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Iyer PP, Prescott S, Addamane S, Jung H, Renteria E, Henshaw J, Mounce A, Luk TS, Mitrofanov O, Brener I. Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens' Metasurfaces. NANO LETTERS 2024. [PMID: 38620181 DOI: 10.1021/acs.nanolett.3c04846] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
Advancements in photonic quantum information systems (QIS) have driven the development of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots (QDs) as single photon sources. Strain-free, monodisperse, and spatially sparse local-droplet-etched (LDE) QDs have recently been demonstrated as a superior alternative to traditional Stranski-Krastanov QDs. However, integration of LDE QDs into nanophotonic architectures with the ability to scale to many interacting QDs is yet to be demonstrated. We present a potential solution by embedding isolated LDE GaAs QDs within an Al0.4Ga0.6As Huygens' metasurface with spectrally overlapping fundamental electric and magnetic dipolar resonances. We demonstrate for the first time a position- and size-independent, 1 order of magnitude increase in the collection efficiency and emission lifetime control for single-photon emission from LDE QDs embedded within the Huygens' metasurfaces. Our results represent a significant step toward leveraging the advantages of LDE QDs within nanophotonic architectures to meet the scalability demands of photonic QIS.
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Affiliation(s)
- Prasad P Iyer
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Samuel Prescott
- University College London, Electronic and Electrical Engineering, London WC1E 7JE, U.K
| | - Sadhvikas Addamane
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Hyunseung Jung
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Emma Renteria
- Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87185, United States
| | - Jacob Henshaw
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Andrew Mounce
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Ting S Luk
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Oleg Mitrofanov
- University College London, Electronic and Electrical Engineering, London WC1E 7JE, U.K
| | - Igal Brener
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
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Zhou Y, Wang Y, Yvind K, Gregersen N, Pu M. Ultra-small mode area V-groove waveguide design for on-chip single-photon emission. OPTICS EXPRESS 2024; 32:2884-2893. [PMID: 38297806 DOI: 10.1364/oe.515904] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 12/29/2023] [Indexed: 02/02/2024]
Abstract
We numerically investigate the figures of merit for single-photon emission in a planar GaAs-on-insulator waveguide featuring a V-groove geometry. Thanks to a field enhancement effect arising due to boundary conditions of this waveguide, the structure features an ultra-small mode area enabling a factor of a maximum 2.8 times enhancement of the Purcell factor for quantum dot and a more significant 7 times enhancement for the atomic-size solid-state emitters with the aligned dipole orientation. In addition, the coupling efficiency to the fundamental quasi-TE mode is also improved. To take into account potential on-chip integration, we further show that the V-groove mode profile can be converted using a tapering section to the mode profile of a standard ridge waveguide while maintaining both the high Purcell factor and the good fundamental mode coupling efficiency.
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Martyniuk P, Wang P, Rogalski A, Gu Y, Jiang R, Wang F, Hu W. Infrared avalanche photodiodes from bulk to 2D materials. LIGHT, SCIENCE & APPLICATIONS 2023; 12:212. [PMID: 37652900 PMCID: PMC10471776 DOI: 10.1038/s41377-023-01259-3] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Revised: 08/07/2023] [Accepted: 08/07/2023] [Indexed: 09/02/2023]
Abstract
Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one-optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of AIIIBV, AIIBVI, and potential alternatives to formerly mentioned-"third wave" superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device's performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in AIIIBV APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, "Ga-based" and "Ga-free"), and 2D materials-based IR APDs. The latter-atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed AIIIBV APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs' performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs' active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~105 for MWIR [wavelength, λ = 4 μm, temperature, T = 10-180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance-sensitivity and low excess noise.
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Affiliation(s)
- Piotr Martyniuk
- Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908, Warsaw, Poland.
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China.
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
| | - Antoni Rogalski
- Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908, Warsaw, Poland
| | - Yue Gu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
| | - Ruiqi Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
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Kroychuk MK, Shorokhov AS, Yagudin DF, Rakhlin MV, Klimko GV, Toropov AA, Shubina TV, Fedyanin AA. Quantum Dot Photoluminescence Enhancement in GaAs Nanopillar Oligomers Driven by Collective Magnetic Modes. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:507. [PMID: 36770468 PMCID: PMC9919544 DOI: 10.3390/nano13030507] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Revised: 01/18/2023] [Accepted: 01/24/2023] [Indexed: 06/18/2023]
Abstract
Single photon sources based on semiconductor quantum dots are one of the most prospective elements for optical quantum computing and cryptography. Such systems are often based on Bragg resonators, which provide several ways to control the emission of quantum dots. However, the fabrication of periodic structures with many thin layers is difficult. On the other hand, the coupling of single-photon sources with resonant nanoclusters made of high-index dielectric materials is known as a promising way for emission control. Our experiments and calculations show that the excitation of magnetic Mie-type resonance by linearly polarized light in a GaAs nanopillar oligomer with embedded InAs quantum dots leads to quantum emitters absorption efficiency enhancement. Moreover, the nanoresonator at the wavelength of magnetic dipole resonance also acts as a nanoantenna for a generated signal, allowing control over its radiation spatial profile. We experimentally demonstrated an order of magnitude emission enhancement and numerically reached forty times gain in comparison with unstructured film. These findings highlight the potential of quantum dots coupling with Mie-resonant oligomers collective modes for nanoscale single-photon sources development.
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Affiliation(s)
- Maria K. Kroychuk
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
| | | | - Damir F. Yagudin
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
| | | | | | | | | | - Andrey A. Fedyanin
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
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Belamkadem L, Mommadi O, Boussetta R, Chnafi M, Vinasco JA, Laroze D, Pérez LM, El Moussaouy A, Meziani YM, Kasapoglu E, Tulupenko V, Duque CA. First Study on the Electronic and Donor Atom Properties of the Ultra-Thin Nanoflakes Quantum Dots. NANOMATERIALS 2022; 12:nano12060966. [PMID: 35335780 PMCID: PMC8954822 DOI: 10.3390/nano12060966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Revised: 03/03/2022] [Accepted: 03/07/2022] [Indexed: 01/27/2023]
Abstract
Nanoflakes ultra-thin quantum dots are theoretically studied as innovative nanomaterials delivering outstanding results in various high fields. In this work, we investigated the surface properties of an electron confined in spherical ultra-thin quantum dots in the presence of an on-center or off-center donor impurity. Thus, we have developed a novel model that leads us to investigate the different nanoflake geometries by changing the spherical nanoflake coordinates (R, α, ϕ). Under the infinite confinement potential model, the study of these nanostructures is performed within the effective mass and parabolic band approximations. The resolution of the Schrödinger equation is accomplished by the finite difference method, which allows obtaining the eigenvalues and wave functions for an electron confined in the nanoflakes surface. Through the donor and electron energies, the transport, optoelectronic, and surface properties of the nanostructures were fully discussed according to their practical significance. Our findings demonstrated that these energies are more significant in the small nanoflakes area by altering the radius and the polar and azimuthal angles. The important finding shows that the ground state binding energy depends strongly on the geometry of the nanoflakes, despite having the same surface. Another interesting result is that the presence of the off-center shallow donor impurity permits controlling the binding energy, which leads to adjusting the immense behavior of the curved surface nanostructures.
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Affiliation(s)
- Laaziz Belamkadem
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
| | - Omar Mommadi
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
- Laboratory of Innovation in Science, Technology and Education, Regional Centre for the Professions of Education and Training, Oujda 60000, Morocco
- Correspondence:
| | - Reda Boussetta
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
| | - Mohamed Chnafi
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
| | - Juán A. Vinasco
- Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile; (J.A.V.); (D.L.)
| | - David Laroze
- Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile; (J.A.V.); (D.L.)
| | - Laura M. Pérez
- Departamento de Física, FACI, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile;
| | - Abdelaziz El Moussaouy
- OAPM Group, Laboratory of Materials, Waves, Energy and Environment, Department of Physics, Faculty of Sciences, University Mohamed I, Oujda 60000, Morocco; (L.B.); (R.B.); (M.C.); (A.E.M.)
- Laboratory of Innovation in Science, Technology and Education, Regional Centre for the Professions of Education and Training, Oujda 60000, Morocco
| | - Yahya M. Meziani
- Group of Nanotechnology, USAL-NANOLAB, Universidad de Salamanca, 37008 Salamanca, Spain;
| | - Esin Kasapoglu
- Faculty of Science, Department of Physics, Sivas Cumhuriyet University, Sivas 58140, Turkey;
| | | | - Carlos A. Duque
- Grupo de Materia Condensada-UdeA, Facultad de Ciencias Exactas y Naturales, Instituto de Física, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín AA 1226, Colombia;
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Salomone M, Re Fiorentin M, Cicero G, Risplendi F. Point Defects in Two-Dimensional Indium Selenide as Tunable Single-Photon Sources. J Phys Chem Lett 2021; 12:10947-10952. [PMID: 34735143 PMCID: PMC8607502 DOI: 10.1021/acs.jpclett.1c02912] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2021] [Revised: 10/18/2021] [Accepted: 10/27/2021] [Indexed: 06/13/2023]
Abstract
In the past few years remarkable interest has been kindled by the development of nonclassical light sources and, in particular, of single-photon emitters (SPE), which represent fundamental building blocks for optical quantum technology. In this Letter, we analyze the stability and electronic properties of an InSe monolayer with point defects with the aim of demonstrating its applicability as an SPE. The presence of deep defect states within the InSe band gap is verified when considering substitutional defects with atoms belonging to group IV, V, and VI. In particular, the optical properties of Ge as substitution impurity of Se predicted by solving the Bethe-Salpeter equation on top of the GW corrected electronic states show that transitions between the valence band maximum and the defect state are responsible for the absorption and spontaneous emission processes, so that the latter results in a strongly peaked spectrum in the near-infrared. These properties, together with a high localization of the involved electronic states, appear encouraging in the quest for novel SPE materials.
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Affiliation(s)
- Mattia Salomone
- Dipartimento
di Scienza Applicata e Tecnologia, Politecnico
di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy
| | - Michele Re Fiorentin
- Center
for Sustainable Future Technologies, Istituto
Italiano di Tecnologia, via Livorno 60, 10144 Torino, Italy
| | - Giancarlo Cicero
- Dipartimento
di Scienza Applicata e Tecnologia, Politecnico
di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy
| | - Francesca Risplendi
- Dipartimento
di Scienza Applicata e Tecnologia, Politecnico
di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy
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Taurino A, Catalano M, Kim MJ, Tasco V, Tarantini I, Passaseo A, Cretì A, Lomascolo M. InAs/AlGaAs quantum dots grown by a novel molecular beam epitaxy multistep design for intermediate band solar cells: physical insight into the structure, composition, strain and optical properties. CrystEngComm 2019. [DOI: 10.1039/c9ce00792j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Structural, chemical and strain assessment of In-based quantum dots grown by a peculiar multistep MBE process, for application in intermediate band solar cells (IBSCs).
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Affiliation(s)
- Antonietta Taurino
- IMM-CNR Institute for Microelectronic and Microsystems
- Campus Ecotekne
- 73100 Lecce
- Italy
| | - Massimo Catalano
- IMM-CNR Institute for Microelectronic and Microsystems
- Campus Ecotekne
- 73100 Lecce
- Italy
- Department of Materials Science and Engineering
| | - Moon J. Kim
- Department of Materials Science and Engineering
- University of Texas
- Dallas
- USA
| | | | - Iolena Tarantini
- Mathematics and Physics Department
- University of Salento
- 73100 Lecce
- Italy
| | - Adriana Passaseo
- CNR-Nanotec
- Nanotechnology Institute
- Campus Ecotekne
- 73100 Lecce
- Italy
| | - Arianna Cretì
- IMM-CNR Institute for Microelectronic and Microsystems
- Campus Ecotekne
- 73100 Lecce
- Italy
| | - Mauro Lomascolo
- IMM-CNR Institute for Microelectronic and Microsystems
- Campus Ecotekne
- 73100 Lecce
- Italy
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