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Li J, Yang X, Zhang Z, Yang W, Duan X, Duan X. Towards the scalable synthesis of two-dimensional heterostructures and superlattices beyond exfoliation and restacking. NATURE MATERIALS 2024:10.1038/s41563-024-01989-8. [PMID: 39227467 DOI: 10.1038/s41563-024-01989-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Accepted: 08/02/2024] [Indexed: 09/05/2024]
Abstract
Two-dimensional transition metal dichalcogenides, which feature atomically thin geometry and dangling-bond-free surfaces, have attracted intense interest for diverse technology applications, including ultra-miniaturized transistors towards the subnanometre scale. A straightforward exfoliation-and-restacking approach has been widely used for nearly arbitrary assembly of diverse two-dimensional (2D) heterostructures, superlattices and moiré superlattices, providing a versatile materials platform for fundamental investigations of exotic physical phenomena and proof-of-concept device demonstrations. While this approach has contributed importantly to the recent flourishing of 2D materials research, it is clearly unsuitable for practical technologies. Capturing the full potential of 2D transition metal dichalcogenides requires robust and scalable synthesis of these atomically thin materials and their heterostructures with designable spatial modulation of chemical compositions and electronic structures. The extreme aspect ratio, lack of intrinsic substrate and highly delicate nature of the atomically thin crystals present fundamental difficulties in material synthesis. Here we summarize the key challenges, highlight current advances and outline opportunities in the scalable synthesis of transition metal dichalcogenide-based heterostructures, superlattices and moiré superlattices.
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Affiliation(s)
- Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, China
| | - Zhengwei Zhang
- School of Physics and Electronics, Central South University, Changsha, China
| | - Weiyou Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA.
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2
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Zhu M, Yin H, Cao J, Xu L, Lu P, Liu Y, Ding L, Fan C, Liu H, Zhang Y, Jin Y, Peng LM, Jin C, Zhang Z. Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403743. [PMID: 38862115 DOI: 10.1002/adma.202403743] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Revised: 06/05/2024] [Indexed: 06/13/2024]
Abstract
Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp2 C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal-oxide-semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr3/CNT and exhibits a subthreshold swing of 35 mV dec-1 with a high on-state current of up to 4.9 µA per tube and an on/off current ratio of up to 105 at room temperature. The quasi-BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits.
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Affiliation(s)
- Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
- School of Integrated Circuits, Nanjing University, Suzhou, Jiangsu, 210023, China
| | - Huimin Yin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Jiang Cao
- Institute of Microelectronics, Chinese Academy of Science, Beijing, 100029, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Peng Lu
- Institute of Microelectronics, Chinese Academy of Science, Beijing, 100029, China
| | - Yang Liu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Chenwei Fan
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Haiyang Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Yuanfang Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Yizheng Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
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Xu K, Xie Y, Ma S, Liang Q, Shi Z. Heterodyne High-Harmonic Electrostatic Force Microscopy with Improved Spatial Resolution for Nanoscale Identification of Metallic/Semiconducting Carbon Nanotubes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:39867-39875. [PMID: 39039958 DOI: 10.1021/acsami.4c08163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
There are two main types of carbon nanotubes (CNTs): metallic and semiconducting. Naturally grown CNTs are randomly distributed, posing challenges in distinguishing between the two types. Here, a novel approach for nanoscale high-resolution imaging and identification of CNTs was introduced by incorporating the heterodyne technique into high-harmonic electrostatic force microscopy (HH-EFM) on an atomic force microscopy (AFM) platform. In the developed heterodyne HH-EFM, a more localized high-order gradient of tip-sample nonlinear interaction force is used as signal channels, resulting in an improved spatial resolution, compared to the conventional HH-EFM. Furthermore, the heterodyne HH-EFM also has the capability to visualize material carrier density and assess qualitative carrier transport performance. Our work not only presents a new approach to identifying/exploring electrical properties of low-dimensional nanomaterials but also provides a solution for optimizing resolution in long-range interaction-based functional AFM technologies.
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Affiliation(s)
- Kunqi Xu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Yufeng Xie
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Saiqun Ma
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Qi Liang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhiwen Shi
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
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Zhang L, Zhou R, Ma W, Lu H, Mo Y, Wang Y, Bao R, Pan C. Junction Piezotronic Transistor Arrays Based on Patterned ZnO Nanowires for High-Resolution Tactile and Photo Mapping. SENSORS (BASEL, SWITZERLAND) 2024; 24:4775. [PMID: 39123821 PMCID: PMC11314929 DOI: 10.3390/s24154775] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2024] [Revised: 07/15/2024] [Accepted: 07/21/2024] [Indexed: 08/12/2024]
Abstract
Recently, a great deal of interest has been focused on developing sensors that can measure both pressure and light. However, traditional sensors are difficult to integrate into silicon (Si)-based integrated circuits. Therefore, it is particularly important to design a sensor that operates on a new principle. In this paper, junction piezotronic transistor (JPT) arrays based on zinc oxide (ZnO) nanowire are demonstrated. And the JPT arrays show high spatial resolution pressure and light mapping with 195 dpi. Because ZnO nanowires are arranged vertically above the p-type Si channel's center of the transistor, the width of the heterojunction depletion region is constricted by the positive piezoelectric potential generated by strained ZnO. In addition, photogenerated charge carriers can be created in the Si channel when JPT is stimulated by light, which increases its electrical conductivity. Consequently, the external pressure and light distribution information can be obtained from the variation in the output current of the device. The prepared JPT arrays can be compatible with Si transistors, which make them highly competitive and make it possible to incorporate both pressure and light sensors into large integrated circuits. This work will contribute to many applications, such as intelligent clothing, human-computer interaction, and electronic skin.
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Affiliation(s)
- Li Zhang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China (C.P.)
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
| | - Runhui Zhou
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
| | - Wenda Ma
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
| | - Hui Lu
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
| | - Yepei Mo
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
| | - Yi Wang
- Department of Physical Education, Renmin University of China, Beijing 100872, China
| | - Rongrong Bao
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China (C.P.)
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China (C.P.)
- Institute of Atomic Manufacturing, Beihang University, Beijing 100191, China
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Cheng T, Meng Y, Luo M, Xian J, Luo W, Wang W, Yue F, Ho JC, Yu C, Chu J. Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403129. [PMID: 39030967 DOI: 10.1002/smll.202403129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 06/17/2024] [Indexed: 07/22/2024]
Abstract
The strategic integration of low-dimensional InAs-based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs-based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single-atomic-layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs-based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs-based materials and the working principles of InAs-based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs-based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi-functional applications, and incorporating deep learning into first-principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.
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Affiliation(s)
- Tiantian Cheng
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Yuxin Meng
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Man Luo
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Jiachi Xian
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Wenjin Luo
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Weijun Wang
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Fangyu Yue
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Chenhui Yu
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Junhao Chu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
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Su EJ, Chang TW, Lin FY, Lu ST, Tsai YT, Khan S, Weng YC, Shih CC. Efficient Sorting of Semiconducting Single-Walled Carbon Nanotubes in Bio-Renewable Solvents Through Main-Chain Engineering of Conjugated Polymers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403651. [PMID: 38934537 DOI: 10.1002/smll.202403651] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2024] [Revised: 06/13/2024] [Indexed: 06/28/2024]
Abstract
Conjugated polymer sorting is recognized as an efficient and scalable method for the selective extraction of semiconducting single-walled carbon nanotubes (s-SWCNTs). However, this process typically requires the use of nonpolar and aromatic solvents as the dispersion medium, which are petroleum-based and carry significant production hazards. Moreover, there is still potential for improving the efficiency of batch purification. Here, this study presents fluorene-based conjugated polymer that integrates diamines containing ethylene glycol chains (ODA) as linkers within the main chain, to effectively extract s-SWCNTs in bio-renewable solvents. The introduction of ODA segments enhances the solubility in bio-renewable solvents, facilitating effective wrapping of s-SWCNTs in polar environments. Additionally, the ODA within the main chain enhances affinity to s-SWCNTs, thereby contributing to increased yields and purity. The polymer achieves a high sorting yield of 55% and a purity of 99.6% in dispersion of s-SWCNTs in 2-Methyltetrahydrofuran. Thin-film transistor arrays fabricated with sorted s-SWCNTs solution through slot-die coating exhibit average charge carrier mobilities of 20-23 cm2 V⁻¹ s⁻¹ and high on/off current ratios exceeding 105 together with high spatial uniformity. This study highlights the viability of bio-renewable solvents in the sorting process, paving the way for the eco-friendly approach to the purification of SWCNTs.
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Affiliation(s)
- En-Jia Su
- Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin, 64002, Taiwan
| | - Ting-Wei Chang
- Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin, 64002, Taiwan
| | - Fong-Yi Lin
- Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin, 64002, Taiwan
| | - Shi-Ting Lu
- Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin, 64002, Taiwan
| | - Yi-Ting Tsai
- Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin, 64002, Taiwan
| | - Shahid Khan
- Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin, 64002, Taiwan
| | - Yu-Ching Weng
- Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin, 64002, Taiwan
| | - Chien-Chung Shih
- Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin, 64002, Taiwan
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7
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Chen X, Duan H, Cao B. Evolution Mechanism of Solid-Phase Catalysts During Catalytic Growth of Single-Walled Carbon Nanotubes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310543. [PMID: 38185805 DOI: 10.1002/smll.202310543] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Revised: 12/25/2023] [Indexed: 01/09/2024]
Abstract
Using solid nanoparticles (NPs) as catalysts is the most effective method to achieve catalytic growth of single-walled carbon nanotubes (SWCNTs) with ultrapure chirality. Until now, SWCNTs with a suitable chirality purity have not been prepared in experiments. That is, the evolution of solid NPs during the catalytic growth of SWCNTs is in contradiction with the original concept of a changeless structure. Hence, in this work, the evolution mechanism of solid cobalt NPs during the nucleation process of SWCNTs is analyzed through molecular dynamics. Similar to the experimental observations, the results show that a drastic structural fluctuation of the NPs occurs during the nucleation of SWCNTs. This structural fluctuation is caused by the fact that the elastic strain energy and surface energy of the NPs can be tuned when a carbon gradient exists between the subsurface and interior of the NP. Furthermore, such a carbon gradient can be reduced by changing the carbon feeding rate. This work not only reveals the evolution mechanism of solid catalysts during the nucleation of SWCNTs but also provides prospects for realizing solid catalysts with a changeless structure by tuning the experimental parameters.
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Affiliation(s)
- Xuan Chen
- School of Physical Science and Technology, Xinjiang University, Urumqi, 830046, P. R. China
| | - Haiming Duan
- School of Physical Science and Technology, Xinjiang University, Urumqi, 830046, P. R. China
- Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi, 830046, P. R. China
| | - Biaobing Cao
- School of Physical Science and Technology, Xinjiang University, Urumqi, 830046, P. R. China
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8
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Suzuki D, Terasaki N. Aerosol Doping System for Microscale Seamless p-n Patterning of Carbon Nanotube Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27596-27604. [PMID: 38760008 PMCID: PMC11145590 DOI: 10.1021/acsami.4c01550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2024] [Revised: 03/27/2024] [Accepted: 04/24/2024] [Indexed: 05/19/2024]
Abstract
Carbon nanotube (CNT) films are extensively researched as a promising material for wearable thermoelectric generators (TEGs) owing to their good flexibility and high thermoelectric conversion ability. Miniaturizing a pair of p- and n-type thermocouples and increasing the number of repeating elements can effectively increase the power of TEGs. However, conventional p-n patterning methods, such as dipping and printing, have a coarse resolution at the submillimeter level, thereby limiting the miniaturization rate. This study developed an aerosol doping system as a fine n-doping method. A dopant aerosol with a <3 μm diameter was formed through ultrasonic nebulization and air separation, while n-doping was achieved by exposing the CNT film to the dopant aerosol. Microscale p-n patterning of 1 μm was achieved through exposure using small-sized aerosols at an exceptionally slow rate of 3 Å/min. This resolution is 100 times higher than those of conventional p-n patterning methods. The developed aerosol doping system for CNTs can also be used on organic semiconductor materials, such as PEDOT/PSS and perovskite materials. Therefore, it has the potential to significantly impact the realization of Internet of Things (IoT) terminals, such as flexible TEGs, transistors, and solar cells.
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Affiliation(s)
- Daichi Suzuki
- Sensing System Research Center, National Institute of Advanced Industrial Science
and Technology (AIST), Saga 841-0052, Japan
| | - Nao Terasaki
- Sensing System Research Center, National Institute of Advanced Industrial Science
and Technology (AIST), Saga 841-0052, Japan
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Yang Q, Gong Z, Xiao S, Zhang D, Ma L. Establishing Ohmic Contact of a Radial Compressed CNT Bundle with High Work Function Metal. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:10460-10467. [PMID: 38441484 DOI: 10.1021/acs.langmuir.3c03395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Establishing low-resistance ohmic contact is critical for developing electronic devices based on traditional silicon and new low-dimensional materials. Due to unprecedented electronic and mechanical properties, the one-dimensional carbon nanotubes (CNTs) have been used as source/drain, gate, or tunnel to fabricate transistors. However, the mechanism causing low-resistance ohmic contact is not clear yet. Here, the hybrid atomic force microscopy-scanning electron microscopy (AFM-SEM) instrument was developed to establish lower-resistance ohmic contact between a radial compressed deformed multiwalled CNT bundle and high work function metal (platinum and gold). The radial compression structure under strong van der Waals attraction was in situ characterized through the SEM image to obtain the diameter and width and through AFM to get height and to perform nanoindentation, indicating that Pt has the smaller radial compression deformation. Molecular dynamics simulations exhibit that compared to Pt, a wider ribbon-like graphene layer formed when the radial compressed CNTs contacted with Au. The bond forming and electron orbital overlapping between C atoms of deformed CNTs and the high work function metal atom is beneficial for good electrical contact.
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Affiliation(s)
- Quan Yang
- College of Integrated Circuits, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China
| | - Zhihao Gong
- Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China
| | - Shungen Xiao
- School of Information Engineering, Ningde Normal University, Ningde 352100, China
| | - Dongxing Zhang
- Shenzhen Institute for Advanced Study, University of Electronics Science and Technology of China, Shenzhen 518110, China
| | - Li Ma
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China
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10
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Hu X, Zhang M, Liu Y, Li YT, Li W, Li T, Li J, Xiao X, He Q, Zhang ZY, Zhang GJ. A portable transistor immunosensor for fast identification of porcine epidemic diarrhea virus. J Nanobiotechnology 2024; 22:239. [PMID: 38735951 PMCID: PMC11089749 DOI: 10.1186/s12951-024-02440-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2024] [Accepted: 03/25/2024] [Indexed: 05/14/2024] Open
Abstract
Widespread distribution of porcine epidemic diarrhea virus (PEDV) has led to catastrophic losses to the global pig farming industry. As a result, there is an urgent need for rapid, sensitive and accurate tests for PEDV to enable timely and effective interventions. In the present study, we develop and validate a floating gate carbon nanotubes field-effect transistor (FG CNT-FET)-based portable immunosensor for rapid identification of PEDV in a sensitive and accurate manner. To improve the affinity, a unique PEDV spike protein-specific monoclonal antibody is prepared by purification, and subsequently modified on FG CNT-FET sensor to recognize PEDV. The developed FET biosensor enables highly sensitive detection (LoD: 8.1 fg/mL and 100.14 TCID50/mL for recombinant spike proteins and PEDV, respectively), as well as satisfactory specificity. Notably, an integrated portable platform consisting of a pluggable FG CNT-FET chip and a portable device can discriminate PEDV positive from negative samples and even identify PEDV and porcine deltacoronavirus within 1 min with 100% accuracy. The portable sensing platform offers the capability to quickly, sensitively and accurately identify PEDV, which further points to a possibility of point of care (POC) applications of large-scale surveillance in pig breeding facilities.
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Affiliation(s)
- Xiao Hu
- School of Laboratory Medicine, Hubei University of Chinese Medicine, 16 Huangjia Lake West Road, Wuhan, 430065, P.R. China
- Department of Pharmacy, Renmin Hospital, Hubei University of Medicine, Shiyan, Hubei, 442000, P.R. China
| | - Mengjia Zhang
- National Key Laboratory of Agricultural Microbiology, College of Veterinary Medicine, Huazhong Agricultural University, Wuhan, 430070, P. R. China
- Key Laboratory of Prevention & Control for African Swine Fever and Other Major Pig Diseases, Key Laboratory of Development of Veterinary Diagnostic Products, Ministry of Agriculture and Rural Affairs, Wuhan, 430070, P. R. China
| | - Yiwei Liu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan, 411105, P. R. China
| | - Yu-Tao Li
- School of Laboratory Medicine, Hubei University of Chinese Medicine, 16 Huangjia Lake West Road, Wuhan, 430065, P.R. China
- Hubei Shizhen Laboratory, Wuhan, Hubei, 430065, P.R. China
| | - Wentao Li
- National Key Laboratory of Agricultural Microbiology, College of Veterinary Medicine, Huazhong Agricultural University, Wuhan, 430070, P. R. China
- Key Laboratory of Prevention & Control for African Swine Fever and Other Major Pig Diseases, Key Laboratory of Development of Veterinary Diagnostic Products, Ministry of Agriculture and Rural Affairs, Wuhan, 430070, P. R. China
| | - Tingxian Li
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Jiahao Li
- School of Laboratory Medicine, Hubei University of Chinese Medicine, 16 Huangjia Lake West Road, Wuhan, 430065, P.R. China
| | - Xueqian Xiao
- School of Laboratory Medicine, Hubei University of Chinese Medicine, 16 Huangjia Lake West Road, Wuhan, 430065, P.R. China
| | - Qigai He
- National Key Laboratory of Agricultural Microbiology, College of Veterinary Medicine, Huazhong Agricultural University, Wuhan, 430070, P. R. China.
- Key Laboratory of Prevention & Control for African Swine Fever and Other Major Pig Diseases, Key Laboratory of Development of Veterinary Diagnostic Products, Ministry of Agriculture and Rural Affairs, Wuhan, 430070, P. R. China.
| | - Zhi-Yong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China.
| | - Guo-Jun Zhang
- School of Laboratory Medicine, Hubei University of Chinese Medicine, 16 Huangjia Lake West Road, Wuhan, 430065, P.R. China.
- Hubei Shizhen Laboratory, Wuhan, Hubei, 430065, P.R. China.
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11
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Xia Z, Cheung KM, Chen H, Pun SH, Miao Q. A new armchair carbon nanobelt synthesized by tuning the regioselectivity of the Scholl reaction of quinquephenyl. Chem Commun (Camb) 2024; 60:4314-4317. [PMID: 38533657 DOI: 10.1039/d4cc00979g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
A new armchair carbon nanobelt is successfully synthesized by tuning the regioselectivity of the Scholl reaction of 1,1':2',1'':4'',1''':2''',1''''-quinquephenyl. This nanobelt exhibits a preferential binding affinity towards C70 over C60 as found from photoluminescence titration experiments.
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Affiliation(s)
- Zeming Xia
- Department of Chemistry and State Key Laboratory of Synthetic Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong, China.
| | - Ka Man Cheung
- Department of Chemistry and State Key Laboratory of Synthetic Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong, China.
| | - Han Chen
- Department of Chemistry and State Key Laboratory of Synthetic Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong, China.
| | - Sai Ho Pun
- Department of Chemistry and State Key Laboratory of Synthetic Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong, China.
| | - Qian Miao
- Department of Chemistry and State Key Laboratory of Synthetic Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong, China.
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12
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Li MK, Dehm S, Kappes MM, Hennrich F, Krupke R. Correlation Measurements for Carbon Nanotubes with Quantum Defects. ACS NANO 2024; 18:9525-9534. [PMID: 38513118 DOI: 10.1021/acsnano.3c12530] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Single-photon sources are essential building blocks for the development of photonic quantum technology. Regarding potential practical application, an on-demand electrically driven quantum-light emitter on a chip is notably crucial for photonic integrated circuits. Here, we propose functionalized single-walled carbon nanotube field-effect transistors as a promising solid-state quantum-light source by demonstrating photon antibunching behavior via electrical excitation. The sp3 quantum defects were formed on the surface of (7, 5) carbon nanotubes by 3,5-dichlorophenyl functionalization, and individual carbon nanotubes were wired to graphene electrode pairs. Filtered electroluminescent defect-state emission at 77 K was coupled into a Hanbury Brown and Twiss experiment setup, and single-photon emission was observed by performing second-order correlation function measurements. We discuss the dependence of the intensity correlation measurement on electrical power and emission wavelength, highlighting the challenges of performing such measurements while simultaneously analyzing acquired data. Our results indicate a route toward room-temperature electrically triggered single-photon emission.
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Affiliation(s)
- Min-Ken Li
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Simone Dehm
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
| | - Manfred M Kappes
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
- Institute of Physical Chemistry, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
| | - Frank Hennrich
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
| | - Ralph Krupke
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
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13
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Si J, Zhang P, Zhang Z. Road map for, and technical challenges of, carbon-nanotube integrated circuit technology. Natl Sci Rev 2024; 11:nwad261. [PMID: 38312387 PMCID: PMC10833444 DOI: 10.1093/nsr/nwad261] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 09/14/2023] [Indexed: 02/06/2024] Open
Abstract
A new targeted observational algorithm was developed to optimize prediction targets across various regions and variables. This approach was utilized to design an optimal ENSO monitoring array in the TPOS 2020 project.
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Affiliation(s)
- Jia Si
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, China
| | - Panpan Zhang
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, China
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, China
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14
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Hua Q, Shen G. Low-dimensional nanostructures for monolithic 3D-integrated flexible and stretchable electronics. Chem Soc Rev 2024; 53:1316-1353. [PMID: 38196334 DOI: 10.1039/d3cs00918a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
Flexible/stretchable electronics, which are characterized by their ultrathin design, lightweight structure, and excellent mechanical robustness and conformability, have garnered significant attention due to their unprecedented potential in healthcare, advanced robotics, and human-machine interface technologies. An increasing number of low-dimensional nanostructures with exceptional mechanical, electronic, and/or optical properties are being developed for flexible/stretchable electronics to fulfill the functional and application requirements of information sensing, processing, and interactive loops. Compared to the traditional single-layer format, which has a restricted design space, a monolithic three-dimensional (M3D) integrated device architecture offers greater flexibility and stretchability for electronic devices, achieving a high-level of integration to accommodate the state-of-the-art design targets, such as skin-comfort, miniaturization, and multi-functionality. Low-dimensional nanostructures possess small size, unique characteristics, flexible/elastic adaptability, and effective vertical stacking capability, boosting the advancement of M3D-integrated flexible/stretchable systems. In this review, we provide a summary of the typical low-dimensional nanostructures found in semiconductor, interconnect, and substrate materials, and discuss the design rules of flexible/stretchable devices for intelligent sensing and data processing. Furthermore, artificial sensory systems in 3D integration have been reviewed, highlighting the advancements in flexible/stretchable electronics that are deployed with high-density, energy-efficiency, and multi-functionalities. Finally, we discuss the technical challenges and advanced methodologies involved in the design and optimization of low-dimensional nanostructures, to achieve monolithic 3D-integrated flexible/stretchable multi-sensory systems.
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Affiliation(s)
- Qilin Hua
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
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15
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Li Y, Liu Y, Jin F, Cao L, Jin H, Qiu S, Li Q. Polymer removal and dispersion exchange of (10,5) chiral carbon nanotubes with enhanced 1.5 μm photoluminescence. NANOSCALE ADVANCES 2024; 6:792-797. [PMID: 38298584 PMCID: PMC10825900 DOI: 10.1039/d3na01041d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 01/09/2024] [Indexed: 02/02/2024]
Abstract
Singe-chirality single-walled carbon nanotubes (SWCNTs) produced by selective polymer extraction have been actively investigated for their semiconductor applications. However, to fulfil the needs of biocompatible applications, the organic solvents in polymer-sorted SWCNTs impose a limitation. In this study, we developed a novel strategy for organic-to-aqueous phase exchange, which involves thoroughly removing polymers from the sorted SWCNTs, followed by surfactant covering and redispersing of the cleaned SWCNTs in water. Importantly, the obtained aqueous system allows us to perform sp3 functionalization of the SWCNTs, leading to a strong photoluminescence emission at 1550 nm from the defect sites of (10,5) SWCNTs. These functionalized SWCNTs as infrared light emitters show considerable potential for bioimaging applications. This exchange-and-functionalization strategy opens the door for future biocompatible applications of polymer-sorted SWCNTs.
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Affiliation(s)
- Yahui Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 96 Jinzhai Road Hefei 230026 China
- Division of Advanced Nano-Materials, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science 398 Ruoshui Road Suzhou 215123 China
| | - Ye Liu
- Division of Advanced Nano-Materials, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science 398 Ruoshui Road Suzhou 215123 China
| | - Feng Jin
- Division of Advanced Nano-Materials, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science 398 Ruoshui Road Suzhou 215123 China
| | - Leitao Cao
- Division of Advanced Nano-Materials, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science 398 Ruoshui Road Suzhou 215123 China
| | - Hehua Jin
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 96 Jinzhai Road Hefei 230026 China
- Division of Advanced Nano-Materials, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science 398 Ruoshui Road Suzhou 215123 China
| | - Song Qiu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 96 Jinzhai Road Hefei 230026 China
- Division of Advanced Nano-Materials, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science 398 Ruoshui Road Suzhou 215123 China
| | - Qingwen Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 96 Jinzhai Road Hefei 230026 China
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16
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Shin S, Song H, Shin YS, Lee J, Seo TH. Bayesian Optimization of Wet-Impregnated Co-Mo/Al 2O 3 Catalyst for Maximizing the Yield of Carbon Nanotube Synthesis. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 14:75. [PMID: 38202530 PMCID: PMC10780783 DOI: 10.3390/nano14010075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 12/19/2023] [Accepted: 12/23/2023] [Indexed: 01/12/2024]
Abstract
Multimetallic catalysts have demonstrated their high potential for the controlled synthesis of carbon nanotubes (CNTs), but their development requires a more complicated optimization than that of monometallic catalysts. Here, we employed Bayesian optimization (BO) to optimize the preparation of Co-Mo/Al2O3 catalyst using wet impregnation, with the goal of maximizing carbon yield in the chemical vapor deposition (CVD) synthesis of CNTs. In the catalyst preparation process, we selected four parameters to optimize: the weight percentage of metal, the ratio of Co to Mo in the catalyst, the drying temperature, and the calcination temperature. We ran two parallel BO processes to compare the performance of two types of acquisitions: expected improvement (EI), which does not consider noise, and one-shot knowledge gradient (OKG), which takes noise into account. As a result, both acquisition functions successfully optimized the carbon yield with similar performance. The result suggests that the use of EI, which has a lower computational load, is acceptable if the system has sufficient robustness. The investigation of the contour plots showed that the addition of Mo has a negative effect on carbon yield.
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Affiliation(s)
- Sangsoo Shin
- School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea; (S.S.); (H.S.); (Y.S.S.)
| | - Hyeongyun Song
- School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea; (S.S.); (H.S.); (Y.S.S.)
| | - Yeon Su Shin
- School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea; (S.S.); (H.S.); (Y.S.S.)
| | - Jaegeun Lee
- School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea; (S.S.); (H.S.); (Y.S.S.)
- Department of Organic Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Tae Hoon Seo
- Green Energy and Nano Technology & R&D Group, Korea Institute of Industrial Technology (KITECH), Gwangju 61012, Republic of Korea
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17
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Peng LM. High-Performance Carbon Nanotube Thin-Film Transistor Technology. ACS NANO 2023; 17:22156-22166. [PMID: 37955303 DOI: 10.1021/acsnano.3c05753] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
Semiconducting single-walled carbon nanotubes (CNTs) have ideal electronic, chemical, and mechanical properties and are ideal channel materials for constructing transistors in the post-Moore era. Experiments have shown that CNT-based planar CMOS transistors can be scaled down to sub-10 nm technology nodes, demonstrating excellent performance far exceeding the silicon limit. At the same time, CNT electronic technology is essentially a thin-film transistor technology, which enables the construction of chips on such substrates as glass and polymers with an area of several meters, providing technical support for large-area and flexible electronic applications. In addition, since CNT electronics technology involves only low-temperature processes (less than 400 °C), the monolithic 3D integration of logic and memory devices can be realized which can greatly improve the comprehensive performance of the chip and lead to a thousand-fold performance increase for special data structures, especially in AI applications.
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Affiliation(s)
- Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100081, People's Republic of China
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18
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Ma X, Long R. The sp 3 Defect Decreases Charge Carrier Lifetime in (8,3) Single-Walled Carbon Nanotubes. J Phys Chem Lett 2023; 14:10242-10248. [PMID: 37937588 DOI: 10.1021/acs.jpclett.3c02923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2023]
Abstract
A recent experimental approach introduces sp3 defects into single-walled carbon nanotubes (SWNTs) through controlled functionalization with guanine, resulting in a decrease in charge carrier lifetime. However, the physical mechanism behind this phenomenon remains unclear. We employ nonadiabatic molecular dynamics to systematically model the nonradiative recombination process of electron-hole pairs in SWNTs with sp3 defects generated by a guanine molecule. We demonstrate that the introduction of sp3 defects creates an overlapping channel between the highest occupied (HOMO) and lowest unoccupied molecular orbital (LUMO), significantly enhancing the nonadiabatic (NA) coupling and leading to a 4.7-fold acceleration in charge carrier recombination compared to defect-free SWNTs. The charge carrier recombination slows significantly at a lower temperature (50 K) due to the weakening of the NA coupling. Our results rationalize the accelerated recombination of charge carriers in SWNTs with sp3 defects in experiments and contribute to a deeper understanding of the carrier dynamics in SWNTs.
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Affiliation(s)
- Xinbo Ma
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P. R. China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P. R. China
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19
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Lin Q, Gilardi C, Su SK, Zhang Z, Chen E, Bandaru P, Kummel A, Radu I, Mitra S, Pitner G, Wong HSP. Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors. ACS NANO 2023; 17:21083-21092. [PMID: 37910857 DOI: 10.1021/acsnano.3c04346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Carbon nanotube (CNT) transistors demonstrate high mobility but also experience off-state leakage due to the small effective mass and band gap. The lower limit of off-current (IMIN) was measured in electrostatically doped CNT metal-oxide-semiconductor field-effect transistors (MOSFETs) across a range of band gaps (0.37 to 1.19 eV), supply voltages (0.5 to 0.7 V), and extension doping levels (0.2 to 0.8 carriers/nm). A nonequilibrium Green's function (NEGF) model confirms the dependence of IMIN on CNT band gap, supply voltage, and extension doping level. A leakage current design space across CNT band gap, supply voltage, and extension doping is projected based on the validated NEGF model for long-channel CNT MOSFETs to identify the appropriate device design choices. The optimal extension doping and CNT band gap design choice for a target off-current density are identified by including on-current projection in the leakage current design space. An extension doping level >0.5 carrier/nm is required for optimized on-current.
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Affiliation(s)
- Qing Lin
- Dept. of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Carlo Gilardi
- Dept. of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Sheng-Kai Su
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan
| | - Zichen Zhang
- Dept. of Electrical Engineering, University of California San Diego, San Diego, California 92093, United States
| | - Edward Chen
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan
| | - Prabhakar Bandaru
- Dept. of Electrical Engineering, University of California San Diego, San Diego, California 92093, United States
| | - Andrew Kummel
- Dept. of Electrical Engineering, University of California San Diego, San Diego, California 92093, United States
| | - Iuliana Radu
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan
| | - Subhasish Mitra
- Dept. of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Greg Pitner
- Corporate Research, Taiwan Semiconductor Manufacturing Company, San Jose, California 95134, United States
| | - H-S Philip Wong
- Dept. of Electrical Engineering, Stanford University, Stanford, California 94305, United States
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20
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Li Y, Tang J, Gao B, Yao J, Fan A, Yan B, Yang Y, Xi Y, Li Y, Li J, Sun W, Du Y, Liu Z, Zhang Q, Qiu S, Li Q, Qian H, Wu H. Monolithic three-dimensional integration of RRAM-based hybrid memory architecture for one-shot learning. Nat Commun 2023; 14:7140. [PMID: 37932300 PMCID: PMC10628152 DOI: 10.1038/s41467-023-42981-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Accepted: 10/25/2023] [Indexed: 11/08/2023] Open
Abstract
In this work, we report the monolithic three-dimensional integration (M3D) of hybrid memory architecture based on resistive random-access memory (RRAM), named M3D-LIME. The chip featured three key functional layers: the first was Si complementary metal-oxide-semiconductor (CMOS) for control logic; the second was computing-in-memory (CIM) layer with HfAlOx-based analog RRAM array to implement neural networks for feature extractions; the third was on-chip buffer and ternary content-addressable memory (TCAM) array for template storing and matching, based on Ta2O5-based binary RRAM and carbon nanotube field-effect transistor (CNTFET). Extensive structural analysis along with array-level electrical measurements and functional demonstrations on the CIM and TCAM arrays was performed. The M3D-LIME chip was further used to implement one-shot learning, where ~96% accuracy was achieved on the Omniglot dataset while exhibiting 18.3× higher energy efficiency than graphics processing unit (GPU). This work demonstrates the tremendous potential of M3D-LIME with RRAM-based hybrid memory architecture for future data-centric applications.
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Affiliation(s)
- Yijun Li
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Jianshi Tang
- School of Integrated Circuits, Tsinghua University, Beijing, China.
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China.
| | - Bin Gao
- School of Integrated Circuits, Tsinghua University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Jian Yao
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, China
| | - Anjunyi Fan
- Institute for Artificial Intelligence, Peking University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, China
| | - Bonan Yan
- Institute for Artificial Intelligence, Peking University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, China
| | - Yuchao Yang
- Institute for Artificial Intelligence, Peking University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, China
- School of Electronic and Computer Engineering, Peking University, Shenzhen, China
- Center for Brain Inspired Intelligence, Chinese Institute for Brain Research (CIBR), Beijing, China
| | - Yue Xi
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Yuankun Li
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Jiaming Li
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Wen Sun
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Yiwei Du
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Zhengwu Liu
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Qingtian Zhang
- School of Integrated Circuits, Tsinghua University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, China
| | - Qingwen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, China
| | - He Qian
- School of Integrated Circuits, Tsinghua University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Huaqiang Wu
- School of Integrated Circuits, Tsinghua University, Beijing, China.
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China.
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21
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Roy A, Ta BQ, Azadmehr M, Aasmundtveit KE. Post-CMOS processing challenges and design developments of CMOS-MEMS microheaters for local CNT synthesis. MICROSYSTEMS & NANOENGINEERING 2023; 9:136. [PMID: 37937184 PMCID: PMC10625928 DOI: 10.1038/s41378-023-00598-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 07/31/2023] [Accepted: 08/16/2023] [Indexed: 11/09/2023]
Abstract
Carbon nanotubes (CNTs) can be locally grown on custom-designed CMOS microheaters by a thermal chemical vapour deposition (CVD) process to utilize the sensing capabilities of CNTs in emerging micro- and nanotechnology applications. For such a direct CMOS-CNT integration, a key requirement is the development of necessary post-processing steps on CMOS chips for fabricating CMOS-MEMS polysilicon heaters that can locally generate the required CNT synthesis temperatures (~650-900 °C). In our post-CMOS processing, a subtractive fabrication technique is used for micromachining the polysilicon heaters, where the passivation layers in CMOS are used as masks to protect the electronics. For dielectric etching, it is necessary to achieve high selectivity, uniform etching and a good etch rate to fully expose the polysilicon layers without causing damage. We achieved successful post-CMOS processing by developing two-step reactive ion etching (RIE) of the SiO2 dielectric layer and making design improvements to a second-generation CMOS chip. After the dry etching process, CMOS-MEMS microheaters are partially suspended by SiO2 wet etching with minimum damage to the exposed aluminium layers, to obtain high thermal isolation. The fabricated microheaters are then successfully utilized for synthesizing CNTs by a local thermal CVD process. The CMOS post-processing challenges and design aspects to fabricate CMOS-MEMS polysilicon microheaters for such high-temperature applications are detailed in this article. Our developed process for heterogeneous monolithic integration of CMOS-CNT shows promise for wafer-level manufacturing of CNT-based sensors by incorporating additional steps in an already existing foundry CMOS process.
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Affiliation(s)
- Avisek Roy
- Department of Microsystems, University of South-Eastern Norway, 3184 Horten, Norway
| | - Bao Q. Ta
- Department of Microsystems, University of South-Eastern Norway, 3184 Horten, Norway
| | - Mehdi Azadmehr
- Department of Microsystems, University of South-Eastern Norway, 3184 Horten, Norway
| | - Knut E. Aasmundtveit
- Department of Microsystems, University of South-Eastern Norway, 3184 Horten, Norway
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22
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Dzienia A, Just D, Taborowska P, Mielanczyk A, Milowska KZ, Yorozuya S, Naka S, Shiraki T, Janas D. Mixed-Solvent Engineering as a Way around the Trade-Off between Yield and Purity of (7,3) Single-Walled Carbon Nanotubes Obtained Using Conjugated Polymer Extraction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304211. [PMID: 37467281 DOI: 10.1002/smll.202304211] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Revised: 07/11/2023] [Indexed: 07/21/2023]
Abstract
The inability to purify nanomaterials such as single-walled carbon nanotubes (SWCNTs) to the desired extent hampers the progress in nanoscience. Various SWCNT types can be purified by extraction, but it is challenging to establish conditions giving rise to the isolation of high-purity fractions. The problem stems from the fact that common organic solvents or water cannot provide an optimal environment for purification. Consequently, one must often decide between the separation yield and purity of the product. This article reports how through the self-synthesis of poly(9,9-dioctylfluorene-alt-benzothiadiazole) with tailored characteristics, in-depth elucidation of the extraction process, and mixed-solvent engineering, a high-yield isolation of monochiral (7,3) SWCNTs is developed. The combination of toluene and tetralin affords a separation medium of unique properties, wherein both high yield and exceptional purity can be attained simultaneously. The reported results pave the way for further research on this rare chirality, which, as illustrated herein, is much more reactive than any of the previously separated SWCNTs.
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Affiliation(s)
- Andrzej Dzienia
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
- Institute of Materials Engineering, University of Silesia in Katowice, Bankowa 12, Katowice, 40-007, Poland
| | - Dominik Just
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
| | - Patrycja Taborowska
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
| | - Anna Mielanczyk
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
| | - Karolina Z Milowska
- CIC nanoGUNE, Donostia-San Sebastián, 20018, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, 48013, Spain
- TCM Group, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Shunji Yorozuya
- Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
| | - Sadahito Naka
- Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
| | - Tomohiro Shiraki
- Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
| | - Dawid Janas
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
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23
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Chen S, Chen Y, Xu H, Lyu M, Zhang X, Han Z, Liu H, Yao Y, Xu C, Sheng J, Xu Y, Gao L, Gao N, Zhang Z, Peng LM, Li Y. Single-walled carbon nanotubes synthesized by laser ablation from coal for field-effect transistors. MATERIALS HORIZONS 2023; 10:5185-5191. [PMID: 37724683 DOI: 10.1039/d3mh01053h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
Single-walled carbon nanotubes (SWCNTs) have been attracting extensive attention due to their excellent properties. We have developed a strategy of using coal to synthesize SWCNTs for high performance field-effect transistors (FETs). The high-quality SWCNTs were synthesized by laser ablation using only coal as the carbon source and Co-Ni as the catalyst. We show that coal is a carbon source superior to graphite with higher yield and better selectivity toward SWCNTs with smaller diameters. Without any pre-purification, the as-prepared SWCNTs were directly sorted based on their conductivity and diameter using either aqueous two-phase extraction or organic phase extraction with PCz (poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl]). The semiconducting SWCNTs sorted by one-step PCz extraction were used to fabricate thin film FETs. The transformation of coal into FETs (and further integrated circuits) demonstrates an efficient way of utilizing natural resources and a marvelous example in green carbon technology. Considering its short steps and high feasibility, it presents great potential in future practical applications not limited to electronics.
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Affiliation(s)
- Shaochuang Chen
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Yuguang Chen
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Haitao Xu
- Institute for Carbon-Based Thin Film Electronics, Peking University, Shanxi, Taiyuan 030012, China
- Institute of Advanced Functional Materials and Devices, Shanxi University, Taiyuan 030031, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
| | - Min Lyu
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Xinrui Zhang
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Zhen Han
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Haoming Liu
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Yixi Yao
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Chi Xu
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Jian Sheng
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Yifan Xu
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
| | - Lei Gao
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
| | - Ningfei Gao
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
| | - Zeyao Zhang
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
- Institute for Carbon-Based Thin Film Electronics, Peking University, Shanxi, Taiyuan 030012, China
- Institute of Advanced Functional Materials and Devices, Shanxi University, Taiyuan 030031, China
| | - Lian-Mao Peng
- Institute for Carbon-Based Thin Film Electronics, Peking University, Shanxi, Taiyuan 030012, China
| | - Yan Li
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
- Institute for Carbon-Based Thin Film Electronics, Peking University, Shanxi, Taiyuan 030012, China
- PKU-HKUST ShenZhen-HongKong Institution, Shenzhen 518057, China
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24
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Li Y, Georges G. Three Decades of Single-Walled Carbon Nanotubes Research: Envisioning the Next Breakthrough Applications. ACS NANO 2023; 17:19471-19473. [PMID: 37877203 DOI: 10.1021/acsnano.3c08909] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
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25
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Lv H, Xie N, Li M, Dong M, Sun C, Zhang Q, Zhao L, Li J, Zuo X, Chen H, Wang F, Fan C. DNA-based programmable gate arrays for general-purpose DNA computing. Nature 2023; 622:292-300. [PMID: 37704731 DOI: 10.1038/s41586-023-06484-9] [Citation(s) in RCA: 23] [Impact Index Per Article: 23.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Accepted: 07/26/2023] [Indexed: 09/15/2023]
Abstract
The past decades have witnessed the evolution of electronic and photonic integrated circuits, from application specific to programmable1,2. Although liquid-phase DNA circuitry holds the potential for massive parallelism in the encoding and execution of algorithms3,4, the development of general-purpose DNA integrated circuits (DICs) has yet to be explored. Here we demonstrate a DIC system by integration of multilayer DNA-based programmable gate arrays (DPGAs). We find that the use of generic single-stranded oligonucleotides as a uniform transmission signal can reliably integrate large-scale DICs with minimal leakage and high fidelity for general-purpose computing. Reconfiguration of a single DPGA with 24 addressable dual-rail gates can be programmed with wiring instructions to implement over 100 billion distinct circuits. Furthermore, to control the intrinsically random collision of molecules, we designed DNA origami registers to provide the directionality for asynchronous execution of cascaded DPGAs. We exemplify this by a quadratic equation-solving DIC assembled with three layers of cascade DPGAs comprising 30 logic gates with around 500 DNA strands. We further show that integration of a DPGA with an analog-to-digital converter can classify disease-related microRNAs. The ability to integrate large-scale DPGA networks without apparent signal attenuation marks a key step towards general-purpose DNA computing.
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Affiliation(s)
- Hui Lv
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai, China
- Zhangjiang Laboratory, Shanghai, China
| | - Nuli Xie
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai, China
| | - Mingqiang Li
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai, China
| | - Mingkai Dong
- Institute of Parallel and Distributed Systems, Shanghai Jiao Tong University, Shanghai, China
| | - Chenyun Sun
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai, China
| | - Qian Zhang
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai, China
| | - Lei Zhao
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai, China
- Xiangfu Laboratory, Jiashan, China
| | - Jiang Li
- The Interdisciplinary Research Center, Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China
- Institute of Materiobiology, Department of Chemistry, College of Science, Shanghai University, Shanghai, China
| | - Xiaolei Zuo
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai, China
- Institute of Molecular Medicine, Shanghai Key Laboratory for Nucleic Acid Chemistry and Nanomedicine, Renji Hospital, School of Medicine, Shanghai Jiao Tong University, Shanghai, China
| | - Haibo Chen
- Institute of Parallel and Distributed Systems, Shanghai Jiao Tong University, Shanghai, China
| | - Fei Wang
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai, China.
| | - Chunhai Fan
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai, China.
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26
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Meng Y, Zhong H, Xu Z, He T, Kim JS, Han S, Kim S, Park S, Shen Y, Gong M, Xiao Q, Bae SH. Functionalizing nanophotonic structures with 2D van der Waals materials. NANOSCALE HORIZONS 2023; 8:1345-1365. [PMID: 37608742 DOI: 10.1039/d3nh00246b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
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Affiliation(s)
- Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Hongkun Zhong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Tiantian He
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Sunok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Seoungwoong Park
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Yijie Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
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27
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Zhu F, Zou Y, Lu J, Wei J, Zhu H. The structural stability, electronic properties regulation and feasibility of controllable preparation of a C 0.5/(BN) 0.5 heterojunction single-walled nanotube. Heliyon 2023; 9:e19382. [PMID: 37809672 PMCID: PMC10558355 DOI: 10.1016/j.heliyon.2023.e19382] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Revised: 08/09/2023] [Accepted: 08/21/2023] [Indexed: 10/10/2023] Open
Abstract
Our work investigates the structural stability of a C 0.5 / ( BN ) 0.5 heterojunction single-walled nanotube by comparing the binding energy. The energy band structure, electronic density of states and regulation relation between band gap and indirect-direct properties and tube diameter and type are systematically studied. Based on existing experimental and theoretical results, dynamic simulated calculating of the stitching process is carried out to explore the feasibility of controllable preparation.
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Affiliation(s)
- Feiyu Zhu
- Xinjiang Key Laboratory for Luminescence Minerals and Optical Functional Materials, School of Physics and Electronic Engineering, Xinjiang Normal University, Urumqi, Xinjiang 830054, China
| | - Yanbo Zou
- Xinjiang Key Laboratory for Luminescence Minerals and Optical Functional Materials, School of Physics and Electronic Engineering, Xinjiang Normal University, Urumqi, Xinjiang 830054, China
| | - Junzhe Lu
- Xinjiang Key Laboratory for Luminescence Minerals and Optical Functional Materials, School of Physics and Electronic Engineering, Xinjiang Normal University, Urumqi, Xinjiang 830054, China
| | - Jie Wei
- Laboratory and Equipment Management Division, Xinjiang Normal University, Urumqi, Xinjiang 830054, China
| | - Hengjiang Zhu
- Xinjiang Key Laboratory for Luminescence Minerals and Optical Functional Materials, School of Physics and Electronic Engineering, Xinjiang Normal University, Urumqi, Xinjiang 830054, China
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28
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Yi H, Ma C, Wang W, Liang H, Cui R, Cao W, Yang H, Ma Y, Huang W, Zheng Z, Zou Y, Deng Z, Yao J, Yang G. Quantum tailoring for polarization-discriminating Bi 2S 3 nanowire photodetectors and their multiplexing optical communication and imaging applications. MATERIALS HORIZONS 2023; 10:3369-3381. [PMID: 37404203 DOI: 10.1039/d3mh00733b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2023]
Abstract
In this study, cost-efficient atmospheric pressure chemical vapor deposition has been successfully developed to produce well-aligned high-quality monocrystalline Bi2S3 nanowires. By virtue of surface strain-induced energy band reconstruction, the Bi2S3 photodetectors demonstrate a broadband photoresponse across 370.6 to 1310 nm. Upon a gate voltage of 30 V, the responsivity, external quantum efficiency, and detectivity reach 23 760 A W-1, 5.55 × 106%, and 3.68 × 1013 Jones, respectively. The outstanding photosensitivity is ascribed to the high-efficiency spacial separation of photocarriers, enabled by synergy of the axial built-in electric field and type-II band alignment, as well as the pronounced photogating effect. Moreover, a polarization-discriminating photoresponse has been unveiled. For the first time, the correlation between quantum confinement and dichroic ratio is systematically explored. The optoelectronic dichroism is established to be negatively correlated with the cross dimension (i.e., width and height) of the channel. Specifically, upon 405 nm illumination, the optimized dichroic ratio reaches 2.4, the highest value among the reported Bi2S3 photodetectors. In the end, proof-of-concept multiplexing optical communications and broadband lensless polarimetric imaging have been implemented by exploiting the Bi2S3 nanowire photodetectors as light-sensing functional units. This study develops a quantum tailoring strategy for tailoring the polarization properties of (quasi-)1D material photodetectors whilst depicting new horizons for the next-generation opto-electronics industry.
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Affiliation(s)
- Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou 511443, Guangdong, P. R. China
| | - Wan Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Huanrong Liang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Rui Cui
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Weiwei Cao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Hailin Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Yuhang Ma
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Wenjing Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Yichao Zou
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Zexiang Deng
- School of Science, Guilin University of Aerospace Technology, Guilin 541004, Guangxi, P. R. China.
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
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29
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Zhan S, Zuo H, Liu B, Xu W, Cao J, Zhang Y, Wei X. Wafer-Scale Field-Effect Transistor-Type Sensor Using a Carbon Nanotube Film as a Channel for Ppb-Level Hydrogen Sulfide Detection. ACS Sens 2023; 8:3060-3067. [PMID: 37478418 DOI: 10.1021/acssensors.3c00653] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/23/2023]
Abstract
Sulfur hexafluoride is widely used in power equipment because of its excellent insulation and arc extinguishing properties. However, severe damage to power equipment may be caused and a large-scale collapse of the power grid may occur when SF6 is decomposed into H2S, SOF2, and SO2F2. It is difficult to detect the SF6 concentration as it is a kind of inert gas. Generally, the trace gas decomposed in the early stage of SF6 is detected to achieve the function of early warning. Consequently, it is of great significance to realize the real-time detection of trace gases decomposed from SF6 for the early fault diagnosis of power equipment. In this work, a wafer-scale gate-sensing carbon-based FET gas sensor is fabricated on a four-inch carbon wafer for the detection of H2S, a decomposition product of SF6. The carbon nanotubes with semiconductor properties and the noble metal Pt are respectively used as a channel and a sensing gate of the FET-type gas sensor, and the channel transmission layer and the sensing gate layer each play an independent role and do not interfere with each other by introducing the gate dielectric layer Y2O3, giving full play to their respective advantages to forming an integrated sensor of gas detection and signal amplification. The detection limit of the as-prepared gate-sensing carbon-based FET gas sensor can reach 20 ppb, and its response deviation is not more than 3% for the different batches of gas sensors. This work provides a potentially useful solution for the industrial production of miniaturized and integrated gas sensors.
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Affiliation(s)
- Shixiang Zhan
- School of Physics and Optoelectronics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, P. R. China
| | - Huamei Zuo
- School of Physics and Optoelectronics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, P. R. China
| | - Bin Liu
- School of Physics and Optoelectronics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, P. R. China
| | - Wangping Xu
- School of Physics and Optoelectronics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, P. R. China
| | - Juexian Cao
- School of Physics and Optoelectronics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, P. R. China
| | - Yong Zhang
- School of Physics and Optoelectronics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, P. R. China
| | - Xiaolin Wei
- School of Physics and Optoelectronics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, P. R. China
- College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang 421002, P. R. China
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30
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Thodkar K, Haluska M, Hierold C. Additive Influence of Top Metal Contact and Alumina Deposition on the Threshold Voltage of Suspended Carbon Nanotube Field-Effect Transistors. ACS OMEGA 2023; 8:27697-27702. [PMID: 37546614 PMCID: PMC10398841 DOI: 10.1021/acsomega.3c03602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 07/11/2023] [Indexed: 08/08/2023]
Abstract
One-dimensional nanostructures such as carbon nanotubes offer excellent properties useful for applications in gas sensors, piezoresistive devices, and radio frequency resonators. Considering their nanoscale form factor, carbon nanotubes (CNTs) are highly sensitive to surface adsorbents. This study presents the fabrication flow of CNT devices with extended passivated areas around electrical contacts between the CNT and source and drain electrodes. These types of structures could help in understanding the intrinsic CNT response by eliminating the analyte impact on the Schottky barrier regions of the CNT field-effect transistors (CNTFETs). The influence of multiple processing conditions on the electronic properties of CNTFETs with a suspended individual CNT used as the CNTFET channel is presented. Our findings show a threshold voltage shift in CNT ISD-Vg characteristics following the metal deposition and alumina atomic layer deposition.
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31
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Qian J, Cheng X, Zhou J, Cao J, Ding L. Aligned Carbon Nanotubes-Based Radiofrequency Transistors for Amplitude Amplification and Frequency Conversion at Millimeter Wave Band. ACS NANO 2023. [PMID: 37464538 DOI: 10.1021/acsnano.3c02739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
Aligned carbon nanotubes (ACNTs) have been considered as a promising candidate semiconductor with great potential in radiofrequency (RF) electronics due to their high carrier mobility/saturation velocity and small intrinsic capacitance. However, almost all of previously reported works focused on only the cutoff frequency, which is far from enough for practical RF application. In this work, given the speed advantage of ACNTs, we further explore amplitude amplification and frequency conversion capability of ACNTs based RF devices simultaneously, which are two basic functions in RF electronics. Considering there is no de-embedding process for amplification/conversion and reduction power loss, multifinger configuration RF transistors (still having current density around 1 mA/μm) were fabricated with cutoff frequency and maximum oscillation frequency exceeding 150 and 130 GHz, respectively. Based on dedicated ACNTs based RF FETs, we demonstrate almost 7 dB power gain (S21) with over 40 GHz 3-dB bandwidth for amplification and from -12.7 to -17 dB of conversion gain with over 25 dBm IIP3 (input third-order intercept point) of linearity for conversion simultaneously operating at 30 GHz in millimeter wave (mmWave) band both without any tuning instruments and matching technology assistance. The performance achieved here is the best among all the nanomaterials at the mmWave band.
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Affiliation(s)
- Jiale Qian
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
| | - Xiaohan Cheng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Jianshuo Zhou
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Juexian Cao
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
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32
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McCurdy RD, Delgado A, Jiang J, Zhu J, Wen ECH, Blackwell RE, Veber GC, Wang S, Louie SG, Fischer FR. Engineering Robust Metallic Zero-Mode States in Olympicene Graphene Nanoribbons. J Am Chem Soc 2023. [PMID: 37428750 PMCID: PMC10360063 DOI: 10.1021/jacs.3c01576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/12/2023]
Abstract
Metallic graphene nanoribbons (GNRs) represent a critical component in the toolbox of low-dimensional functional materials technology serving as 1D interconnects capable of both electronic and quantum information transport. The structural constraints imposed by on-surface bottom-up GNR synthesis protocols along with the limited control over orientation and sequence of asymmetric monomer building blocks during the radical step-growth polymerization have plagued the design and assembly of metallic GNRs. Here, we report the regioregular synthesis of GNRs hosting robust metallic states by embedding a symmetric zero-mode (ZM) superlattice along the backbone of a GNR. Tight-binding electronic structure models predict a strong nearest-neighbor electron hopping interaction between adjacent ZM states, resulting in a dispersive metallic band. First-principles density functional theory-local density approximation calculations confirm this prediction, and the robust, metallic ZM band of olympicene GNRs is experimentally corroborated by scanning tunneling spectroscopy.
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Affiliation(s)
- Ryan D McCurdy
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Aidan Delgado
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Jingwei Jiang
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Junmian Zhu
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Ethan Chi Ho Wen
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Raymond E Blackwell
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Gregory C Veber
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Shenkai Wang
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Steven G Louie
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Felix R Fischer
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Bakar Institute of Digital Materials for the Planet, Division of Computing, Data Science, and Society, University of California, Berkeley, California 94720, United States
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33
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Xie P, Sun Y, Chen C, Guo SY, Zhao Y, Jiao X, Hou PX, Liu C, Cheng HM. Enrichment of Large-Diameter Semiconducting Single-Walled Carbon Nanotubes by Conjugated Polymer-Assisted Separation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2001. [PMID: 37446517 DOI: 10.3390/nano13132001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2023] [Revised: 06/14/2023] [Accepted: 06/19/2023] [Indexed: 07/15/2023]
Abstract
Semiconducting single-walled carbon nanotubes (s-SWCNTs) with large diameters are highly desired in the construction of high performance optoelectronic devices. However, it is difficult to selectively prepare large-diameter s-SWCNTs since their structure and chemical stability are quite similar with their metallic counterparts. In this work, we use SWCNTs with large diameter as a raw material, conjugated polymer of regioregular poly-(3-dodecylthiophene) (rr-P3DDT) with long side chain as a wrapping agent to selectively separate large-diameter s-SWCNTs. It is found that s-SWCNTs with a diameter of ~1.9 nm are effectively enriched, which shows a clean surface. By using the sorted s-SWCNTs as a channel material, we constructed thin-film transistors showing charge-carrier mobilities higher than 10 cm2 V-1 s-1 and on/off ratios higher than 103.
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Affiliation(s)
- Piao Xie
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Chao Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Shu-Yu Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Yiming Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Xinyu Jiao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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34
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Schwarz M, Vethaak TD, Derycke V, Francheteau A, Iniguez B, Kataria S, Kloes A, Lefloch F, Lemme M, Snyder JP, Weber WM, Calvet LE. The Schottky barrier transistor in emerging electronic devices. NANOTECHNOLOGY 2023; 34:352002. [PMID: 37100049 DOI: 10.1088/1361-6528/acd05f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 04/25/2023] [Indexed: 06/16/2023]
Abstract
This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.
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Affiliation(s)
| | - Tom D Vethaak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Vincent Derycke
- Université Paris-Saclay, CEA, CNRS, NIMBE, LICSEN, Gif-sur-Yvette, F-91191, France
| | | | | | | | | | - Francois Lefloch
- University Grenoble Alps, GINP, CEA-IRIG-PHELIQS, Grenoble, France
| | | | | | - Walter M Weber
- Technische Universität Wien, Institute of Solid State Electronics, Vienna, Austria
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35
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Zhu J, Park JH, Vitale SA, Ge W, Jung GS, Wang J, Mohamed M, Zhang T, Ashok M, Xue M, Zheng X, Wang Z, Hansryd J, Chandrakasan AP, Kong J, Palacios T. Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform. NATURE NANOTECHNOLOGY 2023; 18:456-463. [PMID: 37106051 DOI: 10.1038/s41565-023-01375-6] [Citation(s) in RCA: 41] [Impact Index Per Article: 41.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 03/11/2023] [Indexed: 05/21/2023]
Abstract
Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS2) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal-oxide-semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal-organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm2 V-1 s-1. Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.
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Affiliation(s)
- Jiadi Zhu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Steven A Vitale
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Wenjun Ge
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Gang Seob Jung
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Jiangtao Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Mohamed Mohamed
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Maitreyi Ashok
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Mantian Xue
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Zhien Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | | | - Anantha P Chandrakasan
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
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36
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Giannetto M, Johnson EP, Watson A, Dimitrov E, Kurth A, Shi W, Fornasiero F, Meshot ER, Plata DL. Modifying the Molecular Structure of Carbon Nanotubes through Gas-Phase Reactants. ACS NANOSCIENCE AU 2023; 3:182-191. [PMID: 37096228 PMCID: PMC10119988 DOI: 10.1021/acsnanoscienceau.2c00052] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Revised: 01/14/2023] [Accepted: 01/18/2023] [Indexed: 04/26/2023]
Abstract
Current approaches to carbon nanotube (CNT) synthesis are limited in their ability to control the placement of atoms on the surface of nanotubes. Some of this limitation stems from a lack of understanding of the chemical bond-building mechanisms at play in CNT growth. Here, we provide experimental evidence that supports an alkyne polymerization pathway in which short-chained alkynes directly incorporate into the CNT lattice during growth, partially retaining their side groups and influencing CNT morphology. Using acetylene, methyl acetylene, and vinyl acetylene as feedstock gases, unique morphological differences were observed. Interwall spacing, a highly conserved value in natural graphitic materials, varied to accommodate side groups, increasing systematically from acetylene to methyl acetylene to vinyl acetylene. Furthermore, attenuated total reflectance Fourier-transfer infrared spectroscopy (ATR-FTIR) illustrated the existence of intact methyl groups in the multiwalled CNTs derived from methyl acetylene. Finally, the nanoscale alignment of the CNTs grown in vertically aligned forests differed systematically. Methyl acetylene induced the most tortuous growth while CNTs from acetylene and vinyl-acetylene were more aligned, presumably due to the presence of polymerizable unsaturated bonds in the structure. These results demonstrate that feedstock hydrocarbons can alter the atomic-scale structure of CNTs, which in turn can affect properties on larger scales. This information could be leveraged to create more chemically and structurally complex CNT structures, enable more sustainable chemical pathways by avoiding the need for solvents and postreaction modifications, and potentially unlock experimental routes to a host of higher-order carbonaceous nanomaterials.
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Affiliation(s)
- Michael
J. Giannetto
- Department
of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut06511, United States
| | - Eric P. Johnson
- Department
of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut06511, United States
- Department
of Civil and Environmental Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Adam Watson
- Department
of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut06511, United States
| | - Edgar Dimitrov
- Department
of Physics, University of California, Berkeley, Berkeley, California94720, United States
| | - Andrew Kurth
- Department
of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut06511, United States
| | - Wenbo Shi
- Department
of Civil and Environmental Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Francesco Fornasiero
- Physical
and Life Sciences Directorate, Lawrence
Livermore National Laboratory, Livermore, California94550, United States
| | - Eric R. Meshot
- Physical
and Life Sciences Directorate, Lawrence
Livermore National Laboratory, Livermore, California94550, United States
| | - Desiree L. Plata
- Department
of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut06511, United States
- Department
of Civil and Environmental Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
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37
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Liu G, Lv Z, Batool S, Li MZ, Zhao P, Guo L, Wang Y, Zhou Y, Han ST. Biocompatible Material-Based Flexible Biosensors: From Materials Design to Wearable/Implantable Devices and Integrated Sensing Systems. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2207879. [PMID: 37009995 DOI: 10.1002/smll.202207879] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 02/28/2023] [Indexed: 06/19/2023]
Abstract
Human beings have a greater need to pursue life and manage personal or family health in the context of the rapid growth of artificial intelligence, big data, the Internet of Things, and 5G/6G technologies. The application of micro biosensing devices is crucial in connecting technology and personalized medicine. Here, the progress and current status from biocompatible inorganic materials to organic materials and composites are reviewed and the material-to-device processing is described. Next, the operating principles of pressure, chemical, optical, and temperature sensors are dissected and the application of these flexible biosensors in wearable/implantable devices is discussed. Different biosensing systems acting in vivo and in vitro, including signal communication and energy supply are then illustrated. The potential of in-sensor computing for applications in sensing systems is also discussed. Finally, some essential needs for commercial translation are highlighted and future opportunities for flexible biosensors are considered.
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Affiliation(s)
- Gang Liu
- Institute of Microscale Optoelectronics and College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ziyu Lv
- Institute of Microscale Optoelectronics and College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Saima Batool
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | | | - Pengfei Zhao
- Institute of Microscale Optoelectronics and College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Liangchao Guo
- College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127, P. R. China
| | - Yan Wang
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics and College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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38
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Influence of the chemical structure of aromatic dispersants on the dispersion of carbon nanotubes. Colloids Surf A Physicochem Eng Asp 2023. [DOI: 10.1016/j.colsurfa.2023.131081] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
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39
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Abdulhameed A, Halim MM, Halin IA. Dielectrophoretic alignment of carbon nanotubes: theory, applications, and future. NANOTECHNOLOGY 2023; 34:242001. [PMID: 36921341 DOI: 10.1088/1361-6528/acc46c] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Accepted: 03/14/2023] [Indexed: 06/18/2023]
Abstract
Carbon nanotubes (CNTs) are nominated to be the successor of several semiconductors and metals due to their unique physical and chemical properties. It has been concerning that the anisotropic and low controllability of CNTs impedes their adoption in commercial applications. Dielectrophoresis (DEP) is known as the electrokinetics motion of polarizable nanoparticles under the influence of nonuniform electric fields. The uniqueness of this phenomenon allows DEP to be employed as a novel method to align, assemble, separate, and manipulate CNTs suspended in liquid mediums. This article begins with a brief overview of CNT structure and production, with the emphasize on their electrical properties and response to electric fields. The DEP phenomenon as a CNT alignment method is demonstrated and graphically discussed, along with its theory, procedure, and parameters. We also discussed the side forces that arise in DEP systems and how they negatively or positively affect the CNT alignment. The article concludes with a brief review of CNT-based devices fabricated using DEP, as well as the method's limitations and future prospects.
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Affiliation(s)
| | - Mohd Mahadi Halim
- School of Physics, Universiti Sains Malaysia, 11800 USM Penang, Malaysia
| | - Izhal Abdul Halin
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Universiti Putra Malaysia, Serdang, 43400, Malaysia
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40
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Su W, Li X, Li L, Yang D, Wang F, Wei X, Zhou W, Kataura H, Xie S, Liu H. Chirality-dependent electrical transport properties of carbon nanotubes obtained by experimental measurement. Nat Commun 2023; 14:1672. [PMID: 36966164 PMCID: PMC10039901 DOI: 10.1038/s41467-023-37443-7] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Accepted: 03/15/2023] [Indexed: 03/27/2023] Open
Abstract
Establishing the relationship between the electrical transport properties of single-wall carbon nanotubes (SWCNTs) and their structures is critical for the design of high-performance SWCNT-based electronic and optoelectronic devices. Here, we systematically investigated the effect of the chiral structures of SWCNTs on their electrical transport properties by measuring the performance of thin-film transistors constructed by eleven distinct (n, m) single-chirality SWCNT films. The results show that, even for SWCNTs with the same diameters but different chiral angles, the difference in the on-state current or carrier mobility could reach an order of magnitude. Further analysis indicates that the electrical transport properties of SWCNTs have strong type and family dependence. With increasing chiral angle for the same-family SWCNTs, Type I SWCNTs exhibit increasing on-state current and mobility, while Type II SWCNTs show the reverse trend. The differences in the electrical properties of the same-family SWCNTs with different chiralities can be attributed to their different electronic band structures, which determine the contact barrier between electrodes and SWCNTs, intrinsic resistance and intertube contact resistance. Our present findings provide an important physical basis for performance optimization and application expansion of SWCNT-based devices.
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Affiliation(s)
- Wei Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Xiao Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Linhai Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Dehua Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Futian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Xiaojun Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Weiya Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Hiromichi Kataura
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Sishen Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Huaping Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
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41
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Qiao Y, Luo J, Cui T, Liu H, Tang H, Zeng Y, Liu C, Li Y, Jian J, Wu J, Tian H, Yang Y, Ren TL, Zhou J. Soft Electronics for Health Monitoring Assisted by Machine Learning. NANO-MICRO LETTERS 2023; 15:66. [PMID: 36918452 PMCID: PMC10014415 DOI: 10.1007/s40820-023-01029-1] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Accepted: 01/05/2023] [Indexed: 06/18/2023]
Abstract
Due to the development of the novel materials, the past two decades have witnessed the rapid advances of soft electronics. The soft electronics have huge potential in the physical sign monitoring and health care. One of the important advantages of soft electronics is forming good interface with skin, which can increase the user scale and improve the signal quality. Therefore, it is easy to build the specific dataset, which is important to improve the performance of machine learning algorithm. At the same time, with the assistance of machine learning algorithm, the soft electronics have become more and more intelligent to realize real-time analysis and diagnosis. The soft electronics and machining learning algorithms complement each other very well. It is indubitable that the soft electronics will bring us to a healthier and more intelligent world in the near future. Therefore, in this review, we will give a careful introduction about the new soft material, physiological signal detected by soft devices, and the soft devices assisted by machine learning algorithm. Some soft materials will be discussed such as two-dimensional material, carbon nanotube, nanowire, nanomesh, and hydrogel. Then, soft sensors will be discussed according to the physiological signal types (pulse, respiration, human motion, intraocular pressure, phonation, etc.). After that, the soft electronics assisted by various algorithms will be reviewed, including some classical algorithms and powerful neural network algorithms. Especially, the soft device assisted by neural network will be introduced carefully. Finally, the outlook, challenge, and conclusion of soft system powered by machine learning algorithm will be discussed.
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Affiliation(s)
- Yancong Qiao
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China.
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China.
| | - Jinan Luo
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Tianrui Cui
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Haidong Liu
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Hao Tang
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Yingfen Zeng
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Chang Liu
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Yuanfang Li
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Jinming Jian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jingzhi Wu
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Yi Yang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Jianhua Zhou
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China.
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China.
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42
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Qin X, Li D, Feng L, Wang Y, Zhang L, Qian L, Zhao W, Xu N, Chi X, Wang S, He M. (n, m) Distribution of Single-Walled Carbon Nanotubes Grown from a Non-Magnetic Palladium Catalyst. Molecules 2023; 28:molecules28062453. [PMID: 36985423 PMCID: PMC10051104 DOI: 10.3390/molecules28062453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 03/05/2023] [Accepted: 03/06/2023] [Indexed: 03/30/2023] Open
Abstract
Non-magnetic metal nanoparticles have been previously applied for the growth of single-walled carbon nanotubes (SWNTs). However, the activation mechanisms of non-magnetic metal catalysts and chirality distribution of synthesized SWNTs remain unclear. In this work, the activation mechanisms of non-magnetic metal palladium (Pd) particles supported by the magnesia carrier and thermodynamic stabilities of nucleated SWNTs with different (n, m) are evaluated by theoretical simulations. The electronic metal-support interaction between Pd and magnesia upshifts the d-band center of Pd, which promotes the chemisorption and dissociation of carbon precursor molecules on the Pd surface, making the activation of magnesia-supported non-magnetic Pd catalysts for SWNT growth possible. To verify the theoretical results, a porous magnesia supported Pd catalyst is developed for the bulk synthesis of SWNTs by chemical vapor deposition. The chirality distribution of Pd-grown SWNTs is understood by operating both Pd-SWNT interfacial formation energy and SWNT growth kinetics. This work not only helps to gain new insights into the activation of catalysts for growing SWNTs, but also extends the use of non-magnetic metal catalysts for bulk synthesis of SWNTs.
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Affiliation(s)
- Xiaofan Qin
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
| | - Dong Li
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
| | - Lihu Feng
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
| | - Ying Wang
- State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Lili Zhang
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Liu Qian
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Wenyue Zhao
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
| | - Ningning Xu
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
| | - Xinyan Chi
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
| | - Shiying Wang
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
| | - Maoshuai He
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
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43
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Zheng X, Zhang Z, Zhou G, Zou M, Zhang F, Hou PX, Shi C, Cheng HM, Wang M, Liu C. Efficient fabrication of single-wall carbon nanotube nanoreactors by defect-induced cutting. NANOSCALE 2023; 15:3931-3939. [PMID: 36723243 DOI: 10.1039/d2nr06696c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Single-wall carbon nanotubes (SWCNTs) with ultra-thin channels are considered promising nanoreactors for confined catalysis, chemical reactions, and drug delivery. The fabrication of SWCNT nanoreactors by cutting usually suffers from low efficiency and poor controllability. Here we develop a defect-induced gas etching method to efficiently cut SWCNTs and to obtain nanoreactors with ultrasmall confined space. H2 plasma treatment was performed to generate defects in the walls of SWCNTs, then H2O vapor was used as a "knife" to cut SWCNTs at the defect sites, and short cut-SWCNTs with an average length of 175 nm were controllably obtained with a high yield of 75% under optimized conditions. WO3@SWCNT derivatives with different morphologies were synthesized using short cut-SWCNTs as nanoreactors. The radiation resistance of WO3@SWCNT hybrids improved obviously, thus providing a platform for the synthesis of novel SWCNT-based derivatives with fascinating properties.
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Affiliation(s)
- Xue Zheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China.
| | - Zichu Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, P.R. China
| | - Gang Zhou
- Shi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Mengke Zou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, P.R. China
| | - Feng Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, P.R. China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, P.R. China
| | - Chao Shi
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P.R. China
| | - Mingguang Wang
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China.
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, P.R. China
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44
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Suzuki D, Nonoguchi Y, Shimamoto K, Terasaki N. Outstanding Robust Photo- and Thermo-Electric Applications with Stabilized n-Doped Carbon Nanotubes by Parylene Coating. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9873-9882. [PMID: 36781167 PMCID: PMC9951210 DOI: 10.1021/acsami.2c21347] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/27/2022] [Accepted: 01/20/2023] [Indexed: 06/18/2023]
Abstract
Stabilization techniques for n-doped carbon nanotubes (CNTs) are essential for the practical use of CNT devices. However, none of the reported n-dopants have sufficient robustness in a practical environment. Herein, we report a highly stable technique for fabricating n-doped CNT films. We elucidate the mechanism by which air stability can be achieved by completely covering CNTs with n-dopants to prevent oxidation; consequently, the stability is lost when exposed to scratches or moisture. Therefore, we introduce parylene as a protective layer for n-doped CNTs and achieve air stability for more than 365 d. Moreover, we demonstrate outstanding robust thermo-electric power generation from strong acids, alkalis, and alcohols, which cannot be realized with conventional air-stable n-dopants. The proposed stabilization technique is versatile and can be applied to various n-dopants. Thus, it is expected to be a key technology in the practical application of CNT devices.
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Affiliation(s)
- Daichi Suzuki
- Sensing
System Research Center, National Institute
of Advanced Industrial Science and Technology (AIST), Saga 841-0052, Japan
| | - Yoshiyuki Nonoguchi
- Faculty
of Materials Science and Engineering, Kyoto
Institute of Technology, Kyoto 606-8585, Japan
| | - Kazumasa Shimamoto
- Nanomaterials
Research Institute, National Institute of
Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
| | - Nao Terasaki
- Sensing
System Research Center, National Institute
of Advanced Industrial Science and Technology (AIST), Saga 841-0052, Japan
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45
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Zhu M, Lu P, Wang X, Chen Q, Zhu H, Zhang Y, Zhou J, Xu H, Han Z, Han J, Chen R, Li B, Peng LM, Zhang Z. Ultra-Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2204537. [PMID: 36366937 DOI: 10.1002/smll.202204537] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 10/04/2022] [Indexed: 06/16/2023]
Abstract
Carbon nanotube (CNT) field-effect transistors (FETs) have been considered ideal building blocks for radiation-hard integrated circuits (ICs), the demand for which is exponentially growing, especially in outer space exploration and the nuclear industry. Many studies on the radiation tolerance of CNT-based electronics have focused on the total ionizing dose (TID) effect, while few works have considered the single event effects (SEEs) and displacement damage (DD) effect, which are more difficult to measure but may be more important in practical applications. Measurements of the SEEs and DD effect of CNT FETs and ICs are first executed and then presented a comprehensive radiation effect analysis of CNT electronics. The CNT ICs without special irradiation reinforcement technology exhibit a comprehensive radiation tolerance, including a 1 × 104 MeVcm2 mg-1 level of the laser-equivalent threshold linear energy transfer (LET) for SEEs, 2.8 × 1013 MeV g-1 for DD and 2 Mrad (Si) for TID, which are at least four times higher than those in conventional radiation-hardened ICs. The ultrahigh intrinsic comprehensive radiation tolerance will promote the applications of CNT ICs in high-energy solar and cosmic radiation environments.
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Affiliation(s)
- Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Peng Lu
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, P. R. China
| | - Xuan Wang
- National Space Science Center, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qian Chen
- National Space Science Center, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Huiping Zhu
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, P. R. China
| | - Yajie Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Jianshuo Zhou
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Haitao Xu
- Beijing Institute of Carbon-based Integrated Circuits, Beijing, 100195, P. R. China
| | - Zhengsheng Han
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jianwei Han
- National Space Science Center, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Rui Chen
- National Space Science Center, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Bo Li
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, P. R. China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing, 100195, P. R. China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing, 100195, P. R. China
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46
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Liu C, Cao Y, Wang B, Zhang Z, Lin Y, Xu L, Yang Y, Jin C, Peng LM, Zhang Z. Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays. ACS NANO 2022; 16:21482-21490. [PMID: 36416375 DOI: 10.1021/acsnano.2c10007] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors (FETs) and great potential for applications in future digital integrated circuits (ICs). However, high-performance N-type FETs (N-FETs) have not yet been implemented with A-CNTs, making development of complementary metal-oxide-semiconductor (CMOS) technology, a necessary component for modern digital ICs, impossible. In this work, we reveal the mechanism hindering the realization of A-CNT N-FETs contacted by low-work-function metals and develop corresponding solutions to promote the performance of N-FETs to that of P-type FETs (P-FETs). The fabricated scandium (Sc)-contacted A-CNT N-FET with a 100 nm gate length exhibits an on-state current (Ion) of 800 μA/μm and a peak transconductance (gm) of 250 μS/μm, representing the highest performance of CNT-based N-FETs to date. Moreover, CMOS technology has been developed to realize N- and P-FETs with symmetric high performance based on A-CNTs. The fabricated A-CNT CMOS FETs show electron and hole mobilities of 325 and 241 cm2 V-1 s-1, respectively, which are slightly higher than the corresponding values of Si CMOS transistors. Our scalable fabrication of A-CNT CMOS FETs with comparable electronic performance to Si CMOS will promote the application of CNT-based electronics in digital ICs.
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Affiliation(s)
- Chenchen Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Yu Cao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Bo Wang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zixuan Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yanxia Lin
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Yingjun Yang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
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47
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Kim J, Oh Y, Shin J, Yang M, Shin N, Shekhar S, Hong S. Nanoscale Mapping of Carrier Mobilities in the Ballistic Transports of Carbon Nanotube Networks. ACS NANO 2022; 16:21626-21635. [PMID: 36394466 DOI: 10.1021/acsnano.2c10715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Much progress has been made in the nanoscale analysis of nanostructures, while the mapping of key charge transport properties such as a carrier mobility remains a challenge, especially for one-dimensional systems. Here, we report the nanoscale mapping of carrier mobilities in carbon nanotube (CNT) networks and show that charge transport behaviors varied depending on network structures. In this work, the spatial distribution of localized charge transport properties such as mobilities and charge trap densities in CNT networks were mapped via a scanning noise microscopy. The mobility map was obtained from the conductivity maps measured at different back-gate biases, showing up to two orders of mobility variations depending on localized network structures. Furthermore, from the maps, correlations between mobility/conductivity and charge trap density were analyzed to determine charge transport mechanisms. In metallic CNT networks, the regions with rather high (low) or low (high) charge trap densities (mobilities) exhibited a diffusive or ballistic transport behavior, respectively. Interestingly, semiconducting CNT networks also exhibited a gradual transition from a diffusive to a ballistic transport behavior as the CNT mobility was increased by reaching the on-state with negative gate biases. The mapping of the cross-patterned CNT network showed that metallic CNT electrodes could achieve a good electrical contact with semiconducting CNTs without high contact resistance regions. Since this method allowed one to map versatile charge transport properties such as mobility, conductivity, and charge trap density, it can be a powerful tool for basic research about charge transport phenomena and practical device applications.
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Affiliation(s)
- Jeongsu Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul08826, Korea
| | - Yuhyeon Oh
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul08826, Korea
| | - Junghyun Shin
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul08826, Korea
| | - Myungjae Yang
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul08826, Korea
| | - Narae Shin
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul08826, Korea
| | - Shashank Shekhar
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul08826, Korea
| | - Seunghun Hong
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul08826, Korea
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48
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Li K, Kinoshita Y, Sakai D, Kawano Y. Recent Progress in Development of Carbon-Nanotube-Based Photo-Thermoelectric Sensors and Their Applications in Ubiquitous Non-Destructive Inspections. MICROMACHINES 2022; 14:61. [PMID: 36677122 PMCID: PMC9865119 DOI: 10.3390/mi14010061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Revised: 12/18/2022] [Accepted: 12/19/2022] [Indexed: 06/17/2023]
Abstract
The photo-thermoelectric (PTE) effect in electronic materials effectively combines photo-absorption-induced local heating and associated thermoelectric conversion for uncooled and broadband photo-detection. In particular, this work comprehensively summarizes the operating mechanism of carbon nanotube (CNT)-film-based PTE sensors and ubiquitous non-destructive inspections realized by exploiting the material properties of CNT films. Formation of heterogeneous material junctions across the CNT-film-based PTE sensors, namely photo-detection interfaces, triggers the Seebeck effect with photo-absorption-induced local heating. Typical photo-detection interfaces include a channel-electrode boundary and a junction between P-type CNTs and N-type CNTs (PN junctions). While the original CNT film channel exhibits positive Seebeck coefficient values, the material selections of the counterpart freely govern the intensity and polarity of the PTE response signals. Based on these operating mechanisms, CNT film PTE sensors demonstrate a variety of physical and chemical non-destructive inspections. The device aggregates broad multi-spectral optical information regarding the targets and reconstructs their inner composite or layered structures. Arbitrary deformations of the device are attributed to the macroscopic flexibility of the CNT films to further monitor targets from omni-directional viewing angles without blind spots. Detection of blackbody radiation from targets using the device also visualizes their behaviors and associated changes.
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Affiliation(s)
- Kou Li
- Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, School of Engineering, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
| | - Yuya Kinoshita
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551, Japan
| | - Daiki Sakai
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551, Japan
| | - Yukio Kawano
- Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, School of Engineering, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551, Japan
- National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo 101-8430, Japan
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49
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Shen Y, Dong Z, Sun Y, Guo H, Wu F, Li X, Tang J, Liu J, Wu X, Tian H, Ren TL. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201916. [PMID: 35535757 DOI: 10.1002/adma.202201916] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal chalcogenide (TMDC) materials, such as MoS2 , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.
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Affiliation(s)
- Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zuoyuan Dong
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Yabin Sun
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Hao Guo
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xianglong Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Jun Tang
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Jun Liu
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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50
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Chu F, Zhou W, Zhou R, Li S, Liu D, Zheng Z, Li J, Zhang Y. Strain-Tunable Electronic and Transport Properties of One-Dimensional Fibrous Phosphorus Nanotubes. J Phys Chem Lett 2022; 13:10778-10785. [PMID: 36374552 DOI: 10.1021/acs.jpclett.2c02854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The one-dimensional van der Waals (1D vdW) material fibrous red phosphorus (FRP) nanotubes are a promising direct-bandgap semiconductor with high carrier mobility and anisotropic optical responses because of low deformation potential and dangling-bond-free anisotropic interface. Employing first-principles calculations, we captured the potential of 1D FRP nanotubes. The thermal stability of 1D FRP nanotubes was confirmed by phonon calculation. Meanwhile, Raman spectroscopy indicated the strong vibration mode (366 cm-1) is along the phosphorus nanotube. Interestingly, spatial anisotropy bandgaps were found along with various stacking orientations. The charge transport calculations showed that the 1D FRP nanotube has a high hole mobility (499.2 cm2 V-1 s-1), considering the weak acoustic phonon scattering. More importantly, we found that the hole mobility changes dramatically (down to 7.1 cm2 V-1 s-1) under the strain, and the strain-dependent charge transport property of 1D FRP nanotubes could be considered to have many potential applications for electronics, optoelectronics, and switching devices.
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Affiliation(s)
- Feihong Chu
- Key Laboratory of Advanced Functional Materials and Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing100124, China
| | - Wencai Zhou
- Key Laboratory of Advanced Functional Materials and Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing100124, China
| | - Rongkun Zhou
- Key Laboratory of Advanced Functional Materials and Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing100124, China
| | - Songyu Li
- Key Laboratory of Advanced Functional Materials and Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing100124, China
| | - Danmin Liu
- Key Laboratory of Advanced Functional Materials and Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing100124, China
| | - Zilong Zheng
- Key Laboratory of Advanced Functional Materials and Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing100124, China
| | - Jingzhen Li
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing100124, China
| | - Yongzhe Zhang
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing100124, China
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