1
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Gorobtsov OY, Miao L, Shao Z, Tan Y, Schnitzer N, Goodge BH, Ruf J, Weinstock D, Cherukara M, Holt MV, Nair H, Chen LQ, Kourkoutis LF, Schlom DG, Shen KM, Singer A. Spontaneous Supercrystal Formation During a Strain-Engineered Metal-Insulator Transition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403873. [PMID: 38881289 DOI: 10.1002/adma.202403873] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2024] [Revised: 06/04/2024] [Indexed: 06/18/2024]
Abstract
Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next-generation energy-efficient electronics. A previously unknown, hierarchically ordered, and anisotropic supercrystal state is reported and its intrinsic formation characterized in-situ during a Mott transition in a Ca2RuO4 thin film. Machine learning-assisted X-ray nanodiffraction together with cryogenic electron microscopy reveal multi-scale periodic domain formation at and below the film transition temperature (TFilm ≈ 200-250 K) and a separate anisotropic spatial structure at and above TFilm. Local resistivity measurements imply an intrinsic coupling of the supercrystal orientation to the material's anisotropic conductivity. These findings add a new degree of complexity to the physical understanding of Mott transitions, opening opportunities for designing materials with tunable electronic properties.
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Affiliation(s)
- Oleg Yu Gorobtsov
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Ludi Miao
- Department of Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Ziming Shao
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Yueze Tan
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Noah Schnitzer
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Berit Hansen Goodge
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, 14853, USA
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Jacob Ruf
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Daniel Weinstock
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Mathew Cherukara
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Martin Victor Holt
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Hari Nair
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Lena Fitting Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, 14853, USA
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, 14853, USA
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489, Berlin, Germany
| | - Kyle M Shen
- Department of Physics, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, 14853, USA
| | - Andrej Singer
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
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2
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Huai X, Acheampong E, Delles E, Winiarski MJ, Sorolla M, Nassar L, Liang M, Ramette C, Ji H, Scheie A, Calder S, Mourigal M, Tran TT. Noncentrosymmetric Triangular Magnet CaMnTeO 6: Strong Quantum Fluctuations and Role of s 0 versus s 2 Electronic States in Competing Exchange Interactions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313763. [PMID: 38506567 DOI: 10.1002/adma.202313763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2023] [Revised: 03/12/2024] [Indexed: 03/21/2024]
Abstract
Noncentrosymmetric triangular magnets offer a unique platform for realizing strong quantum fluctuations. However, designing these quantum materials remains an open challenge attributable to a knowledge gap in the tunability of competing exchange interactions at the atomic level. Here, a new noncentrosymmetric triangular S = 3/2 magnet CaMnTeO6 is created based on careful chemical and physical considerations. The model material displays competing magnetic interactions and features nonlinear optical responses with the capability of generating coherent photons. The incommensurate magnetic ground state of CaMnTeO6 with an unusually large spin rotation angle of 127°(1) indicates that the anisotropic interlayer exchange is strong and competing with the isotropic interlayer Heisenberg interaction. The moment of 1.39(1) µB, extracted from low-temperature heat capacity and neutron diffraction measurements, is only 46% of the expected value of the static moment 3 µB. This reduction indicates the presence of strong quantum fluctuations in the half-integer spin S = 3/2 CaMnTeO6 magnet, which is rare. By comparing the spin-polarized band structure, chemical bonding, and physical properties of AMnTeO6 (A = Ca, Sr, Pb), how quantum-chemical interpretation can illuminate insights into the fundamentals of magnetic exchange interactions, providing a powerful tool for modulating spin dynamics with atomically precise control is demonstrated.
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Affiliation(s)
- Xudong Huai
- Department of Chemistry, Clemson University, Clemson, SC, 29634, USA
| | | | - Erich Delles
- Department of Chemistry, Clemson University, Clemson, SC, 29634, USA
| | - Michał J Winiarski
- Applied Physics and Mathematics and Advanced Materials Center, Gdansk University of Technology, Gdansk, 80-233, Poland
| | - Maurice Sorolla
- Institute of Chemistry, University of the Philippines Diliman, Quezon City, 1101, Philippines
| | - Lila Nassar
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Mingli Liang
- Department of Chemistry, University of Houston, Houston, TX, 77204, USA
| | - Caleb Ramette
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Huiwen Ji
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Allen Scheie
- MPA-Q, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Stuart Calder
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Martin Mourigal
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Thao T Tran
- Department of Chemistry, Clemson University, Clemson, SC, 29634, USA
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3
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Xu T, Tian F, Jiao D, Fan J, Jin Z, Zhang L, Zhang W, Zheng L, Singh DJ, Zhang L, Zheng W, Cui X. In Situ Construction of Built-In Opposite Electric Field Balanced Surface Adsorption for Hydrogen Evolution Reaction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309249. [PMID: 38152975 DOI: 10.1002/smll.202309249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 11/19/2023] [Indexed: 12/29/2023]
Abstract
Achieving a balance between H-atom adsorption and binding with H2 desorption is crucial for catalyzing hydrogen evolution reaction (HER). In this study, the feasibility of designing and implementing built-in opposite electric fields (OEF) is demonstrated to enable optimal H atom adsorption and H2 desorption using the Ni3(BO3)2/Ni5P4 heterostructure as an example. Through density functional theory calculations of planar averaged potentials, it shows that opposite combinations of inward and outward electric fields can be achieved at the interface of Ni3(BO3)2/Ni5P4, leading to the optimization of the H adsorption free energy (ΔGH*) near electric neutrality (0.05 eV). Based on this OEF concept, the study experimentally validated the Ni3(BO3)2/Ni5P4 system electrochemically forming Ni3(BO3)2 through cyclic voltammetry scanning of B-doped Ni5P4. The surface of Ni3(BO3)2 undergoes reconstruction, as characterized by Grazing Incidence Wide-Angle X-ray Scattering (GIWAXS) and in situ Raman spectroscopy. The resulting catalyst exhibits excellent HER activity in alkaline media, with a low overpotential of 33 mV at 10 mA cm-2 and stability maintained for over 360 h. Therefore, the design strategy of build-in opposite electric field enables the development of high-performance HER catalysts and presents a promising approach for electrocatalyst advancement.
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Affiliation(s)
- Tianyi Xu
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun, 130012, China
| | - Fuyu Tian
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun, 130012, China
| | - Dongxu Jiao
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun, 130012, China
| | - Jinchang Fan
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun, 130012, China
| | - Zhaoyong Jin
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun, 130012, China
| | - Lei Zhang
- College of Chemistry, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Wei Zhang
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun, 130012, China
| | - Lirong Zheng
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - David J Singh
- Department of Physics and Astronomy and Department of Chemistry, University of Missouri, Columbia, MO, 65211, USA
| | - Lijun Zhang
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun, 130012, China
| | - Weitao Zheng
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun, 130012, China
| | - Xiaoqiang Cui
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun, 130012, China
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4
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Cheema SS, Shanker N, Hsu SL, Schaadt J, Ellis NM, Cook M, Rastogi R, Pilawa-Podgurski RCN, Ciston J, Mohamed M, Salahuddin S. Giant energy storage and power density negative capacitance superlattices. Nature 2024; 629:803-809. [PMID: 38593860 DOI: 10.1038/s41586-024-07365-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Accepted: 03/29/2024] [Indexed: 04/11/2024]
Abstract
Dielectric electrostatic capacitors1, because of their ultrafast charge-discharge, are desirable for high-power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for emerging autonomous microelectronics and microsystems2-5. Moreover, state-of-the-art miniaturized electrochemical energy storage systems-microsupercapacitors and microbatteries-currently face safety, packaging, materials and microfabrication challenges preventing on-chip technological readiness2,3,6, leaving an opportunity for electrostatic microcapacitors. Here we report record-high electrostatic energy storage density (ESD) and power density, to our knowledge, in HfO2-ZrO2-based thin film microcapacitors integrated into silicon, through a three-pronged approach. First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO2-ZrO2 films are engineered near a field-driven ferroelectric phase transition to exhibit amplified charge storage by the negative capacitance effect7-12, which enhances volumetric ESD beyond the best-known back-end-of-the-line-compatible dielectrics (115 J cm-3) (ref. 13). Second, to increase total energy storage, antiferroelectric superlattice engineering14 scales the energy storage performance beyond the conventional thickness limitations of HfO2-ZrO2-based (anti)ferroelectricity15 (100-nm regime). Third, to increase the storage per footprint, the superlattices are conformally integrated into three-dimensional capacitors, which boosts the areal ESD nine times and the areal power density 170 times that of the best-known electrostatic capacitors: 80 mJ cm-2 and 300 kW cm-2, respectively. This simultaneous demonstration of ultrahigh energy density and power density overcomes the traditional capacity-speed trade-off across the electrostatic-electrochemical energy storage hierarchy1,16. Furthermore, the integration of ultrahigh-density and ultrafast-charging thin films within a back-end-of-the-line-compatible process enables monolithic integration of on-chip microcapacitors5, which can unlock substantial energy storage and power delivery performance for electronic microsystems17-19.
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Affiliation(s)
- Suraj S Cheema
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Nirmaan Shanker
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Shang-Lin Hsu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Joseph Schaadt
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- Department of Mechanical Engineering, University of California, Berkeley, CA, USA
| | - Nathan M Ellis
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Matthew Cook
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Ravi Rastogi
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | | | - Jim Ciston
- National Center for Electron Microscopy Facility, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Mohamed Mohamed
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Sayeef Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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5
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Wang S, Li W, Deng C, Hong Z, Gao HB, Li X, Gu Y, Zheng Q, Wu Y, Evans PG, Li JF, Nan CW, Li Q. Giant electric field-induced second harmonic generation in polar skyrmions. Nat Commun 2024; 15:1374. [PMID: 38355699 PMCID: PMC10866987 DOI: 10.1038/s41467-024-45755-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 02/04/2024] [Indexed: 02/16/2024] Open
Abstract
Electric field-induced second harmonic generation allows electrically controlling nonlinear light-matter interactions crucial for emerging integrated photonics applications. Despite its wide presence in materials, the figures-of-merit of electric field-induced second harmonic generation are yet to be elevated to enable novel device functionalities. Here, we show that the polar skyrmions, a topological phase spontaneously formed in PbTiO3/SrTiO3 ferroelectric superlattices, exhibit a high comprehensive electric field-induced second harmonic generation performance. The second-order nonlinear susceptibility and modulation depth, measured under non-resonant 800 nm excitation, reach ~54.2 pm V-1 and ~664% V-1, respectively, and high response bandwidth (higher than 10 MHz), wide operating temperature range (up to ~400 K) and good fatigue resistance (>1010 cycles) are also demonstrated. Through combined in-situ experiments and phase-field simulations, we establish the microscopic links between the exotic polarization configuration and field-induced transition paths of the skyrmions and their electric field-induced second harmonic generation response. Our study not only presents a highly competitive thin-film material ready for constructing on-chip devices, but opens up new avenues of utilizing topological polar structures in the fields of photonics and optoelectronics.
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Affiliation(s)
- Sixu Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Wei Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Chenguang Deng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zijian Hong
- School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China.
- Research Institute of Zhejiang University-Taizhou, 318000, Taizhou, Zhejiang, China.
| | - Han-Bin Gao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, China
| | - Xiaolong Li
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 201204, Shanghai, China
| | - Yueliang Gu
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 201204, Shanghai, China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, China.
| | - Yongjun Wu
- School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China
| | - Paul G Evans
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Qian Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
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6
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Goodge BH. Layered ferroelectric materials make waves - and vortices. Nature 2024; 626:488-489. [PMID: 38356063 DOI: 10.1038/d41586-024-00231-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
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7
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Sánchez-Santolino G, Rouco V, Puebla S, Aramberri H, Zamora V, Cabero M, Cuellar FA, Munuera C, Mompean F, Garcia-Hernandez M, Castellanos-Gomez A, Íñiguez J, Leon C, Santamaria J. A 2D ferroelectric vortex pattern in twisted BaTiO 3 freestanding layers. Nature 2024; 626:529-534. [PMID: 38356067 PMCID: PMC10866709 DOI: 10.1038/s41586-023-06978-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Accepted: 12/14/2023] [Indexed: 02/16/2024]
Abstract
The wealth of complex polar topologies1-10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric-dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure11-14 domains that evolve into vortex-like structures at the nanoscale15-17 level. Although ferroelectricity is known to couple strongly with strain (both homogeneous18 and inhomogeneous19,20), the effect of mechanical constraints21 on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles provides an opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated with the twisting. Furthermore, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding provides opportunities to create two-dimensional high-density vortex crystals that would enable us to explore previously unknown physical effects and functionalities.
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Affiliation(s)
- G Sánchez-Santolino
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
| | - V Rouco
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
| | - S Puebla
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - H Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
| | - V Zamora
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - M Cabero
- ICTS Centro Nacional de Microscopia Electrónica 'Luis Brú', Universidad Complutense, Madrid, Spain
| | - F A Cuellar
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - C Munuera
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - F Mompean
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - M Garcia-Hernandez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - A Castellanos-Gomez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - J Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - C Leon
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
| | - J Santamaria
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
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8
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Shao YT, Chen Z, Zhang C, K P H, Muller DA. Robust Imaging of Three-dimensional Polar Textures Using 4D-STEM Diffraction Imaging and Multislice Electron Ptychography. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2023; 29:276. [PMID: 37613037 DOI: 10.1093/micmic/ozad067.126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Affiliation(s)
- Yu-Tsun Shao
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, USA
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Zhen Chen
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Chenyu Zhang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Harikrishnan K P
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
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9
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Mundy JA, Grosso BF, Heikes CA, Ferenc Segedin D, Wang Z, Shao YT, Dai C, Goodge BH, Meier QN, Nelson CT, Prasad B, Xue F, Ganschow S, Muller DA, Kourkoutis LF, Chen LQ, Ratcliff WD, Spaldin NA, Ramesh R, Schlom DG. Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering. SCIENCE ADVANCES 2022; 8:eabg5860. [PMID: 35108054 PMCID: PMC8809685 DOI: 10.1126/sciadv.abg5860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. By confining thin layers of BiFeO3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.
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Affiliation(s)
- Julia A. Mundy
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | | | - Colin A. Heikes
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20878, USA
| | - Dan Ferenc Segedin
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA
| | - Zhe Wang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Yu-Tsun Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Cheng Dai
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Berit H. Goodge
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| | - Quintin N. Meier
- Department of Materials, ETH Zürich, Zürich CH-8093, Switzerland
| | - Christopher T. Nelson
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
| | - Bhagwati Prasad
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA
| | - Fei Xue
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | | | - David A. Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| | - Lena F. Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - William D. Ratcliff
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20878, USA
- Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA
| | | | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA
- Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Darrell G. Schlom
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
- Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
- Corresponding author.
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