1
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Qiao Y, Liu X, Zheng Y, Zhang Y, Li Z, Zhu S, Jiang H, Cui Z, Wu S. Wireless Powered Microwave-Light Conversion Platform with Dual-Stimulus Nanoresponder Coating for Deep-Seated Photodynamic Therapy. ACS NANO 2024; 18:17086-17099. [PMID: 38952327 DOI: 10.1021/acsnano.4c03654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
Traditional external field-assisted therapies, e.g., microwave (MW) therapy and phototherapy, cannot effectively and minimally damage eliminate deep-seated infection, owing to the poor penetrability of light and low reactive oxygen species (ROS) stimulation capability of MW. Herein, an implantable and wireless-powered therapeutic platform (CNT-FeTHQ-TS), in which external MW can be converted into internal light via MW wireless-powered light-emitting chips, is designed to eradicate deep-seated tissue infections by MW-induced deep-seated photodynamic therapy. In application, CNT-FeTHQ-TS is implanted at internal lesions, and the chip emits light under external MW irradiation. Subsequently, CNT-FeTHQ coating in the platform can respond to both MW and light simultaneously to generate ROS and MW-hyperthermia for rapid and precise sterilization at focus. Importantly, MW also improves the photodynamic performance of CNT-FeTHQ by introducing vacancies in FeTHQ to facilitate the photoexcitation process and changing the spin state of electrons to inhibit the complexation of photogenerated electron-hole pairs, which were confirmed by simulation calculations and in situ MW-irradiated photoluminescence experiments. In vivo, CNT-FeTHQ-TS can effectively cure mice with Staphylococcus aureus infection in dorsal subcutaneous tissue. This work overcomes the key clinical limitations of safe energy transmission and conversion for treating deep-seated infections.
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Affiliation(s)
- Yuqian Qiao
- School of Materials Science & Engineering, Peking University, Beijing 100871, China
| | - Xiangmei Liu
- School of Life Science and Health Engineering, Hebei University of Technology, Xiping Avenue 5340, Beichen District, Tianjin 300401, China
| | - Yufeng Zheng
- School of Materials Science & Engineering, Peking University, Beijing 100871, China
| | - Yu Zhang
- Department of Orthopedics, Guangdong Provincial People's Hospital, Guangdong Academy of Medical Sciences, Guangzhou 510080, China
| | - Zhaoyang Li
- School of Materials Science & Engineering, the Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of China, Tianjin University, Tianjin 300072, China
| | - Shengli Zhu
- School of Materials Science & Engineering, the Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of China, Tianjin University, Tianjin 300072, China
| | - Hui Jiang
- School of Materials Science & Engineering, the Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of China, Tianjin University, Tianjin 300072, China
| | - Zhenduo Cui
- School of Materials Science & Engineering, the Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of China, Tianjin University, Tianjin 300072, China
| | - Shuilin Wu
- School of Materials Science & Engineering, Peking University, Beijing 100871, China
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2
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Zhen J, Sun J, Xu X, Wu Z, Song W, Ying Y, Liang S, Miao L, Cao J, Lv W, Song C, Yao Y, Xing M. M-N 3 Configuration on Boron Nitride Boosts Singlet Oxygen Generation via Peroxymonosulfate Activation for Selective Oxidation. Angew Chem Int Ed Engl 2024; 63:e202402669. [PMID: 38637296 DOI: 10.1002/anie.202402669] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 04/02/2024] [Accepted: 04/17/2024] [Indexed: 04/20/2024]
Abstract
Singlet oxygen (1O2) is an essential reactive species responsible for selective oxidation of organic matter, especially in Fenton-like processes. However, due to the great limitations in synthesizing catalysts with well-defined active sites, the controllable production and practical application of 1O2 remain challenging. Herein, guided by theoretical simulations, a series of boron nitride-based single-atom catalysts (BvBN/M, M=Co, Fe, Cu, Ni and Mn) were synthesized to regulate 1O2 generation by activating peroxymonosulfate (PMS). All the fabricated BvBN/M catalysts with explicit M-N3 sites promoted the self-decomposition of the two PMS molecules to generate 1O2 with high selectivity, where BvBN/Co possessed moderate adsorption energy and d-band center exhibited superior catalytic activity. As an outcome, the BvBN/Co-PMS system coupled with membrane filtration technology could continuously transform aromatic alcohols to aldehydes with nearly 100 % selectivity and conversion rate under mild conditions, suggesting the potential of this novel catalytic system for green organic synthesis.
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Affiliation(s)
- Jianzheng Zhen
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Jiahao Sun
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Xiangwei Xu
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Zenglong Wu
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Wenkai Song
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Yunzhan Ying
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Shikun Liang
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Lingshan Miao
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Jiazhen Cao
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai, 200237, China
| | - Weiyang Lv
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, China
| | - Changsheng Song
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Yuyuan Yao
- National Engineering Lab of Textile Fiber Materials & Processing Technology (Zhejiang), Zhejiang Sci-Tech University, Hangzhou, 310018, China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, China
| | - Mingyang Xing
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai, 200237, China
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3
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Zhou J, Lu H, Chen D, Huang M, Yan GQ, Al-matouq F, Chang J, Djugba D, Jiang Z, Wang H, Du CR. Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride. SCIENCE ADVANCES 2024; 10:eadk8495. [PMID: 38691598 PMCID: PMC11062567 DOI: 10.1126/sciadv.adk8495] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2023] [Accepted: 04/01/2024] [Indexed: 05/03/2024]
Abstract
Optically active spin defects in wide bandgap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy [Formula: see text] spin defects contained in few-layer-thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by [Formula: see text] spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and [Formula: see text] spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.
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Affiliation(s)
- Jingcheng Zhou
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Hanyi Lu
- Department of Physics, University of California, San Diego, La Jolla, CA 92093, USA
| | - Di Chen
- Department of Physics, University of Houston, Houston, TX 77204, USA
- Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USA
| | - Mengqi Huang
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Gerald Q. Yan
- Department of Physics, University of California, San Diego, La Jolla, CA 92093, USA
| | - Faris Al-matouq
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Jiu Chang
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Dziga Djugba
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Zhigang Jiang
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Hailong Wang
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Chunhui Rita Du
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
- Department of Physics, University of California, San Diego, La Jolla, CA 92093, USA
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4
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Shen L, Xiao D, Cao T. Proximity-Induced Exchange Interaction: A New Pathway for Quantum Sensing Using Spin Centers in Hexagonal Boron Nitride. J Phys Chem Lett 2024; 15:4359-4366. [PMID: 38619851 DOI: 10.1021/acs.jpclett.4c00722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have attracted a great deal of interest because of its potential in various quantum applications. Due to hBN's two-dimensional nature, the spin center in hBN can be engineered in the proximity of the target material, providing advantages over its three-dimensional counterparts, such as the nitrogen-vacancy center in diamond. Here we propose a novel quantum sensing protocol driven by exchange interaction between the spin center in hBN and the underlying magnetic substrate induced by the magnetic proximity effect. By first-principles calculation, we demonstrate that the induced exchange interaction dominates over the dipole-dipole interaction by orders of magnitude when in the proximity. The interaction remains antiferromagnetic across all stacking configurations between the spin center in hBN and the target van der Waals magnets. Additionally, we explored the scaling behavior of the exchange field as a function of the spatial separation between the spin center and the targets.
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Affiliation(s)
- Lingnan Shen
- Department of Physics, University of Washington, Seattle, Washington 98195-1560, United States
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, Washington 98195-1560, United States
- Department of Materials Science & Engineering, University of Washington, Seattle, Washington 98195-2120, United States
- Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Ting Cao
- Department of Materials Science & Engineering, University of Washington, Seattle, Washington 98195-2120, United States
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5
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van de Stolpe GL, Kwiatkowski DP, Bradley CE, Randall J, Abobeih MH, Breitweiser SA, Bassett LC, Markham M, Twitchen DJ, Taminiau TH. Mapping a 50-spin-qubit network through correlated sensing. Nat Commun 2024; 15:2006. [PMID: 38443361 PMCID: PMC10914733 DOI: 10.1038/s41467-024-46075-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2023] [Accepted: 02/09/2024] [Indexed: 03/07/2024] Open
Abstract
Spins associated to optically accessible solid-state defects have emerged as a versatile platform for exploring quantum simulation, quantum sensing and quantum communication. Pioneering experiments have shown the sensing, imaging, and control of multiple nuclear spins surrounding a single electron spin defect. However, the accessible size of these spin networks has been constrained by the spectral resolution of current methods. Here, we map a network of 50 coupled spins through high-resolution correlated sensing schemes, using a single nitrogen-vacancy center in diamond. We develop concatenated double-resonance sequences that identify spin-chains through the network. These chains reveal the characteristic spin frequencies and their interconnections with high spectral resolution, and can be fused together to map out the network. Our results provide new opportunities for quantum simulations by increasing the number of available spin qubits. Additionally, our methods might find applications in nano-scale imaging of complex spin systems external to the host crystal.
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Affiliation(s)
- G L van de Stolpe
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - D P Kwiatkowski
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - C E Bradley
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - J Randall
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - M H Abobeih
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - S A Breitweiser
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, 200 South 33rd Street, Philadelphia, PA, 19104, USA
| | - L C Bassett
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, 200 South 33rd Street, Philadelphia, PA, 19104, USA
| | - M Markham
- Element Six Innovation, Fermi Avenue, Harwell Oxford, Didcot, Oxfordshire, OX11 0QR, UK
| | - D J Twitchen
- Element Six Innovation, Fermi Avenue, Harwell Oxford, Didcot, Oxfordshire, OX11 0QR, UK
| | - T H Taminiau
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands.
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands.
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6
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Hesselmeier E, Kuna P, Takács I, Ivády V, Knolle W, Son NT, Ghezellou M, Ul-Hassan J, Dasari D, Kaiser F, Vorobyov V, Wrachtrup J. Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide. PHYSICAL REVIEW LETTERS 2024; 132:090601. [PMID: 38489642 DOI: 10.1103/physrevlett.132.090601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Accepted: 01/17/2024] [Indexed: 03/17/2024]
Abstract
Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. Here we probe and characterize the particularly rich nuclear-spin environment around single silicon vacancy color centers (V2) in 4H-SiC. By using the electron spin-3/2 qudit as a four level sensor, we identify several sets of ^{29}Si and ^{13}C nuclear spins through their hyperfine interaction. We extract the major components of their hyperfine coupling via optical detected nuclear magnetic resonance, and assign them to shells in the crystal via the density function theory simulations. We utilize the ground-state level anticrossing of the electron spin for dynamic nuclear polarization and achieve a nuclear-spin polarization of up to 98±6%. We show that this scheme can be used to detect the nuclear magnetic resonance signal of individual spins and demonstrate their coherent control. Our work provides a detailed set of parameters and first steps for future use of SiC as a multiqubit memory and quantum computing platform.
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Affiliation(s)
- Erik Hesselmeier
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Pierre Kuna
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - István Takács
- Eötvös Loránd University, Egyetem tér 1-3, H-1053 Budapest, Hungary
- MTA-ELTE Lendület "Momentum" NewQubit Research Group, Pázmány Péter, Sétány 1/A, 1117 Budapest, Hungary
| | - Viktor Ivády
- Eötvös Loránd University, Egyetem tér 1-3, H-1053 Budapest, Hungary
- MTA-ELTE Lendület "Momentum" NewQubit Research Group, Pázmány Péter, Sétány 1/A, 1117 Budapest, Hungary
- Department of Physics, Chemistry and Biology, Linköping University, Olaus Magnus väg, 583 30 Linköping, Sweden
| | - Wolfgang Knolle
- Department of Sensoric Surfaces and Functional Interfaces, Leibniz-Institute of Surface Engineering (IOM), Permoserstraße 15, 04318 Leipzig, Germany
| | - Nguyen Tien Son
- Department of Physics, Chemistry and Biology, Linköping University, Olaus Magnus väg, 583 30 Linköping, Sweden
| | - Misagh Ghezellou
- Department of Physics, Chemistry and Biology, Linköping University, Olaus Magnus väg, 583 30 Linköping, Sweden
| | - Jawad Ul-Hassan
- Department of Physics, Chemistry and Biology, Linköping University, Olaus Magnus väg, 583 30 Linköping, Sweden
| | - Durga Dasari
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Florian Kaiser
- Materials Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST), 4422 Belvaux, Luxembourg
- University of Luxembourg, 41 rue du Brill, L-4422 Belvaux, Luxembourg
| | - Vadim Vorobyov
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
| | - Jörg Wrachtrup
- 3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany
- Max Planck Institute for solid state physics, Heisenbergstraße 1, 70569 Stuttgart, Germany
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7
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Murzakhanov FF, Sadovnikova MA, Gracheva IN, Mamin GV, Baibekov EI, Mokhov EN. Exploring the properties of theVB-defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation. NANOTECHNOLOGY 2024; 35:155001. [PMID: 38154127 DOI: 10.1088/1361-6528/ad1940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 12/27/2023] [Indexed: 12/30/2023]
Abstract
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gapEg= 6 eV, containing a negatively charged boron vacancy (VB-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value ofVB-spin polarization under optical pumping withλext= 532 nm laser using high-frequency (νmw= 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to beP≈ 38.4%. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40μs, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constantCq= 180 kHz related to nuclear quadrupole moment of14N. These results have fundamental importance for understanding the spin properties of boron vacancy.
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Affiliation(s)
- Fadis F Murzakhanov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | | | - Irina N Gracheva
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Georgy V Mamin
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Eduard I Baibekov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Evgeniy N Mokhov
- Ioffe Institute, Polytekhnicheskaya, 26, St Petersburg 194021, Russia
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8
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Gong R, Du X, Janzen E, Liu V, Liu Z, He G, Ye B, Li T, Yao NY, Edgar JH, Henriksen EA, Zu C. Isotope engineering for spin defects in van der Waals materials. Nat Commun 2024; 15:104. [PMID: 38168074 PMCID: PMC10761865 DOI: 10.1038/s41467-023-44494-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024] Open
Abstract
Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ([Formula: see text]) in hexagonal boron nitride (hBN), we grow isotopically purified h10B15N crystals. Compared to [Formula: see text] in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded [Formula: see text] spin transitions as well as extended coherence time T2 and relaxation time T1. For quantum sensing, [Formula: see text] centers in our h10B15N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the [Formula: see text] hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor 15N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.
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Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xinyi Du
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Eli Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Vincent Liu
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Norman Y Yao
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - James H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
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9
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Gelly RJ, White AD, Scuri G, Liao X, Ahn GH, Deng B, Watanabe K, Taniguchi T, Vučković J, Park H. An Inverse-Designed Nanophotonic Interface for Excitons in Atomically Thin Materials. NANO LETTERS 2023; 23:8779-8786. [PMID: 37695253 DOI: 10.1021/acs.nanolett.3c02931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/12/2023]
Abstract
Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encapsulating atomically thin materials, as a waveguiding layer while simultaneously improving the optical quality of the embedded films. When combined with a photonic inverse design, it becomes a complete nanophotonic platform to interface with optically active 2D materials. Grating couplers and low-loss waveguides provide optical interfacing and routing, tunable cavities provide a large exciton-photon coupling to transition metal dichalcogenide (TMD) monolayers through Purcell enhancement, and metasurfaces enable the efficient detection of TMD dark excitons. This work paves the way for advanced 2D-material nanophotonic structures for classical and quantum nonlinear optics.
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Affiliation(s)
| | - Alexander D White
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Giovanni Scuri
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | | | - Geun Ho Ahn
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | | | | | | | - Jelena Vučković
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
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10
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Clua-Provost T, Durand A, Mu Z, Rastoin T, Fraunié J, Janzen E, Schutte H, Edgar JH, Seine G, Claverie A, Marie X, Robert C, Gil B, Cassabois G, Jacques V. Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS 2023; 131:126901. [PMID: 37802939 DOI: 10.1103/physrevlett.131.126901] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 08/26/2023] [Indexed: 10/08/2023]
Abstract
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V_{B}^{-}) centers hosted in isotopically engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with ^{15}N yields a simplified and well-resolved hyperfine structure of V_{B}^{-} centers, while purification with ^{10}B leads to narrower ESR linewidths. These results establish isotopically purified h^{10}B^{15}N crystals as the optimal host material for future use of V_{B}^{-} spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically induced polarization of ^{15}N nuclei in h^{10}B^{15}N, whose mechanism relies on electron-nuclear spin mixing in the V_{B}^{-} ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform.
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Affiliation(s)
- T Clua-Provost
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - A Durand
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - Z Mu
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - T Rastoin
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - J Fraunié
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - E Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
| | - H Schutte
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
| | - J H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
| | - G Seine
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France
| | - A Claverie
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France
| | - X Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - C Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - B Gil
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - G Cassabois
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - V Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
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11
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Saidov K, Razzokov J, Parpiev O, Yüzbasi NS, Kovalska N, Blugan G, Ruzimuradov O. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe 2/h-BN Field-Effect Transistor. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2559. [PMID: 37764588 PMCID: PMC10536122 DOI: 10.3390/nano13182559] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 09/06/2023] [Accepted: 09/13/2023] [Indexed: 09/29/2023]
Abstract
2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties. The combination of transition metal dichalcogenides (TMDCs) and two dimensional (2D) materials like hexagonal boron nitride (h-BN) in lateral heterostructures offers a unique platform for designing and engineering novel electronic devices. We report the fabrication of highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) consisting of a few layers of MoTe2/h-BN heterojunctions. In our initial exploration of tellurium-based semiconducting TMDs, we directed our attention to MoTe2 crystals with thicknesses exceeding 12 nm. Our primary focus centered on investigating the transport characteristics and quantitatively assessing the surface interface heterostructure. Our transconductance (gm) measurements indicate that the very efficient carrier modulation with an ILG FET is two times larger than standard back gating, and it demonstrates unipolarity of the device. The ILG FET exhibited highly unipolar p-type behavior with a high on/off ratio, and it significantly increased the mobility in MoTe2/h-BN heterochannels, achieving improvement as one of the highest recorded mobility increments. Specifically, we observed hole and electron mobility values ranging from 345 cm2 V-1 s-1 to 285 cm2 V-1 s-1 at 80 K. We predict that our ability to observe the intrinsic, heterointerface conduction in the channels was due to a drastic reduction of the Schottky barriers, and electrostatic gating is suggested as a method for controlling the phase transitions in the few layers of TMDC FETs. Moreover, the simultaneous structural phase transitions throughout the sample, achieved through electrostatic doping control, presents new opportunities for developing phase change devices using atomically thin membranes.
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Affiliation(s)
- Kamoladdin Saidov
- Department of Electronics and Radio Engineering, Tashkent University of Information Technologies, Tashkent 100200, Uzbekistan
- Department of Information Technologies, Tashkent International University of Education, Tashkent 100207, Uzbekistan
- Department of Electrical and Computer Engineering, Ajou University in Tashkent, Tashkent 100204, Uzbekistan
| | - Jamoliddin Razzokov
- R&D Center, New Uzbekistan University, Tashkent 100007, Uzbekistan;
- School of Engineering, Central Asian University, Tashkent 111221, Uzbekistan
- Institute of Fundamental and Applied Research, National Research University TIIAME, Tashkent 100000, Uzbekistan
| | - Odilkhuja Parpiev
- Material Sciences Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent 100084, Uzbekistan;
| | - Nur Sena Yüzbasi
- Laboratory for High Performance Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland; (N.S.Y.); (N.K.)
| | - Natalia Kovalska
- Laboratory for High Performance Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland; (N.S.Y.); (N.K.)
| | - Gurdial Blugan
- Laboratory for High Performance Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland; (N.S.Y.); (N.K.)
| | - Olim Ruzimuradov
- Department of Natural and Mathematic Sciences, Turin Polytechnic University in Tashkent, Tashkent 100095, Uzbekistan
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12
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Liu Y, Gao T. First-principles study of controllable contact types in Janus MoSH/GaN van der Waals heterostructure. J Chem Phys 2023; 159:091101. [PMID: 37655766 DOI: 10.1063/5.0164208] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Accepted: 08/14/2023] [Indexed: 09/02/2023] Open
Abstract
The search for contact materials with low contact resistance and tunable Schottky barrier (SB) height of two-dimensional (2D) materials is important for improving the electronic performance. Inspired by the recently synthesized metallic Janus MoSH, this study employs first-principles calculations to investigate the electronic structure, mechanical properties, and interface characteristics of Janus MoSH/GaN and MoHS/GaN van der Waals (vdW) heterostructures. We find that both heterostructures exhibit isotropic mechanical properties and form p-type Schottky barrier contacts (p-ShC) and the SB height of MoHS/GaN is smaller than that of the MoSH/GaN heterostructure. The variation in SB height and contact type under biaxial strain and electric field is also studied for both vdW heterostructures, respectively. Compared to the MoSH/GaN heterostructure, the MoHS/GaN heterostructure can transition to Ohmic contact (OhC) under biaxial strain and electric field, making the S-face contact of MoSH with GaN a more effective contact approach. These findings could provide a new pathway for the design of controllable Schottky nanodevices and high-performance electronic devices on GaN-based vdW heterostructures.
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Affiliation(s)
- Yutao Liu
- Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
| | - Tinghong Gao
- Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
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13
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Rizzato R, Schalk M, Mohr S, Hermann JC, Leibold JP, Bruckmaier F, Salvitti G, Qian C, Ji P, Astakhov GV, Kentsch U, Helm M, Stier AV, Finley JJ, Bucher DB. Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing. Nat Commun 2023; 14:5089. [PMID: 37607945 PMCID: PMC10444786 DOI: 10.1038/s41467-023-40473-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Accepted: 07/26/2023] [Indexed: 08/24/2023] Open
Abstract
Negatively-charged boron vacancy centers ([Formula: see text]) in hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors for temperature, pressure, and static magnetic fields. However, their short spin coherence time limits their scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by two orders of magnitude, approaching the fundamental T1 relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect radiofrequency signals with sub-Hz resolution. The corresponding sensitivity is benchmarked against that of state-of-the-art NV-diamond quantum sensors. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.
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Affiliation(s)
- Roberto Rizzato
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany.
- University of Bari, Department of Physics "M. Merlin", Via Amendola 173, Bari, 70125, Italy.
| | - Martin Schalk
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Stephan Mohr
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
| | - Jens C Hermann
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Joachim P Leibold
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, James-Franck-Str. 1, Garching bei München, 85748, Germany
| | - Fleming Bruckmaier
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
| | - Giovanna Salvitti
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- University of Bologna, Department of Chemistry "G. Ciamician", Via Selmi, 2, Bologna, 40126, Italy
| | - Chenjiang Qian
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
| | - Peirui Ji
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
| | - Georgy V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
| | - Ulrich Kentsch
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
- TU Dresden, 01062, Dresden, Germany
| | - Andreas V Stier
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Jonathan J Finley
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Dominik B Bucher
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany.
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany.
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14
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Zhou F, Jiang Z, Liang H, Ru S, Bettiol AA, Gao W. DC Magnetic Field Sensitivity Optimization of Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2023. [PMID: 37364230 DOI: 10.1021/acs.nanolett.3c01881] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2023]
Abstract
Spin defects existing in van der Waals materials attract wide attention thanks to their natural advantages for in situ quantum sensing, especially the negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (h-BN). Here we systematically investigate the laser and microwave power broadening in continuous-wave optically detected magnetic resonance (ODMR) of the VB- ensemble in h-BN, by revealing the behaviors of ODMR contrast and line width as a function of the laser and microwave powers. The experimental results are well explained by employing a two-level simplified model of ODMR dynamics. Furthermore, with optimized power, the DC magnetic field sensitivity of VB- ensemble is significantly improved up to 2.87 ± ± 0.07 μT/Hz. Our results provide important suggestions for further applications of VB- centers in quantum information processing and ODMR-based quantum sensing.
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Affiliation(s)
- Feifei Zhou
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Zhengzhi Jiang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Haidong Liang
- Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Andrew A Bettiol
- Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
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15
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Gale A, Scognamiglio D, Zhigulin I, Whitefield B, Kianinia M, Aharonovich I, Toth M. Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2023. [PMID: 37363816 DOI: 10.1021/acs.nanolett.3c01678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2023]
Abstract
Negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we investigate the charge state switching of VB defects under laser and electron beam excitation. We demonstrate deterministic, reversible switching between the -1 and 0 states (VB- ⇌ VB0 + e-), occurring at rates controlled by excess electrons or holes injected into hBN by a layered heterostructure device. Our work provides a means to monitor and manipulate the VB charge state, and to stabilize the -1 state which is a prerequisite for spin manipulation and optical readout of the defect.
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Affiliation(s)
- Angus Gale
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Dominic Scognamiglio
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Ivan Zhigulin
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Benjamin Whitefield
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW 2007, Australia
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16
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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17
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Cai H, Ru S, Jiang Z, Eng JJH, He R, Li FL, Miao Y, Zúñiga-Pérez J, Gao W. Spin Defects in hBN assisted by Metallic Nanotrenches for Quantum Sensing. NANO LETTERS 2023. [PMID: 37205843 DOI: 10.1021/acs.nanolett.3c00849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
The omnipresence of hexagonal boron nitride (hBN) in devices embedding two-dimensional materials has prompted it as the most sought after platform to implement quantum sensing due to its testing while operating capability. The negatively charged boron vacancy (VB-) in hBN plays a prominent role, as it can be easily generated while its spin population can be initialized and read out by optical means at room-temperature. But the lower quantum yield hinders its widespread use as an integrated quantum sensor. Here, we demonstrate an emission enhancement amounting to 400 by nanotrench arrays compatible with coplanar waveguide (CPW) electrodes employed for spin-state detection. By monitoring the reflectance spectrum of the resonators as additional layers of hBN are transferred, we have optimized the overall hBN/nanotrench optical response, maximizing thereby the luminescence enhancement. Based on these finely tuned heterostructures, we achieved an enhanced DC magnetic field sensitivity as high as 6 × 10-5 T/Hz1/2.
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Affiliation(s)
- Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhengzhi Jiang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - John Jun Hong Eng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore
| | - Ruihua He
- School of Biological Sciences, Nanyang Technological University, Singapore 637551, Singapore
| | - Fu-Li Li
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yansong Miao
- School of Biological Sciences, Nanyang Technological University, Singapore 637551, Singapore
| | - Jesús Zúñiga-Pérez
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore 637551, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore 637551, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
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18
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Guo L, Peng L, Li J, Zhang W, Shi B. Highly efficient U(VI) capture from nuclear wastewater by an easily synthesized lignin-derived biochar: Adsorption performance and mechanism. ENVIRONMENTAL RESEARCH 2023; 223:115416. [PMID: 36738769 DOI: 10.1016/j.envres.2023.115416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Revised: 01/27/2023] [Accepted: 02/01/2023] [Indexed: 06/18/2023]
Abstract
The efficient recycling of uranium (U) by adsorbents remains challenging due to the strong interference from coexisting impurities, insufficient desorption efficiency, and weak irradiation instability. In this work, a novel lignin-derived biochar (AL/BC) with high surface area and abundant functional groups was developed through a green and simple pyrolysis process, and an adsorbent for U(VI) capture was used. The optimist AL/BC-600 exhibited ultrahigh adsorption capacity for U(VI) of 4007 mg/g, possessing a wide pH range of 1-11, and powerful anti-interference ability when coexisting with various common cations and anions. In addition, AL/BC-600 showed high tolerance even under strong irradiation at a dose of 350 kGy. Most importantly, after the tenth round of the adsorption-desorption cyclic utilization, the adsorption efficiency and desorption rate of AL/BC-600 were actually over 95% and 80%, respectively. Hence, this study provides a green and simple process for synthesizing a novel adsorbent for highly efficient U(VI) capture, not only paving a path for alleviating the increasingly serious energy crisis, but also facilitating the low-carbon and circular development of lignin.
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Affiliation(s)
- Lijun Guo
- National Engineering Laboratory for Clean Technology of Leather Manufacture, Sichuan University, Chengdu, 610065, PR China
| | - Liangqiong Peng
- National Engineering Laboratory for Clean Technology of Leather Manufacture, Sichuan University, Chengdu, 610065, PR China
| | - Jiheng Li
- National Engineering Laboratory for Clean Technology of Leather Manufacture, Sichuan University, Chengdu, 610065, PR China
| | - Wenhua Zhang
- National Engineering Laboratory for Clean Technology of Leather Manufacture, Sichuan University, Chengdu, 610065, PR China; Key Laboratory of Leather Chemistry and Engineering of Ministry of Education, Sichuan University, Chengdu, 610065, PR China.
| | - Bi Shi
- National Engineering Laboratory for Clean Technology of Leather Manufacture, Sichuan University, Chengdu, 610065, PR China; Key Laboratory of Leather Chemistry and Engineering of Ministry of Education, Sichuan University, Chengdu, 610065, PR China
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19
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Cicirello G, Wang M, Sam QP, Hart JL, Williams NL, Yin H, Cha JJ, Wang J. Two-Dimensional Violet Phosphorus P 11: A Large Band Gap Phosphorus Allotrope. J Am Chem Soc 2023; 145:8218-8230. [PMID: 36996286 DOI: 10.1021/jacs.3c01766] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/01/2023]
Abstract
The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P11 was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P11 were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P11 was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) Å3. The structure differences between violet-P11, violet-P21, and fibrous-P21 are discussed. The violet-P11 crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P11, and exfoliated violet-P11 flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P11 crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P11 bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P11 is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.
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Affiliation(s)
- Gary Cicirello
- Department of Chemistry and Biochemistry, Wichita State University, Wichita, Kansas 67260, United States
| | - Mengjing Wang
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, United States
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Quynh P Sam
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - James L Hart
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Natalie L Williams
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Huabing Yin
- Institute for Computational Materials Science, Joint Center for Theoretical Physics, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Judy J Cha
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, United States
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Jian Wang
- Department of Chemistry and Biochemistry, Wichita State University, Wichita, Kansas 67260, United States
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20
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Wang Y, Liu R, Zhang Z, Wei J, Yang Z. Large Optical Asymmetry in Silver Nanoparticle Assemblies Enabled by CH-π Interaction-Mediated Chirality Transfer. J Am Chem Soc 2023; 145:4035-4044. [PMID: 36757911 DOI: 10.1021/jacs.2c11639] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/10/2023]
Abstract
Transfer of asymmetry from the molecular system to the other distinct system requires appropriate chemical interactions. Here, we show how the CH-π interaction, one of the weakest hydrogen bonds, can be applied to transfer the asymmetry from π-conjugated chiral molecules to the assemblies of plasmonic Ag nanoparticles, where the aliphatic chains of chiral molecules and the polystyrene chains grafted on Ag nanoparticles are served as the hydrogen donor and acceptor, respectively. The optical asymmetry g-factor of the chiral assemblies of plasmonic nanoparticles is strongly dependent on the molecular weight of the polystyrene ligand, the core structure of the molecule, and the aliphatic chain length of the chiral molecule. Importantly, we explore a molecular mixing strategy to enhance the asymmetry g-factor of chiral molecular assemblies, which consequently promotes the g-factor of chiral plasmonics efficiently, reaching a high value of ∼0.05 under optimal conditions. Overall, we rationalize the chirality transfer from chiral molecules to inorganic nanoparticles, providing the guidance for structural design of chiral nanocomposites with a high g-factor.
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Affiliation(s)
- Ye Wang
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, P.R. China
| | - Rongjuan Liu
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, P.R. China
| | - Zongze Zhang
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, P.R. China
| | - Jingjing Wei
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, P.R. China
| | - Zhijie Yang
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, P.R. China
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21
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Xu X, Solanki AB, Sychev D, Gao X, Peana S, Baburin AS, Pagadala K, Martin ZO, Chowdhury SN, Chen YP, Taniguchi T, Watanabe K, Rodionov IA, Kildishev AV, Li T, Upadhyaya P, Boltasseva A, Shalaev VM. Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nanocavity. NANO LETTERS 2023; 23:25-33. [PMID: 36383034 DOI: 10.1021/acs.nanolett.2c03100] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The negatively charged boron vacancy (VB-) defect in hexagonal boron nitride (hBN) with optically addressable spin states has emerged due to its potential use in quantum sensing. Remarkably, VB- preserves its spin coherence when it is implanted at nanometer-scale distances from the hBN surface, potentially enabling ultrathin quantum sensors. However, its low quantum efficiency hinders its practical applications. Studies have reported improving the overall quantum efficiency of VB- defects with plasmonics; however, the overall enhancements of up to 17 times reported to date are relatively modest. Here, we demonstrate much higher emission enhancements of VB- with low-loss nanopatch antennas (NPAs). An overall intensity enhancement of up to 250 times is observed, corresponding to an actual emission enhancement of ∼1685 times by the NPA, along with preserved optically detected magnetic resonance contrast. Our results establish NPA-coupled VB- defects as high-resolution magnetic field sensors and provide a promising approach to obtaining single VB- defects.
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Affiliation(s)
- Xiaohui Xu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
| | - Abhishek B Solanki
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Demid Sychev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
| | - Samuel Peana
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Aleksandr S Baburin
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Karthik Pagadala
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Zachariah O Martin
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Sarah N Chowdhury
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Yong P Chen
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, 8000Aarhus-C, Denmark
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai980-8577, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Ilya A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Alexander V Kildishev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Tongcang Li
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Alexandra Boltasseva
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Vladimir M Shalaev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
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22
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Aharonovich I, Tetienne JP, Toth M. Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:9227-9235. [PMID: 36413674 DOI: 10.1021/acs.nanolett.2c03743] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers─a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineering and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.
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Affiliation(s)
- Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | | | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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23
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Li S, Gali A. Identification of an Oxygen Defect in Hexagonal Boron Nitride. J Phys Chem Lett 2022; 13:9544-9551. [PMID: 36201340 PMCID: PMC9589898 DOI: 10.1021/acs.jpclett.2c02687] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 10/04/2022] [Indexed: 05/30/2023]
Abstract
Paramagnetic fluorescent defects in two-dimensional hexagonal boron nitride (hBN) are promising building blocks for quantum information processing. Although numerous defect-related single-photon sources and a few quantum bits have been found, except for the boron vacancy, their identification is still elusive. Here, we demonstrate that the comparison of experimental and first-principles simulated electron paramagnetic resonance (EPR) spectra is a powerful tool for defect identification in hBN, and first-principles modeling is inevitable in this process as a result of the dense nuclear spin environment of hBN. In particular, a recently observed EPR center is associated with the negatively charged oxygen vacancy complex by means of the many-body perturbation theory method on top of hybrid density functional calculations. To our surprise, the negatively charged oxygen vacancy complex produces a coherent emission around 2 eV with a well-reproducing previously recorded photoluminescence spectrum of some quantum emitters, according to our calculations.
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Affiliation(s)
- Song Li
- Wigner
Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
| | - Adam Gali
- Wigner
Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
- Department
of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3, H-1111Budapest, Hungary
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