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Wang Z, Liu Y, Ji C, Wang J. Quantum phase transitions in two-dimensional superconductors: a review on recent experimental progress. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:014502. [PMID: 38086096 DOI: 10.1088/1361-6633/ad14f3] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Accepted: 12/12/2023] [Indexed: 12/30/2023]
Abstract
Superconductor-insulator/metal transition (SMT) as a paradigm of quantum phase transition has been a research highlight over the last three decades. Benefit from recent developments in the fabrication and measurements of two-dimensional (2D) superconducting films and nanodevices, unprecedented quantum phenomena have been revealed in the quantum phase transitions of 2D superconductors. In this review, we introduce the recent progress on quantum phase transitions in 2D superconductors, focusing on the quantum Griffiths singularity (QGS) and anomalous metal state. Characterized by a divergent critical exponent when approaching zero temperature, QGS of SMT is discovered in ultrathin crystalline Ga films and subsequently detected in various 2D superconductors. The universality of QGS indicates the profound influence of quenched disorder on quantum phase transitions. Besides, in a 2D superconducting system, whether a metallic ground state can exist is a long-sought mystery. Early experimental studies indicate an intermediate metallic state in the quantum phase transition of 2D superconductors. Recently, in high-temperature superconducting films with patterned nanopores, a robust anomalous metal state (i.e. quantum metal or Bose metal) has been detected, featured as the saturated resistance in the low temperature regime. Moreover, the charge-2equantum oscillations are observed in nanopatterned films, indicating the bosonic nature of the anomalous metal state and ending the debate on whether bosons can exist as a metal. The evidences of the anomalous metal states have also been reported in crystalline epitaxial thin films and exfoliated nanoflakes, as well as granular composite films. High quality filters are used in these works to exclude the influence of external high frequency noises in ultralow temperature measurements. The observations of QGS and metallic ground states in 2D superconductors not only reveal the prominent role of quantum fluctuations and dissipations but also provide new perspective to explore quantum phase transitions in superconducting systems.
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Affiliation(s)
- Ziqiao Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yi Liu
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, People's Republic of China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, People's Republic of China
| | - Chengcheng Ji
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Hefei National Laboratory, Hefei 230088, People's Republic of China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Hefei National Laboratory, Hefei 230088, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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Guo Y, Qiu D, Shao M, Song J, Wang Y, Xu M, Yang C, Li P, Liu H, Xiong J. Modulations in Superconductors: Probes of Underlying Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209457. [PMID: 36504310 DOI: 10.1002/adma.202209457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/16/2022] [Indexed: 06/02/2023]
Abstract
The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.
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Affiliation(s)
- Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Mingxin Shao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jingyan Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Peng Li
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Haiwen Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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Cao C, Melegari M, Philippi M, Domaretskiy D, Ubrig N, Gutiérrez-Lezama I, Morpurgo AF. Full Control of Solid-State Electrolytes for Electrostatic Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211993. [PMID: 36812653 DOI: 10.1002/adma.202211993] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Revised: 02/10/2023] [Indexed: 05/05/2023]
Abstract
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here, a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs) is explored, the processes responsible for the spurious phenomena and irreproducible behavior are identified, and properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ≈ 20 - 50 µ F c m - 2 \[20{\bm{ - }}50\;\mu F c{m^{{\bm{ - }}2}}\] (depending on the polarity of the accumulated charges) are demonstrated. Using 2D semiconducting transition-metal dichalcogenides, the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 1014 cm-2 are demostrated, resulting in gate-induced superconductivity in MoS2 multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field.
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Affiliation(s)
- Chuanwu Cao
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Margherita Melegari
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Marc Philippi
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Daniil Domaretskiy
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
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Yang Y, Jia L, Wang D, Zhou J. Advanced Strategies in Synthesis of Two-Dimensional Materials with Different Compositions and Phases. SMALL METHODS 2023; 7:e2201585. [PMID: 36739597 DOI: 10.1002/smtd.202201585] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/28/2022] [Indexed: 06/18/2023]
Abstract
In recent years, 2D materials-Ma Xb with different compositions and phases have attracted tremendous attention due to their diverse structures and electronic features. The common thermodynamically stable 2H and metastable 1T phases have been extensively studied, however, there are many unusual compositions and phases with novel physical properties that have yet to be explored. Therefore, summarization of the synthesis strategies, atomic structures, and the unique physical properties of 2D materials with different compositions and phases is very important for their development. In this review, the strategies including chemical vapor deposition, intercalation, atomic layer deposition, chemical vapor transport, and electrostatic gating for synthesizing various 2D materials with different phases and compositions are first summarized. Specially, the intercalation strategies including heterogeneous- and self-intercalation for controllable phases and compositions fabrication are mainly discussed. Then, the novel atomic structures of 2D materials are analyzed, followed by the fascinating physical properties including ferroelectricity, ferromagnetism, superconductivity, and so on. Finally, the conclusion and outlook are offered including the challenges and future prospects of 2D materials with different compositions and phases.
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Affiliation(s)
- Yang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Lin Jia
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dainan Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- MIIT Key Laboratory of Complex-field Intelligent Exploration, Beijing Institute of Technology, Beijing, 100081, China
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Huang Y, Lv S, Liu H, Cheng Q, Biao Y, Lu H, Lin X, Wang Z, Yang H, Chen H, Weng YX. Observation of photoinduced polarons in semimetal 1T-TiSe 2. NANOTECHNOLOGY 2023; 34:235707. [PMID: 36877995 DOI: 10.1088/1361-6528/acc188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Accepted: 03/05/2023] [Indexed: 06/18/2023]
Abstract
In this work, ultrafast carrier dynamics of mechanically exfoliated 1T-TiSe2flakes from the high-quality single crystals with self-intercalated Ti atoms are investigated by femtosecond transient absorption spectroscopy. The observed coherent acoustic and optical phonon oscillations after ultrafast photoexcitation reveal the strong electron-phonon coupling in 1T-TiSe2. The ultrafast carrier dynamics probed in both visible and mid-infrared regions indicate that some photogenerated carriers localize near the intercalated Ti atoms and form small polarons rapidly within several picoseconds after photoexcitation due to the strong and short-range electron-phonon coupling. The formation of polarons leads to a reduction of carrier mobility and a long-time relaxation process of photoexcited carriers for several nanoseconds. The formation and dissociation rates of the photoinduced polarons are dependent on both the pump fluence and the thickness of TiSe2sample. This work offers new insights into the photogenerated carrier dynamics of 1T-TiSe2, and emphasizes the effects of intercalated atoms on the electron and lattice dynamics after photoexcitation.
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Affiliation(s)
- Yin Huang
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Senhao Lv
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Heyuan Liu
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Qiuzhen Cheng
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yi Biao
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Hongliang Lu
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xiao Lin
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Zhuan Wang
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Haitao Yang
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, People's Republic of China
| | - Hailong Chen
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, People's Republic of China
| | - Yu-Xiang Weng
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, People's Republic of China
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Cao Y, Li L, Yu X, Tahir M, Xiang Z, Kong W, Lu Z, Xing X, Song Y. Engineering Vacancies at the 2D Nanocrystals for Robust Bifunctional Electrocatalysts. ACS APPLIED MATERIALS & INTERFACES 2022; 14:56725-56734. [PMID: 36524589 DOI: 10.1021/acsami.2c15955] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) through water decomposition are feasible methods to produce green and clean energy. Herein, we report a facile two-step strategy for the preparation of non-noble metal defect-rich nanosheets by an electrochemical process at room temperature. First-principle calculations are used to study the bifunctional catalytic reaction mechanism of defect engineering in transition-metal dichalcogenides (TMDs); from the first-principle calculations, we predicted that the rich S vacancies on the nanosheet promoted electron transfer and reduced the energy barrier of electrocatalysis. As a substantiation, we conducted HER/OER electrochemical characterizations and found that the defect-rich atomic-thick tantalum sulfide is a kind of dual-function electrocatalyst with enhanced comprehensive properties of Tafel slope (39 mV/dec for HER, 38 mV/dec for OER) and low overpotential (0.099 V for HER, 0.153 V for OER) in acidic and alkaline environments, respectively. Likewise, the defect-rich catalysts exhibit high stability in acidic and alkaline solutions, which have potential applications as electrocatalysts for the large-scale production of hydrogen and oxygen.
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Affiliation(s)
- Yawei Cao
- School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing100083, P. R. China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Green Printing, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences (ICCAS), Beijing100190, P. R. China
| | - Lihong Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Green Printing, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences (ICCAS), Beijing100190, P. R. China
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Xiaoxia Yu
- School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing100083, P. R. China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Green Printing, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences (ICCAS), Beijing100190, P. R. China
| | - Muhammad Tahir
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Green Printing, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences (ICCAS), Beijing100190, P. R. China
| | - Zhongyuan Xiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Green Printing, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences (ICCAS), Beijing100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing100049, P. R. China
| | - Wei Kong
- School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing100083, P. R. China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Green Printing, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences (ICCAS), Beijing100190, P. R. China
| | - Zehua Lu
- School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing100083, P. R. China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Green Printing, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences (ICCAS), Beijing100190, P. R. China
| | - Xianran Xing
- School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing100083, P. R. China
| | - Yanlin Song
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Green Printing, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences (ICCAS), Beijing100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing100049, P. R. China
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Ji JY, Bao T, Wang H, Xu Y, Zhang D, Xue QK. Homogeneous Lateral Lithium Intercalation into Transition Metal Dichalcogenides via Ion Backgating. NANO LETTERS 2022; 22:7336-7342. [PMID: 36122383 DOI: 10.1021/acs.nanolett.2c01705] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Lithium intercalation has become a versatile tool for realizing emergent quantum phenomena in two-dimensional (2D) materials. However, the insertion of lithium ions may be accompanied by the creation of wrinkles and cracks, which prevents the material from manifesting its intrinsic properties under substantial charge injection. By using the recently developed ion backgating technique, we successfully realize lateral intercalation in 1T-TiSe2 and 2H-NbSe2, which shows substantially improved sample homogeneity. The homogeneity at high lithium doping is not only demonstrated via low-temperature transport measurements but also directly visualized by topographical imaging through in situ atomic force microscopy (AFM). The application of lateral intercalation to a broad spectrum of 2D materials can greatly facilitate the search for exotic quantum phenomena.
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Affiliation(s)
- Jia-Yi Ji
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Ting Bao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Heng Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center for Quantum Matter, Beijing 100084, China
| | - Ding Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center for Quantum Matter, Beijing 100084, China
| | - Qi-Kun Xue
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center for Quantum Matter, Beijing 100084, China
- Southern University of Science and Technology, Shenzhen 518055, China
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