Heterogeneously integrated ITO plasmonic Mach-Zehnder interferometric modulator on SOI

Electrically tunable space-time metasurfaces at optical frequencies

Active metasurfaces enable dynamic manipulation of the scattered electromagnetic wavefront by spatially varying the phase and amplitude across arrays of subwavelength scatterers, imparting momentum to outgoing light. Similarly, periodic temporal modulation of active metasurfaces allows for manipulation of the output frequency of light. Here we combine spatial and temporal modulation in electrically modulated reflective metasurfaces operating at 1,530 nm to generate and diffract a spectrum of sidebands at megahertz frequencies. Temporal modulation with tailored waveforms enables the design of a spectrum of sidebands. By impressing a spatial phase gradient on the metasurface, we can diffract selected combinations of sideband frequencies. Combining active temporal and spatial variation can enable unique optical functions, such as frequency mixing, harmonic beam steering or shaping, and breaking of Lorentz reciprocity.

Tailorable ITO thin films for tunable microwave photonic applications

Tunability is a fundamental prerequisite for functional devices and forms the backbone of reconfigurable microwave photonic (MWP) signal processors. In this paper, we explore the use of indium tin oxide (ITO) thin films, notable for their combination of optical transparency and electrical conductivity, to provide tunability for integrated MWP devices. We study the impacts of post-thermal annealing on the structural, electrical, and optical properties of ITO films. The annealed ITO microheater maintains a low total insertion loss of just 0.1 dB while facilitating the tunability of the microring across the entire free spectral range (FSR) using less than half the voltage required by its non-annealed counterpart. Furthermore, the post-annealed ITO film exhibits a 30% improvement in response time, enhancing its performance as an active voltage-controlled microheater. Leveraging this advantage, we employed the post-annealed device to demonstrate continuous tunable radio frequency (RF) phase shifts from 0-330° across a frequency range spanning 15 GHz to 40 GHz with only 5.58 mW of power. The flexibility in modifying the ITO thin film properties effectively bridges the gap between achieving low-loss and high-speed thermo-optic based microheaters.

Enhancing Focusing and Defocusing Capabilities with a Dynamically Reconfigurable Metalens Utilizing Sb2Se3 Phase-Change Material

Metalenses are emerging as an alternative to digital micromirror devices (DMDs), with the advantages of compactness and flexibility. The exploration of metalenses has ignited enthusiasm among optical engineers, positioning them as the forthcoming frontier in technology. In this paper, we advocate for the implementation of the phase-change material, Sb2Se3, capable of providing swift, reversible, non-volatile focusing and defocusing within the 1550 nm telecom spectrum. The lens, equipped with a robust ITO microheater, offers unparalleled functionality and constitutes a significant step toward dynamic metalenses that can be integrated with beamforming applications. After a meticulously conducted microfabrication process, we showcase a device capable of rapid tuning (0.1 MHz level) for metalens focusing and defocusing at C band communication, achieved by alternating the PCM state between the amorphous and crystalline states. The findings from the experiment show that the device has a high contrast ratio for switching of 28.7 dB.

High-speed polarization-independent plasmonic modulator on a silicon waveguide

The electrical bandwidth of an electro-optic modulator plays a vital role in determining the throughput of an optical communications link. We propose a broadband plasmonic electro-optic modulator operating at telecommunications wavelengths (λ₀ ∼ 1550 nm), based on free carrier dispersion in indium tin oxide (ITO). The ITO is driven through its epsilon-near-zero point within the accumulation layers of metal-oxide-semiconductor (MOS) structures. The MOS structures are integrated into a pair of coupled metal-insulator-metal (MIM) waveguides aligned on a planarized silicon waveguide. The coupled MIM waveguides support symmetric and asymmetric plasmonic supermodes, excited adiabatically using mode transformation tapers, by the fundamental TM₀ and TE₀ modes of the underlying silicon waveguide, respectively, such that the modulator can operate in either mode as selected by the input polarisation to the silicon waveguide. The modulator has an active section 1.5 to 2 µm long, enabling the modulator to operate as a lumped element to bandwidths exceeding 200 GHz (3 dB electrical, RC-limited). The modulators produce an extinction ratio in the range of 3.5 to 6 dB, and an insertion loss in the range of 4 to 7.5 dB including input/output mode conversion losses. The AC drive voltage is ±1.75 V. The devices comprise only inorganic materials and are realisable using standard deposition, etching and nanolithography techniques.

Deep Learning Image Analysis of Nanoplasmonic Sensors: Toward Medical Breath Monitoring

Sensing biomarkers in exhaled breath offers a potentially portable, cost-effective, and noninvasive strategy for disease diagnosis screening and monitoring, while high sensitivity, wide sensing range, and target specificity are critical challenges. We demonstrate a deep learning-assisted plasmonic sensing platform that can detect and quantify gas-phase biomarkers in breath-related backgrounds of varying complexity. The sensing interface consisted of Au/SiO₂ nanopillars covered with a 15 nm metal-organic framework. A small camera was utilized to capture the plasmonic sensing responses as images, which were subjected to deep learning signal processing. The approach has been demonstrated at a classification accuracy of 95 to 98% for the diabetic ketosis marker acetone within a concentration range of 0.5-80 μmol/mol. The reported work provides a thorough exploration of single-sensor capabilities and sets the basis for more advanced utilization of artificial intelligence in sensing applications.

High-performance Mach-Zehnder modulator using tailored plasma dispersion effects in an ITO/graphene-based waveguide

A high-performance electro-optic Mach–Zehnder modulator (MZM) with outstanding characteristics is proposed. The MZM is in a push-pull configuration that is constructed using an ITO/graphene-based silicon waveguide. A novel idea for engineering of the plasma dispersion effect in an ITO/graphene-based waveguide is proposed so that the modulation characteristics of the MZM are highly improved. Plasma dispersion effects of ITO and graphene layers are tailored in such a way that a large difference between real parts of guided mode effective index of the two arms is achieved while their corresponding imaginary parts are equal. As a result, a very low \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\mathrm {V}}}_{\pi }L_{\pi }$$\end{document}VπLπ of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$10 \, \hbox {V} \upmu \hbox {m}$$\end{document}10Vμm is achieved. To the best of our knowledge, this is one of the lowest \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\mathrm {V}}}_{\pi }L_{\pi }$$\end{document}VπLπ reported for an electro-optic modulator. In addition, the proposed modulator exhibits a very high extinction ratio of more than 30 dB, low insertion loss of 2.8 dB and energy consumption of as low as 10 fJ/bit, which are all promising for optical communication and processing systems.

A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration

A complementary metal-oxide-semiconductor (CMOS)-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is designed and analyzed theoretically. The CIPMRM has a compacted footprint of 49.3 μm2 (R = 2 μm), a bit rate of 36.5 Gbps, insertion loss of −9.8 dB, a static extinction ratio of 21.7 dB, and energy consumption of 4.40 pJ/bit as 2.2 V peak-to-peak voltage is applied at 1550 nm. Besides, the method of resonance tuning by carrier concentration is proposed to compensate for the wavelength mismatch between the CIPMRM resonance and the laser, resulting from temperature and line width variation of the CIPMRM. This method has a faster response time and a greater ability to shift the resonant wavelength compared with the method of thermo-optic resonance tuning. The proposed scheme provides a route for realizing the compacted size modulator for optoelectronic integration.

ITO film stack engineering for low-loss silicon optical modulators

The Indium Tin Oxide (ITO) platform is one of the promising solutions for state-of-the-art integrated optical modulators towards low-loss silicon photonics applications. One of the key challenges on this way is to optimize ITO-based thin films stacks for electro-optic modulators with both high extinction ratio and low insertion loss. In this paper we demonstrate the e-beam evaporation technology of 20 nm-thick ITO films with low extinction coefficient of 0.14 (N_c = 3.7·10²⁰ cm⁻³) at 1550 nm wavelength and wide range of carrier concentrations (from 1 to 10 × 10²⁰ cm⁻³). We investigate ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure to achieve the desired optical and electrical parameters. Here we report the mechanism of oxygen migration in ITO film crystallization based on observed morphological features under low-energy growth conditions. Finally, we experimentally compare the current–voltage and optical characteristics of three electro-optic active elements based on ITO film stacks and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550 nm under ± 16 V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-dB losses.