1
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Datta S, Bhowmik S, Varshney H, Watanabe K, Taniguchi T, Agarwal A, Chandni U. Nonlinear Electrical Transport Unveils Fermi Surface Malleability in a Moiré Heterostructure. NANO LETTERS 2024. [PMID: 39058474 DOI: 10.1021/acs.nanolett.4c01946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2024]
Abstract
Van Hove singularities enhance many-body interactions and induce collective states of matter ranging from superconductivity to magnetism. In magic-angle twisted bilayer graphene, van Hove singularities appear at low energies and are malleable with density, leading to a sequence of Lifshitz transitions and resets observable in Hall measurements. However, without a magnetic field, linear transport measurements have limited sensitivity to the band's topology. Here, we utilize nonlinear longitudinal and transverse transport measurements to probe these unique features in twisted bilayer graphene at zero magnetic field. We demonstrate that the nonlinear responses, induced by the Berry curvature dipole and extrinsic scattering processes, intricately map the Fermi surface reconstructions at various fillings. Importantly, our experiments highlight the intrinsic connection of these features with the moiré bands. Beyond corroborating the insights from linear Hall measurements, our findings establish nonlinear transport as a pivotal tool for probing band topology and correlated phenomena.
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Affiliation(s)
- Suvronil Datta
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
| | - Saisab Bhowmik
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
| | - Harsh Varshney
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
| | - U Chandni
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
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2
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He P, Isobe H, Koon GKW, Tan JY, Hu J, Li J, Nagaosa N, Shen J. Third-order nonlinear Hall effect in a quantum Hall system. NATURE NANOTECHNOLOGY 2024:10.1038/s41565-024-01730-1. [PMID: 39048706 DOI: 10.1038/s41565-024-01730-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2023] [Accepted: 06/27/2024] [Indexed: 07/27/2024]
Abstract
In two-dimensional systems, perpendicular magnetic fields can induce a bulk band gap and chiral edge states, which gives rise to the quantum Hall effect. The quantum Hall effect is characterized by zero longitudinal resistance (Rxx) and Hall resistance (Rxy) plateaus quantized to h/(υe2) in the linear response regime, where υ is the Landau level filling factor, e is the elementary charge and h is Planck's constant. Here we explore the nonlinear response of monolayer graphene when tuned to a quantum Hall state. We observe a third-order Hall effect that exhibits a nonzero voltage plateau scaling cubically with the probe current. By contrast, the third-order longitudinal voltage remains zero. The magnitude of the third-order response is insensitive to variations in magnetic field (down to ~5 T) and in temperature (up to ~60 K). Moreover, the third-order response emerges in graphene devices with a variety of geometries, different substrates and stacking configurations. We term the effect third-order nonlinear response of the quantum Hall state and propose that electron-electron interaction between the quantum Hall edge states is the origin of the nonlinear response of the quantum Hall state.
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Affiliation(s)
- Pan He
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
- Shanghai Branch, Hefei National Laboratory, Shanghai, China.
| | - Hiroki Isobe
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
- Department of Physics, Kyushu University, Fukuoka, Japan.
| | - Gavin Kok Wai Koon
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
| | - Jun You Tan
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
| | - Junxiong Hu
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore.
- Department of Physics, National University of Singapore, Singapore, Singapore.
| | - Jingru Li
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China
| | - Naoto Nagaosa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
- Fundamental Quantum Science Program, TRIP Headquarters, RIKEN, Wako, Japan.
| | - Jian Shen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
- Shanghai Branch, Hefei National Laboratory, Shanghai, China.
- Department of Physics, Fudan University, Shanghai, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
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3
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Liu Y, He W, Wu B, Xuan F, Fang Y, Zhong Z, Fu J, Wang JP, Li Z, Wang J, Yao M, Huang F, Zhen L, Li Y, Xu CY. Stacking Faults Enabled Second Harmonic Generation in Centrosymmetric van der Waals RhI 3. ACS NANO 2024; 18:17053-17064. [PMID: 38870206 DOI: 10.1021/acsnano.4c03562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
Second harmonic generation (SHG) in van der Waals (vdW) materials has garnered significant attention due to its potential for integrated nonlinear optical and optoelectronic applications. Stacking faults in vdW materials are a typical kind of planar defect that introduces a degree of freedom to modulate the crystal symmetry and resultant SHG response. However, the physical origin and tunability of stacking-fault-governed SHG in vdW materials remain unclear. Here, taking the intrinsically centrosymmetric vdW RhI3 as an example, we theoretically reveal the origin of stacking-fault-governed SHG response, where the SHG response comes from the energetically favorable AC̅ stacking fault of which the electrical transitions along the high-symmetry paths Γ-M and Γ-K in the Brillion zone play the dominant role at 810 nm. Such a stacking-fault-governed SHG response is further confirmed via structural characterizations and SHG measurements. Furthermore, by applying hydrostatic pressure on RhI3, the correlation between structural evolution and SHG response is revealed with SHG enhancement up to 6.9 times, where the decreased electronic transition energies and higher momentum matrix elements due to the stronger interlayer interactions upon compression magnify the SHG susceptibility. This study develops a promising foundation for nonlinear nano-optics applications through the strategic design of stacking faults.
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Affiliation(s)
- Yue Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Wen He
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Bingze Wu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | | | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhengbo Zhong
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jierui Fu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Jia-Peng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Zhipeng Li
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jinzhong Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Mingguang Yao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Liang Zhen
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Yang Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
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4
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Cheng B, Gao Y, Zheng Z, Chen S, Liu Z, Zhang L, Zhu Q, Li H, Li L, Zeng C. Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium. Nat Commun 2024; 15:5513. [PMID: 38951497 PMCID: PMC11217359 DOI: 10.1038/s41467-024-49706-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Accepted: 06/17/2024] [Indexed: 07/03/2024] Open
Abstract
The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. However, previously reported NLHE systems normally suffer from relatively small Hall voltage outputs and/or low working temperatures. In this study, we report the observation of a pronounced NLHE in tellurium (Te) thin flakes at room temperature. Benefiting from the semiconductor nature of Te, the obtained nonlinear response can be readily enhanced through electrostatic gating, leading to a second-harmonic output at 300 K up to 2.8 mV. By utilizing such a giant NLHE, we further demonstrate the potential of Te as a wireless Hall rectifier within the radiofrequency range, which is manifested by the remarkable and tunable rectification effect also at room temperature. Extrinsic scattering is then revealed to be the dominant mechanism for the NLHE in Te, with symmetry breaking on the surface playing a key role. As a simple elemental semiconductor, Te provides an appealing platform to advance our understanding of nonlinear transport in solids and to develop NLHE-based electronic devices.
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Affiliation(s)
- Bin Cheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Yang Gao
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zhi Zheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Shuhang Chen
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zheng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Ling Zhang
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Qi Zhu
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Hui Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, 230601, China
| | - Lin Li
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
| | - Changgan Zeng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
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5
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Wang E, Zeng H, Duan W, Huang H. Spontaneous Inversion Symmetry Breaking and Emergence of Berry Curvature and Orbital Magnetization in Topological ZrTe_{5} Films. PHYSICAL REVIEW LETTERS 2024; 132:266802. [PMID: 38996308 DOI: 10.1103/physrevlett.132.266802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 04/04/2024] [Accepted: 05/21/2024] [Indexed: 07/14/2024]
Abstract
ZrTe_{5} has recently attracted much attention due to the observation of intriguing nonreciprocal transport responses which necessitate the lack of inversion symmetry (I). However, there has been debate on the exact I-asymmetric structure and the underlying I-breaking mechanism. Here, we report a spontaneous I breaking in ZrTe_{5} films, which initiates from interlayer sliding and is stabilized by subtle intralayer distortion. Moreover, we predict significant nonlinear anomalous Hall effect (NAHE) and kinetic magnetoelectric effect (KME), which are attributed to the emergence of Berry curvature and orbital magnetization in the absence of I symmetry. We also explicitly manifest the direct coupling between sliding ferroelectricity, NAHE, and KME based on a sliding-dependent k·p model. By studying the subsurface sliding in ZrTe_{5} multilayers, we speculate that surface nonlinear Hall current and magnetization would emerge on the natural cleavage surface. Our findings elucidate the sliding-induced I-broken mechanism in ZrTe_{5} films and open new avenues for tuning nonreciprocal transport properties in Van der Waals layered materials.
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Affiliation(s)
| | | | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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6
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Naseer A, Priydarshi A, Ghosh P, Ahammed R, Chauhan YS, Bhowmick S, Agarwal A. Room temperature ferroelectricity and an electrically tunable Berry curvature dipole in III-V monolayers. NANOSCALE 2024; 16:12107-12117. [PMID: 38829164 DOI: 10.1039/d4nr00336e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC m-1, outperforming most known 2D ferroelectrics. We demonstrate an electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between the Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices.
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Affiliation(s)
- Ateeb Naseer
- Department of Electrical Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India
| | - Achintya Priydarshi
- Department of Electrical Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India
| | - Pritam Ghosh
- Department of Materials Science & Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India.
| | - Raihan Ahammed
- Department of Physics, Indian Institute of Technology, Kanpur, Kanpur 208016, India.
| | - Yogesh Singh Chauhan
- Department of Electrical Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India
| | - Somnath Bhowmick
- Department of Materials Science & Engineering, Indian Institute of Technology, Kanpur, Kanpur 208016, India.
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology, Kanpur, Kanpur 208016, India.
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7
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Watanabe H, Yanase Y. Magnetic parity violation and parity-time-reversal-symmetric magnets. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:373001. [PMID: 38899401 DOI: 10.1088/1361-648x/ad52dd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Accepted: 05/31/2024] [Indexed: 06/21/2024]
Abstract
Parity-time-reversal symmetry (PTsymmetry), a symmetry for the combined operations of space inversion (P) and time reversal (T), is a fundamental concept of physics and characterizes the functionality of materials as well asPandTsymmetries. In particular, thePT-symmetric systems can be found in the centrosymmetric crystals undergoing the parity-violating magnetic order which we call the odd-parity magnetic multipole order. While this spontaneous order leavesPTsymmetry intact, the simultaneous violation ofPandTsymmetries gives rise to various emergent responses that are qualitatively different from those allowed by the nonmagneticP-symmetry breaking or by the ferromagnetic order. In this review, we introduce candidates hosting the intriguing spontaneous order and overview the characteristic physical responses. Various off-diagonal and/or nonreciprocal responses are identified, which are closely related to the unusual electronic structures such as hidden spin-momentum locking and asymmetric band dispersion.
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Affiliation(s)
- Hikaru Watanabe
- Research Center for Advanced Science and Technology, University of Tokyo, Meguro-ku, Tokyo 153-8904, Japan
| | - Youichi Yanase
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
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8
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Li Y, Yu W, Zhang K, Cui N, Yun T, Xia X, Jiang Y, Zhang G, Mu H, Lin S. Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration. MATERIALS HORIZONS 2024; 11:2572-2602. [PMID: 38482962 DOI: 10.1039/d3mh02250a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.
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Affiliation(s)
- Yun Li
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Kai Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- MOE Key Laboratory of Laser Life Science &Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Tinghe Yun
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Yan Jiang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
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9
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Wang N, You JY, Wang A, Zhou X, Zhang Z, Lai S, Feng YP, Lin H, Chang G, Gao WB. Non-centrosymmetric topological phase probed by non-linear Hall effect. Natl Sci Rev 2024; 11:nwad103. [PMID: 38725935 PMCID: PMC11081079 DOI: 10.1093/nsr/nwad103] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Revised: 12/22/2022] [Accepted: 02/09/2023] [Indexed: 05/12/2024] Open
Abstract
Non-centrosymmetric topological material has attracted intense attention due to its superior characteristics as compared with the centrosymmetric one, although probing the local quantum geometry in non-centrosymmetric topological material remains challenging. The non-linear Hall (NLH) effect provides an ideal tool to investigate the local quantum geometry. Here, we report a non-centrosymmetric topological phase in ZrTe5, probed by using the NLH effect. The angle-resolved and temperature-dependent NLH measurement reveals the inversion and ab-plane mirror symmetries breaking at <30 K, consistently with our theoretical calculation. Our findings identify a new non-centrosymmetric phase of ZrTe5 and provide a platform to probe and control local quantum geometry via crystal symmetries.
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Affiliation(s)
- Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Jing-Yang You
- Department of Physics, National University of Singapore, Singapore 117551
| | - Aifeng Wang
- Low Temperature Physics Laboratory, College of Physics and Center for Quantum Materials and Devices, Chongqing University, Chongqing 401331
| | - Xiaoyuan Zhou
- Low Temperature Physics Laboratory, College of Physics and Center for Quantum Materials and Devices, Chongqing University, Chongqing 401331
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Shen Lai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Yuan-Ping Feng
- Department of Physics, National University of Singapore, Singapore 117551
- Centre for Advanced 2D Materials, National University of Singapore, Singapore 117546
| | - Hsin Lin
- Institute of Physics, Academia Sinica, Taipei 11529
| | - Guoqing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Wei-bo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371
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10
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Staszek K, Calavalle F, Fert A, Gobbi M, Casanova F, Hueso LE. Microscale Chiral Rectennas for Energy Harvesting. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400729. [PMID: 38597368 DOI: 10.1002/adma.202400729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/04/2024] [Indexed: 04/11/2024]
Abstract
Wireless radiofrequency rectifiers have the potential to power the billions of "Internet of Things" (IoT) devices currently in use by effectively harnessing ambient electromagnetic radiation. However, the current technology relies on the implementation of rectifiers based on Schottky diodes, which exhibit limited capabilities for high-frequency and low-power applications. Consequently, they require an antenna to capture the incoming signal and amplify the input power, thereby limiting the possibility of miniaturizing devices to the millimeter scale. Here, the authors report wireless rectification at the GHz range in a microscale device built on single chiral tellurium with extremely low input powers. By studying the crystal symmetry and the temperature dependence of the rectification, the authors demonstrate that its origin is the intrinsic nonlinear conductivity of the material. Additionally, the unprecedented ability to modulate the rectification output by an electrostatic gate is shown. These results open the path to developing tuneable microscale wireless rectifiers with a single material.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Witold Skowroński
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | - Kamil Staszek
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | | | - Albert Fert
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Basque Country, 20018, Spain
- Department of Advanced Polymers and Materials: Physics, Chemistry and Technology, Univesity of the Basque Country (UPV/EHU), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
- Centro de Física de Materiales (CSIC-UPV/EHU) and Materials Physics Center (MPC), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
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11
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Han X, Liu Q, Wang Y, Niu R, Qu Z, Wang Z, Li Z, Han C, Watanabe K, Taniguchi T, Song Z, Liu J, Mao J, Han Z, Chittari BL, Jung J, Gan Z, Lu J. Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moiré Superlattice. NANO LETTERS 2024; 24:6286-6295. [PMID: 38747346 DOI: 10.1021/acs.nanolett.4c00948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Moiré superlattices have become a fertile playground for topological Chern insulators, where the displacement field can tune the quantum geometry and Chern number of the topological band. However, in experiments, displacement field engineering of spontaneous symmetry-breaking Chern bands has not been demonstrated. Here in a rhombohedral trilayer graphene moiré superlattice, we use a thermodynamic probe and transport measurement to monitor the Chern number evolution as a function of the displacement field. At a quarter filling of the moiré band, a novel Chern number of three is unveiled to compete with the well-established number of two upon turning on the electric field and survives when the displacement field is sufficiently strong. The transition can be reconciled by a nematic instability on the Fermi surface due to the pseudomagnetic vector field potentials associated with moiré strain patterns. Our work opens more opportunities to active control of Chern numbers in van der Waals moiré systems.
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Affiliation(s)
- Xiangyan Han
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Qianling Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Yijie Wang
- International Center for Quantum Materials, Peking University, Beijing 100871, China
| | - Ruirui Niu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhuangzhuang Qu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhiyu Wang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhuoxian Li
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Chunrui Han
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Zhida Song
- International Center for Quantum Materials, Peking University, Beijing 100871, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Bheema Lingam Chittari
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur 741246, West Bengal, India
| | - Jeil Jung
- Department of Physics, University of Seoul, Seoul 02504, Korea
- Department of Smart Cities, University of Seoul, Seoul 02504, Korea
| | - Zizhao Gan
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jianming Lu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
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12
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Zhong J, Zhang S, Duan J, Peng H, Feng Q, Hu Y, Wang Q, Mao J, Liu J, Yao Y. Effective Manipulation of a Colossal Second-Order Transverse Response in an Electric-Field-Tunable Graphene Moiré System. NANO LETTERS 2024; 24:5791-5798. [PMID: 38695400 DOI: 10.1021/acs.nanolett.4c00933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The second-order nonlinear transport illuminates a frequency-doubling response emerging in quantum materials with a broken inversion symmetry. The two principal driving mechanisms, the Berry curvature dipole and the skew scattering, reflect various information including ground-state symmetries, band dispersions, and topology of electronic wave functions. However, effective manipulation of them in a single system has been lacking, hindering the pursuit of strong responses. Here, we report on the effective manipulation of the two mechanisms in a single graphene moiré superlattice, AB-BA stacked twisted double bilayer graphene. Most saliently, by virtue of the high tunability of moiré band structures and scattering rates, a record-high second-order transverse conductivity ∼ 510 μm S V-1 is observed, which is orders of magnitude higher than any reported values in the literature. Our findings establish the potential of electrically tunable graphene moiré systems for nonlinear transport manipulations and applications.
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Affiliation(s)
- Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Shihao Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yuqing Hu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qinsheng Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
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13
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Zhou BT, Pathak V, Franz M. Quantum-Geometric Origin of Out-of-Plane Stacking Ferroelectricity. PHYSICAL REVIEW LETTERS 2024; 132:196801. [PMID: 38804928 DOI: 10.1103/physrevlett.132.196801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 11/16/2023] [Accepted: 04/10/2024] [Indexed: 05/29/2024]
Abstract
Stacking ferroelectricity (SFE) has been discovered in a wide range of van der Waals materials and holds promise for applications, including photovoltaics and high-density memory devices. We show that the microscopic origin of out-of-plane stacking ferroelectric polarization can be generally understood as a consequence of a nontrivial Berry phase borne out of an effective Su-Schrieffer-Heeger model description with broken sublattice symmetry, thus elucidating the quantum-geometric origin of polarization in the extremely nonperiodic bilayer limit. Our theory applies to known stacking ferroelectrics such as bilayer transition-metal dichalcogenides in 3R and T_{d} phases, as well as general AB-stacked honeycomb bilayers with staggered sublattice potential. Our explanatory and self-consistent framework based on the quantum-geometric perspective establishes quantitative understanding of out-of-plane SFE materials beyond symmetry principles.
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Affiliation(s)
- Benjamin T Zhou
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Vedangi Pathak
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Marcel Franz
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
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14
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Lee JE, Wang A, Chen S, Kwon M, Hwang J, Cho M, Son KH, Han DS, Choi JW, Kim YD, Mo SK, Petrovic C, Hwang C, Park SY, Jang C, Ryu H. Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe 4. Nat Commun 2024; 15:3971. [PMID: 38729931 PMCID: PMC11087648 DOI: 10.1038/s41467-024-47643-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Accepted: 04/08/2024] [Indexed: 05/12/2024] Open
Abstract
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.
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Affiliation(s)
- Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics, Pusan National University, Busan, 46241, South Korea
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Aifeng Wang
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, 400044, China
| | - Shuzhang Chen
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
| | - Minseong Kwon
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Jinwoong Hwang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, 24341, South Korea
| | - Minhyun Cho
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Ki-Hoon Son
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Dong-Soo Han
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Young Duck Kim
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Cedomir Petrovic
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
- Shanghai Advanced Research in Physical Sciences, Shanghai, 201203, China
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan, 46241, South Korea.
| | - Se Young Park
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul, 06978, South Korea.
- Integrative Institute of Basic Sciences, Soongsil University, Seoul, 06978, South Korea.
| | - Chaun Jang
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
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15
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Xiong H, Nie X, Zhao L, Deng S. Engineering Symmetry Breaking in Twisted MoS 2-MoSe 2 Heterostructures for Optimal Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38709893 DOI: 10.1021/acsami.4c03767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Engineering symmetry breaking in thermoelectric materials holds promise for achieving an optimal thermoelectric efficiency. van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) provide critical opportunities for manipulating the intrinsic symmetry through in-plane symmetry breaking interlayer twists and out-of-plane symmetry breaking heterostructures. Herein, the symmetry-dependent thermoelectric properties of MoS2 and MoSe2 obtained via first-principles calculations are reported, yielding an advanced ZT of 2.96 at 700 K. The underlying mechanisms reveal that the in-plane symmetry breaking results in a lowest thermal conductivity of 1.96 W·m-1·K-1. Additionally, the electric properties can be significantly modulated through band flattening and bandgap alteration, stemming directly from the modified interlayer electronic coupling strength owing to spatial repulsion effects. In addition, out-of-plane symmetry breaking induces band splitting, leading to a decrease in the degeneracy and complex band structures. Consequently, the power factor experiences a notable enhancement from ∼1.32 to 1.71 × 10-2 W·m-1·K-2, which is attributed to the intricate spatial configuration of charge densities and the resulting intensified intralayer electronic coupling. Upon simultaneous implementation of in-plane and out-of-plane symmetry breaking, the TMDCs exhibit an indirect bandgap to direct bandgap transition compared to the pristine structure. This work demonstrates an avenue for optimizing thermoelectric performance of TMDCs through the implementation of symmetry breaking.
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Affiliation(s)
- Hanping Xiong
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Xianhua Nie
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Li Zhao
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Shuai Deng
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
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16
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Li C, Wang R, Zhang S, Qin Y, Ying Z, Wei B, Dai Z, Guo F, Chen W, Zhang R, Wang B, Wang X, Song F. Observation of giant non-reciprocal charge transport from quantum Hall states in a topological insulator. NATURE MATERIALS 2024:10.1038/s41563-024-01874-4. [PMID: 38641696 DOI: 10.1038/s41563-024-01874-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 03/19/2024] [Indexed: 04/21/2024]
Abstract
Symmetry breaking in quantum materials is of great importance and can lead to non-reciprocal charge transport. Topological insulators provide a unique platform to study non-reciprocal charge transport due to their surface states, especially quantum Hall states under an external magnetic field. Here we report the observation of non-reciprocal charge transport mediated by quantum Hall states in devices composed of the intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S, which is attributed to asymmetric scattering between quantum Hall states and Dirac surface states. A giant non-reciprocal coefficient of up to 2.26 × 105 A-1 is found. Our work not only reveals the properties of non-reciprocal charge transport of quantum Hall states in topological insulators but also paves the way for future electronic devices.
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Affiliation(s)
- Chunfeng Li
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Rui Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
- Hefei National Laboratory, Hefei, China
| | - Shuai Zhang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
| | - Yuyuan Qin
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Zhe Ying
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Boyuan Wei
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Zheng Dai
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Fengyi Guo
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Wei Chen
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
- Department of Physics, Xiamen University, Xiamen, China
| | - Baigeng Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
- Institute of Atom Manufacturing, Nanjing University, Suzhou, China.
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17
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Zhang KX, Ju H, Kim H, Cui J, Keum J, Park JG, Lee JS. Broken Inversion Symmetry in Van Der Waals Topological Ferromagnetic Metal Iron Germanium Telluride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312824. [PMID: 38161222 DOI: 10.1002/adma.202312824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Indexed: 01/03/2024]
Abstract
Inversion symmetry breaking is critical for many quantum effects and fundamental for spin-orbit torque, which is crucial for next-generation spintronics. Recently, a novel type of gigantic intrinsic spin-orbit torque is established in the topological van der Waals (vdW) magnet iron germanium telluride. However, it remains a puzzle because no clear evidence exists for interlayer inversion symmetry breaking. Here, the definitive evidence of broken inversion symmetry in iron germanium telluride directly measured by the second harmonic generation (SHG) technique is reported. The data show that the crystal symmetry reduces from centrosymmetric P63/mmc to noncentrosymmetric polar P3m1 space group, giving the threefold SHG pattern with dominant out-of-plane polarization. Additionally, the SHG response evolves from an isotropic pattern to a sharp threefold symmetry upon increasing Fe deficiency, mainly due to the transition from random defects to ordered Fe vacancies. Such SHG response is robust against temperature, ensuring unaltered crystalline symmetries above and below the ferromagnetic transition temperature. These findings add crucial new information to the understanding of this interesting vdW metal, iron germanium telluride: band topology, intrinsic spin-orbit torque, and topological vdW polar metal states.
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Affiliation(s)
- Kai-Xuan Zhang
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
| | - Hwiin Ju
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, South Korea
| | - Hyuncheol Kim
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Jingyuan Cui
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Jihoon Keum
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Je-Geun Park
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, South Korea
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18
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Chen Z, Qiu H, Cheng X, Cui J, Jin Z, Tian D, Zhang X, Xu K, Liu R, Niu W, Zhou L, Qiu T, Chen Y, Zhang C, Xi X, Song F, Yu R, Zhai X, Jin B, Zhang R, Wang X. Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe 2 thin films. Nat Commun 2024; 15:2605. [PMID: 38521797 PMCID: PMC10960839 DOI: 10.1038/s41467-024-46821-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2024] [Accepted: 03/12/2024] [Indexed: 03/25/2024] Open
Abstract
Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.
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Affiliation(s)
- Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Hongsong Qiu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xinjuan Cheng
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China
| | - Jizhe Cui
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zuanming Jin
- Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, University of Shanghai for Science and Technology, 200093, Shanghai, China
| | - Da Tian
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Kankan Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Liqi Zhou
- College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China
| | - Tianyu Qiu
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Caihong Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xiaoxiang Xi
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Fengqi Song
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Rong Yu
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xuechao Zhai
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China.
| | - Biaobing Jin
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China.
- Purple Mountain Laboratories, 211111, Nanjing, China.
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
- Department of Physics, Xiamen University, 361005, Xiamen, China.
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
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19
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Wang L, Zhu J, Chen H, Wang H, Liu J, Huang YX, Jiang B, Zhao J, Shi H, Tian G, Wang H, Yao Y, Yu D, Wang Z, Xiao C, Yang SA, Wu X. Orbital Magneto-Nonlinear Anomalous Hall Effect in Kagome Magnet Fe_{3}Sn_{2}. PHYSICAL REVIEW LETTERS 2024; 132:106601. [PMID: 38518320 DOI: 10.1103/physrevlett.132.106601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 11/14/2023] [Accepted: 12/20/2023] [Indexed: 03/24/2024]
Abstract
It has been theoretically predicted that perturbation of the Berry curvature by electromagnetic fields gives rise to intrinsic nonlinear anomalous Hall effects that are independent of scattering. Two types of nonlinear anomalous Hall effects are expected. The electric nonlinear Hall effect has recently begun to receive attention, while very few studies are concerned with the magneto-nonlinear Hall effect. Here, we combine experiment and first-principles calculations to show that the kagome ferromagnet Fe_{3}Sn_{2} displays such a magneto-nonlinear Hall effect. By systematic field angular and temperature-dependent transport measurements, we unambiguously identify a large anomalous Hall current that is linear in both applied in-plane electric and magnetic fields, utilizing a unique in-plane configuration. We clarify its dominant orbital origin and connect it to the magneto-nonlinear Hall effect. The effect is governed by the intrinsic quantum geometric properties of Bloch electrons. Our results demonstrate the significance of the quantum geometry of electron wave functions from the orbital degree of freedom and open up a new direction in Hall transport effects.
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Affiliation(s)
- Lujunyu Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Jiaojiao Zhu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Haiyun Chen
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Hui Wang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Jinjin Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yue-Xin Huang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- School of Sciences, Great Bay University, Dongguan 523000, China
| | - Bingyan Jiang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Jiaji Zhao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Hengjie Shi
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Guang Tian
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Haoyu Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, China
| | - Cong Xiao
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, China
| | - Shengyuan A Yang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Xiaosong Wu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, Jiangsu, China
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20
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Lihm JM, Park CH. Nonlinear Hall Effect from Long-Lived Valley-Polarizing Relaxons. PHYSICAL REVIEW LETTERS 2024; 132:106402. [PMID: 38518315 DOI: 10.1103/physrevlett.132.106402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 12/07/2023] [Accepted: 01/09/2024] [Indexed: 03/24/2024]
Abstract
The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of n-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.
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Affiliation(s)
- Jae-Mo Lihm
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
| | - Cheol-Hwan Park
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
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21
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Xiang L, Jin H, Wang J. Quantifying the photocurrent fluctuation in quantum materials by shot noise. Nat Commun 2024; 15:2012. [PMID: 38443381 PMCID: PMC10914713 DOI: 10.1038/s41467-024-46264-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 02/21/2024] [Indexed: 03/07/2024] Open
Abstract
The DC photocurrent can detect the topology and geometry of quantum materials without inversion symmetry. Herein, we propose that the DC shot noise (DSN), as the fluctuation of photocurrent operator, can also be a diagnostic of quantum materials. Particularly, we develop the quantum theory for DSNs in gapped systems and identify the shift and injection DSNs by dividing the second-order photocurrent operator into off-diagonal and diagonal contributions, respectively. Remarkably, we find that the DSNs can not be forbidden by inversion symmetry, while the constraint from time-reversal symmetry depends on the polarization of light. Furthermore, we show that the DSNs also encode the geometrical information of Bloch electrons, such as the Berry curvature and the quantum metric. Finally, guided by symmetry, we apply our theory to evaluate the DSNs in monolayer GeS and bilayer MoS2 with and without inversion symmetry and find that the DSNs can be larger in centrosymmetric phase.
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Affiliation(s)
- Longjun Xiang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Hao Jin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Jian Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- Department of Physics, The University of Science and Technology of China, Hefei, China.
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22
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Lim S, Singh S, Huang FT, Pan S, Wang K, Kim J, Kim J, Vanderbilt D, Cheong SW. Magnetochiral tunneling in paramagnetic Co 1/3NbS 2. Proc Natl Acad Sci U S A 2024; 121:e2318443121. [PMID: 38412131 DOI: 10.1073/pnas.2318443121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 01/25/2024] [Indexed: 02/29/2024] Open
Abstract
Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co1/3NbS2, the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.
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Affiliation(s)
- Seongjoon Lim
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Sobhit Singh
- Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
- Materials Science Program, University of Rochester, Rochester, NY 14627
| | - Fei-Ting Huang
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Shangke Pan
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
- State Key Laboratory Base of Novel Function Materials and Preparation Science, School of Material Sciences and Chemical Engineering, Ningbo University, Ningbo 315211, China
| | - Kefeng Wang
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Jaewook Kim
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Jinwoong Kim
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - David Vanderbilt
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Sang-Wook Cheong
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
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23
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Zhang NJ, Lin JX, Chichinadze DV, Wang Y, Watanabe K, Taniguchi T, Fu L, Li JIA. Angle-resolved transport non-reciprocity and spontaneous symmetry breaking in twisted trilayer graphene. NATURE MATERIALS 2024; 23:356-362. [PMID: 38388731 DOI: 10.1038/s41563-024-01809-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 01/16/2024] [Indexed: 02/24/2024]
Abstract
The identification and characterization of spontaneous symmetry breaking is central to our understanding of strongly correlated two-dimensional materials. In this work, we utilize the angle-resolved measurements of transport non-reciprocity to investigate spontaneous symmetry breaking in twisted trilayer graphene. By analysing the angular dependence of non-reciprocity in both longitudinal and transverse channels, we are able to identify the symmetry axis associated with the underlying electronic order. We report that a hysteretic rotation in the mirror axis can be induced by thermal cycles and a large current bias, supporting the spontaneous breaking of rotational symmetry. Moreover, the onset of non-reciprocity with decreasing temperature coincides with the emergence of orbital ferromagnetism. Combined with the angular dependence of the superconducting diode effect, our findings uncover a direct link between rotational and time-reversal symmetry breaking. These symmetry requirements point towards exchange-driven instabilities in momentum space as a possible origin for transport non-reciprocity in twisted trilayer graphene.
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Affiliation(s)
| | - Jiang-Xiazi Lin
- Department of Physics, Brown University, Providence, RI, USA
| | | | - Yibang Wang
- Department of Physics, Brown University, Providence, RI, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - J I A Li
- Department of Physics, Brown University, Providence, RI, USA.
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24
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Dai Y, Xiong J, Ge Y, Cheng B, Wang L, Wang P, Liu Z, Yan S, Zhang C, Xu X, Shi Y, Cheong SW, Xiao C, Yang SA, Liang SJ, Miao F. Interfacial magnetic spin Hall effect in van der Waals Fe 3GeTe 2/MoTe 2 heterostructure. Nat Commun 2024; 15:1129. [PMID: 38321042 PMCID: PMC10847462 DOI: 10.1038/s41467-024-45318-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2023] [Accepted: 01/19/2024] [Indexed: 02/08/2024] Open
Abstract
The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.
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Affiliation(s)
- Yudi Dai
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Junlin Xiong
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yanfeng Ge
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing, 210094, China.
| | - Lizheng Wang
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Pengfei Wang
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zenglin Liu
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Shengnan Yan
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Cuiwei Zhang
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Xianghan Xu
- Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, 08854, USA
| | - Youguo Shi
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Sang-Wook Cheong
- Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, 08854, USA
| | - Cong Xiao
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, SAR, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
| | - Shengyuan A Yang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, SAR, China
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
| | - Feng Miao
- National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
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25
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Wang H, Huang YX, Liu H, Feng X, Zhu J, Wu W, Xiao C, Yang SA. Orbital Origin of the Intrinsic Planar Hall Effect. PHYSICAL REVIEW LETTERS 2024; 132:056301. [PMID: 38364160 DOI: 10.1103/physrevlett.132.056301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 10/12/2023] [Accepted: 12/20/2023] [Indexed: 02/18/2024]
Abstract
Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity-the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by an orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials TaSb_{2}, NbAs_{2}, and SrAs_{3}. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials.
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Affiliation(s)
- Hui Wang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Yue-Xin Huang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- School of Sciences, Great Bay University, Dongguan 523000, China
- Great Bay Institute for Advanced Study, Dongguan 523000, China
| | - Huiying Liu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- School of Physics, Beihang University, Beijing 100191, China
| | - Xiaolong Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, D-01187 Dresden, Germany
| | - Jiaojiao Zhu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Weikang Wu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, China
| | - Cong Xiao
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Shengyuan A Yang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
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26
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Calavalle F, Tsirkin SS, Souza I, De Juan F, Chuvilin A, Fert A, Gobbi M, Casanova F, Hueso LE. Odd Nonlinear Conductivity under Spatial Inversion in Chiral Tellurium. PHYSICAL REVIEW LETTERS 2024; 132:046303. [PMID: 38335368 DOI: 10.1103/physrevlett.132.046303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 12/13/2023] [Indexed: 02/12/2024]
Abstract
Electrical transport in noncentrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a nonlinear conductivity emerges along specific crystallographic directions. This nonlinear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the nonlinear conductivity remain to be explored. Here, we report on a large, nonlinear conductivity in chiral tellurium. By measuring samples with opposite handedness, we demonstrate that the nonlinear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the nonlinear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral tellurium as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and nonlinear transport; but also to develop wireless rectifiers and energy-harvesting chiral devices.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Witold Skowroński
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- AGH University of Krakow, Institute of Electronics, 30-059 Kraków, Poland
| | - F Calavalle
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Stepan S Tsirkin
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Ivo Souza
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fernando De Juan
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Albert Fert
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department of Materials Physics UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
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27
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Kaplan D, Holder T, Yan B. Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry. PHYSICAL REVIEW LETTERS 2024; 132:026301. [PMID: 38277599 DOI: 10.1103/physrevlett.132.026301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 07/09/2023] [Accepted: 11/16/2023] [Indexed: 01/28/2024]
Abstract
The quantum geometry has significant consequences in determining transport and optical properties in quantum materials. Here, we use a semiclassical formalism coupled with perturbative corrections unifying the nonlinear anomalous Hall effect and nonreciprocal magnetoresistance (longitudinal resistance) from the quantum geometry. In the dc limit, both transverse and longitudinal nonlinear conductivities include a term due to the normalized quantum metric dipole. The quantum metric contribution is intrinsic and does not scale with the quasiparticle lifetime. We demonstrate the coexistence of a nonlinear anomalous Hall effect and nonreciprocal magnetoresistance in films of the doped antiferromagnetic topological insulator MnBi_{2}Te_{4}. Our work indicates that both longitudinal and transverse nonlinear transport provide a sensitive probe of the quantum geometry in solids.
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Affiliation(s)
- Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
- Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Tel Aviv, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
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28
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Shin D, Rubio A, Tang P. Light-Induced Ideal Weyl Semimetal in HgTe via Nonlinear Phononics. PHYSICAL REVIEW LETTERS 2024; 132:016603. [PMID: 38242673 DOI: 10.1103/physrevlett.132.016603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 11/27/2023] [Accepted: 11/29/2023] [Indexed: 01/21/2024]
Abstract
Interactions between light and matter allow the realization of out-of-equilibrium states in quantum solids. In particular, nonlinear phononics is one of the most efficient approaches to realizing the stationary electronic state in nonequilibrium. Herein, by an extended ab initio molecular dynamics method, we identify that long-lived light-driven quasistationary geometry could stabilize the topological nature in the material family of HgTe compounds. We show that coherent excitation of the infrared-active phonon mode results in a distortion of the atomic geometry with a lifetime of several picoseconds. We show that four Weyl points are located exactly at the Fermi level in this nonequilibrium geometry, making it an ideal long-lived metastable Weyl semimetal. We propose that such a metastable topological phase can be identified by photoelectron spectroscopy of the Fermi arc surface states or ultrafast pump-probe transport measurements of the nonlinear Hall effect.
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Affiliation(s)
- Dongbin Shin
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - Angel Rubio
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
- Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del País Vasco, UPV/EHU-20018 San Sebastián, Spain
- Center for Computational Quantum Physics (CCQ), The Flatiron Institute, 162 Fifth Avenue, New York, New York 10010, USA
| | - Peizhe Tang
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, 22761 Hamburg, Germany
- School of Materials Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
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29
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Lu XF, Zhang CP, Wang N, Zhao D, Zhou X, Gao W, Chen XH, Law KT, Loh KP. Nonlinear transport and radio frequency rectification in BiTeBr at room temperature. Nat Commun 2024; 15:245. [PMID: 38172558 PMCID: PMC10764878 DOI: 10.1038/s41467-023-44439-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 12/13/2023] [Indexed: 01/05/2024] Open
Abstract
Materials showing second-order nonlinear transport under time reversal symmetry can be used for Radio Frequency (RF) rectification, but practical application demands room temperature operation and sensitivity to microwatts level RF signals in the ambient. In this study, we demonstrate that BiTeBr exhibits a giant nonlinear response which persists up to 350 K. Through scaling and symmetry analysis, we show that skew scattering is the dominant mechanism. Additionally, the sign of the nonlinear response can be electrically switched by tuning the Fermi energy. Theoretical analysis suggests that the large Rashba spin-orbit interactions (SOI), which gives rise to the chirality of the Bloch electrons, provide the microscopic origin of the observed nonlinear response. Our BiTeBr rectifier is capable of rectifying radiation within the frequency range of 0.2 to 6 gigahertz at room temperature, even at extremely low power levels of -15 dBm, and without the need for external biasing. Our work highlights that materials exhibiting large Rashba SOI have the potential to exhibit nonlinear responses at room temperature, making them promising candidates for harvesting high-frequency and low-power ambient electromagnetic energy.
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Affiliation(s)
- Xiu Fang Lu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Cheng-Ping Zhang
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Dan Zhao
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xian Hui Chen
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - K T Law
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China.
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore.
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30
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Zhai J, Trama M, Liu H, Zhu Z, Zhu Y, Perroni CA, Citro R, He P, Shen J. Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO 3 Based Two-Dimensional Electron Gas. NANO LETTERS 2023; 23:11892-11898. [PMID: 38079285 DOI: 10.1021/acs.nanolett.3c03948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion and symmetry breaking. In this work, we report large nonlinear transverse conductivities in the LaAlO3/KTaO3 interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear transverse conductivity with linear longitudinal conductivity and 3-fold symmetry. Moreover, gate-tunable nonlinear transport with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triplet at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. Nonlinear transport offers a new pathway to probe the Berry curvature at oxide interfaces and facilitates new applications in oxide nonlinear electronics.
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Affiliation(s)
- Jinfeng Zhai
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Mattia Trama
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
- Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstr. 20, 01069 Dresden, Germany
| | - Hao Liu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zhifei Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Yinyan Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Carmine Antonio Perroni
- Physics Department "Ettore Pancini", Universitá Degli Studi di Napoli "Federico II", Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- CNR-SPIN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- INFN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
| | - Roberta Citro
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
| | - Pan He
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
- Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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31
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Wu F, Xu Q, Wang Q, Chu Y, Li L, Tang J, Liu J, Tian J, Ji Y, Liu L, Yuan Y, Huang Z, Zhao J, Zan X, Watanabe K, Taniguchi T, Shi D, Gu G, Xu Y, Xian L, Yang W, Du L, Zhang G. Giant Correlated Gap and Possible Room-Temperature Correlated States in Twisted Bilayer MoS_{2}. PHYSICAL REVIEW LETTERS 2023; 131:256201. [PMID: 38181343 DOI: 10.1103/physrevlett.131.256201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2023] [Revised: 08/21/2023] [Accepted: 11/21/2023] [Indexed: 01/07/2024]
Abstract
Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report evidence of possible room-temperature correlated electronic states and layer-hybridized SU(4) model simulator in AB-stacked MoS_{2} homobilayer moiré superlattices. Correlated insulating states at moiré band filling factors v=1, 2, 3 are unambiguously established in twisted bilayer MoS_{2}. Remarkably, the correlated electronic state at v=1 shows a giant correlated gap of ∼126 meV and may persist up to a record-high critical temperature over 285 K. The realization of a possible room-temperature correlated state with a large correlated gap in twisted bilayer MoS_{2} can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moiré superlattice effects on electronic correlations. Furthermore, extreme large nonlinear Hall responses up to room temperature are uncovered near correlated electronic states, demonstrating the quantum geometry of moiré flat conduction band.
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Affiliation(s)
- Fanfan Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiaoling Xu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- College of Physics and Electronic Engineering, Center for Computational Sciences, Sichuan Normal University, Chengdu 610068, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yanbang Chu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lu Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jieying Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yiru Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Le Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yalong Yuan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiaojiao Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaozhou Zan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Gangxu Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lede Xian
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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32
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Zhao TY, Wang AQ, Ye XG, Liu XY, Liao X, Liao ZM. Gate-Tunable Berry Curvature Dipole Polarizability in Dirac Semimetal Cd_{3}As_{2}. PHYSICAL REVIEW LETTERS 2023; 131:186302. [PMID: 37977647 DOI: 10.1103/physrevlett.131.186302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2022] [Revised: 07/10/2023] [Accepted: 10/13/2023] [Indexed: 11/19/2023]
Abstract
We reveal the gate-tunable Berry curvature dipole polarizability in Dirac semimetal Cd_{3}As_{2} nanoplates through measurements of the third-order nonlinear Hall effect. Under an applied electric field, the Berry curvature exhibits an asymmetric distribution, forming a field-induced Berry curvature dipole, resulting in a measurable third-order Hall voltage with a cubic relationship to the longitudinal electric field. Notably, the magnitude and polarity of this third-order nonlinear Hall effect can be effectively modulated by gate voltages. Furthermore, our scaling relation analysis demonstrates that the sign of the Berry curvature dipole polarizability changes when tuning the Fermi level across the Dirac point, in agreement with theoretical calculations. The results highlight the gate control of nonlinear quantum transport in Dirac semimetals, paving the way for promising advancements in topological electronics.
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Affiliation(s)
- Tong-Yang Zhao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - An-Qi Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - Xing-Guo Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - Xing-Yu Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - Xin Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - Zhi-Min Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
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33
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Zhang ZF, Zhu ZG, Su G. Symmetry dictionary on charge and spin nonlinear responses for all magnetic point groups with nontrivial topological nature. Natl Sci Rev 2023; 10:nwad104. [PMID: 37818112 PMCID: PMC10561712 DOI: 10.1093/nsr/nwad104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Revised: 11/29/2022] [Accepted: 02/15/2023] [Indexed: 10/12/2023] Open
Abstract
Recently, charge or spin nonlinear transport with nontrivial topological properties in crystal materials has attracted much attention. In this paper, we perform a comprehensive symmetry analysis for all 122 magnetic point groups (MPGs) and provide a useful dictionary for charge and spin nonlinear transport from the Berry curvature dipole, Berry connection polarizability and Drude term with nontrivial topological nature. The results are obtained by conducting a full symmetry investigation of the matrix representations of six nonlinear response tensors. We further identify every MPG that can accommodate two or three of the nonlinear tensors. The present work gives a solid theoretical basis for an overall understanding of the second-order nonlinear responses in realistic materials.
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Affiliation(s)
- Zhi-Fan Zhang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen-Gang Zhu
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Gang Su
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
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34
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Zhang Y, Kamiya K, Yamamoto T, Sakano M, Yang X, Masubuchi S, Okazaki S, Shinokita K, Chen T, Aso K, Yamada-Takamura Y, Oshima Y, Watanabe K, Taniguchi T, Matsuda K, Sasagawa T, Ishizaka K, Machida T. Symmetry Engineering in Twisted Bilayer WTe 2. NANO LETTERS 2023; 23:9280-9286. [PMID: 37811843 DOI: 10.1021/acs.nanolett.3c02327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/10/2023]
Abstract
The fabrication of artificial structures using a twisted van der Waals assembly has been a key technique for recent advancements in the research of two-dimensional (2D) materials. To date, various exotic phenomena have been observed thanks to the modified electron correlation or moiré structure controlled by the twist angle. However, the twisted van der Waals assembly has further potential to modulate the physical properties by controlling the symmetry. In this study, we fabricated twisted bilayer WTe2 and demonstrated that the twist angle successfully controls the spatial inversion symmetry and hence the spin splitting in the band structure. Our results reveal the further potential of a twisted van der Waals assembly, suggesting the feasibility of pursuing new physical phenomena in 2D materials based on the control of symmetry.
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Affiliation(s)
- Yijin Zhang
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Keisuke Kamiya
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Takato Yamamoto
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Masato Sakano
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Xiaohan Yang
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Satoru Masubuchi
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Shota Okazaki
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Keisuke Shinokita
- Institute of Advanced Energy, Kyoto University, Kyoto 611-0011, Japan
| | - Tongmin Chen
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Kohei Aso
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Yukiko Yamada-Takamura
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Yoshifumi Oshima
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy, Kyoto University, Kyoto 611-0011, Japan
| | - Takao Sasagawa
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Kyoko Ishizaka
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Tomoki Machida
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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35
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Jin Z, Yao X, Wang Z, Yuan HY, Zeng Z, Wang W, Cao Y, Yan P. Nonlinear Topological Magnon Spin Hall Effect. PHYSICAL REVIEW LETTERS 2023; 131:166704. [PMID: 37925727 DOI: 10.1103/physrevlett.131.166704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 04/03/2023] [Accepted: 09/15/2023] [Indexed: 11/07/2023]
Abstract
When a magnon passes through two-dimensional magnetic textures, it will experience a fictitious magnetic field originating from the 3×3 skew-symmetric gauge fields. To date, only one of the three independent components of the gauge fields has been found to play a role in generating the fictitious magnetic field, while the other two are perfectly hidden. In this Letter, we show that they are concealed in the nonlinear magnon transport in magnetic textures. Without loss of generality, we theoretically study the nonlinear magnon-skyrmion interaction in antiferromagnets. By analyzing the scattering features of three-magnon processes between the circularly polarized incident magnon and breathing skyrmion, we predict a giant Hall angle of both the confluence and splitting modes. Furthermore, we find that the Hall angle reverses its sign when one switches the handedness of the incident magnons. We dub this the nonlinear topological magnon spin Hall effect. Our findings are deeply rooted in the bosonic nature of magnons that the particle number is not conserved, which has no counterpart in low-energy fermionic systems and may open the door for probing gauge fields by nonlinear means.
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Affiliation(s)
- Zhejunyu Jin
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xianglong Yao
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhenyu Wang
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - H Y Yuan
- Institute for Theoretical Physics, Utrecht University, 3584 CC Utrecht, Netherlands
| | - Zhaozhuo Zeng
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Weiwei Wang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Yunshan Cao
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Peng Yan
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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36
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Wu S, Fei Z, Sun Z, Yi Y, Xia W, Yan D, Guo Y, Shi Y, Yan J, Cobden DH, Liu WT, Xu X, Wu S. Extrinsic Nonlinear Kerr Rotation in Topological Materials under a Magnetic Field. ACS NANO 2023; 17:18905-18913. [PMID: 37767802 DOI: 10.1021/acsnano.3c04153] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/29/2023]
Abstract
Topological properties in quantum materials are often governed by symmetry and tuned by crystal structure and external fields, and hence, symmetry-sensitive nonlinear optical measurements in a magnetic field are a valuable probe. Here, we report nonlinear magneto-optical second harmonic generation (SHG) studies of nonmagnetic topological materials including bilayer WTe2, monolayer WSe2, and bulk TaAs. The polarization-resolved patterns of optical SHG under a magnetic field show nonlinear Kerr rotation in these time-reversal symmetric materials. For materials with 3-fold rotational symmetric lattice structure, the SHG polarization pattern rotates just slightly in a magnetic field, whereas in those with mirror or 2-fold rotational symmetry, the SHG polarization pattern rotates greatly and distorts. These different magneto-SHG characters can be understood by considering the superposition of the magnetic field-induced time-noninvariant nonlinear optical tensor and the crystal-structure-based time-invariant counterpart. The situation is further clarified by scrutinizing the Faraday rotation, whose subtle interplay with crystal symmetry accounts for the diverse behavior of the extrinsic nonlinear Kerr rotation in different materials. Our work illustrates the application of magneto-SHG techniques to directly probe nontrivial topological properties, and underlines the importance of minimizing extrinsic nonlinear Kerr rotation in polarization-resolved magneto-optical studies.
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Affiliation(s)
- Shuang Wu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zaiyao Fei
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Zeyuan Sun
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yangfan Yi
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wei Xia
- School of Physical Science and Technology, and ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Dayu Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yanfeng Guo
- School of Physical Science and Technology, and ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiaqiang Yan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David H Cobden
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Wei-Tao Liu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Shiwei Wu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, Shanghai 200232, China
- Institute for Nanoelectronic Devices and Quantum Computing, and Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
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37
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Niu C, Qiu G, Wang Y, Tan P, Wang M, Jian J, Wang H, Wu W, Ye PD. Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium. NANO LETTERS 2023; 23:8445-8453. [PMID: 37677143 DOI: 10.1021/acs.nanolett.3c01797] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/09/2023]
Abstract
Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by a solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hydrothermally grown 2D Te is identified and analyzed by hot sulfuric acid etching and high-angle tilted high-resolution scanning transmission electron microscopy. The gate-tunable nonlinear electrical responses, including the nonreciprocal electrical transport in the longitudinal direction and the nonlinear planar Hall effect in the transverse direction, are observed in 2D Te under a magnetic field. Moreover, the nonlinear electrical responses have opposite signs in left- and right-handed 2D Te due to the opposite spin polarizations ensured by the chiral symmetry. The fundamental relationship between the spin-orbit coupling and the crystal symmetry in two enantiomers provides a viable platform for realizing chirality-based electronic devices by introducing the degree of freedom of chirality into electron transport.
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Affiliation(s)
- Chang Niu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Gang Qiu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yixiu Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pukun Tan
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Mingyi Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jie Jian
- School of Materials Science and Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Materials Science and Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peide D Ye
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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38
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Li Z, Huang J, Zhou L, Xu Z, Qin F, Chen P, Sun X, Liu G, Sui C, Qiu C, Lu Y, Gou H, Xi X, Ideue T, Tang P, Iwasa Y, Yuan H. An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces. Nat Commun 2023; 14:5568. [PMID: 37689758 PMCID: PMC10492835 DOI: 10.1038/s41467-023-41295-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2023] [Accepted: 08/29/2023] [Indexed: 09/11/2023] Open
Abstract
Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP2, with non-symmorphic twofold-rotational C2 symmetry as a gate medium which can break the original threefold-rotational C3 symmetry of MoS2 to achieve unexpected linearly-polarized photoluminescence and anisotropic second harmonic generation at SiP2/MoS2 interfaces. In contrast to the isotropic behavior of pristine MoS2, a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP2-gated MoS2 transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. Our results provide a strategy for generating exotic functionalities at dielectric/semiconductor interfaces via symmetry engineering.
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Affiliation(s)
- Zeya Li
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Ling Zhou
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Zian Xu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Xiaojun Sun
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Gan Liu
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Chengqi Sui
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Yangfan Lu
- College of Materials Sciences and Engineering, National Engineering Research Center for Magnesium Alloys, Chongqing University, Chongqing, 400030, China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100094, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Toshiya Ideue
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan.
- Institute for Solid State Physics, The University of Tokyo, Chiba, 277-8581, Japan.
| | - Peizhe Tang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, Hamburg, 22761, Germany.
| | - Yoshihiro Iwasa
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
- RIKEN Center for Emergent Matter Science, Hirosawa 2-1, Wako, 351-0198, Japan
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China.
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39
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Wang N, Kaplan D, Zhang Z, Holder T, Cao N, Wang A, Zhou X, Zhou F, Jiang Z, Zhang C, Ru S, Cai H, Watanabe K, Taniguchi T, Yan B, Gao W. Quantum-metric-induced nonlinear transport in a topological antiferromagnet. Nature 2023; 621:487-492. [PMID: 37385423 DOI: 10.1038/s41586-023-06363-3] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 06/22/2023] [Indexed: 07/01/2023]
Abstract
The Berry curvature and quantum metric are the imaginary part and real part, respectively, of the quantum geometric tensor, which characterizes the topology of quantum states1. The Berry curvature is known to generate a number of important transport phenomena, such as the quantum Hall effect and the anomalous Hall effect2,3; however, the consequences of the quantum metric have rarely been probed by transport measurements. Here we report the observation of quantum-metric-induced nonlinear transport, including both a nonlinear anomalous Hall effect and a diode-like non-reciprocal longitudinal response, in thin films of a topological antiferromagnet, MnBi2Te4. Our observations reveal that the transverse and longitudinal nonlinear conductivities reverse signs when reversing the antiferromagnetic order, diminish above the Néel temperature and are insensitive to disorder scattering, thus verifying their origin in the band-structure topology. They also flip signs between electron- and hole-doped regions, in agreement with theoretical calculations. Our work provides a means to probe the quantum metric through nonlinear transport and to design magnetic nonlinear devices.
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Affiliation(s)
- Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Ning Cao
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, China
| | - Aifeng Wang
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, China
| | - Xiaoyuan Zhou
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, China
| | - Feifei Zhou
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Zhengzhi Jiang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Chusheng Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore.
- Centre for Quantum Technologies, National University of Singapore, Singapore, Singapore.
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40
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Mandal M, Drucker NC, Siriviboon P, Nguyen T, Boonkird A, Lamichhane TN, Okabe R, Chotrattanapituk A, Li M. Topological Superconductors from a Materials Perspective. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2023; 35:6184-6200. [PMID: 37637011 PMCID: PMC10448998 DOI: 10.1021/acs.chemmater.3c00713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 07/12/2023] [Indexed: 08/29/2023]
Abstract
Topological superconductors (TSCs) have garnered significant research and industry attention in the past two decades. By hosting Majorana bound states which can be used as qubits that are robust against local perturbations, TSCs offer a promising platform toward (nonuniversal) topological quantum computation. However, there has been a scarcity of TSC candidates, and the experimental signatures that identify a TSC are often elusive. In this Perspective, after a short review of the TSC basics and theories, we provide an overview of the TSC materials candidates, including natural compounds and synthetic material systems. We further introduce various experimental techniques to probe TSCs, focusing on how a system is identified as a TSC candidate and why a conclusive answer is often challenging to draw. We conclude by calling for new experimental signatures and stronger computational support to accelerate the search for new TSC candidates.
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Affiliation(s)
- Manasi Mandal
- Quantum
Measurement Group, MIT, Cambridge, Massachusetts 02139, United States
- Department
of Nuclear Science and Engineering, MIT, Cambridge, Massachusetts 02139, United States
| | - Nathan C. Drucker
- Quantum
Measurement Group, MIT, Cambridge, Massachusetts 02139, United States
- School
of Engineering and Applied Sciences, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Phum Siriviboon
- Department
of Physics, MIT, Cambridge, Massachusetts 02139, United States
| | - Thanh Nguyen
- Quantum
Measurement Group, MIT, Cambridge, Massachusetts 02139, United States
- Department
of Nuclear Science and Engineering, MIT, Cambridge, Massachusetts 02139, United States
| | - Artittaya Boonkird
- Quantum
Measurement Group, MIT, Cambridge, Massachusetts 02139, United States
- Department
of Nuclear Science and Engineering, MIT, Cambridge, Massachusetts 02139, United States
| | - Tej Nath Lamichhane
- Quantum
Measurement Group, MIT, Cambridge, Massachusetts 02139, United States
- Department
of Nuclear Science and Engineering, MIT, Cambridge, Massachusetts 02139, United States
| | - Ryotaro Okabe
- Quantum
Measurement Group, MIT, Cambridge, Massachusetts 02139, United States
- Department
of Chemistry, MIT, Cambridge, Massachusetts 02139, United States
| | - Abhijatmedhi Chotrattanapituk
- Quantum
Measurement Group, MIT, Cambridge, Massachusetts 02139, United States
- Department
of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts 02139, United States
| | - Mingda Li
- Quantum
Measurement Group, MIT, Cambridge, Massachusetts 02139, United States
- Department
of Nuclear Science and Engineering, MIT, Cambridge, Massachusetts 02139, United States
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41
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Ma D, Arora A, Vignale G, Song JCW. Anomalous Skew-Scattering Nonlinear Hall Effect and Chiral Photocurrents in PT-Symmetric Antiferromagnets. PHYSICAL REVIEW LETTERS 2023; 131:076601. [PMID: 37656837 DOI: 10.1103/physrevlett.131.076601] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 05/31/2023] [Accepted: 07/11/2023] [Indexed: 09/03/2023]
Abstract
Berry curvature and skew scattering play central roles in determining both the linear and nonlinear anomalous Hall effects. Yet in PT-symmetric antiferromagnetic metals, Hall effects from either intrinsic Berry curvature mediated anomalous velocity or the conventional skew-scattering process individually vanish. Here we reveal an unexpected nonlinear Hall effect that relies on both Berry curvature and skew-scattering working in cooperation. This anomalous skew-scattering nonlinear Hall effect (ASN) is PT even and dominates the low-frequency nonlinear Hall effect for PT-symmetric antiferromagnetic metals. Surprisingly, we find that in addition to its Hall response, ASN produces helicity dependent photocurrents, in contrast to other known PT-even nonlinearities in metals that are helicity blind. This characteristic enables us to isolate ASN and establishes new photocurrent tools to interrogate the antiferromagnetic order of PT-symmetric metals.
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Affiliation(s)
- Da Ma
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Arpit Arora
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Giovanni Vignale
- The Institute for Functional Intelligent Materials (I-FIM), National University of Singapore, 4 Science Drive 2, Singapore 117544
| | - Justin C W Song
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
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42
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Xie Y, Morgenstein J, Bobay BG, Song R, Caturello NAMS, Sercel PC, Blum V, Mitzi DB. Chiral Cation Doping for Modulating Structural Symmetry of 2D Perovskites. J Am Chem Soc 2023; 145:17831-17844. [PMID: 37531203 DOI: 10.1021/jacs.3c04832] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Cation mixing in two-dimensional (2D) hybrid organic-inorganic perovskite (HOIP) structures represents an important degree of freedom for modifying organic templating effects and tailoring inorganic structures. However, the limited number of known cation-mixed 2D HOIP systems generally employ a 1:1 cation ratio for stabilizing the 2D perovskite structure. Here, we demonstrate a chiral-chiral mixed-cation system wherein a controlled small amount (<10%) of chiral cation S-2-MeBA (S-2-MeBA = (S)-(-)-2-methylbutylammonium) can be doped into (S-BrMBA)2PbI4 (S-BrMBA = (S)-(-)-4-bromo-α-methylbenzylammonium), modulating the structural symmetry from a higher symmetry (C2) to the lowest symmetry state (P1). This structural change occurs when the concentration of S-2-MeBA, measured by solution nuclear magnetic resonance, exceeds a critical level─specifically, for 1.4 ± 0.6%, the structure remains as C2, whereas 3.9 ± 1.4% substitution induces the structure change to P1 (this structure is stable to ∼7% substitution). Atomic occupancy analysis suggests that one specific S-BrMBA cation site is preferentially substituted by S-2-MeBA in the unit cell. Density functional theory calculations indicate that the spin splitting along different k-paths can be modulated by cation doping. A true circular dichroism band at the exciton energy of the 3.9% doping phase shows polarity inversion and a ∼45 meV blue shift of the Cotton-effect-type line-shape relative to (S-BrMBA)2PbI4. A trend toward suppressed melting temperature with higher doping concentration is also noted. The chiral cation doping system and the associated doping-concentration-induced structural transition provide a material design strategy for modulating and enhancing those emergent properties that are sensitive to different types of symmetry breaking.
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Affiliation(s)
- Yi Xie
- Thomas Lord Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States
- University Program in Materials Science and Engineering, Duke University, Durham, North Carolina 27708, United States
| | - Jack Morgenstein
- Thomas Lord Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States
| | - Benjamin G Bobay
- Duke University NMR Center, Duke University Medical Center, Durham, North Carolina 27710, United States
| | - Ruyi Song
- Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
| | | | - Peter C Sercel
- Center for Hybrid Organic Inorganic Semiconductors for Energy, Golden, Colorado 80401, United States
| | - Volker Blum
- Thomas Lord Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States
- Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
| | - David B Mitzi
- Thomas Lord Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States
- Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
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43
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Huang M, Wu Z, Zhang X, Feng X, Zhou Z, Wang S, Chen Y, Cheng C, Sun K, Meng ZY, Wang N. Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2023; 131:066301. [PMID: 37625039 DOI: 10.1103/physrevlett.131.066301] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 04/14/2023] [Accepted: 06/26/2023] [Indexed: 08/27/2023]
Abstract
Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.
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Affiliation(s)
- Meizhen Huang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Zefei Wu
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Xu Zhang
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
| | - Xuemeng Feng
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Zishu Zhou
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Shi Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yong Chen
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Kai Sun
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Zi Yang Meng
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
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44
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Wang J, Zeng H, Duan W, Huang H. Intrinsic Nonlinear Hall Detection of the Néel Vector for Two-Dimensional Antiferromagnetic Spintronics. PHYSICAL REVIEW LETTERS 2023; 131:056401. [PMID: 37595209 DOI: 10.1103/physrevlett.131.056401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Revised: 04/29/2023] [Accepted: 06/30/2023] [Indexed: 08/20/2023]
Abstract
The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspires us to exploit 2D antiferromagnetic spintronics. However, the detection of the Néel vector in 2D antiferromagnets remains a great challenge because the measured signals usually decrease significantly in the 2D limit. Here we propose that the Néel vector of 2D antiferromagnets can be efficiently detected by the intrinsic nonlinear Hall (INH) effect which exhibits unexpected significant signals. As a specific example, we show that the INH conductivity of the monolayer manganese chalcogenides MnX (X=S, Se, Te) can reach the order of nm·mA/V^{2}, which is orders of magnitude larger than experimental values of paradigmatic antiferromagnetic spintronic materials. The INH effect can be accurately controlled by shifting the chemical potential around the band edge, which is experimentally feasible via electric gating or charge doping. Moreover, we explicitly demonstrate its 2π-periodic dependence on the Néel vector orientation based on an effective k·p model. Our findings enable flexible design schemes and promising material platforms for spintronic memory device applications based on 2D antiferromagnets.
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Affiliation(s)
- Jizhang Wang
- School of Physics, Peking University, Beijing 100871, China
| | - Hui Zeng
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Huaqing Huang
- School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Center for High Energy Physics, Peking University, Beijing 100871, China
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45
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Kang K, Zhao W, Zeng Y, Watanabe K, Taniguchi T, Shan J, Mak KF. Switchable moiré potentials in ferroelectric WTe 2/WSe 2 superlattices. NATURE NANOTECHNOLOGY 2023; 18:861-866. [PMID: 37106050 DOI: 10.1038/s41565-023-01376-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2022] [Accepted: 03/17/2023] [Indexed: 06/19/2023]
Abstract
Moiré materials with superlattice periodicity many times the atomic length scale have shown strong electronic correlations and band topology with unprecedented tunability. Non-volatile control of the moiré potentials could allow on-demand switching of superlattice effects but has remained challenging to achieve. Here we demonstrate the switching of the correlated and moiré band insulating states, and the associated nonlinear anomalous Hall effect, by the ferroelectric effect. This is achieved in a ferroelectric WTe2 bilayer of the Td structure with a centred-rectangular moiré superlattice induced by interfacing with a WSe2 monolayer of the H structure. The results can be understood in terms of polarization-dependent charge transfer between two WTe2 monolayers, in which the interfacial layer has a much stronger moiré potential depth; ferroelectric switching thus turns on and off the moiré insulating states. Our study demonstrates the potential for creating new functional moiré materials by incorporating intrinsic symmetry-breaking orders.
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Affiliation(s)
- Kaifei Kang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Wenjin Zhao
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA
| | - Yihang Zeng
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | | | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
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46
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Duan S, Qin F, Chen P, Yang X, Qiu C, Huang J, Liu G, Li Z, Bi X, Meng F, Xi X, Yao J, Ideue T, Lian B, Iwasa Y, Yuan H. Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces. NATURE NANOTECHNOLOGY 2023; 18:867-874. [PMID: 37322146 DOI: 10.1038/s41565-023-01417-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 05/14/2023] [Indexed: 06/17/2023]
Abstract
The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The theoretical rationale is that the BCD can be generated at certain symmetry-mismatched van der Waals heterointerfaces even though each material has no BCD in its band structure. However, experimental confirmation of such a BCD induced via breaking of the interfacial symmetry remains elusive. Here we demonstrate a universal strategy for BCD generation and observe BCD-induced gate-tunable spin-polarized photocurrent at WSe2/SiP interfaces. Although the rotational symmetry of each material prohibits the generation of spin photocurrent under normal incidence of light, we surprisingly observe a direction-selective spin photocurrent at the WSe2/SiP heterointerface with a twist angle of 0°, whose amplitude is electrically tunable with the BCD magnitude. Our results highlight a BCD-spin-valley correlation and provide a universal approach for engineering the geometric features of twisted heterointerfaces.
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Affiliation(s)
- Siyu Duan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xupeng Yang
- Institute of Physics, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Gan Liu
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fanhao Meng
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
| | - Jie Yao
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Toshiya Ideue
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, Japan.
- Institute for Solid State Physics, The University of Tokyo, Chiba, Japan.
| | - Biao Lian
- Department of Physics, Princeton University, Princeton, NJ, USA.
| | - Yoshihiro Iwasa
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- RIKEN Center for Emergent Matter Science, Wako, Japan
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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47
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Gao A, Liu YF, Qiu JX, Ghosh B, V Trevisan T, Onishi Y, Hu C, Qian T, Tien HJ, Chen SW, Huang M, Bérubé D, Li H, Tzschaschel C, Dinh T, Sun Z, Ho SC, Lien SW, Singh B, Watanabe K, Taniguchi T, Bell DC, Lin H, Chang TR, Du CR, Bansil A, Fu L, Ni N, Orth PP, Ma Q, Xu SY. Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure. Science 2023:eadf1506. [PMID: 37319246 DOI: 10.1126/science.adf1506] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Accepted: 06/06/2023] [Indexed: 06/17/2023]
Abstract
Quantum geometry in condensed matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in 2D electron gases and the anomalous Hall effect (AHE) in ferromagnets, quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by quantum metric dipole by interfacing even-layered MnBi2Te4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.
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Affiliation(s)
- Anyuan Gao
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Yu-Fei Liu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Jian-Xiang Qiu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Barun Ghosh
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Thaís V Trevisan
- Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA
- Ames National Laboratory, Ames, IA 50011, USA
| | - Yugo Onishi
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Chaowei Hu
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Tiema Qian
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Hung-Ju Tien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Shao-Wen Chen
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Mengqi Huang
- Department of Physics, University of California San Diego, La Jolla, CA 92093, USA
| | - Damien Bérubé
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Houchen Li
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Christian Tzschaschel
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Thao Dinh
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Zhe Sun
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Sheng-Chin Ho
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Shang-Wei Lien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Bahadur Singh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, India
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - David C Bell
- Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
- Center for Nanoscale Systems, Harvard University, Cambridge, MA 02138, USA
| | - Hsin Lin
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Chunhui Rita Du
- Department of Physics, University of California San Diego, La Jolla, CA 92093, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ni Ni
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Peter P Orth
- Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA
- Ames National Laboratory, Ames, IA 50011, USA
| | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Su-Yang Xu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
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48
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Wei Y, Yao C, Han L, Zhang L, Chen Z, Wang L, Lu W, Chen X. The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector. SENSORS (BASEL, SWITZERLAND) 2023; 23:5367. [PMID: 37420534 DOI: 10.3390/s23125367] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Revised: 05/26/2023] [Accepted: 06/02/2023] [Indexed: 07/09/2023]
Abstract
Studying the nonlinear photoresponse of different materials, including III-V semiconductors, two-dimensional materials and many others, is attracting burgeoning interest in the terahertz (THz) field. Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. However, as THz detectors continue to shrink in size, the impact of the hot-electron effect on device performance is impossible to ignore, and the physical process of THz conversion remains elusive. To reveal the underlying microscopic mechanisms, we have implemented drift-diffusion/hydrodynamic models via a self-consistent finite-element solution to understand the dynamics of carriers at the channel and the device structure dependence. By considering the hot-electron effect and doping dependence in our model, the competitive behavior between the nonlinear rectification and hot electron-induced photothermoelectric effect is clearly presented, and it is found that the optimized source doping concentrations can be utilized to reduce the hot-electron effect on the devices. Our results not only provide guidance for further device optimization but can also be extended to other novel electronic systems for studying THz nonlinear rectification.
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Affiliation(s)
- Yingdong Wei
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Chenyu Yao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Li Han
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China
| | - Libo Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China
| | - Zhiqingzi Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China
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49
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Lesne E, Saǧlam YG, Battilomo R, Mercaldo MT, van Thiel TC, Filippozzi U, Noce C, Cuoco M, Steele GA, Ortix C, Caviglia AD. Designing spin and orbital sources of Berry curvature at oxide interfaces. NATURE MATERIALS 2023; 22:576-582. [PMID: 36928382 PMCID: PMC10156604 DOI: 10.1038/s41563-023-01498-0] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Accepted: 01/31/2023] [Indexed: 05/05/2023]
Abstract
Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as the Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all the materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here we report the discovery of the first material system having both spin- and orbital-sourced BC: LaAlO3/SrTiO3 interfaces grown along the [111] direction. We independently detect these two sources and probe the BC associated to the spin quantum number through the measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material.
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Affiliation(s)
- Edouard Lesne
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands.
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
| | - Yildiz G Saǧlam
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Raffaele Battilomo
- Institute for Theoretical Physics, Center for Extreme Matter and Emergent Phenomena, Utrecht University, Utrecht, the Netherlands
| | | | - Thierry C van Thiel
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Ulderico Filippozzi
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Canio Noce
- Dipartimento di Fisica 'E. R. Caianiello', Universitá di Salerno, Fisciano, Italy
| | - Mario Cuoco
- CNR-SPIN c/o Universita' di Salerno, Fisciano, Italy
| | - Gary A Steele
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Carmine Ortix
- Institute for Theoretical Physics, Center for Extreme Matter and Emergent Phenomena, Utrecht University, Utrecht, the Netherlands.
- Dipartimento di Fisica 'E. R. Caianiello', Universitá di Salerno, Fisciano, Italy.
| | - Andrea D Caviglia
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.
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50
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Xiao C, Wu W, Wang H, Huang YX, Feng X, Liu H, Guo GY, Niu Q, Yang SA. Time-Reversal-Even Nonlinear Current Induced Spin Polarization. PHYSICAL REVIEW LETTERS 2023; 130:166302. [PMID: 37154629 DOI: 10.1103/physrevlett.130.166302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2022] [Accepted: 03/23/2023] [Indexed: 05/10/2023]
Abstract
We propose a time-reversal-even spin generation in second order of electric fields, which dominates the current induced spin polarization in a wide class of centrosymmetric nonmagnetic materials, and leads to a novel nonlinear spin-orbit torque in magnets. We reveal a quantum origin of this effect from the momentum space dipole of the anomalous spin polarizability. First-principles calculations predict sizable spin generations in several nonmagnetic hcp metals, in monolayer TiTe_{2}, and in ferromagnetic monolayer MnSe_{2}, which can be detected in experiment. Our work opens up the broad vista of nonlinear spintronics in both nonmagnetic and magnetic systems.
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Affiliation(s)
- Cong Xiao
- Department of Physics, The University of Hong Kong, Hong Kong, People's Republic of China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Weikang Wu
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, People's Republic of China
| | - Hui Wang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Yue-Xin Huang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Xiaolong Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Huiying Liu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- School of Physics, Beihang University, Beijing 100191, China
| | - Guang-Yu Guo
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan, Republic of China
- Physics Division, National Center for Theoretical Sciences, Taipei 10617, Taiwan, Republic of China
| | - Qian Niu
- School of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
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