1
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Jung D, Park JW, Min S, Lee HJ, Park JS, Kim GM, Shin D, Im S, Lim J, Kim KH, Chae JA, Lee DC, Pugin R, Bulliard X, Hwang E, Park JS, Park YS, Bae WK. Strain-graded quantum dots with spectrally pure, stable and polarized emission. Nat Commun 2024; 15:5561. [PMID: 38956100 PMCID: PMC11220006 DOI: 10.1038/s41467-024-49791-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Accepted: 06/18/2024] [Indexed: 07/04/2024] Open
Abstract
Structural deformation modifies the bandgap, exciton fine structure and phonon energy of semiconductors, providing an additional knob to control their optical properties. The impact can be exploited in colloidal semiconductor quantum dots (QDs), wherein structural stresses can be imposed in three dimensions while defect formation is suppressed by controlling surface growth kinetics. Yet, the control over the structural deformation of QDs free from optically active defects has not been reached. Here, we demonstrate strain-graded CdSe-ZnSe core-shell QDs with compositionally abrupt interface by the coherent pseudomorphic heteroepitaxy. Resulting QDs tolerate mutual elastic deformation of varying magnitudes at the interface with high structural fidelity, allowing for spectrally stable and pure emission of photons at accelerated rates with near unity luminescence efficiency. We capitalize on the asymmetric strain effect together with the quantum confinement effect to expand emission envelope of QDs spanning the entire visible region and exemplify their use in photonic applications.
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Affiliation(s)
- Dongju Jung
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jeong Woo Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sejong Min
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hak June Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jin Su Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Gui-Min Kim
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Doyoon Shin
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Seongbin Im
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Ka Hyung Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jong Ah Chae
- Department of Display Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Raphaël Pugin
- Centre Suisse d'Electronique et de Microtechnique (CSEM SA), CH-2002, Neuchatel, Switzerland
| | - Xavier Bulliard
- Centre Suisse d'Electronique et de Microtechnique (CSEM SA), CH-2002, Neuchatel, Switzerland.
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Ji-Sang Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
| | - Young-Shin Park
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
- Department of Display Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
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2
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Zhang M, Zhang J, Gu L, Su Q, Qiang P, Yang Y, Ding S, Yao T, Zhang X, Du G, Xu B, Wang H. Ultranarrow Deep-Blue Luminescence of Perovskite Nanocrystals by A-Site Cation Control. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31524-31533. [PMID: 38841741 DOI: 10.1021/acsami.4c06705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Metal-halide perovskite nanocrystals (NCs) are one of the most promising emitters for the application of display and nanolight sources. The full width at half-maximum (FWHM) of photoluminescence (PL) emission is essential for color purity, which however remains a difficulty to further reduce the FWHM of the perovskite NCs at room temperature. Here, we show the quasi-sphere perovskite NCs with narrow PL emission at a deep-blue wavelength of ∼430 nm; its PL FWHM reaches ∼11 nm at room temperature, owing to the monodispersion in size distribution as well as the symmetric quasi-sphere morphology of NCs releasing the fine structure splitting-induced inhomogeneous broadening. Through regulating A cations with respect to the ratio of FA (or MA)-to-Cs and Cs-to-Pb, the PL emission of the NCs could be tuned from ∼505 to ∼430 nm combined with varied morphologies from large cube to small quasi-sphere. Such spectroscopic and morphological discrepancies are supposed to be attributed to the different crystalline kinetics that is strongly dependent on the synthetic condition. To be specific, in the case of increasing FA (or MA)-to-Cs, the growth rate of CsPbBr3 and FAPbBr3 (or MAPbBr3) perovskites is determined by the reactivity of transient species, while in the case of decreasing the Cs-to-Pb ratio, the growth rate of perovskites is slowed down by the serious reduction of Cs+ in the precursor. This study provides an effective strategy to adjust the emission across from green to deep-blue color and promotes the perovskite NCs with a narrow FWHM, and tunable PL emission facilitates in application of optoelectronic devices.
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Affiliation(s)
- Miao Zhang
- Materials Institute of Atomic and Molecular Science, School of Physics & Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Jingyun Zhang
- School of Materials Science & Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Lei Gu
- School of Materials Science & Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
| | | | - Pengpeng Qiang
- School of Materials Science & Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Yingjun Yang
- Materials Institute of Atomic and Molecular Science, School of Physics & Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Shuakai Ding
- Materials Institute of Atomic and Molecular Science, School of Physics & Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Tanxin Yao
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an 710072, China
| | - Xiuhai Zhang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an 710072, China
| | - Gaohui Du
- Materials Institute of Atomic and Molecular Science, School of Physics & Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Bingshe Xu
- Materials Institute of Atomic and Molecular Science, School of Physics & Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030000, China
| | - Hongyue Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an 710072, China
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3
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Keitel R, Brechbühler R, Cocina A, Antolinez FV, Meyer SA, Vonk SJW, Rojo H, Rabouw FT, Norris DJ. Fluctuations in the Photoluminescence Excitation Spectra of Individual Semiconductor Nanocrystals. J Phys Chem Lett 2024; 15:4844-4850. [PMID: 38682807 PMCID: PMC11089566 DOI: 10.1021/acs.jpclett.4c00516] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2024] [Revised: 04/07/2024] [Accepted: 04/09/2024] [Indexed: 05/01/2024]
Abstract
Most single quantum emitters display non-steady emission properties. Models that explain this effect have primarily relied on photoluminescence measurements that reveal variations in intensity, wavelength, and excited-state lifetime. While photoluminescence excitation spectroscopy could provide complementary information, existing experimental methods cannot collect spectra before individual emitters change in intensity (blink) or wavelength (spectrally diffuse). Here, we present an experimental approach that circumvents such issues, allowing the collection of excitation spectra from individual emitters. Using rapid modulation of the excitation wavelength, we collect and classify excitation spectra from individual CdSe/CdS/ZnS core/shell/shell quantum dots. The spectra, along with simultaneous time-correlated single-photon counting, reveal two separate emission-reduction mechanisms caused by charging and trapping, respectively. During bright emission periods, we also observe a correlation between emission red-shifts and the increased oscillator strength of higher excited states. Quantum-mechanical modeling indicates that diffusion of charges in the vicinity of an emitter polarizes the exciton and transfers the oscillator strength to higher-energy transitions.
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Affiliation(s)
- Robert
C. Keitel
- Optical
Materials Engineering Laboratory, Department of Mechanical and Process
Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Raphael Brechbühler
- Optical
Materials Engineering Laboratory, Department of Mechanical and Process
Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Ario Cocina
- Optical
Materials Engineering Laboratory, Department of Mechanical and Process
Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Felipe V. Antolinez
- Optical
Materials Engineering Laboratory, Department of Mechanical and Process
Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Stefan A. Meyer
- Optical
Materials Engineering Laboratory, Department of Mechanical and Process
Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Sander J. W. Vonk
- Optical
Materials Engineering Laboratory, Department of Mechanical and Process
Engineering, ETH Zurich, 8092 Zurich, Switzerland
- Debye
Institute for Nanomaterials Science, Utrecht
University, 3584 CC Utrecht, The Netherlands
| | - Henar Rojo
- Optical
Materials Engineering Laboratory, Department of Mechanical and Process
Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Freddy T. Rabouw
- Optical
Materials Engineering Laboratory, Department of Mechanical and Process
Engineering, ETH Zurich, 8092 Zurich, Switzerland
- Debye
Institute for Nanomaterials Science, Utrecht
University, 3584 CC Utrecht, The Netherlands
| | - David J. Norris
- Optical
Materials Engineering Laboratory, Department of Mechanical and Process
Engineering, ETH Zurich, 8092 Zurich, Switzerland
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4
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Zeng Y, Liu X, Liu Y, Chen W, Liu F, Li H. 22% Record Efficiency in Nanorod Light-Emitting Diodes Achieved by Gradient Shells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310705. [PMID: 38377984 DOI: 10.1002/adma.202310705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Revised: 01/08/2024] [Indexed: 02/22/2024]
Abstract
The external quantum efficiency (EQE) in light-emitting diodes (LEDs) based on isotropic quantum dots has approached the theoretical limit of close to 20%. Anisotropic nanorods can break this limit by taking advantage of their directional emission. However, the progress towards higher EQE by using CdSe/CdS nanorods (NRs) faces several challenges, primarily involving the low quantum yield and unbalanced charge injection in devices. Herein, the seeded growth method is modified and anisotropic nanorods are obtained with photoluminescence quantum yield up to 98% by coating a gradient alloyed CdZnSe shell around conventional spherical CdSe seeds. This intermediate alloyed CdZnSe shell combined with a subsequent rod-shaped CdZnS/ZnS shell can effectively suppress the electron delocalization in the typical CdSe/CdS nanorods due to their small conduction bandgap offset. Additionally, this alloyed shell can reduce the hole-injection barrier and create a larger barrier for electron injection, both effects promoting a balanced injection of electrons and holes in LEDs. Hence, LEDs are reached with high brightness (160341 cd m-2) and high efficiency (EQE = 22%, current efficiency = 23.19 cd A-1), which are the highest values to date for nanorod LEDs.
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Affiliation(s)
- Yicheng Zeng
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Xiaonan Liu
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Yuan Liu
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Weiwei Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Fangze Liu
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, China
| | - Hongbo Li
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
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5
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Cai F, Zong H, Li M, Li C, Huang G, Pascual J, Liang C, Su Z, Li Z, Gao X, Hou B, Wang S, Zhou G, Du Z. Charge Carrier Regulation for Efficient Blue Quantum-Dot Light-Emitting Diodes Via a High-Mobility Coplanar Cyclopentane[ b]thiopyran Derivative. NANO LETTERS 2024; 24:5284-5291. [PMID: 38626333 PMCID: PMC11066960 DOI: 10.1021/acs.nanolett.4c00883] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 04/11/2024] [Accepted: 04/12/2024] [Indexed: 04/18/2024]
Abstract
The performance of blue quantum dot light-emitting diodes (QLEDs) is limited by unbalanced charge injection, resulting from insufficient holes caused by low mobility or significant energy barriers. Here, we introduce an angular-shaped heteroarene based on cyclopentane[b]thiopyran (C8-SS) to modify the hole transport layer poly-N-vinylcarbazole (PVK), in blue QLEDs. C8-SS exhibits high hole mobility and conductivity due to the π···π and S···π interactions. Introducing C8-SS to PVK significantly enhanced hole mobility, increasing it by 2 orders of magnitude from 2.44 × 10-6 to 1.73 × 10-4 cm2 V-1 s-1. Benefiting from high mobility and conductivity, PVK:C8-SS-based QLEDs exhibit a low turn-on voltage (Von) of 3.2 V. More importantly, the optimized QLEDs achieve a high peak power efficiency (PE) of 7.13 lm/W, which is 2.65 times that of the control QLEDs. The as-proposed interface engineering provides a novel and effective strategy for achieving high-performance blue QLEDs in low-energy consumption lighting applications.
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Affiliation(s)
- Fensha Cai
- Key
Lab for Special Functional Materials of Ministry of Education, National
& Local Joint Engineering Research Center for High-efficiency
Display and Lighting Technology, School of Materials Science and Engineering,
and Collaborative Innovation Center of Nano Functional Materials and
Applications, Henan University, Kaifeng 475004, P. R. China
| | - Hao Zong
- Lab
of Advanced Materials, State Key Laboratory of Molecular Engineering
of Polymers, Fudan University, Shanghai 200438, P. R. China
| | - Meng Li
- Key
Lab for Special Functional Materials of Ministry of Education, National
& Local Joint Engineering Research Center for High-efficiency
Display and Lighting Technology, School of Materials Science and Engineering,
and Collaborative Innovation Center of Nano Functional Materials and
Applications, Henan University, Kaifeng 475004, P. R. China
| | - Chenguang Li
- Key
Lab for Special Functional Materials of Ministry of Education, National
& Local Joint Engineering Research Center for High-efficiency
Display and Lighting Technology, School of Materials Science and Engineering,
and Collaborative Innovation Center of Nano Functional Materials and
Applications, Henan University, Kaifeng 475004, P. R. China
| | - Guangguang Huang
- Key
Lab for Special Functional Materials of Ministry of Education, National
& Local Joint Engineering Research Center for High-efficiency
Display and Lighting Technology, School of Materials Science and Engineering,
and Collaborative Innovation Center of Nano Functional Materials and
Applications, Henan University, Kaifeng 475004, P. R. China
| | - Jorge Pascual
- Polymat, University of the Basque Country UPV/EHU, Donostia-San Sebastian 20018, Spain
| | - Chao Liang
- MOE
Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed
Matter, School of Physics, Xi’an
Jiaotong University, Xi’an 710049, P. R.
China
| | - Zhenhuang Su
- Shanghai
Synchrotron Radiation Facility (SSRF), Shanghai
Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai 201204, P. R. China
| | - Zhe Li
- School of
Engineering and Materials Science (SEMS), Queen Mary University of London, London E1 4NS, United Kingdom
| | - Xingyu Gao
- Shanghai
Synchrotron Radiation Facility (SSRF), Shanghai
Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai 201204, P. R. China
| | - Bo Hou
- School
of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, Wales, United Kingdom
| | - Shujie Wang
- Key
Lab for Special Functional Materials of Ministry of Education, National
& Local Joint Engineering Research Center for High-efficiency
Display and Lighting Technology, School of Materials Science and Engineering,
and Collaborative Innovation Center of Nano Functional Materials and
Applications, Henan University, Kaifeng 475004, P. R. China
| | - Gang Zhou
- Lab
of Advanced Materials, State Key Laboratory of Molecular Engineering
of Polymers, Fudan University, Shanghai 200438, P. R. China
| | - Zuliang Du
- Key
Lab for Special Functional Materials of Ministry of Education, National
& Local Joint Engineering Research Center for High-efficiency
Display and Lighting Technology, School of Materials Science and Engineering,
and Collaborative Innovation Center of Nano Functional Materials and
Applications, Henan University, Kaifeng 475004, P. R. China
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6
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Moes J, Vliem JF, de Melo PMMC, Wigmans TC, Botello-Méndez AR, Mendes RG, van Brenk EF, Swart I, Maisel Licerán L, Stoof HTC, Delerue C, Zanolli Z, Vanmaekelbergh D. Characterization of the Edge States in Colloidal Bi 2Se 3 Platelets. NANO LETTERS 2024; 24:5110-5116. [PMID: 38624179 PMCID: PMC11066965 DOI: 10.1021/acs.nanolett.3c04460] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 03/12/2024] [Accepted: 03/13/2024] [Indexed: 04/17/2024]
Abstract
The remarkable development of colloidal nanocrystals with controlled dimensions and surface chemistry has resulted in vast optoelectronic applications. But can they also form a platform for quantum materials, in which electronic coherence is key? Here, we use colloidal, two-dimensional Bi2Se3 crystals, with precise and uniform thickness and finite lateral dimensions in the 100 nm range, to study the evolution of a topological insulator from three to two dimensions. For a thickness of 4-6 quintuple layers, scanning tunneling spectroscopy shows an 8 nm wide, nonscattering state encircling the platelet. We discuss the nature of this edge state with a low-energy continuum model and ab initio GW-Tight Binding theory. Our results also provide an indication of the maximum density of such states on a device.
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Affiliation(s)
- Jesper
R. Moes
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Jara F. Vliem
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Pedro M. M. C. de Melo
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Thomas C. Wigmans
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Andrés R. Botello-Méndez
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Rafael G. Mendes
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Ella F. van Brenk
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Ingmar Swart
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Lucas Maisel Licerán
- Institute
for Theoretical Physics and Center for Extreme Matter and Emergent
Phenomena, Utrecht University, Princetonplein 5, 3584 CC, Utrecht, The Netherlands
| | - Henk T. C. Stoof
- Institute
for Theoretical Physics and Center for Extreme Matter and Emergent
Phenomena, Utrecht University, Princetonplein 5, 3584 CC, Utrecht, The Netherlands
| | - Christophe Delerue
- Université
de Lille, CNRS, Université Polytechnique Hauts-de-France, Junia,
UMR 8520-IEMN, F-59000 Lille, France
| | - Zeila Zanolli
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Daniel Vanmaekelbergh
- Debye Institute
for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
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7
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Zhang H, Liu J, Besteiro LV, Selopal GS, Zhao Z, Sun S, Rosei F. Advanced Interface Engineering in Gradient Core/Shell Quantum Dots Enables Efficient Photoelectrochemical Hydrogen Evolution. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306203. [PMID: 38128031 DOI: 10.1002/smll.202306203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 11/19/2023] [Indexed: 12/23/2023]
Abstract
Semiconductor core/shell quantum dots (QDs) are considered promising building blocks to fabricate photoelectrochemical (PEC) cells for the direct conversion of solar energy into hydrogen (H2). However, the lattice mismatch between core and shell in such QDs results in undesirable defects and severe carrier recombination, limiting photo-induced carrier separation/transfer and solar-to-fuel conversion efficiency. Here, an interface engineering approach is explored to minimize the core-shell lattice mismatch in CdS/CdSexS1-x (x = 0.09-1) core/shell QDs (g-CSG). As a proof-of-concept, PEC cells based on g-CSG QDs yield a remarkable photocurrent density of 13.1 mA cm-2 under AM 1.5 G one-sun illumination (100 mW cm-2), which is ≈54.1% and ≈33.7% higher compared to that in CdS/CdSe0.5S0.5 (g-CSA) and CdS/CdSe QDs (g-CS), respectively. Theoretical calculations and carrier dynamics confirm more efficient carrier separation and charge transfer rate in g-CSG QDs with respect to g-CSA and g-CS QDs. These results are attributed to the minimization of the core-shell lattice mismatch by the cascade gradient shell in g-CSG QDs, which modifies carrier confinement potential and reduces interfacial defects. This work provides fundamental insights into the interface engineering of core/shell QDs and may open up new avenues to boost the performance of PEC cells for H2 evolution and other QDs-based optoelectronic devices.
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Affiliation(s)
- Hui Zhang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Jiabin Liu
- Institut National de la Recherche Scientifique, Centre Énergie Matériaux Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X 1P7, Canada
| | | | - Gurpreet S Selopal
- Institut National de la Recherche Scientifique, Centre Énergie Matériaux Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X 1P7, Canada
- Department of Engineering, Faculty of Agriculture, Dalhousie University, Truro, NS, B2N 5E3, Canada
| | - Zhenhuan Zhao
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Shuhui Sun
- Institut National de la Recherche Scientifique, Centre Énergie Matériaux Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X 1P7, Canada
| | - Federico Rosei
- Institut National de la Recherche Scientifique, Centre Énergie Matériaux Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X 1P7, Canada
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8
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Ossia Y, Levi A, Chefetz N, Peleg A, Remennik S, Vakahi A, Banin U. Seeing is believing: Correlating optoelectronic functionality with atomic scale imaging of single semiconductor nanocrystals. J Chem Phys 2024; 160:134201. [PMID: 38573848 DOI: 10.1063/5.0198140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2024] [Accepted: 02/29/2024] [Indexed: 04/06/2024] Open
Abstract
A unique on-chip method for the direct correlation of optical properties, with atomic-scale chemical-structural characteristics for a single quantum dot (QD), is developed and utilized in various examples. This is based on performing single QD optical characterization on a modified glass substrate, followed by the extraction of the relevant region of interest by focused-ion-beam-scanning electron microscope processing into a lamella for high resolution scanning transmission electron microscopy (STEM) characterization with atomic scale resolution. The direct correlation of the optical response under an electric field with STEM analysis of the same particle allows addressing several single particle phenomena: first, the direct correlation of single QD photoluminescence (PL) polarization and its response to the external field with the QD crystal lattice alignment, so far inferred indirectly; second, the identification of unique yet rare few-QD assemblies, correlated directly with their special spectroscopic optical characteristics, serving as a guide for future designed assemblies; and third, the study on the effect of metal island growth on the PL behavior of hybrid semiconductor-metal nanoparticles, with relevance for their possible functionality in photocatalysis. This work, therefore, establishes the use of the direct on-chip optical-structural correlation method for numerous scenarios and timely questions in the field of QD research.
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Affiliation(s)
- Yonatan Ossia
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Adar Levi
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Nadav Chefetz
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Amir Peleg
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Sergei Remennik
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Atzmon Vakahi
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Uri Banin
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
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9
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Lee YJ, Kim S, Lee J, Cho E, Won YH, Kim T, Kim D. Crystallographic and Photophysical Analysis on Facet-Controlled Defect-Free Blue-Emitting Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311719. [PMID: 38214475 DOI: 10.1002/adma.202311719] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Revised: 12/21/2023] [Indexed: 01/13/2024]
Abstract
The burgeoning demand for commercializing self-luminescing quantum dot (QD) light-emitting diodes (LEDs) has stimulated extensive research into environmentally friendly and efficient QD materials. Hydrofluoric acid (HF) additive improves photoluminescence (PL) properties of blue-emitting ZnSeTe QDs, ultimately reaching a remarkable quantum yield (QY) of 97% with an ultranarrow peak width of 14 nm after sufficient HF addition. The improvement in optical properties of the QDs is accompanied by a morphology change of the particles, forming cubic-shaped defect-free ZnSeTe QDs characterized by a zinc blende (ZB) crystal structure. This treatment improves the QD-emitting properties by facilitating facet-specific growth, selectively exposing stabilized (100) facets, and reducing the lattice disorders. The facet-specific growth process gives rise to defect-free monodispersed cubic dots that exhibit remarkably narrow and homogeneous PL spectra. Meticulous time-resolved spectroscopic studies allow an understanding of the correlation between ZnSeTe QDs' particle shape and performance following HF addition. These investigations shed light on the intricacies of the growth mechanism and the factors influencing the PL efficiency of the resulting QDs. The findings significantly contribute to understanding the role of HF treatment in tailoring the optical properties of ZnSeTe QDs, thereby bringing it closer to the realization of highly efficient and bright QD-LEDs for various practical applications.
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Affiliation(s)
- Yu Jin Lee
- Spectroscopy Laboratory for Functional π-Electronic Systems and Department of Chemistry, Yonsei University, Seoul, 03722, South Korea
| | - Sungwoo Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, 16678, South Korea
| | - Junho Lee
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, 16678, South Korea
| | - Eunseog Cho
- CSE Team, Samsung Electronics, Hwaseong, 18848, South Korea
| | - Yu-Ho Won
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, 16678, South Korea
| | - Taehyung Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, 16678, South Korea
| | - Dongho Kim
- Spectroscopy Laboratory for Functional π-Electronic Systems and Department of Chemistry, Yonsei University, Seoul, 03722, South Korea
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10
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Wang X, Chen A, Wu X, Zhang J, Dong J, Zhang L. Synthesis and Modulation of Low-Dimensional Transition Metal Chalcogenide Materials via Atomic Substitution. NANO-MICRO LETTERS 2024; 16:163. [PMID: 38546814 PMCID: PMC10978568 DOI: 10.1007/s40820-024-01378-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 02/17/2024] [Indexed: 04/01/2024]
Abstract
In recent years, low-dimensional transition metal chalcogenide (TMC) materials have garnered growing research attention due to their superior electronic, optical, and catalytic properties compared to their bulk counterparts. The controllable synthesis and manipulation of these materials are crucial for tailoring their properties and unlocking their full potential in various applications. In this context, the atomic substitution method has emerged as a favorable approach. It involves the replacement of specific atoms within TMC structures with other elements and possesses the capability to regulate the compositions finely, crystal structures, and inherent properties of the resulting materials. In this review, we present a comprehensive overview on various strategies of atomic substitution employed in the synthesis of zero-dimensional, one-dimensional and two-dimensional TMC materials. The effects of substituting elements, substitution ratios, and substitution positions on the structures and morphologies of resulting material are discussed. The enhanced electrocatalytic performance and photovoltaic properties of the obtained materials are also provided, emphasizing the role of atomic substitution in achieving these advancements. Finally, challenges and future prospects in the field of atomic substitution for fabricating low-dimensional TMC materials are summarized.
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Affiliation(s)
- Xuan Wang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Akang Chen
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - XinLei Wu
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jiatao Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
| | - Leining Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
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11
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Feng Y, Li H, Zhu M, Gao Y, Cai Q, Lu G, Dai X, Ye Z, He H. Nucleophilic Reaction-Enabled Chloride Modification on CsPbI 3 Quantum Dots for Pure Red Light-Emitting Diodes with Efficiency Exceeding 26 . Angew Chem Int Ed Engl 2024; 63:e202318777. [PMID: 38258990 DOI: 10.1002/anie.202318777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Indexed: 01/24/2024]
Abstract
High-performance pure red perovskite light-emitting diodes (PeLEDs) with an emission wavelength shorter than 650 nm are ideal for wide-color-gamut displays, yet remain an unprecedented challenge to progress. Mixed-halide CsPb(Br/I)3 emitter-based PeLEDs suffer spectral stability induced by halide phase segregation and CsPbI3 quantum dots (QDs) suffer from a compromise between emission wavelength and electroluminescence efficiency. Here, we demonstrate efficient pure red PeLEDs with an emission centered at 638 nm based on PbClx -modified CsPbI3 QDs. A nucleophilic reaction that releases chloride ions and manipulates the ligand equilibrium of the colloidal system is developed to synthesize the pure red emission QDs. The comprehensive structural and spectroscopic characterizations evidence the formation of PbClx outside the CsPbI3 QDs, which regulates exciton recombination and prevents the exciton from dissociation induced by surface defects. In consequence, PeLEDs based on PbClx -modified CsPbI3 QDs with superior optoelectronic properties demonstrate stable electroluminescence spectra at high driving voltages, a record external quantum efficiency of 26.1 %, optimal efficiency roll-off of 16.0 % at 1000 cd m-2 , and a half lifetime of 7.5 hours at 100 cd m-2 , representing the state-of-the-art pure red PeLEDs. This work provides new insight into constructing the carrier-confined structure on perovskite QDs for high-performance PeLEDs.
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Affiliation(s)
- Yifeng Feng
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Hongjin Li
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
| | - Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Guochao Lu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
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12
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Bodnarchuk MI, Feld LG, Zhu C, Boehme SC, Bertolotti F, Avaro J, Aebli M, Mir SH, Masciocchi N, Erni R, Chakraborty S, Guagliardi A, Rainò G, Kovalenko MV. Colloidal Aziridinium Lead Bromide Quantum Dots. ACS NANO 2024. [PMID: 38320982 PMCID: PMC10883123 DOI: 10.1021/acsnano.3c11579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
The compositional engineering of lead-halide perovskite nanocrystals (NCs) via the A-site cation represents a lever to fine-tune their structural and electronic properties. However, the presently available chemical space remains minimal since, thus far, only three A-site cations have been reported to favor the formation of stable lead-halide perovskite NCs, i.e., Cs+, formamidinium (FA), and methylammonium (MA). Inspired by recent reports on bulk single crystals with aziridinium (AZ) as the A-site cation, we present a facile colloidal synthesis of AZPbBr3 NCs with a narrow size distribution and size tunability down to 4 nm, producing quantum dots (QDs) in the regime of strong quantum confinement. NMR and Raman spectroscopies confirm the stabilization of the AZ cations in the locally distorted cubic structure. AZPbBr3 QDs exhibit bright photoluminescence with quantum efficiencies of up to 80%. Stabilized with cationic and zwitterionic capping ligands, single AZPbBr3 QDs exhibit stable single-photon emission, which is another essential attribute of QDs. In particular, didodecyldimethylammonium bromide and 2-octyldodecyl-phosphoethanolamine ligands afford AZPbBr3 QDs with high spectral stability at both room and cryogenic temperatures, reduced blinking with a characteristic ON fraction larger than 85%, and high single-photon purity (g(2)(0) = 0.1), all comparable to the best-reported values for MAPbBr3 and FAPbBr3 QDs of the same size.
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Affiliation(s)
- Maryna I Bodnarchuk
- Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich 8093, Switzerland
| | - Leon G Feld
- Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich 8093, Switzerland
| | - Chenglian Zhu
- Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich 8093, Switzerland
| | - Simon C Boehme
- Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich 8093, Switzerland
| | - Federica Bertolotti
- Department of Science and High Technology and To.Sca.Lab., University of Insubria, via Valleggio 11, Como 22100, Italy
| | - Jonathan Avaro
- Centre for X-ray Analytics & Laboratory for Biomimetic Membranes and Textiles, Empa, Swiss Federal Laboratories for Materials Science and Technology, St. Gallen 9014, Switzerland
| | - Marcel Aebli
- Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich 8093, Switzerland
| | - Showkat Hassan Mir
- Materials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute (HRI) Allahabad, A C.I. of Homi Bhabha National Institute (HBNI), Chhatnag Road, Jhunsi, Prayagraj (Allahabad) 211019, India
| | - Norberto Masciocchi
- Department of Science and High Technology and To.Sca.Lab., University of Insubria, via Valleggio 11, Como 22100, Italy
| | - Rolf Erni
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Sudip Chakraborty
- Materials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute (HRI) Allahabad, A C.I. of Homi Bhabha National Institute (HBNI), Chhatnag Road, Jhunsi, Prayagraj (Allahabad) 211019, India
| | - Antonietta Guagliardi
- Istituto di Cristallografia and To.Sca.Lab, Consiglio Nazionale delle Ricerche, via Valleggio 11, Como 22100, Italy
| | - Gabriele Rainò
- Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich 8093, Switzerland
| | - Maksym V Kovalenko
- Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich 8093, Switzerland
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, South Korea
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13
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Shin D, Lee HJ, Jung D, Chae JA, Park JW, Lim J, Im S, Min S, Hwang E, Lee DC, Park YS, Chang JH, Park K, Kim J, Park JS, Bae WK. Growth Control of InP/ZnSe Heterostructured Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312250. [PMID: 38300222 DOI: 10.1002/adma.202312250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Revised: 01/23/2024] [Indexed: 02/02/2024]
Abstract
The morphology of heterostructured semiconductor nanocrystals (h-NCs) dictates the spatial distribution of charge carriers and their recombination dynamics and/or transport, which are the main performance indicators of photonic applications utilizing h-NCs. The inability to control the morphology of heterovalent III-V/II-VI h-NCs composed of heavy-metal-free elements hinders their practical use. As a case study of III-V/II-VI h-NCs, the growth control of ZnSe epilayers on InP NCs is demonstrated here. The anisotropic morphology in InP/ZnSe h-NCs is attributed to the facet-dependent energy costs for the growth of ZnSe epilayers on different facets of InP NCs, and effective chemical means for controlling the growth rates of ZnSe on different surface planes are demonstrated. Ultimately, this article capitalizes on the controlled morphology of InP/ZnSe h-NCs to expand their photophysical characteristics from stable and pure emission to environment-sensitive one, which will facilitate their use in a variety of photonic applications.
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Affiliation(s)
- Doyoon Shin
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hak June Lee
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Dongju Jung
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jong Ah Chae
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jeong Woo Park
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Seongbin Im
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sejong Min
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Young-Shin Park
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Jun Hyuk Chang
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kyoungwon Park
- Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam, 13509, Republic of Korea
| | - Junki Kim
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Ji-Sang Park
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
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14
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Li X, Du J, Zhao G, Zhang B, Livache C, Ahn N, Jia Y, Li M, Chen Y, Zhu J, Guo J, Klimov VI, Wu K. Two-Color Amplified Spontaneous Emission from Auger-Suppressed Quantum Dots in Liquids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308979. [PMID: 38009644 DOI: 10.1002/adma.202308979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2023] [Revised: 11/06/2023] [Indexed: 11/29/2023]
Abstract
Colloidal quantum-dot (QD) lasing is normally achieved in close-packed solid-state films, as a high QD volume fraction is required for stimulated emission to outcompete fast Auger decay of optical-gain-active multiexciton states. Here a new type of liquid optical-gain medium is demonstrated, in which compact compositionally-graded QDs (ccg-QDs) that feature strong suppression of Auger decay are liquefied using a small amount of solvent. Transient absorption measurements of ccg-QD liquid suspensions reveal broad-band optical gain spanning a wide spectral range from 560 (green) to 675 nm (red). The gain magnitude is sufficient to realize a two-color amplified spontaneous emission (ASE) at 637 and 594 nm due to the band-edge (1S) and the excited-state (1P) transition, respectively. Importantly, the ASE regime is achieved using quasicontinuous excitation with nanosecond pulses. Furthermore, the ASE is highly stable under prolonged excitation, which stands in contrast to traditional dyes that exhibit strong degradation under identical excitation conditions. These observations point toward a considerable potential of high-density ccg-QD suspensions as liquid, dye-like optical gain media that feature readily achievable spectral tunability and stable operation under intense photoexcitation.
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Affiliation(s)
- Xueyang Li
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Jun Du
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Guohui Zhao
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Boyu Zhang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Clément Livache
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Namyoung Ahn
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Yuxi Jia
- University of Chinese Academy of Sciences, Beijing, 100049, China
- CAS Key Laboratory of Chemical Lasers, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Mingrun Li
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Ying Chen
- CAS Key Laboratory of Chemical Lasers, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Jingyi Zhu
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Jingwei Guo
- University of Chinese Academy of Sciences, Beijing, 100049, China
- CAS Key Laboratory of Chemical Lasers, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Victor I Klimov
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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15
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Bi Y, Cao S, Yu P, Du Z, Wang Y, Zheng J, Zou B, Zhao J. Reducing Emission Linewidth of Pure-Blue ZnSeTe Quantum Dots through Shell Engineering toward High Color Purity Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303247. [PMID: 37420332 DOI: 10.1002/smll.202303247] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 06/19/2023] [Indexed: 07/09/2023]
Abstract
High color purity blue quantum dot light-emitting diodes (QLEDs) have great potential applications in the field of ultra-high-definition display. However, the realization of eco-friendly pure-blue QLEDs with a narrow emission linewidth for high color purity remains a significant challenge. Herein, a strategy for fabricating high color purity and efficient pure-blue QLEDs based on ZnSeTe/ZnSe/ZnS quantum dots (QDs) is presented. It is found that by finely controlling the internal ZnSe shell thickness of the QDs, the emission linewidth can be narrowed by reducing the exciton-longitudinal optical phonon coupling and trap states in the QDs. Additionally, the regulation of the QD shell thickness can suppress the Förster energy transfer between QDs in the QLED emission layer, which will help to reduce the emission linewidth of the device. As a result, the fabricated pure-blue (452 nm) ZnSeTe QLED with ultra-narrow electroluminescence linewidth (22 nm) exhibit high color purity with the Commission Internationale de l'Eclairage chromatic coordinates of (0.148, 0.042) and considerable external quantum efficiency (18%). This work provides a demonstration of the preparation of pure-blue eco-friendly QLEDs with both high color purity and efficiency, and it is believed that it will accelerate the application process of eco-friendly QLEDs in ultra-high-definition displays.
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Affiliation(s)
- Yuhe Bi
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Sheng Cao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Peng Yu
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Zhentao Du
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Yunjun Wang
- Suzhou Xingshuo Nanotech Co., Ltd. (Mesolight), Suzhou, 215123, China
| | - Jinju Zheng
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, China
| | - Bingsuo Zou
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Jialong Zhao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
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16
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Wang Y, Zhong Y, Zi J, Lian Z. Type-I CdSe@CdS@ZnS Heterostructured Nanocrystals with Long Fluorescence Lifetime. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7007. [PMID: 37959604 PMCID: PMC10648168 DOI: 10.3390/ma16217007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 10/29/2023] [Accepted: 10/30/2023] [Indexed: 11/15/2023]
Abstract
Conventional single-component quantum dots (QDs) suffer from low recombination rates of photogenerated electrons and holes, which hinders their ability to meet the requirements for LED and laser applications. Therefore, it is urgent to design multicomponent heterojunction nanocrystals with these properties. Herein, we used CdSe quantum dot nanocrystals as a typical model, which were synthesized by means of a colloidal chemistry method at high temperatures. Then, CdS with a wide band gap was used to encapsulate the CdSe QDs, forming a CdSe@CdS core@shell heterojunction. Finally, the CdSe@CdS core@shell was modified through the growth of the ZnS shell to obtain CdSe@CdS@ZnS heterojunction nanocrystal hybrids. The morphologies, phases, structures and performance characteristics of CdSe@CdS@ZnS were evaluated using various analytical techniques, including transmission electron microscopy, X-ray diffraction, UV-vis absorption spectroscopy, fluorescence spectroscopy and time-resolved transient photoluminescence spectroscopy. The results show that the energy band structure is transformed from type II to type I after the ZnS growth. The photoluminescence lifetime increases from 41.4 ns to 88.8 ns and the photoluminescence quantum efficiency reaches 17.05% compared with that of pristine CdSe QDs. This paper provides a fundamental study and a new route for studying light-emitting devices and biological imaging based on multicomponent QDs.
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Affiliation(s)
| | | | | | - Zichao Lian
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China; (Y.W.); (Y.Z.); (J.Z.)
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17
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Baek GW, Seo SG, Hahm D, Kim YJ, Kim K, Lee T, Kim J, Bae WK, Jin SH, Kwak J. Optimum Design Configuration of Thin-Film Transistors and Quantum-Dot Light-Emitting Diodes for Active-Matrix Displays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304717. [PMID: 37516451 DOI: 10.1002/adma.202304717] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Revised: 07/20/2023] [Indexed: 07/31/2023]
Abstract
Active matrix (AM) quantum-dot light-emitting diodes (QLEDs) driven by thin-film transistors (TFTs) have attracted significant attention for use in next-generation displays. Several challenges remain for the realisation of AM-QLEDs, such as device design, fabrication process, and integration between QLEDs and TFTs, depending on their device structures and configurations. Herein, efficient and stable AM-QLEDs are demonstrated using conventional and inverted structured QLEDs (C- and I-QLEDs, respectively) combined with facile type-convertible (p- and n-type) single-walled carbon nanotube (SWNT)-based TFTs. Based on the four possible configurations of the QLED-TFT subpixel, the performance of the SWNT TFT-driven QLEDs and the fabrication process to determine the ideal configuration are compared, taking advantage of each structure for AM-QLEDs. The QLEDs and TFTs are also optimized to maximise the performance of the AM-QLEDs-the inner shell composition of quantum dots and carrier type of TFTs-resulting in a maximum external quantum efficiency and operational lifetime (at an initial luminance of 100 cd m2 ) of 21.2% and 38 100 000 h for the C-QLED, and 19.1% and 133100000 h for the I-QLED, respectively. Finally, a 5×5 AM-QLED display array controlled using SWNT TFTs is successfully demonstrated. This study is expected to contribute to the development of advanced AM-QLED displays.
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Affiliation(s)
- Geun Woo Baek
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seung Gi Seo
- Department of Electronic Engineering, Incheon National University, Incheon, 22012, Republic of Korea
| | - Donghyo Hahm
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Yeon Jun Kim
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kyunghwan Kim
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Taesoo Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jaeyoul Kim
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sung Hun Jin
- Department of Electronic Engineering, Incheon National University, Incheon, 22012, Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
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18
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Gao Y, Li B, Liu X, Shen H, Song Y, Song J, Yan Z, Yan X, Chong Y, Yao R, Wang S, Li LS, Fan F, Du Z. Minimizing heat generation in quantum dot light-emitting diodes by increasing quasi-Fermi-level splitting. NATURE NANOTECHNOLOGY 2023; 18:1168-1174. [PMID: 37474685 DOI: 10.1038/s41565-023-01441-z] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Accepted: 06/02/2023] [Indexed: 07/22/2023]
Abstract
Minimizing heat accumulation is essential to prolonging the operational lifetime of quantum dot light-emitting diodes (QD-LEDs). Reducing heat generation at the source is the ideal solution, which requires high brightness and quantum efficiency at low driving voltages. Here we propose to enhance the brightness of QD-LEDs at low driving voltages by using a monolayer of large QDs to reduce the packing number in the emitting layer. This strategy allows us to achieve a higher charge population per QD for a given number of charges without charge leakage, enabling enhanced quasi-Fermi-level splitting and brightness at low driving voltage. Due to the minimized heat generation, these LEDs show a high power conversion efficiency of 23% and a T95 operation lifetime (the time for the luminance to decrease to 95% of the initial value) of more than 48,000 h at 1,000 cd m-2.
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Affiliation(s)
- Yan Gao
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China
| | - Bo Li
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Xiaonan Liu
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China
| | - Huaibin Shen
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China.
| | - Yang Song
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Jiaojiao Song
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China
| | - Zhijie Yan
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Xiaohan Yan
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Yihua Chong
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China
| | - Ruyun Yao
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China
| | - Shujie Wang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China
| | - Lin Song Li
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China
| | - Fengjia Fan
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.
| | - Zuliang Du
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China.
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19
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Proppe AH, Berkinsky DB, Zhu H, Šverko T, Kaplan AEK, Horowitz JR, Kim T, Chung H, Jun S, Bawendi MG. Highly stable and pure single-photon emission with 250 ps optical coherence times in InP colloidal quantum dots. NATURE NANOTECHNOLOGY 2023; 18:993-999. [PMID: 37386140 DOI: 10.1038/s41565-023-01432-0] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2023] [Accepted: 05/29/2023] [Indexed: 07/01/2023]
Abstract
Quantum photonic technologies such as quantum communication, sensing or computation require efficient, stable and pure single-photon sources. Epitaxial quantum dots (QDs) have been made capable of on-demand photon generation with high purity, indistinguishability and brightness, although they require precise fabrication and face challenges in scalability. By contrast, colloidal QDs are batch synthesized in solution but typically have broader linewidths, low single-photon purities and unstable emission. Here we demonstrate spectrally stable, pure and narrow-linewidth single-photon emission from InP/ZnSe/ZnS colloidal QDs. Using photon correlation Fourier spectroscopy, we observe single-dot linewidths as narrow as ~5 µeV at 4 K, giving a lower-bounded optical coherence time, T2, of ~250 ps. These dots exhibit minimal spectral diffusion on timescales of microseconds to minutes, and narrow linewidths are maintained on timescales up to 50 ms, orders of magnitude longer than other colloidal systems. Moreover, these InP/ZnSe/ZnS dots have single-photon purities g(2)(τ = 0) of 0.077-0.086 in the absence of spectral filtering. This work demonstrates the potential of heavy-metal-free InP-based QDs as spectrally stable sources of single photons.
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Affiliation(s)
- Andrew H Proppe
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - David B Berkinsky
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hua Zhu
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Tara Šverko
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Alexander E K Kaplan
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jonah R Horowitz
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Taehyung Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Republic of Korea
| | - Heejae Chung
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Republic of Korea
| | - Shinae Jun
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Republic of Korea
| | - Moungi G Bawendi
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA.
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20
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Abstract
Lasers and optical amplifiers based on solution-processable materials have been long-desired devices for their compatibility with virtually any substrate, scalability, and ease of integration with on-chip photonics and electronics. These devices have been pursued across a wide range of materials including polymers, small molecules, perovskites, and chemically prepared colloidal semiconductor nanocrystals, also commonly referred to as colloidal quantum dots. The latter materials are especially attractive for implementing optical-gain media as in addition to being compatible with inexpensive and easily scalable chemical techniques, they offer multiple advantages derived from a zero-dimensional character of their electronic states. These include a size-tunable emission wavelength, low optical gain thresholds, and weak sensitivity of lasing characteristics to variations in temperature. Here we review the status of colloidal nanocrystal lasing devices, most recent advances in this field, outstanding challenges, and the ongoing progress toward technological viable devices including colloidal quantum dot laser diodes.
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Affiliation(s)
- Namyoung Ahn
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Clément Livache
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Valerio Pinchetti
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Victor I Klimov
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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21
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Lee HJ, Im S, Jung D, Kim K, Chae JA, Lim J, Park JW, Shin D, Char K, Jeong BG, Park JS, Hwang E, Lee DC, Park YS, Song HJ, Chang JH, Bae WK. Coherent heteroepitaxial growth of I-III-VI 2 Ag(In,Ga)S 2 colloidal nanocrystals with near-unity quantum yield for use in luminescent solar concentrators. Nat Commun 2023; 14:3779. [PMID: 37355655 DOI: 10.1038/s41467-023-39509-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Accepted: 06/14/2023] [Indexed: 06/26/2023] Open
Abstract
Colloidal Ag(In,Ga)S2 nanocrystals (AIGS NCs) with the band gap tunability by their size and composition within visible range have garnered surging interest. High absorption cross-section and narrow emission linewidth of AIGS NCs make them ideally suited to address the challenges of Cd-free NCs in wide-ranging photonic applications. However, AIGS NCs have shown relatively underwhelming photoluminescence quantum yield (PL QY) to date, primarily because coherent heteroepitaxy has not been realized. Here, we report the heteroepitaxy for AIGS-AgGaS2 (AIGS-AGS) core-shell NCs bearing near-unity PL QYs in almost full visible range (460 to 620 nm) and enhanced photochemical stability. Key to the successful growth of AIGS-AGS NCs is the use of the Ag-S-Ga(OA)2 complex, which complements the reactivities among cations for both homogeneous AIGS cores in various compositions and uniform AGS shell growth. The heteroepitaxy between AIGS and AGS results in the Type I heterojunction that effectively confines charge carriers within the emissive core without optically active interfacial defects. AIGS-AGS NCs show higher extinction coefficient and narrower spectral linewidth compared to state-of-the-art heavy metal-free NCs, prompting their immediate use in practicable applications including displays and luminescent solar concentrators (LSCs).
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Affiliation(s)
- Hak June Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seongbin Im
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Dongju Jung
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kyuri Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jong Ah Chae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jeong Woo Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doyoon Shin
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kookheon Char
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byeong Guk Jeong
- School of Chemical and Biomolecular Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Ji-Sang Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Young-Shin Park
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Hyung-Jun Song
- Department of Safety Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea.
| | - Jun Hyuk Chang
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
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22
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Abstract
There has been a recent surge of advances in biomolecular assays based on the measurement of discrete molecular targets as opposed to signals averaged across molecular ensembles. Many of these "digital" assay designs derive from now-mature technologies involving single-molecule imaging and microfluidics and provide an assortment of new modalities to quantify nucleic acids and proteins in biospecimens such as blood and tissue homogenates. A primary new benefit is the robust detection of trace analytes at attomolar to femtomolar concentrations for which many ensemble assays cannot distinguish signals above noise levels. In addition, multiple biomolecules can be differentiated within a mixture using optical barcodes, with much faster and simpler readouts compared with sequencing methods. In ideal digital assays, signals should, in theory, further represent absolute molecular counts, rather than relative levels, eliminating the need for calibration standards that are the mainstay of typical assays. Several digital assay platforms have now been commercialized but challenges hinder the adoption and diversification of these new formats, as there are broad needs to balance sensitivity and dynamic range of detection, increase analyte multiplexing, improve sample throughput, and reduce cost. Our lab and others have developed technologies to address these challenges by redesigning molecular probes and labels, improving molecular transport within detection focal volumes, and applying solution-based readout methods in flow.This Account describes the principles, formats, and design constraints of digital biomolecular assays that apply optical labels toward the goal of simple and routine target counting that may ultimately approach absolute readout standards. The primary challenges can be understood from fundamental concepts in thermodynamics and kinetics of association reactions, mass transport, and discrete statistics. Major advances include (1) new inorganic nanocrystal probes for more robust counting compared with dyes, (2) diverse molecular amplification tools that endow attachment of numerous labels to single targets, (3) specialized surfaces with patterned features for electromagnetic coupling to labels for signal amplification, (4) surface capture enhancement methods to concentrate targets through disruption of diffusion depletion zones, and (5) flow counting in which analytes are rapidly counted in solution without pull-down to a surface. Further progress and integration of these tools for biomolecular counting could improve the precision of laboratory measurements in life sciences research and benefit clinical diagnostic assays for low abundance biomarkers in limiting biospecimen volumes that are out of reach of traditional ensemble-level bioassays.
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Affiliation(s)
- Chia-Wei Kuo
- Department of Bioengineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Andrew M Smith
- Department of Bioengineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Carl R. Woese Institute for Genomic Biology, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Department of Materials Science & Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Cancer Center at Illinois, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Carle Illinois College of Medicine, Urbana, Illinois 61801, United States
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23
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Ahn N, Livache C, Pinchetti V, Jung H, Jin H, Hahm D, Park YS, Klimov VI. Electrically driven amplified spontaneous emission from colloidal quantum dots. Nature 2023; 617:79-85. [PMID: 37138110 PMCID: PMC10156592 DOI: 10.1038/s41586-023-05855-6] [Citation(s) in RCA: 32] [Impact Index Per Article: 32.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 02/16/2023] [Indexed: 05/05/2023]
Abstract
Colloidal quantum dots (QDs) are attractive materials for realizing solution-processable laser diodes that could benefit from size-controlled emission wavelengths, low optical-gain thresholds and ease of integration with photonic and electronic circuits1-7. However, the implementation of such devices has been hampered by fast Auger recombination of gain-active multicarrier states1,8, poor stability of QD films at high current densities9,10 and the difficulty to obtain net optical gain in a complex device stack wherein a thin electroluminescent QD layer is combined with optically lossy charge-conducting layers11-13. Here we resolve these challenges and achieve amplified spontaneous emission (ASE) from electrically pumped colloidal QDs. The developed devices use compact, continuously graded QDs with suppressed Auger recombination incorporated into a pulsed, high-current-density charge-injection structure supplemented by a low-loss photonic waveguide. These colloidal QD ASE diodes exhibit strong, broadband optical gain and demonstrate bright edge emission with instantaneous power of up to 170 μW.
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Affiliation(s)
- Namyoung Ahn
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Clément Livache
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Valerio Pinchetti
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Heeyoung Jung
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
- Center for High Technology Materials, University of New Mexico, Albuquerque, NM, USA
| | - Ho Jin
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
- Center for High Technology Materials, University of New Mexico, Albuquerque, NM, USA
| | - Donghyo Hahm
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Young-Shin Park
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Victor I Klimov
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA.
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24
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Ahn N, Park YS, Livache C, Du J, Gungor K, Kim J, Klimov VI. Optically Excited Lasing in a Cavity-Based, High-Current-Density Quantum Dot Electroluminescent Device. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206613. [PMID: 36528387 DOI: 10.1002/adma.202206613] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Revised: 10/31/2022] [Indexed: 06/17/2023]
Abstract
Laser diodes based on solution-processable materials can benefit numerous technologies including integrated electronics and photonics, telecommunications, and medical diagnostics. An attractive system for implementing these devices is colloidal semiconductor quantum dots (QDs). The progress towards a QD laser diode has been hampered by rapid nonradiative Auger decay of optical-gain-active multicarrier states, fast device degradation at high current densities required for laser action, and unfavorable competition between optical gain and optical losses in a multicomponent device stack. Here we resolve some of these challenges and demonstrate optically excited lasing from fully functional high-current density electroluminescent (EL) devices with an integrated optical resonator. This advance has become possible due to excellent optical gain properties of continuously graded QDs and a refined device architecture, which allows for highly efficient light amplification in a thin, EL-active QD layer.
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Affiliation(s)
- Namyoung Ahn
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Young-Shin Park
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Clément Livache
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Jun Du
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Kivanc Gungor
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Jaehoon Kim
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Victor I Klimov
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
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25
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Berkinsky DB, Proppe AH, Utzat H, Krajewska CJ, Sun W, Šverko T, Yoo JJ, Chung H, Won YH, Kim T, Jang E, Bawendi MG. Narrow Intrinsic Line Widths and Electron-Phonon Coupling of InP Colloidal Quantum Dots. ACS NANO 2023; 17:3598-3609. [PMID: 36758155 DOI: 10.1021/acsnano.2c10237] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
InP quantum dots (QDs) are the material of choice for QD display applications and have been used as active layers in QD light-emitting diodes (QDLEDs) with high efficiency and color purity. Optimizing the color purity of QDs requires understanding mechanisms of spectral broadening. While ensemble-level broadening can be minimized by synthetic tuning to yield monodisperse QD sizes, single QD line widths are broadened by exciton-phonon scattering and fine-structure splitting. Here, using photon-correlation Fourier spectroscopy, we extract average single QD line widths of 50 meV at 293 K for red-emitting InP/ZnSe/ZnS QDs, among the narrowest for colloidal QDs. We measure InP/ZnSe/ZnS single QD emission line shapes at temperatures between 4 and 293 K and model the spectra using a modified independent boson model. We find that inelastic acoustic phonon scattering and fine-structure splitting are the most prominent broadening mechanisms at low temperatures, whereas pure dephasing from elastic acoustic phonon scattering is the primary broadening mechanism at elevated temperatures, and optical phonon scattering contributes minimally across all temperatures. Conversely for CdSe/CdS/ZnS QDs, we find that optical phonon scattering is a larger contributor to the line shape at elevated temperatures, leading to intrinsically broader single-dot line widths than for InP/ZnSe/ZnS. We are able to reconcile narrow low-temperature line widths and broad room-temperature line widths within a self-consistent model that enables parametrization of line width broadening, for different material classes. This can be used for the rational design of more spectrally narrow materials. Our findings reveal that red-emitting InP/ZnSe/ZnS QDs have intrinsically narrower line widths than typically synthesized CdSe QDs, suggesting that these materials could be used to realize QDLEDs with high color purity.
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Affiliation(s)
- David B Berkinsky
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Andrew H Proppe
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hendrik Utzat
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Chantalle J Krajewska
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Weiwei Sun
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tara Šverko
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jason J Yoo
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Heejae Chung
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Gyeonggi-do 16678, Republic of Korea
| | - Yu-Ho Won
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Gyeonggi-do 16678, Republic of Korea
| | - Taehyung Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Gyeonggi-do 16678, Republic of Korea
| | - Eunjoo Jang
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Gyeonggi-do 16678, Republic of Korea
| | - Moungi G Bawendi
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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26
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Heteroepitaxial chemistry of zinc chalcogenides on InP nanocrystals for defect-free interfaces with atomic uniformity. Nat Commun 2023; 14:43. [PMID: 36596807 PMCID: PMC9810615 DOI: 10.1038/s41467-022-35731-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Accepted: 12/19/2022] [Indexed: 01/05/2023] Open
Abstract
Heteroepitaxy on colloidal semiconductor nanocrystals is an essential strategy for manipulating their optoelectronic functionalities. However, their practical synthesis typically leads to scattered and unexpected outcomes due to the intervention of multiple reaction pathways associated with complicated side products of reactants. Here, the heteroepitaxy mechanism of zinc chalcogenide initiated on indium phosphide (InP) colloidal nanocrystals is elucidated using the precursors, zinc carboxylate and trialkylphosphine selenide. The high magnetic receptivity of 77Se and the characteristic longitudinal optical phonon mode of ZnSe allowed for monitoring the sequence of epilayer formation at the molecular level. The investigation revealed the sterically hindered acyloxytrialkylphosphonium and diacyloxytrialkylphosphorane to be main intermediates in the surface reaction, which retards the metal ion adsorption by a large steric hindrance. The transformation of adsorbates to the crystalline epilayer was disturbed by surface oxides. Raman scattering disclosed the pathway of secondary surface oxidation triggered by carboxylate ligands migrated from zinc carboxylate. The surface-initiated heteroepitaxy protocol is proposed to fabricate core/shell heterostructured nanocrystals with atomic-scale uniformity of epilayers. Despite the large lattice mismatch of ZnS to InP, we realised a uniform and interface defect-free ZnS epilayer (~0.3 nm thickness) on InP nanocrystals, as evidenced by a high photoluminescence quantum yield of 97.3%.
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Abstract
Anisotropic heterostructures of colloidal nanocrystals embed size-, shape-, and composition-dependent electronic structure within variable three-dimensional morphology, enabling intricate design of solution-processable materials with high performance and programmable functionality. The key to designing and synthesizing such complex materials lies in understanding the fundamental thermodynamic and kinetic factors that govern nanocrystal growth. In this review, nanorod heterostructures, the simplest of anisotropic nanocrystal heterostructures, are discussed with respect to their growth mechanisms. The effects of crystal structure, surface faceting/energies, lattice strain, ligand sterics, precursor reactivity, and reaction temperature on the growth of nanorod heterostructures through heteroepitaxy and cation exchange reactions are explored with currently known examples. Understanding the role of various thermodynamic and kinetic parameters enables the controlled synthesis of complex nanorod heterostructures that can exhibit unique tailored properties. Selected application prospects arising from such capabilities are then discussed.
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Affiliation(s)
- Gryphon A Drake
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 United States
| | - Logan P Keating
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 United States
| | - Moonsub Shim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 United States
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28
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Kim D, Shcherbakov-Wu W, Ha SK, Lee WS, Tisdale WA. Uniaxial Strain Engineering via Core Position Control in CdSe/CdS Core/Shell Nanorods and Their Optical Response. ACS NANO 2022; 16:14713-14722. [PMID: 36044017 DOI: 10.1021/acsnano.2c05427] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Anisotropic strain engineering has emerged as a powerful strategy for enhancing the optoelectronic performance of semiconductor nanocrystals. Here, we show that CdSe/CdS dot-in-rod structures offer a platform for fine-tuning the optical response of CdSe quantum dots through anisotropic strain. By controlling the spatial position of the CdSe core within a growing CdS nanorod shell, varying degrees of uniaxial strain can be introduced. Placing CdSe cores at the end of the CdS nanorod induces strong asymmetric compression along the c-axis of the wurtzite CdSe core, dramatically altering its absorption and emission characteristics, whereas CdSe cores located near the middle of the nanorod experience a comparatively weak uniaxial strain field. The change in absorption and emission spectra and dynamics for highly strained end-position CdSe/CdS nanorods is explained by (1) relative shifting of the valence band light hole and heavy hole levels and (2) introduction of a strong piezoelectric potential, which spatially separates the electron and hole wave functions. The ability to tune the degree of uniaxial strain through core position control in a nanorod structure creates opportunities for precisely modulating the electronic properties of CdSe nanocrystals while simultaneously taking advantage of dielectric and optical anisotropies intrinsic to 1D nanostructures.
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Affiliation(s)
- Dahin Kim
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Wenbi Shcherbakov-Wu
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Seung Kyun Ha
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Woo Seok Lee
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - William A Tisdale
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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Lv L, Liu S, Li J, Lei H, Qin H, Peng X. Synthesis of Weakly Confined, Cube-Shaped, and Monodisperse Cadmium Chalcogenide Nanocrystals with Unexpected Photophysical Properties. J Am Chem Soc 2022; 144:16872-16882. [PMID: 36067446 DOI: 10.1021/jacs.2c05151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Zinc-blende CdSe, CdS, and CdSe/CdS core/shell nanocrystals with a structure-matched shape (cube-shaped, edge length ≤30 nm) are synthesized via a universal scheme. With the edge length up to five times larger than exciton diameter of the bulk semiconductors, the nanocrystals exhibit novel properties in the weakly confined size regime, such as near-unity single exciton and biexciton photoluminescence (PL) quantum yields, single-nanocrystal PL nonblinking, mixed PL decay dynamics of exciton and free carriers with sub-microsecond monoexponential decay lifetime, and stable yet extremely narrow PL full width at half maximum (FWHM < 0.1 meV) at 1.8 K. Their monodisperse edge length, shape, and facet structure enable demonstration of unexpected yet size-dependent PL properties at room temperature, including unusually broad and abnormally size-dependent PL FWHM (∼100 meV), nonmonotonic size dependence of PL peak energy, and dual-peak single-exciton PL. Calculations suggest that these unusual properties should be originated from the band-edge electron/hole states of the dynamic-exciton, whose exciton binding energy is too small to hold the photogenerated electron-hole pair as a bonded Wannier exciton in a weakly confined nanocrystal.
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Affiliation(s)
- Liulin Lv
- Key Laboratory of Excited-State Materials of Zhejiang Province, and Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Shaojie Liu
- Key Laboratory of Excited-State Materials of Zhejiang Province, and Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Jiongzhao Li
- Key Laboratory of Excited-State Materials of Zhejiang Province, and Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Haixin Lei
- Key Laboratory of Excited-State Materials of Zhejiang Province, and Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Haiyan Qin
- Key Laboratory of Excited-State Materials of Zhejiang Province, and Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Xiaogang Peng
- Key Laboratory of Excited-State Materials of Zhejiang Province, and Department of Chemistry, Zhejiang University, Hangzhou 310027, China
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30
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Gupta A, Ondry JC, Chen M, Hudson MH, Coropceanu I, Sarma NA, Talapin DV. Diffusion-Limited Kinetics of Isovalent Cation Exchange in III-V Nanocrystals Dispersed in Molten Salt Reaction Media. NANO LETTERS 2022; 22:6545-6552. [PMID: 35952655 PMCID: PMC9413424 DOI: 10.1021/acs.nanolett.2c01699] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Revised: 08/06/2022] [Indexed: 06/15/2023]
Abstract
The goal of this work is to determine the kinetic factors that govern isovalent cation exchange in III-V colloidal quantum dots using molten salts as the solvent and cation source. We focus on the reactions of InP + GaI3→ In1-xGaxP and InAs + GaI3→ In1-xGaxAs to create technologically important ternary III-V phases. We find that the molten salt reaction medium causes the transformation of nearly spherical InP nanocrystals to tetrahedron-shaped In1-xGaxP nanocrystals. Furthermore, we determine that the activation energy for the cation exchange reaction is 0.9 eV for incorporation of Ga into InP and 1.2 eV for incorporation of Ga into InAs, both much lower than the measured values in bulk semiconductors. Next, we use powder XRD simulations to constrain our understanding of the structure of the In1-xGaxP nanocrystals. Together our results reveal several important features of molten salt-mediated cation exchange and provide guidance for future development of these materials.
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Affiliation(s)
- Aritrajit Gupta
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Justin C. Ondry
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Min Chen
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Margaret H. Hudson
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Igor Coropceanu
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Nivedina A. Sarma
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Dmitri V. Talapin
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Center
for Nanoscale Materials, Argonne National
Laboratory, Argonne, Illinois 60439, United
States
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31
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Liao C, Tang L, Li Y, Sun S, Wang L, Xu J, Jia Y, Gu Z. Toward temperature-insensitive near-infrared optical gain using low-toxicity Ag 2Se quantum dots. NANOSCALE 2022; 14:10169-10175. [PMID: 35796251 DOI: 10.1039/d2nr01145j] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
With the growing demand for developing lasers with high stability and integration, temperature-insensitive gain materials are highly desirable. Here, temperature-insensitive near-infrared (NIR) optical gain from low-toxicity Ag2Se quantum dots (QDs) is reported. Due to the large energy splitting between the band-edge hole state and the following state (∼430 meV), the thermal depopulation of the band-edge hole state in Ag2Se QDs is significantly suppressed. The long biexciton lifetime (245 ps at 300 K) of the QDs is sufficient to support the establishment of amplified spontaneous emission (ASE). Consequently, the characteristic temperature of the ASE threshold for the Ag2Se QD film is as high as 360 K, and efficient NIR ASE is observed up to 340 K. In addition, when the temperature is lower than 200 K, the ASE peak position is temperature insensitive because acoustic phonons cannot be effectively excited. Our findings reveal that Ag2Se QDs can be utilized as an excellent gain material for environmentally friendly temperature-insensitive NIR lasers.
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Affiliation(s)
- Chen Liao
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Luping Tang
- College of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Yan Li
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Shaoling Sun
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Liye Wang
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Jie Xu
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Yunzhe Jia
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Zixuan Gu
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
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Jung H, Park YS, Ahn N, Lim J, Fedin I, Livache C, Klimov VI. Two-band optical gain and ultrabright electroluminescence from colloidal quantum dots at 1000 A cm -2. Nat Commun 2022; 13:3734. [PMID: 35768407 PMCID: PMC9243032 DOI: 10.1038/s41467-022-31189-4] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Accepted: 06/08/2022] [Indexed: 11/09/2022] Open
Abstract
Colloidal quantum dots (QDs) are attractive materials for the realization of solution-processable laser diodes. Primary challenges towards this objective are fast optical-gain relaxation due to nonradiative Auger recombination and poor stability of colloidal QD solids under high current densities required to obtain optical gain. Here we resolve these challenges and achieve broad-band optical gain spanning the band-edge (1S) and the higher-energy (1P) transitions. This demonstration is enabled by continuously graded QDs with strongly suppressed Auger recombination and a current-focusing device design, combined with short-pulse pumping. Using this approach, we achieve ultra-high current densities (~1000 A cm−2) and brightness (~10 million cd m−2), and demonstrate an unusual two-band electroluminescence regime for which the 1P band is more intense than the 1S feature. This implies the realization of extremely large QD occupancies of up to ~8 excitons per-dot, which corresponds to complete filling of the 1S and 1P electron shells. Nonradiative Auger recombination and poor stability of colloidal-quantum-dot solids at high current densities are primary obstacles to the realization of laser diodes based on these materials. Jung et al. achieve the current densities in excess of 1,000 A cm−2, which allows them to boost brightness to ~10 million cd m−2 and to produce strong, two-band optical gain.
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Affiliation(s)
- Heeyoung Jung
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Young-Shin Park
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.,Centre for High Technology Materials, University of New Mexico, Albuquerque, NM, 87131, USA
| | - Namyoung Ahn
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Jaehoon Lim
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.,Department of Energy Science and Centre for Artificial Atom, Sungkyunkwan University, Natural Sciences Campus, Seobu-ro 2066, Jangan-gu, Suwon, 16419, Gyeonggi-do, Republic of Korea
| | - Igor Fedin
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Clément Livache
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Victor I Klimov
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
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Liu H, Wang Y, Yang X, Zhao X, Wang K, Wu M, Zuo X, Yang W, Sui Y, Zou B. Pressure-stimulus-responsive behaviors of core-shell InP/ZnSe nanocrystals: remarkable piezochromic luminescence and structural assembly. NANOSCALE 2022; 14:7530-7537. [PMID: 35481922 DOI: 10.1039/d2nr00281g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Piezochromic luminescence materials with optical properties can be adjusted (the colors most sensitive to the human eye range from red to green) to provide powerful means for information acquisition in various applications. Inorganic quantum dots, typically based on heavy metals such as cadmium and lead, have congenital advantages as luminescence materials, including strong inoxidizability and excellent photoelectric properties. However, small band-gap shifts under pressure have hindered the development of inorganic-based piezochromic materials. Herein, we combined in situ high-pressure photoluminescence (PL) and absorption measurements with synchrotron X-ray scattering spectra to elucidate the remarkable modulation of optical properties and morphologies by pressure, particularly that of the piezochromic luminescence, in all-inorganic core-shell InP/ZnSe nanocrystals (NCs). We observed a stepwise PL color change from red to green, and an ultrabroad bandgap tunability of 0.46 eV was observed from 1.99 to 2.45 eV in the pressure range of 14.2 GPa for InP/ZnSe NCs. Moreover, two-dimensional (2D) InP/ZnSe nanosheets were synthesized by the stress-driven attachment of nanoparticles. These results demonstrate the ability of the pressure-stimulus response to trigger remarkable piezochromic luminescence and 2D nanosheet assembly in InP/ZnSe NCs, which paves the way for new applications of all-inorganic InP-based semiconductor NCs.
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Affiliation(s)
- Hao Liu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
- School of Physics and Electronic Engineering, Xinxiang University, Xinxiang 453003, China
| | - Yixuan Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
| | - Xinyi Yang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
| | - Xiaohui Zhao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
| | - Kai Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
| | - Min Wu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
| | - Xiaobing Zuo
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Wenge Yang
- Center for High-Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Yongming Sui
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
| | - Bo Zou
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
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34
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Li H, Zhang W, Bian Y, Ahn TK, Shen H, Ji B. ZnF 2-Assisted Synthesis of Highly Luminescent InP/ZnSe/ZnS Quantum Dots for Efficient and Stable Electroluminescence. NANO LETTERS 2022; 22:4067-4073. [PMID: 35536635 DOI: 10.1021/acs.nanolett.2c00763] [Citation(s) in RCA: 34] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
High-quality InP-based quantum dots (QDs) have become very promising, environmentally benign light emitters for display applications, but their synthesis generally entails hazardous hydrofluoric acid. Here, we present a highly facile route to InP/ZnSe/ZnS core/shell/shell QDs with a near-unity photoluminescence quantum yield. As the key additive, the inorganic salt ZnF2 mildly reacts with carboxylic acid at a high temperature and in situ generates HF, which eliminates surface oxide impurities, thus facilitating epitaxial shell growth. The resulting InP/ZnSe/ZnS QDs exhibit a narrower emission line width and better thermal stability in comparison with QDs synthesized with hydrofluoric acid. Light-emitting diodes using large-sized InP/ZnSe/ZnS QDs without replacing original ligands achieve the highest peak external quantum efficiency of 22.2%, to the best of our knowledge, along with a maximum brightness of >110 000 cd/m2 and a T95 lifetime of >32 000 h at 100 cd/m2. This safe approach is anticipated to be applied for a wide range of III-V QDs.
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Affiliation(s)
- Haiyang Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Wenjing Zhang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
| | - Yangyang Bian
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
| | - Tae Kyu Ahn
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Huaibin Shen
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
| | - Botao Ji
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
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35
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Ultra-narrow room-temperature emission from single CsPbBr 3 perovskite quantum dots. Nat Commun 2022; 13:2587. [PMID: 35546149 PMCID: PMC9095639 DOI: 10.1038/s41467-022-30016-0] [Citation(s) in RCA: 45] [Impact Index Per Article: 22.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Accepted: 03/25/2022] [Indexed: 11/29/2022] Open
Abstract
Semiconductor quantum dots have long been considered artificial atoms, but despite the overarching analogies in the strong energy-level quantization and the single-photon emission capability, their emission spectrum is far broader than typical atomic emission lines. Here, by using ab-initio molecular dynamics for simulating exciton-surface-phonon interactions in structurally dynamic CsPbBr3 quantum dots, followed by single quantum dot optical spectroscopy, we demonstrate that emission line-broadening in these quantum dots is primarily governed by the coupling of excitons to low-energy surface phonons. Mild adjustments of the surface chemical composition allow for attaining much smaller emission linewidths of 35−65 meV (vs. initial values of 70–120 meV), which are on par with the best values known for structurally rigid, colloidal II-VI quantum dots (20−60 meV). Ultra-narrow emission at room-temperature is desired for conventional light-emitting devices and paramount for emerging quantum light sources. Narrow emission is desired for light-emitting devices. Here, Kovalenko et al. demonstrate that the emission line-broadening in perovskite quantum dots is dominated by the coupling between excitons and surface phonon modes which can be controlled by minimal surface modifications.
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36
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Wang L, Bai J, Zhang T, Huang X, Hou T, Xu B, Li D, Li Q, Jin X, Wang Y, Zhang X, Song Y. Controlling the emission linewidths of alloy quantum dots with asymmetric strain. J Colloid Interface Sci 2022; 624:287-295. [DOI: 10.1016/j.jcis.2022.05.140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2022] [Revised: 05/12/2022] [Accepted: 05/23/2022] [Indexed: 11/16/2022]
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37
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Lee Y, Jo DY, Kim T, Jo JH, Park J, Yang H, Kim D. Effectual Interface and Defect Engineering for Auger Recombination Suppression in Bright InP/ZnSeS/ZnS Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12479-12487. [PMID: 35238532 DOI: 10.1021/acsami.1c20088] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The main issue in developing a quantum dot light-emitting diode (QLED) display lies in successfully replacing heavy metals with environmentally benign materials while maintaining high-quality device performance. Nonradiative Auger recombination is one of the major limiting factors of QLED performance and should ideally be suppressed. This study scrutinizes the effects of the shell structure and composition on photoluminescence (PL) properties of InP/ZnSeS/ZnS quantum dots (QDs) through ensemble and single-dot spectroscopic analyses. Employing gradient shells is discovered to suppress Auger recombination to a high degree, allowing charged QDs to be luminescent comparatively with neutral QDs. The "lifetime blinking" phenomenon is observed as evidence of suppressed Auger recombination. Furthermore, single-QD measurements reveal that gradient shells in QDs reduce spectral diffusion and elevate the energy barrier for charge trapping. Shell composition dependency in the gradience effect is observed. An increase in the ZnS composition (ZnS >50%) in the gradient shell introduces lattice mismatch between the core and the shell and therefore rather reverses the effect and reduces the QD performance.
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Affiliation(s)
- YuJin Lee
- Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Dae-Yeon Jo
- Department of Materials Science and Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Taehee Kim
- Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jung-Ho Jo
- Department of Materials Science and Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Jumi Park
- Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Heesun Yang
- Department of Materials Science and Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Dongho Kim
- Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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38
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Song L, Chingin K, Wang M, Zhong D, Chen H, Xu J. Polarity-Specific Profiling of Metabolites in Single Cells by Probe Electrophoresis Mass Spectrometry. Anal Chem 2022; 94:4175-4182. [PMID: 35235307 DOI: 10.1021/acs.analchem.1c03997] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Sensitive analysis of metabolites in a single cell is of fundamental significance for the better understanding of biological variability, differential susceptibility in disease therapy, and cell-to-cell heterogeneity as well. Herein, polarity-specific profiling of metabolites in a single cell was implemented by probe electrophoresis mass spectrometry (PEMS), which combined electrophoresis sampling of metabolites from a single cell and nanoelectrospray ionization-mass spectrometry (nanoESI-MS) analysis of the sampled metabolites. Enhanced extraction of either negatively or positively charged metabolites from a single cell was achieved by applying a DC voltage offset of +2.0 and -2.0 V to the probe, respectively. The experimental data demonstrated that PEMS features high throughput (≥200 peaks) and high sensitivity (≥10-times signal enhancement for [Choline + H]+, [Glutamine + H]+, [Arginine + H]+, etc.) in comparison with direct nanoESI-MS analysis. The biological effects of CdSe quantum dots (QDs) and γ-radiation on Allium cepa cells were investigated by PEMS, which revealed that CdSe QDs lead to the increase of intracellular amines while γ-radiation causes the decrease of intracellular acids. Therefore, this work provides an alternative platform to probe novel insights of cells by sensitive analysis of polarity-specific metabolites in a single cell.
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Affiliation(s)
- Lili Song
- Jiangxi Key Laboratory for Mass Spectrometry and Instrumentation, East China University of Technology, Nanchang 330013, People's Republic of China
| | - Konstantin Chingin
- Jiangxi Key Laboratory for Mass Spectrometry and Instrumentation, East China University of Technology, Nanchang 330013, People's Republic of China
| | - Meng Wang
- Jiangxi Key Laboratory for Mass Spectrometry and Instrumentation, East China University of Technology, Nanchang 330013, People's Republic of China
| | - Dacai Zhong
- Jiangxi Key Laboratory for Mass Spectrometry and Instrumentation, East China University of Technology, Nanchang 330013, People's Republic of China
| | - Huanwen Chen
- Jiangxi Key Laboratory for Mass Spectrometry and Instrumentation, East China University of Technology, Nanchang 330013, People's Republic of China
| | - Jiaquan Xu
- Jiangxi Key Laboratory for Mass Spectrometry and Instrumentation, East China University of Technology, Nanchang 330013, People's Republic of China
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39
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Song Y, Liu R, Wang Z, Xu H, Ma Y, Fan F, Voznyy O, Du J. Enhanced emission directivity from asymmetrically strained colloidal quantum dots. SCIENCE ADVANCES 2022; 8:eabl8219. [PMID: 35196093 PMCID: PMC8865764 DOI: 10.1126/sciadv.abl8219] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Accepted: 12/28/2021] [Indexed: 06/14/2023]
Abstract
Current state-of-the-art quantum dot light-emitting diodes have reached close to unity internal quantum efficiency. Further improvement in external quantum efficiency requires more efficient photon out-coupling. Improving the directivity of the photon emission is considered to be the most feasible approach. Here, we report improved emission directivity from colloidal quantum dot films. By growing an asymmetric compressive shell, we are able to lift their band-edge state degeneracy, which leads to an overwhelming population of exciton with in-plane dipole moment, as desired for high-efficiency photon out-coupling. The in-plane dipole proportion determined by back-focal plane imaging method is 88%, remarkably higher than 70% obtained from conventional hydrostatically strained colloidal quantum dots. Enhanced emission directivity obtained here opens a path to increasing the external quantum efficiencies notably.
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Affiliation(s)
- Yang Song
- Hefei National Laboratory for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ruixiang Liu
- Hefei National Laboratory for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhibo Wang
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Toronto, Ontario M1C 1A4, Canada
| | - Huaiyu Xu
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Yong Ma
- College of Photoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha 410082, China
| | - Fengjia Fan
- Hefei National Laboratory for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Oleksandr Voznyy
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Toronto, Ontario M1C 1A4, Canada
| | - Jiangfeng Du
- Hefei National Laboratory for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
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40
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Jeong BG, Chang JH, Hahm D, Rhee S, Park M, Lee S, Kim Y, Shin D, Park JW, Lee C, Lee DC, Park K, Hwang E, Bae WK. Interface polarization in heterovalent core-shell nanocrystals. NATURE MATERIALS 2022; 21:246-252. [PMID: 34795403 DOI: 10.1038/s41563-021-01119-8] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2020] [Accepted: 08/22/2021] [Indexed: 06/13/2023]
Abstract
The potential profile and the energy level offset of core-shell heterostructured nanocrystals (h-NCs) determine the photophysical properties and the charge transport characteristics of h-NC solids. However, limited material choices for heavy metal-free III-V-II-VI h-NCs pose challenges in comprehensive control of the potential profile. Herein, we present an approach to such a control by steering dipole densities at the interface of III-V-II-VI h-NCs. The controllable heterovalency at the interface is responsible for interfacial dipole densities that result in the vacuum-level shift, providing an additional knob for the control of optical and electrical characteristics of h-NCs. The synthesis of h-NCs with atomic precision allows us to correlate interfacial dipole moments with the NCs' photochemical stability and optoelectronic performance.
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Affiliation(s)
- Byeong Guk Jeong
- SKKU Advanced Institute of Nano Technology and Department of Nano Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Jun Hyuk Chang
- SKKU Advanced Institute of Nano Technology and Department of Nano Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Donghyo Hahm
- SKKU Advanced Institute of Nano Technology and Department of Nano Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Seunghyun Rhee
- SKKU Advanced Institute of Nano Technology and Department of Nano Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Myeongjin Park
- Samsung Display Research Center, Samsung Display, Yongin, Republic of Korea
| | - Sooho Lee
- Samsung Display Research Center, Samsung Display, Yongin, Republic of Korea
| | - Youngdu Kim
- SKKU Advanced Institute of Nano Technology and Department of Nano Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Doyoon Shin
- SKKU Advanced Institute of Nano Technology and Department of Nano Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Jeong Woo Park
- SKKU Advanced Institute of Nano Technology and Department of Nano Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Changhee Lee
- Samsung Display Research Center, Samsung Display, Yongin, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
| | - Kyoungwon Park
- Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nano Technology and Department of Nano Engineering, Sungkyunkwan University, Suwon, Republic of Korea.
| | - Wan Ki Bae
- SKKU Advanced Institute of Nano Technology and Department of Nano Engineering, Sungkyunkwan University, Suwon, Republic of Korea.
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41
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Bradsher CE, Ontko CD, Koziel AC, McBride JR, Rosenthal SJ. Fluorescent Colloidal Ferroelectric Nanocrystals. J Am Chem Soc 2022; 144:1509-1512. [DOI: 10.1021/jacs.1c09821] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
Affiliation(s)
- Cara E. Bradsher
- Department of Chemistry, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
| | - Cayla D. Ontko
- Department of Chemistry, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
| | - Alexandra C. Koziel
- Department of Chemistry, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
| | - James R. McBride
- Department of Chemistry, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
- Vanderbilt Institute for Nanoscale Science and Engineering, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
- Department of Interdisciplinary Materials Science, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
| | - Sandra J. Rosenthal
- Department of Chemistry, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
- Vanderbilt Institute for Nanoscale Science and Engineering, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
- Department of Interdisciplinary Materials Science, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
- Department of Pharmacology, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
- Department of Physics and Astronomy, Vanderbilt University, VU Station B Box 351822, Nashville, Tennessee 37235, United States
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42
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He S, Li Q, Jin T, Lian TT. Contributions of exciton fine structure and hole trapping on the hole state filling effect in the transient absorption spectra of CdSe quantum dots. J Chem Phys 2022; 156:054704. [DOI: 10.1063/5.0081192] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- Sheng He
- Chemistry, Emory University, United States of America
| | - Qiuyang Li
- Physics, University of Michigan, United States of America
| | - Tao Jin
- Chemistry Department, Emory University, United States of America
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43
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Lee T, Kim BJ, Lee H, Hahm D, Bae WK, Lim J, Kwak J. Bright and Stable Quantum Dot Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106276. [PMID: 34706113 DOI: 10.1002/adma.202106276] [Citation(s) in RCA: 56] [Impact Index Per Article: 28.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2021] [Revised: 10/22/2021] [Indexed: 06/13/2023]
Abstract
Quantum dot light-emitting diodes (QLEDs) are one of the most promising candidates for next-generation displays and lighting sources, but they are barely used because vulnerability to electrical and thermal stresses precludes high brightness, efficiency, and stability at high current density (J) regimes. Here, bright and stable QLEDs on a Si substrate are demonstrated, expanding their potential application boundary over the present art. First, a tailored interface is granted to the quantum dots, maximizing the quantum yield and mitigating nonradiative Auger decay of the multiexcitons generated at high-J regimes. Second, a heat-endurable, top-emission device architecture is employed and optimized based on optical simulation to enhance the light outcoupling efficiency. The multilateral approaches realize that the red top-emitting QLEDs exhibit a maximum luminance of 3 300 000 cd m-2 , a current efficiency of 75.6 cd A-1 , and an operational lifetime of 125 000 000 h at an initial brightness of 100 cd m-2 , which are the highest of the values reported so far.
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Affiliation(s)
- Taesoo Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byong Jae Kim
- Department of Energy Science and Center for Artificial Atoms, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Hyunkoo Lee
- Department of Electronics Engineering, Sookmyung Women's University, Seoul, 04310, Republic of Korea
| | - Donghyo Hahm
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jaehoon Lim
- Department of Energy Science and Center for Artificial Atoms, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
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44
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Kang S, Han S, Kang Y. First-Principles Calculations of Luminescence Spectra of Real-Scale Quantum Dots. ACS MATERIALS AU 2021; 2:103-109. [PMID: 36855768 PMCID: PMC9888616 DOI: 10.1021/acsmaterialsau.1c00034] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
The luminescence line shape is an important feature of semiconductor quantum dots (QDs) and affects performance in various optical applications. Here, we report a first-principles method to predict the luminescence spectrum of thousands of atom QDs. In our approach, neural network potential calculations are combined with density functional theory calculations to describe exciton-phonon coupling (EPC). Using the calculated EPC, the luminescence spectrum is evaluated within the Franck-Condon approximation. Our approach results in the luminescence line shape for an InP/ZnSe core/shell QD (3406 atoms) that exhibits excellent agreement with the experiments. From a detailed analysis of EPC, we reveal that the coupling of both acoustic and optical phonons to an exciton are important in determining the spectral line shapes of core/shell QDs, which is in contrast with previous studies. On the basis of the present simulation results, we provide guidelines for designing high-performance core/shell QDs with ultrasharp emission spectra.
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Affiliation(s)
- Sungwoo Kang
- Department
of Materials Science and Engineering and Research Institute of Advanced
Materials, Seoul National University, Seoul 08826, Korea
| | - Seungwu Han
- Department
of Materials Science and Engineering and Research Institute of Advanced
Materials, Seoul National University, Seoul 08826, Korea,
| | - Youngho Kang
- Department
of Materials Science and Engineering, Incheon
National University, Incheon 22012, Korea,
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45
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Fedin I, Goryca M, Liu D, Tretiak S, Klimov VI, Crooker SA. Enhanced Emission from Bright Excitons in Asymmetrically Strained Colloidal CdSe/Cd xZn 1-xSe Quantum Dots. ACS NANO 2021; 15:14444-14452. [PMID: 34473467 DOI: 10.1021/acsnano.1c03864] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Colloidal CdSe quantum dots (QDs) designed with a high degree of asymmetric internal strain have recently been shown to host a number of desirable optical properties including subthermal room-temperature line widths, suppressed spectral diffusion, and high photoluminescence (PL) quantum yields. It remains an open question, however, whether they are well-suited for applications requiring emission of identical single photons. Here we measure the low-temperature PL dynamics and the polarization-resolved fluorescence line narrowing spectra from ensembles of these strained QDs. Our spectroscopy reveals the radiative recombination rates of bright and dark excitons, the relaxation rate between the two, and the energy spectra of the quantized acoustic phonons in the QDs that can contribute to relaxation processes. In comparison to conventional colloidal CdSe/ZnS core/shell QDs, we find that in asymmetrically strained CdSe QDs over six times more light is emitted directly by the bright exciton. These results are therefore encouraging for the prospects of chemically synthesized colloidal QDs as emitters of single indistinguishable photons.
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Affiliation(s)
- Igor Fedin
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Department of Chemistry and Biochemistry, University of Alabama, Tuscaloosa, Alabama 35487, United States
| | - Mateusz Goryca
- National High Magnetic Field Lab, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Dan Liu
- Theory Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Sergei Tretiak
- Theory Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Victor I Klimov
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Scott A Crooker
- National High Magnetic Field Lab, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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46
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Sayevich V, Robinson ZL, Kim Y, Kozlov OV, Jung H, Nakotte T, Park YS, Klimov VI. Highly versatile near-infrared emitters based on an atomically defined HgS interlayer embedded into a CdSe/CdS quantum dot. NATURE NANOTECHNOLOGY 2021; 16:673-679. [PMID: 33767383 DOI: 10.1038/s41565-021-00871-x] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Accepted: 01/29/2021] [Indexed: 06/12/2023]
Abstract
The availability of colloidal quantum dots with highly efficient, fast and 'non-blinking' near-infrared emission would benefit numerous applications, from advanced optical communication and quantum networks to biomedical diagnostics. Here, we report high-quality near-infrared emitters that are based on well known CdSe/CdS heterostructures. By incorporating an HgS interlayer at the quantum dot core/shell interface, we convert normally visible emitters into highly efficient near-infrared fluorophores. Employing thermodynamically controlled sequential deposition of metal and chalcogen ions, we achieve atomic-level precision in defining the thickness of the HgS interlayer (H). This manifests in 'quantized' jumps of the photoluminescence spectrum when H changes in discrete, atomic steps. The synthesized structures show highly efficient photoluminescence, tunable from 700 to 1,370 nm, and fast radiative rates of ~1/60 ns-1. The emission from individual CdSe/HgS/CdS colloidal quantum dots is virtually blinking free and exhibits nearly perfect single-photon purity. In addition, when incorporated into a light-emitting-diode architecture, these quantum dots demonstrate strong electroluminescence with a sub-bandgap turn-on voltage.
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Affiliation(s)
- Vladimir Sayevich
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Zachary L Robinson
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, USA
| | - Younghee Kim
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Oleg V Kozlov
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Heeyoung Jung
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Tom Nakotte
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
- Department of Chemical and Materials Engineering, New Mexico State University, Las Cruces, NM, USA
| | - Young-Shin Park
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA
- Center for High Technology Materials, University of New Mexico, Albuquerque, NM, USA
| | - Victor I Klimov
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, USA.
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47
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Controllable modulation of precursor reactivity using chemical additives for systematic synthesis of high-quality quantum dots. Nat Commun 2020; 11:5748. [PMID: 33184282 PMCID: PMC7665041 DOI: 10.1038/s41467-020-19573-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2020] [Accepted: 10/01/2020] [Indexed: 11/08/2022] Open
Abstract
The optical and electronic performance of quantum dots (QDs) are affected by their size distribution and structural quality. Although the synthetic strategies for size control are well established and widely applicable to various QD systems, the structural characteristics of QDs, such as morphology and crystallinity, are tuned mostly by trial and error in a material-specific manner. Here, we show that reaction temperature and precursor reactivity, the two parameters governing the surface-reaction kinetics during growth, govern the structural quality of QDs. For conventional precursors, their reactivity is determined by their chemical structure. Therefore, a variation of precursor reactivity requires the synthesis of different precursor molecules. As a result, existing precursor selections often have significant gaps in reactivity or require synthesis of precursor libraries comprising a large number of variants. We designed a sulfur precursor employing a boron-sulfur bond, which enables controllable modulation of their reactivity using commercially available Lewis bases. This precursor chemistry allows systematic optimization of the reaction temperature and precursor reactivity using a single precursor and grows high-quality QDs from cores of various sizes and materials. This work provides critical insights into the nanoparticle growth process and precursor designs, enabling the systematic preparation of high-quality QD of any sizes and materials. Synthesis of high crystal quality quantum dots (QDs) requires optimization of reaction temperature and precursor reactivity. Here, the authors report precursor chemistry that enables controllable modulation of precursor reactivity using chemical additives, and systematically grow high-quality QDs from cores of various sizes and materials.
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48
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Park J, Jayaraman A, Wang X, Zhao J, Han HS. Nanocrystal Precursor Incorporating Separated Reaction Mechanisms for Nucleation and Growth to Unleash the Potential of Heat-up Synthesis. ACS NANO 2020; 14:11579-11593. [PMID: 32790324 DOI: 10.1021/acsnano.0c04091] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A heat-up method for quantum dots (QDs) synthesis holds distinctive benefits for large-scale production with its simplicity, scalability, and high reproducibility. Its applications, however, have been limited because it inevitably yields a strong overlap between the nucleation and the growth stages. We addressed this long-standing problem by introducing a precursor having separated reaction paths for nucleation and growth. Unlike existing precursors, which employ a shared intermediate for both reactions, 9-mercapto-9-borabicyclo[3.3.1]nonane (BBN-SH) induces growth via surface-assisted conversion and drives nucleation via cluster formation in solution. Furthermore, this precursor chemistry embeds an efficient mechanism to suppress nucleation during growth. As such, BBN-SH allows heat-up-based growth of high-quality shells that are comparable to those created by the injection method. It is also notable that BBN-SH-based heat-up synthesis shows mitigated sensitivity to temperature fluctuation; therefore, it is highly suitable for industrial-scale reactions. We established a simple, scalable, and economic scheme for core/shell QDs by streamlining quantitative core synthesis and heat-up-based shell growth and showed that the scheme produces QDs of comparable quality to those produced by the traditional method. Here, we introduce a precursor that drives a distinctive mode of nanoparticle growth. We anticipate our study to inspire the design of other precursors and unleash the full potential of heat-up synthesis.
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Affiliation(s)
- Joonhyuck Park
- Department of Chemistry, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801, United States
| | - Arun Jayaraman
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801, United States
| | - Xudong Wang
- Department of Chemistry, University of Connecticut, 55 North Eagleville Road, Storrs, Connecticut 06269-3060, United States
| | - Jing Zhao
- Department of Chemistry, University of Connecticut, 55 North Eagleville Road, Storrs, Connecticut 06269-3060, United States
| | - Hee-Sun Han
- Department of Chemistry, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801, United States
- Carl R. Woese Institute for Genomic Biology, University of Illinois at Urbana-Champaign, 1206 W Gregory Drive, Urbana, Illinois 61801, United States
- Center for Biophysics and Quantitative Biology, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801, United States
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49
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Shu Y, Lin X, Qin H, Hu Z, Jin Y, Peng X. Quantum Dots for Display Applications. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.202004857] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Yufei Shu
- Center for Chemistry of High-Performance & Novel Materials Department of Chemistry Zhejiang University Hangzhou 310027 People's Republic of China
| | - Xing Lin
- Center for Chemistry of High-Performance & Novel Materials Department of Chemistry Zhejiang University Hangzhou 310027 People's Republic of China
| | - Haiyan Qin
- Center for Chemistry of High-Performance & Novel Materials Department of Chemistry Zhejiang University Hangzhou 310027 People's Republic of China
| | - Zhuang Hu
- Center for Chemistry of High-Performance & Novel Materials Department of Chemistry Zhejiang University Hangzhou 310027 People's Republic of China
| | - Yizheng Jin
- Center for Chemistry of High-Performance & Novel Materials Department of Chemistry Zhejiang University Hangzhou 310027 People's Republic of China
| | - Xiaogang Peng
- Center for Chemistry of High-Performance & Novel Materials Department of Chemistry Zhejiang University Hangzhou 310027 People's Republic of China
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50
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Shu Y, Lin X, Qin H, Hu Z, Jin Y, Peng X. Quantum Dots for Display Applications. Angew Chem Int Ed Engl 2020; 59:22312-22323. [PMID: 32421230 DOI: 10.1002/anie.202004857] [Citation(s) in RCA: 65] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2020] [Indexed: 12/19/2022]
Abstract
This article offers a materials-chemistry perspective for colloidal quantum dots (QDs) in the field of display, including QD-enhanced liquid-crystal-display (QD-LCD) and QD-based light-emitting-diodes (QLEDs) display. The rapid successes of QDs for display in the past five years are not accidental but have a deep root in both maturity of their synthetic chemistry and their unique chemical, optical, and optoelectronic properties. This article intends to discuss the natural match of QD emitters for display and chemical means to eventually bring about their full potential.
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Affiliation(s)
- Yufei Shu
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Xing Lin
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Haiyan Qin
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Zhuang Hu
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Yizheng Jin
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Xiaogang Peng
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310027, People's Republic of China
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