Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering

Colloidal Titanium Nitride Nanoparticles by Laser Ablation in Solvents for Plasmonic Applications

Titanium nitride (TiN) is a candidate material for several plasmonic applications, and pulsed laser ablation in liquids (PLAL) represents a rapid, scalable, and environmentally friendly approach for the large-scale production of nanomaterials with customized properties. In this work, the nanosecond PLAL process is developed, and we provide a concise understanding of the process parameters, such as the solvent and the laser fluence and pulse wavelength, to the size and structure of the produced TiN nanoparticles (NPs). TiN films of a 0.6 μm thickness developed by direct-current (DC) magnetron sputtering were used as the ablation targets. All laser process parameters lead to the fabrication of spherical NPs, while the laser pulse fluence was used to control the NPs' size. High laser pulse fluence values result in larger TiN NPs (diameter around 42 nm for 5 mJ and 25 nm for 1 mJ), as measured from scanning electron microscopy (SEM). On the other hand, the wavelength of the laser pulse does not affect the mean size of the TiN NPs (24, 26, and 25 nm for 355, 532, and 1064 nm wavelengths, respectively). However, the wavelength plays a vital role in the quality of the produced TiN NPs. Shorter wavelengths result in NPs with fewer defects, as indicated by Raman spectra and XPS analysis. The solvent type also significantly affects the size of the NPs. In aqueous solutions, strong oxidation of the NPs is evident, while organic solvents such as acetone, carbides, and oxides cover the TiN NPs.

Surface Functionalized Titanium Nitride Electrode for CMOS Compatible Bioelectronic Devices

The development of bioelectronic devices is heading toward high throughput and high resolution. Yet, most electrode materials utilized in electrical biosensing are not compatible with the manufacturing techniques of semiconductor chips, which somehow hinders the integration and miniaturization of these devices. Titanium nitride (TiN) is a durable and economical material that is widely used in CMOS-based integrated circuits, bioelectronic systems, electrocatalytic systems, etc. Considering different application scenarios, new and efficient methods are required to functionalize TiN surface. In this study, a surface functionalization approach by covalent grafting of an organic thin film containing hydroxyl groups on TiN surface via electroreduction of diazonium salt 4-(2-hydroxyethyl)benzenediazonium was presented. Cyclic voltammetry (CV) procedures were carried out at the potential ranges of -0.8 V~0.5 V (vs Ag/AgCl) with varying numbers of potential cycles (i. e., 5, 25, and 50 cycles) in order to study the thickness of modification layer. Then, the electrochemical property, surface morphology, and chemical structures of the sample before and after modifications were investigated via multiple characterization techniques, such as CV, atomic force microscopy (AFM), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS), etc., thereby confirming the successful grafting of hydroxyl groups onto the TiN surface. The experiments on DNA synthesis aimed to explore the potential of modified TiN electrode as a novel platform for DNA data storage applications and the corresponding proof-of-principle was accomplished by the process of coupling Cy3-phosphoramidite. Finally, the experiments were successfully reproduced on the randomly selected sites of the modified TiN microarray chips demonstrating the potential of technical protocol to extend applications in future bioelectronic devices, such as bio-sensing, high-throughput DNA synthesis, and molecular manipulation.

Wrinkled TiNAgNW Nanocomposites for High-Performance Flexible Electrodes on TEMPO-Oxidized Nanocellulose

In this study, we present a novel method for fabricating semi-transparent electrodes by combining silver nanowires (AgNW) with titanium nitride (TiN) layers, resulting in conductive nanocomposite coatings with exceptional electromechanical properties. These nanocomposites were deposited on cellulose nanopaper (CNP) using a plasma-enhanced pulsed laser deposition (PE-PLD) technique at low temperatures (below 200 °C). Repetitive bending tests demonstrate that incorporating AgNW into TiN coatings significantly enhances the microstructure, increasing the electrode's electromechanical robustness by up to four orders of magnitude compared to commercial PET/ITO substrates. Furthermore, the optical and electrical conductivities can be optimized by adjusting the AgNW network density and TiN synthesis temperature. Our results also indicate that the nanocomposite electrodes exhibit improved stability in air and superior adhesion compared to bare AgNW coatings.

Nanomechanical inhomogeneities in CVA-deposited titanium nitride thin films: Nanoindentation and finite element method investigations

Refractory metals that can withstand at high temperatures and harsh conditions are of utmost importance for solar-thermal and energy storage applications. Thin films of TiN have been deposited using cathodic vacuum arc deposition at relatively low temperatures ∼300 °C using the substrate bias ∼ -60 V. The nanomechanical properties of these films were investigated using nanoindentation and the spatial fluctuations were observed. The nanoindentation results were simulated using finite element method through Johnson-Cook model. A parametric study was conducted, and 16 different models were simulated to predict the hardening modulus, hardening exponent, and yield stress of the deposited film. The predicted values of elastic modulus, yield stress, hardening modulus and hardening exponent as 246 GPa, 2500 MPa, 25000 MPa and 0.1 respectively are found to satisfactorily explain the experimental load-indentation curves. We have found the local nitridation plays an important role on nanomechanical properties of TiN thin films and confirms that the nitrogen deficient regions are ductile with low yield stress and hardening modulus. This study further opens the opportunities of modelling the nanoscale system using FEM analysis.

Tuning the plasmonic resonance in TiN refractory metal

Plasmonic coatings can absorb electromagnetic radiation from visible to far-infrared spectrum for the better performance of solar panels and energy saving smart windows. For these applications, it is important for these coatings to be as thin as possible and grown at lower temperatures on arbitrary substrates like glass, silicon, or flexible polymers. Here, we tune and investigate the plasmonic resonance of titanium nitride thin films in lower thicknesses regime varying from ~ 20 to 60 nm. High-quality crystalline thin films of route-mean-square roughness less than ~ 0.5 nm were grown on a glass substrate at temperature of ~ 200 °C with bias voltage of - 60 V using cathodic vacuum arc deposition. A local surface-enhanced-plasmonic-resonance was observed between 400 and 500 nm, which further shows a blueshift in plasmonic frequency in thicker films due to the increase in the carrier mobility. These results were combined with finite-difference-time-domain numerical analysis to understand the role of thicknesses and stoichiometry on the broadening of electromagnetic absorption.

Optimization of the plasmonic properties of titanium nitride films sputtered at room temperature through microstructure and thickness control

A current approach to depositing highly plasmonic titanium nitride films using the magnetron sputtering technique assumes that the process is performed at temperatures high enough to ensure the atoms have sufficient diffusivities to form dense and highly crystalline films. In this work, we demonstrate that the plasmonic properties of TiN films can be efficiently tuned even without intentional substrate heating by influencing the details of the deposition process and entailed films' stoichiometry and microstructure. We also discuss the dependence of the deposition time/films' thickness on the optical properties, which is another degree of freedom in controlling the optical response of the refractory metal nitride films. The proposed strategy allows for robust and cost-effective production of large-scale substrates with good plasmonic properties in a CMOS technology-compatible process that can be further processed, e.g., structurized. All reported films are characterized by the maximal values of the plasmonic Figure of Merit (FoM = - ε1/ε2) ranging from 0.8 to 2.6, and the sample with the best plasmonic properties is characterized by FoM at 700 nm and 1550 nm that is equal 2.1 in both cases. These are outstanding results, considering the films' polycrystallinity and deposition at room temperature onto a non-matched substrate.

A Facile Surface Modification Scheme for Medical-Grade Titanium and Polypropylene Using a Novel Mussel-Inspired Biomimetic Polymer with Cationic Quaternary Ammonium Functionalities for Antibacterial Application

Medical device-associated infection remains a critical problem in the healthcare setting. Different clinical- or device-related methods have been attempted to reduce the infection rate. Among these approaches, creating a surface with bactericidal cationic functionality has been proposed. To do so, a sophisticated multi-step chemical procedure would be needed. Instead, a simple immersion approach was utilized in this investigation to render the titanium and polypropylene surface with the quaternary ammonium functionality by using a mussel-inspired novel lab-synthesized biomimetic catechol-terminated polymer, PQA-C8. The chemical oxidants, CuSO4/H2O2, as well as dopamine, were added into the novel PQA-C8 polymer immersion solution for one-step surface modification. Additionally, a two-step immersion scheme, in which the polypropylene substrate was first immersed in the dopamine solution and then in the PQA-C8 solution, was also attempted. Surface analysis results indicated the surface characteristics of the modified substrates were affected by the immersion solution formulation as well as the procedure utilized. The antibacterial assay has shown the titanium substrates modified by the one-step dopamine + PQA-C8 mixtures with the oxidants added and the polypropylene modified by the two-step scheme exhibited bacterial reduction percentages greater than 90% against both Gram-positive S. aureus and Gram-negative E. coli and these antibacterial substrates were non-cytotoxic.

A nonmetallic plasmonic catalyst for photothermal CO2 flow conversion with high activity, selectivity and durability

The meticulous design of active sites and light absorbers holds the key to the development of high-performance photothermal catalysts for CO2 hydrogenation. Here, we report a nonmetallic plasmonic catalyst of Mo2N/MoO2-x nanosheets by integrating a localized surface plasmon resonance effect with two distinct types of active sites for CO2 hydrogenation. Leveraging the synergism of dual active sites, H2 and CO2 molecules can be simultaneously adsorbed and activated on N atom and O vacancy, respectively. Meanwhile, the plasmonic effect of this noble-metal-free catalyst signifies its promising ability to convert photon energy into localized heat. Consequently, Mo2N/MoO2-x nanosheets exhibit remarkable photothermal catalytic performance in reverse water-gas shift reaction. Under continuous full-spectrum light irradiation (3 W·cm-2) for a duration of 168 h, the nanosheets achieve a CO yield rate of 355 mmol·gcat-1·h-1 in a flow reactor with a selectivity exceeding 99%. This work offers valuable insights into the precise design of noble-metal-free active sites and the development of plasmonic catalysts for reducing carbon footprints.

Synthesis of Plasmonically Active Titanium Nitride Using a Metallic Alloy Buffer Layer Strategy

Titanium nitride (TiN) has emerged as a highly promising alternative to traditional plasmonic materials. This study focuses on the inclusion of a Cr90Ru10 buffer layer between the substrate and thin TiN film, which enables the use of cost-effective, amorphous technical substrates while preserving high film quality. We report best-in-class TiN thin films fabricated on fused silica wafers, achieving a maximum plasmonic figure of merit, -ϵ'/ϵ″, of approximately 2.8, even at a modest wafer temperature of around 300 °C. Furthermore, we delve into the characterization of TiN thin film quality and fabricated TiN triangular nanostructures, employing attenuated total reflectance and cathodoluminescence techniques to highlight their potential applications in surface plasmonics.

Plasmonic Titanium Nitride Nanohole Arrays for Refractometric Sensing

Group IVB metal nitrides have attracted great interest as alternative plasmonic materials. Among them, titanium nitride (TiN) stands out due to the ease of deposition and relative abundance of Ti compared to those of Zr and Hf metals. Even though they do not have Au or Ag-like plasmonic characteristics, they offer many advantages, from high mechanical stability to refractory behavior and complementary metal oxide semiconductor-compatible fabrication to tunable electrical/optical properties. In this study, we utilized reactive RF magnetron sputtering to deposit plasmonic TiN thin films. The flow rate and ratio of Ar/N2 and oxygen scavenging methods were optimized to improve the plasmonic performance of TiN thin films. The stoichiometry and structure of the TiN thin films were thoroughly investigated to assess the viability of the optimized operation procedures. To assess the plasmonic performance of TiN thin films, periodic nanohole arrays were perforated on TiN thin films by using electron beam lithography and reactive ion etching methods. The resulting TiN periodic nanohole array with varying periods was investigated by using a custom microspectroscopy setup for both reflection and transmission characteristics in various media to underline the efficacy of TiN for refractometric sensing.

Enhanced plasmonic photocatalytic performance of C doped TiN nanocrystals through ultrathin carbon layers

Carbon-doped TiN nanoparticles on an ultrathin carbon layer, were successfully used for photocatalytic dye degradation synthesised by a simple calcination process. The resulting catalyst exhibited remarkable plasmonic photocatalytic performance under visible light irradiation. In comparison with benchmark rutile TiO2 and g-C3N4/TiO2 heterostructure catalysts, the first-order reaction rate constant of the developed catalyst improved approximately 34.2 and 6.5 times, respectively. The doping concentration of carbon and the crystal size of TiN nanoparticles, predominantly influenced by the amount of urea and calcination temperature, were identified as crucial factors governing the plasmonic photocatalytic activity. Density functional theory (DFT) calculations indicated that the introduction of carbon-sp bands into the TiN band structure promoted interband excitation of electrons and facilitated the generation of hotter holes, thereby enhancing the degradation of dyes and ultimately contributing to the superior photocatalytic activity observed.

Thermoplasmonic In Situ Fabrication of Nanohybrid Electrocatalysts over Gas Diffusion Electrodes for Enhanced H2O2 Electrosynthesis

Large-scale development of electrochemical cells is currently hindered by the lack of Earth-abundant electrocatalysts with high catalytic activity, product selectivity, and interfacial mass transfer. Herein, we developed an electrocatalyst fabrication approach which responds to these requirements by irradiating plasmonic titanium nitride (TiN) nanocubes self-assembled on a carbon gas diffusion layer in the presence of polymeric binders. The localized heating produced upon illumination creates unique conditions for the formation of TiN/F-doped carbon hybrids that show up to nearly 20 times the activity of the pristine electrodes. In alkaline conditions, they exhibit enhanced stability, a maximum H2O2 selectivity of 90%, and achieve a H2O2 productivity of 207 mmol gTiN-1 h-1 at 0.2 V vs RHE. A detailed electrochemical investigation with different electrode arrangements demonstrated the key role of nanocomposite formation to achieve high currents. In particular, an increased TiOxNy surface content promoted a higher H2O2 selectivity, and fluorinated nanocarbons imparted good stability to the electrodes due to their superhydrophobic properties.

Tailoring the Thickness-Dependent Optical Properties of Conducting Nitrides and Oxides for Epsilon-Near-Zero-Enhanced Photonic Applications

The unique properties of the emerging photonic materials, conducting nitrides and oxides, especially their tailorability, large damage thresholds, and, importantly, the so-called epsilon-near-zero (ENZ) behavior, have enabled novel photonic phenomena spanning optical circuitry, tunable metasurfaces, and nonlinear optical devices. This work explores direct control of the optical properties of polycrystalline titanium nitride (TiN) and aluminum-doped zinc oxide (AZO) by tailoring the film thickness, and their potential for ENZ-enhanced photonic applications. This study demonstrates that TiN-AZO bilayers support Ferrell-Berreman modes using the thickness-dependent ENZ resonances in the AZO films operating in the telecom wavelengths spanning from 1470 to 1750 nm. The bilayer stacks also act as strong light absorbers in the ultraviolet regime using the radiative ENZ modes and the Fabry-Perot modes in the constituent TiN films. The studied Berreman resonators exhibit optically induced reflectance modulation of 15% with picosecond response time. Together with the optical response tailorability of conducting oxides and nitrides, using the field enhancement near the tunable ENZ regime can enable a wide range of nonlinear optical phenomena, including all-optical switching, time refraction, and high-harmonic generation.

Step-By-Step Development of Vertically Aligned Carbon Nanotubes by Plasma-Enhanced Chemical Vapor Deposition

In this work, the growth process of self-sustained vertically aligned carbon nanotubes (VA-CNTs) is investigated in full: from bare Si wafers to fully grown VA-CNTs on 4″ wafers. Each developmental step, from supporting and catalyst layers’ depositions to CNT growth, is analyzed through X-ray diffraction, X-ray reflectivity, and scanning electron microscopy, respectively. The crystalline structure of the titanium nitride supporting layer is investigated through grazing incidence X-ray diffraction, while X-ray reflectivity provides information regarding the density, thickness, and roughness of the titanium nitride layer via extended Fourier analysis. Further, the nickel layers’ and CNTs’ morphologies are investigated by scanning electron microscopy.

TiN–Fe Vertically Aligned Nanocomposites Integrated on Silicon as a Multifunctional Platform toward Device Applications

Transition metal nitrides such as titanium nitride (TiN) possess exceptional mechanical-, chemical-, and thermal-stability and have been utilized in a wide variety of applications ranging from super-hard, corrosion-resistive, and decorative coatings to nanoscale diffusion barriers in semiconductor devices. Despite the ongoing interest in these robust materials, there have been limited reports focused on engineering high-aspect ratio TiN-based nanocomposites with anisotropic magnetic and optical properties. To this end, we explored TiN–Fe thin films with self-assembled vertical structures integrated on Si substrates. We showed that the key physical properties of the individual components (e.g., ferromagnetism from Fe) are preserved, that vertical nanostructures promote anisotropic behavior, and interactions between TiN and Fe enable a special magneto-optical response. This TiN–Fe nanocomposite system presents a new group of complex multifunctional hybrid materials that can be integrated on Si for future Si-based memory, optical, and biocompatible devices.

Ultrathin TiN Epitaxial Films as Transparent Conductive Electrodes

Titanium nitride (TiN), a transition-metal compound with tight covalent Ti-N bonding, has a high melting temperature and superior mechanical and chemical stabilities compared to noble metals. With a reduction in thickness, the optical transmittance of TiN films can be drastically increased, and in combination with its excellent electrical conductivity, the ultrathin and continuous TiN film can be considered as an ideal alternative of the metal oxide electrodes. However, the deposition of ultrathin and continuous metallic layer with a smooth surface morphology is a major challenge for typical deposition methods such as thermal evaporation or reactive sputtering. In particular, defects mainly related with oxygen contents and surface scattering can significantly limit the performance of ultrathin TiN films. In this work, ultrathin TiN films with 2-10 nm in thickness are grown by using the nitrogen plasma-assisted molecular-beam epitaxy (MBE) method in an ultrahigh vacuum environment. Excellent surface morphology with a root-mean-square roughness of ≤0.12 nm and a high optical transparency of 75% over the whole visible regime are achieved for ultrathin TiN epitaxial films. The dielectric properties determined by the spectroscopic ellipsometry and the electrical properties measured by the terahertz spectroscopy and the Hall effect method reveal that the percolation thickness of the TiN epitaxial film is less than 2.4 nm and its electrical conductivity is higher than 1.1 × 10⁴ Ω^-1 cm^-1. These features make MBE-grown ultrathin TiN epitaxial films a good candidate for robust, low cost, and large-area transparent conductive electrodes.

Titanium nitride as an alternative and reusable plasmonic substrate for fluorescence coupling

The development of alternative plasmonic materials that can replace gold and silver is of long-standing interest in materials research. In this study, we have prepared and characterized thin films of TiN, an emerging plasmonic material, and examined its effectiveness for fluorescence coupling in metal-dielectric structures having TiN as the plasmonically active component. We have used a combination of experiment and reflectivity calculations to determine the nature and dispersion of the optical modes sustained by the metal-dielectric structures, which furthermore are adjustable by varying the thickness of the dielectric layer. Our results reveal that fluorophores placed on the TiN substrates can couple with the surface-plasmon mode and/or the waveguide modes supported by these structures, to provide polarized and directional emission over narrow angular ranges. The performance of TiN substrates for surface plasmon-coupled emission (SPCE) and waveguide-coupled emission (WGCE) is found to be comparable with conventional Au substrates. Importantly, the TiN thin films are reusable, which is certainly advantageous for their use in SPCE or WGCE-based fluorescence sensing applications.

Flexible Titanium Nitride/Germanium-Tin Photodetectors Based on Sub-Bandgap Absorption

We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn) photodetectors (PDs) with an extended photodetection range based on sub-bandgap absorption. Single-crystalline GeSn membranes transfer-printed on poly(ethylene terephthalate) are integrated with plasmonic TiN to form a TiN/GeSn heterojunction. Formation of the heterojunction creates a Schottky contact between the TiN and GeSn. A Schottky barrier height of 0.49 eV extends the photodetection wavelength to 2530 nm and further enhances the light absorption capability within the detection range. In addition, finite-difference time-domain simulation proves that the integration of TiN and GeSn could enhance average absorption from 0.13 to 0.33 in the near-infrared (NIR) region (e.g., 1400-2000 nm) and more than 70% of light is absorbed in TiN. The responsivity of the fabricated TiN/GeSn PDs is increased from 30 to 148.5 mA W^-1 at 1550 nm. There is also an ∼180 nm extension in the optical absorption wavelength of the flexible TiN/GeSn PD. The enhanced performance of the device is attributed to the absorption and separation of plasmonic hot carriers via TiN and the TiN/GeSn junction, respectively. The effect of external uniaxial strain is also investigated. A tensile strain of 0.3% could further increase the responsivity from 148.5 to 218 mA W^-1, while it is decreased to 102 mA W^-1 by 0.25% compressive strain. In addition, the devices maintain stable performance after multiple and long bending cycles. Our results provide a robust and cost-effective method to extend the NIR photodetection capability of flexible group IV PDs.

Titanium Nitride as a Plasmonic Material from Near-Ultraviolet to Very-Long-Wavelength Infrared Range

Titanium nitride is a well-known conductive ceramic material that has recently experienced resumed attention because of its plasmonic properties comparable to metallic gold and silver. Thus, TiN is an attractive alternative for modern and future photonic applications that require compatibility with the Complementary Metal-Oxide-Semiconductor (CMOS) technology or improved resistance to temperatures or radiation. This work demonstrates that polycrystalline TiN_x films sputtered on silicon at room temperature can exhibit plasmonic properties continuously from 400 nm up to 30 μm. The films’ composition, expressed as nitrogen to titanium ratio x and determined in the Secondary Ion Mass Spectroscopy (SIMS) experiment to be in the range of 0.84 to 1.21, is essential for optimizing the plasmonic properties. In the visible range, the dielectric function renders the interband optical transitions. For wavelengths longer than 800 nm, the optical properties of TiN_x are well described by the Drude model modified by an additional Lorentz term, which has to be included for part of the samples. The ab initio calculations support the experimental results both in the visible and infra-red ranges; particularly, the existence of a very low energy optical transition is predicted. Some other minor features in the dielectric function observed for the longest wavelengths are suspected to be of phonon origin.

Toward high laser power beam manipulation with nanophotonic materials: evaluating thin film damage performance

Nanophotonic materials enable unprecedented control of light-matter interactions, including the ability to dynamically steer or shape wavefronts. Consequently, nanophotonic systems such as metasurfaces have been touted as promising candidates for free-space optical communications, directed energy and additive manufacturing, which currently rely on slow mechanical scanners or electro-optical components for beam steering and shaping. However, such applications necessitate the ability to support high laser irradiances (> kW/cm²) and systematic studies on the high-power laser damage performance of nanophotonic materials and designs are sparse. Here, we experimentally investigate the pulsed laser-induced damage performance (at λ ∼ 1 µm) of model nanophotonic thin films including gold, indium tin oxide, and refractory materials such as titanium nitride and titanium oxynitride. We also model the spatio-thermal dissipation dynamics upon single-pulse illumination by anchoring experimental laser damage thresholds. Our findings show that gold exhibits the best laser damage resistance, but we argue that alternative materials such as transparent conducting oxides could be optimized to balance the tradeoff between damage resistance and optical tunability, which is critical for the design of thermally robust nanophotonic systems. We also discuss damage mitigation and ruggedization strategies for future device-scale studies and applications requiring high power beam manipulation.

Complementary Metal-Oxide-Semiconductor Compatible Deposition of Nanoscale Transition-Metal Nitride Thin Films for Plasmonic Applications

Transition-metal nitrides have received significant interest for use within plasmonic and optoelectronic devices because of their tunability and environmental stability. However, the deposition temperature remains a significant barrier to widespread adoption through the integration of transition-metal nitrides as plasmonic materials within complementary metal-oxide-semiconductor (CMOS) fabrication processes. Binary, ternary, and layered plasmonic transition-metal nitride thin films based on titanium and niobium nitride are deposited using high-power impulse magnetron sputtering (HIPIMS) technology. The increased plasma densities achieved in the HIPIMS process allow thin films with high plasmonic quality to be deposited at CMOS-compatible temperatures of less than 300 °C. Thin films are deposited on a range of industrially relevant substrates and display-tunable plasma frequencies in the ultraviolet to visible spectral ranges. Strain-mediated tunability is discovered in layered films compared to that in ternary films. The thin film quality, combined with the scalability of the deposition process, indicates that HIPIMS deposition of nitride films is an industrially viable technique and can pave the way toward the fabrication of next-generation plasmonic and optoelectronic devices.

Mesoporous Titanium Oxynitride Monoliths from Block Copolymer-Directed Self-Assembly of Metal-Urea Additives

This report describes a simple one-pot soft-templating and ammonolysis-free approach to synthesize mesoporous crystalline titanium oxynitride by combining block copolymer-directed self-assembly with metal sol and urea precursors. The Pluronic F127 triblock copolymer was employed to structure-direct titanium-oxo-acetate sol nanoparticles and urea-formaldehyde into ordered hybrid mesostructured monoliths. The hybrid composites were directly converted into mesoporous crystalline titanium oxynitride and retained macroscale monolithic integrity up to 800 °C under nitrogen. Notably, the urea-formaldehyde additive provided nitrogen and rigid support to the inorganic mesostructure during crystallization. The resultant mesoporous titanium oxynitride exhibited good electrochemical catalytic activity toward hydrogen evolution reaction in 1 M KOH aqueous medium under applied bias. Our results suggest an inexpensive and safe pathway to generate ordered mesoporous crystalline metal oxynitride structures suitable for catalyst and energy-storage applications.