1
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Li D, Li Z, Pan C, Sun Y, Zhou J, Yangdong X, Xu X, Liu L, Wang H, Chen Y, Song X, Liu P, Zhou X, Liang SJ, Miao F, Zhai T. Ionic Photovoltaics-in-Memory in van der Waals Material. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406984. [PMID: 39039978 DOI: 10.1002/adma.202406984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/15/2024] [Indexed: 07/24/2024]
Abstract
The photovoltaic effect is gaining growing attention in the optoelectronics field due to its low power consumption, sustainable nature, and high efficiency. However, the photovoltaic effects hitherto reported are hindered by the stringent band-alignment requirement or inversion symmetry-breaking, and are challenging for achieving multifunctional photovoltaic properties (such as reconfiguration, nonvolatility, and so on). Here, a novel ionic photovoltaic effect in centrosymmetric CdSb2Se3Br2 that can overcome these limitations is demonstrated. The photovoltaic effect displays significant anisotropy, with the photocurrent being most apparent along the CdBr2 chains while absent perpendicular to them. Additionally, the device shows electrically-induced nonvolatile photocurrent switching characteristics. The photovoltaic effect is attributed to the modulation of the built-in electric field through the migration of Br ions. Using these unique photovoltaic properties, a highly secure circuit with electrical and optical keys is successfully implemented. The findings not only broaden the understanding of the photovoltaic mechanism, but also provide a new material platform for the development of in-memory sensing and computing devices.
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Affiliation(s)
- Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Chen Pan
- Institute of Interdisciplinary of Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Yan Sun
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Xingjian Yangdong
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yunxin Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xingyu Song
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pengbin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shi-Jun Liang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Feng Miao
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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2
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Xie X, Leng P, Ding Z, Yang J, Yan J, Zhou J, Li Z, Ai L, Cao X, Jia Z, Zhang Y, Zhao M, Zhu W, Gao Y, Dong S, Xiu F. Surface photogalvanic effect in Ag 2Te. Nat Commun 2024; 15:5651. [PMID: 38969644 PMCID: PMC11226672 DOI: 10.1038/s41467-024-49576-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Accepted: 06/11/2024] [Indexed: 07/07/2024] Open
Abstract
The bulk photovoltaic effect (BPVE) in non-centrosymmetric materials has attracted significant attention in recent years due to its potential to surpass the Shockley-Queisser limit. Although these materials are strictly constrained by symmetry, progress has been made in artificially reducing symmetry to stimulate BPVE in wider systems. However, the complexity of these techniques has hindered their practical implementation. In this study, we demonstrate a large intrinsic photocurrent response in centrosymmetric topological insulator Ag2Te, attributed to the surface photogalvanic effect (SPGE), which is induced by symmetry reduction of the surface. Through diverse spatially-resolved measurements on specially designed devices, we directly observe that SPGE in Ag2Te arises from the difference between two opposite photocurrent flows generated from the top and bottom surfaces. Acting as an efficient SPGE material, Ag2Te demonstrates robust performance across a wide spectral range from visible to mid-infrared, making it promising for applications in solar cells and mid-infrared detectors. More importantly, SPGE generated on low-symmetric surfaces can potentially be found in various systems, thereby inspiring a broader range of choices for photovoltaic materials.
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Affiliation(s)
- Xiaoyi Xie
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Pengliang Leng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zhenyu Ding
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Jinshan Yang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Jingyi Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Junchen Zhou
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Xiangyu Cao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zehao Jia
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Yuda Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Minhao Zhao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yang Gao
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China.
| | - Shaoming Dong
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, 201315, China.
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3
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Wang Z, Wan T, Ma S, Chai Y. Multidimensional vision sensors for information processing. NATURE NANOTECHNOLOGY 2024; 19:919-930. [PMID: 38877323 DOI: 10.1038/s41565-024-01665-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Accepted: 03/07/2024] [Indexed: 06/16/2024]
Abstract
The visual scene in the physical world integrates multidimensional information (spatial, temporal, polarization, spectrum and so on) and typically shows unstructured characteristics. Conventional image sensors cannot process this multidimensional vision data, creating a need for vision sensors that can efficiently extract features from substantial multidimensional vision data. Vision sensors are able to transform the unstructured visual scene into featured information without relying on sophisticated algorithms and complex hardware. The response characteristics of sensors can be abstracted into operators with specific functionalities, allowing for the efficient processing of perceptual information. In this Review, we delve into the hardware implementation of multidimensional vision sensors, exploring their working mechanisms and design principles. We exemplify multidimensional vision sensors built on emerging devices and silicon-based system integration. We further provide benchmarking metrics for multidimensional vision sensors and conclude with the principle of device-system co-design and co-optimization.
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Affiliation(s)
- Zhaoqing Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Sijie Ma
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
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4
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Dai M, Wang C, Sun F, Wang QJ. On-chip photodetection of angular momentums of vortex structured light. Nat Commun 2024; 15:5396. [PMID: 38926397 PMCID: PMC11208514 DOI: 10.1038/s41467-024-49855-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Accepted: 06/21/2024] [Indexed: 06/28/2024] Open
Abstract
Structured vortex light with orbital angular momentum (OAM) shows great promise for high-bandwidth optical communications, quantum information and computing, optical tweezers, microscopy, astronomy, among others. Generating, controlling, and detecting of vortex light by all-electrical means is at the heart of next generation nanophotonic platforms. However, on-chip electrical photodetection of structured vortex light remains challenging. Here, we propose an on-chip photodetector based on 2D broadband thermoelectric material (PdSe2) with a well-designed spin-Hall couplers to directly characterize angular momentum modes of vortex structured light. Photothermoelectric responses in the PdSe2 nanoflake, excited by the focusing surface plasmons, show a magnitude proportional to the total angular momentum modes of the infrared vortex beams, thereby achieving direct detection of spin and orbital angular momentum, as well as the chirality and ellipticity of scalar vortex lights. Our works provide a promising strategy for developing on-chip angular momentum optoelectronic devices, which play a key role in the next-generation high-capacity optical communications, quantum information and computing, imaging, and other photonic systems.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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5
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Fan Y, Huang W, Zhu F, Liu X, Jin C, Guo C, An Y, Kivshar Y, Qiu CW, Li W. Dispersion-assisted high-dimensional photodetector. Nature 2024; 630:77-83. [PMID: 38750367 DOI: 10.1038/s41586-024-07398-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Accepted: 04/09/2024] [Indexed: 06/07/2024]
Abstract
Intensity, polarization and wavelength are intrinsic characteristics of light. Characterizing light with arbitrarily mixed information on polarization and spectrum is in high demand1-4. Despite the extensive efforts in the design of polarimeters5-18 and spectrometers19-27, concurrently yielding high-dimensional signatures of intensity, polarization and spectrum of the light fields is challenging and typically requires complicated integration of polarization- and/or wavelength-sensitive elements in the space or time domains. Here we demonstrate that simple thin-film interfaces with spatial and frequency dispersion can project and tailor polarization and spectrum responses in the wavevector domain. By this means, high-dimensional light information can be encoded into single-shot imaging and deciphered with the assistance of a deep residual network. To the best of our knowledge, our work not only enables full characterization of light with arbitrarily mixed full-Stokes polarization states across a broadband spectrum with a single device and a single measurement but also presents comparable, if not better, performance than state-of-the-art single-purpose miniaturized polarimeters or spectrometers. Our approach can be readily used as an alignment-free retrofit for the existing imaging platforms, opening up new paths to ultra-compact and high-dimensional photodetection and imaging.
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Affiliation(s)
- Yandong Fan
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Weian Huang
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Fei Zhu
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Xingsi Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Chunqi Jin
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
- University of Chinese Academy of Sciences, Beijing, China.
| | - Chenzi Guo
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
| | - Yang An
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
| | - Yuri Kivshar
- Nonlinear Physics Centre, Research School of Physics, Australian National University, Canberra, Australian Capital Territory, Australia
- Qingdao Innovation and Development Center, Harbin Engineering University, Qingdao, China
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
| | - Wei Li
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
- University of Chinese Academy of Sciences, Beijing, China.
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6
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Darweesh R, Yadav RK, Adler E, Poplinger M, Levi A, Lee JJ, Leshem A, Ramasubramaniam A, Xia F, Naveh D. Nonlinear self-calibrated spectrometer with single GeSe-InSe heterojunction device. SCIENCE ADVANCES 2024; 10:eadn6028. [PMID: 38758797 PMCID: PMC11100572 DOI: 10.1126/sciadv.adn6028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 04/15/2024] [Indexed: 05/19/2024]
Abstract
Computational spectrometry is an emerging field that uses photodetection in conjunction with numerical algorithms for spectroscopic measurements. Compact single photodetectors made from layered materials are particularly attractive since they eliminate the need for bulky mechanical and optical components used in traditional spectrometers and can easily be engineered as heterostructures to optimize device performance. However, such photodetectors are typically nonlinear devices, which adds complexity to extracting optical spectra from their response. Here, we train an artificial neural network to recover the full nonlinear spectral photoresponse of a single GeSe-InSe p-n heterojunction device. The device has a spectral range of 400 to 1100 nm, a small footprint of ~25 × 25 square micrometers, and a mean reconstruction error of 2 × 10-4 for the power spectrum at 0.35 nanometers. Using our device, we demonstrate a solution to metamerism, an apparent matching of colors with different power spectral distributions, which is a fundamental problem in optical imaging.
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Affiliation(s)
- Rana Darweesh
- Faculty of Engineering, Bar-Ilan University, 52900 Ramat-Gan, Israel
- Institue of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat-Gan, Israel
| | - Rajesh Kumar Yadav
- Faculty of Engineering, Bar-Ilan University, 52900 Ramat-Gan, Israel
- Institue of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat-Gan, Israel
| | - Elior Adler
- Faculty of Engineering, Bar-Ilan University, 52900 Ramat-Gan, Israel
- Institue of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat-Gan, Israel
| | - Michal Poplinger
- Faculty of Engineering, Bar-Ilan University, 52900 Ramat-Gan, Israel
- Institue of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat-Gan, Israel
| | - Adi Levi
- Faculty of Engineering, Bar-Ilan University, 52900 Ramat-Gan, Israel
- Institue of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat-Gan, Israel
| | - Jea-Jung Lee
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Amir Leshem
- Faculty of Engineering, Bar-Ilan University, 52900 Ramat-Gan, Israel
| | - Ashwin Ramasubramaniam
- Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, MA 01003, USA
- Materials Science and Engineering Graduate Program, University of Massachusetts, Amherst, MA 01003, USA
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Doron Naveh
- Faculty of Engineering, Bar-Ilan University, 52900 Ramat-Gan, Israel
- Institue of Nanotechnology and Advanced Materials, Bar-Ilan University, 52900 Ramat-Gan, Israel
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7
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Wu Q, Qian J, Wang Y, Xing L, Wei Z, Gao X, Li Y, Liu Z, Liu H, Shu H, Yin J, Wang X, Peng H. Waveguide-integrated twisted bilayer graphene photodetectors. Nat Commun 2024; 15:3688. [PMID: 38693107 PMCID: PMC11063206 DOI: 10.1038/s41467-024-47925-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Accepted: 04/16/2024] [Indexed: 05/03/2024] Open
Abstract
Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W-1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s-1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.
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Affiliation(s)
- Qinci Wu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Jun Qian
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Luwen Xing
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
- School of Engineering, Peking University, 100871, Beijing, P. R. China
| | - Ziyi Wei
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
| | - Xin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Yurui Li
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Hongtao Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
| | - Haowen Shu
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
| | - Jianbo Yin
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China.
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China.
| | - Xingjun Wang
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China.
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China.
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China.
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8
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Shen D, Yang H, Patel T, Rhodes DA, Timusk T, Zhou YN, Kim NY, Tsen AW. Gate-Tunable Multiband van der Waals Photodetector and Polarization Sensor. ACS NANO 2024; 18:11193-11199. [PMID: 38626400 DOI: 10.1021/acsnano.4c00181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
A single photodetector with tunable detection wavelengths and polarization sensitivity can potentially be harnessed for diverse optical applications ranging from imaging and sensing to telecommunications. Such a device will require the combination of multiple material systems with different structures, band gaps, and photoelectrical responses, which is extremely difficult to engineer using traditional epitaxial films. Here, we develop a multifunctional and high-performance photosensor using all van der Waals materials. The device features a gate-tunable spectral response that is switchable between near-infrared/visible and short-/midwave infrared, as well as broad-band operation, at room temperature. The linear polarization sensitivity in the telecommunication O-band can also be directly modulated between horizontal, vertical, and nonpolarizing modes. These effects originate from the balance of photocurrent generation in two of the active layers that can be manipulated by an electric field. The photodetector features high detectivity (>109 cmHz1/2W-1) together with fast operation speed (∼1 MHz) and can be further exploited for dual visible and infrared imaging.
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Affiliation(s)
- Daozhi Shen
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - HeeBong Yang
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Tarun Patel
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Daniel A Rhodes
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Thomas Timusk
- Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1, Canada
| | - Y Norman Zhou
- Centre for Advanced Materials Joining and Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Na Young Kim
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Adam W Tsen
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
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9
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Cai Y, Chen Y, Dorfman K, Xin X, Wang X, Huang K, Wu E. Mid-infrared single-photon upconversion spectroscopy enabled by nonlocal wavelength-to-time mapping. SCIENCE ADVANCES 2024; 10:eadl3503. [PMID: 38640245 PMCID: PMC11029809 DOI: 10.1126/sciadv.adl3503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 03/15/2024] [Indexed: 04/21/2024]
Abstract
Ultrasensitive spectroscopy is an essential component in mid-infrared (MIR) technology. However, the drawbacks of MIR detectors pose challenges to robust MIR spectroscopy at the single-photon level. We propose an MIR single-photon frequency upconversion spectroscopy nonlocally mapping the MIR information to the time domain. Broadband MIR photons from spontaneous parametric downconversion are frequency-upconverted to the near-infrared band with quantum correlation preservation. Via the group delay of fiber, the MIR spectral information within a 1.18-micrometer bandwidth of 2.76 to 3.94 micrometers is then successfully projected to arrival times of correlated photon pairs. Under the conditions of 6.4 × 106 photons per second illumination, the transmission spectra of polymers with single-photon sensitivity are demonstrated using single-pixel detectors. The developed approach circumvents scanning and frequency selection instability, which stands out for its inherent compatibility for evolving environments and scalability for various wavelengths. Because of its high sensitivity and robustness, characterization of biochemical samples and weak measurement of quantum systems are possible to foresee.
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Affiliation(s)
- Yujie Cai
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
| | - Yu Chen
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, China
| | - Konstantin Dorfman
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Center for Theoretical Physics and School of Sciences, Hainan University, Haikou 570228, China
- Himalayan Institute for Advanced Study, Unit of Gopinath Seva Foundation, MIG 38, Avas Vikas, Rishikesh, Uttarakhand 249201, India
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Xiaoning Xin
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
| | - Xiaoying Wang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
| | - Kun Huang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, China
| | - E Wu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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10
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Wang F, Zhu S, Chen W, Han J, Duan R, Wang C, Dai M, Sun F, Jin Y, Wang QJ. Multidimensional detection enabled by twisted black arsenic-phosphorus homojunctions. NATURE NANOTECHNOLOGY 2024; 19:455-462. [PMID: 38225358 DOI: 10.1038/s41565-023-01593-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 12/12/2023] [Indexed: 01/17/2024]
Abstract
A light field carrying multidimensional optical information, including but not limited to polarization, intensity and wavelength, is essential for numerous applications such as environmental monitoring, thermal imaging, medical diagnosis and free-space communications. Simultaneous acquisition of this multidimensional information could provide comprehensive insights for understanding complex environments but remains a challenge. Here we demonstrate a multidimensional optical information detection device based on zero-bias double twisted black arsenic-phosphorus homojunctions, where the photoresponse is dominated by the photothermoelectric effect. By using a bipolar and phase-offset polarization photoresponse, the device operated in the mid-infrared range can simultaneously detect both the polarization angle and incident intensity information through direct measurement of the photocurrents in the double twisted black arsenic-phosphorus homojunctions. The device's responsivity makes it possible to retrieve wavelength information, typically perceived as difficult to obtain. Moreover, the device exhibits an electrically tunable polarization photoresponse, enabling precise distinction of polarization angles under low-intensity light exposure. These demonstrations offer a promising approach for simultaneous detection of multidimensional optical information, indicating potential for diverse photonic applications.
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Affiliation(s)
- Fakun Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Song Zhu
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Wenduo Chen
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Jiayue Han
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Chongwu Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Mingjin Dai
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Fangyuan Sun
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Yuhao Jin
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Qi Jie Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
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11
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Choi M, Munley C, Fröch JE, Chen R, Majumdar A. Nonlocal, Flat-Band Meta-Optics for Monolithic, High-Efficiency, Compact Photodetectors. NANO LETTERS 2024; 24:3150-3156. [PMID: 38477059 DOI: 10.1021/acs.nanolett.3c05139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Miniaturized photodetectors are becoming increasingly sought-after components for next-generation technologies, such as autonomous vehicles, integrated wearable devices, or gadgets embedded on the Internet of Things. A major challenge, however, lies in shrinking the device footprint while maintaining high efficiency. This conundrum can be solved by realizing a nontrivial relation between the energy and momentum of photons, such as dispersion-free devices, known as flat bands. Here, we leverage flat-band meta-optics to simultaneously achieve critical absorption over a wide range of incidence angles. For a monolithic silicon meta-optical photodiode, we achieved an ∼10-fold enhancement in the photon-to-electron conversion efficiency. Such enhancement over a large angular range of ∼36° allows incoming light to be collected via a large-aperture lens and focused on a compact photodiode, potentially enabling high-speed and low-light operation. Our research unveils new possibilities for creating compact and efficient optoelectronic devices with far-reaching impact on various applications, including augmented reality and light detection and ranging.
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Affiliation(s)
- Minho Choi
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Christopher Munley
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Johannes E Fröch
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Rui Chen
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Arka Majumdar
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
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12
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Fortin-Deschênes M, Watanabe K, Taniguchi T, Xia F. Van der Waals epitaxy of tunable moirés enabled by alloying. NATURE MATERIALS 2024; 23:339-346. [PMID: 37580367 DOI: 10.1038/s41563-023-01596-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Accepted: 05/31/2023] [Indexed: 08/16/2023]
Abstract
The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies. However, twisted configurations are thermodynamically unfavourable, making accurate twist angle control during growth implausible. While rotationally aligned, lattice-mismatched moirés such as WSe2/WS2 can be synthesized, they lack the critical moiré period tunability, and their formation mechanisms are not well understood. Here, we report the thermodynamically driven van der Waals epitaxy of moirés with a tunable period from 10 to 45 nanometres, using lattice mismatch engineering in two WSSe layers with adjustable chalcogen ratios. Contrary to conventional epitaxy, where lattice-mismatch-induced stress hinders high-quality growth, we reveal the key role of bulk stress in moiré formation and its unique interplay with edge stress in shaping the moiré growth modes. Moreover, the superlattices display tunable interlayer excitons and moiré intralayer excitons. Our studies unveil the epitaxial science of moiré synthesis and lay the foundations for moiré-based technologies.
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Affiliation(s)
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, CT, USA.
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13
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Mehew JD, Merino RL, Ishizuka H, Block A, Mérida JD, Carlón AD, Watanabe K, Taniguchi T, Levitov LS, Efetov DK, Tielrooij KJ. Ultrafast Umklapp-assisted electron-phonon cooling in magic-angle twisted bilayer graphene. SCIENCE ADVANCES 2024; 10:eadj1361. [PMID: 38335282 PMCID: PMC10857426 DOI: 10.1126/sciadv.adj1361] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Accepted: 01/11/2024] [Indexed: 02/12/2024]
Abstract
Understanding electron-phonon interactions is fundamentally important and has crucial implications for device applications. However, in twisted bilayer graphene near the magic angle, this understanding is currently lacking. Here, we study electron-phonon coupling using time- and frequency-resolved photovoltage measurements as direct and complementary probes of phonon-mediated hot-electron cooling. We find a remarkable speedup in cooling of twisted bilayer graphene near the magic angle: The cooling time is a few picoseconds from room temperature down to 5 kelvin, whereas in pristine bilayer graphene, cooling to phonons becomes much slower for lower temperatures. Our experimental and theoretical analysis indicates that this ultrafast cooling is a combined effect of superlattice formation with low-energy moiré phonons, spatially compressed electronic Wannier orbitals, and a reduced superlattice Brillouin zone. This enables efficient electron-phonon Umklapp scattering that overcomes electron-phonon momentum mismatch. These results establish twist angle as an effective way to control energy relaxation and electronic heat flow.
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Affiliation(s)
- Jake Dudley Mehew
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, 08193 Bellaterra (Barcelona), Spain
| | - Rafael Luque Merino
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology (BIST), Castelldefels 08860, Spain
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Hiroaki Ishizuka
- Department of Physics, Tokyo Institute of Technology, Tokyo, Japan
| | - Alexander Block
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, 08193 Bellaterra (Barcelona), Spain
| | - Jaime Díez Mérida
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology (BIST), Castelldefels 08860, Spain
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Andrés Díez Carlón
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology (BIST), Castelldefels 08860, Spain
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Material Sciences, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Material Sciences, Tsukuba, Japan
| | - Leonid S. Levitov
- Department of Physics, Massachusetts Institute of Technology, Cambridge, 02139 MA, USA
| | - Dmitri K. Efetov
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, 08193 Bellaterra (Barcelona), Spain
- Department of Applied Physics, TU Eindhoven, Den Dolech 2, Eindhoven 5612 AZ, Netherlands
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14
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Xin W, Zhong W, Shi Y, Shi Y, Jing J, Xu T, Guo J, Liu W, Li Y, Liang Z, Xin X, Cheng J, Hu W, Xu H, Liu Y. Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306772. [PMID: 37661841 DOI: 10.1002/adma.202306772] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/22/2023] [Indexed: 09/05/2023]
Abstract
The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.
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Affiliation(s)
- Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yujie Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yimeng Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jiawei Jing
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Zhongzhu Liang
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jinluo Cheng
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
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15
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Dai X, Yu Y, Ye T, Deng J, Bu Y, Shi M, Wang R, Zhou J, Sun L, Chen X, Shen X. Dynamically Reconfigurable on-Chip Polarimeters Based on Nanoantenna Enabled Polarization Dependent Optoelectronic Computing. NANO LETTERS 2024; 24:983-992. [PMID: 38206182 DOI: 10.1021/acs.nanolett.3c04454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
On-chip polarization detectors have attracted extensive research interest due to their filterless and ultracompact architecture. However, their polarization-dependent photoresponses cannot be dynamically adjusted, hindering the development toward intelligence. Here, we propose dynamically reconfigurable polarimetry based on in-sensor differentiation of two self-powered photoresponses with orthogonal polarization dependences and tunable responsivities. Such a device can be electrostatically configured in an ultrahigh polarization extinction ratio (PER) mode, where the PER tends to infinity, a Stokes parameter direct sensing mode, where the photoresponse is proportional to S1 or S2 with high accuracy (RMSES1 = 1.5%, RMSES2 = 2.0%), or a background suppressing mode, where the target-background polarization contrast is singularly enhanced. Moreover, the device achieves a polarization angle sensitivity of 0.51 mA·W-1·degree-1 and a specific polarization angle detectivity of 2.8 × 105 cm·Hz1/2·W·degree-1. This scheme is demonstrated throughout the near-to-long-wavelength infrared range, and it will bring a leap for next-generation on-chip polarimeters.
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Affiliation(s)
- Xu Dai
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Yu Yu
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Tao Ye
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Jie Deng
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Yonghao Bu
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Mengdie Shi
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Ruowen Wang
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Jing Zhou
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Liaoxin Sun
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xuechu Shen
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
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16
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Uddin MG, Das S, Shafi AM, Wang L, Cui X, Nigmatulin F, Ahmed F, Liapis AC, Cai W, Yang Z, Lipsanen H, Hasan T, Yoon HH, Sun Z. Broadband miniaturized spectrometers with a van der Waals tunnel diode. Nat Commun 2024; 15:571. [PMID: 38233431 PMCID: PMC10794200 DOI: 10.1038/s41467-024-44702-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 01/02/2024] [Indexed: 01/19/2024] Open
Abstract
Miniaturized spectrometers are of immense interest for various on-chip and implantable photonic and optoelectronic applications. State-of-the-art conventional spectrometer designs rely heavily on bulky dispersive components (such as gratings, photodetector arrays, and interferometric optics) to capture different input spectral components that increase their integration complexity. Here, we report a high-performance broadband spectrometer based on a simple and compact van der Waals heterostructure diode, leveraging a careful selection of active van der Waals materials- molybdenum disulfide and black phosphorus, their electrically tunable photoresponse, and advanced computational algorithms for spectral reconstruction. We achieve remarkably high peak wavelength accuracy of ~2 nanometers, and broad operation bandwidth spanning from ~500 to 1600 nanometers in a device with a ~ 30×20 μm2 footprint. This diode-based spectrometer scheme with broadband operation offers an attractive pathway for various applications, such as sensing, surveillance and spectral imaging.
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Affiliation(s)
- Md Gius Uddin
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland
| | - Susobhan Das
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Abde Mayeen Shafi
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Lei Wang
- Key Lab of Education Ministry for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaoqi Cui
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland
| | - Fedor Nigmatulin
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland
| | - Faisal Ahmed
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Andreas C Liapis
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland
| | - Weiwei Cai
- Key Lab of Education Ministry for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zongyin Yang
- College of Information Science and Electronic Engineering and State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China
| | - Harri Lipsanen
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Tawfique Hasan
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Hoon Hahn Yoon
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- Department of Semiconductor Engineering, School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland.
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland.
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17
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Zhou Y, Zhou X, Yu XL, Liang Z, Zhao X, Wang T, Miao J, Chen X. Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries. Nat Commun 2024; 15:501. [PMID: 38218730 PMCID: PMC10787835 DOI: 10.1038/s41467-024-44792-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 01/04/2024] [Indexed: 01/15/2024] Open
Abstract
The photovoltaic effect lies at the heart of eco-friendly energy harvesting. However, the conversion efficiency of traditional photovoltaic effect utilizing the built-in electric effect in p-n junctions is restricted by the Shockley-Queisser limit. Alternatively, intrinsic/bulk photovoltaic effect (IPVE/BPVE), a second-order nonlinear optoelectronic effect arising from the broken inversion symmetry of crystalline structure, can overcome this theoretical limit. Here, we uncover giant and robust IPVE in one-dimensional (1D) van der Waals (vdW) grain boundaries (GBs) in a layered semiconductor, ReS2. The IPVE-induced photocurrent densities in vdW GBs are among the highest reported values compared with all kinds of material platforms. Furthermore, the IPVE-induced photocurrent is gate-tunable with a polarization-independent component along the GBs, which is preferred for energy harvesting. The observed IPVE in vdW GBs demonstrates a promising mechanism for emerging optoelectronics applications.
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Affiliation(s)
- Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
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18
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Liu M, Wei J, Qi L, An J, Liu X, Li Y, Shi Z, Li D, Novoselov KS, Qiu CW, Li S. Photogating-assisted tunneling boosts the responsivity and speed of heterogeneous WSe 2/Ta 2NiSe 5 photodetectors. Nat Commun 2024; 15:141. [PMID: 38167874 PMCID: PMC10762006 DOI: 10.1038/s41467-023-44482-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024] Open
Abstract
Photogating effect is the dominant mechanism of most high-responsivity two-dimensional (2D) material photodetectors. However, the ultrahigh responsivities in those devices are intrinsically at the cost of very slow response speed. In this work, we report a WSe2/Ta2NiSe5 heterostructure detector whose photodetection gain and response speed can be enhanced simultaneously, overcoming the trade-off between responsivity and speed. We reveal that photogating-assisted tunneling synergistically allows photocarrier multiplication and carrier acceleration through tunneling under an electrical field. The photogating effect in our device features low-power consumption (in the order of nW) and shows a dependence on the polarization states of incident light, which can be further tuned by source-drain voltages, allowing for wavelength discrimination with just a two-electrode planar structure. Our findings offer more opportunities for the long-sought next-generation photodetectors with high responsivity, fast speed, polarization detection, and multi-color sensing, simultaneously.
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Affiliation(s)
- Mingxiu Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Jingxuan Wei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 611731, Chengdu, PR China
| | - Liujian Qi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Junru An
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Xingsi Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Yahui Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China.
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China.
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
| | - Shaojuan Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, 130033, Changchun, PR China.
- University of Chinese Academy of Sciences (UCAS), 100049, Beijing, PR China.
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19
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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20
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Yang MM, Zhu TY, Renz AB, Sun HM, Liu S, Gammon PM, Alexe M. Auxetic piezoelectric effect in heterostructures. NATURE MATERIALS 2024; 23:95-100. [PMID: 38036625 PMCID: PMC10769876 DOI: 10.1038/s41563-023-01736-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Accepted: 10/23/2023] [Indexed: 12/02/2023]
Abstract
Inherent symmetry breaking at the interface has been fundamental to a myriad of physical effects and functionalities, such as efficient spin-charge interconversion, exotic magnetic structures and an emergent bulk photovoltaic effect. It has recently been demonstrated that interface asymmetry can induce sizable piezoelectric effects in heterostructures, even those consisting of centrosymmetric semiconductors, which provides flexibility to develop and optimize electromechanical coupling phenomena. Here, by targeted engineering of the interface symmetry, we achieve piezoelectric phenomena behaving as the electrical analogue of the negative Poisson's ratio. This effect, termed the auxetic piezoelectric effect, exhibits the same sign for the longitudinal (d33) and transverse (d31, d32) piezoelectric coefficients, enabling a simultaneous contraction or expansion in all directions under an external electrical stimulus. The signs of the transverse coefficients can be further tuned via in-plane symmetry anisotropy. The effects exist in a wide range of material systems and exhibit substantial coefficients, indicating potential implications for all-semiconductor actuator, sensor and filter applications.
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Affiliation(s)
- Ming-Min Yang
- Department of Physics, The University of Warwick, Coventry, UK.
- Hefei National Laboratory, Hefei, China.
- School of Emerging Technology, The University of Science and Technology of China, Hefei, China.
| | - Tian-Yuan Zhu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science and Research Center for Industries of the Future, Westlake University, Hangzhou, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, China
| | | | - He-Meng Sun
- Hefei National Laboratory, Hefei, China
- School of Emerging Technology, The University of Science and Technology of China, Hefei, China
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science and Research Center for Industries of the Future, Westlake University, Hangzhou, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, China
| | | | - Marin Alexe
- Department of Physics, The University of Warwick, Coventry, UK.
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21
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Hu C, Naik MH, Chan YH, Ruan J, Louie SG. Light-induced shift current vortex crystals in moiré heterobilayers. Proc Natl Acad Sci U S A 2023; 120:e2314775120. [PMID: 38085781 PMCID: PMC10741382 DOI: 10.1073/pnas.2314775120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Accepted: 11/07/2023] [Indexed: 12/24/2023] Open
Abstract
Transition metal dichalcogenide (TMD) moiré superlattices provide an emerging platform to explore various light-induced phenomena. Recently, the discoveries of novel moiré excitons have attracted great interest. The nonlinear optical responses of these systems are however still underexplored. Here, we report investigation of light-induced shift currents (a second-order response generating DC current from optical illumination) in the WSe2/WS2 moiré superlattice. We identify a striking phenomenon of the formation of shift current vortex crystals-i.e., two-dimensional periodic arrays of moiré-scale current vortices and associated magnetic fields with remarkable intensity under laboratory laser setup. Furthermore, we demonstrate high optical tunability of these current vortices-their location, shape, chirality, and magnitude can be tuned by the frequency, polarization, and intensity of the incident light. Electron-hole interactions (excitonic effects) are found to play a crucial role in the generation and nature of the shift current intensity and distribution. Our findings provide a promising all-optical control route to manipulate nanoscale shift current density distributions and magnetic field patterns, as well as shed light on nonlinear optical responses in moiré quantum matter and their possible applications.
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Affiliation(s)
- Chen Hu
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| | - Mit H. Naik
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| | - Yang-Hao Chan
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
- Institute of Atomic and Molecular Sciences, Academia Sinica, and Physics Division, National Center for Theoretical Sciences, Taipei10617, Taiwan
| | - Jiawei Ruan
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| | - Steven G. Louie
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
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22
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Zhou H, Ren Z, Li D, Xu C, Mu X, Lee C. Dynamic construction of refractive index-dependent vibrations using surface plasmon-phonon polaritons. Nat Commun 2023; 14:7316. [PMID: 37952033 PMCID: PMC10640644 DOI: 10.1038/s41467-023-43127-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 11/01/2023] [Indexed: 11/14/2023] Open
Abstract
One of the fundamental hurdles in infrared spectroscopy is the failure of molecular identification when their infrared vibrational fingerprints overlap. Refractive index (RI) is another intrinsic property of molecules associated with electronic polarizability, but with limited contribution to molecular identification in mixed environments currently. Here, we investigate the coupling mode of localized surface plasmon and surface phonon polaritons for vibrational de-overlapping. The coupling mode is sensitive to the molecular refractive index, attributed to the RI-induced vibrational variations of surface phonon polaritons (SPhP) within the Reststrahlen band, referred to as RI-dependent SPhP vibrations. The RI-dependent SPhP vibrations are linked to molecular RI features. According to the deep-learning-augmented demonstration of bond-breaking-bond-making dynamic profiling in biological reaction, we substantiate that the RI-dependent SPhP vibrations effectively disentangle overlapping vibrational modes, achieving a 92% identification accuracy even for the strongly overlapping vibrational modes in the reaction. Our findings offer insights into the realm of light-matter interaction and provide a valuable toolkit for biomedicine applications.
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Affiliation(s)
- Hong Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117583, Singapore
| | - Zhihao Ren
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117583, Singapore
| | - Dongxiao Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117583, Singapore
| | - Cheng Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117583, Singapore
| | - Xiaojing Mu
- Key Laboratory of Optoelectronic Technology & Systems of Ministry of Education, International R&D Center of Micro-Nano Systems and New Materials Technology, Chongqing University, Chongqing, 400044, P. R. China.
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117583, Singapore.
- NUS Suzhou Research Institute (NUSRI), Suzhou, Jiangsu, 215123, China.
- NUS Graduate School-Integrative Sciences and Engineering Programme (ISEP), National University of Singapore, Singapore, 119077, Singapore.
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23
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Pan X, Shi J, Wang P, Wang S, Pan C, Yu W, Cheng B, Liang SJ, Miao F. Parallel perception of visual motion using light-tunable memory matrix. SCIENCE ADVANCES 2023; 9:eadi4083. [PMID: 37774015 PMCID: PMC10541003 DOI: 10.1126/sciadv.adi4083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Accepted: 08/29/2023] [Indexed: 10/01/2023]
Abstract
Parallel perception of visual motion is of crucial significance to the development of an intelligent machine vision system. However, implementing in-sensor parallel visual motion perception using conventional complementary metal-oxide semiconductor technology is challenging, because the temporal and spatial information embedded in motion cannot be simultaneously encoded and perceived at the sensory level. Here, we demonstrate the parallel perception of diverse motion modes at the sensor level by exploiting light-tunable memory matrix in a van der Waals (vdW) heterostructure array. The optoelectronic characteristics of gate-tunable photoconductivity and light-tunable memory matrix enable devices in the array to realize simultaneous encoding and processing of incoming spatiotemporal light pattern. Furthermore, we implement a visual motion perceptron with the array capable of deciphering multiple motion parameters in parallel, including direction, velocity, acceleration, and angular velocity. Our work opens up a promising venue for the realization of an intelligent machine vision system based on in-sensor motion perception.
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Affiliation(s)
- Xuan Pan
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jingwen Shi
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Pengfei Wang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Shuang Wang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Chen Pan
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Wentao Yu
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shi-Jun Liang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Feng Miao
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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24
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Mayes D, Farahmand F, Grossnickle M, Lohmann M, Aldosary M, Li J, Aji V, Shi J, Song JCW, Gabor NM. Mapping the intrinsic photocurrent streamlines through micromagnetic heterostructure devices. Proc Natl Acad Sci U S A 2023; 120:e2221815120. [PMID: 37722037 PMCID: PMC10523491 DOI: 10.1073/pnas.2221815120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 08/08/2023] [Indexed: 09/20/2023] Open
Abstract
Photocurrent in quantum materials is often collected at global contacts far away from the initial photoexcitation. This collection process is highly nonlocal. It involves an intricate spatial pattern of photocurrent flow (streamlines) away from its primary photoexcitation that depends sensitively on the configuration of current collecting contacts as well as the spatial nonuniformity and tensor structure of conductivity. Direct imaging to track photocurrent streamlines is challenging. Here, we demonstrate a microscopy method to image photocurrent streamlines through ultrathin heterostructure devices comprising platinum on yttrium iron garnet (YIG). We accomplish this by combining scanning photovoltage microscopy with a uniform rotating magnetic field. Here, local photocurrent is generated through a photo-Nernst type effect with its direction controlled by the external magnetic field. This enables the mapping of photocurrent streamlines in a variety of geometries that include conventional Hall bar-type devices, but also unconventional wing-shaped devices called electrofoils. In these, we find that photocurrent streamlines display contortion, compression, and expansion behavior depending on the shape and angle of attack of the electrofoil devices, much in the same way as tracers in a wind tunnel map the flow of air around an aerodynamic airfoil. This affords a powerful tool to visualize and characterize charge flow in optoelectronic devices.
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Affiliation(s)
- David Mayes
- Department of Physics and Astronomy, University of California, Riverside, CA92521
- Laboratory of Quantum Materials Optoelectronics, University of California, Riverside, CA92521
| | - Farima Farahmand
- Department of Physics and Astronomy, University of California, Riverside, CA92521
- Laboratory of Quantum Materials Optoelectronics, University of California, Riverside, CA92521
| | - Maxwell Grossnickle
- Department of Physics and Astronomy, University of California, Riverside, CA92521
- Laboratory of Quantum Materials Optoelectronics, University of California, Riverside, CA92521
| | - Mark Lohmann
- Department of Physics and Astronomy, University of California, Riverside, CA92521
| | - Mohammed Aldosary
- Department of Physics and Astronomy, University of California, Riverside, CA92521
| | - Junxue Li
- Department of Physics and Astronomy, University of California, Riverside, CA92521
| | - Vivek Aji
- Department of Physics and Astronomy, University of California, Riverside, CA92521
| | - Jing Shi
- Department of Physics and Astronomy, University of California, Riverside, CA92521
| | - Justin C. W. Song
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Nathaniel M. Gabor
- Department of Physics and Astronomy, University of California, Riverside, CA92521
- Laboratory of Quantum Materials Optoelectronics, University of California, Riverside, CA92521
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25
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Wang SY, Li DK, Zha MJ, Yan XQ, Liu Z, Tian J. Tunable Optical Activity in Twisted Anisotropic Two-Dimensional Materials. ACS NANO 2023; 17:16230-16238. [PMID: 37530588 DOI: 10.1021/acsnano.3c06031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Twisted van der Waals structures exhibit a variety of unusual electrical and optical phenomena and could provide a powerful means for designing nanodevices with tunable chiral properties. However, programming intrinsic chiral properties of the film on the atomic scale remains a great challenge due to the limitations of fabrication and measurement techniques. Here, we report a highly tunable large optical activity of twisted anisotropic two-dimensional (2D) materials, including black phosphorus (BP), ReS2, PdSe2, and α-MoO3, by varying the twist angle between the stacked layers. The chirality can be deliberately tailored through the engineering of the symmetry, band structure, and anisotropy of 2D materials, demonstrating the high tunability of the chirality. The results show the highest thickness-normalized ellipticity value (13.8 deg μm-1, twisted ReS2) and ellipticity value (1581 mdeg, twisted BP) among the systems based on 2D materials. It is also shown that the chiroptical response exists in an extremely large spectral range from the visible to the infrared. Furthermore, the twisted ReS2 enabled spin-selective control of the information transformation. These results show that highly controllable chirality in twisted 2D anisotropic materials has considerable potential in on-chip polarization optics, nano-optoelectronics, and biology.
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Affiliation(s)
- Su-Yun Wang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - De-Kang Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Ming-Jie Zha
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Xiao-Qing Yan
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Zhibo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Jianguo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
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26
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Seifert P, Kastl C. The sum of symmetries is lower than its parts. NATURE NANOTECHNOLOGY 2023; 18:844-845. [PMID: 37443253 DOI: 10.1038/s41565-023-01427-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2023]
Affiliation(s)
- Paul Seifert
- Institute of Physics, Faculty of Electrical Engineering and Information Technology (EIT), University of the Bundeswehr Munich, Neubiberg, Germany.
| | - Christoph Kastl
- Walter-Schottky-Institute and Physik-Department, School of Natural Sciences, Technical University of Munich, Garching, Germany.
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27
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Liang Z, Zhou X, Zhang L, Yu XL, Lv Y, Song X, Zhou Y, Wang H, Wang S, Wang T, Shum PP, He Q, Liu Y, Zhu C, Wang L, Chen X. Strong bulk photovoltaic effect in engineered edge-embedded van der Waals structures. Nat Commun 2023; 14:4230. [PMID: 37454221 DOI: 10.1038/s41467-023-39995-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 07/07/2023] [Indexed: 07/18/2023] Open
Abstract
Bulk photovoltaic effect (BPVE), a second-order nonlinear optical effect governed by the quantum geometric properties of materials, offers a promising approach to overcome the Shockley-Quiesser limit of traditional photovoltaic effect and further improve the efficiency of energy harvesting. Here, we propose an effective platform, the nano edges embedded in assembled van der Waals (vdW) homo- or hetero-structures with strong symmetry breaking, low dimensionality and abundant species, for BPVE investigations. The BPVE-induced photocurrents strongly depend on the orientation of edge-embedded structures and polarization of incident light. Reversed photocurrent polarity can be observed at left and right edge-embedded structures. Our work not only visualizes the unique optoelectronic effect in vdW nano edges, but also provides an effective strategy for achieving BPVE in engineered vdW structures.
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Affiliation(s)
- Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China.
- International Quantum Academy, Shenzhen, China.
| | - Yan Lv
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Han Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Shuo Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Perry Ping Shum
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Yanjun Liu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
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28
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Dai M, Wang C, Qiang B, Jin Y, Ye M, Wang F, Sun F, Zhang X, Luo Y, Wang QJ. Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity. Nat Commun 2023; 14:3421. [PMID: 37296149 DOI: 10.1038/s41467-023-39071-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 05/22/2023] [Indexed: 06/12/2023] Open
Abstract
Filter-free miniaturized polarization-sensitive photodetectors have important applications in the next-generation on-chip polarimeters. However, their polarization sensitivity is thus far limited by the intrinsic low diattenuation and inefficient photon-to-electron conversion. Here, we implement experimentally a miniaturized detector based on one-dimensional tellurium nanoribbon, which can significantly improve the photothermoelectric responses by translating the polarization-sensitive absorption into a large temperature gradient together with the finite-size effect of a perfect plasmonic absorber. Our devices exhibit a zero-bias responsivity of 410 V/W and an ultrahigh polarization ratio (2.5 × 104), as well as a peak polarization angle sensitivity of 7.10 V/W•degree, which is one order of magnitude higher than those reported in the literature. Full linear polarimetry detection is also achieved with the proposed device in a simple geometrical configuration. Polarization-coded communication and optical strain measurement are demonstrated showing the great potential of the proposed devices. Our work presents a feasible solution for miniaturized room-temperature infrared photodetectors with ultrahigh polarization sensitivity.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Qiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xuran Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yu Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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29
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Wang L, Yin S, Yang J, Dou SX. Moiré Superlattice Structure in Two-Dimensional Catalysts: Synthesis, Property and Activity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300165. [PMID: 36974572 DOI: 10.1002/smll.202300165] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Revised: 03/02/2023] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) layered materials have been widely used as catalysts due to their high specific surface area, large fraction of uncoordinated surface atoms, and high charge carrier mobility. Moiré superlattice emerges in 2D layered materials with twist angle or lattice mismatch. By manipulating the moiré superlattice structure, 2D layered materials present modulated electronic band structure, topological edge states, and unconventional superconductivity which are tightly associated with the performance of catalysts. Hence, engineering moiré superlattice structures are proposed to be an important technology in modifying 2D layered materials for improved catalytic properties. However, currently, the investigation of moiré superlattice structure in a catalytic application is still in its infancy. This perspective starts with the discussion of structural features and fabrication strategy of 2D materials with moiré superlattice structure. Afterward, the catalytic applications, including electrocatalytic and photocatalytic applications, are summarized. In particular, the promotion mechanism of the catalytic performance caused by the moiré superlattice structure is proposed. Finally, the perspective is concluded by outlining the remaining challenges and possible solutions for the future development of 2D materials with moiré superlattice structure towards the catalytic applications.
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Affiliation(s)
- Li Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Sisi Yin
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Jianping Yang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Shi Xue Dou
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Wollongong, NSW, 2500, Australia
- Institute of Energy Materials Science, University of Shanghai for Science and Technology, Shanghai, 200093, China
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30
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Yuan S, Ma C, Fetaya E, Mueller T, Naveh D, Zhang F, Xia F. Geometric deep optical sensing. Science 2023; 379:eade1220. [PMID: 36927029 DOI: 10.1126/science.ade1220] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/18/2023]
Abstract
Geometry, an ancient yet vibrant branch of mathematics, has important and far-reaching impacts on various disciplines such as art, science, and engineering. Here, we introduce an emerging concept dubbed "geometric deep optical sensing" that is based on a number of recent demonstrations in advanced optical sensing and imaging, in which a reconfigurable sensor (or an array thereof) can directly decipher the rich information of an unknown incident light beam, including its intensity, spectrum, polarization, spatial features, and possibly angular momentum. We present the physical, mathematical, and engineering foundations of this concept, with particular emphases on the roles of classical and quantum geometry and deep neural networks. Furthermore, we discuss the new opportunities that this emerging scheme can enable and the challenges associated with future developments.
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Affiliation(s)
- Shaofan Yuan
- Department of Electrical Engineering, Yale University, New Haven, CT, USA
| | - Chao Ma
- Department of Electrical Engineering, Yale University, New Haven, CT, USA
| | - Ethan Fetaya
- Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel
| | - Thomas Mueller
- Institute of Photonics, Vienna University of Technology, Vienna, Austria
| | - Doron Naveh
- Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, Richardson, TX, USA.,Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, CT, USA
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31
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Xing F, Ji G, Li Z, Zhong W, Wang F, Liu Z, Xin W, Tian J. Preparation, properties and applications of two-dimensional superlattices. MATERIALS HORIZONS 2023; 10:722-744. [PMID: 36562255 DOI: 10.1039/d2mh01206e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.
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Affiliation(s)
- Fei Xing
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Guangmin Ji
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Zongwen Li
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Feiyue Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zhibo Liu
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Jianguo Tian
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
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32
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Zhou J, Zhang Z, Dong B, Ren Z, Liu W, Lee C. Midinfrared Spectroscopic Analysis of Aqueous Mixtures Using Artificial-Intelligence-Enhanced Metamaterial Waveguide Sensing Platform. ACS NANO 2023; 17:711-724. [PMID: 36576121 DOI: 10.1021/acsnano.2c10163] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As miniaturized solutions, mid-infrared (MIR) waveguide sensors are promising for label-free compositional detection of mixtures leveraging plentiful absorption fingerprints. However, the quantitative analysis of liquid mixtures is still challenging using MIR waveguide sensors, as the absorption spectrum overlaps for multiple organic components accompanied by strong water absorption background. Here, we present an artificial-intelligence-enhanced metamaterial waveguide sensing platform (AIMWSP) for aqueous mixture analysis in the MIR. With the sensitivity-improved metamaterial waveguide and assistance of machine learning, the MIR absorption spectra of a ternary mixture in water can be successfully distinguished and decomposed to single-component spectra for predicting concentration. A classification accuracy of 98.88% for 64 mixing ratios and 92.86% for four concentrations below the limit of detection (972 ppm, based on 3σ) with steps of 300 ppm are realized. Besides, the mixture concentration prediction with root-mean-squared error varying from 0.107 vol % to 1.436 vol % is also achieved. Our work indicates the potential of further extending this sensing platform to MIR spectrometer-on-chip aiming for the data analytics of multiple organic components in aqueous environments.
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Affiliation(s)
- Jingkai Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Zixuan Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Zhihao Ren
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Weixin Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
- NUS Graduate School - Integrative Sciences and Engineering Programme (ISEP), National University of Singapore, Singapore, Singapore119077
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33
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Han Z, Wang F, Sun J, Wang X, Tang Z. Recent Advances in Ultrathin Chiral Metasurfaces by Twisted Stacking. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206141. [PMID: 36284479 DOI: 10.1002/adma.202206141] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Revised: 09/22/2022] [Indexed: 06/16/2023]
Abstract
Artificial chiral nanostructures have been subjected to extensive research for their unique chiroptical activities. Planarized chiral films of ultrathin thicknesses are in particular demand for easy on-chip integration and improved energy efficiency as polarization-sensitive metadevices. Recently, controlled twisted stacking of two or more layers of nanomaterials, such as 2D van der Waals materials, ultrathin films, or traditional metasurfaces, at an angle has emerged as a general strategy to introduce optical chirality into achiral solid-state systems. This method endows new degrees of freedom, e.g., the interlayer twist angle, to flexibly engineer and tune the chiroptical responses without having to change the material or the design, thus greatly facilitating the development of multifunctional metamaterials. In this review, recent exciting progress in planar chiral metasurfaces are summarized and discussed from the viewpoints of building blocks, fabrication methods, as well as circular dichroism and modulation thereof in twisted stacked nanostructures. The review further highlights the ever-growing portfolio of applications of these chiral metasurfaces, including polarization conversion, information encryption, chiral sensing, and as an engineering platform for hybrid metadevices. Finally, forward-looking prospects are provided.
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Affiliation(s)
- Zexiang Han
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Fei Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Juehan Sun
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Xiaoli Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhiyong Tang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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34
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Shen J, Zhu T, Zhou J, Chu Z, Ren X, Deng J, Dai X, Li F, Wang B, Chen X, Lu W. High-Discrimination Circular Polarization Detection Based on Dielectric-Metal-Hybrid Chiral Metamirror Integrated Quantum Well Infrared Photodetectors. SENSORS (BASEL, SWITZERLAND) 2022; 23:168. [PMID: 36616770 PMCID: PMC9823415 DOI: 10.3390/s23010168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 12/20/2022] [Accepted: 12/22/2022] [Indexed: 06/17/2023]
Abstract
Circular polarization detection enables a wide range of applications. With the miniaturization of optoelectronic systems, integrated circular polarization detectors with native sensitivity to the spin state of light have become highly sought after. The key issues with this type of device are its low circular polarization extinction ratios (CPERs) and reduced responsivities. Metallic two-dimensional chiral metamaterials have been integrated with detection materials for filterless circular polarization detection. However, the CPERs of such devices are typically below five, and the light absorption in the detection materials is hardly enhanced and is even sometimes reduced. Here, we propose to sandwich multiple quantum wells between a dielectric two-dimensional chiral metamaterial and a metal grating to obtain both a high CPER and a photoresponse enhancement. The dielectric-metal-hybrid chiral metamirror integrated quantum well infrared photodetector (QWIP) exhibits a CPER as high as 100 in the long wave infrared range, exceeding all reported CPERs for integrated circular polarization detectors. The absorption efficiency of this device reaches 54%, which is 17 times higher than that of a standard 45° edge facet coupled device. The circular polarization discrimination is attributed to the interference between the principle-polarization radiation and the cross-polarization radiation of the chiral structure during multiple reflections and the structure-material double polarization selection. The enhanced absorption efficiency is due to the excitation of a surface plasmon polariton wave. The dielectric-metal-hybrid chiral mirror structure is compatible with QWIP focal plane arrays.
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Affiliation(s)
- Jinyong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Tianyun Zhu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zeshi Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiansong Ren
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jie Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xu Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fangzhe Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Bo Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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35
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Zhang C, Guo P, Zhou J. Tailoring Bulk Photovoltaic Effects in Magnetic Sliding Ferroelectric Materials. NANO LETTERS 2022; 22:9297-9305. [PMID: 36441961 DOI: 10.1021/acs.nanolett.2c02802] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The bulk photovoltaic effect that is intimately associated with crystalline symmetry has been extensively studied in various nonmagnetic materials, especially ferroelectrics with a switchable electric polarization. In order to further engineer the symmetry, one could resort to spin-polarized systems possessing an extra magnetic degree of freedom. Here, we investigate the bulk photovoltaic effect in two-dimensional magnetic sliding ferroelectric (MSFE) systems, illustrated in VSe2, FeCl2, and CrI3 bilayers. The transition metal elements in these systems exhibit intrinsic spin polarization, and the stacking mismatch between the two layers produces a finite out-of-plane electric dipole. Through symmetry analyses and first-principles calculations, we show that photoinduced in-plane bulk photovoltaic current can be effectively tuned by their magnetic order and the out-of-plane dipole moment. The underlying mechanism is elucidated from the quantum metric dipole distribution in the reciprocal space. The ease of the fabrication and manipulation of MSFEs guarantee practical optoelectronic applications.
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Affiliation(s)
- Chunmei Zhang
- School of Physics, Northwest University, Xi'an710069, China
| | - Ping Guo
- School of Physics, Northwest University, Xi'an710069, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an710049, China
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36
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Zhou H, Ren Z, Xu C, Xu L, Lee C. MOF/Polymer-Integrated Multi-Hotspot Mid-Infrared Nanoantennas for Sensitive Detection of CO 2 Gas. NANO-MICRO LETTERS 2022; 14:207. [PMID: 36271989 PMCID: PMC9588146 DOI: 10.1007/s40820-022-00950-1] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Accepted: 09/09/2022] [Indexed: 05/20/2023]
Abstract
Metal-organic frameworks (MOFs) have been extensively used for gas sorption, storage and separation owing to ultrahigh porosity, exceptional thermal stability, and wide structural diversity. However, when it comes to ultra-low concentration gas detection, technical bottlenecks of MOFs appear due to the poor adsorption capacity at ppm-/ppb-level concentration and the limited sensitivity for signal transduction. Here, we present hybrid MOF-polymer physi-chemisorption mechanisms integrated with infrared (IR) nanoantennas for highly selective and ultrasensitive CO2 detection. To improve the adsorption capacity for trace amounts of gas molecules, MOFs are decorated with amino groups to introduce the chemisorption while maintaining the structural integrity for physisorption. Additionally, leveraging all major optimization methods, a multi-hotspot strategy is proposed to improve the sensitivity of nanoantennas by enhancing the near field and engineering the radiative and absorptive loss. As a benefit, we demonstrate the competitive advantages of our strategy against the state-of-the-art miniaturized IR CO2 sensors, including low detection limit, high sensitivity (0.18%/ppm), excellent reversibility (variation within 2%), and high selectivity (against C2H5OH, CH3OH, N2). This work provides valuable insights into the integration of advanced porous materials and nanophotonic devices, which can be further adopted in ultra-low concentration gas monitoring in industry and environmental applications.
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Affiliation(s)
- Hong Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
| | - Zhihao Ren
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
| | - Cheng Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
| | - Liangge Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore.
- NUS Suzhou Research Institute (NUSRI), Suzhou, 215123, People's Republic of China.
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37
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Zhang X, Yao Y, Liang L, Niu X, Wu J, Luo J. Self-Assembly of 2D Hybrid Double Perovskites on 3D Cs 2 AgBiBr 6 Crystals towards Ultrasensitive Detection of Weak Polarized Light. Angew Chem Int Ed Engl 2022; 61:e202205939. [PMID: 35654743 DOI: 10.1002/anie.202205939] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2022] [Indexed: 12/22/2022]
Abstract
We report the self-assembly of 2D double perovskite (BLA)2 CsAgBiBr7 (BLA=benzylammonium) on 3D Cs2 AgBiBr6 crystals, providing the first demonstration of polarization-sensitive photodetection using lead-free double perovskite heterocrystals (HCs). The (BLA)2 CsAgBiBr7 /Cs2 AgBiBr6 HC successfully combines the anisotropy of 2D double perovskites with the well-defined interface provided by heterogeneous integration. Driven by the built-in electric field in junction, photodetectors of HCs exhibit unique polarization dependence of zero-bias photocurrent with a large anisotropy ratio up to 9, which is 6 times amplified as compared to the pristine 2D (BLA)2 CsAgBiBr7 . More importantly, the present devices can remain polarization-sensitive with incident light intensity down to the nW cm-2 level. Our study on lead-free hybrid perovskite HCs marks a step toward establishing robust material foundations for fundamental scientific investigations and the development of optoelectronic devices.
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Affiliation(s)
- Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunpeng Yao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Lishan Liang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Xinyi Niu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Jianbo Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.,School of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, 330022, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
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38
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Zhang X, Yao Y, Liang L, Niu X, Wu J, Luo J. Self‐Assembly of 2D Hybrid Double Perovskites on 3D Cs2AgBiBr6 Crystals towards Ultrasensitive Detection of Weak Polarized Light. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202205939] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Xinyuan Zhang
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Yunpeng Yao
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Lishan Liang
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Xinyi Niu
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Jianbo Wu
- Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter chemistry CHINA
| | - Junhua Luo
- Chinese Academy of Sciences Crystalline Materials Yangqiao West Rd #155 350002 Fuzhou CHINA
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39
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A detector that can learn the fingerprint of light. Nature 2022; 604:252-253. [PMID: 35418627 DOI: 10.1038/d41586-022-00973-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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