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Du L, Huang Z, Zhang J, Ye F, Dai Q, Deng H, Zhang G, Sun Z. Nonlinear physics of moiré superlattices. NATURE MATERIALS 2024; 23:1179-1192. [PMID: 39215154 DOI: 10.1038/s41563-024-01951-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 06/13/2024] [Indexed: 09/04/2024]
Abstract
Nonlinear physics is one of the most important research fields in modern physics and materials science. It offers an unprecedented paradigm for exploring many fascinating physical phenomena and realizing diverse cutting-edge applications inconceivable in the framework of linear processes. Here we review the recent theoretical and experimental progress concerning the nonlinear physics of synthetic quantum moiré superlattices. We focus on the emerging nonlinear electronic, optical and optoelectronic properties of moiré superlattices, including but not limited to the nonlinear anomalous Hall effect, dynamically twistable harmonic generation, nonlinear optical chirality, ultralow-power-threshold optical solitons and spontaneous photogalvanic effect. We also present our perspectives on the future opportunities and challenges in this rapidly progressing field, and highlight the implications for advances in both fundamental physics and technological innovations.
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Affiliation(s)
- Luojun Du
- Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Jin Zhang
- QTF Centre of Excellence, Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Fangwei Ye
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
| | - Hui Deng
- Physics Department, University of Michigan, Ann Arbor, MI, USA
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
- Songshan-Lake Materials Laboratory, Dongguan, China.
| | - Zhipei Sun
- QTF Centre of Excellence, Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland.
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Lu Z, Hou S, Lin R, Shi J, Wu Q, Lin L, Shi J, Yang Y, Lambert C, Hong W. Conductance Quantization in 2D Semi-Metallic Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311491. [PMID: 38682729 DOI: 10.1002/smll.202311491] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2023] [Revised: 03/09/2024] [Indexed: 05/01/2024]
Abstract
Conductance quantization of 2D materials is significant for understanding the charge transport at the atomic scale, which provides a platform to manipulate the quantum states, showing promising applications for nanoelectronics and memristors. However, the conventional methods for investigating conductance quantization are only applicable to materials consisting of one element, such as metal and graphene. The experimental observation of conductance quantization in transition metal dichalcogenides (TMDCs) with complex compositions and structures remains a challenge. To address this issue, an approach is proposed to characterize the charge transport across a single atom in TMDCs by integrating in situ synthesized 1T'-WTe2 electrodes with scanning tunneling microscope break junction (STM-BJ) technique. The quantized conductance of 1T'-WTe2 is measured for the first time, and the quantum states can be modulated by stretching speed and solvent. Combined with theoretical calculations, the evolution of quantized and corresponding configurations during the break junction process is demonstrated. This work provides a facile and reliable avenue to characterize and modulate conductance quantization of 2D materials, intensively expanding the research scope of quantum effects in diverse materials.
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Affiliation(s)
- Zhixing Lu
- Engineering Research Center of Polymer Green Recycling of Ministry of Education, College of Environmental and Resource Sciences, Fujian Normal University, Fuzhou, 350117, China
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Songjun Hou
- Department of Physics, Lancaster University, Lancaster, LA1 4YB, UK
| | - Rongjian Lin
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Jie Shi
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Qingqing Wu
- Department of Physics, Lancaster University, Lancaster, LA1 4YB, UK
| | - Luchun Lin
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Jia Shi
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Yang Yang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Colin Lambert
- Department of Physics, Lancaster University, Lancaster, LA1 4YB, UK
| | - Wenjing Hong
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
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Mukherjee S, Badhulika S. WSe 2/chitosan-based wearable multi-functional platform for monitoring electrophysiological signals, pulse rate, respiratory rate, and body movements. Mikrochim Acta 2024; 191:514. [PMID: 39105930 DOI: 10.1007/s00604-024-06595-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Accepted: 07/26/2024] [Indexed: 08/07/2024]
Abstract
A cleanroom free optimized fabrication of a low-cost facile tungsten diselenide (WSe2) combined with chitosan-based hydrogel device is reported for multifunctional applications including tactile sensing, pulse rate monitoring, respiratory rate monitoring, human body movements detection, and human electrophysiological signal detection. Chitosan being a natural biodegradable, non-toxic compound serves as a substrate to the semiconducting WSe2 electrode which is synthesized using a single step hydrothermal technique. Elaborate characterization studies are performed to confirm the morphological, structural, and electrical properties of the fabricated chitosan/WSe2 device. Chitosan/WSe2 sensor with copper contacts on each side is put directly on skin to capture human body motions. The resistivity of the sample was calculated as 26 kΩ m-1. The device behaves as an ultrasensitive pressure sensor for tactile and arterial pulse sensing with response time of 0.9 s and sensitivity of around 0.02 kPa-1. It is also capable for strain sensing with a gauge factor of 54 which is significantly higher than similar other reported electrodes. The human body movements sensing can be attributed to the piezoresistive character of WSe2 that originates from its non-centrosymmetric structure. Further, the sensor is employed for monitoring respiratory rate which measures to 13 counts/min for healthy individual and electrophysiological signals like ECG and EOG which can be used later for detecting numerous pathological conditions in humans. Electrophysiological signal sensing is carried out using a bio-signal amplifier (Bio-Amp EXG Pill) connected to Arduino. The skin-friendly, low toxic WSe2/chitosan dry electrodes pave the way for replacing wet electrodes and find numerous applications in personalized healthcare.
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Affiliation(s)
- Shuvam Mukherjee
- Centre for Interdisciplinary Programs, Integrated Sensor Systems, Indian Institute of Technology-Hyderabad, Kandi, Sangareddy, India
| | - Sushmee Badhulika
- Centre for Interdisciplinary Programs, Integrated Sensor Systems, Indian Institute of Technology-Hyderabad, Kandi, Sangareddy, India.
- Department of Electrical Engineering, Indian Institute of Technology-Hyderabad, Kandi, Sangareddy, India.
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4
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Ding P, Yan J, Wang J, Han X, Yang W, Chen H, Zhang D, Huang M, Zhao J, Yang S, Xue TT, Liu L, Dai Y, Hou Y, Zhang S, Xu X, Wang Y, Huang Y. Manipulation of Moiré Superlattice in Twisted Monolayer-multilayer Graphene by Moving Nanobubbles. NANO LETTERS 2024; 24:8208-8215. [PMID: 38913825 DOI: 10.1021/acs.nanolett.4c02548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/26/2024]
Abstract
In the heterostructure of two-dimensional (2D) materials, many novel physics phenomena are strongly dependent on the Moiré superlattice. How to achieve the continuous manipulation of the Moiré superlattice in the same sample is very important to study the evolution of various physical properties. Here, in minimally twisted monolayer-multilayer graphene, we found that bubble-induced strain has a huge impact on the Moiré superlattice. By employing the AFM tip to dynamically and continuously move the nanobubble, we realized the modulation of the Moiré superlattice, like the evolution of regular triangular domains into long strip domain structures with single or double domain walls. We also achieved controllable modulation of the Moiré superlattice by moving multiple nanobubbles and establishing the coupling of nanobubbles. Our work presents a flexible method for continuous and controllable manipulation of Moiré superlattices, which will be widely used to study novel physical properties in 2D heterostructures.
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Affiliation(s)
- Pengfei Ding
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Jiahao Yan
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Jiakai Wang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Xu Han
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Wenchen Yang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Hui Chen
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Decheng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Mengting Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jinghan Zhao
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Shiqi Yang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Tong-Tong Xue
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yunyun Dai
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Shuai Zhang
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Xiaolong Xu
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Yeliang Wang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 100190, China
| | - Yuan Huang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 100190, China
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5
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Calavalle F, Tsirkin SS, Souza I, De Juan F, Chuvilin A, Fert A, Gobbi M, Casanova F, Hueso LE. Odd Nonlinear Conductivity under Spatial Inversion in Chiral Tellurium. PHYSICAL REVIEW LETTERS 2024; 132:046303. [PMID: 38335368 DOI: 10.1103/physrevlett.132.046303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 12/13/2023] [Indexed: 02/12/2024]
Abstract
Electrical transport in noncentrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a nonlinear conductivity emerges along specific crystallographic directions. This nonlinear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the nonlinear conductivity remain to be explored. Here, we report on a large, nonlinear conductivity in chiral tellurium. By measuring samples with opposite handedness, we demonstrate that the nonlinear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the nonlinear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral tellurium as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and nonlinear transport; but also to develop wireless rectifiers and energy-harvesting chiral devices.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Witold Skowroński
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- AGH University of Krakow, Institute of Electronics, 30-059 Kraków, Poland
| | - F Calavalle
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Stepan S Tsirkin
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Ivo Souza
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fernando De Juan
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Albert Fert
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department of Materials Physics UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
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Bian R, Cao G, Pan E, Liu Q, Li Z, Liang L, Wu Q, Ang LK, Li W, Zhao X, Liu F. High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning. NANO LETTERS 2023; 23:4595-4601. [PMID: 37154868 DOI: 10.1021/acs.nanolett.3c01053] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (106) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.
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Affiliation(s)
- Renji Bian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 324003, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Lei Liang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qingyun Wu
- Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Lay Kee Ang
- Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 324003, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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