1
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Wang T, Yu X. Helicity-Sensitive Terahertz Detection in Monolayer 1T'-WTe 2. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38619870 DOI: 10.1021/acsami.3c18898] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Valleytronics, identified as electronic properties of the energy band extrema in momentum space, has been intensively revived following the emergence of two-dimensional transition metal dichalcogenides (TMDCs) as their valley information can be controlled and probed through the spin angular momentum of light. Previous optical investigations of valleytronics have been limited to the visible/near-infrared spectral regime through which the carriers of most TMDCs can be excited. Monolayer 1T'-WTe2 with broken time-reversal symmetry provides a fertile platform to study the long-wavelength photonic properties in different valleys. Here, we employed a circularly polarized terahertz (THz) laser to selectively excite the valley of monolayer 1T'-WTe2 and demonstrate that the helicity-dependent photoresponse is generated via the photogalvanic effect (PGE). We also observed that the photocurrent is controlled by circular polarization and the external electric field. Because of the tunable Berry curvature dipole derived from the nontrivial wave functions near the inverted gap edge in monolayer WTe2, the bandgap can be tuned efficiently. Our results provide a versatile venue for controlling, detecting, and processing valleytronics and applications in on-chip THz imaging and quantum information processing.
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Affiliation(s)
- Ting Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Xuechao Yu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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2
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Shin D, Rubio A, Tang P. Light-Induced Ideal Weyl Semimetal in HgTe via Nonlinear Phononics. PHYSICAL REVIEW LETTERS 2024; 132:016603. [PMID: 38242673 DOI: 10.1103/physrevlett.132.016603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 11/27/2023] [Accepted: 11/29/2023] [Indexed: 01/21/2024]
Abstract
Interactions between light and matter allow the realization of out-of-equilibrium states in quantum solids. In particular, nonlinear phononics is one of the most efficient approaches to realizing the stationary electronic state in nonequilibrium. Herein, by an extended ab initio molecular dynamics method, we identify that long-lived light-driven quasistationary geometry could stabilize the topological nature in the material family of HgTe compounds. We show that coherent excitation of the infrared-active phonon mode results in a distortion of the atomic geometry with a lifetime of several picoseconds. We show that four Weyl points are located exactly at the Fermi level in this nonequilibrium geometry, making it an ideal long-lived metastable Weyl semimetal. We propose that such a metastable topological phase can be identified by photoelectron spectroscopy of the Fermi arc surface states or ultrafast pump-probe transport measurements of the nonlinear Hall effect.
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Affiliation(s)
- Dongbin Shin
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - Angel Rubio
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
- Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del País Vasco, UPV/EHU-20018 San Sebastián, Spain
- Center for Computational Quantum Physics (CCQ), The Flatiron Institute, 162 Fifth Avenue, New York, New York 10010, USA
| | - Peizhe Tang
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
- School of Materials Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
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3
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Liu W, Liu H, Wang Z, Li S, Wang L, Luo J. Inverse Design of Light Manipulating Structural Phase Transition in Solids. J Phys Chem Lett 2023; 14:6647-6657. [PMID: 37462525 DOI: 10.1021/acs.jpclett.3c00576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
This Perspective focuses on recent advances in understanding ultrafast processes involved in photoinduced structural phase transitions and proposes a strategy for precise manipulation of such transitions. It has been demonstrated that photoexcited carriers occupying empty antibonding or bonding states generate atomic driving forces that lead to either stretching or shortening of associated bonds, which in turn induce collective and coherent motions of atoms and yield structural transitions. For instance, phase transitions in IrTe2 and VO2, and nonthermal melting in Si, can be explained by the occupation of specific local bonding or antibonding states during laser excitation. These cases reveal the electronic-orbital-selective nature of laser-induced structural transitions. Based on this understanding, we propose an inverse design protocol for achieving or preventing a target structural transition by controlling the related electron occupations with orbital-selective photoexcitation. Overall, this Perspective provides a comprehensive overview of recent advancements in dynamical structural control in solid materials.
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Affiliation(s)
- Wenhao Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haowen Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhi Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Shushen Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Linwang Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Junwei Luo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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4
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Zhao R, You P, Meng S. Ring Polymer Molecular Dynamics with Electronic Transitions. PHYSICAL REVIEW LETTERS 2023; 130:166401. [PMID: 37154659 DOI: 10.1103/physrevlett.130.166401] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Revised: 05/25/2022] [Accepted: 03/20/2023] [Indexed: 05/10/2023]
Abstract
Full quantum dynamics of molecules and materials is of fundamental importance, which requires a faithful description of simultaneous quantum motions of the electron and nuclei. A new scheme is developed for nonadiabatic simulations of coupled electron-nuclear quantum dynamics with electronic transitions based on the Ehrenfest theorem and ring polymer molecular dynamics. Built upon the isomorphic ring polymer Hamiltonian, time-dependent multistate electronic Schrödinger equations are solved self-consistently with approximate equation of motions for nuclei. Each bead bears a distinct electronic configuration and thus moves on a specific effective potential. This independent-bead approach provides an accurate description of the real-time electronic population and quantum nuclear trajectory, maintaining a good agreement with the exact quantum solution. Implementation of first-principles calculations enables us to simulate photoinduced proton transfer in H_{2}O-H_{2}O^{+} where we find a good agreement with experiment.
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Affiliation(s)
- Ruji Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peiwei You
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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5
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Iurov A, Zhemchuzhna L, Gumbs G, Huang D, Tse WK, Blaise K, Ejiogu C. Floquet engineering of tilted and gapped Dirac bandstructure in 1T[Formula: see text]-MoS[Formula: see text]. Sci Rep 2022; 12:21348. [PMID: 36494457 PMCID: PMC9734163 DOI: 10.1038/s41598-022-25898-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Accepted: 12/06/2022] [Indexed: 12/13/2022] Open
Abstract
We have developed a rigorous theoretical formalism for Floquet engineering, investigating, and subsequently tailoring most crucial electronic properties of 1T[Formula: see text]-MoS[Formula: see text] by applying an external high-frequency dressing field within the off-resonance regime. It was recently demonstrated that monolayer semiconducting 1T[Formula: see text]-MoS[Formula: see text] exhibits tunable and gapped spin- and valley-polarized tilted Dirac bands. The electron-photon dressed states depend strongly on the polarization of the applied irradiation and reflect a full complexity of the low-energy Hamiltonian for non-irradiated material. We have calculated and analyzed the properties of the electron dressed states corresponding to linear and circular polarization of a dressing field by focusing on their symmetry, anisotropy, tilting, direct and indirect band gaps. Circularly polarized dressing field is known for transition into a new electronic state with broken time-reversal symmetry and a non-zero Chern number, and therefore, the combination of these topologically non-trivial phases and transitions between them could reveal some truly unique and previously unknown phenomena and applications. We have also computed and discussed the density of states for various types of 1T[Formula: see text]-MoS[Formula: see text] materials and its modification in the presence of a dressing field.
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Affiliation(s)
- Andrii Iurov
- Department of Physics and Computer Science, Medgar Evers College of City University of New York, Brooklyn, NY 11225 USA
| | - Liubov Zhemchuzhna
- Department of Physics and Computer Science, Medgar Evers College of City University of New York, Brooklyn, NY 11225 USA
- Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, New York, 10065 USA
| | - Godfrey Gumbs
- Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, New York, 10065 USA
- Donostia International Physics Center (DIPC), P de Manuel Lardizabal, 4, 20018 San Sebastian, Basque Country Spain
| | - Danhong Huang
- US Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, New Mexico, 87117 USA
| | - Wang-Kong Tse
- Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, AL 35487 USA
| | - Kathy Blaise
- Department of Physics and Computer Science, Medgar Evers College of City University of New York, Brooklyn, NY 11225 USA
| | - Chinedu Ejiogu
- Department of Physics and Computer Science, Medgar Evers College of City University of New York, Brooklyn, NY 11225 USA
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6
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Shin D, Latini S, Schäfer C, Sato SA, Baldini E, De Giovannini U, Hübener H, Rubio A. Simulating Terahertz Field-Induced Ferroelectricity in Quantum Paraelectric SrTiO_{3}. PHYSICAL REVIEW LETTERS 2022; 129:167401. [PMID: 36306771 DOI: 10.1103/physrevlett.129.167401] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2021] [Revised: 04/19/2022] [Accepted: 09/01/2022] [Indexed: 06/16/2023]
Abstract
Recent experiments have demonstrated that light can induce a transition from the quantum paraelectric to the ferroelectric phase of SrTiO_{3}. Here, we investigate this terahertz field-induced ferroelectric phase transition by solving the time-dependent lattice Schrödinger equation based on first-principles calculations. We find that ferroelectricity originates from a light-induced mixing between ground and first excited lattice states in the quantum paraelectric phase. In agreement with the experimental findings, our study shows that the nonoscillatory second harmonic generation signal can be evidence of ferroelectricity in SrTiO_{3}. We reveal the microscopic details of this exotic phase transition and highlight that this phenomenon is a unique behavior of the quantum paraelectric phase.
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Affiliation(s)
- Dongbin Shin
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - Simone Latini
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - Christian Schäfer
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
- Department of Microtechnology and Nanoscience, MC2, Chalmers University of Technology, 412 96 Göteborg, Sweden
| | - Shunsuke A Sato
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
- Center for Computational Sciences, University of Tsukuba, Tsukuba 305-8577, Japan
| | - Edoardo Baldini
- Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA
| | - Umberto De Giovannini
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
- Universitá degli Studi di Palermo, Dipartimento di Fisica e Chimica-Emilio Segrè, via Archirafi 36, I-90123 Palermo, Italy
| | - Hannes Hübener
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - Angel Rubio
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
- Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del País Vasco UPV/EHU, 20018 San Sebastián, Spain
- Center for Computational Quantum Physics (CCQ), The Flatiron Institute, 162 Fifth Avenue, New York, New York 10010, USA
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7
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Martins Quintela MFC, Costa AT, Peres NMR. Excitonic instability in transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:455303. [PMID: 36063813 DOI: 10.1088/1361-648x/ac8f7d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 09/05/2022] [Indexed: 06/15/2023]
Abstract
When transition-metal dichalcogenide monolayers lack inversion symmetry, their low-energy single particle spectrum near some high-symmetry points can, in some cases, be described by tilted massive Dirac Hamiltonians. The so-called Janus materials fall into that category. Inversion symmetry can also be broken by the application of out-of-plane electric fields, or by the mere presence of a substrate. Here we explore the properties of excitons in TMDC monolayers lacking inversion symmetry. We find that exciton binding energies can be larger than the electronic band gap, making such materials promising candidates to host the elusive exciton insulator phase. We also investigate the excitonic contribution to their optical conductivity and discuss the associated optical selection rules.
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Affiliation(s)
- M F C Martins Quintela
- Department of Physics and Centre of Physics of the Universites of Minho and Porto (CF-UM-UP), Campus of Gualtar, 4710-057 Braga, Portugal
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330 Braga, Portugal
| | - A T Costa
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330 Braga, Portugal
| | - N M R Peres
- Department of Physics and Centre of Physics of the Universites of Minho and Porto (CF-UM-UP), Campus of Gualtar, 4710-057 Braga, Portugal
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330 Braga, Portugal
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8
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Yang Q, Song C, Meng S. Laser-induced enhancement of vertical polarization in ferroelectric bilayer WTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:424003. [PMID: 35944555 DOI: 10.1088/1361-648x/ac885b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2022] [Accepted: 08/09/2022] [Indexed: 06/15/2023]
Abstract
Light-matter interaction is one of the key means to manipulate the structural and electronic properties of materials, especially in two-dimensional (2D) layered materials, which are optically accessible due to their atomic thickness. We propose that an ultrashort laser pulse could drastically enhance the ferroelectric polarization of bilayer WTe2by our real-time time-dependent density functional theory simulations. It is noted that bilayer WTe2is a 2D sliding ferroelectric material recently discovered whose vertical polarization can be controlled by a slight horizontal displacement. We demonstrate that interlayer sliding and compression are simultaneously achieved upon illumination of linearly polarized near-infrared laser pulse, leading to an ultrafast electric polarization enhancement by ∼230% within hundreds of femtosecond. Two major contributions have been identified: (a) the piezoelectric effect due to laser-induced interlayer compression, caused by interlayer charge transfer and dipole-dipole interaction; (b) the interlayer sliding along the opposite direction of ferroelectric switching, induced by inhomogeneous excited carrier distribution and specific electron-phonon couplings. This work provides new insights on controlling ferroelectricity of layered materials, which may extend to other van der Waals bilayers and even bulk materials.
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Affiliation(s)
- Qing Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Chenchen Song
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
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9
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Qi Y, Guan M, Zahn D, Vasileiadis T, Seiler H, Windsor YW, Zhao H, Meng S, Ernstorfer R. Traversing Double-Well Potential Energy Surfaces: Photoinduced Concurrent Intralayer and Interlayer Structural Transitions in XTe 2 (X = Mo, W). ACS NANO 2022; 16:11124-11135. [PMID: 35793703 DOI: 10.1021/acsnano.2c03809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The microscopic arrangement of atoms and molecules is the determining factor in how materials behave and perform; i.e., the structure determines the property, a traditional paradigm in materials science. Photoexcitation-driven manipulation of the crystal structure and associated electronic properties in quantum materials provides opportunities for the exploration of exotic physics and practical applications; however, a generalized mechanism for such symmetry engineering is absent. Here, by ultrafast electron diffraction, structure factor calculation, and TDDFT-MD simulations, we report the photoinduced concurrent intralayer and interlayer structural transitions in the Td and 1T' phases of XTe2 (X = Mo, W). We discuss the modification of multiple quantum electronic states associated with the intralayer and interlayer structural transitions, such as the topological band inversion and the higher-order topological state. The twin structures and the stacking faults in XTe2 are also identified by ultrafast structural responses. The comprehensive study of the ultrafast structural response in XTe2 suggests the traversal of all double-well potential energy surfaces (DWPES) by laser excitation, which is expected to be an intrinsic mechanism in the field of photoexcitation-driven global/local symmetry engineering and also a critical ingredient inducing the exotic properties in the non-equilibrium state in a large number of material systems.
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Affiliation(s)
- Yingpeng Qi
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin 14195, Germany
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Mengxue Guan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Daniela Zahn
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin 14195, Germany
| | - Thomas Vasileiadis
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin 14195, Germany
| | - Hélène Seiler
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin 14195, Germany
| | - Yoav William Windsor
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin 14195, Germany
| | - Hui Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ralph Ernstorfer
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin 14195, Germany
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10
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Kirubasankar B, Won YS, Adofo LA, Choi SH, Kim SM, Kim KK. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications. Chem Sci 2022; 13:7707-7738. [PMID: 35865881 PMCID: PMC9258346 DOI: 10.1039/d2sc01398c] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 05/18/2022] [Indexed: 12/14/2022] Open
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.
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Affiliation(s)
- Balakrishnan Kirubasankar
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
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11
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Kim B, Park N, Kim J. Giant bulk photovoltaic effect driven by the wall-to-wall charge shift in WS 2 nanotubes. Nat Commun 2022; 13:3237. [PMID: 35688833 PMCID: PMC9187746 DOI: 10.1038/s41467-022-31018-8] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2021] [Accepted: 05/27/2022] [Indexed: 01/13/2023] Open
Abstract
The intrinsic light-matter characteristics of transition-metal dichalcogenides have not only been of great scientific interest but have also provided novel opportunities for the development of advanced optoelectronic devices. Among the family of transition-metal dichalcogenide structures, the one-dimensional nanotube is particularly attractive because it produces a spontaneous photocurrent that is prohibited in its higher-dimensional counterparts. Here, we show that WS2 nanotubes exhibit a giant shift current near the infrared region, amounting to four times the previously reported values in the higher frequency range. The wall-to-wall charge shift constitutes a key advantage of the one-dimensional nanotube geometry, and we consider a Janus-type heteroatomic configuration that can maximize this interwall effect. To assess the nonlinear effect of a strong field and the nonadiabatic effect of atomic motion, we carried out direct real-time integration of the photoinduced current using time-dependent density functional theory. Our findings provide a solid basis for a complete quantum mechanical understanding of the unique light-matter interaction hidden in the geometric characteristics of the reduced dimension.
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Affiliation(s)
- Bumseop Kim
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 689-798, Korea
| | - Noejung Park
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 689-798, Korea.
| | - Jeongwoo Kim
- Department of Physics, Incheon National University, Incheon, 406-772, Korea.
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12
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Deng J, Zhang W, Dai X, Yu Y, Li Z, Wang W, Wang L, Zhou J, Chen X. Nonmonotonic wavelength dependence of the polarization-sensitive infrared photoresponse of an anisotropic semimetal. NANOSCALE 2022; 14:7314-7321. [PMID: 35532931 DOI: 10.1039/d1nr08268j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Layered semimetals with in-plane anisotropy are promising for advanced polarization-sensitive infrared detection. The investigation of the polarization-dependent photoresponse of semimetals over the whole visible-to-long-wave-infrared range and revealing the physical connection between their optoelectronic properties, optical properties, and electronic band structures is required, but there have been very few studies of this kind. In this work, we conducted a thorough investigation on the polarization-dependent infrared photoresponse of WTe2 over the visible-to-long-wave-infrared range and discovered a textbook-like perfect consistency between the wavelength-dependent polarization-sensitive photoresponse and the anisotropic dielectric constant mainly affected by interband transitions near the Weyl point. It is revealed that the polarization sensitivity and the responsivity both vary non-monotonically with the wavelength. This phenomenon is attributed to the polarization selective excitation of interband transitions associated with asymmetrically distributed electron orbitals around the Weyl points. Concerning the infrared detection properties of WTe2, a maximum responsivity of 0.68 mA W-1 is obtained under self-powered operation. The power dependence of the photoresponse is linear, and the response time is around 14 μs. This work would provoke further studies about the anisotropic photoresponse associated with the transitions even closer to the Dirac or Weyl points, and it provides an approach to select the right semimetal for the right wavelength range of infrared polarization detection.
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Affiliation(s)
- Jie Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Zhang
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
| | - Xu Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
| | - Zhifeng Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Wang
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
| | - Lin Wang
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
| | - Jing Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
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13
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Dai Y, Zheng Q, Ziffer ME, Rhodes D, Hone J, Zhao J, Zhu X. Ultrafast Ferroelectric Ordering on the Surface of a Topological Semimetal MoTe 2. NANO LETTERS 2021; 21:9903-9908. [PMID: 34788055 DOI: 10.1021/acs.nanolett.1c02965] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Transient tuning of material properties by light usually requires intense laser fields in the nonlinear excitation regime. Here, we report ultrafast ferroelectric ordering on the surface of a paraelectric topological semimetal 1T'-MoTe2 in the linear excitation regime, with the order parameter directly proportional to the excitation intensity. The ferroelectric ordering, driven by a transient electric field created by electrons trapped ångstroms away from the surface in the image potential state (IPS), is evidenced in two-photon photoemission spectroscopy showing the energy relaxation rate proportional to IPS electron density, but with negligible change in the free-electron-like parallel dispersion. First-principles calculations reveal an improper ferroelectric ordering associated with an anharmonic interlayer shearing mode. Our findings demonstrate an ultrafast charge-based pathway for creating transient polarization orders.
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Affiliation(s)
- Yanan Dai
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Qijing Zheng
- Department of Physics, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Mark E Ziffer
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Daniel Rhodes
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Jin Zhao
- Department of Physics, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Xiaoyang Zhu
- Department of Chemistry, Columbia University, New York, New York 10027, United States
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14
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Xu M, Tang B, Lu Y, Zhu C, Lu Q, Zhu C, Zheng L, Zhang J, Han N, Fang W, Guo Y, Di J, Song P, He Y, Kang L, Zhang Z, Zhao W, Guan C, Wang X, Liu Z. Machine Learning Driven Synthesis of Few-Layered WTe 2 with Geometrical Control. J Am Chem Soc 2021; 143:18103-18113. [PMID: 34606266 DOI: 10.1021/jacs.1c06786] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Reducing the lateral scale of two-dimensional (2D) materials to one-dimensional (1D) has attracted substantial research interest not only to achieve competitive electronic applications but also for the exploration of fundamental physical properties. Controllable synthesis of high-quality 1D nanoribbons (NRs) is thus highly desirable and essential for further study. Here, we report the implementation of supervised machine learning (ML) for the chemical vapor deposition (CVD) synthesis of high-quality quasi-1D few-layered WTe2 NRs. Feature importance analysis indicates that H2 gas flow rate has a profound influence on the formation of WTe2, and the source ratio governs the sample morphology. Notably, the growth mechanism of 1T' few-layered WTe2 NRs is further proposed, which provides new insights for the growth of intriguing 2D and 1D tellurides and may inspire the growth strategies for other 1D nanostructures. Our findings suggest the effectiveness and capability of ML in guiding the synthesis of 1D nanostructures, opening up new opportunities for intelligent materials development.
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Affiliation(s)
- Manzhang Xu
- School of Information Science and Technology, Northwest University, Xi'an 710127, P. R. China.,Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Bijun Tang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yuhao Lu
- School of Computer Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Qianbo Lu
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Jingyu Zhang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Weidong Fang
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. China
| | - Yuxi Guo
- School of Information Science and Technology, Northwest University, Xi'an 710127, P. R. China
| | - Jun Di
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Pin Song
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yongmin He
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Lixing Kang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Zhiyong Zhang
- School of Information Science and Technology, Northwest University, Xi'an 710127, P. R. China
| | - Wu Zhao
- School of Information Science and Technology, Northwest University, Xi'an 710127, P. R. China
| | - Cuntai Guan
- School of Computer Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553, Singapore.,School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
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