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Mandal A, Khuntia SK, Mondal D, Mahadevan P, Bhattacharyya S. Spin Texture Sensitive Photodetection by Dion-Jacobson Tin Halide Perovskites. J Am Chem Soc 2023. [PMID: 37906676 DOI: 10.1021/jacs.3c10195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
The organic spacer molecule is known to regulate the optoelectronic properties of two-dimensional (2D) perovskites. We show that the spacer layer thickness determines the nature of optical transitions, direct or indirect, by controlling the structural properties of the inorganic layer. The spin-orbit interactions lead to different electron spin orientations for the states associated with the conduction band minimum (CBM) and the valence band maximum (VBM). This leads to a direct as well as an indirect component of the transitions, despite them being direct in momentum space. The shorter chains have a larger direct component, leading to a better optoelectronic performance. The mixed halide Sn2+ Dion-Jacobson (DJ) perovskite with the shortest 4-C diammonium spacer outshines the photodetection parameters of those having longer (6-C and 8-C) spacers and the corresponding Ruddlesden-Popper (RP) phases. The DJ system with a 4-C spacer and equimolar Br/I embodies an unprecedentedly high responsivity of 78.1 A W-1 under 3 V potential bias at 485 nm wavelength, among the DJ perovskites. Without any potential bias, this phase manifests the self-powered photodetection parameters of 0.085 A W-1 and 9.9 × 1010 jones. The unusual role of electron spin texture in these high-performance photodetectors of the lead-free DJ perovskites provides an avenue to exploit the information coded in spins for semiconductor devices without any ferromagnetic supplement or magnetic field.
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Affiliation(s)
- Arnab Mandal
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India
| | - Sanuja Kumar Khuntia
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Debayan Mondal
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Priya Mahadevan
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Sayan Bhattacharyya
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India
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2
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Ermolaev GA, Vyslanko IS, Tselin AP, El-Sayed MA, Tatmyshevskiy MK, Slavich AS, Yakubovsky DI, Mironov MS, Mazitov AB, Eghbali A, Panova DA, Romanov RI, Markeev AM, Kruglov IA, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Broadband Optical Properties of Bi 2Se 3. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091460. [PMID: 37177004 PMCID: PMC10180482 DOI: 10.3390/nano13091460] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Revised: 04/18/2023] [Accepted: 04/21/2023] [Indexed: 05/15/2023]
Abstract
Materials with high optical constants are of paramount importance for efficient light manipulation in nanophotonics applications. Recent advances in materials science have revealed that van der Waals (vdW) materials have large optical responses owing to strong in-plane covalent bonding and weak out-of-plane vdW interactions. However, the optical constants of vdW materials depend on numerous factors, e.g., synthesis and transfer method. Here, we demonstrate that in a broad spectral range (290-3300 nm) the refractive index n and the extinction coefficient k of Bi2Se3 are almost independent of synthesis technology, with only a ~10% difference in n and k between synthesis approaches, unlike other vdW materials, such as MoS2, which has a ~60% difference between synthesis approaches. As a practical demonstration, we showed, using the examples of biosensors and therapeutic nanoparticles, that this slight difference in optical constants results in reproducible efficiency in Bi2Se3-based photonic devices.
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Affiliation(s)
- Georgy A Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Ivan S Vyslanko
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey P Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Photonics and Quantum Materials Department, Skolkovo Institute of Science and Technology, 3 Nobel Str., Moscow 143026, Russia
| | - Marwa A El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Mikhail K Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksandr S Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Dmitry I Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Mikhail S Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Arslan B Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Amir Eghbali
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Daria A Panova
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Roman I Romanov
- Department of Solid State Physics and Nanosystems, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31 Kashirskoe Sh., Moscow 115409, Russia
| | - Andrey M Markeev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Ivan A Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Center of Fundamental and Applied Research, Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya Str., Moscow 127055, Russia
| | - Sergey M Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey A Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksey V Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, 1 Alek Manukyan Str., Yerevan 0025, Armenia
| | - Valentyn S Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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Zhang G, Wu H, Zhang L, Yang L, Xie Y, Guo F, Li H, Tao B, Wang G, Zhang W, Chang H. Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204380. [PMID: 36135779 DOI: 10.1002/smll.202204380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 08/23/2022] [Indexed: 06/16/2023]
Abstract
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.
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Affiliation(s)
- Gaojie Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liang Zhang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Li Yang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuanmiao Xie
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Fei Guo
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Hongda Li
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Boran Tao
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Guofu Wang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Wenfeng Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
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5
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Yin Q, Si G, Li J, Wali S, Ren J, Guo J, Zhang H. Self-powered topological insulator Bi 2Te 3/Ge heterojunction photodetector driven by long-lived excitons transfer. NANOTECHNOLOGY 2022; 33:255502. [PMID: 35290961 DOI: 10.1088/1361-6528/ac5df7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2021] [Accepted: 03/15/2022] [Indexed: 06/14/2023]
Abstract
Due to the wide spectral absorption and ultrafast electron dynamical response under optical excitation, topological insulator (TI) was proposed to have appealing application in next-generation photonic and optoelectronic devices. Whereas, the bandgap-free speciality of Dirac surface states usually leads to a quick relaxation of photoexcited carriers, making the transient excitons difficult to manipulate in isolated TIs. Growth of TI Bi2Te3/Ge heterostructures can promote the specific lifetime and quantity of long-lived excitons, offering the possibility of designing original near-infrared optoelectronic devices, however, the construction of TI Bi2Te3/Ge heterostructures has yet to be investigated. Herein, the high-quality Bi2Te3/Ge heterojunction with clear interface was prepared by physical vapor deposition strategy. A significant photoluminescence quenching behaviour was observed by experiments, which was attributed to the spontaneous excitation transfer of electrons at heterointerface via theoretical analysis. Then, a self-powered heterostructure photodetector was fabricated, which demonstrated a maximal detectivity of 1.3 × 1011Jones, an optical responsivity of 0.97 A W-1, and ultrafast photoresponse speed (12.1μs) under 1064 nm light illumination. This study offers a fundamental understanding of the spontaneous interfacial exciton transfer of TI-based heterostructures, and the as-fabricated photodetectors with excellent performance provided an important step to meet the increasing demand for novel optoelectronic applications in the future.
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Affiliation(s)
- Qin Yin
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Guoxiang Si
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Jiao Li
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Sartaj Wali
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Junfeng Ren
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Jiatian Guo
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Hongbin Zhang
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
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Roy S, Manna S, Mitra C, Pal B. Photothermal Control of Helicity-Dependent Current in Epitaxial Sb 2Te 2Se Topological Insulator Thin-Films at Ambient Temperature. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9909-9916. [PMID: 35156377 DOI: 10.1021/acsami.1c24461] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Optical control of helicity-dependent photocurrent in topological insulator (TI) Sb2Te2Se has been studied at room temperature on epitaxial thin-films grown by pulsed laser deposition (PLD). Comparison with a theoretical model, which fits the data very well, reveals different contributions to the measured photocurrent. Study of the dependence of photocurrent on the angle of incidence (wave-vector) of the excitation light with respect to the sample normal helps to identify the origin of different components of the photocurrent. Enhancement and inversion of the photocurrent in the presence of the photothermal gradient for light incident on two opposite edges of the sample occur due to selective spin-state excitation with two opposite circularly polarized lights in the presence of the unique spin-momentum locked surface states. These observations render the PLD-grown epitaxial TI thin-films promising for optoelectronic devices such as sensors, switches, and actuators whose response can be controlled by polarization as well as the angle of incidence of light under ambient conditions. The polarization response can also be tuned by the photothermal effect by suitably positioning the incident light beam on the device.
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Affiliation(s)
- Samrat Roy
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia, West Bengal 741246, India
| | - Subhadip Manna
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia, West Bengal 741246, India
| | - Chiranjib Mitra
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia, West Bengal 741246, India
| | - Bipul Pal
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia, West Bengal 741246, India
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7
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Affiliation(s)
- Zhongzhou Cheng
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China
| | - Tong Zhao
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China
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8
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Mithun KP, Kar S, Kumar A, Muthu DVS, Ravishankar N, Sood AK. Dirac surface plasmons in photoexcited bismuth telluride nanowires: optical pump-terahertz probe spectroscopy. NANOSCALE 2021; 13:8283-8292. [PMID: 33890585 DOI: 10.1039/d0nr09087e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Collective excitation of Dirac plasmons in graphene and topological insulators has opened new possibilities of tunable plasmonic materials ranging from THz to mid-infrared regions. Using time resolved Optical Pump-Terahertz Probe (OPTP) spectroscopy, we demonstrate the presence of plasmonic oscillations in bismuth telluride nanowires (Bi2Te3 NWs) after photoexcitation using an 800 nm pump pulse. In the frequency domain, the differential conductivity (Δσ = σpump on-σpump off) spectrum shows a Lorentzian response where the resonance frequency (ωp), attributed to surface plasmon oscillations, shifts with photogenerated carrier density (n) as . This dependence establishes the absorption of THz radiation by the Dirac surface plasmon oscillations of the charge carriers in the Topological Surface States (TSS) of Bi2Te3 NWs. Moreover, we obtain a modulation depth, tunable by pump fluence, of ∼40% over the spectral range of 0.5 to 2.5 THz. In addition, the time evolution of Δσ(t) represents a long relaxation channel lasting for more than 50 ps. We model the decay dynamics of Δσ(t) using coupled second order rate equations, highlighting the contributions from surface recombination as well as from trap mediated relaxation channels of the photoinjected carriers.
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Affiliation(s)
- K P Mithun
- Center for Ultrafast Laser Applications, Indian Institute of Science, Bangalore 560012, India.
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Yoo TJ, Kim WS, Chang KE, Kim C, Kwon MG, Jo JY, Lee BH. High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi 2Te 3 Nanowires. NANOMATERIALS 2021; 11:nano11030755. [PMID: 33802969 PMCID: PMC8002706 DOI: 10.3390/nano11030755] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/15/2021] [Revised: 03/06/2021] [Accepted: 03/15/2021] [Indexed: 11/17/2022]
Abstract
A graphene photodetector decorated with Bi2Te3 nanowires (NWs) with a high gain of up to 3 × 104 and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi2Te3 nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi2Te3 NWs junction. Eventually, with low bandgap Bi2Te3 NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).
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Affiliation(s)
- Tae Jin Yoo
- Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea; (T.J.Y.); (C.K.)
| | - Wan Sik Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea; (W.S.K.); (K.E.C.); (M.G.K.); (J.Y.J.)
| | - Kyoung Eun Chang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea; (W.S.K.); (K.E.C.); (M.G.K.); (J.Y.J.)
| | - Cihyun Kim
- Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea; (T.J.Y.); (C.K.)
| | - Min Gyu Kwon
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea; (W.S.K.); (K.E.C.); (M.G.K.); (J.Y.J.)
| | - Ji Young Jo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea; (W.S.K.); (K.E.C.); (M.G.K.); (J.Y.J.)
| | - Byoung Hun Lee
- Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea; (T.J.Y.); (C.K.)
- Correspondence: ; Tel.: +82-54-279-2217; Fax: +82-54-279-2903
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Pandey A, Yadav R, Kaur M, Singh P, Gupta A, Husale S. High performing flexible optoelectronic devices using thin films of topological insulator. Sci Rep 2021; 11:832. [PMID: 33436932 PMCID: PMC7804467 DOI: 10.1038/s41598-020-80738-8] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2020] [Accepted: 12/21/2020] [Indexed: 01/29/2023] Open
Abstract
Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.
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Affiliation(s)
- Animesh Pandey
- grid.419701.a0000 0004 1796 3268Academy of Scientific and Innovative Research (AcSIR), Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India ,grid.419701.a0000 0004 1796 3268Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India
| | - Reena Yadav
- grid.419701.a0000 0004 1796 3268Academy of Scientific and Innovative Research (AcSIR), Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India ,grid.419701.a0000 0004 1796 3268Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India
| | - Mandeep Kaur
- grid.419701.a0000 0004 1796 3268Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India
| | - Preetam Singh
- grid.419701.a0000 0004 1796 3268Academy of Scientific and Innovative Research (AcSIR), Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India ,grid.419701.a0000 0004 1796 3268Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India
| | - Anurag Gupta
- grid.419701.a0000 0004 1796 3268Academy of Scientific and Innovative Research (AcSIR), Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India ,grid.419701.a0000 0004 1796 3268Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India
| | - Sudhir Husale
- grid.419701.a0000 0004 1796 3268Academy of Scientific and Innovative Research (AcSIR), Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India ,grid.419701.a0000 0004 1796 3268Council of Scientific and Industrial Research, National Physical Laboratory, Dr. K. S Krishnan Road, New Delhi, 110012 India
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11
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Wu W, Wang Y, Niu Y, Wang P, Chen M, Sun J, Wang N, Wu D, Zhao Z. Thermal Localization Enhanced Fast Photothermoelectric Response in a Quasi-One-Dimensional Flexible NbS 3 Photodetector. ACS APPLIED MATERIALS & INTERFACES 2020; 12:14165-14173. [PMID: 32119514 DOI: 10.1021/acsami.0c00764] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Ultra-broadband photodetection is crucial for various applications like imaging and sensing and has become a hot research topic in recent years. However, most of the reported ultra-broadband photodetectors can only cover the range from ultraviolet to infrared, which is insufficient. Herein, a photothermoelectric (PTE) detector made of NbS3 is reported. The device shows a considerable performance from ultraviolet to terahertz. For all examined wavelengths, the photoresponsivities are all larger than 1 V W-1 while the response time is less than 10 ms, much shorter than the reported ultra-broadband photodetectors made of millimetric scale graphene, ternary chalcogenide single crystal, and other materials. The extraordinary performance is fully discussed and can be attributed to the thermal localization enhanced PTE effect. Because of the short thermal decay length and low thermal loss, the heat generated by the illumination is localized in only a micrometer scale along the channel, and thus a strong PTE response is produced. In addition, the fabricated device also demonstrates robust flexibility and stability. Thanks to the quasi-one-dimensional (quasi-1D) structure, the NbS3 crystal is easy to be scaled down and thus intrinsically facilitate the integration of detectors. With these favorable merits, the quasi-1D NbS3 crystal holds a promising potential in high-performance, ultra-broadband photodetectors.
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Affiliation(s)
- Weidong Wu
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Yingxin Wang
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Yingying Niu
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Pengfei Wang
- Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Meng Chen
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Jialin Sun
- Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Nanlin Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Dong Wu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Ziran Zhao
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
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12
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Zhang Y, You Q, Huang W, Hu L, Ju J, Ge Y, Zhang H. Few-layer hexagonal bismuth telluride (Bi 2Te 3) nanoplates with high-performance UV-Vis photodetection. NANOSCALE ADVANCES 2020; 2:1333-1339. [PMID: 36133032 PMCID: PMC9419258 DOI: 10.1039/d0na00006j] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2020] [Accepted: 02/09/2020] [Indexed: 05/21/2023]
Abstract
It is widely known that the excellent intrinsic electronic and optoelectronic advantages of bismuthene and tellurene make them attractive for applications in transistors and logic and optoelectronic devices. However, their poor optoelectronic performances, such as photocurrent density and photoresponsivity, under ambient conditions severely hinder their practical application. To satisfy the demand of high-performance optoelectronic devices and topological insulators, bismuth telluride nanoplates (Bi2Te3 NPs) with different sizes, successfully synthesized by a solvothermal approach have been, for the first time, employed to fabricate a working electrode for photoelectrochemical (PEC)-type photodetection. It is demonstrated that the as-prepared Bi2Te3 NP-based photodetectors exhibit remarkably improved photocurrent density, enhanced photoresponsivity, and faster response time and recovery time in the UV-Vis region, compared to bismuthene and tellurene-based photodetectors. Additionally, the PEC stability measurements show that Bi2Te3 NPs have a comparable long-term stability for on/off switching behaviour for the bismuthene and tellurene-based photodetectors. Therefore, it is anticipated that the present work can provide fundamental acknowledgement of the optoelectronic performance of a PEC-type Bi2Te3 NP-based photodetector, shedding light on new designs of high-performance topological insulator-based optoelectronic devices.
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Affiliation(s)
- Ye Zhang
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University Shenzhen 518060 China
| | - Qi You
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University Shenzhen 518060 China
| | - Weichun Huang
- Nantong Key Lab of Intelligent and New Energy Materials, College of Chemistry and Chemical Engineering, Nantong University Nantong 226019 Jiangsu P. R. China
| | - Lanping Hu
- Nantong Key Lab of Intelligent and New Energy Materials, College of Chemistry and Chemical Engineering, Nantong University Nantong 226019 Jiangsu P. R. China
| | - Jianfeng Ju
- Nantong Key Lab of Intelligent and New Energy Materials, College of Chemistry and Chemical Engineering, Nantong University Nantong 226019 Jiangsu P. R. China
| | - Yanqi Ge
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University Shenzhen 518060 China
| | - Han Zhang
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University Shenzhen 518060 China
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13
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Gao W, Zheng Z, Huang L, Yao J, Zhao Y, Xiao Y, Li J. Self-Powered SnS 1-xSe x Alloy/Silicon Heterojunction Photodetectors with High Sensitivity in a Wide Spectral Range. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40222-40231. [PMID: 31601094 DOI: 10.1021/acsami.9b12276] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Alloy engineering and heterostructures designing are two efficient methods to improve the photosensitivity of two-dimensional (2D) material-based photodetectors. Herein, we report the first-principle calculation about the band structure of SnS1-xSex (0 ≤ x ≤ 1) and synthesize these alloy nanosheets. Systematic measurements indicate that SnS0.25Se0.75 exhibits the highest hole mobility (0.77 cm2·V-1·s-1) and a moderate photoresponsivity (4.44 × 102 A·W-1) with fast response speed (32.1/57.5 ms) under 635 nm irradiation. Furthermore, to reduce the dark current and strengthen the light absorption, a self-driven SnS0.25Se0.75/n-Si device has been fabricated. The device achieved a preeminent photo-responsivity of 377 mA·W-1, a detectivity of ∼1011 Jones and Ilight/Idark ratio of ∼4.5 × 102. In addition, the corresponding rising/decay times are as short as 4.7/3.9 ms. Moreover, a broadband sensitivity from 635 to 1200 nm is obtained and the related photoswitching curves are stable and reproducibility. Noticeably, the above parameters are comparable or superior to the most of reported group IVA layered materials-based self-driven photodetectors. Last, the synergistic effects between the SnS0.25Se0.75 nanosheets and the n-Si have been discussed by the band alignment. These brilliant results will pave a new pathway for the development of next generation 2D alloy-based photoelectronic devices.
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Affiliation(s)
- Wei Gao
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
- Department of Electronic Engineering , The Chinese University of Hong Kong , Hong Kong SAR , P. R. China
| | - Le Huang
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering , Sun Yat-Sen University , Guangzhou 510275 , Guangdong , P. R. China
| | - Yu Zhao
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
| | - Ye Xiao
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
| | - Jingbo Li
- State Key Laboratory of Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- Institute of Semiconductors , South China Normal University , Guangzhou 510631 , P. R. China
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14
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Ying H, Li X, Wu Y, Yao Y, Xi J, Su W, Jin C, Xu M, He Z, Zhang Q. High-performance ultra-violet phototransistors based on CVT-grown high quality SnS 2 flakes. NANOSCALE ADVANCES 2019; 1:3973-3979. [PMID: 36132114 PMCID: PMC9418408 DOI: 10.1039/c9na00471h] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2019] [Accepted: 08/21/2019] [Indexed: 05/07/2023]
Abstract
van der Waals layered two-dimensional (2D) metal dichalcogenides, such as SnS2, have garnered great interest owing to their new physics in the ultrathin limit, and become potential candidates for the next-generation electronics and/or optoelectronics fields. Herein, we report high-performance UV photodetectors established on high quality SnS2 flakes and address the relatively lower photodetection capability of the thinner flakes via a compatible gate-controlling strategy. SnS2 flakes with different thicknesses were mechanically exfoliated from CVT-grown high-quality 2H-SnS2 single crystals. The photodetectors fabricated using SnS2 flakes reveal a desired response performance (R λ ≈ 112 A W-1, EQE ≈ 3.7 × 104%, and D* ≈ 1.18 × 1011 Jones) under UV light with a very low power density (0.2 mW cm-2 @ 365 nm). Specifically, SnS2 flakes present a positive thickness-dependent photodetection behavior caused by the enhanced light absorption capacity of thicker samples. Fortunately, the responsivity of thin SnS2 flakes (e.g. ∼15 nm) could be indeed enhanced to ∼140 A W-1 under a gate bias of +20 V, reaching the performance level of thicker samples without gate bias (e.g. ∼144 A W-1 for a ∼60 nm flake). Our results offer an efficient way to choose 2D crystals with controllable thicknesses as optimal candidates for desirable optoelectronic devices.
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Affiliation(s)
- Haoting Ying
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Xin Li
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Yutong Wu
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Yi Yao
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Junhua Xi
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Weitao Su
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
- College of Science, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Chengchao Jin
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Minxuan Xu
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Zhiwei He
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Qi Zhang
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
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15
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Chen X, Wang D, Wang T, Yang Z, Zou X, Wang P, Luo W, Li Q, Liao L, Hu W, Wei Z. Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level. ACS APPLIED MATERIALS & INTERFACES 2019; 11:33188-33193. [PMID: 31415147 DOI: 10.1021/acsami.9b07891] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported because they are promising as an alternative for high-performance devices. Owing to the Schottky built-in electric fields in the MSM structure photodetectors, enhancements in photoresponsivity can be realized. Thus, strengthening the built-in electric field is an efficacious way to make the detection capability better. In this study, we fabricate a single GaAs nanowire MSM photodetector with superior performance by doping-adjusting the Fermi level to strengthen the built-in electric field. An outstanding responsivity of 1175 A/W is obtained. This is two orders of magnitude better than the responsivity of the undoped sample. Scanning photocurrent mappings and simulations are performed to confirm that the enhancement in responsivity is because of the increase in the hole Schottky built-in electric field, which can separate and collect the photogenerated carriers more effectively. The eloquent evidence clearly proves that doping-adjusting the Fermi level has great potential applications in high-performance GaAs nanowire photodetectors and other functional photodetectors.
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Affiliation(s)
- Xue Chen
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
| | - Tuo Wang
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
| | - Zhenyu Yang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and Technology , Wuhan University , Wuhan 430072 , China
| | - Xuming Zou
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Wenjin Luo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Qing Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Lei Liao
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and Technology , Wuhan University , Wuhan 430072 , China
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China
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16
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Wang F, Zhang Y, Gao Y, Luo P, Su J, Han W, Liu K, Li H, Zhai T. 2D Metal Chalcogenides for IR Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1901347. [PMID: 31111680 DOI: 10.1002/smll.201901347] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2019] [Revised: 04/16/2019] [Indexed: 05/25/2023]
Abstract
Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next-generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs-based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yue Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yu Gao
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jianwei Su
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wei Han
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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Parbatani A, Song ES, Claypoole J, Yu B. High performance broadband bismuth telluride tetradymite topological insulator photodiode. NANOTECHNOLOGY 2019; 30:165201. [PMID: 30620938 DOI: 10.1088/1361-6528/aafc84] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
A small bulk gap and the presence of Dirac electrons due to conductive surface states make tetradymite topological insulators promising candidates for optoelectronic devices. In this work, we demonstrate a highly responsive Bi2Te3-Si heterostructure photodiode. The thermally evaporated Bi2Te3 film, exhibiting a nanocrystalline nature, shows p-type doping behavior due to bismuth vacancies. As a result of the work function difference between Bi2Te3 and p-type Si, charge transfer occurs and a Schottky barrier is formed. Using the thermionic emission model, the barrier height (ΦB) is extracted to be ∼0.405 eV. For minimizing the effect of extrinsic defects, the photodiodes were capped with graphene or Si3N4. Since graphene acts as an efficient photoexcited carrier collector, the graphene capped device outperforms the Si3N4 capped device. The higher quality Bi2Te3 nanocrystalline film of the Si3N4 capped photodiode contributes to a one-order-of-magnitude improvement in responsivity at 1550 nm wavelength, as compared to the graphene capped photodiode. The Si3N4 capped photodiode shows photoresponse even at zero bias for 1550 nm wavelength. Built-in potential due to charge transfer at the interface of Bi2Te3 and Si capped with a graphene electrode exhibits the highest responsivity (8.9 A W-1). Broadband photodetection is observed in both types of photodiodes.
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Affiliation(s)
- Asish Parbatani
- SUNY Polytechnic Institute, The State University of New York Albany, NY 12203, United States of America
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18
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Novel synthesis of topological insulator based nanostructures (Bi 2Te 3) demonstrating high performance photodetection. Sci Rep 2019; 9:3804. [PMID: 30846755 PMCID: PMC6405830 DOI: 10.1038/s41598-019-40394-z] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2018] [Accepted: 02/13/2019] [Indexed: 11/18/2022] Open
Abstract
The rapid progress in 2D material research has triggered the growth of various quantum nanostructures- nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melting approach to form nanostructures of TI (topological insulator) materials, their hybrid heterostructures with other novel 2D materials and their scalable growth. The substrate and temperature dependent growth is investigated on insulating, superconducting, metallic, semiconducting and ferromagnetic materials. The temperature dependent synthesis enables the growth of single, few quintuples to nanosheets and nanocrystals. The density of nanostructure growth is seen more on fabricated patterns or textured substrates. The fabricated nanostructure based devices show the broadband photodetection from ultraviolet to near infrared and exhibit high photoresponsivity. Ultimately, this unique synthesis process will give easy access to fabricate devices on user friendly substrates, study nanostructures and scalable growth will enable their future technology applications.
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19
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Bhattacharyya B, Awana VPS, Senguttuvan TD, Ojha VN, Husale S. Proximity-induced supercurrent through topological insulator based nanowires for quantum computation studies. Sci Rep 2018; 8:17237. [PMID: 30467364 PMCID: PMC6250704 DOI: 10.1038/s41598-018-35424-1] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2018] [Accepted: 11/06/2018] [Indexed: 11/11/2022] Open
Abstract
Proximity-induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault-tolerant quantum computation. Recent theoretically proposed architectures for topological quantum computation via Majoranas are based on large networks of Kitaev’s one-dimensional quantum wires, which pose a huge experimental challenge in terms of scalability of the current single nanowire based devices. Here, we address this problem by realizing robust superconductivity in junctions of fabricated topological insulator (Bi2Se3) nanowires proximity-coupled to conventional s-wave superconducting (W) electrodes. Milling technique possesses great potential in fabrication of any desired shapes and structures at nanoscale level, and therefore can be effectively utilized to scale-up the existing single nanowire based design into nanowire based network architectures. We demonstrate the dominant role of ballistic topological surface states in propagating the long-range proximity induced superconducting order with high IcRN product in long Bi2Se3 junctions. Large upper critical magnetic fields exceeding the Chandrasekhar-Clogston limit suggests the existence of robust superconducting order with spin-triplet cooper pairing. An unconventional inverse dependence of IcRN product on the width of the nanowire junction was also observed.
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Affiliation(s)
- Biplab Bhattacharyya
- Academy of Scientific and Innovative Research (AcSIR), National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India.,National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India
| | - V P S Awana
- Academy of Scientific and Innovative Research (AcSIR), National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India.,National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India
| | - T D Senguttuvan
- Academy of Scientific and Innovative Research (AcSIR), National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India.,National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India
| | - V N Ojha
- Academy of Scientific and Innovative Research (AcSIR), National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India.,National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India
| | - Sudhir Husale
- Academy of Scientific and Innovative Research (AcSIR), National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India. .,National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India.
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Abstract
This review briefly describes the development of synthetic topological insulator materials in the application of advanced electronic devices. As a new class of quantum matter, topological insulators with insulating bulk and conducting surface states have attracted attention in more and more research fields other than condensed matter physics due to their intrinsic physical properties, which provides an excellent basis for novel nanoelectronic, optoelectronic, and spintronic device applications. In comparison to the mechanically exfoliated samples, the newly emerging topological insulator nanostructures prepared with various synthetical approaches are more intriguing because the conduction contribution of the surface states can be significantly enhanced due to the larger surface-to-volume ratio, better manifesting the unique properties of the gapless surface states. So far, these synthetic topological insulator nanostructures have been implemented in different electrically accessible device platforms via electrical, magnetic and optical characterizations for material investigations and device applications, which will be introduced in this review.
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