1
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Orr KP, Diao J, Dey K, Hameed M, Dubajić M, Gilbert HL, Selby TA, Zelewski SJ, Han Y, Fitzsimmons MR, Roose B, Li P, Fan J, Jiang H, Briscoe J, Robinson IK, Stranks SD. Strain Heterogeneity and Extended Defects in Halide Perovskite Devices. ACS ENERGY LETTERS 2024; 9:3001-3011. [PMID: 38911532 PMCID: PMC11190982 DOI: 10.1021/acsenergylett.4c00921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Revised: 05/13/2024] [Accepted: 05/20/2024] [Indexed: 06/25/2024]
Abstract
Strain is an important property in halide perovskite semiconductors used for optoelectronic applications because of its ability to influence device efficiency and stability. However, descriptions of strain in these materials are generally limited to bulk averages of bare films, which miss important property-determining heterogeneities that occur on the nanoscale and at interfaces in multilayer device stacks. Here, we present three-dimensional nanoscale strain mapping using Bragg coherent diffraction imaging of individual grains in Cs0.1FA0.9Pb(I0.95Br0.05)3 and Cs0.15FA0.85SnI3 (FA = formamidinium) halide perovskite absorbers buried in full solar cell devices. We discover large local strains and striking intragrain and grain-to-grain strain heterogeneity, identifying distinct islands of tensile and compressive strain inside grains. Additionally, we directly image dislocations with surprising regularity in Cs0.15FA0.85SnI3 grains and find evidence for dislocation-induced antiphase boundary formation. Our results shine a rare light on the nanoscale strains in these materials in their technologically relevant device setting.
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Affiliation(s)
- Kieran
W. P. Orr
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Jiecheng Diao
- Center
for Transformative Science, ShanghaiTech
University, Shanghai 201210, China
| | - Krishanu Dey
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
| | - Madsar Hameed
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, U.K.
| | - Miloš Dubajić
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Hayley L. Gilbert
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
- Diamond
Light Source, Harwell Science and Innovation Campus, Fermi Avenue, Didcot OX11 0DE, U.K.
| | - Thomas A. Selby
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Szymon J. Zelewski
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Yutong Han
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Melissa R. Fitzsimmons
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Bart Roose
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Peng Li
- Diamond
Light Source, Harwell Science and Innovation Campus, Fermi Avenue, Didcot OX11 0DE, U.K.
| | - Jiadong Fan
- Center
for Transformative Science, ShanghaiTech
University, Shanghai 201210, China
| | - Huaidong Jiang
- Center
for Transformative Science, ShanghaiTech
University, Shanghai 201210, China
| | - Joe Briscoe
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, U.K.
| | - Ian K. Robinson
- London
Centre
for Nanotechnology, University College London, London WC1E 6BT, U.K.
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11793, United States
| | - Samuel D. Stranks
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Center
for Transformative Science, ShanghaiTech
University, Shanghai 201210, China
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2
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Xia J, Gao C, Peng C, Liu Y, Chen PA, Wei H, Jiang L, Liao L, Chen H, Hu Y. Multidimensional Deep Ultraviolet (DUV) Synapses Based on Organic/Perovskite Semiconductor Heterojunction Transistors for Antispoofing Facial Recognition Systems. NANO LETTERS 2024; 24:6673-6682. [PMID: 38779991 DOI: 10.1021/acs.nanolett.4c01356] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for facial recognition systems. While neuromorphic systems offer integrated sensing-memory-processing functions, they still struggle with efficient antispoofing techniques. Here we introduce a neuromorphic facial recognition system incorporating multidimensional deep ultraviolet (DUV) optoelectronic synapses to address these challenges. To overcome the complexity and high cost of producing DUV synapses using traditional wide-bandgap semiconductors, we developed a low-temperature (≤70 °C) solution process for fabricating DUV synapses based on PEA2PbBr4/C8-BTBT heterojunction field-effect transistors. This method enables the large-scale (4-in.), uniform, and transparent production of DUV synapses. These devices respond to both DUV and visible light, showing multidimensional features. Leveraging the unique ability of the multidimensional DUV synapse (MDUVS) to discriminate real human skin from artificial materials, we have achieved robust neuromorphic facial recognition with antispoofing capability, successfully identifying genuine human faces with an accuracy exceeding 92%.
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Affiliation(s)
- Jiangnan Xia
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Changsong Gao
- Institute of Optoelectronic Display National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Chengyuan Peng
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Yu Liu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Ping-An Chen
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Huan Wei
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Liao
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Huipeng Chen
- Institute of Optoelectronic Display National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
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3
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Dong S, Hu Y, Zhang X, Guo Z, Chen R, Mao L. Anisotropy of Anion Diffusion in All-Inorganic Perovskite Single Crystals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307360. [PMID: 38217294 DOI: 10.1002/smll.202307360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 01/02/2024] [Indexed: 01/15/2024]
Abstract
Ion diffusion is a fundamentally important process in understanding and manipulating the optoelectronic properties of semiconductors. Most current studies on ionic diffusion have been focusing on perovskite polycrystalline thin films and nanocrystals. However, the random orientation and grain boundaries can heavily interfere with the kinetics of ion diffusion, where the experimental results only reveal the average ion exchange kinetics and the actual ion diffusion mechanisms perpendicular to the direction of individual crystal facets remain unclear. Here, the anion (Cl, I) diffusion anisotropy on (111) and (100) facets of CsPbBr3 single crystals is demonstrated. The as-grown single crystals with (111) and (100) facets exhibit anisotropic growth with different halide incorporation, which lead to different resulting optoelectronic properties. Combined experimental characterizations and theoretical calculations reveal that the (111) CsPbBr3 shows a faster anion diffusion behavior compared with that of the (100) CsPbBr3, with a lower diffusion energy barrier, a larger built-in electric field, and lower inverse defect formation energy. The work highlights the anion diffusion anisotropic mechanisms perpendicular to the direction of individual crystal facets for optimizing and designing perovskite optoelectronic devices.
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Affiliation(s)
- Shunhong Dong
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Xuanyu Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Zhu Guo
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Rui Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Lingling Mao
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
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4
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Sun SQ, Tai JW, He W, Yu YJ, Feng ZQ, Sun Q, Tong KN, Shi K, Liu BC, Zhu M, Wei G, Fan J, Xie YM, Liao LS, Fung MK. Enhancing Light Outcoupling Efficiency via Anisotropic Low Refractive Index Electron Transporting Materials for Efficient Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400421. [PMID: 38430204 DOI: 10.1002/adma.202400421] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Revised: 02/25/2024] [Indexed: 03/03/2024]
Abstract
Thanks to the extensive efforts toward optimizing perovskite crystallization properties, high-quality perovskite films with near-unity photoluminescence quantum yield are successfully achieved. However, the light outcoupling efficiency of perovskite light-emitting diodes (PeLEDs) is impeded by insufficient light extraction, which poses a challenge to the further advancement of PeLEDs. Here, an anisotropic multifunctional electron transporting material, 9,10-bis(4-(2-phenyl-1H-benzo[d]imidazole-1-yl)phenyl) anthracene (BPBiPA), with a low extraordinary refractive index (ne) and high electron mobility is developed for fabricating high-efficiency PeLEDs. The anisotropic molecular orientations of BPBiPA can result in a low ne of 1.59 along the z-axis direction. Optical simulations show that the low ne of BPBiPA can effectively mitigate the surface plasmon polariton loss and enhance the photon extraction efficiency in waveguide mode, thereby improving the light outcoupling efficiency of PeLEDs. In addition, the high electron mobility of BPBiPA can facilitate balanced carrier injection in PeLEDs. As a result, high-efficiency green PeLEDs with a record external quantum efficiency of 32.1% and a current efficiency of 111.7 cd A-1 are obtained, which provides new inspirations for the design of electron transporting materials for high-performance PeLEDs.
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Affiliation(s)
- Shuang-Qiao Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jing-Wen Tai
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Wei He
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - You-Jun Yu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Zi-Qi Feng
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Qi Sun
- Macau Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Zhuhai MUST Science and Technology Research Institute, Macau University of Science and Technology, Taipa, Macau, 999078, P. R. China
| | - Kai-Ning Tong
- Institute of Materials Science, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong, 518055, P. R. China
| | - Kefei Shi
- Institute of Materials Science, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong, 518055, P. R. China
| | - Bo-Chen Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Min Zhu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Guodan Wei
- Institute of Materials Science, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong, 518055, P. R. China
| | - Jian Fan
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yue-Min Xie
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P.R. China
| | - Liang-Sheng Liao
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Macau Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Zhuhai MUST Science and Technology Research Institute, Macau University of Science and Technology, Taipa, Macau, 999078, P. R. China
| | - Man-Keung Fung
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Macau Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Zhuhai MUST Science and Technology Research Institute, Macau University of Science and Technology, Taipa, Macau, 999078, P. R. China
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5
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Zhang Y, Abdi-Jalebi M, Larson BW, Zhang F. What Matters for the Charge Transport of 2D Perovskites? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404517. [PMID: 38779825 DOI: 10.1002/adma.202404517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 05/13/2024] [Indexed: 05/25/2024]
Abstract
Compared to 3D perovskites, 2D perovskites exhibit excellent stability, structural diversity, and tunable bandgaps, making them highly promising for applications in solar cells, light-emitting diodes, and photodetectors. However, the trade-off for worse charge transport is a critical issue that needs to be addressed. This comprehensive review first discusses the structure of 3D and 2D metal halide perovskites, then summarizes the significant factors influencing charge transport in detail and provides a brief overview of the testing methods. Subsequently, various strategies to improve the charge transport are presented, including tuning A'-site organic spacer cations, A-site cations, B-site metal cations, and X-site halide ions. Finally, an outlook on the future development of improving the 2D perovskites' charge transport is discussed.
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Affiliation(s)
- Yixin Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Mojtaba Abdi-Jalebi
- Institute for Materials Discovery, University College London, London, WC1E 7JE, UK
| | - Bryon W Larson
- Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Fei Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
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6
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Hu S, Thiesbrummel J, Pascual J, Stolterfoht M, Wakamiya A, Snaith HJ. Narrow Bandgap Metal Halide Perovskites for All-Perovskite Tandem Photovoltaics. Chem Rev 2024; 124:4079-4123. [PMID: 38527274 PMCID: PMC11009966 DOI: 10.1021/acs.chemrev.3c00667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 03/07/2024] [Accepted: 03/15/2024] [Indexed: 03/27/2024]
Abstract
All-perovskite tandem solar cells are attracting considerable interest in photovoltaics research, owing to their potential to surpass the theoretical efficiency limit of single-junction cells, in a cost-effective sustainable manner. Thanks to the bandgap-bowing effect, mixed tin-lead (Sn-Pb) perovskites possess a close to ideal narrow bandgap for constructing tandem cells, matched with wide-bandgap neat lead-based counterparts. The performance of all-perovskite tandems, however, has yet to reach its efficiency potential. One of the main obstacles that need to be overcome is the─oftentimes─low quality of the mixed Sn-Pb perovskite films, largely caused by the facile oxidation of Sn(II) to Sn(IV), as well as the difficult-to-control film crystallization dynamics. Additional detrimental imperfections are introduced in the perovskite thin film, particularly at its vulnerable surfaces, including the top and bottom interfaces as well as the grain boundaries. Due to these issues, the resultant device performance is distinctly far lower than their theoretically achievable maximum efficiency. Robust modifications and improvements to the surfaces of mixed Sn-Pb perovskite films are therefore critical for the advancement of the field. This Review describes the origins of imperfections in thin films and covers efforts made so far toward reaching a better understanding of mixed Sn-Pb perovskites, in particular with respect to surface modifications that improved the efficiency and stability of the narrow bandgap solar cells. In addition, we also outline the important issues of integrating the narrow bandgap subcells for achieving reliable and efficient all-perovskite double- and multi-junction tandems. Future work should focus on the characterization and visualization of the specific surface defects, as well as tracking their evolution under different external stimuli, guiding in turn the processing for efficient and stable single-junction and tandem solar cell devices.
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Affiliation(s)
- Shuaifeng Hu
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, United
Kingdom
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Jarla Thiesbrummel
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, United
Kingdom
- Institute
for Physics and Astronomy, University of
Potsdam,14476 Potsdam-Golm, Germany
| | - Jorge Pascual
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
- Polymat, University of the
Basque Country UPV/EHU, 20018 Donostia-San
Sebastian, Spain
| | - Martin Stolterfoht
- Institute
for Physics and Astronomy, University of
Potsdam,14476 Potsdam-Golm, Germany
- Electronic
Engineering Department, The Chinese University
of Hong Kong, Hong Kong 999077, SAR China
| | - Atsushi Wakamiya
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Henry J. Snaith
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, United
Kingdom
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7
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Simenas M, Gagor A, Banys J, Maczka M. Phase Transitions and Dynamics in Mixed Three- and Low-Dimensional Lead Halide Perovskites. Chem Rev 2024; 124:2281-2326. [PMID: 38421808 PMCID: PMC10941198 DOI: 10.1021/acs.chemrev.3c00532] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 12/15/2023] [Accepted: 02/09/2024] [Indexed: 03/02/2024]
Abstract
Lead halide perovskites are extensively investigated as efficient solution-processable materials for photovoltaic applications. The greatest stability and performance of these compounds are achieved by mixing different ions at all three sites of the APbX3 structure. Despite the extensive use of mixed lead halide perovskites in photovoltaic devices, a detailed and systematic understanding of the mixing-induced effects on the structural and dynamic aspects of these materials is still lacking. The goal of this review is to summarize the current state of knowledge on mixing effects on the structural phase transitions, crystal symmetry, cation and lattice dynamics, and phase diagrams of three- and low-dimensional lead halide perovskites. This review analyzes different mixing recipes and ingredients providing a comprehensive picture of mixing effects and their relation to the attractive properties of these materials.
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Affiliation(s)
- Mantas Simenas
- Faculty
of Physics, Vilnius University, Sauletekio 3, LT-10257 Vilnius, Lithuania
| | - Anna Gagor
- Institute
of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, PL-50-422 Wroclaw, Poland
| | - Juras Banys
- Faculty
of Physics, Vilnius University, Sauletekio 3, LT-10257 Vilnius, Lithuania
| | - Miroslaw Maczka
- Institute
of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, PL-50-422 Wroclaw, Poland
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8
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Sun W, Liu S, Wang C, Zu X, Li S, Xiang X. Integration of One-Dimensional (1D) Lead-Free Perovskite Microbelts onto Silicon for Ultraviolet-Visible-Near-Infrared (UV-vis-NIR) Heterojunction Photodetectors. J Phys Chem Lett 2024; 15:2359-2368. [PMID: 38391127 DOI: 10.1021/acs.jpclett.4c00165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/24/2024]
Abstract
Lead-free perovskites are considered to be candidates for next-generation photodetectors, because of their excellent charge carrier transport properties and low toxicity. However, their application in integrated circuits is hindered by their inadequate performance and size restrictions. To aim at the development of lead-free perovskite-integrated optoelectronic devices, a CsAg2I3/silicon (CAI/Si) heterojunction is presented in this work by using a spatial confinement growth method, where the in-plane growth of CAI microbelts with high-quality single-crystal characteristics is primarily dependent on the concentration of surrounding precursor solution. The fabricated photodetectors based on the CAI/Si heterojunctions exhibit a broad-spectrum detection capability in the ultraviolet-visible-near-infrared (UV-vis-NIR) range. In addition, the photodetectors show good photoelectric detection performance, including a maximum responsivity of 48.5 mA/W and detectivity of 1.13 × 1011 Jones, respectively. Besides, the photodetectors have a rapid response of 6.5/224 μs and good air stability for over 2 months. This work contributes a new idea to design next-generation optoelectronic devices with high integration density.
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Affiliation(s)
- Wenfeng Sun
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Shaolong Liu
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Caizheng Wang
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, China
| | - Xiaotao Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Sean Li
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Xia Xiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
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9
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Wang L, Nughays R, Rossi TC, Oppermann M, Ogieglo W, Bian T, Shih CH, Guo TF, Pinnau I, Yin J, Bakr OM, Mohammed OF, Chergui M. Disentangling Thermal from Electronic Contributions in the Spectral Response of Photoexcited Perovskite Materials. J Am Chem Soc 2024; 146:5393-5401. [PMID: 38359303 PMCID: PMC10910496 DOI: 10.1021/jacs.3c12832] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 01/11/2024] [Accepted: 01/25/2024] [Indexed: 02/17/2024]
Abstract
Disentangling electronic and thermal effects in photoexcited perovskite materials is crucial for photovoltaic and optoelectronic applications but remains a challenge due to their intertwined nature in both the time and energy domains. In this study, we employed temperature-dependent variable-angle spectroscopic ellipsometry, density functional theory calculations, and broadband transient absorption spectroscopy spanning the visible to mid-to-deep-ultraviolet (UV) ranges on MAPbBr3 thin films. The use of deep-UV detection opens a new spectral window that enables the exploration of high-energy excitations at various symmetry points within the Brillouin zone, facilitating an understanding of the ultrafast responses of the UV bands and the underlying mechanisms governing them. Our investigation reveals that the photoinduced spectral features remarkably resemble those generated by pure lattice heating, and we disentangle the relative thermal and electronic contributions and their evolutions at different delay times using combinations of decay-associated spectra and temperature-induced differential absorption. The results demonstrate that the photoinduced transients possess a significant thermal origin and cannot be attributed solely to electronic effects. Following photoexcitation, as carriers (electrons and holes) transfer their energy to the lattice, the thermal contribution increases from ∼15% at 1 ps to ∼55% at 500 ps and subsequently decreases to ∼35-50% at 1 ns. These findings elucidate the intricate energy exchange between charge carriers and the lattice in photoexcited perovskite materials and provide insights into the limited utilization efficiency of photogenerated charge carriers.
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Affiliation(s)
- Lijie Wang
- Laboratory
of Ultrafast Spectroscopy, ISIC and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne (EPFL), Lausanne CH-1015, Switzerland
- Advanced
Membranes and Porous Materials Center (AMPM), Division of Physical
Science and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Razan Nughays
- Advanced
Membranes and Porous Materials Center (AMPM), Division of Physical
Science and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Thomas C. Rossi
- Laboratory
of Ultrafast Spectroscopy, ISIC and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne (EPFL), Lausanne CH-1015, Switzerland
| | - Malte Oppermann
- Laboratory
of Ultrafast Spectroscopy, ISIC and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne (EPFL), Lausanne CH-1015, Switzerland
- Department
of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel, Switzerland
| | - Wojciech Ogieglo
- Advanced
Membranes and Porous Materials Center (AMPM), Division of Physical
Science and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Tieyuan Bian
- Department
of Applied Physics, The Hong Kong Polytechnic
University, Kowloon 999077, Hong Kong, P. R. China
| | - Chun-Hua Shih
- Department
of Photonics, National Cheng Kung University, Tainan 701, Taiwan ROC
| | - Tzung-Fang Guo
- Department
of Photonics, National Cheng Kung University, Tainan 701, Taiwan ROC
| | - Ingo Pinnau
- Advanced
Membranes and Porous Materials Center (AMPM), Division of Physical
Science and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Jun Yin
- Department
of Applied Physics, The Hong Kong Polytechnic
University, Kowloon 999077, Hong Kong, P. R. China
| | - Osman M. Bakr
- KAUST
Catalysis Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Omar F. Mohammed
- Advanced
Membranes and Porous Materials Center (AMPM), Division of Physical
Science and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- KAUST
Catalysis Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Majed Chergui
- Laboratory
of Ultrafast Spectroscopy, ISIC and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne (EPFL), Lausanne CH-1015, Switzerland
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10
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Hu S, Tang B, Kershaw SV, Kotov NA, Andrey R. Temperature Dependence of Charge Transport Properties of Quasi-2D Chiral Perovskite Thin-Film Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38412377 DOI: 10.1021/acsami.3c19200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/29/2024]
Abstract
Chiral halide perovskite materials promise both superior light response and the capability to distinguish circularly polarized emissions, which are especially common in the fluorescence spectra of organic chiral materials. Herein, thin-film field-effect transistors (FETs) based on chiral quasi-two-dimensional perovskites are explored, and the temperature dependence of the charge carrier transport mechanism over the broad temperature range (80-300 K) is revealed. A typical p-type charge transport behavior is observed for both left-handed (S-C6H5(CN2)2NH3)2(CH3NH3)n-1PbnI3n+1 and right-handed (R-C6H5(CN2)2NH3)2(CH3NH3)n-1PbnI3n+1 chiral perovskites, with maximum carrier mobilities of 1.7 × 10-5 cm2 V-1 s-1 and 2.5 × 10-5 cm2 V-1 s-1 at around 280 K, respectively. The shallow traps with smaller activation energy (0.03 eV) hinder the carrier transport over the lower temperature regime (80-180 K), while deep traps with 1 order of magnitude larger activation energy than the shallow traps moderate the charge carrier transport in the temperature range of 180-300 K. From the charge carrier mechanism point of view, impurity scattering is established as the dominant factor from 80 K until around 280 K, while phonon scattering becomes predominant up to room temperature. Responsivities of 0.15 A W-1 and 0.14 A W-1 for left-handed and right-handed chiral perovskite FET devices are obtained.
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Affiliation(s)
- Sile Hu
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong, S.A.R. 999077, PR China
| | - Bing Tang
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong, S.A.R. 999077, PR China
| | - Stephen V Kershaw
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong, S.A.R. 999077, PR China
| | - Nicholas A Kotov
- Biointerfaces Institute, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Rogach Andrey
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong, S.A.R. 999077, PR China
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11
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He B, Kuang K, Tong G, Tang J, Cao S, Yu Z, Li M, He Y, Chen J. Halide Ordering Enables Superior Charge Transport in 3D (NMPDA)Pb 2 I 4 Br 2 Perovskitoid Single Crystal. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305990. [PMID: 37821401 DOI: 10.1002/smll.202305990] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 09/09/2023] [Indexed: 10/13/2023]
Abstract
Halide composition engineering has been demonstrated as an effective strategy for optical and electronic properties modulation in 3D perovskites. While the impact of halide mixing on the structural and charge transport properties of 3D perovskitoids remains largely unexplored. Herein, it is demonstrated that bromine (Br) mixing in 3D (NMPDA)Pb2 I6 (NMPDA = N-methyl-1,3-propane diammonium) perovskitoid yields stabilized (NMPDA)Pb2 I4 Br2 with specific ordered halide sites, where Br ions locate at the edge-sharing sites. The halide ordered structure enables stronger H-bonds, shorter interlayer distance, and lower octahedra distortion in (NMPDA)Pb2 I4 Br2 with respect to the pristine (NMPDA)Pb2 I6 . These attributes further result in high ion migration activation energy, low defect states density, and enhanced carrier mobility-lifetime product (µτ), as underpinned by the electrical properties investigation and DFT calculations. Remarkably, the parallel configured photodetector based on (NMPDA)Pb2 I4 Br2 single crystal delivers a high on/off current ratio of 3.92 × 103 , a satisfying photoresponsivity and detectivity of 0.28 A W-1 and 3.05 × 1012 Jones under 10.94 µW cm-2 irradiation, superior to that of (NMPDA)Pb2 I6 and the reported 3D perovskitoids. This work sheds novel insight on exploring 3D mixed halide perovskitoids toward advanced and stable optoelectronic devices.
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Affiliation(s)
- Biqi He
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Kuan Kuang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Guoliang Tong
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Junjie Tang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Sheng Cao
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Zixian Yu
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Mingkai Li
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Yunbin He
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Junnian Chen
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
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12
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He D, Chen P, Hao M, Lyu M, Wang Z, Ding S, Lin T, Zhang C, Wu X, Moore E, Steele JA, Namdas EB, Bai Y, Wang L. Accelerated Redox Reactions Enable Stable Tin-Lead Mixed Perovskite Solar Cells. Angew Chem Int Ed Engl 2024; 63:e202317446. [PMID: 38030582 DOI: 10.1002/anie.202317446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Revised: 11/27/2023] [Accepted: 11/29/2023] [Indexed: 12/01/2023]
Abstract
The facile oxidation of Sn2+ to Sn4+ poses an inherent challenge that limits the efficiency and stability of tin-lead mixed (Sn-Pb) perovskite solar cells (PSCs) and all-perovskite tandem devices. In this work, we discover the sustainable redox reactions enabling self-healing Sn-Pb perovskites, where their intractable oxidation degradation can be recovered to their original state under light soaking. Quantitative and operando spectroscopies are used to investigate the redox chemistry, revealing that metallic Pb0 from the photolysis of perovskite reacts with Sn4+ to regenerate Pb2+ and Sn2+ spontaneously. Given the sluggish redox reaction kinetics, V3+ /V2+ ionic pair is designed as an effective redox shuttle to accelerate the recovery of Sn-Pb perovskites from oxidation. The target Sn-Pb PSCs enabled by V3+ /V2+ ionic pair deliver an improved power conversion efficiency (PCE) of 21.22 % and excellent device lifespan, retaining nearly 90 % of its initial PCE after maximum power point tracking under light for 1,000 hours.
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Affiliation(s)
- Dongxu He
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Peng Chen
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Mengmeng Hao
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Miaoqiang Lyu
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Zhiliang Wang
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Shanshan Ding
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Tongen Lin
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Chengxi Zhang
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Xin Wu
- School of Chemistry and Molecular Biosciences, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Evan Moore
- School of Chemistry and Molecular Biosciences, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Julian A Steele
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
- School of Mathematics and Physics, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Ebinazar B Namdas
- School of Mathematics and Physics, The University of Queensland, St Lucia, 4072, Queensland, Australia
| | - Yang Bai
- Faculty of Materials Science and Energy Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, 518055, Shenzhen, Guangdong, China
- Shenzhen Key Laboratory of Energy Materials for Carbon Neutrality, 518055, Shenzhen, Guangdong, China
| | - Lianzhou Wang
- School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, 4072, Queensland, Australia
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13
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Musiienko A, Yang F, Gries TW, Frasca C, Friedrich D, Al-Ashouri A, Sağlamkaya E, Lang F, Kojda D, Huang YT, Stacchini V, Hoye RLZ, Ahmadi M, Kanak A, Abate A. Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport. Nat Commun 2024; 15:316. [PMID: 38182589 PMCID: PMC10770130 DOI: 10.1038/s41467-023-44418-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Accepted: 12/13/2023] [Indexed: 01/07/2024] Open
Abstract
The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material's effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10-3 to 103 cm2V-1s-1 and lifetimes varying between 10-9 and 10-3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.
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Affiliation(s)
- Artem Musiienko
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany.
| | - Fengjiu Yang
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
- Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Thomas William Gries
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
- Department of Chemistry, University of Bielefeld, Bielefeld, Germany
| | - Chiara Frasca
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
- Department of Chemistry, University of Bielefeld, Bielefeld, Germany
| | - Dennis Friedrich
- Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, Germany
| | - Amran Al-Ashouri
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
| | - Elifnaz Sağlamkaya
- Disordered Semiconductor Optoelectronics, Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24-25, 14476, Potsdam-Golm, Germany
| | - Felix Lang
- ROSI Freigeist Juniorgroup, Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24-25, 14476, Potsdam-Golm, Germany
| | - Danny Kojda
- Department Dynamics and Transport in Quantum Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, Germany
| | - Yi-Teng Huang
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, UK
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK
| | - Valerio Stacchini
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
| | - Robert L Z Hoye
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK
| | - Mahshid Ahmadi
- Institute for Advanced Materials and Manufacturing, Department of Materials Science and Engineering, The University of Tennessee Knoxville, Knoxville, TN, 37996, USA
| | - Andrii Kanak
- Laboratory of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich, Switzerland
- Department of General Chemistry and Chemistry of Materials, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine
| | - Antonio Abate
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
- Department of Chemistry, University of Bielefeld, Bielefeld, Germany
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14
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Yang S, Wen J, Wu Y, Zhu H, Liu A, Hu Y, Noh YY, Chu J, Li W. Unlocking the Potential of Tin-Based Perovskites: Properties, Progress, and Applications in New-Era Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304626. [PMID: 37641178 DOI: 10.1002/smll.202304626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Revised: 08/10/2023] [Indexed: 08/31/2023]
Abstract
Electronics have greatly promoted the development of modern society and the exploration of new semiconducting materials with low cost and high mobility continues to attract interest in the advance of next-generation electronic devices. Among emerging semiconductors, the metal-halide perovskite, especially the nontoxic tin (Sn)-based candidates, has recently made breakthroughs in the field of diverse electronic devices due to its excellent charge transport properties and cost-effective large-area deposition capability at low temperatures. To enable a more comprehensive understanding of this emerging research field and promote the development of new-generation perovskite electronics, this review aims to provide an in-depth understanding with the discussion of unique physical properties of Sn-based perovskites and the summarization of recent research progress of Sn-based perovskite field-effect transistors (FETs) and diverse electronic devices. The unique character of negligible ion migration is also discussed, which is fundamentally different from the lead-based counterparts and provides a great prerequisite for device application. The following section highlights the potential broad applications of Sn-perovskite FETs as a competitive and feasible technology. Finally, an outlook and remaining challenges are given to advance the progression of Sn-based perovskite FETs, especially on the origin and solution of stability problems toward high-performance Sn-based perovskite electronics.
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Affiliation(s)
- Shuzhang Yang
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Jincheng Wen
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Yanqiu Wu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Huihui Zhu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Ao Liu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Junhao Chu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
| | - Wenwu Li
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
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15
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Qiu X, Xia J, Liu Y, Chen PA, Huang L, Wei H, Ding J, Gong Z, Zeng X, Peng C, Chen C, Wang X, Jiang L, Liao L, Hu Y. Ambient-Stable 2D Dion-Jacobson Phase Tin Halide Perovskite Field-Effect Transistors with Mobility over 1.6 Cm 2 V -1 s -1. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2305648. [PMID: 37603829 DOI: 10.1002/adma.202305648] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 08/10/2023] [Indexed: 08/23/2023]
Abstract
Solution-processed metal halide perovskites hold immense potential for the advancement of next-generation field-effect transistors (FETs). However, the instability of perovskite-based transistors has impeded their progress and practical applications. Here, ambient-stable high-performance FETs based on 2D Dion-Jacobson phase tin halide perovskite BDASnI4 , which has high film quality and excellent electrical properties, are reported. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH4 SCN additives within the precursor solution. The refined FETs demonstrate field-effect hole mobilities up to 1.61 cm2 V-1 s-1 and an on/off ratio surpassing 106 . Moreover, the devices show impressive operational and environmental stability and retain their functional performance even after being exposed to ambient conditions with a temperature of 45 °C and humidity of 45% for over 150 h.
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Affiliation(s)
- Xincan Qiu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Key Laboratory of Hunan Province for 3D Scene Visualization and Intelligence Education (2023TP1038), School of Electronic Information, Hunan First Normal University, Changsha, 410205, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiangnan Xia
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yu Liu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Ping-An Chen
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Lanyu Huang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Huan Wei
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiaqi Ding
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhenqi Gong
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xi Zeng
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Chengyuan Peng
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Chen Chen
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Xiao Wang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
| | - Lei Liao
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
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16
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Zhou Z, Li Q, Chen M, Zheng X, Wu X, Lu X, Tao S, Zhao N. High-Mobility and Bias-Stable Field-Effect Transistors Based on Lead-Free Formamidinium Tin Iodide Perovskites. ACS ENERGY LETTERS 2023; 8:4496-4505. [PMID: 37854050 PMCID: PMC10580314 DOI: 10.1021/acsenergylett.3c01400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 09/26/2023] [Indexed: 10/20/2023]
Abstract
Electronic devices based on tin halide perovskites often exhibit a poor operational stability. Here, we report an additive engineering strategy to realize high-performance and stable field-effect transistors (FETs) based on 3D formamidinium tin iodide (FASnI3) films. By comparatively studying the modification effects of two additives, i.e., phenethylammonium iodide and 4-fluorophenylethylammonium iodide via combined experimental and theoretical investigations, we unambiguously point out the general effects of phenethylammonium (PEA) and its fluorinated derivative (FPEA) in enhancing crystallization of FASnI3 films and the unique role of fluorination in reducing structural defects, suppressing oxidation of Sn2+ and blocking oxygen and water involved defect reactions. The optimized FPEA-modified FASnI3 FETs reach a record high field-effect mobility of 15.1 cm2/(V·s) while showing negligible hysteresis. The devices exhibit less than 10% and 3% current variation during over 2 h continuous bias stressing and 4200-cycle switching test, respectively, representing the best stability achieved so far for all Sn-based FETs.
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Affiliation(s)
- Zhiwen Zhou
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Qihua Li
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Mojun Chen
- Smart
Manufacturing Thrust, Systems Hub, The Hong
Kong University of Science and Technology, Guangzhou 511458, China
| | - Xuerong Zheng
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Xiao Wu
- Department
of Physics, The Chinese University of Hong
Kong, Shatin 999077, Hong Kong SAR, China
| | - Xinhui Lu
- Department
of Physics, The Chinese University of Hong
Kong, Shatin 999077, Hong Kong SAR, China
| | - Shuxia Tao
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Ni Zhao
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
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17
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Wu Y, Li Z, Lei Y, Jin Z. Metal-Free Perovskites for X-Ray Detection. Chemistry 2023; 29:e202301536. [PMID: 37427493 DOI: 10.1002/chem.202301536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 07/07/2023] [Accepted: 07/08/2023] [Indexed: 07/11/2023]
Abstract
Metal-free perovskites are a promising class of materials for X-ray detection due to their unique structural, optical, and electrical properties. Here, we first delve into the stoichiometry and geometric argument of metal-free perovskites. Followed, the alternative A/B/X ions and hydrogen-bonding are clearly introduced to further optimize the materials' stability and properties. Finally, we provide a comprehensive overview of their potential applications for flexible X-ray images and prospects for metal-free perovskite development. In conclusion, metal-free perovskite is a promising material for X-ray detection. Its stoichiometric and geometric parameters, ion, and hydrogen bond selection, and application prospects are worthy of further study.
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Affiliation(s)
- Yujiang Wu
- School of Materials and Energy School of Physical Science and Technolog Lanzhou Center for Theoretical Physics Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, China
| | - Zhizai Li
- School of Materials and Energy School of Physical Science and Technolog Lanzhou Center for Theoretical Physics Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, China
| | - Yutian Lei
- School of Materials and Energy School of Physical Science and Technolog Lanzhou Center for Theoretical Physics Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, China
| | - Zhiwen Jin
- School of Materials and Energy School of Physical Science and Technolog Lanzhou Center for Theoretical Physics Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, China
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18
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He B, Kuang K, Xu B, Tang J, Cao S, Yu Z, Li M, He Y, Chen J. Broadband red emission from one-dimensional hexamethonium lead bromide perovskitoid. Chem Commun (Camb) 2023; 59:11795-11798. [PMID: 37706286 DOI: 10.1039/d3cc03477a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
Broadband emissions from low-dimensional hybrid perovskites have aroused intense interest. However, the achievement of broadband red emission in lead halide perovskites remains challenging. Herein, we report a one-dimensional (1D) hybrid lead bromide perovskitoid, (HM)Pb2Br6 (HM = hexamethonium), featuring a corrugated "3 × 3" [Pb2Br6]2- chain. The unique structure results in intriguingly red emission peaking at 692 nm, with a PLQY of around 6.24%. Our spectroscopic and computational studies reveal that the red emission derives from self-localized Pb23+, Pb3+ and Br2- species confined within the inorganic lead bromide lattice that function as radiative centres. This finding will benefit the design of perovskite systems for efficient red emission.
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Affiliation(s)
- Biqi He
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Kuan Kuang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Bing Xu
- Lingnan Normal University, Zhanjiang, 524048, China
| | - Junjie Tang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Sheng Cao
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Zixian Yu
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Mingkai Li
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Yunbin He
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Junnian Chen
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
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19
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Hu S, Smith JA, Snaith HJ, Wakamiya A. Prospects for Tin-Containing Halide Perovskite Photovoltaics. PRECISION CHEMISTRY 2023; 1:69-82. [PMID: 37124243 PMCID: PMC10131267 DOI: 10.1021/prechem.3c00018] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/08/2023] [Revised: 03/14/2023] [Accepted: 04/03/2023] [Indexed: 05/02/2023]
Abstract
Tin-containing metal halide perovskites have enormous potential as photovoltaics, both in narrow band gap mixed tin-lead materials for all-perovskite tandems and for lead-free perovskites. The introduction of Sn(II), however, has significant effects on the solution chemistry, crystallization, defect states, and other material properties in halide perovskites. In this perspective, we summarize the main hurdles for tin-containing perovskites and highlight successful attempts made by the community to overcome them. We discuss important research directions for the development of these materials and propose some approaches to achieve a unified understanding of Sn incorporation. We particularly focus on the discussion of charge carrier dynamics and nonradiative losses at the interfaces between perovskite and charge extraction layers in p-i-n cells. We hope these insights will aid the community to accelerate the development of high-performance, stable single-junction tin-containing perovskite solar cells and all-perovskite tandems.
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Affiliation(s)
- Shuaifeng Hu
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
- (S.H.)
| | - Joel A. Smith
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, U.K.
- (J.A.S.)
| | - Henry J. Snaith
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, U.K.
- (H.J.S.)
| | - Atsushi Wakamiya
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
- (A.W.)
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