Probing material absorption and optical nonlinearity of integrated photonic materials

Sub-ppm Nanomechanical Absorption Spectroscopy of Silicon Nitride

Material absorption is a key limitation in nanophotonic systems; however, its characterization is often obscured by scattering and diffraction. Here we show that nanomechanical frequency spectroscopy can be used to characterize material absorption at the parts per million level and use it to characterize the extinction coefficient κ of stoichiometric silicon nitride (Si3N4). Specifically, we track the frequency shift of a high-Q Si3N4 trampoline in response to laser photothermal heating and infer κ from a model including stress relaxation and both conductive and radiative heat transfer. A key insight is the presence of two thermalization time scales: rapid radiative cooling of the Si3N4 film and slow parasitic heating of the Si chip. We infer κ ∼ 0.1-1 ppm for Si3N4 in the 532-1550 nm wavelength range, matching bounds set by waveguide resonators. Our approach is applicable to diverse photonic materials and may offer new insights into their potential.

Non-resonant Bragg scattering four-wave mixing at near-visible wavelengths in low-confinement silicon nitride waveguides

Quantum state coherent frequency conversion processes-such as Bragg-scattering four-wave mixing (BSFWM)-hold promise as a flexible technique for networking heterogeneous and distant quantum systems. In this Letter, we demonstrate BSFWM within an extended (1.2-m) low-confinement silicon nitride waveguide and show that this system has the potential for near-unity frequency conversion in visible and near-visible wavelength ranges. Using sensitive classical heterodyne laser spectroscopy at low optical powers, we characterize the Kerr coefficient (∼1.55 W-1m-1) and linear propagation loss (∼0.0175 dB/cm) of this non-resonant waveguide system, revealing a record-high nonlinear figure of merit (NFM = γ/α ≈ 3.85 W-1) for BSFWM of near-visible light in non-resonant silicon nitride waveguides. We predict how, at high yet achievable on-chip optical powers, this NFM would yield a comparatively large frequency conversion efficiency, opening the door to near-unity flexible frequency conversion without cavity enhancement and resulting bandwidth constraints.

Ultra-high-Q free-space coupling to microtoroid resonators

Whispering gallery mode (WGM) microtoroid resonators are one of the most sensitive biochemical sensors in existence, capable of detecting single molecules. The main barrier for translating these devices out of the laboratory is that light is evanescently coupled into these devices though a tapered optical fiber. This hinders translation of these devices as the taper is fragile, suffers from mechanical vibration, and requires precise positioning. Here, we eliminate the need for an optical fiber by coupling light into and out from a toroid via free-space coupling and monitoring the scattered resonant light. A single long working distance objective lens combined with a digital micromirror device (DMD) was used for light injection, scattered light collection, and imaging. We obtain Q-factors as high as 1.6 × 10 8 with this approach. Electromagnetically induced transparency (EIT)-like and Fano resonances were observed in a single cavity due to indirect coupling in free space. This enables improved sensing sensitivity. The large effective coupling area (~10 μm in diameter for numerical aperture = 0.14) removes the need for precise positioning. Sensing performance was verified by combining the system with the frequency locked whispering evanescent resonator (FLOWER) approach to perform temperature sensing experiments. A thermal nonlinear optical effect was examined by tracking the resonance through FLOWER while adjusting the input power. We believe that this work will be a foundation for expanding the implementation of WGM microtoroid resonators to real-world applications.

Optimizing auxiliary laser heating for Kerr soliton microcomb generation

Auxiliary laser heating has become a widely adopted method for Kerr soliton frequency comb generation in optical microcavities, thanks to its reliable and easy-to-achieve merits for solving the thermal instability during the formation of dissipative Kerr solitons. Here, we conduct optimization of auxiliary laser heating by leveraging the distinct loss and absorption characteristics of different longitudinal and polarization cavity modes. We show that even if the auxiliary and pump lasers enter orthogonal polarization modes, their mutual photothermal balance can be efficient enough to maintain a cavity thermal equilibrium as the pump laser enters the red-detuning soliton regime, and by choosing the most suitable resonance for the auxiliary and pump lasers, the auxiliary laser power can be reduced to 20% of the pump laser and still be capable of warranting soliton generation. Moreover, we demonstrate soliton comb generation using integrated laser modules with a few milliwatt on-chip pump and auxiliary powers, showcasing the potential for further chip integration of the auxiliary laser heating method.

Absorption and scattering limits of silicon nitride integrated photonics in the visible spectrum

Visible-light photonic integrated circuits (PICs) promise scalability for technologies such as quantum information, biosensing, and scanning displays, yet extending large-scale silicon photonics to shorter wavelengths has been challenging due to the higher losses. Silicon nitride (SiN) has stood out as the leading platform for visible photonics, but the propagation losses strongly depend on the film's deposition and fabrication processes. Current loss measurement techniques cannot accurately distinguish between absorption and surface scattering, making it difficult to identify the dominant loss source and reach the platform's fundamental limit. Here we demonstrate an ultra-low loss, high-confinement SiN platform that approaches the limits of absorption and scattering across the visible spectrum. Leveraging the sensitivity of microresonators to loss, we probe and discriminate each loss contribution with unparalleled sensitivity, and derive their fundamental limits and scaling laws as a function of wavelength, film properties and waveguide parameters. Through the design of the waveguide cross-section, we show how to approach the absorption limit of the platform, and demonstrate the lowest propagation losses in high-confinement SiN to date across the visible spectrum. We envision that our techniques for loss characterization and minimization will contribute to the development of large-scale, dense PICs that redefine the loss limits of integrated platforms across the electromagnetic spectrum.

Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits

Understanding and mitigating optical loss is critical to the development of high-performance photonic integrated circuits (PICs). In particular, in high refractive index contrast compound semiconductor (III-V) PICs, surface absorption and scattering can be a significant loss mechanism, and needs to be suppressed. Here, we quantify the optical propagation loss due to surface state absorption in a suspended GaAs PIC platform, probe its origins using x-ray photoemission spectroscopy and spectroscopic ellipsometry, and show that it can be mitigated by surface passivation using alumina (Al₂O₃).

AlGaAs soliton microcombs at room temperature

Soliton mode locking in high-Q microcavities provides a way to integrate frequency comb systems. Among material platforms, AlGaAs has one of the largest optical nonlinearity coefficients, and is advantageous for low-pump-threshold comb generation. However, AlGaAs also has a very large thermo-optic effect that destabilizes soliton formation, and femtosecond soliton pulse generation has only been possible at cryogenic temperatures. Here, soliton generation in AlGaAs microresonators at room temperature is reported for the first time, to the best of our knowledge. The destabilizing thermo-optic effect is shown to instead provide stability in the high-repetition-rate soliton regime (corresponding to a large, normalized second-order dispersion parameter D₂/κ). Single soliton and soliton crystal generation with sub-milliwatt optical pump power are demonstrated. The generality of this approach is verified in a high-Q silica microtoroid where manual tuning into the soliton regime is demonstrated. Besides the advantages of large optical nonlinearity, these AlGaAs devices are natural candidates for integration with semiconductor pump lasers. Furthermore, the approach should generalize to any high-Q resonator material platform.

Hydroxyl ion absorption in on-chip high-Q resonators

Thermal silica is a common dielectric used in all-silicon photonic circuits. Additionally, bound hydroxyl ions (Si-OH) can provide a significant component of optical loss in this material on account of the wet nature of the thermal oxidation process. A convenient way to quantify this loss relative to other mechanisms is through OH absorption at 1380 nm. Here, using ultra-high-quality factor (Q-factor) thermal-silica wedge microresonators, the OH absorption loss peak is measured and distinguished from the scattering loss baseline over a wavelength range from 680 nm to 1550 nm. Record-high on-chip resonator Q-factors are observed for near-visible and visible wavelengths, and the absorption limited Q-factor is as high as 8 billion in the telecom band. Hydroxyl ion content level around 2.4 ppm (weight) is inferred from both Q measurements and by secondary ion mass spectroscopy (SIMS) depth profiling.

Quantum decoherence of dark pulses in optical microresonators

Quantum fluctuations disrupt the cyclic motions of dissipative Kerr solitons (DKSs) in nonlinear optical microresonators and consequently cause timing jitter of the emitted pulse trains. This problem is translated to the performance of several applications that employ DKSs as compact frequency comb sources. Recently, device manufacturing and noise reduction technologies have advanced to unveil the quantum properties of DKSs. Here we investigate the quantum decoherence of DKSs existing in normal-dispersion microresonators known as dark pulses. By virtue of the very large material nonlinearity, we directly observe the quantum decoherence of dark pulses in an AlGaAs-on-insulator microresonator, and the underlying dynamical processes are resolved by injecting stochastic photons into the microresonators. Moreover, phase correlation measurements show that the uniformity of comb spacing of quantum-limited dark pulses is better than 1.2 × 10^-16 and 2.5 × 10^-13 when normalized to the optical carrier frequencies and repetition frequencies, respectively. Comparing DKSs generated in different material platforms explicitly confirms the advantages of dark pulses over bright solitons in terms of quantum-limited coherence. Our work establishes a critical performance assessment of DKSs, providing guidelines for coherence engineering of chip-scale optical frequency combs.

Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform

Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible, such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume. Silicon nitride has become the leading CMOS platform for integrated soliton devices, however, it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation. Other materials have emerged such as AlN, LiNbO₃, AlGaAs and GaP that exhibit simultaneous second- and third-order nonlinearities. Here, we show that silicon carbide (SiC) -- already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics, MOSFET, and MEMS due to its wide bandgap properties, excellent mechanical properties, piezoelectricity and chemical inertia -- is a new competitive CMOS-compatible platform for nonlinear photonics. High-quality-factor microresonators (Q = 4 × 10⁶) are fabricated on 4H-SiC-on-insulator thin films, where a single soliton microcomb is generated. In addition, we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC. Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.

Linear Electro-optic Effect in Silicon Nitride Waveguides Enabled by Electric-Field Poling

Stoichiometric silicon nitride (Si₃N₄) is one of the most mature integrated photonic platforms for linear and nonlinear optical applications on-chip. However, because it is a centrosymmetric material, second-order nonlinear processes are inherently not available in Si₃N₄, limiting its use for multiple classical and quantum applications. In this work, we implement thermally assisted electric-field poling, which allows charge carrier separation in the waveguide core, leading to a depletion zone formation and the inscription of a strong electric field reaching 20 V/μm. The latter results in an effective second-order susceptibility (χ⁽²⁾) inside the Si₃N₄ waveguide, making linear electro-optic modulation accessible on the platform for the first time. We develop a numerical model for simulating the poling process inside the waveguide and use it to calculate the diffusion coefficient and the concentration of the charge carriers responsible for the field formation. The charge carrier concentration, as well as the waveguide core size, is found to play a significant role in determining the achievable effective nonlinearity experienced by the optical mode inside the waveguide. Current findings establish a strong groundwork for further advancement of χ⁽²⁾-based devices on Si₃N₄.

Preclinical Studies of Natural Products Targeting the Gut Microbiota: Beneficial Effects on Diabetes

Diabetes mellitus (DM) is a serious metabolic disease characterized by persistent hyperglycemia, with a continuously increasing morbidity and mortality. Although traditional treatments including insulin and oral hypoglycemic drugs maintain blood glucose levels within the normal range to a certain extent, there is an urgent need to develop new drugs that can effectively improve glucose metabolism and diabetes-related complications. Notably, accumulated evidence implicates that the gut microbiota is unbalanced in DM individuals and is involved in the physiological and pathological processes of this metabolic disease. In this review, we introduce the molecular mechanisms by which the gut microbiota contributes to the development of DM. Furthermore, we summarize the preclinical studies of bioactive natural products that exert antidiabetic effects by modulating the gut microbiota, aiming to expand the novel therapeutic strategies for DM prevention and management.

New Frontiers in Novel Optical Materials and Devices

Optical materials can be defined as materials that are used to alter and control electromagnetic radiation in the ultraviolet, visible or infrared spectral regions [...]