1
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Liu D, Pei F, Wang S, Chen X, Yuan Y, Zhao J, Guo J, Wang T, Li L, Kan X, Liao Z, Song D, Liu X, Fang Y, Wang S, Zhou S, Qiu ZQ, Huang H, Yang M, Li Q. Manipulation of Exchange Bias in Two-Dimensional van der Waals Ferromagnet Near Room Temperature. ACS NANO 2024. [PMID: 39146501 DOI: 10.1021/acsnano.4c09142] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/17/2024]
Abstract
As a host for exchange bias (EB), van der Waals (vdW) magnetic materials have exhibited intriguing and distinct functionalities from conventional magnetic materials. The EB in most vdW systems is far below room temperature, which poses a challenge for practical applications. Here, by using Kerr microscopy, we demonstrate a record-high blocking temperature that approaches room temperature and a huge positive EB field that nears 2 kOe at 100 K in naturally oxidized two-dimensional (2D) vdW ferromagnetic Fe3GaTe2 nanoflakes. Moreover, we realized a reversible manipulation of both the presence/absence and positive/negative signs of EB via a training magnetic field without multiple field cooling processes. Thus, our study clearly reveals the robust, sizable, and sign-tunable EB in vdW magnetic materials up to near room temperature, thereby establishing Fe3GaTe2 as an emerging room-temperature-operating vdW material and paving the way for designing practical 2D spintronic devices.
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Affiliation(s)
- Daxiang Liu
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Fangfang Pei
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Siyu Wang
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Xiaoli Chen
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Yanan Yuan
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Jiapeng Zhao
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Junming Guo
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Tianye Wang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Lin Li
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xucai Kan
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Dongsheng Song
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Xue Liu
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Yong Fang
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China
| | - Shouguo Wang
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Shiming Zhou
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Zi Qiang Qiu
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - He Huang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Mengmeng Yang
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Qian Li
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
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2
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Puthirath Balan A, Kumar A, Reiser P, Vimal Vas J, Denneulin T, Lee KD, Saunderson TG, Tschudin M, Pellet-Mary C, Dutta D, Schrader C, Scholz T, Geuchies J, Fu S, Wang H, Bonanni A, Lotsch BV, Nowak U, Jakob G, Gayles J, Kovacs A, Dunin-Borkowski RE, Maletinsky P, Kläui M. Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS 3/Fe 3GeTe 2 van der Waals Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403685. [PMID: 38994679 DOI: 10.1002/adma.202403685] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2024] [Revised: 06/24/2024] [Indexed: 07/13/2024]
Abstract
The exchange bias phenomenon, inherent in exchange-coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structures, offer an ideal platform for exploring exchange bias. However, effectively manipulating exchange bias in van der Waals heterostructures remains challenging. This study investigates the origin of exchange bias in MnPS3/Fe3GeTe2 van der Waals heterostructures, demonstrating a method to modulate nearly 1000% variation in magnitude through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS3, a substantial 170 mT exchange bias is observed at 5 K, one of the largest observed in van der Waals heterostructures. This significant exchange bias is linked to anomalous weak ferromagnetic ordering in MnPS3 below 40 K. The tunability of exchange bias during thermal cycling is attributed to the amorphization and changes in the van der Waals gap during field cooling. The findings highlight a robust and adjustable exchange bias in van der Waals heterostructures, presenting a straightforward method to enhance other interface-related spintronic phenomena for practical applications. Detailed interface analysis reveals atom migration between layers, forming amorphous regions on either side of the van der Waals gap, emphasizing the importance of precise interface characterization in these heterostructures.
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Affiliation(s)
- Aravind Puthirath Balan
- Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128, Mainz, Germany
| | - Aditya Kumar
- Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128, Mainz, Germany
| | - Patrick Reiser
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Joseph Vimal Vas
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425, Jülich, Germany
| | - Thibaud Denneulin
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425, Jülich, Germany
| | - Khoa Dang Lee
- Department of Physics, University of South Florida, Tampa, FL, 33620, USA
| | - Tom G Saunderson
- Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128, Mainz, Germany
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425, Jülich, Germany
| | - Märta Tschudin
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Clement Pellet-Mary
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Debarghya Dutta
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Carolin Schrader
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Tanja Scholz
- Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569, Stuttgart, Germany
| | - Jaco Geuchies
- Max Planck Institute for Polymer Research Mainz, Ackermannweg 10, 55128, Mainz, Germany
| | - Shuai Fu
- Max Planck Institute for Polymer Research Mainz, Ackermannweg 10, 55128, Mainz, Germany
| | - Hai Wang
- Max Planck Institute for Polymer Research Mainz, Ackermannweg 10, 55128, Mainz, Germany
| | - Alberta Bonanni
- Institute of Semiconductor and Solid-State Physics, Johannes Kepler University Linz, Altenberger Straße 69, Linz, 4040, Austria
| | - Bettina V Lotsch
- Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569, Stuttgart, Germany
| | - Ulrich Nowak
- Department of Physics, University of Konstanz, Universitaetsstrasse 10, 78464, Konstanz, Germany
| | - Gerhard Jakob
- Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128, Mainz, Germany
| | - Jacob Gayles
- Department of Physics, University of South Florida, Tampa, FL, 33620, USA
| | - Andras Kovacs
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425, Jülich, Germany
| | - Rafal E Dunin-Borkowski
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425, Jülich, Germany
| | - Patrick Maletinsky
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Mathias Kläui
- Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128, Mainz, Germany
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, Trondheim, 7491, Norway
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3
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Zhang J, Su T, Ma J. Strain-Induced Robust Exchange Bias Effect in Epitaxial La 0.7Sr 0.3MnO 3/LaFeO 3 Bilayers. Molecules 2024; 29:3244. [PMID: 39064823 PMCID: PMC11279207 DOI: 10.3390/molecules29143244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2024] [Revised: 07/06/2024] [Accepted: 07/06/2024] [Indexed: 07/28/2024] Open
Abstract
The ground state of correlated electrons in complex oxide films can be controlled by applying epitaxial strain, offering the potential to produce unexpected phenomena applicable to modern spintronic devices. In this study, we demonstrate that substrate-induced strain strongly affects the coupling mode of interfacial magnetic moments in a ferromagnetic (FM)/antiferromagnetic (AFM) system. In an epitaxial bilayer comprising AFM LaFeO3 (LFO) and FM La0.7Sr0.3MnO3 (LSMO), samples grown on a LaAlO3 (LAO) substrate exhibit a larger exchange bias field than those grown on a SrTiO3 substrate. Our results indicate a transition in the alignment of magnetic moments from perpendicular to collinear due to the large compressive strain exerted by the LAO substrate. Collinear magnetic moments at the LSMO/LFO interface generate strong exchange coupling, leading to a considerable exchange bias effect. Thus, our findings provide a method for tailoring and manipulating the orientations of magnetic moments at the FM/AFM heterogeneous interface using strain engineering, thereby augmenting methods for exchange bias generation.
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Affiliation(s)
- Jun Zhang
- Department of Chemical & Material Engineering, Lyuliang University, Lishi 033001, China;
| | - Tiancong Su
- School of Chemistry and Materials Science of Shanxi Normal University & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Taiyuan 030006, China;
- Institute of New Carbon-Based Materials and Zero-Carbon and Negative-Carbon Technology, Lyuliang University, Lishi 033001, China
| | - Jianchun Ma
- Department of Chemical & Material Engineering, Lyuliang University, Lishi 033001, China;
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4
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Yu X, Peng Z, Xu L, Shi W, Li Z, Meng X, He X, Wang Z, Duan S, Tong L, Huang X, Miao X, Hu W, Ye L. Manipulating 2D Materials through Strain Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402561. [PMID: 38818684 DOI: 10.1002/smll.202402561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Revised: 05/15/2024] [Indexed: 06/01/2024]
Abstract
This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.
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Affiliation(s)
- Xiangxiang Yu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- School of Physic and Optoelectronic Engineering, Yangtze University, Jingzhou, Hubei, 434023, China
| | - Zhuiri Peng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Langlang Xu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Wenhao Shi
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zheng Li
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiaohan Meng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiao He
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Shikun Duan
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Tong
- Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, 999077, China
| | - Xinyu Huang
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Ye
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
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5
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Gu K, Zhang X, Liu X, Guo X, Wu Z, Wang S, Song Q, Wang W, Wei L, Liu P, Ma J, Xu Y, Niu W, Pu Y. Exchange Bias Modulated by Antiferromagnetic Spin-Flop Transition in 2D Van der Waals Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307034. [PMID: 38353386 PMCID: PMC11077673 DOI: 10.1002/advs.202307034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2023] [Revised: 01/29/2024] [Indexed: 05/09/2024]
Abstract
Exchange bias is extensively studied and widely utilized in spintronic devices, such as spin valves and magnetic tunnel junctions. 2D van der Waals (vdW) magnets, with high-quality interfaces in heterostructures, provide an excellent platform for investigating the exchange bias effect. To date, intrinsic modulation of exchange bias, for instance, via precise manipulation of the magnetic phases of the antiferromagnetic layer, is yet to be fully reached, owing partly to the large exchange fields of traditional bulk antiferromagnets. Herein, motivated by the low-field spin-flop transition of a 2D antiferromagnet, CrPS4, exchange bias is explored by modulating the antiferromagnetic spin-flop phase transition in all-vdW magnetic heterostructures. The results demonstrate that undergoing the spin-flop transition during the field cooling process, the A-type antiferromagnetic ground state of CrPS4 turns into a canted antiferromagnetic one, therefore, it reduces the interfacial magnetic coupling and suppresses the exchange bias. Via conducting different cooling fields, one can select the exchange bias effect switching among the "ON", "depressed", and "OFF" states determined by the spin flop of CrPS4. This work provides an approach to intrinsically modulate the exchange bias in all-vdW heterostructures and paves new avenues to design and manipulate 2D spintronic devices.
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Affiliation(s)
- Kai Gu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Xiaoqian Zhang
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
- International Quantum AcademyShenzhen518048China
| | - Xiangjie Liu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Xinlei Guo
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Zhenqi Wu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Shuo Wang
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Qinxin Song
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Wei Wang
- Key Laboratory of Flexible Electronics & Institute of Advanced MaterialsJiangsu National Synergetic Innovation Center for Advanced MaterialsNanjing Tech UniversityNanjing211816China
| | - Lujun Wei
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Ping Liu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Jingrui Ma
- Key Laboratory of Energy Conversion and Storage TechnologiesSouthern University of Science and TechnologyShenzhen518055China
| | - Yongbing Xu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
- School of Electronic Science and EngineeringNanjing UniversityNanjing210023China
| | - Wei Niu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
- Key Laboratory of Energy Conversion and Storage TechnologiesSouthern University of Science and TechnologyShenzhen518055China
| | - Yong Pu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
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6
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Chong SK, Cheng Y, Man H, Lee SH, Wang Y, Dai B, Tanabe M, Yang TH, Mao Z, Moler KA, Wang KL. Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi 2Te 4. Nat Commun 2024; 15:2881. [PMID: 38570519 PMCID: PMC10991375 DOI: 10.1038/s41467-024-46689-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Accepted: 03/06/2024] [Indexed: 04/05/2024] Open
Abstract
Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi2Te4. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.
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Affiliation(s)
- Su Kong Chong
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA.
| | - Yang Cheng
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Huiyuan Man
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Stanford Nano Shared Facilities, Stanford University, Stanford, CA, 94305, USA
| | - Seng Huat Lee
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Yu Wang
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Masaki Tanabe
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Ting-Hsun Yang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Zhiqiang Mao
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Kathryn A Moler
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Physics and Applied Physics, Stanford University, Stanford, CA, 94305, USA
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA.
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7
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Chen X, Zhang X, Xiang G. Recent advances in two-dimensional intrinsic ferromagnetic materials Fe 3X( X=Ge and Ga)Te 2 and their heterostructures for spintronics. NANOSCALE 2024; 16:527-554. [PMID: 38063022 DOI: 10.1039/d3nr04977a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Owing to their atomic thicknesses, atomically flat surfaces, long-range spin textures and captivating physical properties, two-dimensional (2D) magnetic materials, along with their van der Waals heterostructures (vdWHs), have attracted much interest for the development of next-generation spin-based materials and devices. As an emergent family of intrinsic ferromagnetic materials, Fe3X(X=Ge and Ga)Te2 has become a rising star in the fields of condensed matter physics and materials science owing to their high Curie temperature and large perpendicular magnetic anisotropy. Herein, we aim to comprehensively summarize the recent progress on 2D Fe3X(X=Ge and Ga)Te2 and their vdWHs and provide a panorama of their physical properties and underlying mechanisms. First, an overview of Fe3X(X=Ge and Ga)Te2 is presented in terms of crystalline and electronic structures, distinctive physical properties and preparation methods. Subsequently, the engineering of electronic and spintronic properties of Fe3X(X=Ge and Ga)Te2 by diverse means, including strain, gate voltage, substrate and patterning, is surveyed. Then, the latest advances in spintronic devices based on 2D Fe3X(X=Ge and Ga)Te2 vdWHs are discussed and elucidated in detail, including vdWH devices that exploit the exchange bias effect, magnetoresistance effect, spin-orbit torque effect, magnetic proximity effect and Dzyaloshinskii-Moriya interaction. Finally, the future outlook is given in terms of efficient large-scale fabrication, intriguing physics and important technological applications of 2D Fe3X(X=Ge and Ga)Te2 and their vdWHs. Overall, this study provides an overview to support further studies of emergent 2D Fe3X(X=Ge and Ga)Te2 materials and related vdWH devices for basic science and practical applications.
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Affiliation(s)
- Xia Chen
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Xi Zhang
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Gang Xiang
- College of Physics, Sichuan University, Chengdu 610064, China.
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8
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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