T-square resistivity without Umklapp scattering in dilute metallic Bi2O2Se

Anomalous Frequency and Temperature Dependent Scattering in the Dilute Metallic Phase in Lightly Doped SrTiO_{3}

The mechanism of superconductivity in materials with aborted ferroelectricity and its emergence out of a dilute metallic phase in systems like doped SrTiO_{3} is an outstanding issue in condensed matter physics. This dilute metal has anomalous properties that are both similar and different to those found in the normal state of other unconventional superconductors. For instance, T^{2} resistivity can be found at densities that are too small to allow current decay through electron-electron scattering. We have investigated the optical properties of the dilute metallic phase in doped SrTiO_{3} using THz time-domain spectroscopy. At low frequencies the THz response exhibits a Drude-like form as expected for typical metal-like conductivity. We observed the frequency and temperature dependencies to the low energy scattering rate Γ(ω,T)∝(ℏω)^{2}+(pπk_{B}T)^{2} expected in a conventional Fermi liquid. However, we find the lowest known p values of 0.39-0.72. As p is 2 in a canonical Fermi liquid and existing models based on energy dependent elastic scattering bound p from below to 1, our observation lies outside current explanation. Our data also give insight into the high temperature regime and show that the temperature dependence of the resistivity derives in part from strong T dependent mass renormalizations.

Controlling Umklapp Scattering in a Bilayer Graphene Moiré Superlattice

We present experimental findings on electron-electron scattering in two-dimensional moiré heterostructures with a tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around the half-full point, the primary contribution to the resistance of these devices arises from Umklapp electron-electron (Uee) scattering, making the resistance of graphene/hBN moiré devices significantly larger than that of non-aligned devices (where Uee is forbidden). We find that the strength of Uee scattering follows a universal scaling with Fermi energy and is nonmonotonically dependent on the superlattice period. The Uee scattering can be tuned with the electric field and is affected by layer polarization of BLG. It has a strong particle-hole asymmetry; the resistance when the chemical potential is in the conduction band is significantly lower than when it is in the valence band, making the electron-doped regime more practical for potential applications.

Plasma-Induced 2D Electron Transport at Hetero-Phase Titanium Oxide Interface

Interfaces of metal oxide heterojunctions display a variety of intriguing physical properties that enable novel applications in spintronics, quantum information, neuromorphic computing, and high-temperature superconductivity. One such LaAlO3 /SrTiO3 (LAO/STO) heterojunction hosts a 2D electron liquid (2DEL) presenting remarkable 2D superconductivity and magnetism. However, these remarkable properties emerge only at very low temperatures, while the heterostructure fabrication is challenging even at the laboratory scale, thus impeding practical applications. Here, a novel plasma-enabled fabrication concept is presented to develop the TiO2 /Ti3 O4 hetero-phase bilayer with a 2DEL that exhibits features of a weakly localized Fermi liquid even at room temperature. The hetero-phase bilayer is fabricated by applying a rapid plasma-induced phase transition that transforms a specific portion of anatase TiO2 thin film into vacancy-prone Ti3 O4 in seconds. The underlying mechanism relies on the screening effect of the achieved high-density electron liquid that suppresses the electron-phonon interactions. The achieved "adiabatic" electron transport in the hetero-phase bilayer offers strong potential for low-loss electric or plasmonic circuits and hot electron harvesting and utilization. These findings open new horizons for fabricating diverse multifunctional metal oxide heterostructures as an innovative platform for emerging clean energy, integrated photonics, spintronics, and quantum information technologies.

T-Square Dependence of the Electronic Thermal Resistivity of Metallic Strontium Titanate

The temperature dependence of the phase space for electron-electron (e-e) collisions leads to a T-square contribution to electrical resistivity of metals. Umklapp scattering is identified as the origin of momentum loss due to e-e scattering in dense metals. However, in dilute metals like lightly doped strontium titanate, the origin of T-square electrical resistivity in the absence of umklapp events is yet to be pinned down. Here, by separating electron and phonon contributions to heat transport, we extract the electronic thermal resistivity in niobium-doped strontium titanate and show that it also displays a T-square temperature dependence. Its amplitude correlates with the T-square electrical resistivity. The Wiedemann-Franz law strictly holds in the zero-temperature limit, but not at finite temperature, because the two T-square prefactors are different by a factor of ≈3, like in other Fermi liquids. Recalling the case of ^{3}He, we argue that T-square thermal resistivity does not require umklapp events. The approximate recovery of the Wiedemann-Franz law in the presence of disorder would account for a T-square electrical resistivity without umklapp.

Achieving Ferroelectricity in a Centrosymmetric High-Performance Semiconductor by Strain Engineering

Phase engineering by strain in 2D semiconductors is of great importance for a variety of applications. Here, a study of the strain-induced ferroelectric (FE) transition in bismuth oxyselenide (Bi₂ O₂ Se) films, a high-performance (HP) semiconductor for next-generation electronics, is presented. Bi₂ O₂ Se is not FE at ambient pressure. At a loading force of ≳400 nN, the piezoelectric force responses exhibit butterfly loops in magnitude and 180° phase switching. By carefully ruling out extrinsic factors, these features are attributed to a transition to the FE phase. The transition is further supported by the appearance of a sharp peak in optical second-harmonic generation under uniaxial strain. In general, solids with paraelectrics at ambient pressure and FE under strain are rare. The FE transition is discussed using first-principles calculations and theoretical simulations. The switching of FE polarization acts as a knob for Schottky barrier engineering at contacts and serves as the basis for a memristor with a huge on/off current ratio of 10⁶ . This work adds a new degree of freedom to HP electronic/optoelectronic semiconductors, and the integration of FE and HP semiconductivity paves the way for many exciting functionalities, including HP neuromorphic computing and bulk piezophotovoltaics.

Topological transport properties of highly oriented Bi2Te3thin film deposited by sputtering

Topological insulators (TIs) are the promising materials for next-generation technology due to their exotic features such as spin momentum locking, conducting surface states, etc. However, the high-quality growth of TIs by sputtering technique, which is one of the foremost industrial requirements, is extremely challenging. Also, the demonstration of simple investigation protocols to characterize topological properties of TIs using electron-transport methods is highly desirable. Here, we report the quantitative investigation of non-trivial parameters employing magnetotransport measurements on a prototypical highly textured Bi2Te3TI thin film prepared by sputtering. Through the systematic analyses of the temperature and magnetic field dependent resistivity, all topological parameters associated with TIs, such as coherency factorα, Berry phase (ΦB), mass term (m), the dephasing parameter (p), slope of temperature dependent conductivity correction (κ) and the surface state penetration depth (λ) are estimated by using the modified 'Hikami-Larkin-Nagaoka', 'Lu-Shen' and 'Altshuler-Aronov' models. The obtained values of topological parameters are well comparable to those reported on molecular beam epitaxy grown TIs. The epitaxial growth of Bi2Te3film using sputtering, and investigation of the non-trivial topological states from its electron-transport behavior are important for their fundamental understanding and technological applications.

Negative Magnetoresistance in Hopping Regime of Lightly Doped Thermoelectric SnSe

Semiconducting SnSe, an analog of black phosphorus, recently attracted great scientific interest due to a disputed report of a large thermoelectric figure of merit, which has not been reproduced subsequently. Here we concentrate on the low-temperature ground state. To gain a better understanding of the system, we present magneto-transport properties in high-quality single crystals of as-grown, lightly doped SnSe down to liquid helium temperatures. We show that SnSe behaves as a p-type doped semiconductor in the vicinity of a metal-insulator transition. Electronic transport at the lowest temperatures is dominated by the hopping mechanism. Negative magnetoresistance at low fields is well described by antilocalization, while positive magnetoresistance at higher fields is consistent with the shrinkage of localized impurity wavefunctions. At higher temperatures, a dilute metallic regime is realized where elusive T² and B² resistivity dependence is observed, posing a challenge to theoretical comprehension of the underlying physical mechanism.

Multicomponent odd-parity superconductivity in UAu2 at high pressure

We report that high-quality single crystals of the hexagonal heavy fermion material uranium diauride (UAu₂) become superconducting at pressures above 3.2 GPa, the pressure at which an unusual antiferromagnetic state is suppressed. The antiferromagnetic state hosts a marginal fermi liquid and the pressure evolution of the resistivity within this state is found to be very different from that approaching a standard quantum phase transition. The superconductivity that appears above this transition survives in high magnetic fields with a large critical field for all field directions. The critical field also has an unusual angle dependence suggesting that the superconductivity may have an order parameter with multiple components. An order parameter consistent with these observations is predicted to host half-quantum vortices (HQVs). Such vortices can be topologically entangled and have potential applications in quantum computing.

High Mobility and Quantum Oscillations in Semiconducting Bi2O2Te Nanosheets Grown by Chemical Vapor Deposition

Bi₂O₂Te has the smallest effective mass and preferable carrier mobility in the Bi₂O₂X (X = S, Se, Te) family. However, compared to the widely explored Bi₂O₂Se, the studies on Bi₂O₂Te are very rare, probably attributed to the lack of efficient ways to achieve the growth of ultrathin films. Herein, ultrathin Bi₂O₂Te crystals were successfully synthesized by a trace amount of O₂-assisted chemical vapor deposition (CVD) method, enabling the observation of ultrahigh low-temperature Hall mobility of >20 000 cm² V^-1 s^-1, pronounced Shubnikov-de Haas quantum oscillations, and small effective mass of ∼0.10 m₀. Furthermore, few nm thick CVD-grown Bi₂O₂Te crystals showed high room-temperature Hall mobility (up to 500 cm² V^-1 s^-1) both in nonencapsulated and top-gated device configurations and preserved the intrinsic semiconducting behavior with I_on/I_off ∼ 10³ at 300 K and >10⁶ at 80 K. Our work uncovers the veil of semiconducting Bi₂O₂Te with high mobility and brings new blood into Bi₂O₂X family.

Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA μm-1

High-mobility and air-stable two-dimensional (2D) Bi₂O₂Se semiconductor holds promise as an alternative fast channel material for next-generation transistors. However, one of the key challenges remaining in 2D Bi₂O₂Se is to prepare high-quality crystals to fabricate the high-performance transistors with a high on-state current density. Here, we present the free-standing growth of strain-free 2D Bi₂O₂Se crystals. An ultrahigh Hall mobility of 160 000 cm² V^-1 s^-1 is measured in strain-free Bi₂O₂Se crystals at 2 K, which enables the observation of Shubnikov-de Haas quantum oscillations and shows substantially higher (>4 times) mobility over previous in-plane 2D crystals. The fabricated 2D transistors feature an on-off current ratio of ∼10⁶ and a record-high on-state current density of ∼1.33 mA μm^-1, which is comparable to that of commercial Si and Ge n-type field-effect transistors (FETs) for similar channel length. Strain-free 2D Bi₂O₂Se provides a promising material platform for studying novel quantum phenomena and exploration of high-performance low-power electronics.

Giant Modulation of the Electron Mobility in Semiconductor Bi2O2Se via Incipient Ferroelectric Phase Transition

High-mobility layered semiconductors have the potential to enable the next-generation electronics and computing. This paper demonstrates that the ultrahigh electron mobility observed in the layered semiconductor Bi₂O₂Se originates from an incipient ferroelectric transition that endows the material with a robust protection against mobility degradation by Coulomb scattering. Based on first-principles calculations of electron-phonon interaction and ionized impurity scattering, it is shown that the electron mobility of Bi₂O₂Se can reach 10⁴ to 10⁶ cm² V^-1 s^-1 over a wide range of realistic doping concentrations. Furthermore, a small elastic strain of 1.7% can drive the material toward a unique interlayer ferroelectric transition, resulting in a large increase in the dielectric permittivity and a giant enhancement of the low-temperature electron mobility by more than an order of magnitude. These results establish a new route to realize high-mobility layered semiconductors via phase and dielectric engineering.

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits

Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi₂O₂Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi₂O₂Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi₂O₂Se on top of a silicon waveguide. We demonstrated the Bi₂O₂Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W^-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz^-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi₂O₂Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.

Electron-Phonon Coupling and Electron-Phonon Scattering in SrVO3

Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlations characteristic of narrow d bands are at the origin of remarkable properties such as the opening of Mott gap, enhanced effective mass, and anomalous vibronic coupling, to mention a few. SrVO3 with V4+  in a 3d1  electronic configuration is the simplest example of a 3D correlated metallic electronic system. Here, the authors' focus on the observation of a (roughly) quadratic temperature dependence of the inverse electron mobility of this seemingly simple system, which is an intriguing property shared by other metallic oxides. The systematic analysis of electronic transport in SrVO3  thin films discloses the limitations of the simplest picture of e-e correlations in a Fermi liquid (FL); instead, it is shown show that the quasi-2D topology of the Fermi surface (FS) and a strong electron-phonon coupling, contributing to dress carriers with a phonon cloud, play a pivotal role on the reported electron spectroscopic, optical, thermodynamic, and transport data. The picture that emerges is not restricted to SrVO3  but can be shared with other 3d and 4d metallic oxides.

Thermal resistivity and hydrodynamics of the degenerate electron fluid in antimony

Detecting hydrodynamic fingerprints in the flow of electrons in solids constitutes a dynamic field of investigation in contemporary condensed matter physics. Most attention has been focused on the regime near the degeneracy temperature when the thermal velocity can present a spatially modulated profile. Here, we report on the observation of a hydrodynamic feature in the flow of quasi-ballistic degenerate electrons in bulk antimony. By scrutinizing the temperature dependence of thermal and electric resistivities, we detect a size-dependent departure from the Wiedemann-Franz law, unexpected in the momentum-relaxing picture of transport. This observation finds a natural explanation in the hydrodynamic picture, where upon warming, momentum-conserving collisions reduce quadratically in temperature both viscosity and thermal diffusivity. This effect has been established theoretically and experimentally in normal-state liquid ³He. The comparison of electrons in antimony and fermions in ³He paves the way to a quantification of momentum-conserving fermion-fermion collision rate in different Fermi liquids.

Viscous fermionic flow appears in liquid helium but rarely appears in metallic solid. Here, Jaoui et al. report a T-square thermal resistivity due to momentum conserving electronic scattering in semi-metallic antimony, which is in agreement with the hydrodynamic scenario.