n-type charge transport in heavily p-doped polymers

Photocatalytic doping of organic semiconductors

Chemical doping is an important approach to manipulating charge-carrier concentration and transport in organic semiconductors (OSCs)1-3 and ultimately enhances device performance4-7. However, conventional doping strategies often rely on the use of highly reactive (strong) dopants8-10, which are consumed during the doping process. Achieving efficient doping with weak and/or widely accessible dopants under mild conditions remains a considerable challenge. Here, we report a previously undescribed concept for the photocatalytic doping of OSCs that uses air as a weak oxidant (p-dopant) and operates at room temperature. This is a general approach that can be applied to various OSCs and photocatalysts, yielding electrical conductivities that exceed 3,000 S cm-1. We also demonstrate the successful photocatalytic reduction (n-doping) and simultaneous p-doping and n-doping of OSCs in which the organic salt used to maintain charge neutrality is the only chemical consumed. Our photocatalytic doping method offers great potential for advancing OSC doping and developing next-generation organic electronic devices.

Dopant Enhanced Conjugated Polymer Thin Film for Low-Power, Flexible and Wearable DMMP Sensor

Conjugated polymer has the potential to be applied on flexible devices as an active layer, but further investigation is still hindered by poor conductivity and mechanical stability. Here, this work demonstrates a dopant-enhanced conductive polymer thin film and its application in dimethyl methylphosphonate (DMMP) sensor. Among five comparable polymers this work employs, poly(bisdodecylthioquaterthiophene) (PQTS12) achieves the highest doping efficiency after doped by FeCl3, with the conductivity increasing by about five orders of magnitude. The changes in Young's modulus are also considered to optimize the conductivity and flexibility of this thin film, and finally the decay of conductivity is only 9.2% after 3000 times of mechanical bending. This work applies this thin film as the active layer of the DMMP gas sensor, which could be operated under 1 mV driving voltage and 28 nW power consumption, with a sustainable durability against bending and compression. In addition, this sensor is provided with alarm capability while exposed to the DMMP atmospheres at different hazard levels. This work expects that this general approach could offer solutions for the fabrication of low-power and flexible gas sensors, and provide guidance for next-generation wearable devices with broader applications.

Band-like transport in solution-processed perylene diimide dianion films with high Hall mobility

It is crucial to prepare high-mobility organic polycrystalline film through solution processing. However, the delocalized carrier transport of polycrystalline films in organic semiconductors has rarely been investigated through Hall-effect measurement. This study presents a strategy for building strong intermolecular interactions to fabricate solution-crystallized p-type perylene diimide (PDI) dianion films with a closer intermolecular π-π stacking distance of 3.25 Å. The highly delocalized carriers enable a competitive Hall mobility of 3 cm2 V-1 s-1, comparable to that of the reported high-mobility organic single crystals. The PDI dianion films exhibit a high electrical conductivity of 17 S cm-1 and typical band-like transport, as evidenced by the negative temperature linear coefficient of mobility proportional to T-3/2. This work demonstrates that, as the intermolecular π-π interactions become strong enough, they will display high mobility and conductivity, providing a new approach to developing high-mobility organic semiconductor materials.

Cations-Pillared and Polyaniline-Encapsulated Vanadate Cathode for High-Performance Aqueous Zinc-Ion Batteries

Layered vanadium-based oxides have emerged as highly promising candidates for aqueous zinc-ion batteries (AZIBs) due to their open-framework layer structure and high theoretical capacity among the diverse cathode materials investigated. However, the susceptibility to structural collapse during charge-discharge cycling severely hampers their advancement. Herein, we propose an effective strategy to enhance the cycling stability of vanadium oxides. Initially, the structural integrity of the host material is significantly reinforced by incorporating bi-cations Na+ and NH4 + as "pillars" between the V2O5 layers (NaNVO). Subsequently, surface coating with polyaniline (PA) is employed to further improve the conductivity of the active material. As anticipated, the assembled Zn//NaNVO@PA cell exhibits a remarkable discharge capacity of 492 mAh g-1 at 0.1 A g-1 and exceptional capacity retention up to 89.2 % after 1000 cycles at a current density of 5 A g-1. Moreover, a series of in-situ and ex-situ characterization techniques were utilized to investigate both Zn ions insertion/extraction storage mechanism and the contribution of polyaniline protonation process towards enhancing capacity.

Self-Doping and Self-Acid-Doping of Conjugated Polymer Bioelectronics: The Case for Accuracy in Nomenclature

Conjugated polymers are enabling the development of flexible bioelectronics, largely driven by their organic nature which facilitates modification and tuning to suit a variety of applications. As organic semiconductors, conjugated polymers require a dopant to exhibit electrical conductivity, which in physiological conditions can result in dopant loss and thereby deterioration in electronic properties. To overcome this challenge, "self-doped" and self-acid-doped conjugated polymers having ionized pendant groups covalently bound to their backbone are being developed. The ionized group in a "self-doped" polymer behaves as the counterion that maintains electroneutrality, while an external dopant is required to induce charge transfer. The ionized group in a self-acid-doped polymer induces charge transfer and behaves as the counterion balancing the charges. Despite their doping processes being different, the two terms, self-doped and self-acid-doped, are often used interchangeably in the literature. Here, the differences are highlighted in the doping mechanisms of self-doped and self-acid-doped polymers, and it is proposed that the term "self-doped" should be replaced by "self-compensated," while reserving the term self-acid-doped for polymers that are intrinsically doped without the need of an external dopant. This is followed by a summary of examples of self-acid-doping in bioelectronics, highlighting their stability in the conductive state under physiological conditions.

Extremely Electron-Withdrawing Lewis-Paired CN Groups for Organic p-Dopants

P-type chemical doping (p-doping) is a key technique to modulate the optical, electrical, and electronic properties of organic semiconductors. However, typical functional groups in organic p-dopants have insufficient electron-withdrawing strength, and the inevitable diffusion of dopants in host matrices degrades doping stabilities. Herein, we utilize extremely electron-withdrawing Lewis-paired CN groups as a new class of building blocks for designing unprecedentedly strong organic p-dopants with excellent doping stability. Various Lewis acids are paired with CN-functionalized conjugated molecules in the solution state, which strengthens the electron-withdrawing properties of CN groups almost twofold. The large dopants afford outstanding doping stability against continuous heating and long-term atmospheric exposure, which is promising for practical applications in devices. Given the broad applicability of this simple combinatorial approach, it may impact many fields of (opto)electronics.

A Novel Method to Analyze the Relationship between Thermoelectric Coefficient and Energy Disorder of Any Density of States in an Organic Semiconductor

In this work, a unified method is proposed for analyzing the relationship between the Seebeck coefficient and the energy disorder of organic semiconductors at any multi-parameter density of states (DOS) to study carrier transport in disordered thermoelectric organic semiconductors and the physical meaning of improved DOS parameters. By introducing the Gibbs entropy, a new multi-parameter DOS and traditional Gaussian DOS are used to verify this method, and the simulated result of this method can well fit the experiment data obtained on three organic devices. In particular, the impact of DOS parameters on the Gibbs entropy can also influence the impact of the energy disorder on the Seebeck coefficient.

Efficient and air-stable n-type doping in organic semiconductors

Chemical doping of organic semiconductors (OSCs) enables feasible tuning of carrier concentration, charge mobility, and energy levels, which is critical for the applications of OSCs in organic electronic devices. However, in comparison with p-type doping, n-type doping has lagged far behind. The achievement of efficient and air-stable n-type doping in OSCs would help to significantly improve electron transport and device performance, and endow new functionalities, which are, therefore, gaining increasing attention currently. In this review, the issue of doping efficiency and doping air stability in n-type doped OSCs was carefully addressed. We first clarified the main factors that influenced chemical doping efficiency in n-type OSCs and then explain the origin of instability in n-type doped films under ambient conditions. Doping microstructure, charge transfer, and dissociation efficiency were found to determine the overall doping efficiency, which could be precisely tuned by molecular design and post treatments. To further enhance the air stability of n-doped OSCs, design strategies such as tuning the lowest unoccupied molecular orbital (LUMO) energy level, charge delocalization, intermolecular stacking, in situ n-doping, and self-encapsulations are discussed. Moreover, the applications of n-type doping in advanced organic electronics, such as solar cells, light-emitting diodes, field-effect transistors, and thermoelectrics are being introduced. Finally, an outlook is provided on novel doping ways and material systems that are aimed at stable and efficient n-type doped OSCs.

Synthesis of V2O5·nH2O nanobelts@polyaniline core-shell structures with highly efficient Zn2+ storage

Aqueous zinc-ion batteries (AZIBs) are regarded as attractive candidates for next-generation energy storage devices. Among various cathode materials, V₂O₅·nH₂O (VOH) possesses a high theoretical capacity but poor cycle stability due to the susceptibility of its open structure to damage by the quick shuttling of Zn²⁺. Herein, the structural stability of VOH is directly improved by wrapping polyaniline (PANI) on the VOH nanobelts (VOH@PANI). As a cathode material for AZIBs, the VOH nanobelts@PANI core-shell structures exhibit an outstanding cycle stability of 98% after 2000 cycles at 2 A g^-1. The improved conductivity and additional energy storage contribution of the PANI endow VOH@PANI with a specific capacity as high as 440 mAh g^-1 at 0.1 A g^-1, substantially higher than pure VOH (291 mAh g^-1). At the same time, high energy and power densities of 349 Wh kg^-1 and 3347 W kg^-1 are achieved. This work not only demonstrates that p-type doped PANI coatings on VOH can boost the Zn²⁺ storage of VOH, but also provides a novel method to enhance cathode materials for high electrochemical performance.

Unravelling Disorder Effects on Thermoelectric Properties of Semicrystalline Polymers in a Wide Range of Doping Levels

Thermoelectric (TE) performance of a specific semicrystalline polymer is studied experimentally only in a limited range of doping levels with molecular doping methods. The doping level is finely controlled via in situ electrochemical doping in a wide range of carrier concentrations with an electrolyte ([PMIM]⁺ [TFSI]^- )-gated organic electrochemical transistor system. Then, the charge generation/transport and TE properties of four p-type semicrystalline polymers are analyzed and their dynamic changes of crystalline morphologies and local density of states (DOS) during electrochemical doping are compared. These polymers are synthesized based on poly[(2,5-bis(2-alkyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophene-2-yl)benzo[c][1,2,5]thiadiazole)] by varying side chains: With oligoethylene glycol (OEG) substituents, facile p-doping is achieved because of easy penetration of TFSI^- ions into the polymer matrix. However, the charge transport is hindered with longer OEG chains length because of the enhanced insulation. Therefore, with the shortest OEG substituents the electrical conductivity (30.1 S cm^-1 ) and power factor (2.88 µW m^-1 K^-2 ) are optimized. It is observed that all polymers exhibit p- to n-type transition in Seebeck coefficients in heavily doped states, which can be achieved by electrochemical doping. These TE behaviors are interpreted based on the relation between the localized DOS band structure and molecular packing structure during electrochemical doping.

Greatly increased electrical conductivity of PBTTT-C14 thin film via controllable single precursor vapor phase infiltration

Doping is an important strategy for effectively regulating the charge carrier concentration of semiconducting materials. In this study, the electronic properties of organic-inorganic hybrid semiconducting polymers, synthesized viain situcontrolled vapor phase infiltration (VPI) of poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) with the metal precursors molybdenum pentachloride (MoCl₅) and titanium tetrachloride (TiCl₄), were altered and characterized. The conductivities of the infiltration-doped PBTTT-C14 thin films were enhanced by up to 9 and 4 orders of magnitude, respectively. The significantly improved electrical properties may result from interactions between metal atoms in the metal precursors and sulfur of the thiophene rings, thus forming new chemical bonds. Importantly, VPI doping has little influence on the structure of the PBTTT-C14 thin films. Even if various dopant molecules infiltrate the polymer matrix, the interlayer spacing of the films will inevitably expand, but it has negligible effects on the overall morphology and structure of the film. Also, Lewis acid-doped PBTTT-C14 thin films exhibited excellent environmental stability. Therefore, the VPI-based doping process has great potential for use in processing high-quality conductive polymer films.

Renewed Prospects for Organic Photovoltaics

Organic photovoltaics (OPVs) have progressed steadily through three stages of photoactive materials development: (i) use of poly(3-hexylthiophene) and fullerene-based acceptors (FAs) for optimizing bulk heterojunctions; (ii) development of new donors to better match with FAs; (iii) development of non-fullerene acceptors (NFAs). The development and application of NFAs with an A-D-A configuration (where A = acceptor and D = donor) has enabled devices to have efficient charge generation and small energy losses (E_loss < 0.6 eV), resulting in substantially higher power conversion efficiencies (PCEs) than FA-based devices. The discovery of Y6-type acceptors (Y6 = 2,2'-((2Z,2'Z)-((12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro-[1,2,5]-thiadiazolo[3,4-e]-thieno[2″,3″:4',5']thieno-[2',3':4,5]pyrrolo-[3,2-g]thieno-[2',3':4,5]thieno-[3,2-b]indole-2,10-diyl)bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile) with an A-DA' D-A configuration has further propelled the PCEs to go beyond 15% due to smaller E_loss values (∼0.5 eV) and higher external quantum efficiencies. Subsequently, the PCEs of Y6-series single-junction devices have increased to >19% and may soon approach 20%. This review provides an update of recent progress of OPV in the following aspects: developments of novel NFAs and donors, understanding of the structure-property relationships and underlying mechanisms of state-of-the-art OPVs, and tasks underpinning the commercialization of OPVs, such as device stability, module development, potential applications, and high-throughput manufacturing. Finally, an outlook and prospects section summarizes the remaining challenges for the further development of OPV technology.

Molecular Doping Increases the Semitransparent Photovoltaic Performance of Dilute Bulk Heterojunction Film with Discontinuous Polymer Donor Networks

The semitransparent and colorful properties of organic solar cells (OSCs) attract intensive academic interests due to their potential application in building integrated photovoltaics, wearable electronics, and so forth. The most straightforward and effective method to tune these optical properties is varying the componential ratio in the blend film. However, the increase in device transmittance inevitably sacrifices the photovoltaic performance because of severe carrier recombination that originates from discontinuous charge-transport networks in the blend film. Herein, a strategy is proposed via the molecular-doping strategy to overcome these shortcomings. It is discovered that p-doping is able to release the trapped holes in segregated polymer domains leading to short-circuit current enhancement, while n-doping is more effective to fill the bandgap states producing a higher fill factor. More importantly, either type of doping improves the photovoltaic performance in the semitransparent photovoltaic devices. These discoveries provide a new pathway to breaking the compromise between the photovoltaic performance and optical transmittance in semitransparent OSCs, and hold promise for their future commercialization.

Highly efficient modulation doping: A path toward superior organic thermoelectric devices

We investigate the charge and thermoelectric transport in modulation-doped large-area rubrene thin-film crystals with different crystal phases. We show that modulation doping allows achieving superior doping efficiencies even for high doping densities, when conventional bulk doping runs into the reserve regime. Modulation-doped orthorhombic rubrene achieves much improved thermoelectric power factors, exceeding 20 μW m^-1 K^-2 at 80°C. Theoretical studies give insight into the energy landscape of the heterostructures and its influence on qualitative trends of the Seebeck coefficient. Our results show that modulation doping together with high-mobility crystalline organic semiconductor films is a previosly unexplored strategy for achieving high-performance organic thermoelectrics.

Lateral Fully Organic P-N Diodes Created in a Single Donor-Acceptor Copolymer

P-N junctions exist in many solid-state organic devices, such as light-emitting diodes, solar cells, and thermoelectric devices. Creating P-N junctions by bulk chemical doping in a single organic material (like silicon doped by boron and phosphorus) may capitalize the vast scientific and technological groundwork established in the inorganic semiconducting field. However, high-performance single-organic-material P-N junctions are seldom reported, because the diffusion of the dopant counterions often leads to transient rectification properties. Herein, a new type of lateral fully organic diodes created in single donor-acceptor (D-A) copolymer films with only one P-type dopant is reported. The achieved lateral devices exhibit high current densities of ≈3.83 A cm^-2 and a high rectification ratio of ≈2100, which are beyond the requirements for high-frequency identification tags. The P- to N-type polarity switching mechanism is proposed after spectroscopic and structural tests. Decent stability of the organic diode is obtained, which is due to the long channel length and low diffusion speed of the large size of dopants. This work opens the opportunities to create P-N junctions in ways of silicon-based inorganic semiconductors and promises new opportunities for integrating organic materials for flexible and printable organic devices.

Backbone-driven host-dopant miscibility modulates molecular doping in NDI conjugated polymers

Molecular doping is the key to enabling organic electronic devices, however, the design strategies to maximize doping efficiency demands further clarity and comprehension. Previous reports focus on the effect of the side chains, but the role of the backbone is still not well understood. In this study, we synthesize a series of NDI-based copolymers with bithiophene, vinylene, and acetylenic moieties (P1G, P2G, and P3G, respectively), all containing branched triethylene glycol side chains. Using computational and experimental methods, we explore the impact of the conjugated backbone using three key parameters for doping in organic semiconductors: energy levels, microstructure, and miscibility. Our experimental results show that P1G undergoes the most efficient n-type doping owed primarily to its higher dipole moment, and better host-dopant miscibility with N-DMBI. In contrast, P2G and P3G possess more planar backbones than P1G, but the lack of long-range order, and poor host-dopant miscibility limit their doping efficiency. Our data suggest that backbone planarity alone is not enough to maximize the electrical conductivity (σ) of n-type doped organic semiconductors, and that backbone polarity also plays an important role in enhancing σ via host-dopant miscibility. Finally, the thermoelectric properties of doped P1G exhibit a power factor of 0.077 μW m-1 K-2, and ultra-low in-plane thermal conductivity of 0.13 W m-1K-1 at 5 mol% of N-DMBI, which is among the lowest thermal conductivity values reported for n-type doped conjugated polymers.

Correlating Charge Transport Properties of Conjugated Polymers in Solution Aggregates and Thin-Film Aggregates

The role of solution aggregates on the charge transport process of conjugated polymers in electronic devices has gained increasing attention; however, the correlation of the charge carrier mobilities between the solution aggregates and the solid-state films remains elusive. Herein, three polymers, FBDOPV-2T, FBDOPV-2F2T, and FBDOPV-4F2T, are designed and synthesized with distinct aggregation behavior in solution. By combining contact-free ultrafast terahertz (THz) spectroscopy and field-effect transistor measurements, we track the charge carrier mobility of the aggregates of these polymers from the solution to the thin-film state. Remarkably, the mobility of these three polymers is found to follow nearly the same trend (FBDOPV-2T>FBDOPV-2F2T≫FBDOPV-4F2T) in both solutions and thin-film states. The quantitative mobility correlation indicates that the charge transport properties of solution aggregates play a critical role in determining the thin-film charge transport properties and final device performance. Our results highlight the importance of investigating and controlling solution aggregation structures towards efficient organic electronic devices.

Manipulating Carrier Concentration by Self-Assembled Monolayers in Thermoelectric Polymer Thin Films

Conjugated polymers have attracted considerable attention for thermoelectric applications in recent years due to their plentiful resources, diverse structures, mechanical flexibility, and low thermal conductivity. Herein, we demonstrate a new strategy of modulating charge carrier concentration of chemical-doped polymer films by modifying the substrate with self-assembled monolayers (SAMs). The SAM with a trifluoromethyl terminal group is found to accumulate holes in the polymer thin films, while the SAM with an amino terminal group tends to donate electrons to the polymer films. Thermoelectric thin films of conjugated donor-acceptor copolymer exhibit high power factors of 55.6-61.0 μW m^-1 K^-2 on SAMs with polar terminal groups. These power factors are 49% higher than that on the SAM with the nonpolar terminal group and 3 times higher than that on pristine substrate. The high power factor is ascribed to the modulated charge carrier concentration and improved charge carrier mobility as induced by SAMs.

Achieving Efficient n-Doping of Conjugated Polymers by Molecular Dopants

ConspectusMolecular doping is one of the most central propositions in the field of organic electronics. Unlike classical inorganic semiconductors doped by atomic substitution, organic conjugated materials react with molecular dopants, and then intermolecular charge transfer is involved within. Therefore, the complex noncovalent interactions between two components often cause the molecular dopant to destroy the orderly stacking of the host organic materials and reduce the original properties of the material, such as carrier mobility, which here we call the "doping dilemma." Recently, many studies focus on improving p-doping efficiency and electrical conductivity of doped conjugated polymers; however, the development of n-type molecular doping currently lags far behind that of its p-counterpart. It is well-known that both efficient p- and n-type molecular doping are indispensable in various organic electronic devices, including light-emitting diodes, photovoltaics, field-effect transistors, and thermoelectrics. It is thus an urgent requirement to achieve efficient n-doping in conjugated polymers.In this Account, we give a brief overview of our efforts to improve the n-doping efficiency in conjugated polymers with several strategies from the aspects of the polymer/dopant molecular design and the exploration of the n-type molecular doping mechanism and charge transport mechanism in n-doped organic materials. For the conjugated polymer engineering, we first demonstrate that increasing the electron affinity of the host polymer through halogen substitution can boost the n-doping efficiency. Still, the rigid coplanar backbones of conjugated polymers play a crucial role in the polaron delocalization and final electrical performance. In addition, we emphasize the importance of morphology control in the doped polymers to address the "doping dilemma." For n-dopants designing, we summarize some basic guidelines from molecular sizes and shapes, the interaction between dopants (or dopant cations) and polymers, and the effects of dopants on morphology to design high-efficacy n-type molecular dopants. We propose that the polymers and the dopants need to be treated as a whole system; while enhancing the ionization efficiency, more attention should be paid to the carrierization (free-carrier generation) efficiency of these binary systems. In the end, we adopt the n-type polymer thermoelectric material as an example to discuss the grand challenges encountered in practical applications of n-doped conjugated polymers. The air stability and micrometer-thick thermo-leg processing of n-doped polymers are highlighted for thermoelectric applications. It is our hope that this Account showcases a blueprint for rational approaches and a deep understanding toward the design and development of efficient n-doping in conjugated polymers, bringing n-doped organic materials into the next era.