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Zeng Z, Tian Z, Wang Y, Ge C, Strauß F, Braun K, Michel P, Huang L, Liu G, Li D, Scheele M, Chen M, Pan A, Wang X. Dual polarization-enabled ultrafast bulk photovoltaic response in van der Waals heterostructures. Nat Commun 2024; 15:5355. [PMID: 38918419 PMCID: PMC11199638 DOI: 10.1038/s41467-024-49760-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Accepted: 06/19/2024] [Indexed: 06/27/2024] Open
Abstract
The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide the ideal platform for BPVE due to interfacial interactions naturally breaking the crystal symmetries of the individual constituents and thus inducing charge polarizations. Here, we show an approach to obtain ultrafast BPVE by taking advantage of dual interfacial polarizations in vdW heterostructures. While the in-plane polarization gives rise to the BPVE in the overlayer, the charge carrier transfer assisted by the out-of-plane polarization further accelerates the interlayer electronic transport and enhances the BPVE. We illustrate the concept in MoS2/black phosphorus heterostructures, where the experimentally observed intrinsic BPVE response time achieves 26 ps, orders of magnitude faster than that of conventional non-centrosymmetric materials. Moreover, the heterostructure device possesses an extrinsic response time of approximately 2.2 ns and a bulk photovoltaic coefficient of 0.6 V-1, which is among the highest values for vdW BPV devices reported so far. Our study thus points to an effective way of designing ultrafast BPVE for high-speed photodetection.
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Grants
- the National Key Research and Development Program of Ministry of Science and Technology (Nos. 2022YFA1204300), the National Natural Science Foundation of China (Nos. 52022029, 52302175, 52221001, U23A20570, 92263107, 62090035, 12174098), the Hunan Provincial Natural Science Foundation of China (Nos. 2023JJ40138, 2022JJ30142),
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Affiliation(s)
- Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Zhiqiang Tian
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Yufan Wang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Cuihuan Ge
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Fabian Strauß
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Patrick Michel
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Lanyu Huang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guixian Liu
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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Sun RX, Hu Z, Zhao X, Zha MJ, Zhang J, Chen XD, Liu Z, Tian J. Strain-Prompted Giant Flexo-Photovoltaic Effect in Two-Dimensional Violet Phosphorene Nanosheets. ACS NANO 2024; 18:13298-13307. [PMID: 38727530 DOI: 10.1021/acsnano.4c02821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
As a second-order nonlinear optical phenomenon, the bulk photovoltaic (BPV) effect is expected to break through the Shockley-Queisser limit of thermodynamic photoelectron conversion and improve the energy conversion efficiency of photovoltaic cells. Here, we have successfully induced a strong flexo-photovoltaic (FPV) effect, a form of BPV effect, in strained violet phosphorene nanosheets (VPNS) by utilizing strain engineering at the h-BN nanoedge, which was first observed in nontransition metal dichalcogenide (TMD) systems. This BPV effect was found to originate from the disruption of inversion symmetry induced by uniaxial strain applied to VPNS at the h-BN nanoedge. We have revealed the intricate relationship between the bulk photovoltaic effect and strain gradients in VPNS through thickness-dependent photovoltaic response experiments. A bulk photovoltaic coefficient of up to 1.3 × 10-3 V-1 and a polarization extinction ratio of 21.6 have been achieved by systematically optimizing the height of the h-BN nanoedge and the thickness of VPNS, surpassing those of reported TMD materials (typically less than 3). Our results have revealed the fundamental relationship between the FPV effect and the strain gradients in low-dimensional materials and inspired further exploration of optoelectronic phenomena in strain-gradient engineered materials.
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Affiliation(s)
- Ruo-Xuan Sun
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Zhen Hu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Xuewen Zhao
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Ming-Jie Zha
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Jinying Zhang
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Xu-Dong Chen
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Zhibo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Jianguo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
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Zhou Y, Zhou X, Yu XL, Liang Z, Zhao X, Wang T, Miao J, Chen X. Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries. Nat Commun 2024; 15:501. [PMID: 38218730 PMCID: PMC10787835 DOI: 10.1038/s41467-024-44792-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 01/04/2024] [Indexed: 01/15/2024] Open
Abstract
The photovoltaic effect lies at the heart of eco-friendly energy harvesting. However, the conversion efficiency of traditional photovoltaic effect utilizing the built-in electric effect in p-n junctions is restricted by the Shockley-Queisser limit. Alternatively, intrinsic/bulk photovoltaic effect (IPVE/BPVE), a second-order nonlinear optoelectronic effect arising from the broken inversion symmetry of crystalline structure, can overcome this theoretical limit. Here, we uncover giant and robust IPVE in one-dimensional (1D) van der Waals (vdW) grain boundaries (GBs) in a layered semiconductor, ReS2. The IPVE-induced photocurrent densities in vdW GBs are among the highest reported values compared with all kinds of material platforms. Furthermore, the IPVE-induced photocurrent is gate-tunable with a polarization-independent component along the GBs, which is preferred for energy harvesting. The observed IPVE in vdW GBs demonstrates a promising mechanism for emerging optoelectronics applications.
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Affiliation(s)
- Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
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