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Cho FH, Park J, Oh S, Yu J, Jeong Y, Colazzo L, Spree L, Hommel C, Ardavan A, Boero G, Donati F. A continuous-wave and pulsed X-band electron spin resonance spectrometer operating in ultra-high vacuum for the study of low dimensional spin ensembles. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2024; 95:063904. [PMID: 38864723 DOI: 10.1063/5.0189974] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Accepted: 05/09/2024] [Indexed: 06/13/2024]
Abstract
We report the development of a continuous-wave and pulsed X-band electron spin resonance (ESR) spectrometer for the study of spins on ordered surfaces down to cryogenic temperatures. The spectrometer operates in ultra-high vacuum and utilizes a half-wavelength microstrip line resonator realized using epitaxially grown copper films on single crystal Al2O3 substrates. The one-dimensional microstrip line resonator exhibits a quality factor of more than 200 at room temperature, close to the upper limit determined by radiation losses. The surface characterizations of the copper strip of the resonator by atomic force microscopy, low-energy electron diffraction, and scanning tunneling microscopy show that the surface is atomically clean, flat, and single crystalline. Measuring the ESR spectrum at 15 K from a few nm thick molecular film of YPc2, we find a continuous-wave ESR sensitivity of 2.6 × 1011 spins/G · Hz1/2, indicating that a signal-to-noise ratio of 3.9 G · Hz1/2 is expected from a monolayer of YPc2 molecules. Advanced pulsed ESR experimental capabilities, including dynamical decoupling and electron-nuclear double resonance, are demonstrated using free radicals diluted in a glassy matrix.
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Affiliation(s)
- Franklin H Cho
- Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, South Korea
- Ewha Womans University, Seoul 03760, South Korea
| | - Juyoung Park
- Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, South Korea
- Department of Physics, Ewha Womans University, Seoul 03760, South Korea
| | - Soyoung Oh
- Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, South Korea
- Department of Physics, Ewha Womans University, Seoul 03760, South Korea
| | - Jisoo Yu
- Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, South Korea
- Department of Physics, Ewha Womans University, Seoul 03760, South Korea
| | - Yejin Jeong
- Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, South Korea
- Department of Physics, Ewha Womans University, Seoul 03760, South Korea
| | - Luciano Colazzo
- Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, South Korea
- Ewha Womans University, Seoul 03760, South Korea
| | - Lukas Spree
- Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, South Korea
- Ewha Womans University, Seoul 03760, South Korea
| | - Caroline Hommel
- Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, South Korea
- Ewha Womans University, Seoul 03760, South Korea
| | - Arzhang Ardavan
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, United Kingdom
| | - Giovanni Boero
- Microsystems Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland
| | - Fabio Donati
- Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, South Korea
- Department of Physics, Ewha Womans University, Seoul 03760, South Korea
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2
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Rumsby P, Baloukas B, Zabeida O, Martinu L. Enhanced Durability and Antireflective Performance of Ag-Based Transparent Conductors Achieved via Controlled N-Doping. ACS APPLIED MATERIALS & INTERFACES 2024; 16. [PMID: 38676639 PMCID: PMC11086335 DOI: 10.1021/acsami.4c02255] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2024] [Revised: 03/30/2024] [Accepted: 04/18/2024] [Indexed: 04/29/2024]
Abstract
Ag-based transparent conductors (TCs) are often proposed as an alternative to ITO coatings. However, while their performance has been widely demonstrated, their environmental durability is frequently overlooked or addressed with the use of highly specific encapsulating layers. In this work, the durability and antireflective performance of Ag-based TCs are simultaneously enhanced. To do so, a transfer matrix modeling approach is used to determine the general requirements for high performance antireflective properties as a function of Ag thickness and dielectric refractive indices, offering more widely applicable insight into stack optimization. Coating durability is investigated as a function of the Ag microstructure, which is modified by altering the N2 concentration used for doping of the Ag layer and the selection of the seed layer. Increasing N2 concentration during Ag deposition was found to decrease grain size and durability of Ag coatings deposited on Si3N4 whereas all coatings on ZnO(Al) showed higher stability. Significantly higher durability is found when specifically combining intermediate N2 concentrations in the sputtering gas mixture (Ag(N):5%, compared to 0% and 50%) and a ZnO(Al) seed layer, and a mechanism accounting for this increased durability is proposed. The addition of NiCrNx protective coatings increases the system durability without altering these trends. These findings are combined to fabricate a highly performant Ag-based TC (TV = 89.2%, RVFS = 0.23%, 21.4 Ω), which shows minimal property changes following corrosion testing by immersion in a heated and highly concentrated aqueous NaCl solution (200 g/L, 50 °C).
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Affiliation(s)
- Phillip Rumsby
- Department of Engineering
Physics, Polytechnique Montreal, Montreal, QC H3T 1J7, Canada
| | - Bill Baloukas
- Department of Engineering
Physics, Polytechnique Montreal, Montreal, QC H3T 1J7, Canada
| | - Oleg Zabeida
- Department of Engineering
Physics, Polytechnique Montreal, Montreal, QC H3T 1J7, Canada
| | - Ludvik Martinu
- Department of Engineering
Physics, Polytechnique Montreal, Montreal, QC H3T 1J7, Canada
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3
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Zikiy EV, Ivanov AI, Smirnov NS, Moskalev DO, Polozov VI, Matanin AR, Malevannaya EI, Echeistov VV, Konstantinova TG, Rodionov IA. High-Q trenched aluminum coplanar resonators with an ultrasonic edge microcutting for superconducting quantum devices. Sci Rep 2023; 13:15536. [PMID: 37730848 PMCID: PMC10511541 DOI: 10.1038/s41598-023-42332-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Accepted: 09/08/2023] [Indexed: 09/22/2023] Open
Abstract
Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. The impact of materials and fabrication steps on dielectric losses can be evaluated using coplanar waveguide (CPW) microwave resonators. Here, we report on superconducting CPW microwave resonators with internal quality factors systematically exceeding 5 × 106 at high powers and 2 × 106 (with the best value of 4.4 × 106) at low power. Such performance is demonstrated for 100-nm-thick aluminum resonators with 7-10.5 um center trace on high-resistivity silicon substrates commonly used in Josephson-junction based quantum circuit. We investigate internal quality factors of the resonators with both dry and wet aluminum etching, as well as deep and isotropic reactive ion etching of silicon substrate. Josephson junction compatible CPW resonators fabrication process with both airbridges and silicon substrate etching is proposed. Finally, we demonstrate the effect of airbridges' positions and extra process steps on the overall dielectric losses. The best quality factors are obtained for the wet etched aluminum resonators and isotropically removed substrate with the proposed ultrasonic metal edge microcutting.
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Affiliation(s)
- E V Zikiy
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow, 127055, Russia
| | - A I Ivanov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow, 127055, Russia
| | - N S Smirnov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow, 127055, Russia
| | - D O Moskalev
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow, 127055, Russia
| | - V I Polozov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - A R Matanin
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow, 127055, Russia
| | - E I Malevannaya
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - V V Echeistov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - T G Konstantinova
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - I A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia.
- Dukhov Automatics Research Institute (VNIIA), Moscow, 127055, Russia.
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4
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Tarasov M, Lomov A, Chekushkin A, Fominsky M, Zakharov D, Tatarintsev A, Kraevsky S, Shadrin A. Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2002. [PMID: 37446518 DOI: 10.3390/nano13132002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Revised: 06/30/2023] [Accepted: 07/01/2023] [Indexed: 07/15/2023]
Abstract
In this paper, we develop fabrication technology and study aluminum films intended for superconducting quantum nanoelectronics using AFM, SEM, XRD, HRXRR. Two-temperature-step quasiepitaxial growth of Al on (111) Si substrate provides a preferentially (111)-oriented Al polycrystalline film and reduces outgrowth bumps, peak-to-peak roughness from 70 to 10 nm, and texture coefficient from 3.5 to 1.7, while increasing hardness from 5.4 to 16 GPa. Future progress in superconducting current density, stray capacitance, relaxation time, and noise requires a reduction in structural defect density and surface imperfections, which can be achieved by improving film quality using such quasiepitaxial growth techniques.
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Affiliation(s)
- Mikhail Tarasov
- V. Kotelnikov Institute of Radio Engineering and Electronics, Moscow 125009, Russia
| | - Andrey Lomov
- Valiev Institute of Physics and Technology, Moscow 117218, Russia
| | - Artem Chekushkin
- V. Kotelnikov Institute of Radio Engineering and Electronics, Moscow 125009, Russia
| | - Mikhail Fominsky
- V. Kotelnikov Institute of Radio Engineering and Electronics, Moscow 125009, Russia
| | - Denis Zakharov
- Valiev Institute of Physics and Technology, Moscow 117218, Russia
| | | | - Sergey Kraevsky
- V. Orekhovich Institute of Biomedical Chemistry, Moscow 119435, Russia
| | - Anton Shadrin
- Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia
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5
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Pishchimova AA, Smirnov NS, Ezenkova DA, Krivko EA, Zikiy EV, Moskalev DO, Ivanov AI, Korshakov ND, Rodionov IA. Improving Josephson junction reproducibility for superconducting quantum circuits: junction area fluctuation. Sci Rep 2023; 13:6772. [PMID: 37185459 PMCID: PMC10130087 DOI: 10.1038/s41598-023-34051-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Accepted: 04/23/2023] [Indexed: 05/17/2023] Open
Abstract
Josephson superconducting qubits and parametric amplifiers are prominent examples of superconducting quantum circuits that have shown rapid progress in recent years. As such devices become more complex, the requirements for reproducibility of their electrical properties across a chip are being tightened. Critical current of the Josephson junction Ic is the essential electrical parameter in a chip. So, its variation is to be minimized. According to the Ambegaokar-Baratoff formula, critical current is related to normal-state resistance, which can be measured at room temperature. In this study, we focused on the dominant source of non-uniformity for the Josephson junction critical current-junction area variation. We optimized Josephson junction fabrication process and demonstrated resistance variation of 9.8-4.4% and 4.8-2.3% across 22 × 22 mm2 and 5 × 10 mm2 chip areas, respectively. For a wide range of junction areas from 0.008 to 0.12 μm2, we ensure a small linewidth standard deviation of 4 nm measured over 4500 junctions with linear dimensions from 80 to 680 nm. We found that the dominate source of junction area variation limiting [Formula: see text] reproducibility is the imperfection of the evaporation system. The developed fabrication process was tested on superconducting highly coherent transmon qubits (T1 > 100 μs) and a nonlinear asymmetric inductive element parametric amplifier.
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Affiliation(s)
- Anastasiya A Pishchimova
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
- Dukhov Automatics Research Institute, VNIIA, Moscow, 127030, Russia
| | - Nikita S Smirnov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - Daria A Ezenkova
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - Elizaveta A Krivko
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - Evgeniy V Zikiy
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - Dmitry O Moskalev
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - Anton I Ivanov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - Nikita D Korshakov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - Ilya A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia.
- Dukhov Automatics Research Institute, VNIIA, Moscow, 127030, Russia.
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6
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Kulikova DP, Sgibnev YM, Yankovskii GM, Chubchev ED, Lotkov ES, Ezenkova DA, Dobronosova AA, Baburin AS, Rodionov IA, Nechepurenko IA, Baryshev AV, Dorofeenko AV. Optical hydrogen sensing with high-Q guided-mode resonance of Al 2O 3/WO 3/Pd nanostructure. Sci Rep 2023; 13:890. [PMID: 36650224 PMCID: PMC9845354 DOI: 10.1038/s41598-023-28204-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Accepted: 01/13/2023] [Indexed: 01/18/2023] Open
Abstract
Nanostructure based on a dielectric grating (Al2O3), gasochromic oxide (WO3) and catalyst (Pd) is proposed as a hydrogen sensor working at the room temperature. In the fabricated structure, the Pd catalyst film was as thin as 1 nm that allowed a significant decrease in the optical absorption. A high-Q guided-mode resonance was observed in a transmission spectrum at normal incidence and was utilized for hydrogen detection. The spectra were measured at 0-0.12% of hydrogen in a synthetic air (≈ 80% [Formula: see text] and 20% [Formula: see text]). The detection limit below 100 ppm of hydrogen was demonstrated. Hydrogen was detected in the presence of oxygen, which provides the sensor recovery but suppresses the sensor response. Sensor response was treated by the principal component analysis (PCA), which effectively performs noise averaging. Influence of temperature and humidity was measured and processed by PCA, and elimination of the humidity and temperature effects was performed. Square root dependence of the sensor response on the hydrogen concentration (Sievert's law) was observed. Sensor calibration curve was built, and the sensor resolution of 40 ppm was found. Long term stability of the sensor was investigated. Particularly, it was shown that the sensor retains its functionality after 6 months and dozens of acts of response to gas.
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Affiliation(s)
- Daria P. Kulikova
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia ,grid.14476.300000 0001 2342 9668Faculty of Physics, Lomonosov Moscow State University, Moscow, Russia
| | - Yevgeniy M. Sgibnev
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia
| | - Georgiy M. Yankovskii
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia
| | - Eugeny D. Chubchev
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia
| | - Evgeniy S. Lotkov
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia ,grid.61569.3d0000 0001 0405 5955FMN Laboratory, Bauman Moscow State Technical University, Moscow, Russia
| | - Daria A. Ezenkova
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia ,grid.61569.3d0000 0001 0405 5955FMN Laboratory, Bauman Moscow State Technical University, Moscow, Russia
| | - Alina A. Dobronosova
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia ,grid.61569.3d0000 0001 0405 5955FMN Laboratory, Bauman Moscow State Technical University, Moscow, Russia
| | - Aleksandr S. Baburin
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia ,grid.61569.3d0000 0001 0405 5955FMN Laboratory, Bauman Moscow State Technical University, Moscow, Russia
| | - Ilya A. Rodionov
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia ,grid.61569.3d0000 0001 0405 5955FMN Laboratory, Bauman Moscow State Technical University, Moscow, Russia
| | - Igor A. Nechepurenko
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia ,grid.4886.20000 0001 2192 9124Kotelnikov Institute of Radioengineering and Electronics RAS, Moscow, Russia ,grid.18763.3b0000000092721542Moscow Institute of Physics and Technology, Dolgoprudny, Moscow, Russia
| | - Alexander V. Baryshev
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia
| | - Alexander V. Dorofeenko
- grid.472660.10000 0004 0544 1518Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia ,grid.18763.3b0000000092721542Moscow Institute of Physics and Technology, Dolgoprudny, Moscow, Russia ,grid.473298.3Institute for Theoretical and Applied Electromagnetics RAS, Moscow, Russia
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7
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Xu X, Solanki AB, Sychev D, Gao X, Peana S, Baburin AS, Pagadala K, Martin ZO, Chowdhury SN, Chen YP, Taniguchi T, Watanabe K, Rodionov IA, Kildishev AV, Li T, Upadhyaya P, Boltasseva A, Shalaev VM. Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nanocavity. NANO LETTERS 2023; 23:25-33. [PMID: 36383034 DOI: 10.1021/acs.nanolett.2c03100] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The negatively charged boron vacancy (VB-) defect in hexagonal boron nitride (hBN) with optically addressable spin states has emerged due to its potential use in quantum sensing. Remarkably, VB- preserves its spin coherence when it is implanted at nanometer-scale distances from the hBN surface, potentially enabling ultrathin quantum sensors. However, its low quantum efficiency hinders its practical applications. Studies have reported improving the overall quantum efficiency of VB- defects with plasmonics; however, the overall enhancements of up to 17 times reported to date are relatively modest. Here, we demonstrate much higher emission enhancements of VB- with low-loss nanopatch antennas (NPAs). An overall intensity enhancement of up to 250 times is observed, corresponding to an actual emission enhancement of ∼1685 times by the NPA, along with preserved optically detected magnetic resonance contrast. Our results establish NPA-coupled VB- defects as high-resolution magnetic field sensors and provide a promising approach to obtaining single VB- defects.
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Affiliation(s)
- Xiaohui Xu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
| | - Abhishek B Solanki
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Demid Sychev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
| | - Samuel Peana
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Aleksandr S Baburin
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Karthik Pagadala
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Zachariah O Martin
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Sarah N Chowdhury
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Yong P Chen
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, 8000Aarhus-C, Denmark
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai980-8577, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Ilya A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Alexander V Kildishev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Tongcang Li
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Alexandra Boltasseva
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Vladimir M Shalaev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
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8
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Lotkov ES, Baburin AS, Ryzhikov IA, Sorokina OS, Ivanov AI, Zverev AV, Ryzhkov VV, Bykov IV, Baryshev AV, Panfilov YV, Rodionov IA. ITO film stack engineering for low-loss silicon optical modulators. Sci Rep 2022; 12:6321. [PMID: 35428848 PMCID: PMC9012746 DOI: 10.1038/s41598-022-09973-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2021] [Accepted: 03/21/2022] [Indexed: 11/17/2022] Open
Abstract
The Indium Tin Oxide (ITO) platform is one of the promising solutions for state-of-the-art integrated optical modulators towards low-loss silicon photonics applications. One of the key challenges on this way is to optimize ITO-based thin films stacks for electro-optic modulators with both high extinction ratio and low insertion loss. In this paper we demonstrate the e-beam evaporation technology of 20 nm-thick ITO films with low extinction coefficient of 0.14 (Nc = 3.7·1020 cm−3) at 1550 nm wavelength and wide range of carrier concentrations (from 1 to 10 × 1020 cm−3). We investigate ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure to achieve the desired optical and electrical parameters. Here we report the mechanism of oxygen migration in ITO film crystallization based on observed morphological features under low-energy growth conditions. Finally, we experimentally compare the current–voltage and optical characteristics of three electro-optic active elements based on ITO film stacks and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550 nm under ± 16 V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-dB losses.
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Affiliation(s)
- Evgeniy S Lotkov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia. .,Dukhov Automatics Research Institute, (VNIIA), Moscow, 127055, Russia.
| | - Aleksandr S Baburin
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia.,Dukhov Automatics Research Institute, (VNIIA), Moscow, 127055, Russia
| | - Ilya A Ryzhikov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia.,Institute for Theoretical and Applied Electromagnetics RAS, Moscow, 125412, Russia
| | - Olga S Sorokina
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia.,Dukhov Automatics Research Institute, (VNIIA), Moscow, 127055, Russia
| | - Anton I Ivanov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia.,Dukhov Automatics Research Institute, (VNIIA), Moscow, 127055, Russia
| | - Alexander V Zverev
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia.,Dukhov Automatics Research Institute, (VNIIA), Moscow, 127055, Russia
| | - Vitaly V Ryzhkov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - Igor V Bykov
- Institute for Theoretical and Applied Electromagnetics RAS, Moscow, 125412, Russia
| | | | - Yuri V Panfilov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia
| | - Ilya A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia.,Dukhov Automatics Research Institute, (VNIIA), Moscow, 127055, Russia
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9
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Schörner C, Lippitz M. High-Q plasmonic nanowire-on-mirror resonators by atomically smooth single-crystalline silver flakes. J Chem Phys 2021; 155:234202. [PMID: 34937368 DOI: 10.1063/5.0074387] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Plasmonic nanoparticles in close vicinity to a metal surface confine light to nanoscale volumes within the insulating gap. With gap sizes in the range of a few nanometers or below, atomic-scale dynamical phenomena within the nanogap come into reach. However, at these tiny scales, an ultra-smooth material is a crucial requirement. Here, we demonstrate large-scale (50 μm) single-crystalline silver flakes with a truly atomically smooth surface, which are an ideal platform for vertically assembled silver plasmonic nanoresonators. We investigate crystalline silver nanowires in a sub-2 nm separation to the silver surface and observe narrow plasmonic resonances with a quality factor Q of about 20. We propose a concept toward the observation of the spectral diffusion of the lowest-frequency cavity plasmon resonance and present first measurements. Our study demonstrates the benefit of using purely crystalline silver for plasmonic nanoparticle-on-mirror resonators and further paves the way toward the observation of dynamic phenomena within a nanoscale gap.
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Affiliation(s)
| | - Markus Lippitz
- Experimental Physics III, University of Bayreuth, Bayreuth, Germany
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10
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Cheng YT, Tsao HK, Sheng YJ. Non-affinity adsorption of nanorods onto smooth walls via an entropy driven mechanism. SOFT MATTER 2021; 17:5756-5762. [PMID: 34019063 DOI: 10.1039/d1sm00238d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Preferential adsorption of nanorods onto smooth walls is investigated using dissipative particle dynamics in the absence of specific attraction and a depletant. Although the translational and rotational entropy of nanorods is significantly reduced after adsorption, the effective attraction between the nanorod and wall is clearly identified based on the distribution profile of rods. As the rod length increases, the attractive interaction grows stronger and clusters of aligned nanorods can emerge on the smooth wall. However, the presence of a depletion zone of nanorods adjacent to the adsorbed layer gives zero surface excess. These two regions correspond to the primary minimum and maximum mean force potentials observed. Since adsorbed nanorods lose their rotational and translational entropy, the strong adsorption of long nanorods has to be attributed to the entropy gain associated with the increase in free volume for the solvent in this athermal system. Nonetheless, as the surface roughness is present, entropy-driven attraction is lessened, similar to the depletion force between colloids.
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Affiliation(s)
- Yi-Ting Cheng
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China.
| | - Heng-Kwong Tsao
- Department of Chemical and Materials Engineering, National Central University, Taoyuan 32001, Taiwan, Republic of China.
| | - Yu-Jane Sheng
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China.
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11
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Abstract
Nanoparticles and biological molecules high throughput robust separation is of significant interest in many healthcare and nanoscience industrial applications. In this work, we report an on-chip automatic efficient separation and preconcentration method of dissimilar sized particles within a microfluidic platform using integrated membrane valves controlled microfiltration. Micro-sized E. coli bacteria are sorted from nanoparticles and preconcentrated on a microfluidic chip with six integrated pneumatic valves (sub-100 nL dead volume) using hydrophilic PVDF filter with 0.45 μm pore diameter. The proposed on-chip automatic sorting sequence includes a sample filtration, dead volume washout and retentate backflush in reverse flow. We showed that pulse backflush mode and volume control can dramatically increase microparticles sorting and preconcentration efficiency. We demonstrate that at the optimal pulse backflush regime a separation efficiency of E. coli cells up to 81.33% at a separation throughput of 120.45 μL/min can be achieved. A trimmed mode when the backflush volume is twice smaller than the initial sample results in a preconcentration efficiency of E. coli cells up to 121.96% at a throughput of 80.93 μL/min. Finally, we propose a cyclic on-chip preconcentration method which demonstrates E. coli cells preconcentration efficiency of 536% at a throughput of 1.98 μL/min and 294% preconcentration efficiency at a 10.9 μL/min throughput.
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12
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Ivanov BI, Volkhin DI, Novikov IL, Pitsun DK, Moskalev DO, Rodionov IA, Il’ichev E, Vostretsov AG. A wideband cryogenic microwave low-noise amplifier. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2020; 11:1484-1491. [PMID: 33083196 PMCID: PMC7537378 DOI: 10.3762/bjnano.11.131] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2020] [Accepted: 08/31/2020] [Indexed: 06/11/2023]
Abstract
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
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Affiliation(s)
- Boris I Ivanov
- Novosibirsk State Technical University, K.Marx-Av.20, Novosibirsk, 630073, Russia
| | - Dmitri I Volkhin
- Novosibirsk State Technical University, K.Marx-Av.20, Novosibirsk, 630073, Russia
| | - Ilya L Novikov
- Novosibirsk State Technical University, K.Marx-Av.20, Novosibirsk, 630073, Russia
| | - Dmitri K Pitsun
- Novosibirsk State Technical University, K.Marx-Av.20, Novosibirsk, 630073, Russia
| | - Dmitri O Moskalev
- FMN Laboratory, Bauman Moscow State Technical University, 2-nd Baumanskaya str. 5, Moscow, 105005, Russia
- Dukhov Automatics Research Institute, (VNIIA), 22 ul. Sushchevskaya, Moscow, Russia, 127055
| | - Ilya A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, 2-nd Baumanskaya str. 5, Moscow, 105005, Russia
- Dukhov Automatics Research Institute, (VNIIA), 22 ul. Sushchevskaya, Moscow, Russia, 127055
| | - Evgeni Il’ichev
- Novosibirsk State Technical University, K.Marx-Av.20, Novosibirsk, 630073, Russia
- Leibniz Institute of Photonic Technology, PO Box 100239, D-07702 Jena, Germany
| | - Aleksey G Vostretsov
- Novosibirsk State Technical University, K.Marx-Av.20, Novosibirsk, 630073, Russia
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13
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Abstract
Silver and gold are the most commonly used materials in optics and plasmonics. Silver has the lowest optical losses in the visible and near-infrared wavelength range, but it faces a serious problem—degradation over time. It has been repeatedly reported that the optical properties of silver thin films rapidly degrade when exposed to the atmosphere. This phenomenon was described by various mechanisms: rapid silver oxidation, sorption of sulfur or oxygen, formation of silver compounds with chlorine, sulfur, and oxygen. In this work, we systematically studied single-crystalline silver films from 25 to 70 nm thicknesses for almost two years. The surface morphology, crystalline structure and optical characteristics of the silver films were measured using spectroscopic ellipsometry, ultra-high-resolution scanning electron microscopy, and stylus profilometry under standard laboratory conditions. After 19 months, bulk structures appeared on the surface of thin films. These structures are associated with relaxation of internal stresses combined with dewetting. Single-crystalline silver films deposited using the single-crystalline continuous ultra-smooth, low-loss, low-cost (SCULL) technology with a thickness of 35–50 nm demonstrated the best stability in terms of degradation. We have shown that the number of defects (grain boundaries and joints of terraces) is one of the key factors that influence the degradation intensity of silver films.
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14
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Raja SS, Cheng CW, Sang Y, Chen CA, Zhang XQ, Dubey A, Yen TJ, Chang YM, Lee YH, Gwo S. Epitaxial Aluminum Surface-Enhanced Raman Spectroscopy Substrates for Large-Scale 2D Material Characterization. ACS NANO 2020; 14:8838-8845. [PMID: 32589398 DOI: 10.1021/acsnano.0c03462] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Surface-enhanced Raman spectroscopy (SERS) is an ultrasensitive technique to identify vibrational fingerprints of trace analytes. However, present SERS techniques suffer from the lack of uniform, reproducible, and stable substrates to control the plasmonic hotspots in a wide spectral range. Here, we report the promising application of epitaxial aluminum films as a scalable plasmonic platform for SERS applications. To assess the uniformity of aluminum substrates, atomically thin transition metal dichalcogenide monolayers are used as the benchmark analyte due to their inherent two-dimensional homogeneity. Besides the distinctive spectral capability of aluminum in the ultraviolet (325 nm), we demonstrate that the aluminum substrates can even perform comparably with the silver counterparts made from single-crystalline colloidal silver crystals using the same SERS substrate design in the visible range (532 nm). This is unexpected from the prediction solely based on optical dielectric functions and illustrate the superior surface and interface properties of epitaxial aluminum SERS substrates.
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Affiliation(s)
- Soniya S Raja
- Institute of Nanoengineering and Microsystems, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Chang-Wei Cheng
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Yungang Sang
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
- School of Physics, Peking University, Beijing 100871, China
| | - Chun-An Chen
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Xin-Quan Zhang
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Abhishek Dubey
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Ta-Jen Yen
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Yu-Ming Chang
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Yi-Hsien Lee
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Shangjr Gwo
- Institute of Nanoengineering and Microsystems, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Center for Applied Sciences, Academia Sinica, Nankang, Taipei 11529, Taiwan
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15
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Schörner C, Lippitz M. Single Molecule Nonlinearity in a Plasmonic Waveguide. NANO LETTERS 2020; 20:2152-2156. [PMID: 32077703 DOI: 10.1021/acs.nanolett.0c00196] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Plasmonic waveguides offer the unique possibility to confine light far below the diffraction limit. Past room temperature experiments focused on efficient generation of single waveguide plasmons by a quantum emitter. However, only the simultaneous interaction of the emitter with multiple plasmonic fields would lead to functionality in a plasmonic circuit. Here, we demonstrate the nonlinear optical interaction of a single molecule and propagating plasmons. An individual terrylene diimide (TDI) molecule is placed in the nanogap between two single-crystalline silver nanowires. A visible wavelength pump pulse and a red-shifted depletion pulse travel along the waveguide, leading to stimulated emission depletion (STED) in the observed fluorescence. The efficiency increases by up to a factor of 50 compared to far-field excitation. Our study thus demonstrates remote nonlinear four-wave mixing at a single molecule with propagating plasmons. It paves the way toward functional quantum plasmonic circuits and improved nonlinear single-molecule spectroscopy.
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Affiliation(s)
- Christian Schörner
- Experimental Physics III, University of Bayreuth, Bayreuth, Germany D-95447
| | - Markus Lippitz
- Experimental Physics III, University of Bayreuth, Bayreuth, Germany D-95447
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