesh TCFs fabrication, nanosphere lithography (NSL) has proven to be a versatile platform, with which a wide range of morphologically distinct nanomesh TCFs have been demonstrated. These materials are not only functionally diverse, but also have advantages in terms of device compatibility. This review provides a comprehensive description of the NSL process and its most relevant derivatives to fabricate nanomesh TCFs. The structure-property relationships of these materials are elaborated and an overview of their application in different technologies across disciplines related to optoelectronics is given. It is concluded with a perspective on current shortcomings and future directions to further advance the field.

Advances in Flexible Metallic Transparent Electrodes

Transparent electrodes (TEs) are pivotal components in many modern devices such as solar cells, light-emitting diodes, touch screens, wearable electronic devices, smart windows, and transparent heaters. Recently, the high demand for flexibility and low cost in TEs requires a new class of transparent conductive materials (TCMs), serving as substitutes for the conventional indium tin oxide (ITO). So far, ITO has been the most used TCM despite its brittleness and high cost. Among the different emerging alternative materials to ITO, metallic nanomaterials have received much interest due to their remarkable optical-electrical properties, low cost, ease of manufacturing, flexibility, and widespread applicability. These involve metal grids, thin oxide/metal/oxide multilayers, metal nanowire percolating networks, or nanocomposites based on metallic nanostructures. In this review, a comparison between TCMs based on metallic nanomaterials and other TCM technologies is discussed. Next, the different types of metal-based TCMs developed so far and the fabrication technologies used are presented. Then, the challenges that these TCMs face toward integration in functional devices are discussed. Finally, the various fields in which metal-based TCMs have been successfully applied, as well as emerging and potential applications, are summarized.

Ultrathin TiN Epitaxial Films as Transparent Conductive Electrodes

Titanium nitride (TiN), a transition-metal compound with tight covalent Ti-N bonding, has a high melting temperature and superior mechanical and chemical stabilities compared to noble metals. With a reduction in thickness, the optical transmittance of TiN films can be drastically increased, and in combination with its excellent electrical conductivity, the ultrathin and continuous TiN film can be considered as an ideal alternative of the metal oxide electrodes. However, the deposition of ultrathin and continuous metallic layer with a smooth surface morphology is a major challenge for typical deposition methods such as thermal evaporation or reactive sputtering. In particular, defects mainly related with oxygen contents and surface scattering can significantly limit the performance of ultrathin TiN films. In this work, ultrathin TiN films with 2-10 nm in thickness are grown by using the nitrogen plasma-assisted molecular-beam epitaxy (MBE) method in an ultrahigh vacuum environment. Excellent surface morphology with a root-mean-square roughness of ≤0.12 nm and a high optical transparency of 75% over the whole visible regime are achieved for ultrathin TiN epitaxial films. The dielectric properties determined by the spectroscopic ellipsometry and the electrical properties measured by the terahertz spectroscopy and the Hall effect method reveal that the percolation thickness of the TiN epitaxial film is less than 2.4 nm and its electrical conductivity is higher than 1.1 × 10⁴ Ω^-1 cm^-1. These features make MBE-grown ultrathin TiN epitaxial films a good candidate for robust, low cost, and large-area transparent conductive electrodes.

Simultaneous Enhancement in Visible Transparency and Electrical Conductivity via the Physicochemical Alterations of Ultrathin-Silver-Film-Based Transparent Electrodes

A methodology for the simultaneous modulation of the chemical and physical states of an amorphous TiO_x layer surface and its impact on the subsequent deposition of a polycrystalline Ag layer are presented. The smoothened TiO_x layer surface comprising chemically altered, oxygen-deficient states serves as a nucleating platform for Ag deposition, facilitating a marked increase (∼75%) in the nucleation number density, which strongly enhances the wettability of ultrathin Ag layers. The physically smoothened TiO_x/Ag interface further reduces the optical and electrical losses. When the proposed methodology is applied to TiO_x/Ag/ZnO transparent conductive electrodes (TCEs), exceptional TCE properties are yielded owing to the simultaneous improvement in visible transparency and electrical conductivity; specifically, a record-high 0.22 Ω^-1 Haacke figure of merit is realized. TCEs are prepared on flexible substrates to verify their applicability as stand-alone flexible transparent heaters and as integrated heaters within electrochromic devices to enhance color-switching reactions.

Bioinspired Toughening Mechanisms in a Multilayer Transparent Conductor Structure

With increasing demands and interest in flexible and foldable devices, much effort has been devoted to the development of flexible transparent electrodes. An in-depth understanding of failure mechanisms in nanoscale structure is crucial in developing stable, flexible electronics with long-term durability. The present work investigated the mechanoelectric characteristics of transparent conductive electrodes in the form of dielectric/metal/dielectric (DMD) sandwich structures under bending, including one time and repeated cyclic bending test, and provides an explanation of their failure mechanism. We demonstrate how a thin metallic layer helps to enhance the mechanical robustness of the DMD as compared with that without, tune the mechanical properties of the cohesive layer, and improve the electrode fracture resistance. Abnormal crack propagation and toughening of multilayer DMD structures are analyzed, and its underlying mechanisms are explained. We consider the knowledge of the failure mechanisms of transparent conductive electrodes gained from the present study as a foundation for future design improvements.

Bright Mid-Wave Infrared Resonant-Cavity Light-Emitting Diodes Based on Black Phosphorus

The mid-wave infrared (MWIR) wavelength range plays a central role in a variety of applications, including optical gas sensing, industrial process control, spectroscopy, and infrared (IR) countermeasures. Among the MWIR light sources, light-emitting diodes (LEDs) have the advantages of simple design, room-temperature operation, and low cost. Owing to the low Auger recombination at high carrier densities and direct bandgap of black phosphorus (bP), it can serve as a high quantum efficiency emitting layer in LEDs. In this work, we demonstrate bP-LEDs exhibiting high external quantum efficiencies and wall-plug efficiencies of up to 4.43 and 1.78%, respectively. This is achieved by integrating the device with an Al₂O₃/Au optical cavity, which enhances the emission efficiency, and a thin transparent conducing oxide [indium tin oxide (ITO)] layer, which reduces the parasitic resistance, both resulting in order of magnitude improvements to performance.

Flexible CdSe/ZnS Quantum-Dot Light-Emitting Diodes with Higher Efficiency than Rigid Devices

Fabrication of high-performance, flexible quantum-dot light-emitting diodes (QLEDs) requires the reliable manufacture of a flexible transparent electrode to replace the conventional brittle indium tin oxide (ITO) transparent electrode, along with flexible substrate planarization. We deposited a transparent oxide/metal/oxide (OMO) electrode on a polymer planarization layer and co-optimized both layers. The visible transmittance of the OMO electrode on a polyethylene terephthalate substrate increased markedly. Good electron supply and injection into an electron-transporting layer were achieved using WOX/Ag/ WOX and MoOx/Ag/MoOX OMO electrodes. High-performance flexible QLEDs were fabricated from these electrodes; a QLED with a MoOX/Ag/ MoOX cathode and an SU-8 planarization layer had a current efficiency of 30.3 cd/A and luminance more than 7 × 104 cd/m2. The current efficiency was significantly higher than that of a rigid QLED with an ITO cathode and was higher than current efficiency values obtained from previously reported QLEDs that utilized the same quantum-dot and electron-transporting layer materials as our study.

Morphology, Electrical and Optical Properties of Cu Nanostructures Embedded in AZO: A Comparison between Dry and Wet Methods

Herein, Cu nanostructures are obtained by solid-state dewetting of 9 nm copper layer (dry) or by ablating copper target, using a nanosecond pulsed laser at 1064 nm, in acetone and isopropyl alcohol (wet). The Cu nanostructures are embedded in aluminum-doped zinc oxide layer. Then, the electrical, optical, and morphological properties of the two kinds of systems, as a function of their synthesis parameters, are investigated. The aim is to compare the two fabrication methods and select the main conditions to achieve the best system for photovoltaic applications. The main differences, exhibited by the wet and dry processes, were in the shape and size of the Cu nanostructures. Dewetting in nitrogen produces faceted nanoparticles, with an average size below 150 nm, while laser ablation originates spherical and smaller nanoparticles, below 50 nm. Dry system underwent to thermal annealing, which improves the electrical properties, compared to the wet system, with a sheet resistance of 10³ vs. 10⁶ Ω/sq, respectively; finally, the dry system shows a maximum transmittance of 89.7% at 697 nm, compared to the wet system in acetone, 88.4% at 647 nm, as well as in isopropyl alcohol, 86.9% at 686 nm. Moreover, wet systems show higher transmittance in NUV.

Aluminum Doping Effect on Surface Structure of Silver Ultrathin Films

Ultrathin silver films with low loss in the visible and near-infrared spectrum range have been widely used in the fields of metamaterials and optoelectronics. In this study, Al-doped silver films were prepared by the magnetron sputtering method and were characterized by surface morphology, electrical conductivity, and light transmittance analyses. Molecular dynamics simulations and first-principles density functional theory calculations were applied to study the surface morphologies and migration pathway for the formation mechanisms in Al-doped silver films. The results indicate that the migration barrier of silver on a pristine silver surface is commonly lower than that of an Al-doped surface, revealing that the aluminum atoms in the doping site decrease the surface mobility and are conducive to the formation of small islands of silver. When the islands are dense, they coalesce into a single layer, leading to a smoother surface. This might be the reason for the observably lower 3D growth mode of silver on an Al-doped silver surface. Our results with electronic structure insights on the mechanism of the Al dopants on surface morphologies might benefit the quality control of the silver thin films.

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al₂O₃ layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.

Broad-Spectrum Ultrathin-Metal-Based Oxide/Metal/Oxide Transparent Conductive Films for Optoelectronic Devices

High-quality transparent conductive materials are beneficial to improve the charge transfer and light transmittance and reduce the interface defects as well as the production cost of optoelectronic devices. A high threshold thickness of metal layer in oxide/metal/oxide (OMO) compound thin films leads to strong reflectance, especially in the near-infrared region, limiting the broad-spectrum device applications. Here, we propose a novel Zn doping strategy using the low-cost single-target sputtering technology to achieve the growth of Ag-Zn thin films (i.e., Zn-doped Ag) and introduce a trace amount of O₂ to further obtain ultrathin Ag-Zn(O) films (thin-film thickness d ≤ 5 nm), which greatly improves the broad-spectrum characteristics of OMO films. Heterogeneous metal and gas doping technology effectively promotes the formation of two-dimensional continuous film growth. By combining the ultrathin Ag-Zn(O) layer with the MGZO (i.e., Mg- and Ga co-doped ZnO) oxide film grown by reactive plasma deposition, a typical broad-spectrum MGZO/Ag-Zn(O)/MGZO (50/5/50 nm)-OMO compound thin film exhibits an average transmittance of 91.6% in the wavelength range of 400-1200 nm and low sheet resistance. The broad-spectrum organic solar cells based on MGZO/Ag-Zn(O)/MGZO electrodes present a high power conversion efficiency of 15.35%, superior to those devices based on single-layer oxide electrodes. The distinguished performances are attributed to the ultrathin Ag-Zn(O) films in OMO, paving the way for applications in broad-spectrum optoelectronic and flexible electronic devices.

Flexible and Stable Carbon Nanotube Film Strain Sensors with Self-Derived Integrated Electrodes

The development of flexible and wearable electronic devices has put an increasing demand on electrode systems with seamless connection and high compatibility with the main device, in order to accommodate complex deformation conditions and maintain stable performance. Here, we present a carbon nanotube-integrated electrode (CNTIE) by wet-pulling the ends of a carbon nanotube (CNT) film to form condensed thin fibers that resemble conventional conducting wire electrodes. A flexible strain sensor was constructed consisting of the middle CNT film as the main functional part and the CNTIE as self-derived electrodes, with inherent CNT connection between the two parts. The sensor can be transferred to versatile substrates (e.g., balloon surface) or encapsulated in thermoplastic polymers, exhibiting a large linear response range (up to 1000% in tensile strain), excellent durability and repeatability over 5000 cycles, and the ability to detect small- to large-degree human body motions. In addition, the strain sensor based on the CNTIE hybrid film (MXene/CNT and graphene/CNT) also shows superior linearity and stability at a strain range of 0-800%. Compared with the sensors using traditional silver wire electrodes and separately fabricated CNT fiber electrodes, our CNTIE plays an important role in achieving highly stable performance in the strain cycles. Our self-derived integrated electrodes provide a potential route to solve the incompatibility issues of conventional electrodes and to develop high-performance flexible and wearable systems based on CNTs and other nanomaterials.

Dopant-Tunable Ultrathin Transparent Conductive Oxides for Efficient Energy Conversion Devices

Ultrathin film-based transparent conductive oxides (TCOs) with a broad work function (WF) tunability are highly demanded for efficient energy conversion devices. However, reducing the film thickness below 50 nm is limited due to rapidly increasing resistance; furthermore, introducing dopants into TCOs such as indium tin oxide (ITO) to reduce the resistance decreases the transparency due to a trade-off between the two quantities. Herein, we demonstrate dopant-tunable ultrathin (≤ 50 nm) TCOs fabricated via electric field-driven metal implantation (m-TCOs; m = Ni, Ag, and Cu) without compromising their innate electrical and optical properties. The m-TCOs exhibit a broad WF variation (0.97 eV), high transmittance in the UV to visible range (89-93% at 365 nm), and low sheet resistance (30-60 Ω cm^-2). Experimental and theoretical analyses show that interstitial metal atoms mainly affect the change in the WF without substantial losses in optical transparency. The m-ITOs are employed as anode or cathode electrodes for organic light-emitting diodes (LEDs), inorganic UV LEDs, and organic photovoltaics for their universal use, leading to outstanding performances, even without hole injection layer for OLED through the WF-tailored Ni-ITO. These results verify the proposed m-TCOs enable effective carrier transport and light extraction beyond the limits of traditional TCOs.

Ultrathin Metals on a Transparent Seed and Application to Infrared Reflectors

Ultrathin metal films (UTMFs) are widely used in optoelectronic applications, from transparent conductors to photovoltaic cells, low emissivity windows, and plasmonic metasurfaces. During the initial deposition phase, many metals tend to form islands on the receiving substrate rather than a physically connected (percolated) network, which eventually evolves into continuous films as the thickness increases. For example, in the case of Ag and Au on dielectric surfaces, percolation begins when the thickness of the metal film is at least about 5 nm. It is known that the type of growth can be changed when a proper seed layer is used. Here, we show that a CuO layer directly deposited on a substrate can dramatically influence surface wetting and promote early percolation of polycrystalline Ag and Au UTMFs. We demonstrate that the proposed seed is effective even when its thickness is sub-nanometric, in this way maintaining the full transparency of the receiving substrate. The Ag and Au films seeded with CuO showed a percolation thickness close to 1 nm and were morphologically and optically characterized from an ultraviolet (λ = 300 nm) to a midinfrared (λ = 15 μm) wavelength. Infrared reflectors, a mirror and a resonant plasmonic structure, were also demonstrated and uniquely tuned by electrical gating, this being possible owing to the small thickness of the constituting Au UTMF.

Recent progress in post treatment of silver nanowire electrodes for optoelectronic device applications

Owing to the economical and practical solution synthesis and coating strategies, silver nanowires (AgNWs) have been considered as one of the most suitable alternative materials to replace commercial indium tin oxide (ITO) transparent electrodes. The primitive AgNW electrode cannot meet the requirements for preparing high performance optoelectronic devices due to its high contact resistance, large surface roughness and poor stability. Thus, various post-treatments for AgNW film optimization are needed before its actual applications, such as welding treatment to decrease contact resistance and passivation to increase film stability. This review investigates recent progress on the preparation and optimization of AgNWs. Moreover, some unique fabrication strategies to produce highly oriented AgNW films with unique anisotropic properties have also been carried out with detailed analysis. The representative devices based on the AgNW electrode have been summarized and discussed at the end of this review.

Research Progress of Transparent Electrode Materials with Sandwich Structure

The nonrenewable nature of fossil energy has led to a gradual decrease in reserves. Meanwhile, as society becomes increasingly aware of the severe pollution caused by fossil energy, the demand for clean energy, such as solar energy, is rising. Moreover, in recent years, electronic devices with screens, such as mobile phones and computers, have had increasingly higher requirements for light transmittance. Whether in solar cells or in the display elements of electronic devices, transparent conductive films directly affect the performance of these devices as a cover layer. In this context, the development of transparent electrodes with low sheet resistance and high light transmittance has become one of the most urgent issues in related fields. At the same time, conventional electrodes can no longer meet the needs of some of the current flexible devices. Because of the high sheet resistance, poor light transmittance, and poor bending stability of the conventional tin-doped indium tin oxide conductive film and fluorine-doped tin oxide transparent conductive glass, there is a need to find alternatives with better performance. In this article, the progress of research on transparent electrode materials with sandwich structures and their advantages is reviewed according to the classification of conductive materials to provide reference for research in related fields.

Ultrathin Diamond Nanofilms-Development, Challenges, and Applications

Diamond is a highly attractive material for ample applications in material science, engineering, chemistry, and biology because of its favorable properties. The advent of conductive diamond coatings and the steady demand for miniaturization in a plethora of economic and scientific fields resulted in the impetus for interdisciplinary research to develop intricate deposition techniques for thin (≤1000 nm) and ultra-thin (≤100 nm) diamond films on non-diamond substrates. By virtue of the lowered thickness, diamond coatings feature high optical transparency in UV-IR range. Combined with their semi-conductivity and mechanical robustness, they are promising candidates for solar cells, optical devices, transparent electrodes, and photochemical applications. In this review, the difficulty of (ultra-thin) diamond film development and production, introduction of important stepping stones for thin diamond synthesis, and summarization of the main nucleation procedures for diamond film synthesis are elucidated. Thereafter, applications of thin diamond coatings are highlighted with a focus on applications relying on ultrathin diamond coatings, and the excellent properties of the diamond exploited in said applications are discussed, thus guiding the reader and enabling the reader to quickly get acquainted with the research field of ultrathin diamond coatings.

Design and fabrication of a semi-transparent solar cell considering the effect of the layer thickness of MoO3/Ag/MoO3 transparent top contact on optical and electrical properties

We conducted the present study to design and manufacture a semi-transparent organic solar cell (ST-OSC). First, we formed a transparent top contact as MoO3/Ag/MoO3 in a dielectric/metal/dielectric (DMD) structure. We performed the production of an FTO/ZnO/P3HT:PCBM/MoO3/Ag/MoO3 ST-OSC by integrating MoO3/Ag/MoO3 (10/[Formula: see text]/[Formula: see text] nm) instead of an Ag electrode in an opaque FTO/ZnO/P3HT:PCBM/MoO3/Ag (-/40/130/10/100 nm) OSC, after theoretically achieving optimal values of optical and electrical parameters depending on Ag layer thickness. The transparency decreased with the increase of [Formula: see text] values for current DMD. Meanwhile, maximum transmittance and average visible transmittance (AVT) indicated the maximum values of over 92% for [Formula: see text] = 4 and 8 nm, respectively. For ST-OSCs, the absorption and reflectance increased in the visible region by a wavelength of longer than 560 nm and in the whole near-infrared region by increasing [Formula: see text] up to 16 nm. Moreover, in the CIE chromaticity diagram, we reported a shift towards the D65 Planckian locus for colour coordinates of current ST-OSCs. Electrical analysis indicated the photogenerated current density and AVT values for [Formula: see text] nm as 63.30 mA/cm2 and 38.52%, respectively. Thus, the theoretical and experimental comparison of optical and electrical characteristics confirmed that the manufactured structure is potentially conducive for a high-performance ST-OSC.

Recent Developments in Flexible Transparent Electrode

With the rapid development of flexible electronic devices (especially flexible LCD/OLED), flexible transparent electrodes (FTEs) with high light transmittance, high electrical conductivity, and excellent stretchability have attracted extensive attention from researchers and businesses. FTEs serve as an important part of display devices (touch screen and display), energy storage devices (solar cells and super capacitors), and wearable medical devices (electronic skin). In this paper, we review the recent progress in the field of FTEs, with special emphasis on metal materials, carbon-based materials, conductive polymers (CPs), and composite materials, which are good alternatives to the traditional commercial transparent electrode (i.e., indium tin oxide, ITO). With respect to production methods, this article provides a detailed discussion on the performance differences and practical applications of different materials. Furthermore, major challenges and future developments of FTEs are also discussed.

Templateless, Plating-Free Fabrication of Flexible Transparent Electrodes with Embedded Silver Mesh by Electric-Field-Driven Microscale 3D Printing and Hybrid Hot Embossing

Flexible transparent electrodes (FTEs) with an embedded metal mesh are considered a promising alternative to traditional indium tin oxide (ITO) due to their excellent photoelectric performance, surface roughness, and mechanical and environmental stability. However, great challenges remain for achieving simple, cost-effective, and environmentally friendly manufacturing of high-performance FTEs with embedded metal mesh. Herein, a maskless, templateless, and plating-free fabrication technique is proposed for FTEs with embedded silver mesh by combining an electric-field-driven (EFD) microscale 3D printing technique and a newly developed hybrid hot-embossing process. The final fabricated FTE exhibits superior optoelectronic properties with a transmittance of 85.79%, a sheet resistance of 0.75 Ω sq^-1 , a smooth surface of silver mesh (R_a  ≈ 18.8 nm) without any polishing treatment, and remarkable mechanical stability and environmental adaptability with a negligible increase in sheet resistance under diverse cyclic tests and harsh working conditions (1000 bending cycles, 80 adhesion tests, 120 scratch tests, 100 min ultrasonic test, and 72 h chemical attack). The practical viability of this FTE is successfully demonstrated with a flexible transparent heater applied to deicing. The technique proposed offers a promising fabrication strategy with a cost-effective and environmentally friendly process for high-performance FTE.