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Liu X, Erbas B, Conde-Rubio A, Rivano N, Wang Z, Jiang J, Bienz S, Kumar N, Sohier T, Penedo M, Banerjee M, Fantner G, Zenobi R, Marzari N, Kis A, Boero G, Brugger J. Deterministic grayscale nanotopography to engineer mobilities in strained MoS 2 FETs. Nat Commun 2024; 15:6934. [PMID: 39138213 PMCID: PMC11322165 DOI: 10.1038/s41467-024-51165-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Accepted: 07/30/2024] [Indexed: 08/15/2024] Open
Abstract
Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective means to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van der Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS2 FETs under tensile strain achieve an 8-fold increase in on-state current, reaching mobilities of 185 cm²/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices.
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Affiliation(s)
- Xia Liu
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland.
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China.
| | - Berke Erbas
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Ana Conde-Rubio
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
- Institute of Materials Science of Barcelona ICMAB-CSIC, Campus UAB, 08193, Bellaterra, Spain
| | - Norma Rivano
- Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Zhenyu Wang
- Laboratory of Nanoscale Electronics and Structures, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Jin Jiang
- Laboratory of Quantum Physics, Topology and Correlations, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Siiri Bienz
- Department of Chemistry and Applied Biosciences, ETH Zurich, 8093, Zurich, Switzerland
| | - Naresh Kumar
- Department of Chemistry and Applied Biosciences, ETH Zurich, 8093, Zurich, Switzerland
| | - Thibault Sohier
- Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, Montpellier, France
| | - Marcos Penedo
- Laboratory for Bio- and Nano- Instrumentation, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Mitali Banerjee
- Laboratory of Quantum Physics, Topology and Correlations, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Georg Fantner
- Laboratory for Bio- and Nano- Instrumentation, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Renato Zenobi
- Department of Chemistry and Applied Biosciences, ETH Zurich, 8093, Zurich, Switzerland
| | - Nicola Marzari
- Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
- Laboratory for Materials Simulations, Paul Scherrer Institute, 5232, Villigen, Switzerland
| | - Andras Kis
- Laboratory of Nanoscale Electronics and Structures, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Giovanni Boero
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Juergen Brugger
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland.
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Vashishtha P, Abidi IH, Giridhar SP, Verma AK, Prajapat P, Bhoriya A, Murdoch BJ, Tollerud JO, Xu C, Davis JA, Gupta G, Walia S. CVD-Grown Monolayer MoS 2 and GaN Thin Film Heterostructure for a Self-Powered and Bidirectional Photodetector with an Extended Active Spectrum. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31294-31303. [PMID: 38838350 DOI: 10.1021/acsami.4c03902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Photodetector technology has evolved significantly over the years with the emergence of new active materials. However, there remain trade-offs between spectral sensitivity, operating energy, and, more recently, an ability to harbor additional features such as persistent photoconductivity and bidirectional photocurrents for new emerging application areas such as switchable light imaging and filter-less color discrimination. Here, we demonstrate a self-powered bidirectional photodetector based on molybdenum disulfide/gallium nitride (MoS2/GaN) epitaxial heterostructure. This fabricated detector exhibits self-powered functionality and achieves detection in two discrete wavelength bands: ultraviolet and visible. Notably, it attains a peak responsivity of 631 mAW-1 at a bias of 0V. The device's response to illumination at these two wavelengths is governed by distinct mechanisms, activated under applied bias conditions, thereby inducing a reversal in the polarity of the photocurrent. This work underscores the feasibility of self-powered and bidirectional photocurrent detection but also opens new vistas for technological advancements for future optoelectronic, neuromorphic, and sensing applications.
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Affiliation(s)
- Pargam Vashishtha
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Irfan H Abidi
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Sindhu P Giridhar
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Ajay K Verma
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Pukhraj Prajapat
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Ankit Bhoriya
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Billy J Murdoch
- RMIT Microscopy and Microanalysis Facility, RMIT University, Melbourne 3000, Australia
| | - Jonathan O Tollerud
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Chenglong Xu
- Micro Nano Research Facility, RMIT University, Melbourne 3000, Australia
| | - Jeff A Davis
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Govind Gupta
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
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3
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Liu F, Zong J, Liang Y, Zhang M, Song K, Mi L, Feng J, Xiong S, Xi B. Ordered Vacancies as Sodium Ion Micropumps in Cu-Deficient Copper Indium Diselenide to Enhance Sodium Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403131. [PMID: 38547509 DOI: 10.1002/adma.202403131] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Revised: 03/19/2024] [Indexed: 04/05/2024]
Abstract
Unordered vacancies engineered in host anode materials cannot well maintain the uniform Na+ adsorbed and possibly render the local structural stress intense, resulting in electrode peeling and battery failure. Here, the indium is first introduced into Cu2Se to achieve the formation of CuInSe2. Next, an ion extraction strategy is employed to fabricate Cu0.54In1.15Se2 enriched with ordered vacancies by spontaneous formation of defect pairs. Such ordered defects, compared with unordered ones, can serve as myriad sodium ion micropumps evenly distributing in crystalline host to homogenize the adsorbed Na+ and the generated volumetric stress during the electrochemistry. Furthermore, Cu0.54In1.15Se2 is indeed proved by the calculations to exhibit smaller volumetric variation than the counterpart with unordered vacancies. Thanks to the distinct ordered vacancy structure, the material exhibits a highly reversible capacity of 428 mAh g-1 at 1 C and a high-rate stability of 311.7 mAh g-1 at 10 C after 5000 cycles when employed as an anode material for Sodium-ion batteries (SIBs). This work presents the promotive effect of ordered vacancies on the electrochemistry of SIBs and demonstrates the superiority to unordered vacancies, which is expected to extend it to other metal-ion batteries, not limited to SIBs to achieve high capacity and cycling stability.
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Affiliation(s)
- Fan Liu
- School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250100, China
| | - Jingui Zong
- School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250100, China
| | - Yazhan Liang
- School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250100, China
| | - Mingzhe Zhang
- School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250100, China
- School of Materials Science and Engineering, Shandong University, Jinan, 250061, China
| | - Kepeng Song
- School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250100, China
| | - Liwei Mi
- Center for Advanced Materials Research, Zhongyuan University of Technology, Zhengzhou, 450007, P.R. China
| | - Jinkui Feng
- School of Materials Science and Engineering, Shandong University, Jinan, 250061, China
| | - Shenglin Xiong
- School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250100, China
| | - Baojuan Xi
- School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250100, China
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4
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Luo Y, Lu H, Huang J, He L, Chen H, Yuan C, Xu Y, Zeng B, Dai L. A Molecular Coordination Strategy for Regulating the Interface of MoS 2 Field Effect Transistors. J Am Chem Soc 2024; 146:9709-9720. [PMID: 38546406 DOI: 10.1021/jacs.3c13696] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Chemically modifying monolayer two-dimensional transition metal dichalcogenides (TMDs) with organic molecules provides a wide range of possibilities to regulate the electronic and optoelectronic performance of both materials and devices. However, it remains challenging to chemically attach organic molecules to monolayer TMDs without damaging their crystal structures. Herein, we show that the Mo atoms of monolayer MoS2 (1L-MoS2) in defect states can coordinate with both catechol and 1,10-phenanthroline (Phen) groups, affording a facile route to chemically modifying 1L-MoS2. Through the design of two isomeric molecules (LA2 and LA5) comprising catechol and Phen groups, we show that attaching organic molecules to Mo atoms via coordinative bonds has no negative effect on the crystal structure of 1L-MoS2. Both theoretical calculation and experiment results indicate that the coordinative strategy is beneficial for (i) repairing sulfur vacancies and passivating defects; (ii) achieving a long-term and stable n-doping effect; and (iii) facilitating the electron transfer. Field effect transistors (FETs) based on the coordinatively modified 1L-MoS2 show high electron mobilities up to 120.3 cm2 V-1 s-1 with impressive current on/off ratios over 109. Our results indicate that coordinatively attaching catechol- or Phen-bearing molecules may be a general method for the nondestructive modification of TMDs.
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5
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Ullberg N, Filoramo A, Campidelli S, Derycke V. In Operando Study of Charge Modulation in MoS 2 Transistors by Excitonic Reflection Microscopy. ACS NANO 2024; 18:9886-9894. [PMID: 38547872 PMCID: PMC11008581 DOI: 10.1021/acsnano.3c09337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Revised: 02/16/2024] [Accepted: 02/23/2024] [Indexed: 04/10/2024]
Abstract
Monolayers of transition metal dichalcogenides (2D TMDs) experience strong modulation of their optical properties when the charge density is varied. Indeed, the transition from carriers composed mostly of excitons at low electron density to a situation in which trions dominate at high density is accompanied by a significant evolution of both the refractive index and the extinction coefficient. Using optical interference reflection microscopy at the excitonic wavelength, this (n, κ)-q relationship can be exploited to directly image the electron density in operating TMD devices. In this work, we show how this technique, which we call XRM (excitonic reflection microscopy), can be used to study charge distribution in MoS2 field-effect transistors with subsecond throughput, in wide-field mode. Complete maps of the charge distribution in the transistor channel at any drain and gate bias polarization point (VDS, VGS) are obtained, at ∼3 orders of magnitude faster than with scanning probe techniques such as KPFM. We notably show how the advantages of XRM enable real-time mapping of bias-dependent charge inhomogeneities, the study of resistive delays in 2D polycrystalline networks, and the evaluation of the VDS vs VGS competition to control the charge distribution in active devices.
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Affiliation(s)
- Nathan Ullberg
- Université Paris-Saclay, CEA,
CNRS, NIMBE, LICSEN, 91191 Gif-sur-Yvette, France
| | - Arianna Filoramo
- Université Paris-Saclay, CEA,
CNRS, NIMBE, LICSEN, 91191 Gif-sur-Yvette, France
| | - Stéphane Campidelli
- Université Paris-Saclay, CEA,
CNRS, NIMBE, LICSEN, 91191 Gif-sur-Yvette, France
| | - Vincent Derycke
- Université Paris-Saclay, CEA,
CNRS, NIMBE, LICSEN, 91191 Gif-sur-Yvette, France
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6
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Zhang Q, Zhang D, Cao B, Poddar S, Mo X, Fan Z. Improving the Operational Lifetime of Metal-Halide Perovskite Light-Emitting Diodes with Dimension Control and Ligand Engineering. ACS NANO 2024; 18:8557-8570. [PMID: 38482819 DOI: 10.1021/acsnano.3c13136] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Perovskite light-emitting diodes (LEDs) have emerged as one of the most propitious candidates for next-generation lighting and displays, with the highest external quantum efficiency (EQE) of perovskite LEDs already surpassing the 20% milestone. However, the further development of perovskite LEDs primarily relies on addressing operational instability issues. This Perspective examines some of the key factors that impact the lifetime of perovskite LED devices and some representative reports on recent advancements aimed at improving the lifetime. Our analysis underscores the significance of "nano" strategies in achieving long-term stable perovskite LEDs. Significant efforts must be directed toward proper device encapsulation, perovskite material passivation, interfacial treatment to address environment-induced material instability, bias-induced phase separation, and ion migration issues.
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Affiliation(s)
- Qianpeng Zhang
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology; Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology; Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Bryan Cao
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Swapnadeep Poddar
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Xiaoliang Mo
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology; Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
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7
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Mondal S, Basak D. Excitonic Rydberg States in a Trilayer to Monolayer H 2-Aided CVD-Grown Large-Area MoS 2 Film with Excellent UV to Visible Broad Band Photodetection Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2940-2953. [PMID: 38176105 DOI: 10.1021/acsami.3c15655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
The diverse nature of optoelectronic properties of few-layer or monolayer MoS2 is generally dominated by A and B excitons. Occasionally, strong Coulombic interactions within the 2D monolayer led to the creation of hydrogen-like Rydberg states of excitons in MoS2 similar to other 2D monolayers. In this paper, a simple process is used to convert trilayer MoS2 films to a monolayer by introducing H2 gas during chemical vapor deposition. Remarkably, alongside the usual A, B excitons, and A- trion, the appearance of the Rydberg states is evidenced by photoluminescence spectra even at room temperature; also, there is an increase in their areal percentage with an increase in H2 content. The s-type excited Rydberg states up to the fourth order (n = 5) and third order (n = 4) of A and B excitons, respectively, have been probed from the photoluminescence spectra at 93 K. Unprecedentedly, the first-order derivative of room-temperature photocurrent spectrum reveals the Rydberg states concurrently and elaboratively. Furthermore, the large-area MoS2 films exhibit photoresponse in a broad UV to visible region with excellent photosensitivity (∼102) toward both UV and visible lights. Not only does this provide a profound understanding of the excitonic Rydberg states but also highlights the considerable potential of large-area monolayer MoS2 overcoming the difficulty of tiny flake-related 2D device endeavors.
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Affiliation(s)
- Sourav Mondal
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Durga Basak
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
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8
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Yue Y, Yang R, Zhang W, Cheng Q, Zhou H, Zhang Y. Cesium Cyclopropane Acid-Aided Crystal Growth Enables Efficient Inorganic Perovskite Solar Cells with a High Moisture Tolerance. Angew Chem Int Ed Engl 2024; 63:e202315717. [PMID: 37991408 DOI: 10.1002/anie.202315717] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Revised: 11/08/2023] [Accepted: 11/21/2023] [Indexed: 11/23/2023]
Abstract
While all-inorganic halide perovskites (iHPs) are promising photovoltaic materials, the associated water sensitivity of iHPs calls for stringent humidity control to reach satisfactory photovoltaic efficiencies. Herein, we report a moisture-insensitive perovskite formation route under ambient air for CsPbI2 Br-based iHPs via cesium cyclopropane acids (C3 ) as a compound introducer. With this approach, appreciably enhanced crystallization quality and moisture tolerance of CsPbI2 Br are attained. The improvements are attributed to the modified evaporation enthalpy of the volatile side product of DMA-acid initiated by Cs-acids. As such, the water-involving reaction is directed toward the DMA-acids, leaving the target CsPbI2 Br perovskites insensitive to ambient humidity. We highlight that by controlling the C3 concentration, the dependence of power conversion efficiency (PCE) in CsPbI2 Br devices on the humidity level during perovskite film formation becomes favorably weakened, with the PCEs remaining relatively high (>15 %) associated with improved device stability for RH levels changed from 25 % to 65 %. The champion solar cells yield an impressive PCE exceeding 17 %, showing small degradations (<10 %) for 2000 hours of shell storage and 300 hours of 85/85 (temperature/humidity) tests. The demonstrated C3 -based strategy provides an enabler for improving the long-sought moisture-stability of iHPs toward high photovoltaic device performance.
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Affiliation(s)
- Yaochang Yue
- Heeger Research and Development Center, School of Chemistry, Beijing Advanced Innovation Center for Biomedical Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Rongshen Yang
- Heeger Research and Development Center, School of Chemistry, Beijing Advanced Innovation Center for Biomedical Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Weichao Zhang
- Heeger Research and Development Center, School of Chemistry, Beijing Advanced Innovation Center for Biomedical Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Qian Cheng
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Huiqiong Zhou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yuan Zhang
- Heeger Research and Development Center, School of Chemistry, Beijing Advanced Innovation Center for Biomedical Engineering, Beihang University, Beijing, 100191, P. R. China
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9
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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10
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Ahn IH, Lee DJ, Kim DY. Auxiliary Diagnostic Signal for Deep-Level Detection. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2866. [PMID: 37947711 PMCID: PMC10648165 DOI: 10.3390/nano13212866] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 10/23/2023] [Accepted: 10/28/2023] [Indexed: 11/12/2023]
Abstract
We propose and demonstrate that temperature-dependent curve-fitting error values of the Schottky diode I-V curve in the forward regime can be an auxiliary diagnostic signal as the temperature-scan Capacitance DLTS (CDLTS) signals and helps to work time-efficiently with high accuracy when using the Laplace Transform (LT)-DLTS or Isothermal Capacitance transient spectroscopy (ICTS) method. Using Be-doped GaAs showing overlapping DLTS signals, we verify that the LT-DLTS or ICTS analysis within a specific temperature range around the characteristic temperature Tpeak coincides well with the results of the CDLTS and Fourier Transform DLTS performed within the whole temperature range. In particular, we found that the LT-DLTS signals appeared intensively around Tpeak, and we confirmed it with the ICTS result. The occurrence of the curve fitting error signal is attributed to the relatively increased misfit error by the increased thermal emission from the deep-level trap in the case near the Tpeak, because the applied transport model excludes defect characteristics.
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Affiliation(s)
- Il-Ho Ahn
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (D.J.L.); (D.Y.K.)
| | - Dong Jin Lee
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (D.J.L.); (D.Y.K.)
| | - Deuk Young Kim
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (D.J.L.); (D.Y.K.)
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
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Zhu Y, Lim J, Zhang Z, Wang Y, Sarkar S, Ramsden H, Li Y, Yan H, Phuyal D, Gauriot N, Rao A, Hoye RLZ, Eda G, Chhowalla M. Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide. ACS NANO 2023. [PMID: 37418552 PMCID: PMC10373523 DOI: 10.1021/acsnano.3c02103] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2023]
Abstract
Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this work, we provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS2 by annealing at 600 °C in an argon/hydrogen (95%/5%) atmosphere. Synchrotron X-ray photoelectron spectroscopy shows that a Mo 3d5/2 core peak at 230.1 eV emerges in the annealed MoS2 associated with nonstoichiometric MoSx (0 < x < 2), and Raman spectroscopy shows an enhancement of the ∼380 cm-1 peak that is attributed to sulfur vacancies. At sulfur vacancy densities of ∼1.8 × 1014 cm-2, we observe a defect peak at ∼1.72 eV (referred to as LXD) at room temperature in the photoluminescence (PL) spectrum. The LXD peak is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). Time-resolved PL measurements reveal that the lifetime of defect-mediated LXD emission is longer than that of band edge excitons, both at room and low temperatures (∼2.44 ns at 8 K). The LXD peak can be suppressed by annealing the defective MoS2 in sulfur vapor, which indicates that it is possible to passivate the vacancies. Our results provide insights into how excitonic and defect-mediated PL emissions in MoS2 are influenced by sulfur vacancies at room and low temperatures.
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Affiliation(s)
- Yiru Zhu
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Juhwan Lim
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
- Cavendish Laboratory, University of Cambridge, Cambridge CB2 1TN, United Kingdom
| | - Zhepeng Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
| | - Yan Wang
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Soumya Sarkar
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Hugh Ramsden
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Yang Li
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Han Yan
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Dibya Phuyal
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
- Division of Material and Nano Physics, Department of Applied Physics, KTH Royal Institute of Technology, Stockholm, SE-106 91, Sweden
| | - Nicolas Gauriot
- Cavendish Laboratory, University of Cambridge, Cambridge CB2 1TN, United Kingdom
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, Cambridge CB2 1TN, United Kingdom
| | - Robert L Z Hoye
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford OX1 3QR, United Kingdom
| | - Goki Eda
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117542, Singapore
| | - Manish Chhowalla
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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