1
|
Asakura M, Higo T, Matsuo T, Uesugi R, Nishio-Hamane D, Nakatsuji S. Observation of Omnidirectional Exchange Bias at All-Antiferromagnetic Polycrystalline Heterointerface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400301. [PMID: 38531113 DOI: 10.1002/adma.202400301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2024] [Revised: 03/13/2024] [Indexed: 03/28/2024]
Abstract
Due to promising functionalities that may dramatically enhance spintronics performance, antiferromagnets are the subject of intensive research for developing the next-generation active elements to replace ferromagnets. In particular, the recent experimental demonstration of tunneling magnetoresistance and electrical switching using chiral antiferromagnets has sparked expectations for the practical integration of antiferromagnetic materials into device architectures. To further develop the technology to manipulate the magnetic anisotropies in all-antiferromagnetic devices, it is essential to realize exchange bias through the interface between antiferromagnetic multilayers. Here, the first observation on the omnidirectional exchange bias at an all-antiferromagnetic polycrystalline heterointerface is reported. This experiment demonstrates that the interfacial energy causing the exchange bias between the chiral-antiferromagnet Mn3Sn/collinear-antiferromagnet MnN layers is comparable to those found at the conventional ferromagnet/antiferromagnet interface at room temperature. In sharp contrast with previous reports using ferromagnets, the magnetic field control of the unidirectional anisotropy is found to be omnidirectional due to the absence of the shape anisotropy in the antiferromagnetic multilayer. The realization of the omnidirectional exchange bias at the interface between polycrystalline antiferromagnets on amorphous templates, highly compatible with existing Si-based devices, paves the way for developing ultra-low power and ultra-high speed memory devices based on antiferromagnets.
Collapse
Affiliation(s)
- Mihiro Asakura
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
| | - Tomoya Higo
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
- CREST, Japan Science and Technology Agency, Kawaguchi, Saitama, 332-0012, Japan
| | - Takumi Matsuo
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
- Institute for Quantum Matter and Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD, 21218, USA
| | - Ryota Uesugi
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
| | - Daisuke Nishio-Hamane
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
| | - Satoru Nakatsuji
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
- CREST, Japan Science and Technology Agency, Kawaguchi, Saitama, 332-0012, Japan
- Institute for Quantum Matter and Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD, 21218, USA
- Trans-scale Quantum Science Institute, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
| |
Collapse
|
2
|
Chen H, Liu L, Zhou X, Meng Z, Wang X, Duan Z, Zhao G, Yan H, Qin P, Liu Z. Emerging Antiferromagnets for Spintronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310379. [PMID: 38183310 DOI: 10.1002/adma.202310379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Revised: 12/18/2023] [Indexed: 01/08/2024]
Abstract
Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.
Collapse
Affiliation(s)
- Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Li Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Ziang Meng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiyuan Duan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Guojian Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| |
Collapse
|
3
|
Hu S, Qiu X, Pan C, Zhu W, Guo Y, Shao DF, Yang Y, Zhang D, Jiang Y. Frontiers in all electrical control of magnetization by spin orbit torque. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:253001. [PMID: 38467073 DOI: 10.1088/1361-648x/ad3270] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2024] [Accepted: 03/11/2024] [Indexed: 03/13/2024]
Abstract
Achieving all electrical control of magnetism without assistance of an external magnetic field has been highly pursued for spintronic applications. In recent years, the manipulation of magnetic states through spin-orbit torque (SOT) has emerged as a promising avenue for realizing energy-efficient spintronic memory and logic devices. Here, we provide a review of the rapidly evolving research frontiers in all electrical control of magnetization by SOT. The first part introduces the SOT mechanisms and SOT devices with different configurations. In the second part, the developments in all electrical SOT control of magnetization enabled by spin current engineering are introduced, which include the approaches of lateral symmetry breaking, crystalline structure engineering of spin source material, antiferromagnetic order and interface-generated spin current. The third part introduces all electrical SOT switching enabled by magnetization engineering of the ferromagnet, such as the interface/interlayer exchange coupling and tuning of anisotropy or magnetization. At last, we provide a summary and future perspectives for all electrical control of magnetization by SOT.
Collapse
Affiliation(s)
- Shuai Hu
- Institute of Quantum Materials and Devices, School of Electronic and Information Engineering; State Key Laboratory of Separation Membrane and Membrane Processes, Tiangong University, Tianjin 300387, People's Republic of China
| | - Xuepeng Qiu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Chang Pan
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Wei Zhu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Yandong Guo
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Ding-Fu Shao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - Yumeng Yang
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Delin Zhang
- Institute of Quantum Materials and Devices, School of Electronic and Information Engineering; State Key Laboratory of Separation Membrane and Membrane Processes, Tiangong University, Tianjin 300387, People's Republic of China
| | - Yong Jiang
- Institute of Quantum Materials and Devices, School of Electronic and Information Engineering; State Key Laboratory of Separation Membrane and Membrane Processes, Tiangong University, Tianjin 300387, People's Republic of China
| |
Collapse
|
4
|
Dai Y, Xiong J, Ge Y, Cheng B, Wang L, Wang P, Liu Z, Yan S, Zhang C, Xu X, Shi Y, Cheong SW, Xiao C, Yang SA, Liang SJ, Miao F. Interfacial magnetic spin Hall effect in van der Waals Fe 3GeTe 2/MoTe 2 heterostructure. Nat Commun 2024; 15:1129. [PMID: 38321042 PMCID: PMC10847462 DOI: 10.1038/s41467-024-45318-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2023] [Accepted: 01/19/2024] [Indexed: 02/08/2024] Open
Abstract
The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.
Collapse
Affiliation(s)
- Yudi Dai
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Junlin Xiong
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yanfeng Ge
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing, 210094, China.
| | - Lizheng Wang
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Pengfei Wang
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zenglin Liu
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Shengnan Yan
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Cuiwei Zhang
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Xianghan Xu
- Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, 08854, USA
| | - Youguo Shi
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Sang-Wook Cheong
- Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, 08854, USA
| | - Cong Xiao
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, SAR, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
| | - Shengyuan A Yang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, SAR, China
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
| | - Feng Miao
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
| |
Collapse
|
5
|
Xie H, Zhang N, Ma Y, Chen X, Ke L, Wu Y. Efficient Noncollinear Antiferromagnetic State Switching Induced by the Orbital Hall Effect in Chromium. NANO LETTERS 2023; 23:10274-10281. [PMID: 37909311 DOI: 10.1021/acs.nanolett.3c02797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Recently, orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of the antiferromagnetic state in Mn3Sn/Cr, where despite the much smaller spin Hall angle of Cr, the switching current density is comparable to heavy metal-based heterostructures. However, the inverse process, i.e., spin-to-charge conversion in Cr-based heterostructures, is much less efficient than the Pt-based equivalents, as manifested in the 1 order of magnitude smaller terahertz emission intensity and spin current-induced magnetoresistance. These results in combination with the slow decay of terahertz emission against Cr thickness (diffusion length of ∼11 nm) suggest that the observed magnetic switching can be attributed to orbital current generation in Cr, followed by efficient conversion to spin current. Our work demonstrates the potential of light metals like Cr as efficient orbital/spin current sources for antiferromagnetic spintronics.
Collapse
Affiliation(s)
- Hang Xie
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Nan Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Yuteng Ma
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- National University of Singapore (Chong Qing) Research Institute, Chongqing Liang Jiang New Area, Chongqing 401123, China
| | - Xin Chen
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Lin Ke
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Yihong Wu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- National University of Singapore (Chong Qing) Research Institute, Chongqing Liang Jiang New Area, Chongqing 401123, China
| |
Collapse
|
6
|
Tahir M, Chen H. Transport of Spin Magnetic Multipole Moments Carried by Bloch Quasiparticles. PHYSICAL REVIEW LETTERS 2023; 131:106701. [PMID: 37739362 DOI: 10.1103/physrevlett.131.106701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 03/31/2023] [Accepted: 08/08/2023] [Indexed: 09/24/2023]
Abstract
Magnetic ordering beyond the standard dipolar order has attracted significant attention in recent years, but it remains an open question how to effectively manipulate such nontrivial order parameters using external perturbations such as electric currents or fields. In particular, it is desirable to have a conceptual tool similar to nonequilibrium spin currents in spintronics to describe the creation and transport of multipole moments. In this context, we present a theory for Cartesian spin magnetic multipole moments of Bloch quasiparticles and their transport based on a general gauge-invariant formula obtained using the wave packet approach. As a concrete example, we point out that the low-energy Hamiltonian of phosphorene subject to a perpendicular electric field has a valley structure that hosts magnetic octupole moments. The magnetic octupole moments can be exhibited by an in-plane electric current and lead to accumulation of staggered spin densities at the corners of a rectangular sample. Our Letter paves the way for systematically seeking and utilizing quasiparticles with higher-order magnetic multipole moments in crystal materials towards the emergence of multipoletronics.
Collapse
Affiliation(s)
- Muhammad Tahir
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
| | - Hua Chen
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
- School of Advanced Materials Discovery, Colorado State University, Fort Collins, Colorado 80523, USA
| |
Collapse
|
7
|
Hazra BK, Pal B, Jeon JC, Neumann RR, Göbel B, Grover B, Deniz H, Styervoyedov A, Meyerheim H, Mertig I, Yang SH, Parkin SSP. Generation of out-of-plane polarized spin current by spin swapping. Nat Commun 2023; 14:4549. [PMID: 37507398 PMCID: PMC10382594 DOI: 10.1038/s41467-023-39884-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 07/03/2023] [Indexed: 07/30/2023] Open
Abstract
The generation of spin currents and their application to the manipulation of magnetic states is fundamental to spintronics. Of particular interest are chiral antiferromagnets that exhibit properties typical of ferromagnetic materials even though they have negligible magnetization. Here, we report the generation of a robust spin current with both in-plane and out-of-plane spin polarization in epitaxial thin films of the chiral antiferromagnet Mn3Sn in proximity to permalloy thin layers. By employing temperature-dependent spin-torque ferromagnetic resonance, we find that the chiral antiferromagnetic structure of Mn3Sn is responsible for an in-plane polarized spin current that is generated from the interior of the Mn3Sn layer and whose temperature dependence follows that of this layer's antiferromagnetic order. On the other hand, the out-of-plane polarized spin current is unrelated to the chiral antiferromagnetic structure and is instead the result of scattering from the Mn3Sn/permalloy interface. We substantiate the later conclusion by performing studies with several other non-magnetic metals all of which are found to exhibit out-of-plane polarized spin currents arising from the spin swapping effect.
Collapse
Affiliation(s)
- Binoy K Hazra
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Banabir Pal
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Jae-Chun Jeon
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Robin R Neumann
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle (Saale), Germany
| | - Börge Göbel
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle (Saale), Germany
| | - Bharat Grover
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Hakan Deniz
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Andriy Styervoyedov
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Holger Meyerheim
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Ingrid Mertig
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle (Saale), Germany
| | - See-Hun Yang
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Stuart S P Parkin
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany.
| |
Collapse
|
8
|
Bai H, Zhang YC, Zhou YJ, Chen P, Wan CH, Han L, Zhu WX, Liang SX, Su YC, Han XF, Pan F, Song C. Efficient Spin-to-Charge Conversion via Altermagnetic Spin Splitting Effect in Antiferromagnet RuO_{2}. PHYSICAL REVIEW LETTERS 2023; 130:216701. [PMID: 37295074 DOI: 10.1103/physrevlett.130.216701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Accepted: 04/20/2023] [Indexed: 06/12/2023]
Abstract
The relativistic spin Hall effect and inverse spin Hall effect enable the efficient generation and detection of spin current. Recently, a nonrelativistic altermagnetic spin splitting effect (ASSE) has been theoretically and experimentally reported to generate time-reversal-odd spin current with controllable spin polarization in antiferromagnet RuO_{2}. The inverse effect, electrical detection of spin current via ASSE, still remains elusive. Here we show the spin-to-charge conversion stemming from ASSE in RuO_{2} by the spin Seebeck effect measurements. Unconventionally, the spin Seebeck voltage can be detected even when the injected spin current is polarized along the directions of either the voltage channel or the thermal gradient, indicating the successful conversion of x- and z-spin polarizations into the charge current. The crystal axes-dependent conversion efficiency further demonstrates that the nontrivial spin-to-charge conversion in RuO_{2} is ascribed to ASSE, which is distinct from the magnetic or antiferromagnetic inverse spin Hall effects. Our finding not only advances the emerging research landscape of altermagnetism, but also provides a promising pathway for the spin detection.
Collapse
Affiliation(s)
- H Bai
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Y C Zhang
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Y J Zhou
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - P Chen
- Beijing National fLaboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - C H Wan
- Beijing National fLaboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - L Han
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - W X Zhu
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - S X Liang
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Y C Su
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - X F Han
- Beijing National fLaboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - F Pan
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - C Song
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| |
Collapse
|
9
|
Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory. Sci Rep 2022; 12:19762. [DOI: 10.1038/s41598-022-24075-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Accepted: 11/09/2022] [Indexed: 11/18/2022] Open
Abstract
AbstractMagnetic tunnel junction (MTJ)-based memory devices have larger switching delay and energy consumption, compared to cache or dynamic random access memory. In order to broaden the applications of the magnetoresistive random access memory, reducing the switching time and energy consumption of the MTJ is required. Here, a novel lateral double MTJ with an orthogonal polarizer is proposed. The proposed device consists of three ferromagnetic regions: the first pinned region (PR1) with perpendicular magnetic anisotropy (PMA), a free region (FR) with PMA, and the second pinned region (PR2) with in-plane magnetic anisotropy (IMA). PR1 and PR2 are placed on top of the oxide barrier, which separates them from the FR, comprising a lateral double MTJ structure. The current pulse through PR2 helps to perturb the magnetization of the FR. Since the angle between PR2 and FR is 90°, the initial torque increases significantly, decreasing switching delay by 4.02 times and energy-delay product by 7.23 times. It is also shown, that the area of the access transistor can be reduced by approximately 10%, while maintaining the same energy-delay product and reducing gate RC delay.
Collapse
|
10
|
Huang Q, Guan C, Fan Y, Zhao X, Han X, Dong Y, Xie X, Zhou T, Bai L, Peng Y, Tian Y, Yan S. Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering. ACS NANO 2022; 16:12462-12470. [PMID: 35866710 DOI: 10.1021/acsnano.2c03756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A simple, reliable, and self-switchable spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt single layer is realized by broken multiple inversion symmetry through simultaneously introducing both oblique sputtering and a vertical composition gradient. A quantitative analysis indicates that multiple inversion asymmetries can produce dynamical bias fields along both z- and x-axes, leading to the observed field-free deterministic magnetization switching. Our study provides a method to accomplish fully electrical manipulation of magnetization in a ferromagnetic single layer without the external magnetic field and auxiliary heavy metal layer, enabling flexible design for future spin-orbit torque-based memory and logic devices.
Collapse
Affiliation(s)
- Qikun Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Chaoshuai Guan
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Yibo Fan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiaonan Zhao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiang Han
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yanan Dong
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xuejie Xie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Tie Zhou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lihui Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yong Peng
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Yufeng Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shishen Yan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| |
Collapse
|
11
|
Hu S, Shao DF, Yang H, Pan C, Fu Z, Tang M, Yang Y, Fan W, Zhou S, Tsymbal EY, Qiu X. Efficient perpendicular magnetization switching by a magnetic spin Hall effect in a noncollinear antiferromagnet. Nat Commun 2022; 13:4447. [PMID: 35915121 PMCID: PMC9343665 DOI: 10.1038/s41467-022-32179-2] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Accepted: 07/19/2022] [Indexed: 11/28/2022] Open
Abstract
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn3Sn. The magnetic group symmetry of Mn3Sn allows generation of the out-of-plane spin current carrying spin polarization collinear to its direction induced by an in-plane charge current. This spin current drives an out-of-plane anti-damping torque providing the deterministic switching of the perpendicular magnetization of an adjacent Ni/Co multilayer. Due to being odd with respect to time reversal symmetry, the observed magnetic spin Hall effect and the resulting spin-orbit torque can be reversed with reversal of the antiferromagnetic order. Contrary to the conventional spin-orbit torque devices, the demonstrated magnetization switching does not need an external magnetic field and requires much lower current density which is useful for low-power spintronics. Spin-orbit torques driven by the conventional spin Hall effect are widely used to switch magnetization, but this approach is nondeterministic and inefficient for magnets with perpendicular magnetic anisotropy. Here, the authors demonstrate deterministic, field-free switching in a Ni/Co multilayer by exploiting the magnetic spin Hall effect in adjacent Mn3Sn.
Collapse
Affiliation(s)
- Shuai Hu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Ding-Fu Shao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588-0299, USA.,Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Huanglin Yang
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Chang Pan
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Zhenxiao Fu
- School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, ShanghaiTech University, Shanghai, 201210, China
| | - Meng Tang
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Yumeng Yang
- School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China. .,Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, ShanghaiTech University, Shanghai, 201210, China.
| | - Weijia Fan
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Shiming Zhou
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588-0299, USA.
| | - Xuepeng Qiu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
| |
Collapse
|