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Liu P, Makarova A, Freiberg K, Grinter DC, Sharma D, Ferrer P, Chuvenkova O, Deckert-Gaudig T, Turishchev S, Lippmann S, Sivakov V. Volcanic Eruption in the Nanoworld: Efficient Oxygen Exchange at the Si/SnO 2 Interface. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404508. [PMID: 39007250 DOI: 10.1002/smll.202404508] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2024] [Revised: 07/02/2024] [Indexed: 07/16/2024]
Abstract
Here, a phenomenon of efficient oxygen exchange between a silicon surface and a thin layer of tin dioxide during chemical vapor deposition is presented, which leads to a unique Sn:SiO2 layer. Under thermodynamic conditions in the temperature range of 725-735 °C, the formation of nanostructures with volcano-like shapes in "active" and "dormant" states are observed. Extensive characterization techniques, such as electron microscopy, X-ray diffraction, synchrotron radiation-based X-ray photoelectron, and X-ray absorption near-edge structure spectroscopy, are applied to study the formation. The mechanism is related to the oxygen retraction between tin(IV) oxide and silicon surface, leading to the thermodynamically unstable tin(II)oxide, which is immediately disproportionate to metallic Sn and SnO2 localized in the SiO2 matrix. The diffusion of metallic tin in the amorphous silicon oxide matrix leads to larger agglomerates of nanoparticles, which is similar to the formation of a magma chamber during the natural volcanic processes followed by magma eruption, which here is associated with the formation of depressions on the surface filled with metallic tin particles. This new effect contributes a new approach to the formation of functional composites but also inspires the development of unique Sn:SiO2 nanostructures for diverse application scenarios, such as thermal energy storage.
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Affiliation(s)
- Poting Liu
- Leibniz Institute of Photonic Technology, Department Functional Interfaces, Albert-Einstein Str. 9, 07745, Jena, Germany
- Friedrich Schiller University Jena, Institute of Physical Chemistry, Helmholtzweg 4, 07743, Jena, Germany
| | - Anna Makarova
- Free University Berlin, Institute of Chemistry and Biochemistry, Physical Chemistry, Arnimallee 22, 14195, Berlin, Germany
| | - Katharina Freiberg
- Friedrich Schiller University Jena, Otto Schott Institute of Materials Research, Löbdergraben 32, 07743, Jena, Germany
| | - David C Grinter
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | - Divanshu Sharma
- Leibniz Institute of Photonic Technology, Department Functional Interfaces, Albert-Einstein Str. 9, 07745, Jena, Germany
- Friedrich Schiller University Jena, Institute of Physical Chemistry, Helmholtzweg 4, 07743, Jena, Germany
| | - Pilar Ferrer
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | - Olga Chuvenkova
- Voronezh State University, Physics Faculty, General Physics Department, Universitetskaya pl.1, Voronezh, 394018, Russian Federation
| | - Tanja Deckert-Gaudig
- Leibniz Institute of Photonic Technology, Department Functional Interfaces, Albert-Einstein Str. 9, 07745, Jena, Germany
- Friedrich Schiller University Jena, Institute of Physical Chemistry, Helmholtzweg 4, 07743, Jena, Germany
| | - Sergey Turishchev
- Voronezh State University, Physics Faculty, General Physics Department, Universitetskaya pl.1, Voronezh, 394018, Russian Federation
| | - Stephanie Lippmann
- Friedrich Schiller University Jena, Otto Schott Institute of Materials Research, Löbdergraben 32, 07743, Jena, Germany
- Friedrich Schiller University Jena, Institute of Applied Physics, Albert-Einstein Str. 15, 07745, Jena, Germany
| | - Vladimir Sivakov
- Leibniz Institute of Photonic Technology, Department Functional Interfaces, Albert-Einstein Str. 9, 07745, Jena, Germany
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Kaasalainen M, Zhang R, Vashisth P, Birjandi AA, S'Ari M, Martella DA, Isaacs M, Mäkilä E, Wang C, Moldenhauer E, Clarke P, Pinna A, Zhang X, Mustfa SA, Caprettini V, Morrell AP, Gentleman E, Brauer DS, Addison O, Zhang X, Bergholt M, Al-Jamal K, Volponi AA, Salonen J, Hondow N, Sharpe P, Chiappini C. Lithiated porous silicon nanowires stimulate periodontal regeneration. Nat Commun 2024; 15:487. [PMID: 38216556 PMCID: PMC10786831 DOI: 10.1038/s41467-023-44581-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 12/20/2023] [Indexed: 01/14/2024] Open
Abstract
Periodontal disease is a significant burden for oral health, causing progressive and irreversible damage to the support structure of the tooth. This complex structure, the periodontium, is composed of interconnected soft and mineralised tissues, posing a challenge for regenerative approaches. Materials combining silicon and lithium are widely studied in periodontal regeneration, as they stimulate bone repair via silicic acid release while providing regenerative stimuli through lithium activation of the Wnt/β-catenin pathway. Yet, existing materials for combined lithium and silicon release have limited control over ion release amounts and kinetics. Porous silicon can provide controlled silicic acid release, inducing osteogenesis to support bone regeneration. Prelithiation, a strategy developed for battery technology, can introduce large, controllable amounts of lithium within porous silicon, but yields a highly reactive material, unsuitable for biomedicine. This work debuts a strategy to lithiate porous silicon nanowires (LipSiNs) which generates a biocompatible and bioresorbable material. LipSiNs incorporate lithium to between 1% and 40% of silicon content, releasing lithium and silicic acid in a tailorable fashion from days to weeks. LipSiNs combine osteogenic, cementogenic and Wnt/β-catenin stimuli to regenerate bone, cementum and periodontal ligament fibres in a murine periodontal defect.
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Affiliation(s)
- Martti Kaasalainen
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Ran Zhang
- Department of Oral Pathology, Peking University School and Hospital of Stomatology, Beijing, 100081, PR China
| | - Priya Vashisth
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Anahid Ahmadi Birjandi
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Mark S'Ari
- School of Chemical and Process Engineering, University of Leeds, Leeds, LS2 9JT, UK
| | | | - Mark Isaacs
- Department of Chemistry, University College London, London, WC1H 0AJ, UK
- HarwellXPS, Research Complex at Harwell, Rutherford Appleton Labs, Didcot, OX11 0DE, UK
| | - Ermei Mäkilä
- Department of Physics and Astronomy, University of Turku, Turku, 20014, Finland
| | - Cong Wang
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Evelin Moldenhauer
- Postnova Analytics GmbH, Rankinestr. 1, Landsberg am Lech, 86899, Germany
| | - Paul Clarke
- Postnova Analytics GmbH, Rankinestr. 1, Landsberg am Lech, 86899, Germany
| | - Alessandra Pinna
- Department of Materials, Imperial College London, London, SW72AZ, UK
- The Francis Crick Institute, London, NW11AT, UK
- School of Veterinary Medicine, Faculty of Health and Medical Sciences, University of Surrey, Guildford, GU2 7XH, UK
| | - Xuechen Zhang
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Salman A Mustfa
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Valeria Caprettini
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Alexander P Morrell
- Centre for Oral Clinical & Translational Sciences, King's College London, London, SE1 9RT, UK
| | - Eileen Gentleman
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Delia S Brauer
- Otto Schott Institute of Materials Research, Friedrich Schiller University Jena, Jena, 07743, Germany
| | - Owen Addison
- Centre for Oral Clinical & Translational Sciences, King's College London, London, SE1 9RT, UK
| | - Xuehui Zhang
- Department of Dental Materials & NMPA Key Laboratory for Dental Materials, Peking University School and Hospital of Stomatology, Beijing, 100081, PR China
| | - Mads Bergholt
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Khuloud Al-Jamal
- Institute of Pharmaceutical Science, King's College London, London, SE1 9NH, UK
| | - Ana Angelova Volponi
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
| | - Jarno Salonen
- Department of Physics and Astronomy, University of Turku, Turku, 20014, Finland
| | - Nicole Hondow
- School of Chemical and Process Engineering, University of Leeds, Leeds, LS2 9JT, UK
| | - Paul Sharpe
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK
- Institute of Animal Physiology and Genetics, Czech Academy of Sciences, Brno, 602 00, Czech Republic
| | - Ciro Chiappini
- Centre for Craniofacial and Regenerative Biology, King's College London, London, SE1 9RT, UK.
- London Centre for Nanotechnology, King's College London, London, WC2R 2LS, UK.
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3
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Liu P, Sivakov V. Tin/Tin Oxide Nanostructures: Formation, Application, and Atomic and Electronic Structure Peculiarities. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2391. [PMID: 37686899 PMCID: PMC10490065 DOI: 10.3390/nano13172391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 08/18/2023] [Accepted: 08/19/2023] [Indexed: 09/10/2023]
Abstract
For a very long period, tin was considered one of the most important metals for humans due to its easy access in nature and abundance of sources. In the past, tin was mainly used to make various utensils and weapons. Today, nanostructured tin and especially its oxide materials have been found to possess many characteristic physical and chemical properties that allow their use as functional materials in various fields such as energy storage, photocatalytic process, gas sensors, and solar cells. This review discusses current methods for the synthesis of Sn/SnO2 composite materials in form of powder or thin film, as well as the application of the most advanced characterization tools based on large-scale synchrotron radiation facilities to study their chemical composition and electronic features. In addition, the applications of Sn/SnO2 composites in various fields are presented in detail.
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Affiliation(s)
- Poting Liu
- Department Functional Interfaces, Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745 Jena, Germany;
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Helmholtzweg 4, 07743 Jena, Germany
| | - Vladimir Sivakov
- Department Functional Interfaces, Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745 Jena, Germany;
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Liu P, Schleusener A, Zieger G, Bochmann A, van Spronsen MA, Sivakov V. Nanostructured Silicon Matrix for Materials Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206318. [PMID: 36642786 DOI: 10.1002/smll.202206318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2022] [Revised: 12/20/2022] [Indexed: 06/17/2023]
Abstract
Tin-containing layers with different degrees of oxidation are uniformly distributed along the length of silicon nanowires formed by a top-down method by applying metalorganic chemical vapor deposition. The electronic and atomic structure of the obtained layers is investigated by applying nondestructive surface-sensitive X-ray absorption near edge spectroscopy using synchrotron radiation. The results demonstrated, for the first time, a distribution effect of the tin-containing phases in the nanostructured silicon matrix compared to the results obtained for planar structures at the same deposition temperatures. The amount and distribution of tin-containing phases can be effectively varied and controlled by adjusting the geometric parameters (pore diameter and length) of the initial matrix of nanostructured silicon. Due to the occurrence of intense interactions between precursor molecules and decomposition by-products in the nanocapillary, as a consequence of random thermal motion of molecules in the nanocapillary, which leads to additional kinetic energy and formation of reducing agents, resulting in effective reduction of tin-based compounds to a metallic tin state for molecules with the highest penetration depth in the nanostructured silicon matrix. This effect will enable clear control of the phase distributions of functional materials in 3D matrices for a wide range of applications.
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Affiliation(s)
- Poting Liu
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
- Friedrich Schiller University Jena, Helmholtzweg 4, 07743, Jena, Germany
| | - Alexander Schleusener
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
- Friedrich Schiller University Jena, Helmholtzweg 4, 07743, Jena, Germany
- Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Gabriel Zieger
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
| | - Arne Bochmann
- Ernst Abbe University of Applied Science, Carl-Zeiss-Promenade 2, 07745, Jena, Germany
| | | | - Vladimir Sivakov
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
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5
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Peverini F, Bizzarri M, Boscardin M, Calcagnile L, Caprai M, Caricato AP, Cirrone GAP, Crivellari M, Cuttone G, Dunand S, Fanò L, Gianfelici B, Hammad O, Ionica M, Kanxheri K, Large M, Maruccio G, Menichelli M, Monteduro AG, Moscatelli F, Morozzi A, Pallotta S, Papi A, Passeri D, Petasecca M, Petringa G, Pis I, Quarta G, Rizzato S, Rossi A, Rossi G, Scorzoni A, Soncini C, Servoli L, Tacchi S, Talamonti C, Verzellesi G, Wyrsch N, Zema N, Pedio M. High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3466. [PMID: 36234601 PMCID: PMC9565300 DOI: 10.3390/nano12193466] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 09/20/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defective material. However, by hydrogenation it is possible to reduce the density of the defect by several orders of magnitude, using hydrogenation and this will allow its usage in radiation detector devices. The investigation of the damage induced by exposure to high energy irradiation and its microscopic origin is fundamental since the amount of defects determine the electronic properties of the a-Si:H. The comparison of the spectroscopic results on bare and irradiated samples shows an increased degree of disorder and a strong reduction of the Si-H bonds after irradiation. After annealing we observe a partial recovering of the Si-H bonds, reducing the disorder in the Si (possibly due to the lowering of the radiation-induced dangling bonds). Moreover, effects in the uppermost coating are also observed by spectroscopies.
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Affiliation(s)
- Francesca Peverini
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Marco Bizzarri
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Maurizio Boscardin
- INFN (Istituto Nazionale di Fisica Nucleare), TIPFA (Trento Institute for Fundamental Physics and Applications), Via Sommarive 14, 38123 Trento, Italy
- Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento, Italy
| | - Lucio Calcagnile
- CEDAD-Centro di Fisica Applicata, Datazione e Diagnostica, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento e INFN-Sezione di Lecce, 73100 Lecce, Italy
| | - Mirco Caprai
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Anna Paola Caricato
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica e Matematica dell’Università del Salento, Via per Arnesano, 73100 Lecce, Italy
| | | | | | - Giacomo Cuttone
- INFN (Istituto Nazionale di Fisica Nucleare) Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania, Italy
| | - Sylvain Dunand
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering (IME), Rue de la Maladière 71b, 2000 Neuchâtel, Switzerland
| | - Livio Fanò
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Benedetta Gianfelici
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Omar Hammad
- Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento, Italy
| | - Maria Ionica
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Keida Kanxheri
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Matthew Large
- Centre for Medical Radiation Physics, University of Wollongong, Northfields Ave, Wollongong, NSW 2522, Australia
| | - Giuseppe Maruccio
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica e Matematica dell’Università del Salento, Via per Arnesano, 73100 Lecce, Italy
| | - Mauro Menichelli
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Anna Grazia Monteduro
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica e Matematica dell’Università del Salento, Via per Arnesano, 73100 Lecce, Italy
| | - Francesco Moscatelli
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Istituto Officina dei Materiali-CNR, Basovizza SS-14, km 163.5, 34012 Trieste, Italy
| | - Arianna Morozzi
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Stefania Pallotta
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica Scienze Biomediche Sperimentali e Cliniche “Mario Serio”, Viale Morgagni 50, 50135 Firenze, Italy
| | - Andrea Papi
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Daniele Passeri
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Ingegneria, Università Degli Studi di Perugia, via G.Duranti, 06125 Perugia, Italy
| | - Marco Petasecca
- Centre for Medical Radiation Physics, University of Wollongong, Northfields Ave, Wollongong, NSW 2522, Australia
| | - Giada Petringa
- INFN (Istituto Nazionale di Fisica Nucleare) Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania, Italy
| | - Igor Pis
- IOM-CNR, Istituto Officina dei Materiali, AREA Science Park Basovizza, 34149 Trieste, Italy
| | - Gianluca Quarta
- CEDAD-Centro di Fisica Applicata, Datazione e Diagnostica, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento e INFN-Sezione di Lecce, 73100 Lecce, Italy
| | - Silvia Rizzato
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica e Matematica dell’Università del Salento, Via per Arnesano, 73100 Lecce, Italy
| | - Alessandro Rossi
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Giulia Rossi
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Andrea Scorzoni
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Ingegneria, Università Degli Studi di Perugia, via G.Duranti, 06125 Perugia, Italy
| | - Cristian Soncini
- Istituto Officina dei Materiali-CNR, Basovizza SS-14, km 163.5, 34012 Trieste, Italy
| | - Leonello Servoli
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Silvia Tacchi
- Istituto Officina dei Materiali-CNR, Basovizza SS-14, km 163.5, 34012 Trieste, Italy
| | - Cinzia Talamonti
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica Scienze Biomediche Sperimentali e Cliniche “Mario Serio”, Viale Morgagni 50, 50135 Firenze, Italy
| | - Giovanni Verzellesi
- INFN (Istituto Nazionale di Fisica Nucleare), TIPFA (Trento Institute for Fundamental Physics and Applications), Via Sommarive 14, 38123 Trento, Italy
- Dipartimento di Scienze e Metodi dell’Ingegneria, Università di Modena e Reggio Emilia, Via Amendola 2, 42122 Reggio Emilia, Italy
| | - Nicolas Wyrsch
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering (IME), Rue de la Maladière 71b, 2000 Neuchâtel, Switzerland
| | - Nicola Zema
- Istituto di Struttura della Materia-CNR, Via Fosso del Cavaliere 100, 00133 Roma, Italy
| | - Maddalena Pedio
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Istituto Officina dei Materiali-CNR, Via Pascoli s.n.c., 06123 Perugia, Italy
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Ming T, Turishchev S, Schleusener A, Parinova E, Koyuda D, Chuvenkova O, Schulz M, Dietzek B, Sivakov V. Silicon Suboxides as Driving Force for Efficient Light-Enhanced Hydrogen Generation on Silicon Nanowires. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2007650. [PMID: 33522106 DOI: 10.1002/smll.202007650] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2020] [Revised: 12/29/2020] [Indexed: 06/12/2023]
Abstract
Efficient light-stimulated hydrogen generation from top-down produced highly doped n-type silicon nanowires (SiNWs) with silver nanoparticles (AgNPs) in water-containing medium under white light irradiation is reported. It is observed that SiNWs with AgNPs generate at least 2.5 times more hydrogen than SiNWs without AgNPs. The authors' results, based on vibrational, UV-vis, and X-ray spectroscopy studies, strongly suggest that the sidewalls of the SiNWs are covered by silicon suboxides, by up to a thickness of 120 nm, with wide bandgap semiconductor properties that are similar to those of titanium dioxide and remain stable during hydrogen evolution in a water-containing medium for at least 3 h of irradiation. Based on synchrotron studies, it is found that the increase in the silicon bandgap is related to the energetically beneficial position of the valence band in nanostructured silicon, which renders these promising structures for efficient hydrogen generation.
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Affiliation(s)
- Tingsen Ming
- Leibniz Institute of Photonic Technology, Albert Einstein Str. 9, Jena, 07745, Germany
- Friedrich Schiller University Jena, Helmholtzweg 4, Jena, 07743, Germany
| | - Sergey Turishchev
- Joint Laboratory Electronic Structure of Solids, Voronezh State University, Universitetskaya pl.1, Voronezh, 394018, Russia
| | - Alexander Schleusener
- Leibniz Institute of Photonic Technology, Albert Einstein Str. 9, Jena, 07745, Germany
- Friedrich Schiller University Jena, Helmholtzweg 4, Jena, 07743, Germany
| | - Elena Parinova
- Joint Laboratory Electronic Structure of Solids, Voronezh State University, Universitetskaya pl.1, Voronezh, 394018, Russia
| | - Dmitry Koyuda
- Joint Laboratory Electronic Structure of Solids, Voronezh State University, Universitetskaya pl.1, Voronezh, 394018, Russia
| | - Olga Chuvenkova
- Joint Laboratory Electronic Structure of Solids, Voronezh State University, Universitetskaya pl.1, Voronezh, 394018, Russia
| | - Martin Schulz
- Friedrich Schiller University Jena, Helmholtzweg 4, Jena, 07743, Germany
| | - Benjamin Dietzek
- Leibniz Institute of Photonic Technology, Albert Einstein Str. 9, Jena, 07745, Germany
- Friedrich Schiller University Jena, Helmholtzweg 4, Jena, 07743, Germany
- Center of Energy and Environment Chemistry Jena (CEEC Jena), Philosophenweg 7a, Jena, 07743, Germany
| | - Vladimir Sivakov
- Leibniz Institute of Photonic Technology, Albert Einstein Str. 9, Jena, 07745, Germany
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7
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Engineering Porous Silicon Nanowires with Tuneable Electronic Properties. CONDENSED MATTER 2020. [DOI: 10.3390/condmat5040057] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Structural and electronic properties of silicon nanowires with pre-designed structures are investigated. Wires with distinct structure were investigated via advanced spectroscopic techniques such as X-ray absorption spectroscopy and Raman scattering as well as transport measurements. We show that wire structures can be engineered with metal assisted etching fabrication process via the catalytic solution ratios as well as changing doping type and level. In this way unique well-defined electronic configurations and density of states are obtained in the synthesized wires leading to different charge carrier and phonon dynamics in addition to photoluminescence modulations. We demonstrate that the electronic properties of these structures depend by the final geometry of these systems as determined by the synthesis process. These wires are characterized by a large internal surface and a modulated DOS with a significantly high number of surface states within the band structure. The results improve the understanding of the different electronic structures of these semiconducting nanowires opening new possibilities of future advanced device designs.
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