High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber

Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi2O2S Nanosheets by Defect Engineering

Low-dimensional bismuth oxychalcogenides have shown promising potential in optoelectronics due to their high stability, photoresponse, and carrier mobility. However, the relevant studies on deep understanding for Bi2O2S is quite limited. Here, comprehensive experimental and computational investigations are conducted in the regulated band structure, nonlinear optical (NLO) characteristics, and carrier dynamics of Bi2O2S nanosheets via defect engineering, taking O vacancy (OV) and substitutional Se doping as examples. As the OV continuously increased to ≈35%, the optical bandgaps progressively narrow from ≈1.21 to ≈0.81 eV and NLO wavelengths are extended to near-infrared regions with enhanced saturable absorption. Simultaneously, the relaxation processes are effectively accelerated from tens of picoseconds to several picoseconds, as the generated defect energy levels can serve as both additional absorption cross-sections and fast relaxation channels supported by theoretical calculations. Furthermore, substitutional Se doping in Bi2O2S nanosheets also modulate their optical properties with the similar trends. As a proof-of-concept, passively mode-locked pulsed lasers in the ≈1.0 µm based on the defect-rich samples (≈35% OV and ≈50% Se-doping) exhibit excellent performance. This work deepens the insight of defect functions on optical properties of Bi2O2S nanosheets and provides new avenues for designing advanced photonic devices based on low-dimensional bismuth oxychalcogenides.

Nonlinear Optical Saturable Absorption Properties of 2D VP Nanosheets and Application as SA in a Passively Q-Switched Nd:YVO4 Laser

Two-dimensional (2D) violet phosphorus (VP) plays a significant role in the applications of photonic and optoelectronic devices due to its unique optical and electrical properties. The ultrafast carrier dynamics and nonlinear optical absorption properties were systematically investigated here. The intra- and inter-band ultrafast relaxation times of 2D VP nanosheets were measured to be ~6.83 ps and ~62.91 ps using the pump-probe method with a probe laser operating at 1.03 μm. The nonlinear absorption coefficient βeff, the saturation intensity Is, the modulation depth ΔR, and the nonsaturable loss were determined to be -2.18 × 104 cm/MW, 329 kW/cm2, 6.3%, and 9.8%, respectively, by using the Z-scan and I-scan methods, indicating the tremendous saturable absorption property of 2D VP nanosheets. Furthermore, the passively Q-switched Nd:YVO4 laser was realized with the 2D VP nanosheet-based SA, in which the average output power of 700 mW and the pulse duration of 478 ns were obtained. These results effectively reveal the nonlinear optical absorption characteristics of VP nanosheets, demonstrating their outstanding light-manipulating capabilities and providing a basis for the applications of ultrafast optical devices. Our results verify the excellent saturable absorption properties of 2D VP, paving the way for its applications in pulsed laser generation.

Ultrafast laser state active controlling based on anisotropic quasi-1D material

Laser state active controlling is challenging under the influence of inherent loss and other nonlinear effects in ultrafast systems. Seeking an extension of degree of freedom in optical devices based on low-dimensional materials may be a way forward. Herein, the anisotropic quasi-one-dimensional layered material Ta2PdS6 was utilized as a saturable absorber to modulate the nonlinear parameters effectively in an ultrafast system by polarization-dependent absorption. The polarization-sensitive nonlinear optical response facilitates the Ta2PdS6-based mode-lock laser to sustain two types of laser states, i.e., conventional soliton and noise-like pulse. The laser state was switchable in the single fiber laser with a mechanism revealed by numerical simulation. Digital coding was further demonstrated in this platform by employing the laser as a codable light source. This work proposed an approach for ultrafast laser state active controlling with low-dimensional material, which offers a new avenue for constructing tunable on-fiber devices.

Polaronic Nonlinear Optical Response and All-Optical Switching Based on an Ionic Metal Oxide

It has been well-established that light-matter interactions, as manifested by diverse linear and nonlinear optical (NLO) processes, are mediated by real and virtual particles, such as electrons, phonons, and excitons. Polarons, often regarded as electrons dressed by phonons, are known to contribute to exotic behaviors of solids, from superconductivity to photocatalysis, while their role in materials' NLO response remains largely unexplored. Here, the NLO response mediated by polarons supported by a model ionic metal oxide, TiO2, is examined. It is observed that the formation of polaronic states within the bandgap results in a dramatic enhancement of NLO absorption coefficient by over 130 times for photon energies in the sub-bandgap regions, characterized by a 100 fs scale ultrafast response that is typical for thermalized electrons in metals. The ultrafast polaronic NLO response is then exploited for the development of all-optical switches for ultrafast pulse generation in near-infrared (NIR) fiber lasers and modulation of optical signal in the telecommunication band based on evanescent interaction on a planar waveguide chip. These results suggest that the polarons supported by dielectric ionic oxides can fill the gaps left by dielectric and metallic materials and serve as a novel platform for nonlinear photonic applications.

Sub-60-fs mode-locked Tm,Ho:CaYLuAlO4 laser at 2.05 µm

Tm,Ho:CaYLuAlO4 (Tm,Ho:CALYLO) crystal has wide emission spectra both for π-polarization and σ-polarization, showing significant potential for the generation of ultrashort pulses. Here, a widely tunable and passively mode-locked laser operation based on Tm,Ho:CALYLO crystal under two polarizations was demonstrated for what we believe to be the first time ever. For π-polarization, a maximum output power of 1.52 W and a tuning range of 255.3 nm were achieved in the continuous wave (CW) regime. In the mode-locked regime, a pulse duration of 68 fs and an average output power of 228 mW were achieved upon GaSb-based semiconductor saturable absorber mirror (SESAM). As for σ-polarization, a broader tuning range of 267.1 nm was realized, leading to the shorter pulse duration of 58 fs at 79.7 MHz repetition rate.

A hidden phase uncovered by ultrafast carrier dynamics in thin Bi2O2Se

Bi2O2Se has attracted intensive attention due to its potential in electronics, optoelectronics, and ferroelectric applications. Despite that, there have only been a handful of experimental studies based on ultrafast spectroscopy to elucidate the carrier dynamics in Bi2O2Se thin films. Besides, different groups have reported various ultrafast timescales and associated mechanisms across films of different thicknesses. A comprehensive understanding in relation to thickness and fluence is still lacking. In this work, we have systematically explored the thickness-dependent Raman spectroscopy and ultrafast carrier dynamics in chemical vapor deposition (CVD)-grown Bi2O2Se thin films on a mica substrate with thicknesses varying from 22.44 nm down to 4.62 nm in both low and high pump fluence regions. Combining the thickness dependence and fluence dependence of the slow decay time, we demonstrate a hidden photoinduced ferroelectric transition in the thinner (<8 nm) Bi2O2Se films below the material damage thresholds, influenced by substrate-induced compressive strain and far-from-equilibrium excitation. Moreover, this transition can be manifested at high electronic excitation densities. Our results deepen the understanding of the interplay between the ferroelectric phase and semiconducting characteristics of Bi2O2Se thin films, offering potential applications in optoelectronic devices that benefit from the ferroelectric transition.

Ge-polymer bridge waveguide for mode-locked laser pulse generation

A Ge-polymer hybrid waveguide is sandwiched between an indium phosphide (InP) reflective gain chip and a fiber Bragg grating (FBG) to construct a laser system. The hybrid waveguide serves as a bridge between the gain chip and the fiber with tailored mode-field matching at both facets. The 50-nm amorphous Ge (α-Ge) layer shows a nonlinear absorption effect at 1550 nm. The hybrid waveguide is further verified by a femtosecond laser transmission experiment to show the pulse width compression effect. Such waveguide is then integrated inside the laser cavity as a passive saturable absorber to modulate the longitudinal modes for a pulsed output. This polymer-bridged mode-locked laser adopts an InP gain chip for compact assembly and also a FBG with a flexible length to adjust the pulse repetition rate. The mode-locked laser output around the designed 50 MHz repetition rate is demonstrated. The pulse width is measured as 147 ps, and the signal-to-noise ratio is larger than 50 dB. This work introduces a "ternary" mode-locked laser system, taking advantage of discrete photonic components bridged by a polymer-based waveguide. It also proves the feasibility of applying α-Ge films as practical and low-cost saturable absorbers in photonic devices.

Transient breathing dynamics during extinction of dissipative solitons in mode-locked fiber lasers

The utilization of the dispersive Fourier transformation approach has enabled comprehensive observation of the birth process of dissipative solitons in fiber lasers. However, there is still a dearth of deep understanding regarding the extinction process of dissipative solitons. In this study, we have utilized a combination of experimental and numerical techniques to thoroughly examine the breathing dynamics of dissipative solitons during the extinction process in an Er-doped mode-locked fiber laser. The results demonstrate that the transient breathing dynamics have a substantial impact on the extinction stage of both steady-state and breathing-state dissipative solitons. The duration of transient breathing exhibits a high degree of sensitivity to variations in pump power. Numerical simulations are utilized to produce analogous breathing dynamics within the framework of a model that integrates equations characterizing the population inversion in a mode-locked laser. These results corroborate the role of Q-switching instability in the onset of breathing oscillations. Furthermore, these findings offer new possibilities for the advancement of various operational frameworks for ultrafast lasers.

Momentum and thickness dependent excitonic and plasmonic properties of 2D h-BN and MoS2 restored from supercell calculations

The comprehension and manipulation of the propagation characteristics of elementary excitations, such as excitons and plasmons, play a crucial role in tailoring the optical properties of low-dimensional materials. To this end, investigations into the momentum (q) dispersions of excitons and plasmons in confined geometry are required fundamentally. Due to advancements in momentum-resolved spectroscopy techniques, research on the q-dependent excitons or plasmons in low-dimensional materials is beginning to emerge. However, previous simulations of low-dimensional systems are adversely affected by the artificial vacuum spacing employed in the supercell approximation. Furthermore, the significance of layer thickness in determining the excitonic and plasmonic characteristics of two-dimensional (2D) materials remains largely unexplored in the context of finite q. Therefore, an extensive investigation into the momentum and thickness dependent behaviours of both excitons and plasmons in 2D materials, which are free of the influence of vacuum spacing, is lacking at present. In this article, we develop a restoration procedure to eliminate the influence of vacuum spacing, and obtain a comprehensive picture of momentum and layer thickness dependent excitonic and plasmonic properties of 2D hexagonal boron nitride (h-BN) and molybdenum disulphide (MoS2). Our restored simulations are not only found to be in excellent agreement with available experiments, but also elucidate the roles of momentum and layer thickness in the excitonic and plasmonic properties of 2D h-BN and MoS2. We further unveil the dimensionality effect on the dispersion characteristics of excitons and plasmons in h-BN and MoS2. Our contribution will hopefully promote the understanding of the elementary excitations propagating in low-dimensional materials and pave the way for next-generation nanophotonic and optoelectronic devices.

SnS2 as a Saturable Absorber for Mid-Infrared Q-Switched Er:SrF2 Laser

Two-dimensional (2D) materials own unique band structures and excellent optoelectronic properties and have attracted wide attention in photonics. Tin disulfide (SnS₂), a member of group IV-VI transition metal dichalcogenides (TMDs), possesses good environmental optimization, oxidation resistance, and thermal stability, making it more competitive in application. By using the intensity-dependent transmission experiment, the saturable absorption properties of the SnS₂ nanosheet nearly at 3 μm waveband were characterized by a high modulation depth of 32.26%. Therefore, a few-layer SnS₂ was used as a saturable absorber (SA) for a bulk Er:SrF₂ laser to research its optical properties. When the average output power was 140 mW, the passively Q-switched laser achieved the shortest pulse width at 480 ns, the optimal single pulse energy at 3.78 µJ, and the highest peak power at 7.88 W. The results of the passively Q-switched laser revealed that few-layer SnS₂ had an admirable non-linear optical response at near 3 μm mid-infrared solid-state laser.

Target-Driven Design of Deep-UV Nonlinear Optical Materials via Interpretable Machine Learning

The development of a data-driven science paradigm is greatly revolutionizing the process of materials discovery. Particularly, exploring novel nonlinear optical (NLO) materials with the birefringent phase-matching ability to deep-ultraviolet (UV) region is of vital significance for the field of laser technologies. Herein, a target-driven materials design framework combining high-throughput calculations (HTC), crystal structure prediction, and interpretable machine learning (ML) is proposed to accelerate the discovery of deep-UV NLO materials. Using a dataset generated from HTC, an ML regression model for predicting birefringence is developed for the first time, which exhibits a possibility of achieving fast and accurate prediction. Essentially, crystal structures are adopted as the only known input of this model to establish a close structure-property relationship mapping birefringence. Utilizing the ML-predicted birefringence which can affect the shortest phase-matching wavelength, a full list of potential chemical compositions based on an efficient screening strategy is identified. Further, eight structures with good stability are discovered to show potential applications in the deep-UV region, owing to their promising NLO-related properties. This study provides a new insight into the discovery of NLO materials and this design framework can identify desired materials with high performances in the broad chemical space at a low computational cost.

Ultrastrong Optical Harmonic Generations in Layered Platinum Disulfide in the Mid-Infrared

Nonlinear optical activities (e.g., harmonic generations) in two-dimensional (2D) layered materials have attracted much attention due to the great promise in diverse optoelectronic applications such as nonlinear optical modulators, nonreciprocal optical device, and nonlinear optical imaging. Exploration of nonlinear optical response (e.g., frequency conversion) in the infrared, especially the mid-infrared (MIR) region, is highly desirable for ultrafast MIR laser applications ranging from tunable MIR coherent sources, MIR supercontinuum generation, and MIR frequency-comb-based spectroscopy to high harmonic generation. However, nonlinear optical effects in 2D layered materials under MIR pump are rarely reported, mainly due to the lack of suitable 2D layered materials. Van der Waals layered platinum disulfide (PtS₂) with a sizable bandgap from the visible to the infrared region is a promising candidate for realizing MIR nonlinear optical devices. In this work, we investigate the nonlinear optical properties including third-and fifth-harmonic generation (THG and FHG) in thin layered PtS₂ under infrared pump (1550-2510 nm). Strikingly, the ultrastrong third-order nonlinear susceptibility χ⁽³⁾(-3ω;ω,ω,ω) of thin layered PtS₂ in the MIR region was estimated to be over 10^-18 m²/V², which is about one order of that in traditional transition metal chalcogenides. Such excellent performance makes air-stable PtS₂ a potential candidate for developing next-generation MIR nonlinear photonic devices.

Modulating the nonlinear absorption response of SnOx thin films via phase engineering

Phase (composition) is known to play a key role in determining the electronic and optical properties of amorphous oxide semiconductors. In this work, modulating the ultrafast nonlinear optical (NLO) response of SnO₂ and SnO thin films by tuning oxygen partial pressure during film sputtering is explored. Femtosecond Z-scan results demonstrate that intermediate phases have no profound impact on the two-photon absorption (TPA) response of SnO₂ and SnO films. Interestingly, the magnitude of the effective nonlinear absorption coefficient (β_eff) of both intermediate SnO_2-x and SnO_x are enhanced after the change of Sn²⁺/Sn⁴⁺ composition ratio, as measured by picosecond Z-scan technique. Femtosecond degenerate pump-probe measurements show that intermediate phases accelerate the carrier trapping and improve the defect-related carrier absorption in SnO_x (SnO-rich) film, while intermediate phase suppress the TPA response of SnO_2-x (SnO₂-rich) films, therefore carrier-induced absorption dominates the NLO behavior of SnO_2-x film on picosecond regime. Our results indicate a simple and effective way to modulate the NLO response of transparent conductive oxide SnO₂ and SnO.

Dynamic control of the mode-locked fiber laser using a GO/PS modulator

This Letter proposes a novel, to the best of our knowledge, transistor-like optical fiber modulator composed of graphene oxide (GO) and polystyrene (PS) microspheres. Unlike previously proposed schemes based on waveguides or cavity enhancement, the proposed method can directly enhance the photoelectric interaction with the PS microspheres to form a light local field. The designed modulator exhibits a distinct optical transmission change (62.8%), with a power consumption of <10 nW. Such low power consumption enables electrically controllable fiber lasers to be switched in various operational regimes, including continuous wave (CW), Q switched mode-locked (QML), and mode-locked (ML). With this all-fiber modulator, the pulse width of the mode-locked signal can be compressed to 12.9 ps, and the corresponding repetition rate is 21.4 MHz.

Interfacially confined preparation of fumaronitrile-based nanofilms exhibiting broadband saturable absorption properties

Interfacial nanofilms with nonlinear optical (NLO) properties were prepared via confined dynamic condensation of 4,4'-methylenedianiline (MDA) with the synthesized 2,3-bis(4-(bis(4-formylphenyl)amino)phenyl)fumaronitrile (BTFA). Investigated using the open-aperture Z-scan technique, BTFA showed reverse saturable absorption ascribed to the synergetic mechanisms of two-photon and excited-state absorption. In contrast, the as-prepared nanofilms demonstrated broadband saturable absorption within the spectral range of 720∼1700 nm. The characteristics of nonlinear absorption coefficient (β) decreased along with increasing the incident pulse intensity. Taking advantage of the flexibility and post-machinability properties, the folding layers of the nanofilms offered the feasibility to fine-tune the specific NLO responses. The optimal β value was found to be -10.1 cm/MW for eight-layer nanofilm as well as the normalized transmittance increased up to 35-fold at 800 nm. Utilized as a conceptual saturable absorber, the representative modulation depth and saturation intensity were observed to be around 2.4% and 7.37 GW/cm² at 800 nm, respectively, comparable to traditional two-dimensional (2D) materials. Aiming to clarify the possible underlying physical processes, a four-level model was employed to illustrate the fast relaxation of the excited states. Present work demonstrates that proper design of building blocks combined with interfacially confined dynamic condensation enables rational development of high-performance NLO materials.