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Pan S, Wei L, Xie J, Lu Z, Yuan J, Tang T, Meng L, Wang X, Zhu J, Fu Y. Orientation-modulated oxygen evolution reaction in epitaxial SrRuO 3 films. Chem Commun (Camb) 2024; 60:14842-14845. [PMID: 39585168 DOI: 10.1039/d4cc05379f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2024]
Abstract
The SrRuO3 films were grown on SrTiO3 using a lattice matching strategy. Scanning electrochemical microscopy imaged local oxygen evolution reaction (OER) performance, exploring the relationship between micro-area activity and the termination layer. Combined with traditional electrochemical methods and DFT calculations, the OER activity was correlated with the electronic structure.
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Affiliation(s)
- Shencheng Pan
- Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Lianjin Wei
- Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Junlong Xie
- Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhenjie Lu
- Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jiajia Yuan
- Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Tian Tang
- Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Leichao Meng
- Qinghai Provincial Key Laboratory of Nanomaterials and Technology, Qinghai Minzu University, Xi'ning 81007, China.
| | - Xin Wang
- Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Junwu Zhu
- Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yongsheng Fu
- Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China
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2
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Liu R, Si L, Niu W, Zhang X, Chen Z, Zhu C, Zhuang W, Chen Y, Zhou L, Zhang C, Wang P, Song F, Tang L, Xu Y, Zhong Z, Zhang R, Wang X. Light-Induced Mott-Insulator-to-Metal Phase Transition in Ultrathin Intermediate-Spin Ferromagnetic Perovskite Ruthenates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211612. [PMID: 36626850 DOI: 10.1002/adma.202211612] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 01/06/2023] [Indexed: 06/17/2023]
Abstract
Light control of emergent quantum phenomena is a widely used external stimulus for quantum materials. Generally, perovskite strontium ruthenate SrRuO3 has an itinerant ferromagnetism with a low-spin state. However, the phase of intermediate-spin (IS) ferromagnetic metallic state has never been seen. Here, by means of UV-light irradiation, a photocarrier-doping-induced Mott-insulator-to-metal phase transition is shown in a few atomic layers of perovskite IS ferromagnetic SrRuO3- δ . This new metastable IS metallic phase can be reversibly regulated due to the convenient photocharge transfer from SrTiO3 substrates to SrRuO3- δ ultrathin films. These dynamical mean-field theory calculations further verify such photoinduced electronic phase transformation, owing to oxygen vacancies and orbital reconstruction. The optical manipulation of charge-transfer finesse is an alternative pathway toward discovering novel metastable phases in strongly correlated systems and facilitates potential light-controlled device applications in optoelectronics and spintronics.
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Affiliation(s)
- Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Liang Si
- School of Physics, Northwest University, Xi'an, 710127, China
- Institute of Solid State Physics, Vienna University of Technology, Vienna, 1040, Austria
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Changzheng Zhu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Wenzhuo Zhuang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yongda Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Liqi Zhou
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
| | - Chunchen Zhang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
| | - Peng Wang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Fengqi Song
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Lin Tang
- Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Department of Physics, Xiamen University, Xiamen, 316005, China
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
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Yang R, Gao Y, Wang S, Jin K. High-Mobility Magnetic Two-Dimensional Electron Gas in Engineered Oxide Interfaces. ACS APPLIED MATERIALS & INTERFACES 2023; 15:2376-2383. [PMID: 36577504 DOI: 10.1021/acsami.2c17638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The engineered interfaces of complex oxides have abundant physical properties and provide a powerful platform for the exploration of fundamental physics and emergent phenomena. In particular, research on the two-dimensional magnetic systems with high mobility remains a long-standing challenge for the discovery of quantum phase and spintronic applications. Here, we introduce a few atomic layers of the delta doping layer at LaAlO3/SrTiO3 interfaces through elaborately controllable epitaxial growth of SrRuO3. After inserting a SrRuO3 buffer layer, the interfaces exhibit a well-defined anomalous Hall effect up to 100 K and their mobility is enhanced by 3 orders of magnitude at low temperatures. More intriguingly, a large unsaturated positive magnetoresistance is created at interfaces. Combining with the density functional theory calculation, we attribute our findings to the electron transfer at interfaces and the magnetic moment of Ru4+ 4d bands. The results pave a way for further research of two-dimensional ferromagnetism and quantum transport in all-oxide systems.
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Affiliation(s)
- Ruishu Yang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710072, China
| | - Yuqiang Gao
- Department of Physics, School of Physics and Electronic Information, Anhui Normal University, Wuhu241000, China
| | - Shuanhu Wang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710072, China
| | - Kexin Jin
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710072, China
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Lee JW, Kim J, Eom K, Jeon J, Kim YC, Kim HS, Ahn YH, Kim S, Eom CB, Lee H. Strong Interfacial Charge Trapping in Ultrathin SrRuO 3 on SrTiO 3 Probed by Noise Spectroscopy. J Phys Chem Lett 2022; 13:5618-5625. [PMID: 35704419 DOI: 10.1021/acs.jpclett.2c01163] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
SrRuO3 (SRO) has emerged as a promising quantum material due to its exotic electron correlations and topological properties. In epitaxial SRO films, electron scattering against lattice phonons or defects has been considered as only a predominant mechanism accounting for electronic properties. Although the charge trapping by polar defects can also strongly influence the electronic behavior, it has often been neglected. Herein, we report strong interfacial charge trapping in ultrathin SRO films on SrTiO3 (STO) substrates probed by noise spectroscopy. We find that oxygen vacancies in the STO cause stochastic interfacial charge trapping, resulting in high electrical noise. Spectral analyses of the photoinduced noise prove that the oxygen vacancies buried deep in the STO can effectively contribute to the charge trapping process. These results unambiguously reveal that electron transport in ultrathin SRO films is dominated by the carrier number fluctuation that correlates with interfacial charge trapping.
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Affiliation(s)
- Jung-Woo Lee
- KIURI Institute, Yonsei University, Seoul 03722, Republic of Korea
| | - Jiyeong Kim
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
| | - Kitae Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Jaeyoung Jeon
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Young Chul Kim
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hwan Sik Kim
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Yeong Hwan Ahn
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Hyungwoo Lee
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
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Yen PTW, Wu HC, Huang SM. First-principles study of the crystal and magnetic structures of multiferroic Cu 2OCl 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:335602. [PMID: 35654030 DOI: 10.1088/1361-648x/ac75a2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2022] [Accepted: 06/01/2022] [Indexed: 06/15/2023]
Abstract
Recently, the discovery of multiferroicity in pyrochlore-like compound Cu2OCl2has generated significant interest, and several studies have been performed in this area. This transition metal oxychloride is unique because the divalent copper atoms create anS=1/2correlated insulator and the pyrochlore lattice tends to frustrate spins. From neutron powder diffraction measurements, an incommensurate magnetic order of the ordering vectorq=(0.827,0,0)emerges below the Néel temperature of 70 K. At this temperature or slightly above, ferroelectricity (FE) or antiferroelectricity, accompanying a lattice distortion, has been observed. Experimentally, some discrepancies remain. In this paper, we report our first-principles simulation results by evaluating the possible lattice and spin spiral states. We found that theFdddstructure is not more stable thanFdd2(a), which is supported by our reexamination of the x-ray diffraction data. In addition, we find that after we include magnetism in the calculation, it predicts that theFdd2(a)lattice with a helical (proper screw) spin structure is energetically more stable than other spin configurations. Our results indicate charge-order-driven FE that subsequently induces magnetism.
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Affiliation(s)
- Peter Tsung-Wen Yen
- Physics Department, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Center for Crystal Researches, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Hung-Cheng Wu
- Physics Department, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Shin-Ming Huang
- Physics Department, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Center for Crystal Researches, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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Niu X, Chen BB, Zhong N, Xiang PH, Duan CG. Topological Hall effect in SrRuO 3thin films and heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:244001. [PMID: 35325882 DOI: 10.1088/1361-648x/ac60d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 03/24/2022] [Indexed: 06/14/2023]
Abstract
Transition metal oxides hold a wide spectrum of fascinating properties endowed by the strong electron correlations. In 4dand 5doxides, exotic phases can be realized with the involvement of strong spin-orbit coupling (SOC), such as unconventional magnetism and topological superconductivity. Recently, topological Hall effects (THEs) and magnetic skyrmions have been uncovered in SrRuO3thin films and heterostructures, where the presence of SOC and inversion symmetry breaking at the interface are believed to play a key role. Realization of magnetic skyrmions in oxides not only offers a platform to study topological physics with correlated electrons, but also opens up new possibilities for magnetic oxides using in the low-power spintronic devices. In this review, we discuss recent observations of THE and skyrmions in the SRO film interfaced with various materials, with a focus on the electric tuning of THE. We conclude with a discussion on the directions of future research in this field.
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Affiliation(s)
- Xu Niu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
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7
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Abstract
Ferroics, especially ferromagnets, can form complex topological spin structures such as vortices1 and skyrmions2,3 when subjected to particular electrical and mechanical boundary conditions. Simple vortex-like, electric-dipole-based topological structures have been observed in dedicated ferroelectric systems, especially ferroelectric-insulator superlattices such as PbTiO3/SrTiO3, which was later shown to be a model system owing to its high depolarizing field4-8. To date, the electric dipole equivalent of ordered magnetic spin lattices driven by the Dzyaloshinskii-Moriya interaction (DMi)9,10 has not been experimentally observed. Here we examine a domain structure in a single PbTiO3 epitaxial layer sandwiched between SrRuO3 electrodes. We observe periodic clockwise and anticlockwise ferroelectric vortices that are modulated by a second ordering along their toroidal core. The resulting topology, supported by calculations, is a labyrinth-like pattern with two orthogonal periodic modulations that form an incommensurate polar crystal that provides a ferroelectric analogue to the recently discovered incommensurate spin crystals in ferromagnetic materials11-13. These findings further blur the border between emergent ferromagnetic and ferroelectric topologies, clearing the way for experimental realization of further electric counterparts of magnetic DMi-driven phases.
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Yao X, Wang C, Guo EJ, Wang X, Li X, Liao L, Zhou Y, Lin S, Jin Q, Ge C, He M, Bai X, Gao P, Yang G, Jin KJ. Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO 3/BiFeO 3 Multilayers. ACS APPLIED MATERIALS & INTERFACES 2022; 14:6194-6202. [PMID: 35072446 DOI: 10.1021/acsami.1c21703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO3 (SRO) and multiferroic BiFeO3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.
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Affiliation(s)
- Xiaokang Yao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xinyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Lei Liao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yong Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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