1
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Romero MR, Bracamonte AG. Optical Active Meta-Surfaces, -Substrates, and Single Quantum Dots Based on Tuning Organic Composites with Graphene. MATERIALS (BASEL, SWITZERLAND) 2024; 17:3242. [PMID: 38998324 PMCID: PMC11242519 DOI: 10.3390/ma17133242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2024] [Revised: 06/24/2024] [Accepted: 06/28/2024] [Indexed: 07/14/2024]
Abstract
In this communication, the design and fabrication of optical active metamaterials were developed by the incorporation of graphene and joining it to different substrates with variable spectroscopical properties. It focuses on how graphene and its derivatives could generate varied optical setups and materials considering modified and enhanced optics within substrates and surfaces. In this manner, it is discussed how light could be tuned and modified along its path from confined nano-patterned surfaces or through a modified micro-lens. In addition to these optical properties generated from the physical interaction of light, it should be added that the non-classical light pathways and quantum phenomena could participate. In this way, graphene and related carbon-based materials with particular properties, such as highly condensed electronics, pseudo-electromagnetic properties, and quantum and luminescent properties, could be incorporated. Therefore, the modified substrates could be switched by photo-stimulation with variable responses depending on the nature of the material constitution. Therefore, the optical properties of graphene and its derivatives are discussed in these types of metasurfaces with targeted optical active properties, such as within the UV, IR, and terahertz wavelength intervals, along with their further properties and respective potential applications.
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Affiliation(s)
- Marcelo R. Romero
- Departamento de Química Orgánica, Facultad de Ciencias Químicas (Universidad Nacional de Córdoba), IPQA−CONICET, Córdoba CP 5000, Argentina;
| | - A. Guillermo Bracamonte
- Departamento de Química Orgánica, Facultad de Ciencias Químicas, Instituto de Investigaciones en Físicoquímica de Córdoba (INFIQC), Universidad Nacional de Córdoba, Ciudad Universitaria, Córdoba CP 5000, Argentina
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2
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Zheng JP, Zheng LY, Yu SY, Yang SL, Sun XC, Liu L, Lu MH, Chen YF, Christensen J. Focusing Micromechanical Polaritons in Topologically Nontrivial Hyperbolic Metasurfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311599. [PMID: 38374796 DOI: 10.1002/adma.202311599] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 01/25/2024] [Indexed: 02/21/2024]
Abstract
Vertically stacked multiple atomically thin layers have recently widened the landscape of rich optical structures thanks to these quantum metamaterials or van der Waals (vdW) materials, featuring hyperbolic polaritons with unprecedented avenues for light. Despite their far-reaching implications, most of their properties rest entirely on a trivial band topological origin. Here, a 2D approach is adopted toward a micromechanical vdW analogue that, as a result of engineered chiral and mirror symmetries, provides topologically resilient hyperbolic radiation of mechanical vibrations in the ultrasonic regime. By applying laser vibrometry of the micrometer-sized metasurface, we are able to exhibit the exotic fingerprints of robust hyperbolic radiation spanning several frequencies, which beyond their physical relevance, may enable ultrasonic technologies.
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Affiliation(s)
- Jiang-Po Zheng
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Li-Yang Zheng
- School of Science, Shenzhen Campus of Sun Yat-sen University, Shenzhen, 518107, China
- Department of Physics, Universidad Carlos III de Madrid, Leganès, Madrid, ES-28916, Spain
| | - Si-Yuan Yu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China
| | - Shi-Li Yang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xiao-Chen Sun
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
| | - Le Liu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Ming-Hui Lu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China
| | - Yan-Feng Chen
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China
| | - Johan Christensen
- IMDEA Materials Institute, Calle Eric Kandel, 2, Getafe, Madrid, 28906, Spain
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3
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Suzuki R, Abe M, Kojima K, Tachibana M. Unraveling Polymorphism and Twisting in Near-Perfect Protein Crystals. J Phys Chem Lett 2024; 15:4031-4039. [PMID: 38578059 DOI: 10.1021/acs.jpclett.4c00319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/06/2024]
Abstract
Crystals ideally have well-formed shapes and periodic arrangements of constituent components, such as atoms and molecules. Twisting, an unconventional crystal morphology, presents itself as a puzzling and natural phenomenon. The coexistence of a continuous twisting structure and crystalline order poses a paradox. Numerous mechanisms to explain twisting have been proposed, and the elucidation of the underlying causes of spontaneous nonlong-range translational order twisting in crystals has been desired. Here, we demonstrate twisting and perfect crystals controlled by the crystal polymorphs of macromolecular crystals. We establish that the presence of either a perfectly periodic crystalline arrangement or twisting is linked to anisotropic interactions arising from salt bridges among protein molecules. Employing the dynamical theory of X-ray diffraction, we discern that twisting serves as an imperfection that cannot be attributed to conventional crystal defects within crystals. These insights suggest the origin of crystal twisting and methods for controlling crystal perfection.
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Affiliation(s)
- Ryo Suzuki
- Graduate School of Nanobioscience, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
| | - Marina Abe
- Graduate School of Nanobioscience, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
| | - Kenichi Kojima
- Graduate School of Nanobioscience, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
| | - Masaru Tachibana
- Graduate School of Nanobioscience, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
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Moradifar P, Liu Y, Shi J, Siukola Thurston ML, Utzat H, van Driel TB, Lindenberg AM, Dionne JA. Accelerating Quantum Materials Development with Advances in Transmission Electron Microscopy. Chem Rev 2023. [PMID: 37979189 DOI: 10.1021/acs.chemrev.2c00917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2023]
Abstract
Quantum materials are driving a technology revolution in sensing, communication, and computing, while simultaneously testing many core theories of the past century. Materials such as topological insulators, complex oxides, superconductors, quantum dots, color center-hosting semiconductors, and other types of strongly correlated materials can exhibit exotic properties such as edge conductivity, multiferroicity, magnetoresistance, superconductivity, single photon emission, and optical-spin locking. These emergent properties arise and depend strongly on the material's detailed atomic-scale structure, including atomic defects, dopants, and lattice stacking. In this review, we describe how progress in the field of electron microscopy (EM), including in situ and in operando EM, can accelerate advances in quantum materials and quantum excitations. We begin by describing fundamental EM principles and operation modes. We then discuss various EM methods such as (i) EM spectroscopies, including electron energy loss spectroscopy (EELS), cathodoluminescence (CL), and electron energy gain spectroscopy (EEGS); (ii) four-dimensional scanning transmission electron microscopy (4D-STEM); (iii) dynamic and ultrafast EM (UEM); (iv) complementary ultrafast spectroscopies (UED, XFEL); and (v) atomic electron tomography (AET). We describe how these methods could inform structure-function relations in quantum materials down to the picometer scale and femtosecond time resolution, and how they enable precision positioning of atomic defects and high-resolution manipulation of quantum materials. For each method, we also describe existing limitations to solve open quantum mechanical questions, and how they might be addressed to accelerate progress. Among numerous notable results, our review highlights how EM is enabling identification of the 3D structure of quantum defects; measuring reversible and metastable dynamics of quantum excitations; mapping exciton states and single photon emission; measuring nanoscale thermal transport and coupled excitation dynamics; and measuring the internal electric field and charge density distribution of quantum heterointerfaces- all at the quantum materials' intrinsic atomic and near atomic-length scale. We conclude by describing open challenges for the future, including achieving stable sample holders for ultralow temperature (below 10K) atomic-scale spatial resolution, stable spectrometers that enable meV energy resolution, and high-resolution, dynamic mapping of magnetic and spin fields. With atomic manipulation and ultrafast characterization enabled by EM, quantum materials will be poised to integrate into many of the sustainable and energy-efficient technologies needed for the 21st century.
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Affiliation(s)
- Parivash Moradifar
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Yin Liu
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Jiaojian Shi
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, 2575 Sand Hill Road MS69, Menlo Park, California 94025, United States
| | | | - Hendrik Utzat
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Chemistry, University of California Berkeley, Berkeley, California 94720, United States
| | - Tim B van Driel
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, 2575 Sand Hill Road MS69, Menlo Park, California 94025, United States
| | - Jennifer A Dionne
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Radiology, Stanford University, Stanford, California 94305, United States
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5
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Nguyen DP, Arwas G, Lin Z, Yao W, Ciuti C. Electron-Photon Chern Number in Cavity-Embedded 2D Moiré Materials. PHYSICAL REVIEW LETTERS 2023; 131:176602. [PMID: 37955506 DOI: 10.1103/physrevlett.131.176602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Revised: 09/11/2023] [Accepted: 09/25/2023] [Indexed: 11/14/2023]
Abstract
We explore theoretically how the topological properties of 2D materials can be manipulated by cavity quantum electromagnetic fields for both resonant and off-resonant electron-photon coupling, with a focus on van der Waals moiré superlattices. We investigate an electron-photon topological Chern number for the cavity-dressed energy minibands that is well defined for any degree of hybridization and entanglement of the electron and photon states. While an off-resonant cavity mode can renormalize electronic topological phases that exist without cavity coupling, we show that when the cavity mode is resonant to electronic miniband transitions, new and higher electron-photon Chern numbers can emerge.
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Affiliation(s)
- Danh-Phuong Nguyen
- Université Paris Cité, CNRS, Matériaux et Phénomènes Quantiques, 75013 Paris, France
| | - Geva Arwas
- Université Paris Cité, CNRS, Matériaux et Phénomènes Quantiques, 75013 Paris, France
| | - Zuzhang Lin
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, China
| | - Wang Yao
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, China
| | - Cristiano Ciuti
- Université Paris Cité, CNRS, Matériaux et Phénomènes Quantiques, 75013 Paris, France
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6
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Naito H, Makino Y, Zhang W, Ogawa T, Endo T, Sannomiya T, Kaneda M, Hashimoto K, Lim HE, Nakanishi Y, Watanabe K, Taniguchi T, Matsuda K, Miyata Y. High-throughput dry transfer and excitonic properties of twisted bilayers based on CVD-grown transition metal dichalcogenides. NANOSCALE ADVANCES 2023; 5:5115-5121. [PMID: 37705802 PMCID: PMC10496764 DOI: 10.1039/d3na00371j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Accepted: 08/21/2023] [Indexed: 09/15/2023]
Abstract
van der Waals (vdW) layered materials have attracted much attention because their physical properties can be controlled by varying the twist angle and layer composition. However, such twisted vdW assemblies are often prepared using mechanically exfoliated monolayer flakes with unintended shapes through a time-consuming search for such materials. Here, we report the rapid and dry fabrication of twisted multilayers using chemical vapor deposition (CVD) grown transition metal chalcogenide (TMDC) monolayers. By improving the adhesion of an acrylic resin stamp to the monolayers, the single crystals of various TMDC monolayers with desired grain size and density on a SiO2/Si substrate can be efficiently picked up. The present dry transfer process demonstrates the one-step fabrication of more than 100 twisted bilayers and the sequential stacking of a twisted 10-layer MoS2 single crystal. Furthermore, we also fabricated hBN-encapsulated TMDC monolayers and various twisted bilayers including MoSe2/MoS2, MoSe2/WSe2, and MoSe2/WS2. The interlayer interaction and quality of dry-transferred, CVD-grown TMDCs were characterized by using photoluminescence (PL), cathodoluminescence (CL) spectroscopy, and cross-sectional electron microscopy. The prominent PL peaks of interlayer excitons can be observed for MoSe2/MoS2 and MoSe2/WSe2 with small twist angles at room temperature. We also found that the optical spectra were locally modulated due to nanosized bubbles, which are formed by the presence of interface carbon impurities. The present findings indicate the widely applicable potential of the present method and enable an efficient search of the emergent optical and electrical properties of TMDC-based vdW heterostructures.
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Affiliation(s)
- Hibiki Naito
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Yasuyuki Makino
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Wenjin Zhang
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Tomoya Ogawa
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Takumi Sannomiya
- Department of Materials Science and Engineering, Tokyo Institute of Technology Yokohama 226-8503 Japan
| | - Masahiko Kaneda
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Kazuki Hashimoto
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Hong En Lim
- Department of Chemistry, Saitama University Saitama 338-8570 Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, NIMS Tsukuba 305-0044 Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, NIMS Tsukuba 305-0044 Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy, Kyoto University Kyoto 611-0011 Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
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7
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Xu N, Shi L, Pei X, Zhang W, Chen J, Han Z, Samorì P, Wang J, Wang P, Shi Y, Li S. Oxidation kinetics and non-Marcusian charge transfer in dimensionally confined semiconductors. Nat Commun 2023; 14:4074. [PMID: 37429836 DOI: 10.1038/s41467-023-39781-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2022] [Accepted: 06/27/2023] [Indexed: 07/12/2023] Open
Abstract
Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substances can be well described by the classical Marcus-Gerischer charge transfer theory, the realistic reaction character and mechanism in dimensionally confined systems remain unknown. Here, we report the multiparametric survey on the kinetics of lateral photooxidation in structurally identical WS2 and MoS2 monolayers, where electrochemical oxidation occurs at the atomically thin monolayer edges. The oxidation rate is correlated quantitatively with various crystallographic and environmental parameters, including the density of reactive sites, humidity, temperature, and illumination fluence. In particular, we observe distinctive reaction barriers of 1.4 and 0.9 eV for the two structurally identical semiconductors and uncover an unusual non-Marcusian charge transfer mechanism in these dimensionally confined monolayers due to the limit in reactant supplies. A scenario of band bending is proposed to explain the discrepancy in reaction barriers. These results add important knowledge into the fundamental electrochemical reaction theory in low-dimensional systems.
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Affiliation(s)
- Ning Xu
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Li Shi
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xudong Pei
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210023, China
| | - Weiyang Zhang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210023, China
| | - Jian Chen
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Zheng Han
- Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, China
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000, Strasbourg, France
| | - Jinlan Wang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China.
- Suzhou Laboratory, Suzhou, 215125, China.
| | - Peng Wang
- Department of Physics, University of Warwick, CV4 7AL, Coventry, UK.
| | - Yi Shi
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China.
| | - Songlin Li
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China.
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8
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Shi X, Kurman Y, Shentcis M, Wong LJ, García de Abajo FJ, Kaminer I. Free-electron interactions with van der Waals heterostructures: a source of focused X-ray radiation. LIGHT, SCIENCE & APPLICATIONS 2023; 12:148. [PMID: 37321995 DOI: 10.1038/s41377-023-01141-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 03/06/2023] [Accepted: 03/30/2023] [Indexed: 06/17/2023]
Abstract
The science and technology of X-ray optics have come far, enabling the focusing of X-rays for applications in high-resolution X-ray spectroscopy, imaging, and irradiation. In spite of this, many forms of tailoring waves that had substantial impact on applications in the optical regime have remained out of reach in the X-ray regime. This disparity fundamentally arises from the tendency of refractive indices of all materials to approach unity at high frequencies, making X-ray-optical components such as lenses and mirrors much harder to create and often less efficient. Here, we propose a new concept for X-ray focusing based on inducing a curved wavefront into the X-ray generation process, resulting in the intrinsic focusing of X-ray waves. This concept can be seen as effectively integrating the optics to be part of the emission mechanism, thus bypassing the efficiency limits imposed by X-ray optical components, enabling the creation of nanobeams with nanoscale focal spot sizes and micrometer-scale focal lengths. Specifically, we implement this concept by designing aperiodic vdW heterostructures that shape X-rays when driven by free electrons. The parameters of the focused hotspot, such as lateral size and focal depth, are tunable as a function of an interlayer spacing chirp and electron energy. Looking forward, ongoing advances in the creation of many-layer vdW heterostructures open unprecedented horizons of focusing and arbitrary shaping of X-ray nanobeams.
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Affiliation(s)
- Xihang Shi
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Yaniv Kurman
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Michael Shentcis
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Liang Jie Wong
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - F Javier García de Abajo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, Barcelona, 08010, Spain
| | - Ido Kaminer
- Solid State Institute and Faculty of Electrical and Computer Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel.
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9
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Faria Junior PE, Fabian J. Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe 2/WSe 2 Heterobilayers: From Energy Bands to Dipolar Excitons. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1187. [PMID: 37049281 PMCID: PMC10096971 DOI: 10.3390/nano13071187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 03/22/2023] [Accepted: 03/24/2023] [Indexed: 06/19/2023]
Abstract
Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these excitonic complexes exhibit pronounced valley Zeeman signatures, but how their spin-valley physics can be further altered due to external parameters-such as electric field and interlayer separation-remains largely unexplored. Here, we perform a systematic analysis of the spin-valley physics in MoSe2/WSe2 heterobilayers under the influence of an external electric field and changes of the interlayer separation. In particular, we analyze the spin (Sz) and orbital (Lz) degrees of freedom, and the symmetry properties of the relevant band edges (at K, Q, and Γ points) of high-symmetry stackings at 0° (R-type) and 60° (H-type) angles-the important building blocks present in moiré or atomically reconstructed structures. We reveal distinct hybridization signatures on the spin and the orbital degrees of freedom of low-energy bands, due to the wave function mixing between the layers, which are stacking-dependent, and can be further modified by electric field and interlayer distance variation. We find that H-type stackings favor large changes in the g-factors as a function of the electric field, e.g., from -5 to 3 in the valence bands of the Hhh stacking, because of the opposite orientation of Sz and Lz of the individual monolayers. For the low-energy dipolar excitons (direct and indirect in k-space), we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. Furthermore, our results show that direct dipolar excitons carry a robust valley Zeeman effect nearly independent of the electric field, but tunable by the interlayer distance, which can be rendered experimentally accessible via applied external pressure. For the momentum-indirect dipolar excitons, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. In particular, for the indirect excitons with conduction bands at the Q point for H-type stackings, we find marked variations of the valley Zeeman (∼4) as a function of the electric field, which notably stands out from the other dipolar exciton species. Our analysis suggests that stronger signatures of the coupled spin-valley physics are favored in H-type stackings, which can be experimentally investigated in samples with twist angle close to 60°. In summary, our study provides fundamental microscopic insights into the spin-valley physics of van der Waals heterostructures, which are relevant to understanding the valley Zeeman splitting of dipolar excitonic complexes, and also intralayer excitons.
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10
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Lv X, Pei K, Yang C, Qin G, Liu M, Zhang J, Che R. Controllable Topological Magnetic Transformations in the Thickness-Tunable van der Waals Ferromagnet Fe 5GeTe 2. ACS NANO 2022; 16:19319-19327. [PMID: 36349969 DOI: 10.1021/acsnano.2c08844] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Recent observations of topological meron textures in two-dimensional (2D) van der Waals (vdW) magnetic materials have attracted considerable research interest for both fundamental physics and spintronic applications. However, manipulating the meron textures and realizing the topological transformations, which allow for exploring emergent electromagnetic behaviors, remain largely unexplored in 2D magnets. In this work, utilizing real-space imaging and micromagnetic simulations, we reveal temperature- and thickness-dependent topological magnetic transformations among domain walls, meron textures, and stripe domain in Fe5GeTe2 (FGT) lamellae. The key mechanism of the magnetic transformations can be attributed to the temperature-induced change of exchange stiffness constant within layers and uniaxial magnetic anisotropy, while the magnetic dipole interaction as governed by sample thickness is crucial to affect the critical transformation temperature and stripe period. Our findings provide reliable insights into the origin and manipulation of topological spin textures in 2D vdW ferromagnets.
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Affiliation(s)
- Xiaowei Lv
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, School of Microelectronics, Fudan University, Shanghai200438, People's Republic of China
| | - Ke Pei
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, School of Microelectronics, Fudan University, Shanghai200438, People's Republic of China
| | - Chendi Yang
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, School of Microelectronics, Fudan University, Shanghai200438, People's Republic of China
| | - Gang Qin
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, School of Microelectronics, Fudan University, Shanghai200438, People's Republic of China
| | - Min Liu
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, School of Microelectronics, Fudan University, Shanghai200438, People's Republic of China
| | - Jincang Zhang
- Zhejiang Laboratory, Hangzhou311100, People's Republic of China
| | - Renchao Che
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, School of Microelectronics, Fudan University, Shanghai200438, People's Republic of China
- Zhejiang Laboratory, Hangzhou311100, People's Republic of China
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11
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Zhang X, Zhang Y, Yu H, Zhao H, Cao Z, Zhang Z, Zhang Y. Van der Waals-Interface-Dominated All-2D Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2207966. [PMID: 36353883 DOI: 10.1002/adma.202207966] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 11/06/2022] [Indexed: 06/16/2023]
Abstract
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
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Affiliation(s)
- Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yanzhe Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Hang Zhao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhihong Cao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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12
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Ji J, Choi JH. Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields. NANOSCALE 2022; 14:10648-10689. [PMID: 35839069 DOI: 10.1039/d2nr01358d] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.
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Affiliation(s)
- Jaehoon Ji
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
| | - Jong Hyun Choi
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
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13
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Jian Y, Feng Q, Zhong J, Peng H, Duan J. Superconducting quantum interference effect in NbSe 2/NbSe 2van der Waals junctions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:405702. [PMID: 35853445 DOI: 10.1088/1361-648x/ac825f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 07/19/2022] [Indexed: 06/15/2023]
Abstract
Layered materials with exotic properties, such as superconducting, ferromagnetic, and so on, have attracted broad interest. The advances in van der Waals (vdW) stacking technology have enabled the fabrication of numerous types of junction structures. The dangling-bond-free interface provides an ideal platform to generate and probe various physics phenomena. Typical progress is the realization of vdW Josephson junctions with high supercurrent transparency constructed of two NbSe2layers. Here we report the observation of periodic oscillations of the voltage drop across a NbSe2/NbSe2vdW junctions under an in-plane magnetic field. The voltage-drop oscillations come from the interface and the magnitude of the oscillations has a non-monotonic temperature dependence which increases first with increasing temperature. These features make the oscillations different from the modulation of the critical current of a Josephson junction by the magnetic field and the Little-Parks effect. The oscillations are determined to be generated by the quantum interference effect between two superconducting junctions formed between the two NbSe2layers. Our results thus provide a unique way to make an in-plane superconducting quantum interference device that can survive under a high magnetic field utilizing the Ising-paring nature of the NbSe2.
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Affiliation(s)
- Yu Jian
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
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14
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Liu H, Wang J, Liu Y, Wang Y, Xu L, Huang L, Liu D, Luo J. Visualizing Ultrafast Defect-Controlled Interlayer Electron-Phonon Coupling in Van der Waals Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106955. [PMID: 35474352 DOI: 10.1002/adma.202106955] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2021] [Revised: 03/19/2022] [Indexed: 06/14/2023]
Abstract
Engineering ultrafast interlayer coupling provides access to new quantum phenomena and novel device functionalities in atomically thin van der Waals heterostructures. However, due to all the atoms of a monolayer material being exposed at the interfaces, the interlayer coupling is extremely susceptible to defects, resulting in high energy dissipation through heat and low device performance. The study of how defects affect the interlayer coupling at ultrafast and atomic scales remains a challenge. Here, using femtosecond transient absorption microscopy, a new defect-induced ultrafast interlayer electron-phonon coupling pathway is identified in a WS2 /graphene heterostructure, involving a three-body collision between electrons in WS2 and both acoustic phonons and defects in graphene. This interaction manifests as the reduced defect-related Raman resonant activity and the accelerated electron-phonon scattering time from 7.1 to 2.4 ps. Furthermore, the ultrafast interlayer coupling process is directly imaged. These insights will advance the fundamental knowledge of heat dissipation in nanoscale devices, and enable new ways to dynamically manipulate electrons and phonons via defects in van der Waals heterostructures.
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Affiliation(s)
- Huan Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Jiangcai Wang
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Yuanshuang Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Yong Wang
- Research Center for Quantum Optics and Quantum Communication, School of Science, Qingdao University of Technology, Qingdao, 266525, China
| | - Lujie Xu
- School of Instrument Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing, 100192, China
| | - Li Huang
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Dameng Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Jianbin Luo
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
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15
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Mannix AJ, Ye A, Sung SH, Ray A, Mujid F, Park C, Lee M, Kang JH, Shreiner R, High AA, Muller DA, Hovden R, Park J. Robotic four-dimensional pixel assembly of van der Waals solids. NATURE NANOTECHNOLOGY 2022; 17:361-366. [PMID: 35075299 DOI: 10.1038/s41565-021-01061-5] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2021] [Accepted: 11/25/2021] [Indexed: 06/14/2023]
Abstract
Van der Waals (vdW) solids can be engineered with atomically precise vertical composition through the assembly of layered two-dimensional materials1,2. However, the artisanal assembly of structures from micromechanically exfoliated flakes3,4 is not compatible with scalable and rapid manufacturing. Further engineering of vdW solids requires precisely designed and controlled composition over all three spatial dimensions and interlayer rotation. Here, we report a robotic four-dimensional pixel assembly method for manufacturing vdW solids with unprecedented speed, deliberate design, large area and angle control. We used the robotic assembly of prepatterned 'pixels' made from atomically thin two-dimensional components. Wafer-scale two-dimensional material films were grown, patterned through a clean, contact-free process and assembled using engineered adhesive stamps actuated by a high-vacuum robot. We fabricated vdW solids with up to 80 individual layers, consisting of 100 × 100 μm2 areas with predesigned patterned shapes, laterally/vertically programmed composition and controlled interlayer angle. This enabled efficient optical spectroscopic assays of the vdW solids, revealing new excitonic and absorbance layer dependencies in MoS2. Furthermore, we fabricated twisted N-layer assemblies, where we observed atomic reconstruction of twisted four-layer WS2 at high interlayer twist angles of ≥4°. Our method enables the rapid manufacturing of atomically resolved quantum materials, which could help realize the full potential of vdW heterostructures as a platform for novel physics2,5,6 and advanced electronic technologies7,8.
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Affiliation(s)
- Andrew J Mannix
- James Franck Institute, University of Chicago, Chicago, IL, USA
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
| | - Andrew Ye
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
| | - Suk Hyun Sung
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - Ariana Ray
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Fauzia Mujid
- Department of Chemistry, University of Chicago, Chicago, IL, USA
| | - Chibeom Park
- Department of Chemistry, University of Chicago, Chicago, IL, USA
| | - Myungjae Lee
- James Franck Institute, University of Chicago, Chicago, IL, USA
| | - Jong-Hoon Kang
- Department of Chemistry, University of Chicago, Chicago, IL, USA
| | - Robert Shreiner
- Department of Physics, University of Chicago, Chicago, IL, USA
| | - Alexander A High
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
- Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Robert Hovden
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - Jiwoong Park
- James Franck Institute, University of Chicago, Chicago, IL, USA.
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA.
- Department of Chemistry, University of Chicago, Chicago, IL, USA.
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16
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Ma Q, Grushin AG, Burch KS. Topology and geometry under the nonlinear electromagnetic spotlight. NATURE MATERIALS 2021; 20:1601-1614. [PMID: 34127824 DOI: 10.1038/s41563-021-00992-7] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 03/19/2021] [Indexed: 06/12/2023]
Abstract
For many materials, a precise knowledge of their dispersion spectra is insufficient to predict their ordered phases and physical responses. Instead, these materials are classified by the geometrical and topological properties of their wavefunctions. A key challenge is to identify and implement experiments that probe or control these quantum properties. In this Review, we describe recent progress in this direction, focusing on nonlinear electromagnetic responses that arise directly from quantum geometry and topology. We give an overview of the field by discussing theoretical ideas, experiments and the materials that drive them. We conclude by discussing how these techniques can be combined with device architectures to uncover, probe and ultimately control quantum phases with emergent topological and correlated properties.
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Affiliation(s)
- Qiong Ma
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Adolfo G Grushin
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Kenneth S Burch
- Department of Physics, Boston College, Chestnut Hill, MA, USA.
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17
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Ma HY, Hu M, Li N, Liu J, Yao W, Jia JF, Liu J. Multifunctional antiferromagnetic materials with giant piezomagnetism and noncollinear spin current. Nat Commun 2021; 12:2846. [PMID: 33990597 PMCID: PMC8121910 DOI: 10.1038/s41467-021-23127-7] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2021] [Accepted: 04/16/2021] [Indexed: 11/09/2022] Open
Abstract
We propose a new type of spin-valley locking (SVL), named C-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley to realize a multifunctional antiferromagnetic material. The new emergent quantum degree of freedom in the C-paired SVL is comprised of spin-polarized valleys related by a crystal symmetry instead of the time-reversal symmetry. Thus, both spin and valley can be accessed by simply breaking the corresponding crystal symmetry. Typically, one can use a strain field to induce a large net valley polarization/magnetization and use a charge current to generate a large noncollinear spin current. We predict the realization of the C-paired SVL in monolayer V2Se2O, which indeed exhibits giant piezomagnetism and can generate a large transverse spin current. Our findings provide unprecedented opportunities to integrate various controls of spin and valley with nonvolatile information storage in a single material, which is highly desirable for versatile fundamental research and device applications.
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Affiliation(s)
- Hai-Yang Ma
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Mengli Hu
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Nana Li
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Jianpeng Liu
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Wang Yao
- Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China
| | - Jin-Feng Jia
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.
- Tsung-Dao Lee Institute, Shanghai, China.
| | - Junwei Liu
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China.
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18
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Sun X, Adamo G, Eginligil M, Krishnamoorthy HNS, Zheludev NI, Soci C. Topological insulator metamaterial with giant circular photogalvanic effect. SCIENCE ADVANCES 2021; 7:eabe5748. [PMID: 33811072 PMCID: PMC11057521 DOI: 10.1126/sciadv.abe5748] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2020] [Accepted: 02/12/2021] [Indexed: 06/12/2023]
Abstract
One of the most notable manifestations of electronic properties of topological insulators is the dependence of the photocurrent direction on the helicity of circularly polarized optical excitation. The helicity-dependent photocurrents, underpinned by spin-momentum locking of surface Dirac electrons, are weak and easily overshadowed by bulk contributions. Here, we show that the chiral response can be enhanced by nanostructuring. The tight confinement of electromagnetic fields in the resonant nanostructure enhances the photoexcitation of spin-polarized surface states of topological insulator Bi1.5Sb0.5Te1.8Se1.2, leading to an 11-fold increase of the circular photogalvanic effect and a previously unobserved photocurrent dichroism (ρcirc = 0.87) at room temperature. The control of spin transport in topological materials by structural design is a previously unrecognized ability of metamaterials that bridges the gap between nanophotonics and spin electronics, providing opportunities for developing polarization-sensitive photodetectors.
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Affiliation(s)
- X Sun
- Centre for Disruptive Photonic Technologies, TPI, SPMS, Nanyang Technological University, Singapore 637371, Singapore
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Singapore
| | - G Adamo
- Centre for Disruptive Photonic Technologies, TPI, SPMS, Nanyang Technological University, Singapore 637371, Singapore
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Singapore
| | - M Eginligil
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Singapore
| | - H N S Krishnamoorthy
- Centre for Disruptive Photonic Technologies, TPI, SPMS, Nanyang Technological University, Singapore 637371, Singapore
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Singapore
| | - N I Zheludev
- Centre for Disruptive Photonic Technologies, TPI, SPMS, Nanyang Technological University, Singapore 637371, Singapore
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Singapore
- Optoelectronics Research Centre and Centre for Photonic Metamaterials, University of Southampton, Southampton SO17 1BJ, UK
| | - C Soci
- Centre for Disruptive Photonic Technologies, TPI, SPMS, Nanyang Technological University, Singapore 637371, Singapore.
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Singapore
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19
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Hesp NCH, Torre I, Barcons-Ruiz D, Herzig Sheinfux H, Watanabe K, Taniguchi T, Krishna Kumar R, Koppens FHL. Nano-imaging photoresponse in a moiré unit cell of minimally twisted bilayer graphene. Nat Commun 2021; 12:1640. [PMID: 33712606 PMCID: PMC7954806 DOI: 10.1038/s41467-021-21862-5] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2020] [Accepted: 02/11/2021] [Indexed: 11/09/2022] Open
Abstract
Graphene-based moiré superlattices have recently emerged as a unique class of tuneable solid-state systems that exhibit significant optoelectronic activity. Local probing at length scales of the superlattice should provide deeper insight into the microscopic mechanisms of photoresponse and the exact role of the moiré lattice. Here, we employ a nanoscale probe to study photoresponse within a single moiré unit cell of minimally twisted bilayer graphene. Our measurements reveal a spatially rich photoresponse, whose sign and magnitude are governed by the fine structure of the moiré lattice and its orientation with respect to measurement contacts. This results in a strong directional effect and a striking spatial dependence of the gate-voltage response within the moiré domains. The spatial profile and carrier-density dependence of the measured photocurrent point towards a photo-thermoelectric induced response that is further corroborated by good agreement with numerical simulations. Our work shows sub-diffraction photocurrent spectroscopy is an exceptional tool for uncovering the optoelectronic properties of moiré superlattices.
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Affiliation(s)
- Niels C H Hesp
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Barcelona, Spain
| | - Iacopo Torre
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Barcelona, Spain
| | - David Barcons-Ruiz
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Barcelona, Spain
| | - Hanan Herzig Sheinfux
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Barcelona, Spain
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
| | - Roshan Krishna Kumar
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Barcelona, Spain.
| | - Frank H L Koppens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Barcelona, Spain. .,ICREA-Institució Catalana de Recerca i Estudis Avançats, Barcelona, Spain.
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20
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Menabde SG, Lee IH, Lee S, Ha H, Heiden JT, Yoo D, Kim TT, Low T, Lee YH, Oh SH, Jang MS. Real-space imaging of acoustic plasmons in large-area graphene grown by chemical vapor deposition. Nat Commun 2021; 12:938. [PMID: 33608541 PMCID: PMC7895983 DOI: 10.1038/s41467-021-21193-5] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Accepted: 01/15/2021] [Indexed: 11/25/2022] Open
Abstract
An acoustic plasmon mode in a graphene-dielectric-metal structure has recently been spotlighted as a superior platform for strong light-matter interaction. It originates from the coupling of graphene plasmon with its mirror image and exhibits the largest field confinement in the limit of a sub-nm-thick dielectric. Although recently detected in the far-field regime, optical near-fields of this mode are yet to be observed and characterized. Here, we demonstrate a direct optical probing of the plasmonic fields reflected by the edges of graphene via near-field scattering microscope, revealing a relatively small propagation loss of the mid-infrared acoustic plasmons in our devices that allows for their real-space mapping at ambient conditions even with unprotected, large-area graphene grown by chemical vapor deposition. We show an acoustic plasmon mode that is twice as confined and has 1.4 times higher figure of merit in terms of the normalized propagation length compared to the graphene surface plasmon under similar conditions. We also investigate the behavior of the acoustic graphene plasmons in a periodic array of gold nanoribbons. Our results highlight the promise of acoustic plasmons for graphene-based optoelectronics and sensing applications.
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Affiliation(s)
- Sergey G Menabde
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - In-Ho Lee
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, USA
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, Korea
| | - Sanghyub Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, Korea
| | - Heonhak Ha
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Jacob T Heiden
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Daehan Yoo
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, USA
| | - Teun-Teun Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Korea
- Department of Physics, University of Ulsan, Ulsan, Korea
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, USA
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Korea.
- Department of Energy Science, Sungkyunkwan University, Suwon, Korea.
| | - Sang-Hyun Oh
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, USA.
| | - Min Seok Jang
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea.
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21
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Troncoso RE, Brataas A, Sudbø A. Fingerprints of Universal Spin-Stiffness Jump in Two-Dimensional Ferromagnets. PHYSICAL REVIEW LETTERS 2020; 125:237204. [PMID: 33337217 DOI: 10.1103/physrevlett.125.237204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2020] [Accepted: 11/16/2020] [Indexed: 06/12/2023]
Abstract
Motivated by recent progress on synthesizing two-dimensional magnetic van der Waals systems, we propose a setup for detecting the topological Berezinskii-Kosterlitz-Thouless phase transition in spin-transport experiments on such structures. We demonstrate that the spatial correlations of injected spin currents into a pair of metallic leads can be used to measure the predicted universal jump of 2/π in the ferromagnet spin stiffness as well as its predicted universal square root dependence on temperature as the transition is approached from below. Our setup provides a simple route to measuring this topological phase transition in two-dimensional magnetic systems, something which up to now has proven elusive. It is hoped that this will encourage experimental efforts to investigate critical phenomena beyond the standard Ginzburg-Landau paradigm in low-dimensional magnetic systems with no local order parameter.
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Affiliation(s)
- Roberto E Troncoso
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Arne Brataas
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Asle Sudbø
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
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22
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Huang Y, Wolowiec C, Zhu T, Hu Y, An L, Li Z, Grossman JC, Schuller IK, Ren S. Emerging Magnetic Interactions in van der Waals Heterostructures. NANO LETTERS 2020; 20:7852-7859. [PMID: 33054240 DOI: 10.1021/acs.nanolett.0c02175] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Vertical van der Waals (vdWs) heterostructures based on layered materials are attracting interest as a new class of quantum materials, where interfacial charge-transfer coupling can give rise to fascinating strongly correlated phenomena. Transition metal chalcogenides are a particularly exciting material family, including ferromagnetic semiconductors, multiferroics, and superconductors. Here, we report the growth of an organic-inorganic heterostructure by intercalating molecular electron donating bis(ethylenedithio)tetrathiafulvalene into (Li,Fe)OHFeSe, a layered material in which the superconducting ground state results from the intercalation of hydroxide layer. Molecular intercalation in this heterostructure induces a transformation from a paramagnetic to spin-glass-like state that is sensitive to the stoichiometry of molecular donor and an applied magnetic field. Besides, electron-donating molecules reduce the electrical resistivity in the heterostructure and modify its response to laser illumination. This hybrid heterostructure provides a promising platform to study emerging magnetic and electronic behaviors in strongly correlated layered materials.
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Affiliation(s)
- Yulong Huang
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Christian Wolowiec
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, United States
| | - Taishan Zhu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yong Hu
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Lu An
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Zheng Li
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Jeffrey C Grossman
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Ivan K Schuller
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, United States
| | - Shenqiang Ren
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
- Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
- Research and Education in Energy, Environment, and Water (RENEW) Institute, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
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23
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Yang M, Li Q, Chopdekar RV, Dhall R, Turner J, Carlström JD, Ophus C, Klewe C, Shafer P, N'Diaye AT, Choi JW, Chen G, Wu YZ, Hwang C, Wang F, Qiu ZQ. Creation of skyrmions in van der Waals ferromagnet Fe 3GeTe 2 on (Co/Pd) n superlattice. SCIENCE ADVANCES 2020; 6:eabb5157. [PMID: 32917619 PMCID: PMC7473669 DOI: 10.1126/sciadv.abb5157] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2020] [Accepted: 07/15/2020] [Indexed: 05/27/2023]
Abstract
Magnetic skyrmions are topological spin textures, which usually exist in noncentrosymmetric materials where the crystal inversion symmetry breaking generates the so-called Dzyaloshinskii-Moriya interaction. This requirement unfortunately excludes many important magnetic material classes, including the recently found two-dimensional van der Waals (vdW) magnetic materials, which offer unprecedented opportunities for spintronic technology. Using photoemission electron microscopy and Lorentz transmission electron microscopy, we investigated and stabilized Néel-type magnetic skyrmion in vdW ferromagnetic Fe3GeTe2 on top of (Co/Pd) n in which the Fe3GeTe2 has a centrosymmetric crystal structure. We demonstrate that the magnetic coupling between the Fe3GeTe2 and the (Co/Pd) n could create skyrmions in Fe3GeTe2 without the need of an external magnetic field. Our results open exciting opportunities in spintronic research and the engineering of topologically protected nanoscale features by expanding the group of skyrmion host materials to include these previously unknown vdW magnets.
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Affiliation(s)
- M Yang
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Q Li
- Department of Physics, University of California, Berkeley, CA 94720, USA.
| | - R V Chopdekar
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - R Dhall
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - J Turner
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - J D Carlström
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - C Ophus
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - C Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - P Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - A T N'Diaye
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - J W Choi
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - G Chen
- Department of Physics, University of California, Davis, CA 95616, USA
| | - Y Z Wu
- Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - C Hwang
- Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340, Republic of Korea
| | - F Wang
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Z Q Qiu
- Department of Physics, University of California, Berkeley, CA 94720, USA.
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24
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Kandrai K, Vancsó P, Kukucska G, Koltai J, Baranka G, Kamarás K, Horváth ZE, Vymazalová A, Tapasztó L, Nemes-Incze P. Signature of Large-Gap Quantum Spin Hall State in the Layered Mineral Jacutingaite. NANO LETTERS 2020; 20:5207-5213. [PMID: 32551708 PMCID: PMC7349644 DOI: 10.1021/acs.nanolett.0c01499] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Quantum spin Hall (QSH) insulators host edge states, where the helical locking of spin and momentum suppresses backscattering of charge carriers, promising applications from low-power electronics to quantum computing. A major challenge for applications is the identification of large gap QSH materials, which would enable room temperature dissipationless transport in their edge states. Here we show that the layered mineral jacutingaite (Pt2HgSe3) is a candidate QSH material, realizing the long sought-after Kane-Mele insulator. Using scanning tunneling microscopy, we measure a band gap in excess of 100 meV and identify the hallmark edge states. By calculating the [Formula: see text] invariant, we confirm the topological nature of the gap. Jacutingaite is stable in air, and we demonstrate exfoliation down to at least two layers and show that it can be integrated into heterostructures with other two-dimensional materials. This adds a topological insulator to the 2D quantum material library.
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Affiliation(s)
- Konrád Kandrai
- Centre for Energy Research, Institute of Technical Physics and Materials Science, 1121 Budapest, Hungary
| | - Péter Vancsó
- Centre for Energy Research, Institute of Technical Physics and Materials Science, 1121 Budapest, Hungary
| | - Gergő Kukucska
- ELTE Eötvös Loránd University, Department of Biological Physics, 1117 Budapest, Hungary
| | - János Koltai
- ELTE Eötvös Loránd University, Department of Biological Physics, 1117 Budapest, Hungary
| | - György Baranka
- Centre for Energy Research, Institute of Technical Physics and Materials Science, 1121 Budapest, Hungary
| | - Katalin Kamarás
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, 1121 Budapest, Hungary
| | - Zsolt E Horváth
- Centre for Energy Research, Institute of Technical Physics and Materials Science, 1121 Budapest, Hungary
| | | | - Levente Tapasztó
- Centre for Energy Research, Institute of Technical Physics and Materials Science, 1121 Budapest, Hungary
| | - Péter Nemes-Incze
- Centre for Energy Research, Institute of Technical Physics and Materials Science, 1121 Budapest, Hungary
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25
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Ogawa S, Fukushima S, Shimatani M. Graphene Plasmonics in Sensor Applications: A Review. SENSORS 2020; 20:s20123563. [PMID: 32586048 PMCID: PMC7349696 DOI: 10.3390/s20123563] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/29/2020] [Revised: 06/17/2020] [Accepted: 06/19/2020] [Indexed: 12/12/2022]
Abstract
Surface plasmon polaritons (SPPs) can be generated in graphene at frequencies in the mid-infrared to terahertz range, which is not possible using conventional plasmonic materials such as noble metals. Moreover, the lifetime and confinement volume of such SPPs are much longer and smaller, respectively, than those in metals. For these reasons, graphene plasmonics has potential applications in novel plasmonic sensors and various concepts have been proposed. This review paper examines the potential of such graphene plasmonics with regard to the development of novel high-performance sensors. The theoretical background is summarized and the intrinsic nature of graphene plasmons, interactions between graphene and SPPs induced by metallic nanostructures and the electrical control of SPPs by adjusting the Fermi level of graphene are discussed. Subsequently, the development of optical sensors, biological sensors and important components such as absorbers/emitters and reconfigurable optical mirrors for use in new sensor systems are reviewed. Finally, future challenges related to the fabrication of graphene-based devices as well as various advanced optical devices incorporating other two-dimensional materials are examined. This review is intended to assist researchers in both industry and academia in the design and development of novel sensors based on graphene plasmonics.
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26
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Gabovich AM, Li MS, Szymczak H, Voitenko AI. Electric dipole image forces in three-layer systems: The classical electrostatic model. J Chem Phys 2020; 152:094705. [PMID: 33480708 DOI: 10.1063/1.5142280] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
General exact analytical expressions have been derived for the image force energy Wi(Z, φ) of a point dipole in a classical three-layer system composed of dispersionless media with arbitrary constant dielectric permittivities εi. Here, i = 1-3 is the layer number, and Z and φ are the dipole coordinate and orientation angle, respectively. It was found that the long-range asymptotics Wi(Z→∞,φ) in both covers (i = 1, 3) are reached unexpectedly far from the interlayer (i = 2). Another specific feature of the solution consists in that the interference of the fields created by polarization charges emerging at both interfaces leads to the appearance of a constant contribution inside the interlayer with a non-standard dependence on the dipole orientation angle φ. It was shown that by changing the dielectric constants of the structure components, one can realize two peculiar regimes of the Wi(Z, φ) behavior in the covers; namely, there arises either a potential barrier preventing adsorption or a well far from the interface, both being of a totally electrostatic origin, i.e., without involving the Pauli exchange repulsion, which is taken into account in the conventional theories of physical adsorption. The results obtained provide a fresh insight into the physics of adsorption in physical electronics, chemical physics, and electrochemistry.
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Affiliation(s)
- Alexander M Gabovich
- Institute of Physics, National Academy of Sciences of Ukraine, 46 Nauky Ave., Kyiv 03028, Ukraine
| | - Mai Suan Li
- Institute of Physics, Polish Academy of Sciences, 32/46 Al. Lotników, Warsaw PL-02-668, Poland
| | - Henryk Szymczak
- Institute of Physics, Polish Academy of Sciences, 32/46 Al. Lotników, Warsaw PL-02-668, Poland
| | - Alexander I Voitenko
- Institute of Physics, National Academy of Sciences of Ukraine, 46 Nauky Ave., Kyiv 03028, Ukraine
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27
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Gao A, Zhang Z, Li L, Zheng B, Wang C, Wang Y, Cao T, Wang Y, Liang SJ, Miao F, Shi Y, Wang X. Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures. ACS NANO 2020; 14:434-441. [PMID: 31877250 DOI: 10.1021/acsnano.9b06140] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Maintaining the rapid development of information technology by scaling down a metal-oxide semiconductor field-effect transistor faces two serious challenges. First, the gate field loses control of the channel as it continuously decreases. Second, the fundamental thermionic limit restricts the reduction in supply voltage. Thus, further scaling down necessitates alternative device structures and different switching mechanisms. Here, we report impact-ionization transistors (IITs) based on nanoscale (∼30 nm) vertical graphene/black phosphorus (BP)/indium selenide (InSe) heterostructures. By facilitating the carrier multiplication of the ballistic impact-ionization process as the internal gain mechanism in sub-mean-free-path (sub-MFP) channels, the IITs exhibit a low average subthreshold swing (SS < 1 mV/dec) over five current levels. High stability (>10 000 cycles) and small hysteresis (<1%) switching properties are also obtained. The experimental demonstration of such transistor combining steep SS, high ON-state current density, reliable robustness, miniature footprint, and low bias voltage approaches fulfillments of targets for next-generation devices in the International Technology Roadmap for Semiconductors.
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Affiliation(s)
- Anyuan Gao
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Zhiyi Zhang
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Lingfei Li
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Binjie Zheng
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Chenyu Wang
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Yaojia Wang
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Tianjun Cao
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Yu Wang
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Yi Shi
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Xiaomu Wang
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
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28
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Bottom-up growth of homogeneous Moiré superlattices in bismuth oxychloride spiral nanosheets. Nat Commun 2019; 10:4472. [PMID: 31578330 PMCID: PMC6775108 DOI: 10.1038/s41467-019-12347-7] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2019] [Accepted: 09/04/2019] [Indexed: 11/20/2022] Open
Abstract
Moiré superlattices (MSLs) are modulated structures produced from homogeneous or heterogeneous 2D layers stacked with a twist angle and/or lattice mismatch. Expanding the range of available materials, methods for fabricating MSL, and realization of unique emergent properties are key challenges. Here we report a facile bottom-up synthesis of homogeneous MSL based on a wide-gap 2D semiconductor, BiOCl, using a one-pot solvothermal approach with robust reproducibility. Unlike previous MSLs usually prepared by directly stacking two monolayers, our BiOCl MSLs are realized in a scalable, direct way through chemical growth of spiral-type nanosheets driven by screw-dislocations. We find emergent properties including large band gap reduction (∼0.6 eV), two-fold increase in carrier lifetime, and strongly enhanced photocatalytic activity. First-principles calculations reveal that such unusual properties can be ascribed to the locally enhanced inter-layer coupling associated with the Moiré potential modulation. Our results demonstrate the promise of MSL materials for chemical and physical functions. Expanding the range of available materials, methods for fabricating Moiré superlattices, and realization of new emergent properties are key challenges. Here the authors report a facile bottom-up synthesis of homogeneous Moiré superlattices based on a wide-gap 2D semiconductor, bismuth oxychloride.
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29
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Ryu YK, Frisenda R, Castellanos-Gomez A. Superlattices based on van der Waals 2D materials. Chem Commun (Camb) 2019; 55:11498-11510. [PMID: 31483427 DOI: 10.1039/c9cc04919c] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, and electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, and 2D-2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodic perturbation, each component contributing with different characteristics. Furthermore, in a 2D material-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D material-based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D material-based superlattices and describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications of each type of superlattices.
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Affiliation(s)
- Yu Kyoung Ryu
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain.
| | - Riccardo Frisenda
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain.
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain.
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30
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Liu Y, Wang J, Kim S, Sun H, Yang F, Fang Z, Tamura N, Zhang R, Song X, Wen J, Xu BZ, Wang M, Lin S, Yu Q, Tom KB, Deng Y, Turner J, Chan E, Jin D, Ritchie RO, Minor AM, Chrzan DC, Scott MC, Yao J. Helical van der Waals crystals with discretized Eshelby twist. Nature 2019; 570:358-362. [PMID: 31217599 DOI: 10.1038/s41586-019-1308-y] [Citation(s) in RCA: 59] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2018] [Accepted: 04/26/2019] [Indexed: 11/09/2022]
Abstract
The ability to manipulate the twisting topology of van der Waals structures offers a new degree of freedom through which to tailor their electrical and optical properties. The twist angle strongly affects the electronic states, excitons and phonons of the twisted structures through interlayer coupling, giving rise to exotic optical, electric and spintronic behaviours1-5. In twisted bilayer graphene, at certain twist angles, long-range periodicity associated with moiré patterns introduces flat electronic bands and highly localized electronic states, resulting in Mott insulating behaviour and superconductivity3,4. Theoretical studies suggest that these twist-induced phenomena are common to layered materials such as transition-metal dichalcogenides and black phosphorus6,7. Twisted van der Waals structures are usually created using a transfer-stacking method, but this method cannot be used for materials with relatively strong interlayer binding. Facile bottom-up growth methods could provide an alternative means to create twisted van der Waals structures. Here we demonstrate that the Eshelby twist, which is associated with a screw dislocation (a chiral topological defect), can drive the formation of such structures on scales ranging from the nanoscale to the mesoscale. In the synthesis, axial screw dislocations are first introduced into nanowires growing along the stacking direction, yielding van der Waals nanostructures with continuous twisting in which the total twist rates are defined by the radii of the nanowires. Further radial growth of those twisted nanowires that are attached to the substrate leads to an increase in elastic energy, as the total twist rate is fixed by the substrate. The stored elastic energy can be reduced by accommodating the fixed twist rate in a series of discrete jumps. This yields mesoscale twisting structures consisting of a helical assembly of nanoplates demarcated by atomically sharp interfaces with a range of twist angles. We further show that the twisting topology can be tailored by controlling the radial size of the structure.
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Affiliation(s)
- Yin Liu
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jie Wang
- Center for Nanoscale Materials, Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, USA
| | - Sujung Kim
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,Department of Electrical and Computer Engineering, University of California Santa Cruz, Santa Cruz, CA, USA
| | - Haoye Sun
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA
| | - Fuyi Yang
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Zixuan Fang
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China
| | - Nobumichi Tamura
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Ruopeng Zhang
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Xiaohui Song
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jianguo Wen
- Center for Nanoscale Materials, Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, USA
| | - Bo Z Xu
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA
| | - Michael Wang
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA
| | - Shuren Lin
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Qin Yu
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Kyle B Tom
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Yang Deng
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA
| | - John Turner
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Emory Chan
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Dafei Jin
- Center for Nanoscale Materials, Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, USA
| | - Robert O Ritchie
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Andrew M Minor
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Daryl C Chrzan
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Mary C Scott
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA.,National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jie Yao
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, CA, USA. .,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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31
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Huang S, Zhang G, Fan F, Song C, Wang F, Xing Q, Wang C, Wu H, Yan H. Strain-tunable van der Waals interactions in few-layer black phosphorus. Nat Commun 2019; 10:2447. [PMID: 31164654 PMCID: PMC6547657 DOI: 10.1038/s41467-019-10483-8] [Citation(s) in RCA: 54] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2019] [Accepted: 05/16/2019] [Indexed: 11/08/2022] Open
Abstract
Interlayer interactions in 2D materials, also known as van der Waals (vdWs) interactions, play a critical role in the physical properties of layered materials. It is fascinating to manipulate the vdWs interaction, and hence to "redefine" the material properties. Here, we demonstrate that in-plane biaxial strain can effectively tune the vdWs interaction of few-layer black phosphorus with thickness of 2-10 layers, using infrared spectroscopy. Surprisingly, our results reveal that in-plane tensile strain efficiently weakens the interlayer coupling, even though the sample shrinks in the vertical direction due to the Poisson effect, in sharp contrast to one's intuition. Moreover, density functional theory (DFT) calculations further confirm our observations and indicate a dominant role of the puckered lattice structure. Our study highlights the important role played by vdWs interactions in 2D materials during external physical perturbations.
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Affiliation(s)
- Shenyang Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, 200433, Shanghai, China
| | - Guowei Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, 200433, Shanghai, China
| | - Fengren Fan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Key Laboratory for Computational Physical Sciences (Ministry of Education), Fudan University, 200433, Shanghai, China
| | - Chaoyu Song
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, 200433, Shanghai, China
| | - Fanjie Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, 200433, Shanghai, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, 200433, Shanghai, China
| | - Chong Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, 200433, Shanghai, China
| | - Hua Wu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Key Laboratory for Computational Physical Sciences (Ministry of Education), Fudan University, 200433, Shanghai, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.
- Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, 200433, Shanghai, China.
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Electrostatic Interaction of Point Charges in Three-Layer Structures: The Classical Model. CONDENSED MATTER 2019. [DOI: 10.3390/condmat4020044] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Electrostatic interaction energy W between two point charges in a three-layer plane system was calculated on the basis of the Green’s function method in the classical model of constant dielectric permittivities for all media involved. A regular method for the calculation of W ( Z , Z ′ , R ) , where Z and Z ′ are the charge coordinates normal to the interfaces, and R the lateral (along the interfaces) distance between the charges, was proposed. The method consists in substituting the evaluation of integrals of rapidly oscillating functions over the semi-infinite interval by constructing an analytical series of inverse radical functions to a required accuracy. Simple finite-term analytical approximations of the dependence W ( Z , Z ′ , R ) were proposed. Two especially important particular cases of charge configurations were analyzed in more detail: (i) both charges are in the same medium and Z = Z ′ ; and (ii) the charges are located at different interfaces across the slab. It was demonstrated that the W dependence on the charge–charge distance S = R 2 + Z − Z ′ 2 differs from the classical Coulombic one W ∼ S − 1 . This phenomenon occurs due to the appearance of polarization charges at both interfaces, which ascribes a many-body character to the problem from the outset. The results obtained testify, in particular, that the electron–hole interaction in heterostructures leading to the exciton formation is different in the intra-slab and across-slab charge configurations, which is usually overlooked in specific calculations related to the subject concerned. Our consideration clearly demonstrates the origin, the character, and the consequences of the actual difference. The often used Rytova–Keldysh approximation was analyzed. The cause of its relative success was explained, and the applicability limits were determined.
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Zhang X, Liao Q, Kang Z, Liu B, Ou Y, Du J, Xiao J, Gao L, Shan H, Luo Y, Fang Z, Wang P, Sun Z, Zhang Z, Zhang Y. Self-Healing Originated van der Waals Homojunctions with Strong Interlayer Coupling for High-Performance Photodiodes. ACS NANO 2019; 13:3280-3291. [PMID: 30803226 DOI: 10.1021/acsnano.8b09130] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The dangling-bond-free surfaces of van der Waals (vdW) materials make it possible to build ultrathin junctions. Fundamentally, the interfacial phenomena and related optoelectronic properties of vdW junctions are modulated by the interlayer coupling effect. However, the weak interlayer coupling of vdW heterostructures limits the interlayer charge transfer efficiency, resulting in low photoresponsivity. Here, a bilayer MoS2 homogeneous junction is constructed by stacking the as-grown onto the self-healed monolayer MoS2. The homojunction barrier of ∼165 meV is obtained by the electronic structure modulation of defect self-healing. This homojunction reveals the stronger interlayer coupling effect in comparison with vdW heterostructures. This ultrastrong interlayer coupling effect is experimentally verified by Raman spectra and angle-resolved photoemission spectroscopy. The ultrafast interlayer charge transfer takes place within ∼447 fs, which is faster than those of most vdW heterostructures. Furthermore, the homojunction photodiode manifests outstanding rectifying behavior with an ideal factor of ∼1.6, perfect air stability over 12 months, and high responsivity of ∼54.6 mA/W. Moreover, the interlayer exciton peak of ∼1.66 eV is found in vdW homojunctions. This work offers an uncommon vdW junction with strong interlayer coupling and perfects the relevance of interlayer coupling and interlayer charge transfer.
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Affiliation(s)
- Xiankun Zhang
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Qingliang Liao
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Zhuo Kang
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Baishan Liu
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Yang Ou
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Junli Du
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Jiankun Xiao
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Li Gao
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
| | - Hangyong Shan
- School of Physics, State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter , Peking University , Beijing 100871 , China
| | - Yang Luo
- School of Physics, State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter , Peking University , Beijing 100871 , China
| | - Zheyu Fang
- School of Physics, State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter , Peking University , Beijing 100871 , China
| | - Pengdong Wang
- National Synchrotron Radiation Laboratory , University of Science and Technology of China , Hefei , Anhui 230029 , China
| | - Zhe Sun
- National Synchrotron Radiation Laboratory , University of Science and Technology of China , Hefei , Anhui 230029 , China
| | - Zheng Zhang
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
- Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies , University of Science and Technology Beijing , Beijing 100083 , China
| | - Yue Zhang
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering , University of Science and Technology Beijing , Beijing 100083 , China
- Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies , University of Science and Technology Beijing , Beijing 100083 , China
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Arp TB, Gabor NM. Multiple parameter dynamic photoresponse microscopy for data-intensive optoelectronic measurements of van der Waals heterostructures. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2019; 90:023702. [PMID: 30831738 DOI: 10.1063/1.5085007] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2018] [Accepted: 01/26/2019] [Indexed: 06/09/2023]
Abstract
Quantum devices made from van der Waals (vdW) heterostructures of two dimensional (2D) materials may herald a new frontier in designer materials that exhibit novel electronic properties and unusual electronic phases. However, due to the complexity of layered atomic structures and the physics that emerges, experimental realization of devices with tailored physical properties will require comprehensive measurements across a large domain of material and device parameters. Such multi-parameter measurements require new strategies that combine data-intensive techniques-often applied in astronomy and high energy physics-with the experimental tools of solid state physics and materials science. We discuss the challenges of comprehensive experimental science and present a technique, called Multi-Parameter Dynamic Photoresponse Microscopy (MPDPM), which utilizes ultrafast lasers, diffraction limited scanning beam optics, and hardware automation to characterize the photoresponse of 2D heterostructures in a time efficient manner. Using comprehensive methods on vdW heterostructures results in large and complicated data sets; in the case of MPDPM, we measure a large set of images requiring advanced image analysis to extract the underlying physics. We discuss how to approach such data sets in general and in the specific case of a graphene-boron nitride-graphite heterostructure photocell.
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Affiliation(s)
- Trevor B Arp
- Quantum Materials Optoelectronics Laboratory, Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
| | - Nathaniel M Gabor
- Quantum Materials Optoelectronics Laboratory, Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
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