Light phase detection with on-chip petahertz electronic networks

Lightwave-electronic harmonic frequency mixing

Electronic frequency mixers are fundamental building blocks of electronic systems. Harmonic frequency mixing in particular enables broadband electromagnetic signal analysis across octaves of spectrum using a single local oscillator. However, conventional harmonic frequency mixers do not operate beyond hundreds of gigahertz to a few terahertz. If extended to the petahertz scale in a compact and scalable form, harmonic mixers would enable field-resolved optical signal analysis spanning octaves of spectra in a monolithic device without the need for frequency conversion using nonlinear crystals. Here, we demonstrate lightwave-electronic harmonic frequency mixing beyond 0.350 PHz using plasmonic nanoantennas. We demonstrate that the mixing process enables complete, field-resolved detection of spectral content far outside that of the local oscillator, greatly extending the range of detectable frequencies compared to conventional heterodyning techniques. Our work has important implications for applications where optical signals of interest exhibit coherent femtosecond-scale dynamics spanning multiple harmonics.

Gouy phase effects on photocurrents in plasmonic nanogaps driven by single-cycle pulses

The investigation of optical phenomena in the strong-field regime requires few-cycle laser pulses at field strengths exceeding gigavolts per meter (GV/m). Surprisingly, such conditions can be reached by tightly focusing pJ-level pulses with nearly octave spanning optical bandwidth onto plasmonic nanostructures, exploiting the field-enhancement effect. In this situation, the Gouy phase of the focused beam can deviate significantly from the monochromatic scenario. Here, we study the effect of the Gouy phase of a pulse exploited to drive coherent strong-field photocurrents within a plasmonic gap nanoantenna. While the influence of the specific Gouy phase profile in the experiment approaches the monochromatic case closely, this scheme may be utilized to identify more intricate phase profiles at sub-diffraction scale. Our results pave the way for Gouy phase engineering at picojoule (pJ) pulse energy levels, enabling the optimization of strong-field optical phenomena.

Real-time tracking of coherent oscillations of electrons in a nanodevice by photo-assisted tunnelling

Coherent collective oscillations of electrons excited in metallic nanostructures (localized surface plasmons) can confine incident light to atomic scales and enable strong light-matter interactions, which depend nonlinearly on the local field. Direct sampling of such collective electron oscillations in real-time is crucial to performing petahertz scale optical modulation, control, and readout in a quantum nanodevice. Here, we demonstrate real-time tracking of collective electron oscillations in an Au bowtie nanoantenna, by recording photo-assisted tunnelling currents generated by such oscillations in this quantum nanodevice. The collective electron oscillations show a noninstantaneous response to the driving laser fields with a T2 decay time of nearly 8 femtoseconds. The contributions of linear and nonlinear electron oscillations in the generated tunnelling currents were precisely determined. A phase control of electron oscillations in the nanodevice is illustrated. Functioning in ambient conditions, the excitation, phase control, and read-out of coherent electron oscillations pave the way toward on-chip light-wave electronics in quantum nanodevices.

Single-shot, high-repetition rate carrier-envelope-phase detection of ultrashort laser pulses

We propose a single-shot, high-repetition rate measurement scheme of the carrier-envelope phase offset of ultrashort laser pulses. The spectral fringes resulting from f-2f nonlinear interferometry, encoding the carrier-envelope-phase, are evaluated completely optically via an optical Fourier transform. For demonstration, the carrier-envelope-phase of a 200 kHz, few-cycle optical parametric chirped-pulse amplification (OPCPA) laser system was measured employing an interferometer as a periodic optical filter. The proposed method shows excellent agreement with simultaneous measurement of the spectral fringes by a fast line-scan camera.

Carrier-envelope phase on-chip scanner and control of laser beams

The carrier-envelope phase (CEP) is an important property of few-cycle laser pulses, allowing for light field control of electronic processes during laser-matter interactions. Thus, the measurement and control of CEP is essential for applications of few-cycle lasers. Currently, there is no robust method for measuring the non-trivial spatial CEP distribution of few-cycle laser pulses. Here, we demonstrate a compact on-chip, ambient-air, CEP scanning probe with 0.1 µm3 resolution based on optical driving of CEP-sensitive ultrafast currents in a metal-dielectric heterostructure. We successfully apply the probe to obtain a 3D map of spatial changes of CEP in the vicinity of an oscillator beam focus with pulses as weak as 1 nJ. We also demonstrate CEP control in the focal volume with a spatial light modulator so that arbitrary spatial CEP sculpting could be realized.

Light-field-driven electronics in the mid-infrared regime: Schottky rectification

The speed of an active electronic semiconductor device is limited by RC timescale, i.e., the time required for its charging and discharging. To circumvent this ubiquitous limitation of conventional electronics, we investigate diodes under intense mid-infrared light-field pulses. We choose epitaxial graphene on silicon carbide as a metal/semiconductor pair, acting as an ultrarobust and almost-transparent Schottky diode. The usually dominant forward direction is suppressed, but a characteristic signal occurs in reverse bias. For its theoretical description, we consider tunneling through the light-field-modulated Schottky barrier, complemented by a dynamical accumulation correction. On the basis only of the DC parametrization of the diode, the model provides a consistent and accurate description of the experimentally observed infrared phenomena. This allows the conclusion that cycle-by-cycle dynamics determines rectification. As the chosen materials have proven capabilities for transistors, circuits, and even a full logic, we see a way to establish light-field-driven electronics with rapidly increasing functionality.

Laser-Driven Petahertz Electron Ratchet Nanobubbles

A laser-driven quantum electron ratchet nanodevice is proposed. The ratchet consists of a series of disconnected bubble-shaped nanodiode structures with a sharp tip to induce a large field enhancement. A laser pulse is used to create a plasmon oscillation in the vertical direction, and the shape of the bubble funnels the electrons toward the sharp tip leading to net electron transport in the horizontal direction. The electron current carries the fingerprint of the driving laser field. The system is modeled by using the time-dependent orbital free density functional theory with nanostructures containing thousands of atoms.

Optical-Field-Driven Electron Tunneling in Metal-Insulator-Metal Nanojunction

Optical-field driven electron tunneling in nanojunctions has made demonstrable progress toward the development of ultrafast charge transport devices at subfemtosecond time scales, and have evidenced great potential as a springboard technology for the next generation of on-chip "lightwave electronics." Here, the empirical findings on photocurrent the high nonlinearity in metal-insulator-metal (MIM) nanojunctions driven by ultrafast optical pulses in the strong optical-field regime are reported. In the present MIM device, a 14th power-law scaling is identified, never achieved before in any known solid-state device. This work lays important technological foundations for the development of a new generation of ultracompact and ultrafast electronics devices that operate with suboptical-cycle response times.

Nanoscale refractory doped titanium nitride field emitters

Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities. Recent results have demonstrated that the optical properties of titanium nitride, a refractory and CMOS-compatible plasmonic material, can be tuned by adding silicon and oxygen dopants. However, to fully leverage the potential of titanium (silicon oxy)nitride, a reliable and scalable fabrication process with few-nm precision is needed. In this work, we developed a fabrication process for producing engineered nanostructures with gaps between 10 and 15 nm, aspect ratios larger than 5 with almost 90° steep sidewalls. Using this process, we fabricated large-scale arrays of electrically-connected bow-tie nanoantennas with few-nm free-space gaps. We measured a typical variation of 4 nm in the average gap size. Using applied DC voltages and optical illumination, we tested the electronic and optoelectronic response of the devices, demonstrating sub-10 V tunneling operation across the free-space gaps, and quantum efficiency of up to 1 × 10^-3at 1.2μm, which is comparable to a bulk silicon photodiode at the same wavelength and three orders of magnitude higher than with nearly identical gold devices. Tests demonstrated that the titanium silicon oxynitride nanostructures did not significantly degrade, exhibiting less than 5 nm of shrinking of the average gap dimensions over few-μm²areas after 10 h of operation. Our results will be useful for developing the next generation of robust and CMOS-compatible nanoscale devices for high-speed and low-power field-emission electronics and optoelectronics applications.