1
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Wang L, Wang S, Niu Y, Liu X, Wu Y, Zhang B, Liu Z, Li XP, Chen XQ. Intercalating Architecture for the Design of Charge Density Wave in Metallic MA 2Z 4 Materials. NANO LETTERS 2024. [PMID: 39145763 DOI: 10.1021/acs.nanolett.4c02998] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2024]
Abstract
We present a novel approach to induce charge density waves (CDWs) in metallic MA2Z4 materials, resembling the behavior observed in transition metal dichalcogenides (TMDCs). This method leverages the intercalating architecture to maintain the same crystal field and Fermi surface topologies. Our investigation reveals that CDW instability in these materials arises from electron-phonon coupling (EPC) between the d band and longitudinal acoustic (LA) phonons, mirroring TMDC's behavior. By combining α-MA2Z4 with 1H-MX2 materials in a predictive CDW phase diagram using critical EPC constants, we demonstrate the feasibility of extending CDW across material families with comparable crystal fields and reveal the crucial role in CDW instability of the competition between ionic charge transfer and electron correlation. We further uncover a strain-induced Mott transition in β2-NbGe2N4 monolayer featuring star-of-David patterns. This work highlights the potential of intercalating architecture to engineer CDW materials, expanding our understanding of CDW instability and correlation physics.
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Affiliation(s)
- Lei Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
| | - ShuaiYu Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
| | - Yuekun Niu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
| | - Xiuying Liu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
| | - Yapeng Wu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
| | - Bing Zhang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
| | - Zhifeng Liu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
| | - Xiao-Ping Li
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, People's Republic of China
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, People's Republic of China
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2
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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3
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Zhang Y, Ma Y, Sun W, Li W, Li G. Structural and Electronic Chirality in Inorganic Crystals: from Construction to Application. Chemistry 2024; 30:e202400436. [PMID: 38571318 DOI: 10.1002/chem.202400436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Revised: 03/31/2024] [Accepted: 04/03/2024] [Indexed: 04/05/2024]
Abstract
Chirality represents a fundamental characteristic inherent in nature, playing a pivotal role in the emergence of homochirality and the origin of life. While the principles of chirality in organic chemistry are well-documented, the exploration of chirality within inorganic crystal structures continues to evolve. This ongoing development is primarily due to the diverse nature of crystal/amorphous structures in inorganic materials, along with the intricate symmetrical and asymmetrical relationships in the geometry of their constituent atoms. In this review, we commence with a summary of the foundational concept of chirality in molecules and solid states matters. This is followed by an introduction of structural chirality and electronic chirality in three-dimensional and two-dimensional inorganic materials. The construction of chirality in inorganic materials is classified into physical photolithography, wet-chemistry method, self-assembly, and chiral imprinting. Highlighting the significance of this field, we also summarize the research progress of chiral inorganic materials for applications in optical activity, enantiomeric recognition and chiral sensing, selective adsorption and enantioselective separation, asymmetric synthesis and catalysis, and chirality-induced spin polarization. This review aims to provide a reference for ongoing research in chiral inorganic materials and potentially stimulate innovative strategies and novel applications in the realm of chirality.
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Affiliation(s)
- Yudi Zhang
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, 19 A Yuquan Rd, Shijingshan District, Beijing, 100049, China
| | - Yuzhe Ma
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, 19 A Yuquan Rd, Shijingshan District, Beijing, 100049, China
| | - Wen Sun
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, 19 A Yuquan Rd, Shijingshan District, Beijing, 100049, China
| | - Wei Li
- CISRI & NIMTE Joint Innovation Center for Rare Earth Permanent Magnets, Chinese Academy of Sciences, Ningbo Institute of Material Technology and Engineering, Ningbo, 315201, China
| | - Guowei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, 19 A Yuquan Rd, Shijingshan District, Beijing, 100049, China
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4
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Chazarin U, Lezoualc'h M, Karn A, Chou JP, Pai WW, Chacon C, Girard Y, Repain V, Bellec A, Rousset S, González C, Smogunov A, Lagoute J, Dappe YJ. Spatially Extended Charge Density Wave Switching by Nanoscale Local Manipulation in a VTe 2 Monolayer. NANO LETTERS 2024; 24:3470-3475. [PMID: 38451177 DOI: 10.1021/acs.nanolett.4c00265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Monolayer transition metal dichalcogenide VTe2 exhibits multiple charge density wave (CDW) phases, mainly (4 × 4) and (4 × 1). Here we report facile dynamic and tens-of-nanometer scale switching between these CDW phases with gentle bias pulses in scanning tunneling microscopy. Bias pulses purposely stimulate a reversible random CDW symmetry change between the isotropic (4 × 4) and anisotropic (4 × 1) CDWs, as well as CDW phase slips and rotation. The switching threshold of ∼1.0 V is independent of bias polarity, and the switching rate varies linearly with the tunneling current. Density functional theory calculations indicate that a coherent CDW phase switching incurs an energy barrier of ∼2.0-3.0 eV per (4 × 4) unit cell. While there is a challenge in understanding the observed large-area CDW random fluttering, we provide some possible explanations. The ability to manipulate electronic CDW phases sheds new light on tailoring CDW properties on demand.
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Affiliation(s)
- Ulysse Chazarin
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France
- Center for Condensed Matter Science (CCMS), National Taiwan University, 11106 Taipei, Taiwan ROC
| | - Mahé Lezoualc'h
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France
| | - Abhishek Karn
- Center for Condensed Matter Science (CCMS), National Taiwan University, 11106 Taipei, Taiwan ROC
| | - Jyh-Ping Chou
- Department of Physics, National Changhua University of Education, 50007 Chuanghua City, Taiwan ROC
| | - Woei Wu Pai
- Center for Condensed Matter Science (CCMS), National Taiwan University, 11106 Taipei, Taiwan ROC
| | - Cyril Chacon
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France
| | - Yann Girard
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France
| | - Vincent Repain
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France
| | - Amandine Bellec
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France
| | - Sylvie Rousset
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France
| | - César González
- Departamento de Física de Materiales, Universidad Complutense de Madrid, E-28040 Madrid, Spain
- Instituto de Magnetismo Aplicado UCM-ADIF, Vía de Servicio A-6, 900, E-28232 Las Rozas de Madrid, Spain
| | - Alexander Smogunov
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France
| | - Jérôme Lagoute
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France
| | - Yannick J Dappe
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France
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5
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Zhang Q, He WY, Zhang Y, Chen Y, Jia L, Hou Y, Ji H, Yang H, Zhang T, Liu L, Gao HJ, Jung TA, Wang Y. Quantum spin liquid signatures in monolayer 1T-NbSe 2. Nat Commun 2024; 15:2336. [PMID: 38485980 PMCID: PMC10940636 DOI: 10.1038/s41467-024-46612-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 03/01/2024] [Indexed: 03/18/2024] Open
Abstract
Quantum spin liquids (QSLs) are in a quantum disordered state that is highly entangled and has fractional excitations. As a highly sought-after state of matter, QSLs were predicted to host spinon excitations and to arise in frustrated spin systems with large quantum fluctuations. Here we report on the experimental observation and theoretical modeling of QSL signatures in monolayer 1T-NbSe2, which is a newly emerging two-dimensional material that exhibits both charge-density-wave (CDW) and correlated insulating behaviors. By using scanning tunneling microscopy and spectroscopy (STM/STS), we confirm the presence of spin fluctuations in monolayer 1T-NbSe2 by observing the Kondo resonance as monolayer 1T-NbSe2 interacts with metallic monolayer 1H-NbSe2. Subsequent STM/STS imaging of monolayer 1T-NbSe2 at the Hubbard band energy further reveals a long-wavelength charge modulation, in agreement with the spinon modulation expected for QSLs. By depositing manganese-phthalocyanine (MnPc) molecules with spin S = 3/2 onto monolayer 1T-NbSe2, new STS resonance peaks emerge at the Hubbard band edges of monolayer 1T-NbSe2. This observation is consistent with the spinon Kondo effect induced by a S = 3/2 magnetic impurity embedded in a QSL. Taken together, these experimental observations indicate that monolayer 1T-NbSe2 is a new promising QSL material.
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Affiliation(s)
- Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Wen-Yu He
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China.
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, China.
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Liangguang Jia
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Yanhui Hou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Hongyan Ji
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Huixia Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Thomas A Jung
- Laboratory for X-ray Nanoscience and Technologies, Paul Scherrer Institut (PSI), 5232, Villigen, Switzerland
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China.
- Yangtze Delta Region Academy, Beijing Institute of Technology, Jiaxing, Zhejiang, 314000, China.
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6
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Wang X, Yi C, Felser C. Chiral Quantum Materials: When Chemistry Meets Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2308746. [PMID: 38126622 DOI: 10.1002/adma.202308746] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 12/01/2023] [Indexed: 12/23/2023]
Abstract
Chirality is a fundamental property of nature with relevance in biochemistry and physics, particularly in the field of catalysis. Understanding the mechanisms underlying chirality transfer is crucial for advancing the knowledge of chiral-related catalysis. Chiral quantum materials with intriguing chirality-dependent electronic properties, such as spin-orbital coupling (SOC) and exotic spin/orbital angular momentum (SAM/OAM), open novel avenues for linking solid-state topologies with chiral catalysis. In this review, the growth of topological homochiral crystals (THCs) is described, and their applications in heterogeneous catalysis, including hydrogen evolution reaction (HER), oxygen electrocatalysis, and asymmetric catalysis are summarized. A possible link between chirality-dependent electronic properties and heterogeneous catalysis is discussed. Finally, existing challenges in this field are highlighted, and a brief outlook on the impact of THCs on the overarching chemical-physical research is presented.
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Affiliation(s)
- Xia Wang
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Changjiang Yi
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
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7
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Song X, Huang X, Yang H, Jia L, Zhang Q, Huang Y, Wu X, Liu L, Gao HJ, Wang Y. Robust Behavior of Charge Density Wave Quantum Motif Star-of-David in 2D NbSe 2 Nanocrystals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2305159. [PMID: 37635109 DOI: 10.1002/smll.202305159] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Revised: 08/02/2023] [Indexed: 08/29/2023]
Abstract
Charge density wave (CDW) is a typical collective phenomenon, and the phase change is generally accompanied by electronic transition with potential device applications. For the continuous miniaturization of devices, it is important to investigate the size effect down to the nanoscale. In this work, single-layer (SL) 1T-NbSe2 islands provide an ideal research platform to investigate the size effect on CDW arrangement and electronic states. The CDW motifs (Star-of-David [SOD]) at the island border are along the edge, and those at the interior tend to arrange in a triangular lattice for islands as small as 5 nm. Interestingly, in some small islands, the SOD clusters rearrange into a square-like lattice, and each SOD cluster remains robust as a quantum motif, both in the sense of geometry and electronic structures. Moreover, the electronic structure at the center of the small islands is downwards shifted compared to the big islands, explained by the spatial extension of the band bending originating from the edge of the islands. These findings reveal the robust behavior of CDW motifs down to the nanoscale and provide new insights into the size-limiting effect on 2D2D CDW ordering and electronic states down to a few nanometer extremes.
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Affiliation(s)
- Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Xinyu Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Liangguang Jia
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Yuan Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Wu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
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8
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Nie Z, Wang Y, Chen D, Meng S. Unraveling Hidden Charge Density Wave Phases in 1T-TiSe_{2}. PHYSICAL REVIEW LETTERS 2023; 131:196401. [PMID: 38000430 DOI: 10.1103/physrevlett.131.196401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 10/02/2023] [Indexed: 11/26/2023]
Abstract
The unexpected chiral order observed in 1T-TiSe_{2} represents an exciting area to explore chirality in condensed matter, while its microscopic mechanism remains elusive. Here, we have identified three metastable collective modes-the so-called single-q modes-in single layer TiSe_{2}, which originate from the unstable phonon eigenvectors at the zone boundary and break the threefold rotational symmetry. We show that polarized laser pulse is a unique and efficient tool to reconstruct the transient potential energy surface, so as to drive phase transitions between these states. By designing sequent layers with chiral stacking order, we propose a practical means to realize chiral charge density waves in 1T-TiSe_{2}. Further, the constructed chiral structure is predicted to exhibit circular dichroism as observed in recent experiments. These facts strongly indicate the chirality transfer from photons to the electron subsystem, meanwhile being strongly coupled to the lattice degree of freedom. Our work provides new insights into understanding and modulating chirality in quantum materials that we hope will spark further experimental investigation.
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Affiliation(s)
- Zhengwei Nie
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yaxian Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Daqiang Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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9
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Ren M, Cheng F, Zhao Y, Gu M, Cheng Q, Yan B, Liu Q, Ma X, Xue Q, Song CL. Chiral Charge Density Wave and Backscattering-Immune Orbital Texture in Monolayer 1 T-TiTe 2. NANO LETTERS 2023; 23:10081-10088. [PMID: 37903418 DOI: 10.1021/acs.nanolett.3c03692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/01/2023]
Abstract
Nontrivial electronic states are attracting intense attention in low-dimensional physics. Though chirality has been identified in charge states with a scalar order parameter, its intertwining with charge density waves (CDW), film thickness, and the impact on the electronic behaviors remain less well understood. Here, using scanning tunneling microscopy, we report a 2 × 2 chiral CDW as well as a strong suppression of the Te-5p hole-band backscattering in monolayer 1T-TiTe2. These exotic characters vanish in bilayer TiTe2 in a non-CDW state. Theoretical calculations prove that chirality comes from a helical stacking of the triple-q CDW components and, therefore, can persist at the two-dimensional limit. Furthermore, the chirality renders the Te-5p bands with an unconventional orbital texture that prohibits electron backscattering. Our study establishes TiTe2 as a promising playground for manipulating the chiral ground states at the monolayer limit and provides a novel path to engineer electronic properties from an orbital degree.
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Affiliation(s)
- Mingqiang Ren
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Fangjun Cheng
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yufei Zhao
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Mingqiang Gu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qiangjun Cheng
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Qihang Liu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xucun Ma
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Qikun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Can-Li Song
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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10
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Koussir H, Chernukha Y, Sthioul C, Haber E, Peric N, Biadala L, Capiod P, Berthe M, Lefebvre I, Wallart X, Grandidier B, Diener P. Large-Area Epitaxial Mott Insulating 1T-TaSe 2 Monolayer on GaP(111)B. NANO LETTERS 2023; 23:9413-9419. [PMID: 37820373 DOI: 10.1021/acs.nanolett.3c02813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Two-dimensional Mott materials have recently been reported in the dichalcogenide family with high potential for Mottronic applications. Nevertheless, their widespread use as a single or few layers is hampered by their limited device integration resulting from their growth on graphene, a metallic substrate. Here, we report on the fabrication of 1T-TaSe2 monolayers grown by molecular beam epitaxy on semiconducting gallium phosphide substrates. At the nanoscale, the charge density wave reconstruction and a moiré pattern resulting from the monolayer interaction with the substrate are observed by scanning tunneling microscopy. The fully open gap unveiled by tunneling spectroscopy, which can be further manipulated by the proximity of a metal tip, is confirmed by transport measurements from micrometric to millimetric scales, demonstrating a robust Mott insulating phase at up to 400 K.
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Affiliation(s)
- H Koussir
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Y Chernukha
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - C Sthioul
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - E Haber
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - N Peric
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - L Biadala
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - P Capiod
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - M Berthe
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - I Lefebvre
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - X Wallart
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - B Grandidier
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - P Diener
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
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11
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Husremović S, Goodge BH, Erodici MP, Inzani K, Mier A, Ribet SM, Bustillo KC, Taniguchi T, Watanabe K, Ophus C, Griffin SM, Bediako DK. Encoding multistate charge order and chirality in endotaxial heterostructures. Nat Commun 2023; 14:6031. [PMID: 37758701 PMCID: PMC10533556 DOI: 10.1038/s41467-023-41780-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 09/16/2023] [Indexed: 09/29/2023] Open
Abstract
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1T-TaS2 due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS2 devices. Here, we demonstrate the fabrication of nanothick verti-lateral H-TaS2/1T-TaS2 heterostructures in which the number of endotaxial metallic H-TaS2 monolayers dictates the number of resistance transitions in 1T-TaS2 lamellae near room temperature. Further, we also observe optically active heterochirality in the CDW superlattice structure, which is modulated in concert with the resistivity steps, and we show how strain engineering can be used to nucleate these polytype conversions. This work positions the principle of endotaxial heterostructures as a promising conceptual framework for reliable, non-volatile, and multi-level switching of structure, chirality, and resistance.
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Affiliation(s)
- Samra Husremović
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
| | - Berit H Goodge
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
- Max-Planck-Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany
| | - Matthew P Erodici
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
| | - Katherine Inzani
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Alberto Mier
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
| | - Stephanie M Ribet
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- International Institute of Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
| | - Karen C Bustillo
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Takashi Taniguchi
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Colin Ophus
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Sinéad M Griffin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA.
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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12
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Nie JH, Xie T, Chen G, Zhang W, Fu YS. Moiré Enhanced Two-Band Superconductivity in a MnTe/NbSe 2 Heterojunction. NANO LETTERS 2023; 23:8370-8377. [PMID: 37656911 DOI: 10.1021/acs.nanolett.3c02772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/03/2023]
Abstract
Recent advances in creating moiré periods of two-dimensional heterostructures enable diverse and compatible tunability to modulate the conventional proximity effect involving superconductivity, magnetism, and topology. Here, by constructing a MnTe/NbSe2 heterojunction via molecular beam epitaxy growth, we report on a moiré-enhanced multiband superconductivity by low-temperature scanning tunneling microscopy/spectroscopy measurements. We observe a distinct double-gap superconducting spectrum on monolayer MnTe that is absent on the NbSe2 substrate. The subgap character exhibits a moiré-related oscillation in real space, which can be well described by an effective two-band model. The restored two-gap feature and its rapid suppression under a small magnetic field are speculated to be mediated by the moiré superlattice, which is closely related to the enhanced interband coupling strength of quasiparticle scattering. Our work paves the way for engineering proximitized properties of heterostructures by a moiré landscape with spatial modulations.
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Affiliation(s)
- Jin-Hua Nie
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Tao Xie
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Gang Chen
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wenhao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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13
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Jin W. Voltage enables ferro-rotational domain switching. NATURE NANOTECHNOLOGY 2023; 18:840-841. [PMID: 37337058 DOI: 10.1038/s41565-023-01414-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Affiliation(s)
- Wencan Jin
- Department of Physics, Auburn University, Auburn, AL, USA.
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14
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Liu G, Qiu T, He K, Liu Y, Lin D, Ma Z, Huang Z, Tang W, Xu J, Watanabe K, Taniguchi T, Gao L, Wen J, Liu JM, Yan B, Xi X. Electrical switching of ferro-rotational order in nanometre-thick 1T-TaS 2 crystals. NATURE NANOTECHNOLOGY 2023; 18:854-860. [PMID: 37169899 DOI: 10.1038/s41565-023-01403-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Accepted: 04/14/2023] [Indexed: 05/13/2023]
Abstract
Hysteretic switching of domain states is a salient characteristic of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a type of ferroic order that features structural rotations, but control over state switching remains elusive due to its invariance under both time reversal and spatial inversion. Here we demonstrate electrical switching of ferro-rotational domain states in the charge-density-wave phases of nanometre-thick 1T-TaS2 crystals. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, which is realized in a simple two-terminal configuration using a volt-scale bias. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable and non-volatile isothermal state switching at room temperature. These results offer a route to the manipulation of ferro-rotational order and its nanoelectronic applications.
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Affiliation(s)
- Gan Liu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
| | - Tianyu Qiu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
| | - Kuanyu He
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
| | - Yizhou Liu
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Dongjing Lin
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
| | - Zhen Ma
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
- Institute for Advanced Materials, Hubei Normal University, Huangshi, China
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
| | - Zhentao Huang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
| | - Wenna Tang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Libo Gao
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jinsheng Wen
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jun-Ming Liu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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15
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Zhao Y, Nie Z, Hong H, Qiu X, Han S, Yu Y, Liu M, Qiu X, Liu K, Meng S, Tong L, Zhang J. Spectroscopic visualization and phase manipulation of chiral charge density waves in 1T-TaS 2. Nat Commun 2023; 14:2223. [PMID: 37076513 PMCID: PMC10115830 DOI: 10.1038/s41467-023-37927-6] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Accepted: 03/30/2023] [Indexed: 04/21/2023] Open
Abstract
The chiral charge density wave is a many-body collective phenomenon in condensed matter that may play a role in unconventional superconductivity and topological physics. Two-dimensional chiral charge density waves provide the building blocks for the fabrication of various stacking structures and chiral homostructures, in which physical properties such as chiral currents and the anomalous Hall effect may emerge. Here, we demonstrate the phase manipulation of two-dimensional chiral charge density waves and the design of in-plane chiral homostructures in 1T-TaS2. We use chiral Raman spectroscopy to directly monitor the chirality switching of the charge density wave-revealing a temperature-mediated reversible chirality switching. We find that interlayer stacking favours homochirality configurations, which is confirmed by first-principles calculations. By exploiting the interlayer chirality-locking effect, we realise in-plane chiral homostructures in 1T-TaS2. Our results provide a versatile way to manipulate chiral collective phases by interlayer coupling in layered van der Waals semiconductors.
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Affiliation(s)
- Yan Zhao
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Zhengwei Nie
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Hao Hong
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xia Qiu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Shiyi Han
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing, 100871, P. R. China
| | - Yue Yu
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing, 100871, P. R. China
| | - Mengxi Liu
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Xiaohui Qiu
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Kaihui Liu
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China.
| | - Lianming Tong
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing, 100871, P. R. China.
| | - Jin Zhang
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing, 100871, P. R. China
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16
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Zhang T, Li R, Hao X, Zhang Q, Yang H, Hou Y, Hou B, Jia L, Jiang K, Zhang Y, Wu X, Zhuang X, Liu L, Yao Y, Guo W, Wang Y. Ullmann-Like Covalent Bond Coupling without Participation of Metal Atoms. ACS NANO 2023; 17:4387-4395. [PMID: 36802507 DOI: 10.1021/acsnano.2c09467] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Ullmann-like on-surface synthesis is one of the most appropriate approaches for the bottom-up fabrication of covalent organic nanostructures and many successes have been achieved. The Ullmann reaction requires the oxidative addition of a catalyst (a metal atom in most cases): the metal atom will insert into a carbon-halogen bond, forming organometallic intermediates, which are then reductively eliminated and form C-C covalent bonds. As a result, traditional Ullmann coupling involves reactions of multiple steps, making it difficult to control the final product. Moreover, forming the organometallic intermediates will potentially poison the metal surface catalytic reactivity. In the study, we used the 2D hBN, an atomically thin sp2-hybridized sheet with a large band gap, to protect the Rh(111) metal surface. It is an ideal 2D platform to decouple the molecular precursor from the Rh(111) surface while maintaining the reactivity of Rh(111). We realize an Ullmann-like coupling of a planar biphenylene-based molecule, i.e., 1,8-dibromobiphenylene (BPBr2), on an hBN/Rh(111) surface with an ultrahigh selectivity of the biphenylene dimer product, containing 4-, 6-, and 8-membered rings. The reaction mechanism, including electron wave penetration and the template effect of the hBN, is elucidated by combining low-temperature scanning tunneling microscopy and density functional theory calculations. Our findings are expected to play an essential role regarding the high-yield fabrication of functional nanostructures for future information devices.
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Affiliation(s)
- Teng Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Renyi Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Frontiers Science Center for High Energy Material (MOE), State Key Laboratory of Explosion Science and Technology, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaoyu Hao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Quanzhen Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Huixia Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yanhui Hou
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Baofei Hou
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Liangguang Jia
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Kaiyue Jiang
- The Meso-Entropy Matter Lab., The State Key Laboratory of Metal Matrix Composites, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Yu Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xu Wu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaodong Zhuang
- The Meso-Entropy Matter Lab., The State Key Laboratory of Metal Matrix Composites, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Liwei Liu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Frontiers Science Center for High Energy Material (MOE), State Key Laboratory of Explosion Science and Technology, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Wei Guo
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Frontiers Science Center for High Energy Material (MOE), State Key Laboratory of Explosion Science and Technology, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yeliang Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
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17
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Li SY, Chen T, Chen Q, Wang D, Zhu G. Concentration-modulated global organizational chirality at the liquid/solid interface. Chem Sci 2023; 14:2646-2651. [PMID: 36908959 PMCID: PMC9993838 DOI: 10.1039/d2sc06746c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 02/09/2023] [Indexed: 02/11/2023] Open
Abstract
Understanding the origin of homochirality in macroscopic assemblies and manipulating organizational chirality still remain a challenge. Herein, homochirality is achieved by combination of the majority-rules principle and concentration-dependent molecular assembly at the liquid/solid interface. A lower molecular concentration in solution facilitates more efficient amplification of chirality, which is formulated by a cooperative equilibrium model based on the Langmuir adsorption isotherm. Our results contribute to gain a new insight into chiral amplification in supramolecular assemblies. Particularly, a homochiral monolayer can be obtained just through modulating the molecular concentration in mixed enantiomer systems.
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Affiliation(s)
- Shu-Ying Li
- Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education, Faculty of Chemistry, Northeast Normal University Changchun 130024 P. R. China
| | - Ting Chen
- Key Laboratory of Molecular Nanostructure and Nanotechnology, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (CAS) Beijing 100190 P.R. China.,University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Qi Chen
- Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education, Faculty of Chemistry, Northeast Normal University Changchun 130024 P. R. China
| | - Dong Wang
- Key Laboratory of Molecular Nanostructure and Nanotechnology, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (CAS) Beijing 100190 P.R. China.,University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Guangshan Zhu
- Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education, Faculty of Chemistry, Northeast Normal University Changchun 130024 P. R. China
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18
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Liu L, Song X, Dai J, Yang H, Chen Y, Huang X, Huang Z, Ji H, Zhang Y, Wu X, Sun JT, Zhang Q, Zhou J, Huang Y, Qiao J, Ji W, Gao HJ, Wang Y. Unveiling Electronic Behaviors in Heterochiral Charge-Density-Wave Twisted Stacking Materials with 1.25 nm Unit Dependence. ACS NANO 2023; 17:2702-2710. [PMID: 36661840 DOI: 10.1021/acsnano.2c10841] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Layered charge-density-wave (CDW) materials have gained increasing interest due to their CDW stacking-dependent electronic properties for practical applications. Among the large family of CDW materials, those with star of David (SOD) patterns are very important due to the potentials for quantum spin liquid and related device applications. However, the spatial extension and the spin coupling information down to the nanoscale remain elusive. Here, we report the study of heterochiral CDW stackings in bilayer (BL) NbSe2 with high spatial resolution. We reveal that there exist well-defined heterochiral stackings, which have inhomogeneous electronic states among neighboring CDW units (star of David, SOD), significantly different from the homogeneous electronic states in the homochiral stackings. Intriguingly, the different electronic behaviors are spatially localized within each SOD with a unit size of 1.25 nm, and the gap sizes are determined by the different types of SOD stackings. Density functional theory (DFT) calculations match the experimental measurements well and reveal the SOD-stacking-dependent correlated electronic states and antiferromagnetic/ferromagnetic couplings. Our findings give a deep understanding of the spatial distribution of interlayer stacking and the delicate modulation of the spintronic states, which is very helpful for CDW-based nanoelectronic devices.
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Affiliation(s)
- Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jiaqi Dai
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xinyu Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Hongyan Ji
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xu Wu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jia-Tao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jiadong Zhou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yuan Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jingsi Qiao
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
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