Thermoelectric cooling materials

In vitro and in vivo biocompatibility assessment of chalcogenide thermoelectrics as implants

The ability of thermoelectric materials to generate electricity in response to local temperature gradients makes them a potentially promising solution for the regulation of cellular functions and reconstruction of tissues. Biocompatibility of implants is a crucial attribute for the successful integration of thermoelectric techniques in biomedical applications. This work focuses on the in vitro and in vivo evaluation of biocompatibility for 12 typical chalcogenide thermoelectrics, which are composed of biocompatible elements. Ag2Se, SnSe, Bi2Se3, Bi2Te2.88Se0.12 and Bi2Te3, each with a released ion concentration lower than 10 ppm in extracts, exhibited favorable biocompatibility, including cell viability, adhesion, and hemocompatibility, as observed in initial in vitro assessments. Moreover, in vivo biocompatibility assessment, achieved by hematological and histopathological analyses in the rat subcutaneous model, further substantiated the biocompatibility of Ag2Se, Bi2Se3, and Bi2Te3, with each possessing superior thermoelectric performance at room temperature. This work offers robust evidence to promote Ag2Se, Bi2Se3, and Bi2Te3 as potential thermoelectric biomaterials, establishing a foundation for their future applications in biomedicine.

High Thermoelectric Performance in Rhombohedral GeSe-LiBiTe2

GeSe, an analogue of SnSe, shows promise in exhibiting exceptional thermoelectric performance in the Pnma phase. The constraints on its dopability, however, pose challenges in attaining optimal carrier concentrations and improving ZT values. This study demonstrates a crystal structure evolution strategy for achieving highly doped samples and promising ZTs in GeSe via LiBiTe2 alloying. A rhombohedral phase (R3m) can be stabilized in the GeSe-LiBiTe2 system, further evolving into a cubic (Fm3̅m) phase with a rising temperature. The band structures of GeSe-LiBiTe2 in the rhombohedral and cubic phases feature a similar multiple-valley energy-converged valence band of L and Σ bands. The observed high carrier concentration (∼1020 cm-3) reflects the effective convergence of these bands, enabling a high density-of-states effective mass and an enhanced power factor. Moreover, a very low lattice thermal conductivity of 0.6-0.5 W m-1 K-1 from 300 to 723 K is achieved in 0.9GeSe-0.1LiBiTe2, approaching the amorphous limit value. This remarkably low lattice thermal conductivity is related to phonon scattering from point defects, planar vacancies, and ferroelectric instability-induced low-energy Einstein oscillators. Finally, a maximum ZT value of 1.1 to 1.3 at 723 K is obtained, with a high average ZT value of over 0.8 (400-723 K) in 0.9GeSe-0.1LiBiTe2 samples. This study establishes a viable route for tailoring crystal structures to significantly improve the performance of GeSe-related compounds.

Tailoring thermoelectric performance ofn-type Bi2Te3through defect engineering and conduction band convergence

Bi2Te3, an archetypical tetradymite, is recognised as a thermoelectric (TE) material of potential application around room temperature. However, large energy gap (ΔEc) between the light and heavy conduction bands results in inferior TE performance in pristine bulkn-type Bi2Te3. Herein, we propose enhancement in TE performance of pristinen-type Bi2Te3through purposefully manipulating defect profile and conduction band convergence mechanism. Twon-type Bi2Te3samples, S1 and S2, are prepared by melting method under different synthesis condition. The structural as well as microstructural evidence of the samples are obtained through powder x-ray diffraction and transmission electron microscopic study. Optothermal Raman spectroscopy is utilized for comprehensive study of temperature dependent phonon vibrational modes and total thermal conductivity (κ) of the samples which further validates the experimentally measured thermal conductivity. The Seebeck coefficient value is significantly increased from 235 μVK-1(sample S1) to 310 μVK-1(sample S2). This is further justified by conduction band convergence, where ΔEcis reduced from 0.10 eV to 0.05 eV, respectively. To verify the band convergence, the double band Pisarenko model is employed. Large power factor (PF) of 2190 μWm-1K-2and lowerκvalue leading toZTof 0.56 at 300 K is gained in S2. The obtainedPFandZTvalue are among the highest values reported for pristinen-type bulk Bi2Te3. In addition, appreciable value of TE quality factor and compatibility factor (2.7 V-1) at room temperature are also achieved, indicating the usefulness of the material in TE module.

Modulating Thermal Conductivity via Targeted Phonon Excitation

Thermal conductivity is a critical material property in numerous applications, such as those related to thermoelectric devices and heat dissipation. Effectively modulating thermal conductivity has become a great concern in the field of heat conduction. Here, a quantum modulation strategy is proposed to modulate the thermal conductivity/heat flux by exciting targeted phonons. It shows that the thermal conductivity of graphene can be tailored in the range of 1559 W m-1 K-1 (decreased to 49%) to 4093 W m-1 K-1 (increased to 128%), compared with the intrinsic value of 3189 W m-1 K-1. The effects are also observed for graphene nanoribbons and bulk silicon. The results are obtained through both density functional theory calculations and molecular dynamics simulations. This novel modulation strategy may pave the way for quantum heat conduction.

Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals

Thermoelectrics has applications in power generation and refrigeration. Since only commercial Bi2Te3 has a low abundance Te, PbSe gets attention. This work enhances the near-room temperature performance of p-type PbSe through enhancing carrier mobility via lattice plainification. Composition controlled and Cu-doped p-type PbSe crystals are grown through physical vapor deposition. Results exhibit an enhanced carrier mobility ≈2578 cm2 V-1 s-1 for Pb0.996Cu0.0004Se. Microstructure characterization and density functional theory calculations verify the introduced Cu atoms filled Pb vacancies, realizing lattice plainification and enhancing the carrier mobility. The Pb0.996Cu0.0004Se sample achieves a power factor ≈42 µW cm-1 K-2 and a ZT ≈ 0.7 at 300 K. The average ZT of it reaches ≈0.9 (300-573 K), resulting in a single-leg power generation efficiency of 7.1% at temperature difference of 270 K, comparable to that of p-type commercial Bi2Te3. A 7-pairs device paired the p-type Pb0.996Cu0.0004Se with the n-type commercial Bi2Te3 shows a maximum cooling temperature difference ≈42 K with the hot side at 300 K, ≈65% of that of the commercial Bi2Te3 device. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and hope to inspire researchers on replacing commercial Bi2Te3.

Highly efficient semiconductor modules making controllable parallel microchannels for non-compressible hemorrhages

Nature makes the most beautiful solution to involuted problems. Among them, the parallel tubular structures are capable of transporting fluid quickly in plant trunks and leaf stems, which demonstrate an ingenious evolutionary design. This study develops a mini-thermoelectric semiconductor P-N module to create gradient and parallel channeled hydrogels. The modules decrease quickly the temperature of polymer solution from 20 °C to -20 °C within 5 min. In addition to the exceptional liquid absorption rate, the foams exhibited shape memory mechanics. Our mini device universally makes the inspired structure in such as chitosan, gelatin, alginate and polyvinyl alcohol. Non-compressible hemorrhages are the primary cause of death in emergency. The rapid liquid absorption leads to fast activation of coagulation, which provides an efficient strategy for hemostasis management. We demonstrated this by using our semiconductor modules on collagen-kaolin parallel channel foams with their high porosity (96.43%) and rapid expansion rate (2934%). They absorb liquid with 37.25 times of the own weight, show 46.5-fold liquid absorption speed and 24-fold of blood compared with random porous foams. These superior properties lead to strong hemostatic performance in vitro and in vivo.

Zinc Doping Induces Enhanced Thermoelectric Performance of Solvothermal SnTe

The creation of hierarchical nanostructures can effectively strengthen phonon scattering to reduce lattice thermal conductivity for improving thermoelectric properties in inorganic solids. Here, we use Zn doping to induce a remarkable reduction in the lattice thermal conductivity in SnTe, approaching the theoretical minimum limit. Microstructure analysis reveals that ZnTe nanoprecipitates can embed within SnTe grains beyond the solubility limit of Zn in the Zn alloyed SnTe. These nanoprecipitates result in a substantial decrease of the lattice thermal conductivity in SnTe, leading to an ultralow lattice thermal conductivity of 0.50 W m-1 K-1 at 773 K and a peak ZT of ~0.48 at 773 K, marking an approximately 45 % enhancement compared to pristine SnTe. This study underscores the effectiveness of incorporating ZnTe nanoprecipitates in boosting the thermoelectric performance of SnTe-based materials.

General strategy for developing thick-film micro-thermoelectric coolers from material fabrication to device integration

Micro-thermoelectric coolers are emerging as a promising solution for high-density cooling applications in confined spaces. Unlike thin-film micro-thermoelectric coolers with high cooling flux at the expense of cooling temperature difference due to very short thermoelectric legs, thick-film micro-thermoelectric coolers can achieve better comprehensive cooling performance. However, they still face significant challenges in both material preparation and device integration. Herein, we propose a design strategy which combines Bi2Te3-based thick film prepared by powder direct molding with micro-thermoelectric cooler integrated via phase-change batch transfer. Accurate thickness control and relatively high thermoelectric performance can be achieved for the thick film, and the high-density-integrated thick-film micro-thermoelectric cooler exhibits excellent performance with maximum cooling temperature difference of 40.6 K and maximum cooling flux of 56.5 W·cm-2 at room temperature. The micro-thermoelectric cooler also shows high temperature control accuracy (0.01 K) and reliability (over 30000 cooling cycles). Moreover, the device demonstrates remarkable capacity in power generation with normalized power density up to 214.0 μW · cm-2 · K-2. This study provides a general and scalable route for developing high-performance thick-film micro-thermoelectric cooler, benefiting widespread applications in thermal management of microsystems.

Cation Modulation in AgSbTe2 Realizes Carrier Optimization, Defect Engineering, and a 7% Single-Leg Thermoelectric Efficiency

AgSbTe2 plays a pivotal role in mid-temperature thermoelectric generators (TEGs). Leveraging the seminal advances in cation manipulation within AgSbTe2, this study demonstrates an enhanced TE power factor (PF = S2σ) of 1.5 mWm-1 K-2 and a peak zT of 1.5 at 583 K in an off-stoichiometric Ag1.04Sb0.96Te2 crystal. The introduction of Ge in place of Ag leads to an increased nH as evidenced by the detection of trace Ge4+ through XPS analysis. Further chemical state analysis reveals the simultaneous presence of Ag+, Sb3+, and Ge4+, elucidating the effect of cation modulations. TEM characterizations validate the presence of superlattice structure, and the linear defects discerned within the AgSbTe2 matrix. Consequently, the lattice thermal conductivity κL is substantially reduced in the Ag1.02Ge0.02Sb0.96Te2 crystal, yielding a peak zT of 1.77 at 623 K. This notable advancement is attributed to the counterbalance achieved between the enhanced PF and the reduced κL, facilitated by cation modulation. Additionally, a single-leg TE device incorporating Ag1.02Ge0.02Sb0.96Te2 demonstrates a conversion efficiency of 7% across a temperature gradient (ΔT) of 350 K. This study corroborates the efficacy of cation modulation through thermodynamic approaches and establishes a relationship between transport properties and the presence of defects.

Enhancing Thermoelectric Performance of n-Type Bi2Te2.7Se0.3 through Incorporation of Amorphous Si3N4 Nanoparticles

Bi2Te3-based thermoelectric (TE) materials are the state-of-the-art compounds for commercial applications near room temperature. Nevertheless, the application of the n-type Bi2Te2.7Se0.3 (BTS) is restricted by the comparatively low figure of merit (ZT) and intrinsic embrittlement. Here, we show that through dispersion of amorphous Si3N4 (a-Si3N4) nanoparticles both 14% increase in power factor (at 300 K) and 48% decrease in lattice thermal conductivity are simultaneously realized. The increased power factor comes from enhanced thermopower and reduced electrical resistivity while the reduced lattice thermal conductivity originates mainly from scattering of middle- and low-frequency phonons at the incorporated a-Si3N4 nanoparticles. As a result, a large ZTmax = 1.19 (at 373 K) and an average ZTave ∼ 1.12 (300-473 K) with better mechanical properties are achieved for the BTS/0.25 wt % Si3N4 sample. Present results demonstrate that the incorporation of a-Si3N4 is a promising way to improve TE performance.

Bismuth Telluride Supported Sub-1 nm Polyoxometalate Cluster for High-Efficiency Thermoelectric Energy Conversion

Size plays a crucial role in chemistry and material science. Subnanometer polyoxometalate (POM) clusters have gained attention in various fields, but their use in thermoelectrics is still limited. To address this issue, we propose the POM clusters as an effective second phase to enhance the thermoelectric properties of Bi0.4Sb1.6Te3. Thanks to their subnanometer size, POM clusters improve electrical transport behavior through the superposition of atomic orbitals and the interfacial scattering effect. Furthermore, their ultrasmall size strongly reduces thermal conductivity. Consequently, the introduction of a mere 0.1 mol % of POM into the Bi0.4Sb1.6Te3 matrix realizes a state-of-the-art zT value of 1.46 at 348 K, a 45% enhancement over Bi0.4Sb1.6Te3 (1.01), along with a maximum thermoelectric-conversion efficiency of the integrated module of 6.0%. The enhancement of carrier mobility and the suppression of thermal conduction achieved by introducing the subnanometer clusters hold promise for various applications, such as electronic devices and thermal management.

A Recipe for a Great Meal: A Benchtop Route from Elemental Se to Superior Thermoelectric β-Ag2Se

The low-temperature modification of β-Ag2Se has proven to be useful as a near-room-temperature thermoelectric material. Over the past years, research has been devoted to interstitial, vacancy, and substitutional doping into the parent β-Ag2Se structure, aiming at tuning the material's charge and heat transport properties to enhance thermoelectric performance. The transformation of β-Ag2Se into α-Ag2Se at ∼134 °C and the low solubility of dopants are the main obstacles for the doping approach. Herein, we report a facile, safe, scalable, and cost-effective benchtop approach to successfully produce metal-doped β-Ag2Se. The doped materials display a remarkable enhancement of thermoelectric performance with a record-high peak zT of 1.30 at 120 °C and an average zT of ∼1.15 in the 25-120 °C range for 0.2 at. % Zn-doped Ag2Se. The enhancement in zT is attributed to point defects created by Zn doping into Ag vacancies/interstitials, which enhances the scattering of phonons and tunes the charge carrier properties, leading to the significant suppression of thermal conductivity. The simplicity of the synthetic method developed herein and the high performance of the final products provide an avenue to produce high-quality Ag2Se-based thermoelectric materials.

Personal Thermal Management by Radiative Cooling and Heating

Maintaining thermal comfort within the human body is crucial for optimal health and overall well-being. By merely broadening the set-point of indoor temperatures, we could significantly slash energy usage in building heating, ventilation, and air-conditioning systems. In recent years, there has been a surge in advancements in personal thermal management (PTM), aiming to regulate heat and moisture transfer within our immediate surroundings, clothing, and skin. The advent of PTM is driven by the rapid development in nano/micro-materials and energy science and engineering. An emerging research area in PTM is personal radiative thermal management (PRTM), which demonstrates immense potential with its high radiative heat transfer efficiency and ease of regulation. However, it is less taken into account in traditional textiles, and there currently lies a gap in our knowledge and understanding of PRTM. In this review, we aim to present a thorough analysis of advanced textile materials and technologies for PRTM. Specifically, we will introduce and discuss the underlying radiation heat transfer mechanisms, fabrication methods of textiles, and various indoor/outdoor applications in light of their different regulation functionalities, including radiative cooling, radiative heating, and dual-mode thermoregulation. Furthermore, we will shine a light on the current hurdles, propose potential strategies, and delve into future technology trends for PRTM with an emphasis on functionalities and applications.

Demonstration and imaging of cryogenic magneto-thermoelectric cooling in a van der Waals semimetal

Attaining viable thermoelectric cooling at cryogenic temperatures is of considerable fundamental and technological interest for electronics and quantum materials applications. In-device temperature control can provide more efficient and precise thermal environment management compared with conventional global cooling. The application of a current and perpendicular magnetic field gives rise to cooling by generating electron-hole pairs on one side of the sample and to heating due to their recombination on the opposite side, which is known as the Ettingshausen effect. Here we develop nanoscale cryogenic imaging of the magneto-thermoelectric effect and demonstrate absolute cooling and an Ettingshausen effect in exfoliated WTe2 Weyl semimetal flakes at liquid He temperatures. In contrast to bulk materials, the cooling is non-monotonic with respect to the magnetic field and device size. Our model of magneto-thermoelectricity in mesoscopic semimetal devices shows that the cooling efficiency and the induced temperature profiles are governed by the interplay between sample geometry, electron-hole recombination length, magnetic field, and flake and substrate heat conductivities. The observations open the way for the direct integration of microscopic thermoelectric cooling and for temperature landscape engineering in van der Waals devices.

Abnormal thermally-stimulated dynamic organic phosphorescence

Dynamic luminescence behavior by external stimuli, such as light, thermal field, electricity, mechanical force, etc., endows the materials with great promise in optoelectronic applications. Upon thermal stimulus, the emission is inevitably quenched due to intensive non-radiative transition, especially for phosphorescence at high temperature. Herein, we report an abnormal thermally-stimulated phosphorescence behavior in a series of organic phosphors. As temperature changes from 198 to 343 K, the phosphorescence at around 479 nm gradually enhances for the model phosphor, of which the phosphorescent colors are tuned from yellow to cyan-blue. Furthermore, we demonstrate the potential applications of such dynamic emission for smart dyes and colorful afterglow displays. Our results would initiate the exploration of dynamic high-temperature phosphorescence for applications in smart optoelectronics. This finding not only contributes to an in-depth understanding of the thermally-stimulated phosphorescence, but also paves the way toward the development of smart materials for applications in optoelectronics.

On-Chip Micro Temperature Controllers Based on Freestanding Thermoelectric Nano Films for Low-Power Electronics

Multidimensional integration and multifunctional component assembly have been greatly explored in recent years to extend Moore's Law of modern microelectronics. However, this inevitably exacerbates the inhomogeneity of temperature distribution in microsystems, making precise temperature control for electronic components extremely challenging. Herein, we report an on-chip micro temperature controller including a pair of thermoelectric legs with a total area of 50 × 50 μm2, which are fabricated from dense and flat freestanding Bi2Te3-based thermoelectric nano films deposited on a newly developed nano graphene oxide membrane substrate. Its tunable equivalent thermal resistance is controlled by electrical currents to achieve energy-efficient temperature control for low-power electronics. A large cooling temperature difference of 44.5 K at 380 K is achieved with a power consumption of only 445 μW, resulting in an ultrahigh temperature control capability over 100 K mW-1. Moreover, an ultra-fast cooling rate exceeding 2000 K s-1 and excellent reliability of up to 1 million cycles are observed. Our proposed on-chip temperature controller is expected to enable further miniaturization and multifunctional integration on a single chip for microelectronics.

Modulating Thermoelectric Properties of the MoSe2/WSe2 Superlattice Heterostructure by Twist Angles

In the current era of limited resources, the matter of energy conversion holds significant importance. Thermoelectric materials possess the ability to transform thermal energy into electric power. Achieving an impressive thermoelectric figure of merit (ZT) necessitates the presence of a high power factor alongside low thermal conductivity. Stimulated by recent experimental reports on the in-plane lateral MoSe2/WSe2 heterostructure in the application thermoelectric device [Zhang Y. et al., Simultaneous electrical and thermal rectification in a monolayer lateral heterojunction. Science 2022, 378, 169], in this study, the method of twisting angle is used to modulate the energy bands of van der Waals MoSe2/WSe2 superlattice heterostructures to optimize the carrier concentration, band gap, electric conductance, thermal conductivity, and ZT of the heterostructure. The 21.79° twisted heterostructures among different twisting-angle heterostructures benefit from both the high power factor and low thermal conductivity, ultimately leading to significantly improved ZT compared to the untwisted counterpart.

Intensified Phonon Scattering in ZrCoBi Half-Heusler by Noble Metals Doping

ZrCoBi-based half-Heuslers have great potential in power generation applications because of their high thermoelectric performance in both p- and n-type constituents. In this work, n-type ZrCoBi with improved thermoelectric performance has been realized by intensifying the phonon scattering via noble metal doping, e.g., Pd and Pt doping. The carrier concentration was effectively tuned to the optimal range, and the lattice thermal conductivity was greatly suppressed via the strong strain field and mass fluctuation scattering brought about by the large difference in atomic size and mass between Pd or Pt and Co. Consequently, the state-of-art figure of merit zT ∼1 was achieved in Pd- or Pt-doped ZrCoBi. In addition, the average zTavg values for ZrCo0.95Pd0.05Bi and ZrCo0.925Pt0.075Bi have reached 0.58 and 0.51, respectively, which are higher than those of most of the reported n-type ZrCoBi-based and ZrCoSb-based half-Heusler alloys.

First-Principles Investigation of Simultaneous Thermoelectric Power Generation and Active Cooling in a Bifunctional Semimetal ZrSeTe Janus Structure

Traditional thermoelectric materials often face a trade-off between efficient power generation (high ZT) and cooling performance. Here, we explore the potential of achieving simultaneous thermoelectric power generation and cooling capability in the recently fabricated bulk ZrSeTe Janus structure using first-principles density functional theory (DFT). The layered ZrSeTe Janus structure exhibits a semimetal character with anisotropic transport properties along the in-plane and out-of-plane directions. Our DFT calculations, including the explicit calculation of relaxation time, reveal a maximum ZT of ~0.065 in the out-of-plane direction at 300 K which is one order of magnitude larger than that in the in-plane direction (ZT~0.006). Furthermore, the thermoelectric cooling performance is also investigated. The in-plane direction shows a cooling performance of 13 W/m·K and a coefficient of performance (COPmax) of ~90 with a temperature difference (ΔT) of 30 K, while the out-of-plane direction has a cooling performance of 2.5 W/m·K and COPmax of ~2.5. Thus, the out-of-plane current from the thermoelectric power generation can be utilized as an in-plane current source for active heat pumping. Consequently, we propose that the semimetal ZrSeTe Janus structure can display bifunctional thermoelectric properties for simultaneous thermoelectric power generation and active cooling.

High-Throughput Strategies in the Discovery of Thermoelectric Materials

Searching for new high-performance thermoelectric (TE) materials that are economical and environmentally friendly is an urgent task for TE society, but the advancements are greatly limited by the time-consuming and high cost of the traditional trial-and-error method. The significant progress achieved in the computing hardware, efficient computing methods, advance artificial intelligence algorithms, and rapidly growing material data have brought a paradigm shift in the investigation of TE materials. Many electrical and thermal performance descriptors are proposed and efficient high-throughput (HTP) calculation methods are developed with the purpose to quickly screen new potential TE materials from the material databases. Some HTP experiment methods are also developed which can increase the density of information obtained in a single experiment with less time and lower cost. In addition, machine learning (ML) methods are also introduced in thermoelectrics. In this review, the HTP strategies in the discovery of TE materials are systematically summarized. The applications of performance descriptor, HTP calculation, HTP experiment, and ML in the discovery of new TE materials are reviewed. In addition, the challenges and possible directions in future research are also discussed.

A broad-spectrum gas sensor based on correlated two-dimensional electron gas

Designing a broad-spectrum gas sensor capable of identifying gas components in complex environments, such as mixed atmospheres or extreme temperatures, is a significant concern for various technologies, including energy, geological science, and planetary exploration. The main challenge lies in finding materials that exhibit high chemical stability and wide working temperature range. Materials that amplify signals through non-chemical methods could open up new sensing avenues. Here, we present the discovery of a broad-spectrum gas sensor utilizing correlated two-dimensional electron gas at a delta-doped LaAlO3/SrTiO3 interface with LaFeO3. Our study reveals that a back-gating on this two-dimensional electron gas can induce a non-volatile metal to insulator transition, which consequently can activate the two-dimensional electron gas to sensitively and quantitatively probe very broad gas species, no matter whether they are polar, non-polar, or inert gases. Different gas species cause resistance change at their sublimation or boiling temperature and a well-defined phase transition angle can quantitatively determine their partial pressures. Such unique correlated two-dimensional electron gas sensor is not affected by gas mixtures and maintains a wide operating temperature range. Furthermore, its readout is a simple measurement of electric resistance change, thus providing a very low-cost and high-efficient broad-spectrum sensing technique.

Precise temperature control and rapid heating/cooling of infrared spectroscopy samples with a two-stage thermoelectric device

The design and performance of an apparatus for heating and cooling samples during variable temperature infrared spectroscopy studies are described. The apparatus incorporates two thermoelectric device modules in a stacked configuration. The cascaded devices are powered in parallel and contained within a metal enclosure that maintains their alignment and applies clamping pressure between them to maximize thermal conductivity. By using this apparatus, sample temperatures can be increased or decreased at 2 °C s-1 rates and isothermal temperatures can be maintained precisely (±0.1 °C). The rapid heating and cooling capabilities of the apparatus facilitate programmed temperature step heating/cooling profiles with isothermal infrared spectrum measurements at pre-selected temperatures. Using linear heating and cooling temperature ramps, subtle temperature-dependent poly(styrene) infrared spectrum changes are elucidated and correlated with sample temperature. Results obtained by using a temperature step sample heating profile are compared with those obtained by using linear temperature ramp heating and cooling to characterize silica gel dehydration and re-hydration processes. By comparing infrared spectra acquired at different temperatures while heating and cooling the sample, silica gel spectrum changes associated with water desorption/adsorption and the thermal expansion/contraction of the Si-O-Si network are differentiated.

Suppressing Ag2Te nanoprecipitates for enhancing thermoelectric efficiency of AgSbTe2

Thermoelectrics are a class of materials that provide interconversion between heat and electricity, with desirable traits such as low thermal conductivity and low electrical resistivity. AgSbTe2 has emerged as one of the leading materials in recent years due to its ultra-low thermal conductivity. However, one major hindrance in undoped AgSbTe2 is its high electrical resistivity and low Seebeck coefficient due to the presence of Ag2Te nanoprecipitates. In this work, we leverage on the combination of an off-stoichiometric composition and a non-equilibrium process to simultaneously enhance the properties of AgSbTe2 and its thermoelectric device performance. Microscopically, the Ag2Te-deficient starting composition combined with a non-equilibrium thermal process suppresses the Ag2Te nanoprecipitates in the material. In addition, it is evident from the density functional theory (DFT) electronic structure that Ag2Te deficiency results in a smaller lattice and higher density-of-states near the Fermi level, which simultaneously lower the electrical resistivity and increase the Seebeck coefficient. As a result, zT as high as 1.7 was achieved at 573 K. Additionally, when combined with a high room temperature zT of 0.75, a power conversion efficiency of 7.3% was achieved at a ΔT of 290 K. Crucially, the strategy in this work can inspire application in other ABX2 material systems to achieve improved thermoelectric performances.

Effect of Inevitable Heat Leap on the Conversion Efficiency of Thermoelectric Generators

Discrepancies between experimental and theoretical results in the study of thermoelectric generators (TEGs) have been a major long-standing problem in thermoelectric technology. In this Letter, we report that, besides interfacial resistance, the inevitable heat leap caused by the Peltier effect is the main factor affecting the conversion efficiency of TEGs. In fact, the heat leap is proven to have an impact of approximately 10% on the conversion efficiency of common TEGs. In addition, we enhance the formula for maximum conversion efficiency with heat leap from the classical expression to allow for the prediction of the performance of advanced materials in TEGs. For the first time, the experimental data from conversion efficiency corresponds exactly to that obtained theoretically by considering both the heat leap and interfacial resistivity.

Effects of quantum size on the thermoelectric properties of bismuth

First principles and the Boltzmann transport equation have been combined to investigate the effects of quantum size L/λ, the ratio of quantum confinement length L to thermal de Broglie wavelength λ, on the thermoelectric properties of 2D β-bismuth. It is revealed that the thermoelectric properties of 2D β-bismuth are highly influenced by quantum size, especially when the L/λ is less than 0.1. Specifically, the Seebeck coefficients of both electrons and holes decrease as the L/λ ratio increases, while the electrical and thermal conductivity show the opposite trend. The results also show that 2D bismuth with three or more layers has semimetal properties, with the first observation of a semiconductor-semimetal transition in 2D bismuth. Moreover, the electron affinity, ionization energy, and work function of 2D β-bismuth do not exhibit a significant variation or trend with quantum size effects. The detailed electronic structures provide a fundamental understanding of the thermoelectric properties of bismuth, and the obtained results may provide a deep understanding of the relationship between the quantum size and the thermoelectric properties of 2D β-bismuth.

Revealing the Chemical Instability of Mg3Sb2-xBix-Based Thermoelectric Materials

n-Type Mg3Sb2-xBix alloys have been regarded as promising thermoelectric materials due to their excellent performance and low cost. For practical applications, the thermoelectric performance is not the only factor that should be taken into consideration. In addition, the chemical and thermal stabilities of the thermoelectric material are of equal importance for the module design. Previous studies reported that the Mg3Sb2-xBix alloys were unstable in an ambient environment. In this work, we found that Mg3Sb2-xBix alloys reacted with H2O and O2 at room temperature and formed amorphous Mg(OH)2/MgO and crystalline Bi/Sb. The substantial loss of Mg resulted in a significant deterioration in thermoelectric properties, accompanied by the transition from n-type to p-type. With the increase in Bi content, the chemical stability decreased due to the higher formation energy of Mg3Bi2. A chemically stable Mg3Bi2 sample was achieved by coating it with polydimethylsiloxane to isolate H2O and O2 in the air.

Advances in thermoelectric AgBiSe2: Properties, strategies, and future challenges

Thermoelectric materials are attracting considerable attention to alleviate the global energy crisis by enabling the direct conversion of heat into electricity. As a class of I-V-VI2 semiconductors, AgBiSe2 is expected to be the potential thermoelectric material to replace conventional PbTe-based compounds due to its non-toxic and abundant nature of its constituent elements. This review article summarizes the fundamental properties of AgBiSe2, thermoelectric properties, the effect of different dopants on its transport properties and entropy engineering for cubic phase stabilization with the detailed description of related techniques used to analyze the properties of AgBiSe2. The current thermoelectric figure-of-merit and approaches to further improve performance and operational stability are also discussed.

N-Type Thermoelectric AgBiPbS3 with Nanoprecipitates and Low Thermal Conductivity

Thermoelectric sulfide materials are of particular interest due to the earth-abundant and cost-effective nature of sulfur. Here, we report a new n-type degenerate semiconductor sulfide, AgBiPbS3, which adopts a Fm3̅m structure with a narrow band gap of ∼0.32 eV. Despite the homogeneous distribution of elements at the scale of micrometer, Ag2S nanoprecipitates with dimensions of several nanometers were detected throughout the matrix. AgBiPbS3 exhibits a low room-temperature lattice thermal conductivity of 0.88 W m-1 K-1, owing to the intrinsic low lattice thermal conductivity of Ag2S and the effective scattering of phonons at nanoprecipitate boundaries. Moreover, compared to AgBiS2, AgBiPbS3 demonstrates a significantly improved weighted mobility of >16 cm2 V-1 s-1 at 300 K, leading to an enhanced PF of 1.6 μW cm-1 K-2 at 300 K. The superior electrical transport in AgBiPbS3 can be attributed to the high valley degeneracy of the L point (the conduction band minimum), which is contributed by the Pb s and Pb p orbitals. Further, Ga doping is found to be effective in modulating the Fermi levels of AgBiPbS3, leading to further enhancement of PF with a PFave of 2.7 μW cm-1 K-2 in the temperature range of 300-823 K. Consequently, a relatively high ZTave of 0.22 and a peak ZT of ∼0.4 at 823 K have been achieved in 3% Ga-doped AgBiPbS3, highlighting the potential of AgBiPbS3 as an n-type thermoelectric sulfide.

Material descriptors for thermoelectric performance of narrow-gap semiconductors and semimetals

Thermoelectric (TE) cooling is an environment-friendly alternative to vapor compression cooling. New TE materials with high coefficients of performance are needed to further advance this technology. Narrow-gap semiconductors and semimetals have garnered interest for Peltier cooling, yet large-scale computational searches often rely on material descriptors that do not account for bipolar conduction effects. In this work, we derive three material descriptors to assess the TE performances of narrow-gap semiconductors and semimetals - band gap, n- and p-type TE quality factors, and the asymmetry in transport between the majority and minority carriers. We show that a large asymmetry is critical to achieving high TE performance through minimization of bipolar conduction effects. We validate the predictive power of the descriptors by correctly identifying Mg3Bi2 and Bi2Te3 as high-performing room-temperature TE materials. By applying these descriptors to a broad set of 650 Zintl phases, we identify three candidate room-temperature TE materials, namely SrSb2, Zn3As2, and NaCdSb. The proposed material descriptors will enable fast, targeted searches of narrow-gap semiconductors and semimetals for low-temperature TEs. We further propose a refined TE quality factor, Bbp, which is a composite descriptor of the peak zT in materials exhibiting significant bipolar conduction; Bbp can be used to compare the TE performances of narrow-gap semiconductors.

Direct Conversion of Phase-Transition Entropy into Electrochemical Thermopower and the Peltier Effect

A thermocell generates thermopower from a temperature difference (ΔT) between two electrodes. The converse process of thermocells is an electrochemical Peltier effect, which creates a ΔT on the electrodes by applying an external current. The Seebeck coefficient (Se ) of the electrochemical system is proportional to the entropy change of the redox reaction; therefore, a redox system having a significant entropy change is expected to increase the Se . In this study, a thermoresponsive polymer having a redox-active moiety, poly(N-isopropyl acrylamide-co-N-(2-acrylamide ethyl)-N'-n-propylviologen) (PNV), is used as the redox species of a thermocell. PNV2+ dication undergoes the coil-globule phase transition upon the reduction to PNV+ cation radical, and a large entropy change is introduced because water molecules are freed from the polymer chains. The Se of PNV thermocell drastically increased to +2.1 mV K-1 at the lower critical solution temperature (LCST) of PNV. The entropy change calculated from the increment of Se agrees with the value evaluated by differential scanning calorimetry. Moreover, the electrochemical Peltier effect is observed when the device temperature is increased above the LCST. This study shows that the large entropy change associated with the coil-globule phase transition can be used in electrochemical thermal management and refrigeration technologies.

Selective Scatterings of Phonons and Electrons in Defective Half-Heusler Nb1- δ CoSb for the Figure of Merit zT > 1

The recently developed defective 19-electron half-Heusler (HH) compounds, represented by Nb1- δ CoSb, possess massive intrinsic vacancies at the cation site and thus intrinsically low lattice thermal conductivity that is desirable for thermoelectric (TE) applications. Yet the TE performance of defective HHs with a maximum figure of merit (zT) <1.0 is still inferior to that of the conventional 18-electron ones. Here, a peak zT exceeding unity is obtained at 1123 K for both Nb0.7 Ta0.13 CoSb and Nb0.6 Ta0.23 CoSb, a benchmark value for defective 19-electron HHs. The improved zT results from the achievement of selective scatterings of phonons and electrons in defective Nb0.83 CoSb, using lanthanide contraction as a design factor to select alloying elements that can strongly impede the phonon propagation but weakly disturb the periodic potential. Despite the massive vacancies induced strong point defect scattering of phonons in Nb0.83 CoSb, Ta alloying is still found effective in suppressing lattice thermal conductivity while maintaining the carrier mobility almost unchanged. In comparison, V alloying significantly deteriorates the carrier transport and thus the TE performance. These results enlarge the category of high-performance HH TE materials beyond the conventional 18-electron ones and highlight the effectiveness of selective scatterings of phonons and electrons in developing TE materials even with massive vacancies.

Self-triggered thermoelectric nanoheterojunction for cancer catalytic and immunotherapy

The exogenous excitation requirement and electron-hole recombination are the key elements limiting the application of catalytic therapies. Here a tumor microenvironment (TME)-specific self-triggered thermoelectric nanoheterojunction (Bi0.5Sb1.5Te3/CaO2 nanosheets, BST/CaO2 NSs) with self-built-in electric field facilitated charge separation is fabricated. Upon exposure to TME, the CaO2 coating undergoes rapid hydrolysis, releasing Ca2+, H2O2, and heat. The resulting temperature difference on the BST NSs initiates a thermoelectric effect, driving reactive oxygen species production. H2O2 not only serves as a substrate supplement for ROS generation but also dysregulates Ca2+ channels, preventing Ca2+ efflux. This further exacerbates calcium overload-mediated therapy. Additionally, Ca2+ promotes DC maturation and tumor antigen presentation, facilitating immunotherapy. It is worth noting that the CaO2 NP coating hydrolyzes very slowly in normal cells, releasing Ca2+ and O2 without causing any adverse effects. Tumor-specific self-triggered thermoelectric nanoheterojunction combined catalytic therapy, ion interference therapy, and immunotherapy exhibit excellent antitumor performance in female mice.

Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg3(Bi,Sb)2

The low-temperature thermoelectric performance of Bi-rich n-type Mg3(Bi,Sb)2 was limited by the electron transport scattering at grain boundaries, while removing grain boundaries and bulk crystal growth of Mg-based Zintl phases are challenging due to the volatilities of elemental reactants and their severe corrosions to crucibles at elevated temperatures. Herein, for the first time, we reported a facile growth of coarse-grained Mg3Bi2-xSbx crystals with an average grain size of ~800 μm, leading to a high carrier mobility of 210 cm2 · V-1 · s-1 and a high z of 2.9 × 10-3 K-1 at 300 K. A [Formula: see text]T of 68 K at Th of 300 K, and a power generation efficiency of 5.8% below 450 K have been demonstrated for Mg3Bi1.5Sb0.5- and Mg3Bi1.25Sb0.75-based thermoelectric modules, respectively, which represent the cutting-edge advances in the near-room temperature thermoelectrics. In addition, the developed grain growth approach can be potentially extended to broad Zintl phases and other Mg-based alloys and compounds.

Cellulose-Based Ionic Conductor: An Emerging Material toward Sustainable Devices

Ionic conductors (ICs) find widespread applications across different fields, such as smart electronic, ionotronic, sensor, biomedical, and energy harvesting/storage devices, and largely determine the function and performance of these devices. In the pursuit of developing ICs required for better performing and sustainable devices, cellulose appears as an attractive and promising building block due to its high abundance, renewability, striking mechanical strength, and other functional features. In this review, we provide a comprehensive summary regarding ICs fabricated from cellulose and cellulose-derived materials in terms of fundamental structural features of cellulose, the materials design and fabrication techniques for engineering, main properties and characterization, and diverse applications. Next, the potential of cellulose-based ICs to relieve the increasing concern about electronic waste within the frame of circularity and environmental sustainability and the future directions to be explored for advancing this field are discussed. Overall, we hope this review can provide a comprehensive summary and unique perspectives on the design and application of advanced cellulose-based ICs and thereby encourage the utilization of cellulosic materials toward sustainable devices.

Study on Enhancing the Thermoelectric Stability of the β-Cu2Se Phase by Mn Doping

Cu₂Se is a promising thermoelectric (TE) material due to its low cost, Earth abundance, and high thermoelectric properties. However, the biggest problem of Cu₂Se is its unstable chemical properties. In particular, under the action of an electric field or gradient temperature field, the chemical potential of copper ions inside the material increases. When the external field is strong enough, the chemical potential of copper ions at the negative end of the material reaches the chemical potential of elemental copper. Under these conditions, copper ions must precipitate out, causing Cu₂Se to be unstable, and making it unsuitable for use in applications. In this study, we prepared Cu_2-xMn_xSe (x = 0, 0.02, 0.04 and 0.06) series bulk materials by vacuum melting-annealing and sintered by spark plasma sintering (SPS). We investigated the effects of Mn doping on the composition, microstructure, band structure, scattering mechanism, thermoelectric properties, and stability of Cu₂Se. The results show that Mn doping can adjust the carrier concentration, promote the stabilization of the β-phase structure and improve the electrical properties of Cu₂Se. When x = 0.06, the highest power factor (PF) value of Cu_1.94Mn_0.06Se at 873 K was 1.62 mW m^-1 K^-2. The results of carrier scattering mechanism analysis based on the conductivity ratio method show that the sample doped with Mn and pure Cu₂Se had the characteristics of ionization impurity scattering, and the scattering factor was 3/2. However, the deterioration in thermal conductivity was large, and a superior zT value needs to be obtained. The cyclic test results of high-temperature thermoelectric properties show that Mn doping can hinder Cu⁺ migration and improve its thermoelectric stability, which preliminarily verifies the feasibility of using the stable zirconia mechanism to improve the thermoelectric stability of Cu₂Se.

Cu1.5SeyTe1-y (y = 0.2-0.7): A Series of Narrow Band Gap Semiconductors with Low Thermal Conductivity at Ambient Temperature

Coinage metal chalcogenides offer ideal prerequisites for high thermoelectric performance and sensor applications, with their usually low lattice thermal and high electrical conductivity, as well as small band gaps. In the solid solution Cu_1.5Se_yTe_1-y we synthesized phase pure materials with y = 0.2-0.7 and characterized them concerning selected physical properties. X-ray crystal structure determination was performed for two representatives of the solid solution, Cu_1.5Se_0.3Te_0.7 and Cu_1.5Se_0.5Te_0.5. The entire series crystallizes cubically, in space group Pm3̅n. No structural changes are observed between room temperature and the synthesis temperature of 723 K. The conductivity measurements and Seebeck coefficients of Cu_1.5Se_0.3Te_0.7 and Cu_1.5Se_0.5Te_0.5 indicate that the two representatives are narrow band gap semiconductors (E_g 0.06-0.08 eV). Both compounds show positive Seebeck coefficients and reasonably low thermal conductivities at moderate temperatures. Cu_1.5Se_0.5Te_0.5 is characterized by a bulk modulus of 40.9 GPa.

Attaining High Figure of Merit in the N-Type Bi2Te2.7Se0.3-Ag2Te Composite System via Comprehensive Regulation of Its Thermoelectric Properties

n-Type Bi₂Te_2.7Se_0.3 (BTS) is the state-of-the-art thermoelectric material near room temperature. However, the figure of merit ZT of commercial BTS ingots is still limited and further improvement is imperative for their wide applications. Here, the results show that through dispersion of the Ag₂Te nanophase in BTS, one can not only elevate its power factor (PF) by as high as 14% (at 300 K) but also reduce its thermal conductivity κ_tot to as small as ∼29% (at 300 K). Experimental evidences show that the improved PF comes from both increased electron mobility via inhibited Te vacancies and enhanced thermopower due to energy filtering effect, while the reduction of κ_tot originates from the drop of both electronic thermal conductivity largely owing to the reduced number of vacancy V_Te^·· and intensified phonon scattering chiefly from the dispersed Ag₂Te nanophase. Consequently, the largest ZT_max = 1.31 (at 350 K) and average ZT_ave = 1.16 (300-500 K) are achieved for the Bi₂Te_2.7Se_0.3-0.3 wt % Ag₂Te composite sample, leading to a projected conversion efficiency η = 8.3% (300-500 K). The present results demonstrate that incorporation of nanophase Ag₂Te is an effective approach to boosting the thermoelectric performance of BTS.

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Mg₃ (Sb,Bi)₂ is a potential nearly-room temperature thermoelectric compound composed of earth-abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (V_Mg ) in Mg₃ (Sb,Bi)₂ . This study proposes an approach to mitigating the negative scattering effect of V_Mg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and C_s -corrected scanning transmission electron microscopy analyses indicated that the V_Mg tends to coalesce due to the introduced Bi vacancies (V_Bi ). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic V_Mg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at ∆T = 473 K are achieved in the optimized composition of Mg₃ (Sb,Bi)₂ by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg₃ (Sb,Bi)₂ as an emerging thermoelectric material.

Lattice plainification advances highly effective SnSe crystalline thermoelectrics

Thermoelectric technology has been widely used for key areas, including waste-heat recovery and solid-state cooling. We discovered tin selenide (SnSe) crystals with potential power generation and Peltier cooling performance. The extensive off-stoichiometric defects have a larger impact on the transport properties of SnSe, which motivated us to develop a lattice plainification strategy for defects engineering. We demonstrated that Cu can fill Sn vacancies to weaken defects scattering and boost carrier mobility, facilitating a power factor exceeding ~100 microwatts per centimeter per square kelvin and a dimensionless figure of merit (ZT) of ~1.5 at 300 kelvin, with an average ZT of ~2.2 at 300 to 773 kelvin. We further realized a single-leg efficiency of ~12.2% under a temperature difference (ΔT) of ~300 kelvin and a seven-pair Peltier cooling ΔT_max of ~61.2 kelvin at ambient temperature. Our observations are important for practical applications of SnSe crystals in power generation as well as electronic cooling.

Flexible Active Peltier Coolers Based on Interconnected Magnetic Nanowire Networks

Thermoelectric energy conversion based on flexible materials has great potential for applications in the fields of low-power heat harvesting and solid-state cooling. Here, we show that three-dimensional networks of interconnected ferromagnetic metal nanowires embedded in a polymer film are effective flexible materials as active Peltier coolers. Thermocouples based on Co-Fe nanowires exhibit much higher power factors and thermal conductivities near room temperature than other existing flexible thermoelectric systems, with a power factor for Co-Fe nanowire-based thermocouples of about 4.7 mW/K2m at room temperature. The effective thermal conductance of our device can be strongly and rapidly increased by active Peltier-induced heat flow, especially for small temperature differences. Our investigation represents a significant advance in the fabrication of lightweight flexible thermoelectric devices, and it offers great potential for the dynamic thermal management of hot spots on complex surfaces.

Proximal Active Optical Sensing Operational Improvement for Research Using the CropCircle ACS-470, Implications for Measurement of Normalized Difference Vegetation Index (NDVI)

Active radiometric reflectance is useful to determine plant characteristics in field conditions. However, the physics of silicone diode-based sensing are temperature sensitive, where a change in temperature affects photoconductive resistance. High-throughput plant phenotyping (HTPP) is a modern approach using sensors often mounted to proximal based platforms for spatiotemporal measurements of field grown plants. Yet HTPP systems and their sensors are subject to the temperature extremes where plants are grown, and this may affect overall performance and accuracy. The purpose of this study was to characterize the only customizable proximal active reflectance sensor available for HTPP research, including a 10 °C increase in temperature during sensor warmup and in field conditions, and to suggest an operational use approach for researchers. Sensor performance was measured at 1.2 m using large titanium-dioxide white painted field normalization reference panels and the expected detector unity values as well as sensor body temperatures were recorded. The white panel reference measurements illustrated that individual filtered sensor detectors subjected to the same thermal change can behave differently. Across 361 observations of all filtered detectors before and after field collections where temperature changed by more than one degree, values changed an average of 0.24% per 1 °C. Recommendations based on years of sensor control data and plant field phenotyping agricultural research are provided to support ACS-470 researchers by using white panel normalization and sensor temperature stabilization.

Enhanced Contact Performance and Thermal Tolerance of Ni/Bi2Te3 Joints for Bi2Te3-Based Thermoelectric Devices

Ni metal has been widely used as a barrier layer in Bi₂Te₃-based thermoelectric devices, which establishes stable joints to link Bi₂Te₃-based legs and electrodes. However, the Ni/Bi₂Te₃ joints become very fragile when the devices were exposed to high temperature, causing severe performance deterioration and even device failure. Herein, stable Ni/Bi₂Te₃ joints have been established by arc spraying of the Ni barrier layer on the Bi₂Te₃-based alloys. The interface microstructure and contact performance including the bonding strength and contact resistivity of the arc-sprayed Ni/Bi₂Te₃ joints are investigated. The results indicate that, as compared with traditional Ni/Bi₂Te₃ joints, the arc-sprayed Ni/Bi₂Te₃ joints have comparably low contact resistivity while possessing a 50% higher bonding strength. Aging the joints as an exposure to high-temperature circumstances, the arc-sprayed Ni/Bi₂Te₃ joints exhibit much better tolerance to the thermal shock with stable bonding strength and contact resistivity. The enhanced interfacial contact performance and thermal tolerance should be attributed to the thick Ni barrier layer and interface reaction layer with good Ohmic contact. This work provides an effective strategy to establish stable joints for the Bi₂Te₃-based thermoelectric devices with improved thermal stability.

High-Conductivity Chalcogenide Glasses in Ag-Ga2Te3-SnTe Systems and Their Suitability as Thermoelectric Materials

A novel high-conductivity Ag_x[(Ga₂Te₃)₃₄(SnTe)₆₆]_100-x tellurium-based glassy system was fabricated via melt spinning with the glass formation area in the range of x = 0-15 mol %. A bulk Ag₁₀[(Ga₂Te₃)₃₄(SnTe)₆₆]₉₀ glass (A10) was obtained via spark plasma sintering at 450 K using a 5 min dwell time and 400 MPa pressure. The fabricated A10 glass exhibited higher room-temperature conductivity (σ_300 K = 46 S m^-1), larger glass transition temperature (T_g = 482 K), and ultralower thermal conductivity (∼0.19 W m^-1 K^-1) compared to those of previously reported Cu-Ge-Te, Cu-As-Te, Cu-Ge-As-Te, and Cu-As-Se-Te glassy systems with the approximate doping concentrations of 5-20%, demonstrating that this distinctive Ag-Ga₂Te₃-SnTe system is interesting materials for thermoelectric applications. The high-conductivity Ag-Ga₂Te₃-SnTe glassy system will extend investigations into similar glassy semiconductors and also can be used for preparing glass ceramics with potential applications in other fields.

All Cubic-Phase δ-TAGS Thermoelectrics Over the Entire Mid-Temperature Range

GeTe-based pseudo-binary (GeTe)_x (AgSbTe₂ )_{100- x} (TAGS-x) is recognized as a promising p-type mid-temperature thermoelectric material with outstanding thermoelectric performance; nevertheless, its intrinsic structural transition and metastable microstructure (due to Ag/Sb/Ge localization) restrict the long-time application of TAGS-x in practical thermoelectric devices. In this work, a series of non-stoichiometric (GeTe)_x (Ag_{1- δ} Sb_{1+ δ} Te_{2+ δ} )_{100- x} (x = 85∼50; δ = ≈0.20-0.23), referred to as δ-TAGS-x, with all cubic phase over the entire testing temperature range (300-773 K), is synthesized. Through optimization of crystal symmetry and microstructure, a state-of-the-art ZT_max of 1.86 at 673 K and average ZT_avg of 1.43 at ≈323-773 K are realized in δ-TAGS-75 (δ = 0.21), which is the highest value among all reported cubic-phase GeTe-based thermoelectric systems so far. As compared with stoichiometric TAGS-x, the remarkable thermoelectric achieved in cubic δ-TAGS-x can be attributed to the alleviation of highly (electrical and thermal) resistive grain boundary Ag₈ GeTe₆ phase. Moreover, δ-TAGS-x exhibits much better mechanical properties than stoichiometric TAGS-x, together with the outstanding thermoelectric performance, leading to a robust single-leg thermoelectric module with η_max of ≈10.2% and P_max of ≈0.191 W. The finding in this work indicates the great application potential of non-stoichiometric δ-TAGS-x in the field of mid-temperature waste heat harvesting.

High-Performance Stretchable Thermoelectric Generator for Self-Powered Wearable Electronics

Wearable thermoelectric generators (TEGs), which can convert human body heat to electricity, provide a promising solution for self-powered wearable electronics. However, their power densities still need to be improved aiming at broad practical applications. Here, a stretchable TEG that achieves comfortable wearability and outstanding output performance simultaneously is reported. When worn on the forehead at an ambient temperature of 15 °C, the stretchable TEG exhibits excellent power densities with a maximum value of 13.8 µW cm^-2 under the breezeless condition, and even as high as 71.8 µW cm^-2 at an air speed of 2 m s^-1 , being one of the highest values for wearable TEGs. Furthermore, this study demonstrates that this stretchable TEG can effectively power a commercial light-emitting diode and stably drive an electrocardiogram module in real-time without the assistance of any additional power supply. These results highlight the great potential of these stretchable TEGs for power generation applications.

Analysis of the Scale of Global Human Needs and Opportunities for Sustainable Catalytic Technologies

We analyzed the enormous scale of global human needs, their carbon footprint, and how they are connected to energy availability. We established that most challenges related to resource security and sustainability can be solved by providing distributed, affordable, and clean energy. Catalyzed chemical transformations powered by renewable electricity are emerging successor technologies that have the potential to replace fossil fuels without sacrificing the wellbeing of humans. We highlighted the technical, economic, and societal advantages and drawbacks of short- to medium-term decarbonization solutions to gauge their practicability, economic feasibility, and likelihood for widespread acceptance on a global scale. We detailed catalysis solutions that enhance sustainability, along with strategies for catalyst and process development, frontiers, challenges, and limitations, and emphasized the need for planetary stewardship. Electrocatalytic processes enable the production of solar fuels and commodity chemicals that address universal issues of the water, energy and food security nexus, clothing, the building sector, heating and cooling, transportation, information and communication technology, chemicals, consumer goods and services, and healthcare, toward providing global resource security and sustainability and enhancing environmental and social justice.

Doping Copper Selenide for Tuning the Crystal Structure and Thermoelectric Performance of Germanium Telluride-Based Materials

Germanium telluride (GeTe) compounds exhibit excellent thermoelectric performance. In this study, copper selenide (Cu₂Se) was used to tune the crystal structure and carrier concentration (n_H) of GeTe materials. The zT of the 1% Cu₂Se-doped GeTe sample reaches 1.32, which is 52% higher than that of the pure phase. The results show that Cu₂Se tunes the GeTe crystal structure and carrier concentration to achieve promising enhancements to the thermoelectric performance. Meanwhile, a herringbone-like crystal structure that reduces the lattice thermal conductivity was observed. However, because the directional movement of Cu ions at high temperatures leads to an increase in electrical conductivity, the electronic thermal conductivity also increased. This study focuses on crystal engineering strategies for the study of nontoxic thermoelectric materials.

Design of N-Type Textured Bi2 Te3 with Robust Mechanical Properties for Thermoelectric Micro-Refrigeration Application

Thermoelectric refrigeration is one of the mature techniques used for cooling applications, with the great advantage of miniaturization over traditional compression refrigeration. Due to the anisotropic thermoelectric properties of n-type bismuth telluride (Bi₂ Te₃ ) alloys, these two common methods, including the liquid phase hot deformation (LPHD) and traditional hot forging (HF) methods, are of considerable importance for texture engineering to enhance performance. However, their effects on thermoelectric and mechanical properties are still controversial and not clear yet. Moreover, there has been little documentation of mechanical properties related to micro-refrigeration applications. In this work, the above-mentioned methods are separately employed to control the macroscopic grain orientation for bulk n-type Bi₂ Te₃ samples. The HF method enabled the stabilization of both composition and carrier concentration, therefore yielding a higher quality factor to compare with that of LPHD samples, supported by DFT calculations. In addition to superior thermoelectric performance, the HF sample also exhibited robust mechanical properties due to the presence of nano-scale distortion and dense dislocation, which is the prerequisite for realizing ultra-precision machining. This work helps to pave the way for the utilization of n-type Bi₂ Te₃ for commercial micro-refrigeration applications.

Screening Metal Electrodes for Thermoelectric PbTe

Historically, both p- and n-type PbTe show extraordinary thermoelectric figures of merit within 300-600 °C for power generation applications. A full realization of the potential of these high-performance thermoelectric materials on a device level largely depends on the electrical and thermal contacts with the metal electrodes. Chemical inertness with a slow diffusion could be an important criterion for the selection of metal electrodes. In this work, the diffusion of the total 12 potential metal electrodes in PbTe diffusion couples are focused on and sorted, suggesting the superiority of Co as an electrode for its low diffusion coefficient and interfacial contact resistivity, inertial to PbTe and compatibility in temperature for sintering. The strategy used in this work is believed to be applicable to the selection of electrodes for other thermoelectric materials.

Giant thermal switching in ferromagnetic VSe2 with programmable switching temperature

Active and reversible modulation of thermal conductivity can realize efficient heat energy management in many applications such as thermoelectrics. Using first-principles calculations, this study reports a giant thermal switching ratio of 12, much higher than previously reported values, in monolayer 2H-VSe₂ above room temperature. Detailed analysis indicates that the high thermal switching ratio is dominated by the ferromagnetic ordering induced phonon bandgap, which significantly suppresses the phonon-phonon scattering phase space across the entire vibration spectrum. The thermal switching in bulk 2H-VSe₂ is also investigated and the thermal switching ratio reaches 9.2 at the magnetic transition temperature. Both the phonon-phonon scattering space phase and phonon anharmonicity are responsible for the 9.2-fold thermal switching. This study advances the understanding of heat energy transport in two-dimensional ferromagnets, and also provides new insight into heat energy control and conversion.