On-chip fabrication of high performance nanostructured ZnO UV detectors

Charge transfer and X-ray absorption investigations in aluminium and copper co-doped zinc oxide nanostructure for perovskite solar cell electrodes

This study explores influence of charge transfer and X-ray absorption characteristics in aluminum (Al) and copper (Cu) co-doped zinc oxide (ZnO) nanostructures for perovskite solar cell electrodes. Sol-gel technique was employed to synthesize the nanostructures, and their optical and morphological properties were investigated. X-ray diffraction (XRD) analysis confirmed high crystallinity and also single-phase composition of all the samples, particularly up to 5% Al co-doping. Field emission scanning electron microscopy (FESEM) exhibited the formation of pseudo-hexagonal wurtzite nanostructure and the transition to nanorods at 5% Al co-doping. Diffuse reflectance spectroscopy indicated a reduction in the optical band gap of co-doped zinc oxide from 3.11 to 2.9 eV with increasing Al doping. Photoluminescence spectra (PL) exhibited a decrease in peak intensity, suggesting enhanced conductivity in ZnO, also confirmed from I-V measurements. Near-edge X-ray absorption fine structure (NEXAFS) analysis depicts that charge transfer from Al to oxygen (O) species enhanced the photosensing properties of the nanostructure, which was supported by FESEM micrographs and PL spectra. Furthermore, the study discovered that 5% Al co-doping significantly reduced the density of emission defects (deep-level) in Cu-ZnO nanostructure. These findings highlight the potential of Cu and Al co-doped ZnO materials for perovskite solar cell electrodes, as their improved optical and morphological properties resulting from charge transfer could enhance device performance. The investigation of charge transfer and X-ray absorption characteristics provides valuable insights into the underlying mechanisms and behaviors of the co-doped ZnO nanostructures. However, further research is required to delve into the intricate hybridization resulting from charge transfer and explore the broader impact of co-doping on other properties of the nanostructures, enabling a comprehensive understanding of their potential applications in perovskite solar cells.

On-substrate fabrication of a self-activated nanostructured ZnO gas sensor

Gaining rational control over bottom-up device fabrication processes is necessary to achieve high-performance devices and overcome technical obstacles. Among these is the need for activation of metal oxide gas sensors (GSs) by an external heating source, which limits their miniaturization and integration. A well-controlled, seedless, and position-selective hydrothermal method to fabricate high-performance self-activated zinc oxide (ZnO) nano-needle (ZNN) GSs directly on a substrate was developed. The morphology and position of the grown ZnO nanostructures were controlled by tuning the substrate coating and growth reaction parameters such as the growth solution concentration and the growth time, as well as introducing capping agents to the growth solution during the growth process. Furthermore, the efficiency of the fabricated device structure was improved and subsequently enhanced its performance substantially. Compared to other fabricated nanostructured ZnO GSs, the on-substrate fabricated bridging ZNN (BZNN) GS demonstrated superior sensitivity and self-activation, which were attributed to the reduction in the sensing material dimensions and ultrahigh surface-to-volume ratio, as well as the unique device structure with direct contact between ZnO and Au electrodes. This work paves the way for low cost, large scale, low temperature, seedless and position-selective fabrication of high-performance self-activated nanostructured ZnO GSs on flexible and transparent substrates.

Hybrid ZnO Flowers-Rods Nanostructure for Improved Photodetection Compared to Standalone Flowers and Rods

Different Zinc Oxide (ZnO) morphologies have been used to improve photodetector efficiencies for optoelectronic applications. Herein, we present the very novel hybrid ZnO flower-rod (HZFR) morphology, to improve photodetector response and efficiency when compared to the prevalently used ZnO nanorods (NRs) and ZnO nanoflowers (NFs). The HZFR was fabricated via sol-gel microwave-assisted hydrothermal methods. HZFR achieves the benefits of both NFs, by trapping a greater amount of UV light for the generation of e-h pairs, and NRs, by effectively transporting the generated e-h pairs to the channel. The fabricated photosensors were characterized with scanning electron microscopy, X-ray diffraction, photoluminescence, and a Keithley 4200A-SCS parameter analyzer for their morphology, structural characteristics, optical performance, and electrical characteristics, respectively. The transient current response, current-voltage characteristics, and responsivity measurements were set as a benchmark of success to compare the sensor response of the three different morphologies. It was found that the novel HZFR showed the best UV sensor performance with the fastest response time (~7 s), the highest on-off ratio (52), and the best responsivity (126 A/W) when compared to the NRs and NFs. Hence, it was inferred that the HZFR morphology would be a great addition to the ZnO family for photodetector applications.

Effects of Seed-Layer N2O Plasma Treatment on ZnO Nanorod Based Ultraviolet Photodetectors: Experimental Investigation with Two Different Device Structures

The crystalline quality of ZnO NR (nanorod) as a sensing material for visible blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) material of properties, which is a key to high-quality nanocrystallite growth, more so than the synthesis method. In this study, we fabricated two different device structures of a gateless AlGaN/GaN HEMT (high electron mobility transistor) and a photoconductive PD structure with an IDE (interdigitated electrode) pattern implemented on a PET (polyethylene terephthalate) flexible substrate, and investigated the impact on device performance through the SL N₂O plasma treatment. In case of HEMT-based PD, the highest current on-off ratio (~7) and spectral responsivity R (~1.5 × 10⁵ A/W) were obtained from the treatment for 6 min, whereas the IDE pattern-based PD showed the best performance (on-off ratio = ~44, R = ~69 A/W) from the treatment for 3 min and above, during which a significant etch damage on PET substrates was produced. This improvement in device performance was due to the enhancement in NR crystalline quality as revealed by our X-ray diffraction, photoluminescence, and microanalysis.

The role of surface stoichiometry in NO2 gas sensing using single and multiple nanobelts of tin oxide

Typically used semiconducting metal oxides (SMOs) consist of several varying factors that affect gas sensor response, including film thickness, grain size, and notably the grain-grain junctions within the active device volume, which complicates the analysis and optimisation of sensor response. In comparison, devices containing a single nanostructured element do not present grain-grain junctions, and therefore present an excellent platform to comprehend the correlation between nanostructure surface stoichiometry and sensor response to the depletion layer (Debye length, LD) variation after the analyte gas adsorption/chemisorption. In this work, nanofabricated devices containing SnO2 and Sn3O4 individual nanobelts of different thicknesses were used to estimate their LD after NO2 exposure. In the presence of 40 ppm of NO2 at 150 °C, LD of 12 nm and 8 nm were obtained for SnO2 and Sn3O4, respectively. These values were associated to the sensor signals measured using multiple nanobelts onto interdigitated electrodes, outlining that the higher sensor signal of the Sn4+ surface (up to 708 for 100 ppm NO2 at 150°) in comparison with the Sn2+ (up to 185) can be explained based on a less depleted initial state and a lower surface electron affinity caused by the Lewis acid/base interactions with oxygen species from the baseline gas. To support the proposed mechanisms, we investigated the gas sensor response of SnO2 nanobelts with a higher quantity of oxygen vacancies and correlated the results to the SnO system.

Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin-Film Transistor and Sensor Behavior of ZnO Films and Rods

Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin-film transistors reveals moderate charge carrier mobilities as high as 0.2 cm2  V-1 s-1 . The semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 °C. The defect structure of the thin ZnO film can be tracked by Doppler-broadening positron annihilation spectroscopy as well as positron lifetime studies. Comparably long positron lifetimes suggest interaction of zinc vacancies (VZn ) with one or more oxygen vacancies (VO ) in larger structural entities. Such VO -VZn defect clusters act as shallow acceptors, and thus, reduce the overall electron conductivity of the film. The concentration of these defect clusters decreases at higher calcination temperatures as indicated by changes in the S and W parameters. Such zinc oxide films obtained by conversion of metallic zinc can also be used as seed layers for solution deposition of zinc oxide nanowires employing a mild microwave-assisted process. The functionality of the obtained nanowire arrays is tested in a UV sensor device. The best results with respect to sensor sensitivity are achieved with thinner seed layers for device construction.

The effects of sub-bandgap transitions and the defect density of states on the photocurrent response of a single ZnO-coated silica nanospring

The electrical and optoelectronic properties of nanometer-sized ZnO structures are highly influenced by its native point defects. Understanding and controlling these defects are essential for the development of high-performance ZnO-based devices. Here, an electrical device consisting of a polycrystalline ZnO-coated silica nanospring was fabricated and used to characterize the electrical and photoconductive properties of the ZnO layer using near-UV (405 nm) and sub-bandgap (532 and 633 nm) excitation sources. We observe a photocurrent response with all three wavelengths and notably with 532 nm green illumination, which is the energy associated with deep oxygen vacancies. The polycrystalline ZnO-coated silica nanospring exhibits a high responsivity of 1740 A W^-1 with the 405 nm excitation source. Physical models are presented to describe the photocurrent rise and decay behavior of each excitation source where we suggest that the rise and decay characteristics are highly dependent on the energy of the excitation source and the trapping of electrons and holes in intermediate defect levels in the bandgap. The energy levels of the trap depths were determined from the photoconductive decay data and are matched to the reported energy levels of singly and doubly ionized oxygen vacancies. A phenomenological model to describe the dependence of the saturation photocurrent on excitation intensity is presented in order to understand the characteristics of the observed breaks in the slopes of the saturation photocurrent versus excitation intensity profile.

Enhancement in the photonic response of ZnO nanorod-gated AlGaN/GaN HEMTs with N2O plasma treatment

We demonstrate an improvement in the photoresponse characteristics of ultraviolet (UV) photodetectors (PDs) using the N₂O plasma-treated ZnO nanorod (NR) gated AlGaN/GaN high electron mobility transistor (HEMT) structure. The PDs fabricated with ZnO NRs plasma-treated for 6 min show superior performance in terms of responsivity (∼1.54×10 ⁵ A/W), specific detectivity (∼ 4.7×10¹³ cm·Hz^-1/2/W), and on/off current ratio (∼40). These improved performance parameters are the best among those from HEMT-based PDs reported to date. Photoluminescence analysis shows a significant enhancement in near band edge emission due to the effective suppression of native defects near the surface of ZnO NRs after plasma treatment. As our X-ray photoelectron spectroscopy reveals a very high O/Zn ratio of ∼0.96 from the NR samples plasma-treated for 6 min, the N₂O plasma radicals also show a clear impact on ZnO stoichiometry. From our X-ray diffraction analysis, the plasma-treated ZnO NRs show much greater improvement in (002) peak intensity and degree of (002) orientation (∼0.996) than those of as-grown NRs. This significant enhancement in (002) degree of orientation and stoichiometry in ZnO nano-crystals contribute to the enhancement in photoresponse characteristics of the PDs.

Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors

This study presents a fast and effective method to synthesize 2D boron nitride/tungsten nitride (BN–WN) nanocomposites for tunable bandgap structures and devices. A few minutes of synthesis yielded a large quantity of high-quality 2D nanocomposites, with which a simple, low-cost deep UV photo-detector (DUV-PD) was fabricated and tested. The new device was demonstrated to have very good performance. High responsivity up to 1.17 A/W, fast response-time of lower than two milliseconds and highly stable repeatability were obtained. Furthermore, the influences of operating temperature and applied bias voltage on the properties of DUV-PD as well as its band structure shift were investigated.

Ultraviolet Photodetection Based on High-Performance Co-Plus-Ni Doped ZnO Nanorods Grown by Hydrothermal Method on Transparent Plastic Substrate

A growth scheme at a low processing temperature for high crystalline-quality of ZnO nanostructures can be a prime stepping stone for the future of various optoelectronic devices manufactured on transparent plastic substrates. In this study, ZnO nanorods (NRs) grown by the hydrothermal method at 150 °C through doping of transition metals (TMs), such as Co, Ni, or Co-plus-Ni, on polyethylene terephthalate substrates were investigated by various surface analysis methods. The TM dopants in ZnO NRs suppressed the density of various native defect-states as revealed by our photoluminescence and X-ray photoelectron spectroscopy analysis. Further investigation also showed the doping into ZnO NRs brought about a clear improvement in carrier mobility from 0.81 to 3.95 cm2/V-s as well as significant recovery in stoichiometric contents of oxygen. Ultra-violet photodetectors fabricated with Co-plus-Ni codoped NRs grown on an interdigitated electrode structure exhibited a high spectral response of ~137 A/W, on/off current ratio of ~135, and an improvement in transient response speed with rise-up and fall-down times of ~2.2 and ~3.1 s, respectively.

Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?

Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when the substrate is clearly not an epitaxial template. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a specific example - the case of ZnO nanowires grown on silicon oxide. We show how electric fields exerted by the insulating substrate may be manipulated through the surface charge to define the orientation and polarity of the nanowires. Surface charge is ubiquitous on the surfaces of semiconductors and insulators, and as a result, substrate electric fields need always be considered. Our results suggest a new concept, according to which the growth of wurtzite semiconductors may often be described as a process of electric-charge-induced self-assembly, wherein the internal built-in field in the polar material tends to align in parallel to an external field exerted by the substrate to minimize the interfacial energy of the system.

Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance

Hitherto, most research has primarily focused on improving the UV sensor efficiency via surface treatments and by stimulating the ZnO nanorod (ZNR) surface Schottky barriers. However, to the best of our knowledge, no study has yet probed the intrinsic crystal defect generation and its effects on UV sensor efficiency. In this study, we undertake this task by fabricating an intrinsic defect-prone hydrothermally grown ZNRs (S1), Ga-doped ZNRs (S2), and defect-free microwave-assisted grown ZNRs (S3). The defect states were recognized by studying X-ray diffraction and photoluminescence characteristics. The large number of crystal defects in S1 and S2 had two pronged disadvantages. (1) Most of the UV light was absorbed by the defect traps and the e-h pair generation was compromised. (2) Mobility was directly affected by the carrier-carrier scattering and phonon scattering processes. Hence, the overall UV sensor efficiency was compromised based on the defect-induced mobility-response model. Considering the facts, defect-free S3 exhibited the best UV sensor performance with the highest on/off ratio, the least impulse response time, the highest recombination time, and highest gain-induced responsivity to 368 nm UV light, which was desired of an efficient passive metal oxide-based UV sensor. Our results were compared with the recently published results.

Seeded growth of ZnO nanowires in dye-containing solution: the submerged plant analogy and its application in photodegradation of dye pollutants

Joint effects of dye capping and light irradiation on seeded solution growth of ZnO nanowires are demonstrated.

Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications

ZnO nanowires are considered as attractive building blocks for piezoelectric devices, including nano-generators and stress/strain sensors. However, their integration requires the use of metallic seed layers, on top of which the formation mechanisms of ZnO nanowires by chemical bath deposition are still largely open. In order to tackle that issue, the nucleation and growth mechanisms of ZnO nanowires on top of Au seed layers with a thickness in the range of 5-100 nm are thoroughly investigated. We show that the ZnO nanowires present two different populations of nano-objects with a given morphology. The majority primary population is made of vertically aligned ZnO nanowires, which are heteroepitaxially formed on top of the Au (111) grains. The resulting epitaxial strain is found to be completely relieved at the Au/ZnO interface. In contrast, the minority secondary population is composed of ZnO nanowires with a significant mean tilt angle around 20° with respect to the normal to the substrate surface, which are presumably formed on the (211) facets of the Au (111) grains. The elongation of ZnO nanowires is further found to be limited by the surface reaction at the c-plane top facet in the investigated conditions. By implementing the selective area growth using electron beam lithography, the position of ZnO nanowires is controlled, but the two populations still co-exist in the ensemble. These findings provide an in-depth understanding of the formation mechanisms of ZnO nanowires on metallic seed layers, which should be taken into account for their more efficient integration into piezoelectric devices.

High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates

As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyethylene terephthalate (PET) substrates in an attempt to improve the performance of flexible PDs. The doping with Ni/Cu or Cu not only improves the crystalline quality but also significantly suppresses the density of deep-level emission defects in as-grown ZnO nanorods, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, the X-ray photoelectron spectroscopy analysis shows that doping with the transition metals significantly increases the oxygen bonding with metal ions with enhanced O/Zn stoichiometry in as-grown nanorods. The fabricated flexible PD devices based on an interdigitated electrode structure demonstrates a very high R of ~123 A/W, a high on-off current ratio of ~130, and a significant improvement in transient response speed exhibiting rise and fall time of ~8 and ~3 s, respectively, by using the ZnO nanorods codoped by Ni/Cu.

Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors

Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society. A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity. Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs. This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design. A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented. Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted. Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized.

Improved Synthesis of ZnO Nanowalls: Effects of Chemical Bath Deposition Time and Annealing Temperature

Zinc Oxide (ZnO) nanowalls (NWLs) are interesting nanostructures for sensing application. In order to push towards the realization of room-temperature operating sensors, a detailed investigation of the synthesis effect on the electrical and optical properties is needed. This work focuses on the low-cost synthesis of ZnO NWLs by means of chemical bath deposition (growth time of 5, 60, and 120 minutes) followed by annealing in inert ambient (temperature of 100, 200, and 300 °C). The as-grown NWLs show a typical intertwined network of vertical sheets whose features (thickness and height) stabilize after 60 minutes growth. During thermal annealing, NWLs are converted into ZnO. The electric transport across the ZnO NWL network radically changes after annealing. A higher resistivity was observed for longer deposition times and for higher annealing temperatures, at which the photoluminescence spectra resemble those obtained for ZnO material. A longer deposition time allows for a better transformation to ZnO during the annealing, thanks to the presence of ZnO seeds just after the growth. These findings can have a significant role in promoting the realization of room-temperature operating sensors based on ZnO NWLs.

High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods

Owing to their intrinsic wide bandgap properties ZnO and GaN materials are widely used for fabricating passive-type visible-blind ultraviolet (UV) photodetectors (PDs). However, most of these PDs have a very low spectral responsivity R, which is not sufficient for detecting very low-level UV signals. We demonstrate an active type UV PD with a ZnO nanorod (NR) structure for the floating gate of AlGaN/GaN high electron mobility transistor (HEMT), where the AlGaN/GaN epitaxial layers are isolated by the nano-scale fins (NFIs) of two different fin widths (70 and 80 nm). In the dark condition, oxygen adsorbed at the surface of the ZnO NRs generates negative gate potential. Upon UV light illumination, the negative charge on the ZnO NRs is reduced due to desorption of oxygen, and this reversible process controls the source-drain carrier transport property of HEMT based PDs. The NFI PDs of a 70 nm fin width show the highest R of a ~3.2 × 10⁷ A/W at 340 nm wavelength among the solid-state UV PDs reported to date. We also compare the performances of NFI PDs with those of conventional mesa isolation (MI, 40 × 100 µm²). NFI devices show ~100 times enhanced R and on-off current ratio than those of MI devices. Due to the volume effect of the small active region, a much faster response speed (rise-up and fall-off times of 0.21 and 1.05 s) is also obtained from the NFI PDs with a 70 nm fin width upon the UV on-off transient.

Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection

We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 10⁵, transconductance around 47 nS, and mobility around 0.175 cm² V^- 1 s^- 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage V_ds, showing maximum photoresponsivity at V_ds = 7 V.

Core-Shell Electrospun Polycrystalline ZnO Nanofibers for Ultra-Sensitive NO2 Gas Sensing

This Research Article discusses the growth of polycrystalline, self-supporting ZnO nanofibers, which can detect nitrogen dioxide (NO₂) gas down to 1 part per billion (ppb), one of the smallest detection limits reported for NO₂ using ZnO. A new and innovative method has been developed for growing polycrystalline ZnO nanofibers. These nanofibers have been created using core-shell electrospinning of inorganic metal precursor zinc neodecanoate, where growth occurs at the core of the nanofibers. This process produces contamination-free, self-supporting, polycrystalline ZnO nanofibers of an average diameter and grain size 50 and 8 nm, respectively, which are ideal for gas sensing applications. This process opens up an exciting opportunity for creating nanofibers from a variety of metal oxides, facilitating many new applications especially in the areas of sensors and wearable technologies.

Nanowire network-based photodetectors with imaging performance for omnidirectional photodetecting through a wire-shaped structure

Wearable photodetectors (PDs) have attracted extensive attention from both scientific and industrial areas due to intrinsic detection abilities as well as promising applications in flexible, intelligent, and portable fields. However, most of the existing PDs have rigid planar or bulky structures which cannot fully meet the demands of these unique occasions. Here, we present a highly flexible, omnidirectional PD based on ZnO nanowire (NW) networks. ZnO NW network-based PDs exhibit the imageable level performance with an on/off ratio of about 104. Importantly, a ZnO NW network can be assembled onto wire-shaped substrates to construct omnidirectional PDs. As a result, the wire-shaped PDs have excellent flexibility, a large light on/off ratio larger than 103, and 360° no blind angle detecting. Besides, they exhibit extraordinary stability against bending and irradiation. These results demonstrate a novel strategy for building wire-shaped optoelectronic devices through a NW network structure, which is highly promising for future smart and wearable applications.

Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires

We report the influence of ammonium hydroxide (NH4OH), as growth additive, on zinc oxide nanomaterial through the optical response obtained by photoluminescence (PL). A low-temperature hydrothermal process is employed for the growth of ZnO nanowires (NWs) on seedless Au surface. A more than two order of magnitude change in ZnO NW density is demonstrated via careful addition of NH4OH in the growth solution. Further, we show by systematic experimental study and PL characterization data that the addition of NH4OH can degrade the optical response of ZnO NWs produced. The increase of growth solution basicity with the addition of NH4OH may slowly degrade the optical response of NWs by slowly etching its surfaces, increasing the point defects in ZnO NWs. The present study demonstrates the importance of growth nutrients to obtain quality controlled density tunable ZnO NWs on seedless conducting substrates.

Resistive switching in individual ZnO nanorods: delineating the ionic current by photo-stimulation

Resistive switching in nanostructured metal oxide semiconductors has been broadly understood to originate from the dynamics of its native point defects. Experimental results of switching observed in individual n-ZnO nanorods grown on a p-type polymer is presented along with an empirical model describing the underlying defect dynamics necessary to observe bi-polar switching. Selective photo excitation of electrons into the defect states delineates the incidence and role of an ionic current in the switching behavior. The understanding further extends to the observance of a negative differential resistance regime that is often coincident in such systems. The analysis not only unifies the underlying physics of the two phenomena but also offers further confidence in the proposed mechanism. We conclude by demonstrating that the effective memresistance of such devices is a strong function of the operating bias and identify parameters that optimize switching performance.

NH₄OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics

Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH₄OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH⁻ ion concentration was effectively controlled by the addition of an optimum amount of NH₄OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes.

High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were grown on silicon wafers by using pulsed plasma beam deposition techniques. Self-powered deep ultraviolet (DUV) photodetectors (PDs) based on BNNSs with Schottky contact structures are designed and fabricated. By connecting the fabricated DUV photodetector to an ammeter, the response strength, response time and recovery time to different DUV wavelengths at different intensities have been characterized using the output short circuit photocurrent without a power supply. Furthermore, effects of temperature and plasma treatment on the induced photocurrent response of detectors have also been investigated. The experimental data clearly indicate that plasma treatment would significantly improve both induced photocurrent and response time. The BNNS-based DUV photodetector is demonstrated to possess excellent performance at a temperature up to 400 °C, including high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability, which is better than almost all reported semiconducting nanomaterial-based self-powered photodetectors.

High-Sensitive Ultraviolet Photodetectors Based on ZnO Nanorods/CdS Heterostructures

The ultraviolet (UV) photodetectors with ZnO nanorods (NRs)/CdS thin film heterostructures on glass substrates have been fabricated and characterized. It can be seen that the UV photoresponsivity of such a device became higher as the ZnO NR length was increased in the investigation. With an incident wavelength of 350 nm and 5 V applied bias, the responsivity of photodetectors based on ZnO NR/CdS heterostructures with the ZnO NR length at 500, 350, and 200 nm and traditional CdS film were at 12.86, 3.83, 0.91, and 0.75 A/W, respectively. The measurement results of the fabricated photodetectors based on ZnO nanorods (NRs)/CdS heterostructures have shown a significant high sensitivity in the range of UV light, which can be useful for the application of UV detection.

Photoelectric response properties under UV/red light irradiation of ZnO nanorod arrays coated with vertically aligned MoS2 nanosheets

MoS₂ with layered structure and distinct physical properties has attracted attention for electronic or optoelectronic devices. The photoelectric response properties of MoS₂/ZnO heterojunctions based devices fabricated by spin-coating MoS₂ nanosheets solutions on ZnO nanorod arrays (NRs) were investigated. The results revealed that MoS₂ nanosheets were vertically aligned on the surface of ZnO NRs and the devices exhibit good photoresponse stability and reproducibility under UV and red light illuminations. The vertically aligned MoS₂ nanosheets facilitate the fast photogenerated carrier separation and transport. The devices with few-layered MoS₂ nanosheets show a high responsivity and detectivity under UV and red light illuminations, which can be attributed to small contact resistance between MoS₂ nanosheets and ZnO NRs. These results provide important insights in the facile fabrication strategy and understanding electronic and optoelectronic devices based on the heterostructures with vertically aligned MoS₂.

Gold-Gilded Zinc Oxide Nanodiamonds: Plasmonic and Morphological Effects

The novel properties, diverse applications and device performance of nanocomposites can be greatly modulated through astute combination of plasmonic and morphological effects. The biosensing sensitivity, semiconducting capability, photocatalytic efficiency and antibacterial efficacy of ZnO nanostructures can be enhanced by a diamond-like morphology of ZnO via incorporation of plasmonic gold owing to their exceptional specific surface area, outstanding photoluminescence and excellent biocompatibility. Toward the realization of this goal, Au-Zno nanodiamonds have been successfully synthesized by a microwave assisted solution phase route without use of any costly solvents, surfactants, substrates, post-synthesis treatment or hazardous ingredients. It shows the ability to control the concentration of Au nanoparticles in ZnO and the evolution of its growth in diamond shape. The synthesized nanocomposites were characterized by high-resolution measurements such as transmission electron microscopy (TEM), diffused reflectance spectroscopy (DRS), energy dispersive X-ray spectroscopy (EDX), X-ray diffractometory (XRD), Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR), and the results discussed in detail.

UV-activated ZnO films on a flexible substrate for room temperature O2 and H2O sensing

We demonstrate that UV-light activation of polycrystalline ZnO films on flexible polyimide (Kapton) substrates can be used to detect and differentiate between environmental changes in oxygen and water vapor. The in-plane resistive and impedance properties of ZnO films, fabricated from bacteria-derived ZnS nanoparticles, exhibit unique resistive and capacitive responses to changes in O2 and H2O. We propose that the distinctive responses to O2 and H2O adsorption on ZnO could be utilized to statistically discriminate between the two analytes. Molecular dynamic simulations (MD) of O2 and H2O adsorption energy on ZnO surfaces were performed using the large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) with a reactive force-field (ReaxFF). These simulations suggest that the adsorption mechanisms differ for O2 and H2O adsorption on ZnO, and are governed by the surface termination and the extent of surface hydroxylation. Electrical response measurements, using DC resistance, AC impedance spectroscopy, and Kelvin Probe Force Microscopy (KPFM), demonstrate differences in response to O2 and H2O, confirming that different adsorption mechanisms are involved. Statistical and machine learning approaches were applied to demonstrate that by integrating the electrical and kinetic responses the flexible ZnO sensor can be used for detection and discrimination between O2 and H2O at low temperature.

High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector

We extend our work on the use of digitally controlled pulsed laser plasma deposition (PLPD) technique to synthesize high quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temperature for applications in high-performance deep UV photodetectors. The obtained sample consists of a large amount of BNNSs partially overlapping one another with random orientations. Each sheet is composed of a few (from 2 to 10) stacked atomic layers exhibiting high transparency due to its highly ordered hBN crystallinity. Deep UV detectors based on the obtained BNNSs were designed, fabricated, and tested. The bias and temperature effects on the photocurrent strength and the signal-to-noise ratio have been carefully characterized and discussed. A significant shift in the cut off wavelength of the BNNSs based photodetectors was observed suggesting a band gap reduction as a result of the BNNSs’ collective structure. The newly designed photodetector presented exceptional properties: a high sensitivity to weak intensities of radiation in both UVC and UVB range while remaining visible-blind, and a high signal-to-noise ratio operation even at temperatures as high as 400 °C. In addition, the BNNSs based photodetector exhibited potential for self-powered operation.

Internal stress induced natural self-chemisorption of ZnO nanostructured films

The energetic particles bombardment can produce large internal stress in the zinc oxide (ZnO) thin film, and it can be used to intentionally modify the surface characteristics of ZnO films. In this article, we observed that the internal stress increased from −1.62 GPa to −0.33 GPa, and the naturally wettability of the textured ZnO nanostructured films changed from hydrophobicity to hydrophilicity. According to analysis of surface chemical states, the naturally controllable wetting behavior can be attributed to hydrocarbon adsorbates on the nanostructured film surface, which is caused by tunable internal stress. On the other hand, the interfacial water molecules near the surface of ZnO nanostructured films have been identified as hydrophobic hydrogen structure by Fourier transform infrared/attenuated total reflection. Moreover, a remarkable near-band-edge emission peak shifting also can be observed in PL spectra due to the transition of internal stress state. Furthermore, our present ZnO nanostructured films also exhibited excellent transparency over 80% with a wise surface wetting switched from hydrophobic to hydrophilic states after exposing in ultraviolet (UV) surroundings. Our work demonstrated that the internal stress of the thin film not only induced natural wettability transition of ZnO nanostructured films, but also in turn affected the surface properties such as surface chemisorption.

Controllable synthesis of functional nanoparticles by microfluidic platforms for biomedical applications - a review

Nanoparticles have drawn significant attention in biomedicine due to their unique optical, thermal, magnetic and electrical properties which are highly related to their size and morphologies. Recently, microfluidic systems have shown promising potential to modulate critical stages in nanosynthesis, such as nucleation, growth and reaction conditions so that the size, size distribution, morphology, and reproducibility of nanoparticles are optimized in a high throughput manner. In this review, we put an emphasis on a decade of developments of microfluidic systems for engineering nanoparticles in various applications including imaging, biosensing, drug delivery, and theranostic applications.

Photoluminescence and electrical properties of bidirectional ZnO nanowires on Zn foils via a thermal oxidation method

ZnO nanowires were directly grown on ductile zinc foils through a two-step process. Zn foils were fabricated from a mixture of Zn and ZnO powders; and ZnO NWs were produced using thermal oxidation at temperatures of 300–600 °C.

Improved sensitivity of UV sensors in hierarchically structured arrays of network-loaded ZnO nanorods via optimization techniques

Hierarchically nanostructured arrays of network-loaded ZnO nanorods for use in enhanced UV photodetectors based on the Taguchi approach.

A Multipurpose CMOS Platform for Nanosensing

This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW-229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

High-performance flexible ZnO nanorod UV photodetectors with a network-structured Cu nanowire electrode

In this work, vertically aligned zinc oxide (ZnO) nanorod (NR)-based flexible ultraviolet (UV) photodetectors were successfully fabricated on a polyimide (PI) substrate with a copper (Cu) nanowire (NW) electrode. To enhance the flexibility and sensing properties, the entangled networks of Cu NWs were applied to UV photodetectors as a flexible electrode. Here, Cu NWs have a high conductivity with a low cost compared to other metals to achieve a Schottky contact with ZnO NRs. Moreover, because of forming a network structure, the surface of the sensing material has a large contact area with oxygen molecules, resulting in a faster response time. The Cu NW electrode exhibited a high optical transmittance of 90%, a considerable sheet resistance of 50 Ω sq^-1, and a work function of 5.12 eV. Consequentially, the fabricated UV photodetector with Cu NW electrodes showed excellent UV sensing properties with a very fast rising time of 0.7 s and a decay time of 1.9 s in the dark and under UV illumination (365 nm, 0.40 mW cm^-2) at a reverse bias of -2.0 V. Furthermore, during the bending test at a radius of curvature of 5 mm, the flexible ZnO NR UV photodetectors with Cu NW electrodes exhibited almost unchanged UV sensing properties even after 5000 cycles.

Development of Solution-Processed ZnO Nanorod Arrays Based Photodetectors and the Improvement of UV Photoresponse via AZO Seed Layers

Designing a rational structure and developing an efficient fabrication technique for bottom-up devices offer a promising opportunity for achieving high-performance devices. In this work, we studied how Al-doped ZnO (AZO) seed layer films influence the morphology and optical and electrical properties for ZnO aligned nanorod arrays (NRs) and then the performance of ZnO NRs based ultraviolet photodetectors (UV PDs) with Au/ZnO NRs Schottky junctions and p-CuSCN/n-ZnO NRs heterojunctions. The PD with AZO thin film with 0.5 at. % Al doping (named as AZO (0.5%)) exhibited more excellent photoresponse properties than that with pristine ZnO and AZO (1%) thin films. This phenomenon can be ascribed to the good light transmission of the AZO layer, increased density of the NRs, and improved crystallinity of ZnO NRs. The PDs based on CuSCN/ZnO NRs heterojunctions showed good rectification characteristics in the dark and self-powered UV photoresponse properties with excellent stability and reproducibility under low-intensity illumination conditions. A large responsivity located at 365 nm of 22.5 mA/W was achieved for the PD with AZO (0.5%) thin film without applied bias. The internal electric field originated from p-CuSCN/n-ZnO NRs heterojunctions can separate photogenerated carriers in ZnO NRs and drift toward the corresponding electrode.

One-Dimensional ZnO/Gold Junction for Simultaneous and Versatile Multisensing Measurements

The sensing capabilities of zinc oxide nano/micro-structures have been widely investigated and these structures are frequently used in the fabrication of cutting-edge sensors. However, to date, little attention has been paid to the multi-sensing abilities of this material. In this work, we present an efficient multisensor based on a single zinc oxide microwire/gold junction. The device is able to detect in real time three different stimuli, UV-VIS light, temperature and pH variations. This is thanks to three properties of zinc oxide its photoconductive response, pyroelectricity and surface functionalization with amino-propyl groups, respectively. The three stimuli can be detected either simultaneously or in a sequence/random order. A specific mathematical tool was also developed, together with a design of experiments (DoE), to predict the performances of the sensor. Our micro-device allows reliable and versatile real-time measurements of UV-VIS light, temperature and pH variations. Therefore, it shows great potential for use in the field of sensing for living cell cultures.

Spatially resolved photoresponse on individual ZnO nanorods: correlating morphology, defects and conductivity

Electrically active native point defects have a significant impact on the optical and electrical properties of ZnO nanostructures. Control of defect distribution and a detailed understanding of their physical properties are central to designing ZnO in novel functional forms and architecture, which ultimately decides device performance. Defect control is primarily achieved by either engineering nanostructure morphology by tailoring growth techniques or doping. Here, we report conducting atomic force microscopy studies of spatially resolved photoresponse properties on ZnO nanorod surfaces. The photoresponse for super-band gap, ultraviolet excitations show a direct correlation between surface morphology and photoactivity localization. Additionally, the system exhibits significant photoresponse with sub-bandgap, green illumination; the signature energy associated with the deep level oxygen vacancy states. While the local current-voltage characteristics provide evidence of multiple transport processes and quantifies the photoresponse, the local time-resolved photoresponse data evidences large variations in response times (90 ms-50 s), across the surface of a nanorod. The spatially varied photoconductance and the range in temporal response display a complex interplay of morphology, defects and connectivity that brings about the true colour of these ZnO nanostructures.

CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process

In this study, UV-visible flexible resistivity-type photo-detectors were demonstrated with CdS-nanowires (NWs) percolation network channel and Ag-NWs percolation network electrode. The devices were fabricated on Mixed Cellulose Esters (MCE) membrane using a lithographic filtration method combined with a facile non-transfer process. The photo-detectors demonstrated strong adhesion, fast response time, fast decay time, and high photo sensitivity. The high performance could be attributed to the high quality single crystalline CdS-NWs, encapsulation of NWs in MCE matrix and excellent interconnection of the NWs. Furthermore, the sensing performance was maintained even the device was bent at an angle of 90°. This research may pave the way for the facile fabrication of flexible photo-detectors with high performances.

Dimensional Tailoring of Hydrothermally Grown Zinc Oxide Nanowire Arrays

Hydrothermally synthesized ZnO nanowire arrays are critical components in a range of nanostructured semiconductor devices. The device performance is governed by relevant nanowire morphological parameters that cannot be fully controlled during bulk hydrothermal synthesis due to its transient nature. Here, we maintain homeostatic zinc concentration, pH, and temperature by employing continuous flow synthesis and demonstrate independent tailoring of nanowire array dimensions including areal density, length, and diameter on device-relevant length scales. By applying diffusion/reaction-limited analysis, we separate the effect of local diffusive transport from the c-plane surface reaction rate and identify direct incorporation as the c-plane growth mechanism. Our analysis defines guidelines for precise and independent control of the nanowire length and diameter by operating in rate-limiting regimes. We validate its utility by using surface adsorbents that limit reaction rate to obtain spatially uniform vertical growth rates across a patterned substrate.

Realization of Interlinked ZnO Tetrapod Networks for UV Sensor and Room-Temperature Gas Sensor

Here, interlinked ZnO tetrapod networks (ITN-ZnO) have been realized by using microwave-assisted thermal oxidation. With this simple and fast process, a nanostructured ZnO morphology having tetrapodlike features with leg-to-leg linking is obtained. The electrical and ethanol-sensing properties related to the morphology of ITN-ZnO compared with those of other ZnO morphologies have also been investigated. It has been found that ITN-ZnO unexpectedly exhibits superior electrical and gas-sensing properties in terms of providing pathways for electron transport to the electrode. A UV sensor and a room-temperature gas sensor with improved performance are achieved. Therefore, ITN-ZnO is an attractive morphology of ZnO that is applicable for many new applications because of its novel properties. The novel properties of ITN-ZnO are beneficial for electronic, photonic, optoelectronic, and sensing applications. ITN-ZnO may provide a means to improve the devices based on ITN-ZnO.

Evaluation of the piezoelectric properties and voltage generation of flexible zinc oxide thin films

Local piezoresponse and piezoelectric output voltage were evaluated on ZnO thin films deposited by radio-frequency magnetron sputtering on hard Si/Ti/Au and flexible Cu-coated polyimide substrates. Three different thicknesses of ZnO films were studied (285 nm, 710 nm, and 1380 nm), focusing on characteristics like crystallinity, grain size, surface roughness, and morphology. Independent of the nature of the metal layer and the substrate, our results show that thicker films presented a higher level of crystallinity and a preferential orientation along the c-axis direction, as well as a lower density of grain boundaries and larger crystal sizes. The improvement of the crystalline structure of the material directly enhances its piezoelectric properties, as confirmed by the local characterizations performed by piezoresponse force microscopy and by the evaluation of the output voltage generation under the application of a periodical mechanical deformation on the whole film. In particular, the highest value of the d33 coefficient obtained (8 pm V(-1)) and the highest generated output voltage (0.746 V) belong to the thickest films on hard and flexible substrates, respectively. These results envision the use of ZnO thin films--particularly on flexible substrates--as conformable, reliable, and efficient active materials for use in nanosensing, actuation, and piezoelectric nanogenerators.

Ultrafast UV response detectors based on multi-channel ZnO nanowire networks

An UV detector based on multi-channel three dimensional ZnO nanowire networks was fabricated via a catalyst-free CVD method.